[go: up one dir, main page]

SE520968C2 - Högresistiv monokristallin kiselkarbid och metod för dess framställning - Google Patents

Högresistiv monokristallin kiselkarbid och metod för dess framställning

Info

Publication number
SE520968C2
SE520968C2 SE0103602A SE0103602A SE520968C2 SE 520968 C2 SE520968 C2 SE 520968C2 SE 0103602 A SE0103602 A SE 0103602A SE 0103602 A SE0103602 A SE 0103602A SE 520968 C2 SE520968 C2 SE 520968C2
Authority
SE
Sweden
Prior art keywords
deep
silicon carbide
crystal
silicon
concentration
Prior art date
Application number
SE0103602A
Other languages
English (en)
Swedish (sv)
Other versions
SE0103602D0 (sv
SE0103602L (sv
Inventor
Alexandre Ellison
Nguyen Tien Son
Bjoern Magnusson
Erik Janzen
Original Assignee
Okmetic Oyj
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Okmetic Oyj filed Critical Okmetic Oyj
Priority to SE0103602A priority Critical patent/SE520968C2/sv
Publication of SE0103602D0 publication Critical patent/SE0103602D0/xx
Priority to US10/281,173 priority patent/US7018597B2/en
Priority to JP2003541026A priority patent/JP4434736B2/ja
Priority to AU2002347705A priority patent/AU2002347705A1/en
Priority to EP02783900.0A priority patent/EP1440461B1/de
Priority to PCT/SE2002/001961 priority patent/WO2003038868A2/en
Priority to CNB028215974A priority patent/CN1302518C/zh
Publication of SE0103602L publication Critical patent/SE0103602L/xx
Publication of SE520968C2 publication Critical patent/SE520968C2/sv
Priority to JP2008256303A priority patent/JP4954959B2/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE0103602A 2001-10-29 2001-10-29 Högresistiv monokristallin kiselkarbid och metod för dess framställning SE520968C2 (sv)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SE0103602A SE520968C2 (sv) 2001-10-29 2001-10-29 Högresistiv monokristallin kiselkarbid och metod för dess framställning
US10/281,173 US7018597B2 (en) 2001-10-29 2002-10-28 High resistivity silicon carbide single crystal
JP2003541026A JP4434736B2 (ja) 2001-10-29 2002-10-28 高い抵抗率の炭化ケイ素単結晶
AU2002347705A AU2002347705A1 (en) 2001-10-29 2002-10-28 High resistivity silicon carbide single crystal and method of producing it
EP02783900.0A EP1440461B1 (de) 2001-10-29 2002-10-28 Siliziumkarbideinkristall mit hohem spezifischen widerstand und verfahren zu seiner herstellung
PCT/SE2002/001961 WO2003038868A2 (en) 2001-10-29 2002-10-28 High resistivity silicon carbide single crystal and method of producing it
CNB028215974A CN1302518C (zh) 2001-10-29 2002-10-28 高电阻率碳化硅单晶体及制造方法
JP2008256303A JP4954959B2 (ja) 2001-10-29 2008-10-01 高い抵抗率の炭化ケイ素単結晶

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0103602A SE520968C2 (sv) 2001-10-29 2001-10-29 Högresistiv monokristallin kiselkarbid och metod för dess framställning

Publications (3)

Publication Number Publication Date
SE0103602D0 SE0103602D0 (sv) 2001-10-29
SE0103602L SE0103602L (sv) 2003-04-30
SE520968C2 true SE520968C2 (sv) 2003-09-16

Family

ID=20285810

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0103602A SE520968C2 (sv) 2001-10-29 2001-10-29 Högresistiv monokristallin kiselkarbid och metod för dess framställning

Country Status (7)

