[go: up one dir, main page]

TW200501345A - Stacked-type semiconductor device - Google Patents

Stacked-type semiconductor device

Info

Publication number
TW200501345A
TW200501345A TW093117314A TW93117314A TW200501345A TW 200501345 A TW200501345 A TW 200501345A TW 093117314 A TW093117314 A TW 093117314A TW 93117314 A TW93117314 A TW 93117314A TW 200501345 A TW200501345 A TW 200501345A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
stacked
wiring substrate
type semiconductor
device element
Prior art date
Application number
TW093117314A
Other languages
English (en)
Other versions
TWI282153B (en
Inventor
Takao Nishimura
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of TW200501345A publication Critical patent/TW200501345A/zh
Application granted granted Critical
Publication of TWI282153B publication Critical patent/TWI282153B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06555Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06558Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having passive surfaces facing each other, i.e. in a back-to-back arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1017All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1047Details of electrical connections between containers
    • H01L2225/1058Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01025Manganese [Mn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/162Disposition
    • H01L2924/1627Disposition stacked type assemblies, e.g. stacked multi-cavities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Combinations Of Printed Boards (AREA)
  • Lead Frames For Integrated Circuits (AREA)
TW093117314A 2003-06-24 2004-06-16 Stacked-type semiconductor device TWI282153B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003180200A JP3858854B2 (ja) 2003-06-24 2003-06-24 積層型半導体装置

Publications (2)

Publication Number Publication Date
TW200501345A true TW200501345A (en) 2005-01-01
TWI282153B TWI282153B (en) 2007-06-01

Family

ID=33562247

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093117314A TWI282153B (en) 2003-06-24 2004-06-16 Stacked-type semiconductor device

Country Status (5)

Country Link
US (1) US7217993B2 (zh)
JP (1) JP3858854B2 (zh)
KR (1) KR100627099B1 (zh)
CN (1) CN1326234C (zh)
TW (1) TWI282153B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI453873B (zh) * 2012-03-27 2014-09-21 Chipsip Technology Co Ltd 堆疊式半導體封裝結構
TWI479637B (zh) * 2007-07-20 2015-04-01 Shinko Electric Ind Co 半導體裝置及其製造方法
US10629455B1 (en) 2018-11-20 2020-04-21 Nanya Technology Corporation Semiconductor package having a blocking dam

