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Look, 1993 - Google Patents

Defects Relevant for Compensation in Semi-Insulating GaAs

Look, 1993

Document ID
16964906511339596256
Author
Look D
Publication year
Publication venue
Semiconductors and Semimetals

External Links

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Publisher Summary This chapter discusses defects relevant for compensation in semi- insulating gallium arsenide (GaAs). The chapter is mainly concerned with donor and acceptor defects, as opposed to impurities. About five years ago, it was commonly assumed …
Continue reading at www.sciencedirect.com (other versions)

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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • H01L21/02546—Arsenides
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    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
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    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
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    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

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