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NL1031104A1 - Systeem en werkwijze voor lithografie in halfgeleider productie. - Google Patents

Systeem en werkwijze voor lithografie in halfgeleider productie.

Info

Publication number
NL1031104A1
NL1031104A1 NL1031104A NL1031104A NL1031104A1 NL 1031104 A1 NL1031104 A1 NL 1031104A1 NL 1031104 A NL1031104 A NL 1031104A NL 1031104 A NL1031104 A NL 1031104A NL 1031104 A1 NL1031104 A1 NL 1031104A1
Authority
NL
Netherlands
Prior art keywords
lithography
semiconductor production
semiconductor
production
Prior art date
Application number
NL1031104A
Other languages
English (en)
Other versions
NL1031104C2 (nl
Inventor
Yung-Sung Yen
Kuei-Shun Chen
Chia-Shi Hsu
Yuh-Sen Chang
Hsiao-Tzu Lu
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of NL1031104A1 publication Critical patent/NL1031104A1/nl
Application granted granted Critical
Publication of NL1031104C2 publication Critical patent/NL1031104C2/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL1031104A 2005-02-09 2006-02-08 Systeem en werkwijze voor lithografie in halfgeleider productie. NL1031104C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/054,458 US7601466B2 (en) 2005-02-09 2005-02-09 System and method for photolithography in semiconductor manufacturing
US5445805 2005-02-09

Publications (2)

Publication Number Publication Date
NL1031104A1 true NL1031104A1 (nl) 2006-08-11
NL1031104C2 NL1031104C2 (nl) 2007-12-14

Family

ID=36780376

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1031104A NL1031104C2 (nl) 2005-02-09 2006-02-08 Systeem en werkwijze voor lithografie in halfgeleider productie.

Country Status (4)

Country Link
US (1) US7601466B2 (nl)
CN (1) CN1818791B (nl)
NL (1) NL1031104C2 (nl)
TW (1) TWI306271B (nl)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009018846A1 (en) * 2007-08-09 2009-02-12 Carl Zeiss Smt Ag Method of structuring a photosensitive material
US20090201474A1 (en) * 2008-02-13 2009-08-13 Sajan Marokkey Semiconductor Devices and Methods of Manufacture Thereof
US8745554B2 (en) * 2009-12-28 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Practical approach to layout migration
SG10201605473TA (en) * 2012-12-28 2016-09-29 Hoya Corp Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device
CN104460244A (zh) * 2013-12-30 2015-03-25 苏州矩阵光电有限公司 一种利用双重曝光技术辅助集成光学生产的工艺
US10274830B2 (en) 2016-01-27 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for dynamic lithographic exposure
DE102017100340B4 (de) 2016-01-27 2021-04-29 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum Entwickeln eines lichtempfindlichen Materials und Fotolithografiewerkzeug
KR20240142586A (ko) * 2016-12-20 2024-09-30 에베 그룹 에. 탈너 게엠베하 광-감지 층을 노광하기 위한 디바이스 및 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5308741A (en) * 1992-07-31 1994-05-03 Motorola, Inc. Lithographic method using double exposure techniques, mask position shifting and light phase shifting
DE4232844A1 (de) * 1992-09-30 1994-03-31 Siemens Ag Belichtungsverfahren und Maske für die optische Projektionslithographie
KR100263900B1 (ko) * 1993-03-04 2000-09-01 윤종용 마스크 및 그 제조방법
US6190840B1 (en) * 1997-06-18 2001-02-20 Kabushiki Kaisha Toshiba Resist pattern forming method
US6022644A (en) * 1998-03-18 2000-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Mask containing subresolution line to minimize proximity effect of contact hole
JP2000147743A (ja) * 1998-11-13 2000-05-26 Nec Corp 半導体製造用のレチクルとこれを用いた半導体装置の製造方法
KR100307631B1 (ko) * 1999-06-01 2001-09-29 윤종용 반도체소자의 미세패턴 형성방법
US6803178B1 (en) * 2001-06-25 2004-10-12 Advanced Micro Devices, Inc. Two mask photoresist exposure pattern for dense and isolated regions
US20030022112A1 (en) * 2001-07-27 2003-01-30 Juliana Arifin Structuring method
US7052808B2 (en) * 2003-02-11 2006-05-30 Infineon Technologies Ag Transmission mask with differential attenuation to improve ISO-dense proximity

Also Published As

Publication number Publication date
TWI306271B (en) 2009-02-11
US20060177778A1 (en) 2006-08-10
TW200629372A (en) 2006-08-16
US7601466B2 (en) 2009-10-13
CN1818791A (zh) 2006-08-16
CN1818791B (zh) 2010-05-12
NL1031104C2 (nl) 2007-12-14

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AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20071008

PD2B A search report has been drawn up