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200522293A (en) * 2003-10-01 2005-07-01 Koninkl Philips Electronics Nv Electrical shielding in stacked dies by using conductive die attach adhesive
JP4528062B2 (ja) * 2004-08-25 2010-08-18 富士通株式会社 半導体装置およびその製造方法
JP4185499B2 (ja) * 2005-02-18 2008-11-26 富士通マイクロエレクトロニクス株式会社 半導体装置
US7196427B2 (en) * 2005-04-18 2007-03-27 Freescale Semiconductor, Inc. Structure having an integrated circuit on another integrated circuit with an intervening bent adhesive element
US7098073B1 (en) 2005-04-18 2006-08-29 Freescale Semiconductor, Inc. Method for stacking an integrated circuit on another integrated circuit
US7311236B2 (en) 2005-04-25 2007-12-25 Tsi Manufacturing Llc Electric stapler having two anvil plates and workpiece sensing controller
DE102005041452A1 (de) * 2005-08-31 2007-03-15 Infineon Technologies Ag Dreidimensional integrierte elektronische Baugruppe
US8067831B2 (en) * 2005-09-16 2011-11-29 Stats Chippac Ltd. Integrated circuit package system with planar interconnects
JP2007142124A (ja) * 2005-11-18 2007-06-07 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPWO2007069606A1 (ja) * 2005-12-14 2009-05-21 新光電気工業株式会社 チップ内蔵基板の製造方法
KR100690246B1 (ko) * 2006-01-10 2007-03-12 삼성전자주식회사 플립 칩 시스템 인 패키지 제조 방법
JP4577228B2 (ja) * 2006-02-09 2010-11-10 セイコーエプソン株式会社 半導体装置および半導体装置の製造方法
JP2007287906A (ja) * 2006-04-17 2007-11-01 Elpida Memory Inc 電極と電極の製造方法、及びこの電極を備えた半導体装置
US7633168B2 (en) * 2006-06-28 2009-12-15 Intel Corporation Method, system, and apparatus for a secure bus on a printed circuit board
JP5259059B2 (ja) 2006-07-04 2013-08-07 ルネサスエレクトロニクス株式会社 半導体装置
JP4976767B2 (ja) * 2006-07-19 2012-07-18 キヤノン株式会社 積層形半導体装置
KR100891516B1 (ko) * 2006-08-31 2009-04-06 주식회사 하이닉스반도체 적층 가능한 에프비지에이 타입 반도체 패키지와 이를이용한 적층 패키지
US7514774B2 (en) * 2006-09-15 2009-04-07 Hong Kong Applied Science Technology Research Institute Company Limited Stacked multi-chip package with EMI shielding
US8093505B2 (en) * 2006-10-24 2012-01-10 Panasonic Corporation Layered electronic circuit device
US20080128890A1 (en) * 2006-11-30 2008-06-05 Advanced Semiconductor Engineering, Inc. Chip package and fabricating process thereof
TWI376774B (en) * 2007-06-08 2012-11-11 Cyntec Co Ltd Three dimensional package structure
US7952168B2 (en) * 2008-03-04 2011-05-31 Powertech Technology Inc. Substrate strip for semiconductor packages
US8779570B2 (en) * 2008-03-19 2014-07-15 Stats Chippac Ltd. Stackable integrated circuit package system
US9059074B2 (en) * 2008-03-26 2015-06-16 Stats Chippac Ltd. Integrated circuit package system with planar interconnect
US7871861B2 (en) * 2008-06-25 2011-01-18 Stats Chippac Ltd. Stacked integrated circuit package system with intra-stack encapsulation
US8043894B2 (en) * 2008-08-26 2011-10-25 Stats Chippac Ltd. Integrated circuit package system with redistribution layer
KR20100025750A (ko) * 2008-08-28 2010-03-10 앰코 테크놀로지 코리아 주식회사 반도체 패키지
US8129824B1 (en) * 2008-12-03 2012-03-06 Amkor Technology, Inc. Shielding for a semiconductor package
US8102032B1 (en) * 2008-12-09 2012-01-24 Amkor Technology, Inc. System and method for compartmental shielding of stacked packages
KR101004684B1 (ko) * 2008-12-26 2011-01-04 주식회사 하이닉스반도체 적층형 반도체 패키지
KR20110083969A (ko) * 2010-01-15 2011-07-21 삼성전자주식회사 반도체 패키지 및 그 제조 방법
US8314486B2 (en) * 2010-02-23 2012-11-20 Stats Chippac Ltd. Integrated circuit packaging system with shield and method of manufacture thereof
US9355939B2 (en) * 2010-03-02 2016-05-31 Stats Chippac Ltd. Integrated circuit package stacking system with shielding and method of manufacture thereof
US8299595B2 (en) * 2010-03-18 2012-10-30 Stats Chippac Ltd. Integrated circuit package system with package stacking and method of manufacture thereof
US8569869B2 (en) * 2010-03-23 2013-10-29 Stats Chippac Ltd. Integrated circuit packaging system with encapsulation and method of manufacture thereof
KR101652831B1 (ko) * 2010-06-11 2016-08-31 삼성전자주식회사 열적 특성을 개선하는 패키지 온 패키지
TWI448226B (zh) * 2010-09-21 2014-08-01 Cyntec Co Ltd 電源轉換模組
US8861221B2 (en) 2010-09-24 2014-10-14 Stats Chippac Ltd. Integrated circuit packaging system with a shield and method of manufacture thereof
US9865310B2 (en) * 2011-02-24 2018-01-09 Interconnect Systems, Inc. High density memory modules
JP5693710B2 (ja) * 2011-04-14 2015-04-01 三菱電機株式会社 高周波パッケージ
KR20130005465A (ko) * 2011-07-06 2013-01-16 삼성전자주식회사 반도체 스택 패키지 장치
US8492888B2 (en) 2011-09-02 2013-07-23 Stats Chippac Ltd. Integrated circuit packaging system with stiffener and method of manufacture thereof
US10163744B2 (en) 2011-09-07 2018-12-25 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming a low profile dual-purpose shield and heat-dissipation structure
JP5959097B2 (ja) * 2012-07-03 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置
CN103681365B (zh) * 2012-08-31 2016-08-10 宏启胜精密电子(秦皇岛)有限公司 层叠封装结构及其制作方法
US10160638B2 (en) * 2013-01-04 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a semiconductor structure
US8994191B2 (en) * 2013-01-21 2015-03-31 Advanced Micro Devices (Shanghai) Co. Ltd. Die-die stacking structure and method for making the same
US9293404B2 (en) * 2013-01-23 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Pre-applying supporting materials between bonded package components
JP6171402B2 (ja) * 2013-03-01 2017-08-02 セイコーエプソン株式会社 モジュール、電子機器、および移動体
JP6438225B2 (ja) * 2014-07-24 2018-12-12 株式会社ジェイデバイス 半導体パッケージ
US20200075501A1 (en) * 2016-03-31 2020-03-05 Intel Corporation Electromagnetic interference shielding for semiconductor packages using bond wires
TWI601219B (zh) * 2016-08-31 2017-10-01 矽品精密工業股份有限公司 電子封裝件及其製法
US10804115B2 (en) 2017-08-03 2020-10-13 General Electric Company Electronics package with integrated interconnect structure and method of manufacturing thereof
US10541209B2 (en) * 2017-08-03 2020-01-21 General Electric Company Electronics package including integrated electromagnetic interference shield and method of manufacturing thereof
CN109698170B (zh) * 2017-10-24 2021-03-12 长鑫存储技术有限公司 一种半导体封装结构及其制造方法
US10825774B2 (en) * 2018-08-01 2020-11-03 Samsung Electronics Co., Ltd. Semiconductor package

