CA946524A - Electrically alterable floating gate device and method for altering same - Google Patents

Electrically alterable floating gate device and method for altering same

Info

Publication number: CA946524A
Authority: CA; Canada
Prior art keywords: floating gate; gate device; electrically alterable; altering; same
Prior art date: 1971-01-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA132,413A

Other versions

CA132413S (en

Inventor

Frohman-Bentchkowsky

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Intel Corp

Original Assignee

Intel Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1971-01-15

Filing date

1972-01-14

Publication date

1974-04-30

1972-01-14 Application filed by Intel Corp filed Critical Intel Corp

1974-04-30 Application granted granted Critical

1974-04-30 Publication of CA946524A publication Critical patent/CA946524A/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Non-Volatile Memory (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)
Semiconductor Memories (AREA)

CA132,413A 1971-01-15 1972-01-14 Electrically alterable floating gate device and method for altering same Expired CA946524A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US10664371A	1971-01-15	1971-01-15

Publications (1)

Publication Number	Publication Date
CA946524A true CA946524A (en)	1974-04-30

Family

ID=22312502

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA132,413A Expired CA946524A (en)	1971-01-15	1972-01-14	Electrically alterable floating gate device and method for altering same

Country Status (8)

Country	Link
JP (1)	JPS5146382B1 (en)
BE (1)	BE777996A (en)
CA (1)	CA946524A (en)
DE (1)	DE2201028C3 (en)
FR (1)	FR2121824B1 (en)
GB (1)	GB1383981A (en)
IT (1)	IT962050B (en)
NL (1)	NL7200562A (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3797000A (en) *	1972-12-29	1974-03-12	Ibm	Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored information
US3836992A (en) *	1973-03-16	1974-09-17	Ibm	Electrically erasable floating gate fet memory cell
JPS5613029B2 (en) *	1973-09-21	1981-03-25
DE2812049C2 (en) *	1974-09-20	1982-05-27	Siemens AG, 1000 Berlin und 8000 München	n-channel memory FET
DE2638730C2 (en) *	1974-09-20	1982-10-28	Siemens AG, 1000 Berlin und 8000 München	N-channel memory FET, method of discharging the memory gate of the n-channel memory FET and using the n-channel memory FET
DE2445079C3 (en) *	1974-09-20	1981-06-04	Siemens AG, 1000 Berlin und 8000 München	Storage field effect transistor
DE2513207C2 (en) *	1974-09-20	1982-07-01	Siemens AG, 1000 Berlin und 8000 München	n-channel memory FET
DE2525062C2 (en)	1975-06-05	1983-02-17	Siemens AG, 1000 Berlin und 8000 München	N-channel memory FET array
DE2505816C3 (en) *	1974-09-20	1982-04-22	Siemens AG, 1000 Berlin und 8000 München	Method for operating an n-channel memory FET, n-channel memory FET for carrying out the method and applying the method to the n-channel memory FETs of a memory matrix
DE2643987C2 (en) *	1974-09-20	1984-03-29	Siemens AG, 1000 Berlin und 8000 München	n-channel memory FET
DE2560220C2 (en) *	1975-03-25	1982-11-25	Siemens AG, 1000 Berlin und 8000 München	n-channel memory FET
JPS5554415A (en) *	1978-10-16	1980-04-21	Nippon Gakki Seizo Kk	Method and device for space set averaging for reverberation waveform
DE2845328C2 (en) *	1978-10-18	1986-04-30	Deutsche Itt Industries Gmbh, 7800 Freiburg	Memory transistor
JPS6162824A (en) *	1985-06-22	1986-03-31	Nippon Gakki Seizo Kk	Method and apparatus for compressive intake of reverberation data
WO2001024268A1 (en) *	1999-09-24	2001-04-05	Intel Corporation	A nonvolatile memory device with a high work function floating-gate and method of fabrication
US6518618B1 (en)	1999-12-03	2003-02-11	Intel Corporation	Integrated memory cell and method of fabrication

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3500142A (en) *	1967-06-05	1970-03-10	Bell Telephone Labor Inc	Field effect semiconductor apparatus with memory involving entrapment of charge carriers
CA813537A (en) *	1967-10-17	1969-05-20	Joseph H. Scott, Jr.	Semiconductor memory device

1972
- 1972-01-11 DE DE2201028A patent/DE2201028C3/en not_active Expired
- 1972-01-13 BE BE777996A patent/BE777996A/en unknown
- 1972-01-13 FR FR7201101A patent/FR2121824B1/fr not_active Expired
- 1972-01-14 IT IT19378/72A patent/IT962050B/en active
- 1972-01-14 CA CA132,413A patent/CA946524A/en not_active Expired
- 1972-01-14 GB GB196072A patent/GB1383981A/en not_active Expired
- 1972-01-14 NL NL7200562A patent/NL7200562A/xx not_active Application Discontinuation
- 1972-01-17 JP JP47006261A patent/JPS5146382B1/ja active Pending

Also Published As

Publication number	Publication date
DE2201028B2 (en)	1979-01-18
IT962050B (en)	1973-12-20
JPS5146382B1 (en)	1976-12-08
DE2201028C3 (en)	1981-07-09
FR2121824B1 (en)	1977-04-01
BE777996A (en)	1972-05-02
GB1383981A (en)	1974-02-12
FR2121824A1 (en)	1972-08-25
NL7200562A (en)	1972-07-18
DE2201028A1 (en)	1972-08-31

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