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NL1032187A1 - Werkwijze voor het genereren van een maskerpatroon, systeem voor het genereren van een maskerpatroon en computerprogrammaproduct. - Google Patents

Werkwijze voor het genereren van een maskerpatroon, systeem voor het genereren van een maskerpatroon en computerprogrammaproduct.

Info

Publication number
NL1032187A1
NL1032187A1 NL1032187A NL1032187A NL1032187A1 NL 1032187 A1 NL1032187 A1 NL 1032187A1 NL 1032187 A NL1032187 A NL 1032187A NL 1032187 A NL1032187 A NL 1032187A NL 1032187 A1 NL1032187 A1 NL 1032187A1
Authority
NL
Netherlands
Prior art keywords
generating
mask pattern
computer program
program product
mask
Prior art date
Application number
NL1032187A
Other languages
English (en)
Other versions
NL1032187C2 (nl
Inventor
Shuo-Yen Chou
Jaw-Jung Shin
Tsai-Sheng Gau
Burn-Jeng Lin
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of NL1032187A1 publication Critical patent/NL1032187A1/nl
Application granted granted Critical
Publication of NL1032187C2 publication Critical patent/NL1032187C2/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
NL1032187A 2005-07-29 2006-07-17 Werkwijze voor het genereren van een maskerpatroon, systeem voor het genereren van een maskerpatroon en computerprogrammaproduct. NL1032187C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19313305 2005-07-29
US11/193,133 US7266803B2 (en) 2005-07-29 2005-07-29 Layout generation and optimization to improve photolithographic performance

Publications (2)

Publication Number Publication Date
NL1032187A1 true NL1032187A1 (nl) 2007-01-30
NL1032187C2 NL1032187C2 (nl) 2007-10-09

Family

ID=37674018

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1032187A NL1032187C2 (nl) 2005-07-29 2006-07-17 Werkwijze voor het genereren van een maskerpatroon, systeem voor het genereren van een maskerpatroon en computerprogrammaproduct.

Country Status (4)

Country Link
US (1) US7266803B2 (nl)
CN (1) CN1904726B (nl)
NL (1) NL1032187C2 (nl)
TW (1) TWI308284B (nl)