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5340771A (en) * 1993-03-18 1994-08-23 Lsi Logic Corporation Techniques for providing high I/O count connections to semiconductor dies
JPH06291216A (ja) * 1993-04-05 1994-10-18 Sony Corp 基板及びセラミックパッケージ
JP2944449B2 (ja) * 1995-02-24 1999-09-06 日本電気株式会社 半導体パッケージとその製造方法
US5783870A (en) * 1995-03-16 1998-07-21 National Semiconductor Corporation Method for connecting packages of a stacked ball grid array structure
JPH10125830A (ja) * 1996-10-24 1998-05-15 Hitachi Ltd 高周波モジュールおよびその製造方法
US5994166A (en) 1997-03-10 1999-11-30 Micron Technology, Inc. Method of constructing stacked packages
US6274929B1 (en) * 1998-09-01 2001-08-14 Texas Instruments Incorporated Stacked double sided integrated circuit package
US6137693A (en) * 1998-07-31 2000-10-24 Agilent Technologies Inc. High-frequency electronic package with arbitrarily-shaped interconnects and integral shielding
JP2000091751A (ja) * 1998-09-10 2000-03-31 Toyo Commun Equip Co Ltd 積層基板を用いた高周波回路
JP3538045B2 (ja) * 1998-12-09 2004-06-14 三菱電機株式会社 Rf回路モジュール
US6310386B1 (en) * 1998-12-17 2001-10-30 Philips Electronics North America Corp. High performance chip/package inductor integration
US6122171A (en) * 1999-07-30 2000-09-19 Micron Technology, Inc. Heat sink chip package and method of making
JP2001111232A (ja) * 1999-10-06 2001-04-20 Sony Corp 電子部品実装多層基板及びその製造方法
JP3798597B2 (ja) 1999-11-30 2006-07-19 富士通株式会社 半導体装置
US7247932B1 (en) * 2000-05-19 2007-07-24 Megica Corporation Chip package with capacitor
JP4497683B2 (ja) * 2000-09-11 2010-07-07 ローム株式会社 集積回路装置
US6472741B1 (en) * 2001-07-14 2002-10-29 Siliconware Precision Industries Co., Ltd. Thermally-enhanced stacked-die ball grid array semiconductor package and method of fabricating the same
KR100426500B1 (ko) 2001-07-03 2004-04-13 앰코 테크놀로지 코리아 주식회사 반도체패키지
US20030006494A1 (en) 2001-07-03 2003-01-09 Lee Sang Ho Thin profile stackable semiconductor package and method for manufacturing
SG104279A1 (en) * 2001-11-02 2004-06-21 Inst Of Microelectronics Enhanced chip scale package for flip chips
JP2003273321A (ja) * 2002-03-13 2003-09-26 Toshiba Corp 半導体モジュール
JP4800625B2 (ja) * 2002-09-17 2011-10-26 スタッツ・チップパック・インコーポレイテッド 積み重ねられたパッケージ間のワイヤボンド相互接続を有する半導体マルチパッケージモジュール及びその形成方法
US6933598B2 (en) * 2002-10-08 2005-08-23 Chippac, Inc. Semiconductor stacked multi-package module having inverted second package and electrically shielded first package

