NL151567B - Halfgeleiderinrichting met negatieve weerstandskarakteristiek. - Google Patents
Halfgeleiderinrichting met negatieve weerstandskarakteristiek.Info
- Publication number
- NL151567B NL151567B NL666611609A NL6611609A NL151567B NL 151567 B NL151567 B NL 151567B NL 666611609 A NL666611609 A NL 666611609A NL 6611609 A NL6611609 A NL 6611609A NL 151567 B NL151567 B NL 151567B
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- resistance characteristics
- negative resistance
- conductor device
- conductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B7/00—Heating by electric discharge
- H05B7/02—Details
- H05B7/06—Electrodes
- H05B7/08—Electrodes non-consumable
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5114165 | 1965-08-19 | ||
JP5114265 | 1965-08-19 | ||
JP5289765 | 1965-08-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6611609A NL6611609A (nl) | 1967-02-20 |
NL151567B true NL151567B (nl) | 1976-11-15 |
Family
ID=27294221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL666611609A NL151567B (nl) | 1965-08-19 | 1966-08-18 | Halfgeleiderinrichting met negatieve weerstandskarakteristiek. |
Country Status (4)
Country | Link |
---|---|
US (1) | US3461356A (nl) |
DE (1) | DE1564343B2 (nl) |
GB (1) | GB1168255A (nl) |
NL (1) | NL151567B (nl) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3537021A (en) * | 1968-09-09 | 1970-10-27 | Bell Telephone Labor Inc | Stable frequency-independent two-valley semiconductor device |
JPS4919957B1 (nl) * | 1970-04-24 | 1974-05-21 | ||
US3662232A (en) * | 1970-12-10 | 1972-05-09 | Fmc Corp | Semiconductor devices having low minority carrier lifetime and process for producing same |
CH539360A (de) * | 1971-09-30 | 1973-07-15 | Ibm | Halbleiterschalt- oder Speichervorrichtung |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2908871A (en) * | 1954-10-26 | 1959-10-13 | Bell Telephone Labor Inc | Negative resistance semiconductive apparatus |
US3008089A (en) * | 1958-02-20 | 1961-11-07 | Bell Telephone Labor Inc | Semiconductive device comprising p-i-n conductivity layers |
GB1058753A (en) * | 1962-11-02 | 1967-02-15 | Ass Elect Ind | Improvements relating to solid state devices |
DE1464779A1 (de) * | 1963-07-01 | 1970-09-24 | Asea Ab | Verfahren zum Herabsetzen des Leitspannungsfalls in einer Gleichrichteranordnung |
US3270258A (en) * | 1963-07-05 | 1966-08-30 | Int Rectifier Corp | Field effect transistor |
US3370209A (en) * | 1964-08-31 | 1968-02-20 | Gen Electric | Power bulk breakdown semiconductor devices |
US3374176A (en) * | 1965-01-04 | 1968-03-19 | Gen Electric | Process for making n-type zinc cadmium sulfide electroluminescent material |
-
1966
- 1966-08-01 US US569300A patent/US3461356A/en not_active Expired - Lifetime
- 1966-08-17 DE DE1966M0070615 patent/DE1564343B2/de active Pending
- 1966-08-17 GB GB36712/66A patent/GB1168255A/en not_active Expired
- 1966-08-18 NL NL666611609A patent/NL151567B/nl unknown
Also Published As
Publication number | Publication date |
---|---|
NL6611609A (nl) | 1967-02-20 |
DE1564343A1 (de) | 1969-07-24 |
GB1168255A (en) | 1969-10-22 |
DE1564343B2 (de) | 1971-08-15 |
US3461356A (en) | 1969-08-12 |
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