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US7487489B2 (en) * 2005-02-28 2009-02-03 Yuri Granik Calculation system for inverse masks
US20110004856A1 (en) * 2005-02-28 2011-01-06 Yuri Granik Inverse Mask Design and Correction for Electronic Design
US20100023915A1 (en) * 2005-02-28 2010-01-28 Yuri Granik Calculation System For Inverse Masks
US7552416B2 (en) * 2005-02-28 2009-06-23 Yuri Granik Calculation system for inverse masks
US7493587B2 (en) * 2005-03-02 2009-02-17 James Word Chromeless phase shifting mask for integrated circuits using interior region
US8037429B2 (en) * 2005-03-02 2011-10-11 Mentor Graphics Corporation Model-based SRAF insertion
JP4828870B2 (ja) * 2005-06-09 2011-11-30 株式会社東芝 評価パタンの作成方法およびプログラム
US7512926B2 (en) * 2005-09-30 2009-03-31 Intel Corporation Phase-shifting masks with sub-wavelength diffractive optical elements
US7962868B2 (en) * 2005-10-28 2011-06-14 Freescale Semiconductor, Inc. Method for forming a semiconductor device using optical proximity correction for the optical lithography
US8165854B1 (en) * 2006-01-11 2012-04-24 Olambda, Inc. Computer simulation of photolithographic processing
US7836423B2 (en) * 2006-03-08 2010-11-16 Mentor Graphics Corporation Sum of coherent systems (SOCS) approximation based on object information
US20070253637A1 (en) * 2006-03-08 2007-11-01 Mentor Graphics Corp. Image intensity calculation using a sectored source map
US7954072B2 (en) * 2006-05-15 2011-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Model import for electronic design automation
JP2007317921A (ja) * 2006-05-26 2007-12-06 Toshiba Corp リソグラフィ・シミュレーション方法及びプログラム
EP1873663A1 (en) * 2006-06-27 2008-01-02 Takumi Technology Corporation Method for optimizing an integrated circuit physical layout
US7966579B2 (en) * 2006-08-04 2011-06-21 Infineon Technologies Ag Methods of optical proximity correction
US8370773B2 (en) * 2006-08-16 2013-02-05 Freescale Semiconductor, Inc. Method and apparatus for designing an integrated circuit using inverse lithography technology
US7856612B1 (en) 2006-09-28 2010-12-21 Gauda, Inc. Lithography mask design through mask functional optimization and spatial frequency analysis
US7587702B2 (en) * 2007-01-26 2009-09-08 International Business Machines Corporation Step-walk relaxation method for global optimization of masks
US7799487B2 (en) * 2007-02-09 2010-09-21 Ayman Yehia Hamouda Dual metric OPC
US7974728B2 (en) * 2007-05-04 2011-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. System for extraction of key process parameters from fault detection classification to enable wafer prediction
US7707538B2 (en) * 2007-06-15 2010-04-27 Brion Technologies, Inc. Multivariable solver for optical proximity correction
US8078309B1 (en) * 2008-03-31 2011-12-13 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method to create arbitrary sidewall geometries in 3-dimensions using liga with a stochastic optimization framework
US8069423B2 (en) * 2008-08-11 2011-11-29 Cadence Design Systems, Inc. System and method for model based multi-patterning optimization
US8006203B2 (en) * 2008-08-28 2011-08-23 Synopsys, Inc. Bulk image modeling for optical proximity correction
US8181128B2 (en) * 2008-10-13 2012-05-15 Synopsys, Inc. Method and apparatus for determining a photolithography process model which models the influence of topography variations
US8786824B2 (en) * 2009-06-10 2014-07-22 Asml Netherlands B.V. Source-mask optimization in lithographic apparatus
TWI397828B (zh) * 2009-07-06 2013-06-01 Univ Nat Taiwan 應用於雙圖案微影技術的佈局分解方法
NL2005523A (en) * 2009-10-28 2011-05-02 Asml Netherlands Bv Selection of optimum patterns in a design layout based on diffraction signature analysis.
NL2007577A (en) 2010-11-10 2012-05-14 Asml Netherlands Bv Optimization of source, mask and projection optics.
US9256708B2 (en) * 2010-11-17 2016-02-09 Cadence Design Systems, Inc. Method and system for automatic generation of solutions for circuit design rule violations
US8539392B2 (en) * 2011-02-24 2013-09-17 National Taiwan University Method for compensating proximity effects of particle beam lithography processes
US8473874B1 (en) 2011-08-22 2013-06-25 Cadence Design Systems, Inc. Method and apparatus for automatically fixing double patterning loop violations
US8516402B1 (en) 2011-08-22 2013-08-20 Cadence Design Systems, Inc. Method and apparatus for automatically fixing double patterning loop violations
TWI454954B (zh) * 2012-01-06 2014-10-01 Yao Ching Tseng Mask pattern layout method
NL2009982A (en) 2012-01-10 2013-07-15 Asml Netherlands Bv Source mask optimization to reduce stochastic effects.
US8656319B2 (en) * 2012-02-08 2014-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Optical proximity correction convergence control
JP2014107383A (ja) * 2012-11-27 2014-06-09 Renesas Electronics Corp マスクおよびその製造方法、ならびに半導体装置
CN103901713B (zh) * 2014-03-12 2017-01-18 北京理工大学 一种采用核回归技术的自适应光学邻近效应校正方法
TWI585512B (zh) * 2015-03-12 2017-06-01 力晶科技股份有限公司 提升圖案精密度的方法
WO2016192964A1 (en) * 2015-05-29 2016-12-08 Asml Netherlands B.V. Simulation of lithography using multiple-sampling of angular distribution of source radiation
WO2017091339A1 (en) * 2015-11-25 2017-06-01 International Business Machines Corporation Tool to provide integrated circuit masks with accurate dimensional compensation of patterns
US9870612B2 (en) 2016-06-06 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method for repairing a mask
CN111868625B (zh) * 2018-03-19 2024-01-23 Asml荷兰有限公司 用于确定图案形成装置的曲线图案的方法
TWI729334B (zh) * 2018-06-07 2021-06-01 荷蘭商Ａｓｍｌ荷蘭公司 用於判定器件之控制方案的方法、電腦程式和系統及用於判定多個器件處理之基板的方法
US11061321B1 (en) * 2019-06-24 2021-07-13 Synopsys, Inc. Obtaining a mask using a cost function gradient from a Jacobian matrix generated from a perturbation look-up table
EP4071553A1 (en) * 2021-04-07 2022-10-12 ASML Netherlands B.V. Method of determining at least a target layout and associated metrology apparatus

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US6664011B2 (en) 2001-12-05 2003-12-16 Taiwan Semiconductor Manufacturing Company Hole printing by packing and unpacking using alternating phase-shifting masks
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US7253753B2 (en) * 2002-02-26 2007-08-07 Broadcom Corporation Method and apparatus of performing sample rate conversion of a multi-channel audio signal
DE60319462T2 (de) * 2002-06-11 2009-03-12 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
US6973633B2 (en) * 2002-07-24 2005-12-06 George Lippincott Caching of lithography and etch simulation results
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Also Published As

Publication number Publication date
NL1032187C2 (nl) 2007-10-09
CN1904726B (zh) 2011-03-09
CN1904726A (zh) 2007-01-31
US20070028206A1 (en) 2007-02-01
TW200705232A (en) 2007-02-01
TWI308284B (en) 2009-04-01
US7266803B2 (en) 2007-09-04

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Effective date: 20070607

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