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI479637B (zh) * 2007-07-20 2015-04-01 Shinko Electric Ind Co 半導體裝置及其製造方法
TWI453873B (zh) * 2012-03-27 2014-09-21 Chipsip Technology Co Ltd 堆疊式半導體封裝結構
US10629455B1 (en) 2018-11-20 2020-04-21 Nanya Technology Corporation Semiconductor package having a blocking dam
TWI701788B (zh) * 2018-11-20 2020-08-11 南亞科技股份有限公司 半導體封裝及其製造方法

Also Published As

Publication number Publication date
JP2005019568A (ja) 2005-01-20
CN1326234C (zh) 2007-07-11
TWI282153B (en) 2007-06-01
KR20050001368A (ko) 2005-01-06
US7217993B2 (en) 2007-05-15
JP3858854B2 (ja) 2006-12-20
US20050006745A1 (en) 2005-01-13
CN1574309A (zh) 2005-02-02
KR100627099B1 (ko) 2006-09-25

Similar Documents

Publication Publication Date Title
TW200501345A (en) Stacked-type semiconductor device
TWI268583B (en) High-frequency device
TW428258B (en) Semiconductor device with connection terminals in the form of a grid array
TW200629523A (en) Stacked die module
TW200703429A (en) Stacked semiconductor chip package
TW200501182A (en) A capacitor structure
HK1086386A1 (en) Stackable semiconductor device and method of manufacturing the same
TW200419764A (en) Multi-chips stacked package
WO2007149362A3 (en) Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements
EP1028520A4 (en) Semiconductor device
WO2008051596A3 (en) Solid state light sheet and encapsulated bare die semiconductor circuits
SG99937A1 (en) An electronic device and a method of manufacturing the same
TW200625709A (en) Vertical interconnect for organic electronic devices
TW200610116A (en) Micro-electronic package structure and method for fabricating the same
ATE443932T1 (de) Elektrischer verbinder mit passiven schaltungselementen
WO2006078985A3 (en) Optoelectronic architecture having compound conducting substrate
TW200701854A (en) Communication circuit module
SG148851A1 (en) Stacked semiconductor packages
SG120069A1 (en) Semiconductor device assemblies and packages including multiple semiconductor devices and methods
WO2002082541A1 (fr) Dispositif a semi-conducteur a puissance
TW200419762A (en) Bumpless chip package
TW200703528A (en) Semiconductor device
WO2009001170A3 (en) Filter having impedance matching circuits
WO2009020240A3 (en) Semiconductor device and method for manufacturing the same
TWI257114B (en) Integrated capacitor

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees