NL7200562A - - Google Patents

Info

Publication number: NL7200562A
Authority: NL; Netherlands

Application number

NL7200562A

Inventor

D Frohman-Bentchkowsky

Original Assignee

Intel Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1971-01-15

Filing date

1972-01-14

Publication date

1972-07-18

1972-01-14 Application filed by Intel Corp filed Critical Intel Corp

1972-07-18 Publication of NL7200562A publication Critical patent/NL7200562A/xx

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Non-Volatile Memory (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)
Semiconductor Memories (AREA)

NL7200562A 1971-01-15 1972-01-14 NL7200562A (xx)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US10664371A	1971-01-15	1971-01-15

Publications (1)

Publication Number	Publication Date
NL7200562A true NL7200562A (xx)	1972-07-18

Family

ID=22312502

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL7200562A NL7200562A (xx)	1971-01-15	1972-01-14

Country Status (8)

Country	Link
JP (1)	JPS5146382B1 (xx)
BE (1)	BE777996A (xx)
CA (1)	CA946524A (xx)
DE (1)	DE2201028C3 (xx)
FR (1)	FR2121824B1 (xx)
GB (1)	GB1383981A (xx)
IT (1)	IT962050B (xx)
NL (1)	NL7200562A (xx)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3797000A (en) *	1972-12-29	1974-03-12	Ibm	Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored information
US3836992A (en) *	1973-03-16	1974-09-17	Ibm	Electrically erasable floating gate fet memory cell
JPS5613029B2 (xx) *	1973-09-21	1981-03-25
DE2812049C2 (de) *	1974-09-20	1982-05-27	Siemens AG, 1000 Berlin und 8000 München	n-Kanal-Speicher-FET
DE2638730C2 (de) *	1974-09-20	1982-10-28	Siemens AG, 1000 Berlin und 8000 München	n-Kanal-Speicher-FET, Verfahren zum Entladen des Speichergate des n-Kanal-Speicher-FET und Verwendung des n-Kanal-Speicher-FET
DE2445079C3 (de) *	1974-09-20	1981-06-04	Siemens AG, 1000 Berlin und 8000 München	Speicher-Feldeffekttransistor
DE2513207C2 (de) *	1974-09-20	1982-07-01	Siemens AG, 1000 Berlin und 8000 München	n-Kanal-Speicher-FET
DE2525062C2 (de)	1975-06-05	1983-02-17	Siemens AG, 1000 Berlin und 8000 München	Matrixanordnung aus n-Kanal-Speicher-FET
DE2505816C3 (de) *	1974-09-20	1982-04-22	Siemens AG, 1000 Berlin und 8000 München	Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix
DE2643987C2 (de) *	1974-09-20	1984-03-29	Siemens AG, 1000 Berlin und 8000 München	n-Kanal-Speicher-FET
DE2560220C2 (de) *	1975-03-25	1982-11-25	Siemens AG, 1000 Berlin und 8000 München	n-Kanal-Speicher-FET
JPS5554415A (en) *	1978-10-16	1980-04-21	Nippon Gakki Seizo Kk	Method and device for space set averaging for reverberation waveform
DE2845328C2 (de) *	1978-10-18	1986-04-30	Deutsche Itt Industries Gmbh, 7800 Freiburg	Speichertransistor
JPS6162824A (ja) *	1985-06-22	1986-03-31	Nippon Gakki Seizo Kk	残響デ−タ圧縮取込方法およびその装置
WO2001024268A1 (en) *	1999-09-24	2001-04-05	Intel Corporation	A nonvolatile memory device with a high work function floating-gate and method of fabrication
US6518618B1 (en)	1999-12-03	2003-02-11	Intel Corporation	Integrated memory cell and method of fabrication

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3500142A (en) *	1967-06-05	1970-03-10	Bell Telephone Labor Inc	Field effect semiconductor apparatus with memory involving entrapment of charge carriers
CA813537A (en) *	1967-10-17	1969-05-20	Joseph H. Scott, Jr.	Semiconductor memory device

1972
- 1972-01-11 DE DE2201028A patent/DE2201028C3/de not_active Expired
- 1972-01-13 BE BE777996A patent/BE777996A/xx unknown
- 1972-01-13 FR FR7201101A patent/FR2121824B1/fr not_active Expired
- 1972-01-14 IT IT19378/72A patent/IT962050B/it active
- 1972-01-14 CA CA132,413A patent/CA946524A/en not_active Expired
- 1972-01-14 GB GB196072A patent/GB1383981A/en not_active Expired
- 1972-01-14 NL NL7200562A patent/NL7200562A/xx not_active Application Discontinuation
- 1972-01-17 JP JP47006261A patent/JPS5146382B1/ja active Pending

Also Published As

Publication number	Publication date
DE2201028B2 (de)	1979-01-18
IT962050B (it)	1973-12-20
JPS5146382B1 (xx)	1976-12-08
DE2201028C3 (de)	1981-07-09
FR2121824B1 (xx)	1977-04-01
CA946524A (en)	1974-04-30
BE777996A (fr)	1972-05-02
GB1383981A (en)	1974-02-12
FR2121824A1 (xx)	1972-08-25
DE2201028A1 (de)	1972-08-31

Publication	Publication Date	Title
FR2121824B1 (xx)	1977-04-01
AU2658571A (xx)	1972-09-21
AU2691671A (xx)	1972-09-28
AU2742671A (xx)	1972-10-12
AU2684071A (xx)	1972-09-28
AU2894671A (xx)	1972-11-23
AU2836771A (xx)	1972-11-09
AU2724971A (xx)	1972-10-05
AU2880771A (xx)	1972-11-16
AU2875571A (xx)	1972-11-16
AU2854371A (xx)	1972-11-09
AU2837671A (xx)	1972-11-09
AU2907471A (xx)	1972-11-23
AU2755871A (xx)	1972-10-19
AU2927871A (xx)	1972-11-30
AU2740271A (xx)	1972-10-12
AU2726271A (xx)	1972-10-05
AU2885171A (xx)	1972-11-16
AU2706571A (xx)	1971-07-15
AU2577671A (xx)	1972-08-24
AU2588771A (xx)	1972-08-31
AU2654071A (xx)	1972-09-21
AU2473671A (xx)	1972-08-03
AU2963771A (xx)	1972-12-07
AU2669471A (xx)	1972-09-21

Legal Events

Date	Code	Title	Description
1980-09-25	BV	The patent application has lapsed