Country Link
US (1) US7018597B2 (de)
EP (1) EP1440461B1 (de)
JP (2) JP4434736B2 (de)
CN (1) CN1302518C (de)
AU (1) AU2002347705A1 (de)
SE (1) SE520968C2 (de)
WO (1) WO2003038868A2 (de)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
SE525574C2 (sv) * 2002-08-30 2005-03-15 Okmetic Oyj Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter
JP5146975B2 (ja) * 2004-06-17 2013-02-20 新日鐵住金株式会社 炭化珪素単結晶および単結晶ウェハ
WO2006017074A2 (en) * 2004-07-07 2006-02-16 Ii-Vi Incorporated Low-doped semi-insulating sic crystals and method
JP5068423B2 (ja) * 2004-10-13 2012-11-07 新日本製鐵株式会社 炭化珪素単結晶インゴット、炭化珪素単結晶ウェハ及びその製造方法
US7811943B2 (en) * 2004-12-22 2010-10-12 Cree, Inc. Process for producing silicon carbide crystals having increased minority carrier lifetimes
US7276117B2 (en) * 2005-02-09 2007-10-02 Cree Dulles, Inc. Method of forming semi-insulating silicon carbide single crystal
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7391057B2 (en) * 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7414268B2 (en) 2005-05-18 2008-08-19 Cree, Inc. High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US8980445B2 (en) * 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
US20090053125A1 (en) * 2007-08-20 2009-02-26 Il-Vi Incorporated Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Crystals
JP5521317B2 (ja) 2008-11-20 2014-06-11 トヨタ自動車株式会社 ｐ型ＳｉＣ半導体
EP2471981A4 (de) * 2009-08-27 2013-04-17 Nippon Steel & Sumitomo Metal Corp Silicium-einzelkristallwafer und herstellungsverfahren dafür
JP5565070B2 (ja) * 2010-04-26 2014-08-06 住友電気工業株式会社 炭化珪素結晶および炭化珪素結晶の製造方法
JP5839315B2 (ja) * 2010-07-30 2016-01-06 株式会社デンソー 炭化珪素単結晶およびその製造方法
WO2012029952A1 (ja) * 2010-09-02 2012-03-08 株式会社ブリヂストン 炭化ケイ素単結晶の製造方法、炭化ケイ素単結晶、及び炭化ケイ素単結晶基板
CN102560672A (zh) * 2010-12-31 2012-07-11 中国科学院物理研究所 半绝缘碳化硅单晶材料
CN102560671B (zh) 2010-12-31 2015-05-27 中国科学院物理研究所 半绝缘碳化硅单晶
JP5953712B2 (ja) * 2011-11-22 2016-07-20 富士通株式会社 化合物半導体装置の製造方法、基板評価装置及び基板評価方法
US8679863B2 (en) * 2012-03-15 2014-03-25 International Business Machines Corporation Fine tuning highly resistive substrate resistivity and structures thereof
JP5943509B2 (ja) * 2012-03-30 2016-07-05 国立研究開発法人産業技術総合研究所 炭化珪素基板への成膜方法
CN104364428B (zh) * 2012-05-24 2017-09-05 Ⅱ－Ⅵ公司 钒补偿的NU型和PI型SI SiC单晶及其晶体生长方法
JP6295537B2 (ja) * 2013-07-17 2018-03-20 住友金属鉱山株式会社 炭化珪素基板ならびに半導体素子
JP6178181B2 (ja) 2013-09-12 2017-08-09 株式会社東芝 半導体装置及びその製造方法
JP6671124B2 (ja) * 2015-08-10 2020-03-25 ローム株式会社 窒化物半導体デバイス
JP6706786B2 (ja) * 2015-10-30 2020-06-10 一般財団法人電力中央研究所 エピタキシャルウェハの製造方法、エピタキシャルウェハ、半導体装置の製造方法及び半導体装置
CN107190323A (zh) * 2017-06-06 2017-09-22 宝鸡文理学院 一种生长低缺陷碳化硅单晶的方法
WO2020077846A1 (zh) 2018-10-16 2020-04-23 山东天岳先进材料科技有限公司 掺杂少量钒的半绝缘碳化硅单晶、衬底、制备方法
JP6806270B1 (ja) * 2019-06-20 2021-01-06 三菱電機株式会社 炭化ケイ素単結晶、半導体素子
WO2021020574A1 (ja) 2019-08-01 2021-02-04 ローム株式会社 半導体基板及び半導体装置並びにそれらの製造方法
JP7254663B2 (ja) 2019-08-27 2023-04-10 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
TWI698397B (zh) 2019-11-11 2020-07-11 財團法人工業技術研究院 碳化矽粉體的純化方法
JP2021195301A (ja) * 2020-06-18 2021-12-27 盛新材料科技股▲ふん▼有限公司Taisic Materials Corp. 半絶縁性単結晶炭化ケイ素粉末の製造方法
CN113818081A (zh) * 2020-06-18 2021-12-21 盛新材料科技股份有限公司 半绝缘单晶碳化硅块材以及粉末
TWI865578B (zh) 2020-06-18 2024-12-11 盛新材料科技股份有限公司 半絕緣單晶碳化矽塊材以及粉末
EP4206366A4 (de) * 2020-08-28 2024-11-06 Kyocera Corporation Verfahren zur herstellung von sic-polykristall
CN113668064B (zh) * 2021-07-29 2022-12-23 山西烁科晶体有限公司 一种优化碳化硅晶片电阻率的辐照方法
CN114093765B (zh) * 2022-01-18 2023-02-28 浙江大学杭州国际科创中心 一种提高碳化硅薄膜少子寿命的方法
WO2024014246A1 (ja) * 2022-07-14 2024-01-18 住友電気工業株式会社 炭化珪素結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP7215630B1 (ja) * 2022-08-22 2023-01-31 信越半導体株式会社 窒化物半導体基板及びその製造方法
WO2024100962A1 (ja) * 2022-11-10 2024-05-16 住友電気工業株式会社 炭化珪素基板、エピタキシャル基板の製造方法および半導体装置の製造方法
WO2024157718A1 (ja) * 2023-01-24 2024-08-02 住友電気工業株式会社 炭化珪素基板、エピタキシャル基板の製造方法および半導体装置の製造方法
WO2025047656A1 (ja) * 2023-08-28 2025-03-06 住友電気工業株式会社 炭化珪素基板、エピタキシャル基板の製造方法および半導体装置の製造方法
CN119010820B (zh) * 2024-10-24 2025-03-14 山东大学 一种声表面波器件的制备方法及声表面波器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4325804C3 (de) * 1993-07-31 2001-08-09 Daimler Chrysler Ag Verfahren zum Herstellen von hochohmigem Siliziumkarbid
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
EP0956594A1 (de) * 1997-01-31 1999-11-17 Northrop Grumman Corporation Siliziumcarbid substaten mit hohen spezifischem widerstand für hochleistungmiktmikrowellenanordnurgen
CN1272957A (zh) * 1997-09-30 2000-11-08 因芬尼昂技术股份公司 通过注入掺杂制成的碳化硅半导体的热修复法
JP2000351615A (ja) * 1999-04-07 2000-12-19 Ngk Insulators Ltd 炭化珪素体
US6396080B2 (en) * 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
JP4610039B2 (ja) * 2000-03-31 2011-01-12 ラム リサーチ コーポレーション プラズマ処理装置

Also Published As

Publication number Publication date
JP2009073734A (ja) 2009-04-09
US7018597B2 (en) 2006-03-28
WO2003038868A2 (en) 2003-05-08
SE0103602D0 (sv) 2001-10-29
SE0103602L (sv) 2003-04-30
JP2005507360A (ja) 2005-03-17
EP1440461A2 (de) 2004-07-28
CN1592949A (zh) 2005-03-09
CN1302518C (zh) 2007-02-28
JP4434736B2 (ja) 2010-03-17
US20030079676A1 (en) 2003-05-01
EP1440461B1 (de) 2019-07-17
JP4954959B2 (ja) 2012-06-20
WO2003038868A3 (en) 2003-11-27
AU2002347705A1 (en) 2003-05-12

Similar Documents

Publication Publication Date Title
SE520968C2 (sv) Högresistiv monokristallin kiselkarbid och metod för dess framställning
JP4987707B2 (ja) 低ドーピング半絶縁性ＳｉＣ結晶と方法
US8410488B2 (en) Micropipe-free silicon carbide and related method of manufacture
US5611955A (en) High resistivity silicon carbide substrates for high power microwave devices
KR101293157B1 (ko) ｐ형 ＳｉＣ 반도체 단결정의 성장방법 및 ｐ형 ＳｉＣ 반도체 단결정
KR20070054719A (ko) 낮은 나선 전위 밀도를 가지는 3인치 실리콘 카바이드웨이퍼
KR20110071092A (ko) 탄화규소 단결정 및 탄화규소 단결정 웨이퍼
KR20060065661A (ko) 수소를 포함하는 주위 분위기 중에서 초고순도 실리콘카바이드 결정을 성장시키는 방법
JP4470690B2 (ja) 炭化珪素単結晶、炭化珪素基板および炭化珪素単結晶の製造方法
Iwami Silicon carbide: fundamentals
Ferro Growth and doping of silicon carbide with germanium: a review
Bauman et al. On the successful growth of bulk gallium oxide crystals by the EFG (Stepanov) method
JP5487888B2 (ja) ｎ型ＳｉＣ単結晶の製造方法
Li et al. Nonuniformities of electrical resistivity in undoped 6H-SiC wafers
EP0956594A1 (de) Siliziumcarbid substaten mit hohen spezifischem widerstand für hochleistungmiktmikrowellenanordnurgen
JP2005008472A (ja) 高品質４ｈ型炭化珪素単結晶、および単結晶ウェハ
Look Defects Relevant for Compensation in Semi-Insulating GaAs
Huh et al. Residual impurities and native defects in 6H‐SiC bulk crystals grown by halide chemical-vapor deposition
Xu et al. SiC single crystal growth and substrate processing
Belal et al. Temperature dependence of electrical conductivity and hall effect of Ga2Se3 single crystal
JP2014031316A (ja) ｎ型ＳｉＣ単結晶およびその用途
Nakazawa et al. High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor deposition
Feitknecht Silicon carbide as a semiconductor
McD et al. and 4H-SiC crystals exhibiting residual impurities in the 105 cm³ range and corresponding
KR20210033272A (ko) 실리콘카바이드 단결정의 제조 방법 및 이에 의해 제조된 실리콘카바이드 단결정

Legal Events

Date Code Title Description
NUG Patent has lapsed