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SE9300211D0 - Dielektriskt isolerad halvledaranordning och foerfarande foer dess framstaellning - Google Patents

Dielektriskt isolerad halvledaranordning och foerfarande foer dess framstaellning

Info

Publication number
SE9300211D0
SE9300211D0 SE9300211A SE9300211A SE9300211D0 SE 9300211 D0 SE9300211 D0 SE 9300211D0 SE 9300211 A SE9300211 A SE 9300211A SE 9300211 A SE9300211 A SE 9300211A SE 9300211 D0 SE9300211 D0 SE 9300211D0
Authority
SE
Sweden
Prior art keywords
component region
jfet
region
doped
field effect
Prior art date
Application number
SE9300211A
Other languages
English (en)
Other versions
SE9300211L (sv
SE500815C2 (sv
Inventor
Andrej Litwin
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Publication of SE9300211D0 publication Critical patent/SE9300211D0/sv
Priority to SE9300211A priority Critical patent/SE500815C2/sv
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SG1996000764A priority patent/SG54996A1/en
Priority to DE69414169T priority patent/DE69414169T2/de
Priority to EP94850005A priority patent/EP0623949B1/en
Priority to SG1996000621A priority patent/SG49599A1/en
Priority to MYPI94000096A priority patent/MY110382A/en
Priority to US08/185,146 priority patent/US5432377A/en
Priority to JP00589594A priority patent/JP3686097B2/ja
Priority to CN94100576A priority patent/CN1036740C/zh
Priority to KR1019940001283A priority patent/KR100307304B1/ko
Publication of SE9300211L publication Critical patent/SE9300211L/sv
Publication of SE500815C2 publication Critical patent/SE500815C2/sv
Priority to US08/444,512 priority patent/US5741723A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/657—Lateral DMOS [LDMOS] FETs having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H10D30/0512—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H10D30/615—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel comprising a MOS gate electrode and at least one non-MOS gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/832—Thin-film junction FETs [JFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill

Landscapes

  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
SE9300211A 1993-01-25 1993-01-25 Dielektriskt isolerad halvledaranordning och förfarande för dess framställning SE500815C2 (sv)

Priority Applications (11)

Application Number Priority Date Filing Date Title
SE9300211A SE500815C2 (sv) 1993-01-25 1993-01-25 Dielektriskt isolerad halvledaranordning och förfarande för dess framställning
SG1996000764A SG54996A1 (en) 1993-01-25 1994-01-12 A semiconductor device in a thin active layer with high break-down voltage
DE69414169T DE69414169T2 (de) 1993-01-25 1994-01-12 Dielektrisch isolierte Halbleiteranordnung und Verfahren zu deren Herstellung
EP94850005A EP0623949B1 (en) 1993-01-25 1994-01-12 A dielectrically isolated semiconductor device and a method for its manufacture
SG1996000621A SG49599A1 (en) 1993-01-25 1994-01-12 A dielectrically isolated semiconductor device and a method for its manufacture
MYPI94000096A MY110382A (en) 1993-01-25 1994-01-14 A dielectrically isolated semiconductor device and a method for its manufacture
JP00589594A JP3686097B2 (ja) 1993-01-25 1994-01-24 誘電的に絶縁された半導体素子並びにその製造方法
US08/185,146 US5432377A (en) 1993-01-25 1994-01-24 Dielectrically isolated semiconductor device and a method for its manufacture
CN94100576A CN1036740C (zh) 1993-01-25 1994-01-25 一种介质隔离半导体器件及其制造方法
KR1019940001283A KR100307304B1 (ko) 1993-01-25 1994-01-25 유전적으로절연된반도체소자및그의제조방법
US08/444,512 US5741723A (en) 1993-01-25 1995-05-19 Dielectrically isolated semiconductor device and a method for its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9300211A SE500815C2 (sv) 1993-01-25 1993-01-25 Dielektriskt isolerad halvledaranordning och förfarande för dess framställning

Publications (3)

Publication Number Publication Date
SE9300211D0 true SE9300211D0 (sv) 1993-01-25
SE9300211L SE9300211L (sv) 1994-07-26
SE500815C2 SE500815C2 (sv) 1994-09-12

Family

ID=20388647

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9300211A SE500815C2 (sv) 1993-01-25 1993-01-25 Dielektriskt isolerad halvledaranordning och förfarande för dess framställning

Country Status (9)

