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SG107621A1 - Thin film piezoelectric element and its manufacturing method - Google Patents

Thin film piezoelectric element and its manufacturing method

Info

Publication number
SG107621A1
SG107621A1 SG200206653A SG200206653A SG107621A1 SG 107621 A1 SG107621 A1 SG 107621A1 SG 200206653 A SG200206653 A SG 200206653A SG 200206653 A SG200206653 A SG 200206653A SG 107621 A1 SG107621 A1 SG 107621A1
Authority
SG
Singapore
Prior art keywords
manufacturing
thin film
piezoelectric element
film piezoelectric
thin
Prior art date
Application number
SG200206653A
Other languages
English (en)
Inventor
Uchiyama Hirokazu
Ogawa Yuko
Kita Hiroyuki
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of SG107621A1 publication Critical patent/SG107621A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/206—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using only longitudinal or thickness displacement, e.g. d33 or d31 type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S29/00—Metal working
    • Y10S29/001—Method or apparatus involving adhesive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S29/00—Metal working
    • Y10S29/016—Method or apparatus with etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49128—Assembling formed circuit to base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4981—Utilizing transitory attached element or associated separate material

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Supporting Of Heads In Record-Carrier Devices (AREA)
  • Moving Of The Head To Find And Align With The Track (AREA)
  • Adjustment Of The Magnetic Head Position Track Following On Tapes (AREA)
SG200206653A 2001-11-05 2002-11-05 Thin film piezoelectric element and its manufacturing method SG107621A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001339109A JP3846271B2 (ja) 2001-11-05 2001-11-05 薄膜圧電体素子およびその製造方法

Publications (1)

Publication Number Publication Date
SG107621A1 true SG107621A1 (en) 2004-12-29

Family

ID=19153508

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200206653A SG107621A1 (en) 2001-11-05 2002-11-05 Thin film piezoelectric element and its manufacturing method

Country Status (5)

Country Link
US (2) US6817073B2 (ja)
JP (1) JP3846271B2 (ja)
CN (1) CN1282189C (ja)
HK (1) HK1053535A1 (ja)
SG (1) SG107621A1 (ja)

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CN1245768C (zh) * 2001-09-07 2006-03-15 松下电器产业株式会社 薄膜压电体元件及其制造方法并致动器
US7089635B2 (en) * 2003-02-25 2006-08-15 Palo Alto Research Center, Incorporated Methods to make piezoelectric ceramic thick film arrays and elements
US7064401B2 (en) * 2003-03-06 2006-06-20 Matsushita Electric Industrial Co., Ltd. Thin film piezoelectric element, method of manufacturing the same, and actuator
US7017245B2 (en) * 2003-11-11 2006-03-28 General Electric Company Method for making multi-layer ceramic acoustic transducer
JP4496091B2 (ja) * 2004-02-12 2010-07-07 株式会社東芝 薄膜圧電アクチュエータ
JP4113143B2 (ja) * 2004-03-15 2008-07-09 Ｔｄｋ株式会社 薄膜圧電体素子、サスペンション、及びハードディスク装置
JP4585223B2 (ja) * 2004-04-22 2010-11-24 東芝ストレージデバイス株式会社 圧電アクチュエータ及び圧電アクチュエータを用いたヘッドサスペンション装置
JP4670495B2 (ja) * 2004-09-06 2011-04-13 Ｔｄｋ株式会社 電子デバイス及びその製造方法
JP4770251B2 (ja) * 2005-04-25 2011-09-14 パナソニック株式会社 成分分離デバイスおよびこれを用いた成分の分離方法
US7528529B2 (en) * 2005-10-17 2009-05-05 Semiconductor Energy Laboratory Co., Ltd. Micro electro mechanical system, semiconductor device, and manufacturing method thereof
WO2007125724A1 (ja) * 2006-04-28 2007-11-08 Murata Manufacturing Co., Ltd. 電子部品及びその製造方法
DE102006025960B4 (de) * 2006-06-02 2011-04-07 Infineon Technologies Ag Verfahren zur Herstellung einer integrierten Halbleitereinrichtung
US20080158725A1 (en) * 2006-12-29 2008-07-03 Toshiki Hirano Vibration damping utilizing a patterned visco-elastic polymer
JP4844750B2 (ja) * 2007-03-20 2011-12-28 セイコーエプソン株式会社 圧電素子、インクジェット式記録ヘッド、およびインクジェットプリンター
JP4424520B2 (ja) * 2007-08-27 2010-03-03 セイコーエプソン株式会社 圧電素子およびその製造方法、アクチュエータ、並びに、液体噴射ヘッド
US20090061632A1 (en) * 2007-08-28 2009-03-05 Texas Instruments Incorporated Methods for cleaning etch residue deposited by wet etch processes for high-k dielectrics
JP5032949B2 (ja) * 2007-11-14 2012-09-26 エイチジーエスティーネザーランドビーブイ マイクロアクチュエータ、ヘッド・ジンバル・アセンブリ及びディスク・ドライブ装置
WO2009099438A1 (en) * 2008-02-05 2009-08-13 Morgan Advanced Ceramics, Inc. Encapsulation coating to reduce particle shedding
US8085508B2 (en) 2008-03-28 2011-12-27 Hitachi Global Storage Technologies Netherlands B.V. System, method and apparatus for flexure-integrated microactuator
JP4567775B2 (ja) * 2008-08-26 2010-10-20 富士通メディアデバイス株式会社 弾性表面波デバイスおよびその製造方法
JP4665025B2 (ja) * 2008-12-16 2011-04-06 Ｔｄｋ株式会社 圧電素子の製造方法
JP5549913B2 (ja) * 2009-09-01 2014-07-16 株式会社リコー 電気機械変換素子の製造方法
KR101740692B1 (ko) * 2009-09-30 2017-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 축전 장치용 전극의 제작 방법 및 축전 장치의 제작 방법
CN106099090B (zh) * 2010-03-26 2019-02-15 株式会社半导体能源研究所 二次电池及二次电池的电极的形成方法
KR101320138B1 (ko) * 2011-11-30 2013-10-23 삼성전기주식회사 지문 인식 센서 및 그 제조 방법
JP5808262B2 (ja) * 2012-01-23 2015-11-10 株式会社サイオクス 圧電体素子及び圧電体デバイス
US11205449B2 (en) 2013-03-18 2021-12-21 Magnecomp Corporation Multi-layer PZT microacuator with active PZT constraining layers for a DSA suspension
US9741376B1 (en) * 2013-03-18 2017-08-22 Magnecomp Corporation Multi-layer PZT microactuator having a poled but inactive PZT constraining layer
US10607642B2 (en) 2013-03-18 2020-03-31 Magnecomp Corporation Multi-layer PZT microactuator with active PZT constraining layers for a DSA suspension
US10128431B1 (en) 2015-06-20 2018-11-13 Magnecomp Corporation Method of manufacturing a multi-layer PZT microactuator using wafer-level processing
JP6601174B2 (ja) * 2015-11-13 2019-11-06 セイコーエプソン株式会社 圧電アクチュエーター、積層アクチュエーター、圧電モーター、ロボット、ハンド及び送液ポンプ
CN113851577B (zh) * 2021-09-23 2024-02-20 业成光电（深圳）有限公司 压电传感器的制作方法

