CA813537A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- CA813537A CA813537A CA813537A CA813537DA CA813537A CA 813537 A CA813537 A CA 813537A CA 813537 A CA813537 A CA 813537A CA 813537D A CA813537D A CA 813537DA CA 813537 A CA813537 A CA 813537A
- Authority
- CA
- Canada
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/33—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67581967A | 1967-10-17 | 1967-10-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA813537A true CA813537A (en) | 1969-05-20 |
Family
ID=24712096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA813537A Expired CA813537A (en) | 1967-10-17 | Semiconductor memory device |
Country Status (11)
Country | Link |
---|---|
JP (2) | JPS4812372B1 (en) |
BE (1) | BE722411A (en) |
BR (1) | BR6802844D0 (en) |
CA (1) | CA813537A (en) |
DE (1) | DE1803035B2 (en) |
ES (1) | ES359165A1 (en) |
FR (1) | FR1593047A (en) |
GB (1) | GB1247892A (en) |
MY (1) | MY7300390A (en) |
NL (1) | NL6814796A (en) |
SU (1) | SU409454A3 (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2067335A1 (en) * | 1969-11-17 | 1971-08-20 | Inst Halvledarfors | |
US3633078A (en) * | 1969-10-24 | 1972-01-04 | Hughes Aircraft Co | Stable n-channel tetrode |
US3649884A (en) * | 1969-06-06 | 1972-03-14 | Nippon Electric Co | Field effect semiconductor device with memory function |
US3660819A (en) * | 1970-06-15 | 1972-05-02 | Intel Corp | Floating gate transistor and method for charging and discharging same |
US3728695A (en) * | 1971-10-06 | 1973-04-17 | Intel Corp | Random-access floating gate mos memory array |
JPS4843591A (en) * | 1971-10-04 | 1973-06-23 | ||
DE2261522A1 (en) * | 1971-12-17 | 1973-07-12 | Matsushita Electronics Corp | SEMI-CONDUCTOR STORAGE UNIT |
US3755721A (en) * | 1970-06-15 | 1973-08-28 | Intel Corp | Floating gate solid state storage device and method for charging and discharging same |
US3758797A (en) * | 1971-07-07 | 1973-09-11 | Signetics Corp | Solid state bistable switching device and method |
JPS4969091A (en) * | 1972-11-08 | 1974-07-04 | ||
JPS524151B1 (en) * | 1975-08-28 | 1977-02-01 | ||
JPS5223233B1 (en) * | 1976-08-28 | 1977-06-22 | ||
US4404659A (en) * | 1979-10-05 | 1983-09-13 | Hitachi, Ltd. | Programmable read only memory |
US4558344A (en) * | 1982-01-29 | 1985-12-10 | Seeq Technology, Inc. | Electrically-programmable and electrically-erasable MOS memory device |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2201028C3 (en) * | 1971-01-15 | 1981-07-09 | Intel Corp., Mountain View, Calif. | Method for operating a field effect transistor and field effect transistor for carrying out this method |
DE2125681C2 (en) * | 1971-05-24 | 1982-05-13 | Sperry Corp., 10104 New York, N.Y. | Memory with reduced write-on time - by using bipolar rectangular wave as gate signal for FETs |
CH539360A (en) * | 1971-09-30 | 1973-07-15 | Ibm | Semiconductor switching or memory device |
JPS5024084A (en) * | 1973-07-05 | 1975-03-14 | ||
JPS50150914A (en) * | 1974-05-24 | 1975-12-04 | ||
JPS5528232B2 (en) * | 1974-11-01 | 1980-07-26 | ||
EP0003413A3 (en) * | 1978-01-19 | 1979-08-22 | Sperry Corporation | Improvements relating to semiconductor memories |
DE19614010C2 (en) * | 1996-04-09 | 2002-09-19 | Infineon Technologies Ag | Semiconductor component with adjustable current amplification based on a tunnel current controlled avalanche breakdown and method for its production |
US10290352B2 (en) * | 2015-02-27 | 2019-05-14 | Qualcomm Incorporated | System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regions |
-
0
- CA CA813537A patent/CA813537A/en not_active Expired
-
1968
- 1968-09-27 GB GB45991/68A patent/GB1247892A/en not_active Expired
- 1968-10-02 SU SU1274193A patent/SU409454A3/ru active
- 1968-10-03 BR BR202844/68A patent/BR6802844D0/en unknown
- 1968-10-08 FR FR1593047D patent/FR1593047A/fr not_active Expired
- 1968-10-14 DE DE1803035A patent/DE1803035B2/en not_active Ceased
- 1968-10-15 ES ES359165A patent/ES359165A1/en not_active Expired
- 1968-10-16 NL NL6814796A patent/NL6814796A/xx unknown
- 1968-10-16 BE BE722411D patent/BE722411A/xx unknown
- 1968-10-17 JP JP7571768A patent/JPS4812372B1/ja active Pending
-
1973
- 1973-12-30 MY MY390/73A patent/MY7300390A/en unknown
-
1974
- 1974-04-16 JP JP4324574A patent/JPS5436446B1/ja active Pending
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3649884A (en) * | 1969-06-06 | 1972-03-14 | Nippon Electric Co | Field effect semiconductor device with memory function |
US3633078A (en) * | 1969-10-24 | 1972-01-04 | Hughes Aircraft Co | Stable n-channel tetrode |
FR2067335A1 (en) * | 1969-11-17 | 1971-08-20 | Inst Halvledarfors | |
US3755721A (en) * | 1970-06-15 | 1973-08-28 | Intel Corp | Floating gate solid state storage device and method for charging and discharging same |
US3660819A (en) * | 1970-06-15 | 1972-05-02 | Intel Corp | Floating gate transistor and method for charging and discharging same |
US3758797A (en) * | 1971-07-07 | 1973-09-11 | Signetics Corp | Solid state bistable switching device and method |
JPS5543264B2 (en) * | 1971-10-04 | 1980-11-05 | ||
JPS4843591A (en) * | 1971-10-04 | 1973-06-23 | ||
US3728695A (en) * | 1971-10-06 | 1973-04-17 | Intel Corp | Random-access floating gate mos memory array |
DE2261522A1 (en) * | 1971-12-17 | 1973-07-12 | Matsushita Electronics Corp | SEMI-CONDUCTOR STORAGE UNIT |
JPS4969091A (en) * | 1972-11-08 | 1974-07-04 | ||
JPS56950B2 (en) * | 1972-11-08 | 1981-01-10 | ||
JPS524151B1 (en) * | 1975-08-28 | 1977-02-01 | ||
JPS5223233B1 (en) * | 1976-08-28 | 1977-06-22 | ||
US4404659A (en) * | 1979-10-05 | 1983-09-13 | Hitachi, Ltd. | Programmable read only memory |
US4558344A (en) * | 1982-01-29 | 1985-12-10 | Seeq Technology, Inc. | Electrically-programmable and electrically-erasable MOS memory device |
Also Published As
Publication number | Publication date |
---|---|
BE722411A (en) | 1969-04-01 |
DE1803035A1 (en) | 1969-05-22 |
DE1803035B2 (en) | 1979-11-08 |
GB1247892A (en) | 1971-09-29 |
JPS4812372B1 (en) | 1973-04-20 |
MY7300390A (en) | 1973-12-31 |
BR6802844D0 (en) | 1973-01-04 |
SU409454A3 (en) | 1973-11-30 |
ES359165A1 (en) | 1970-05-16 |
JPS5436446B1 (en) | 1979-11-09 |
NL6814796A (en) | 1969-04-21 |
FR1593047A (en) | 1970-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA813537A (en) | Semiconductor memory device | |
CA755785A (en) | Semiconductor device | |
AU4317968A (en) | Semiconductor memory device | |
CA762634A (en) | Semiconductor device fabrication | |
AU424991B2 (en) | Semiconductor device | |
AU430247B2 (en) | Semiconductor device | |
AU429844B2 (en) | Semiconductor device | |
CA770835A (en) | Semiconductor device | |
CA768830A (en) | Semiconductor device | |
AU417023B2 (en) | Semiconductor device | |
AU423847B2 (en) | Semiconductor device | |
CA755781A (en) | Semiconductor device | |
AU432284B2 (en) | Semiconductor device | |
AU427341B2 (en) | Semiconductor device | |
AU430923B2 (en) | Semiconductor device | |
AU414274B2 (en) | Semiconductor device | |
AU407077B2 (en) | Memory device | |
AU413433B2 (en) | Improved semiconductor device | |
AU4116868A (en) | Semiconductor device | |
AU4712368A (en) | Semiconductor device | |
AU4506468A (en) | Semiconductor device | |
AU4791768A (en) | Semiconductor device | |
AU1883867A (en) | Semiconductor device | |
AU4796368A (en) | Semiconductor device | |
AU4093368A (en) | Semiconductor device |