Country Link
US (2) US5432377A (sv)
EP (1) EP0623949B1 (sv)
JP (1) JP3686097B2 (sv)
KR (1) KR100307304B1 (sv)
CN (1) CN1036740C (sv)
DE (1) DE69414169T2 (sv)
MY (1) MY110382A (sv)
SE (1) SE500815C2 (sv)
SG (2) SG54996A1 (sv)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980702335A (ko) * 1995-12-21 1998-07-15 요트. 게. 아. 롤페즈 리서프 반도체장치를 제조하는 방법과 이러한 방법에 의해서 제조된 반도체 장치
AU2187397A (en) 1996-03-22 1997-10-10 Telefonaktiebolaget Lm Ericsson (Publ) Semiconductor device shielded by an array of electrically conducting pins and a method to manufacture such a device
GB2344303B (en) * 1997-09-01 2002-12-11 United Microelectronics Corp Chemical-mechanical polishing machine and retainer ring thereof
US5973341A (en) * 1998-12-14 1999-10-26 Philips Electronics North America Corporation Lateral thin-film silicon-on-insulator (SOI) JFET device
FR2818013B1 (fr) * 2000-12-13 2003-10-17 St Microelectronics Sa Transistor a effet de champ a jonction destine a former un limiteur de courant
JP3925253B2 (ja) * 2002-03-15 2007-06-06 住友電気工業株式会社 横型接合型電界効果トランジスタおよびその製造方法
US7189608B2 (en) * 2003-12-22 2007-03-13 Semiconductor Components Industries, L.L.C. Semiconductor device having reduced gate charge and reduced on resistance and method
US7288800B2 (en) * 2005-01-07 2007-10-30 Texas Instruments Incorporated Versatile system for cross-lateral junction field effect transistor
JP4857610B2 (ja) * 2005-06-01 2012-01-18 株式会社日立製作所 高圧アナログ・スイッチｉｃおよびそれを使った超音波診断装置
TW200903802A (en) 2007-05-03 2009-01-16 Dsm Solutions Inc Semiconductor device having a fin structure and fabrication method thereof
CN103390646B (zh) * 2012-05-09 2016-06-08 旺宏电子股份有限公司 半导体元件及其制造方法
CN105609544B (zh) 2015-12-22 2019-05-03 杭州士兰微电子股份有限公司 绝缘隔离半导体器件及其制造方法
US11322545B2 (en) 2018-04-27 2022-05-03 Hewlett Packard Enterprise Development Lp Vertical JFET device for memristor array interface

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2728532A1 (de) * 1977-06-24 1979-01-11 Siemens Ag Sperrschicht-feldeffekttransistor
US4587545A (en) * 1978-12-20 1986-05-06 At&T Bell Laboratories High voltage dielectrically isolated remote gate solid-state switch
US4608590A (en) * 1978-12-20 1986-08-26 At&T Bell Laboratories High voltage dielectrically isolated solid-state switch
JPS6016753B2 (ja) * 1979-01-19 1985-04-27 株式会社日立製作所 半導体スイツチング素子およびその制御方法
US4587656A (en) * 1979-12-28 1986-05-06 At&T Bell Laboratories High voltage solid-state switch
NL186665C (nl) * 1980-03-10 1992-01-16 Philips Nv Halfgeleiderinrichting.
NL187415C (nl) * 1980-09-08 1991-09-16 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
NL8200464A (nl) * 1982-02-08 1983-09-01 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
US4729008A (en) * 1982-12-08 1988-03-01 Harris Corporation High voltage IC bipolar transistors operable to BVCBO and method of fabrication
US4691220A (en) * 1983-10-07 1987-09-01 American Telephone And Telegraph Company, At&T Bell Laboratories Radial high voltage bidirectional switch structure with concavo-concave shaped semiconductor regions
US4639761A (en) * 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
US4605948A (en) * 1984-08-02 1986-08-12 Rca Corporation Semiconductor structure for electric field distribution
US5001075A (en) * 1989-04-03 1991-03-19 Motorola Fabrication of dielectrically isolated semiconductor device
JP2825322B2 (ja) * 1989-09-13 1998-11-18 株式会社東芝 誘電体分離構造を有する半導体基板の製造方法
JP2739018B2 (ja) * 1992-10-21 1998-04-08 三菱電機株式会社 誘電体分離半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR940019000A (ko) 1994-08-19
DE69414169T2 (de) 1999-03-18
DE69414169D1 (de) 1998-12-03
KR100307304B1 (ko) 2002-06-20
EP0623949A1 (en) 1994-11-09
US5741723A (en) 1998-04-21
JPH06260506A (ja) 1994-09-16
SG54996A1 (en) 1998-12-21
JP3686097B2 (ja) 2005-08-24
US5432377A (en) 1995-07-11
CN1092557A (zh) 1994-09-21
MY110382A (en) 1998-04-30
SE9300211L (sv) 1994-07-26
CN1036740C (zh) 1997-12-17
SE500815C2 (sv) 1994-09-12
SG49599A1 (en) 1998-06-15
EP0623949B1 (en) 1998-10-28

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