Citations (2)

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US5196756A (en) * 1988-07-15 1993-03-23 Hitachi Ltd. Stack-type piezoelectric element, process for producing the same, and stack-type piezoelectric device
US6719412B2 (en) * 2001-06-14 2004-04-13 Brother Kogyo Kabushiki Kaisha Piezoelectric actuator and ink ejector using the piezoelectric actuator

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JPS60189307A (ja) * 1984-03-09 1985-09-26 Toshiba Corp 圧電薄膜共振器およびその製造方法
JPH01277011A (ja) * 1988-04-28 1989-11-07 Toko Inc 表面弾性波共振器の製造方法
JP2986706B2 (ja) 1995-03-03 1999-12-06 日立金属株式会社 圧電素子及びそれを用いた圧電アクチュエータ
US5692279A (en) * 1995-08-17 1997-12-02 Motorola Method of making a monolithic thin film resonator lattice filter
EP1744365B1 (en) * 1996-08-27 2009-04-15 Seiko Epson Corporation Exfoliating method and transferring method of thin film device
US5923115A (en) * 1996-11-22 1999-07-13 Acuson Corporation Low mass in the acoustic path flexible circuit interconnect and method of manufacture thereof
JPH1126733A (ja) 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
US6351057B1 (en) * 1999-01-25 2002-02-26 Samsung Electro-Mechanics Co., Ltd Microactuator and method for fabricating the same
DE19913271A1 (de) * 1999-03-24 2000-09-28 Bosch Gmbh Robert Piezoelektrischer Aktor
DE10007577C1 (de) * 2000-02-18 2001-09-13 Infineon Technologies Ag Piezoresonator
JP4387623B2 (ja) * 2000-12-04 2009-12-16 キヤノン株式会社 圧電素子の製造方法
US6476536B1 (en) * 2001-04-27 2002-11-05 Nokia Corporation Method of tuning BAW resonators

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Publication number Priority date Publication date Assignee Title
US5196756A (en) * 1988-07-15 1993-03-23 Hitachi Ltd. Stack-type piezoelectric element, process for producing the same, and stack-type piezoelectric device
US6719412B2 (en) * 2001-06-14 2004-04-13 Brother Kogyo Kabushiki Kaisha Piezoelectric actuator and ink ejector using the piezoelectric actuator

Also Published As

Publication number Publication date
JP3846271B2 (ja) 2006-11-15
JP2003142749A (ja) 2003-05-16
US6903497B2 (en) 2005-06-07
US6817073B2 (en) 2004-11-16
US20050029907A1 (en) 2005-02-10
US20030155845A1 (en) 2003-08-21
HK1053535A1 (en) 2003-10-24
CN1282189C (zh) 2006-10-25
CN1417797A (zh) 2003-05-14

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