[go: up one dir, main page]

KR970051145A - 전위 발생회로 - Google Patents

전위 발생회로 Download PDF

Info

Publication number
KR970051145A
KR970051145A KR1019960064182A KR19960064182A KR970051145A KR 970051145 A KR970051145 A KR 970051145A KR 1019960064182 A KR1019960064182 A KR 1019960064182A KR 19960064182 A KR19960064182 A KR 19960064182A KR 970051145 A KR970051145 A KR 970051145A
Authority
KR
South Korea
Prior art keywords
node
output node
gate
disposed
forward direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019960064182A
Other languages
English (en)
Other versions
KR100270001B1 (ko
Inventor
요우이치 토비타
Original Assignee
키타오카 타카시
미쓰비시 덴키 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 키타오카 타카시, 미쓰비시 덴키 가부시끼가이샤 filed Critical 키타오카 타카시
Publication of KR970051145A publication Critical patent/KR970051145A/ko
Application granted granted Critical
Publication of KR100270001B1 publication Critical patent/KR100270001B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Read Only Memory (AREA)

Abstract

전위 발생회로는 각각이 다이오드 접속되고 출력 노드와 소정의 전위 노드 사이에 동일한 순방향으로 배치되도록 직렬 접속되고, 각 백 게이트가 그의 게이트에 접속되고, 각 백 게이트가 그의 게이트에 접속되는 적어도 1쌍의 MOS 트랜지스터와, 상기 1쌍의 MOS 트랜지스터의 접속노드와 교번적인 신호가 입력되는 입력 노드 사이에 접속되는 캐패시터를 포함한다.

Description

전위 발생회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 실시예 1에 있어서의 Vbb발생회로도,
제5도는 본 발명의 다른 실시예에 있어서의 Vbb발생회로의 예를 도시한 회로도
제9도는 본 발명에 있어서의 Vpp 발생회로도.

Claims (3)

  1. 각각이 다이오드 접속되고 출력 노드와 소정의 전위 노드 사이에 동일한 순방향으로 배치되도록 직렬 접속되고, 각 백 게이트가 그의 게이트에 적어도 1쌍의 MOS 트랜지스터와, 상기 1쌍의 MOS트랜지스터의 접속노드와 교번적인 신호가 입력되는 입력 노드 사이에 접속되는 캐패시터를 포함하는 전위 발생회로.
  2. 제1항에 있어서, 상기 2개의 MOS트랜지스터는 다이오드 접속되고 출력 노드와 접지 전위 노드 사이에서 상기 출력 노드에서 상기 접지 전위 노드로 순방향으로 배치되도록 직렬 접속되는 전위 발생 회로.
  3. 제1항에 있어서, 상기 2개의 MOS 트랜지스터는 다이오드 접속되고 출력 노드와 전원 전위 노드 사이에서 상기 전원 전위 노드에서 상기 출력 노드로 순방향으로 배치되도록 직렬 접속되고, 전원 전위 노드와 출력 노드 사이에 상기 전원 전위 노드에서 상기 출력 노드로 순방향으로 배치되도록 다이오드 접속되고, 백 게이트가 그의 게이트에 접속되는 차지용(Charging) MOS 트랜지스터를 더 포함하는 전위 발생회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960064182A 1995-12-11 1996-12-11 전위 발생 회로 Expired - Fee Related KR100270001B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7321760A JPH09162713A (ja) 1995-12-11 1995-12-11 半導体集積回路
JP95-321760 1995-12-11

Publications (2)

Publication Number Publication Date
KR970051145A true KR970051145A (ko) 1997-07-29
KR100270001B1 KR100270001B1 (ko) 2000-10-16

Family

ID=18136144

Family Applications (4)

Application Number Title Priority Date Filing Date
KR1019960064181A Expired - Fee Related KR100270000B1 (ko) 1995-12-11 1996-12-11 승압펄스 발생회로
KR1019960064180A Expired - Fee Related KR100231951B1 (ko) 1995-12-11 1996-12-11 반도체 집적회로
KR1019960064183A Expired - Fee Related KR100270002B1 (ko) 1995-12-11 1996-12-11 중간 전위 발생회로
KR1019960064182A Expired - Fee Related KR100270001B1 (ko) 1995-12-11 1996-12-11 전위 발생 회로

Family Applications Before (3)

Application Number Title Priority Date Filing Date
KR1019960064181A Expired - Fee Related KR100270000B1 (ko) 1995-12-11 1996-12-11 승압펄스 발생회로
KR1019960064180A Expired - Fee Related KR100231951B1 (ko) 1995-12-11 1996-12-11 반도체 집적회로
KR1019960064183A Expired - Fee Related KR100270002B1 (ko) 1995-12-11 1996-12-11 중간 전위 발생회로

Country Status (5)

Country Link
US (4) US5815446A (ko)
JP (1) JPH09162713A (ko)
KR (4) KR100270000B1 (ko)
CN (4) CN1090819C (ko)
TW (4) TW293124B (ko)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE40552E1 (en) 1990-04-06 2008-10-28 Mosaid Technologies, Inc. Dynamic random access memory using imperfect isolating transistors
JP3378457B2 (ja) * 1997-02-26 2003-02-17 株式会社東芝 半導体装置
US6300819B1 (en) * 1997-06-20 2001-10-09 Intel Corporation Circuit including forward body bias from supply voltage and ground nodes
US6593799B2 (en) 1997-06-20 2003-07-15 Intel Corporation Circuit including forward body bias from supply voltage and ground nodes
JP3022815B2 (ja) * 1997-07-24 2000-03-21 日本電気アイシーマイコンシステム株式会社 中間電位生成回路
US5939928A (en) * 1997-08-19 1999-08-17 Advanced Micro Devices, Inc. Fast high voltage NMOS pass gate for integrated circuit with high voltage generator
US5942925A (en) * 1997-09-30 1999-08-24 Siemens Aktiengesellschaft Power-on detection and enabling circuit with very fast detection of power-off
US5959444A (en) * 1997-12-12 1999-09-28 Micron Technology, Inc. MOS transistor circuit and method for biasing a voltage generator
US6232826B1 (en) * 1998-01-12 2001-05-15 Intel Corporation Charge pump avoiding gain degradation due to the body effect
JP3385960B2 (ja) * 1998-03-16 2003-03-10 日本電気株式会社 負電圧チャージポンプ回路
JP3935266B2 (ja) * 1998-05-08 2007-06-20 松下電器産業株式会社 電圧検知回路
IT1301936B1 (it) * 1998-08-27 2000-07-07 St Microelectronics Srl Circuito a pompa di carica per dispositivi integrati di memoria
JP2000149582A (ja) * 1998-09-08 2000-05-30 Toshiba Corp 昇圧回路，電圧発生回路及び半導体メモリ
US6473852B1 (en) 1998-10-30 2002-10-29 Fairchild Semiconductor Corporation Method and circuit for performing automatic power on reset of an integrated circuit
JP3799869B2 (ja) * 1999-03-30 2006-07-19 セイコーエプソン株式会社 電源回路を搭載した半導体装置並びにそれを用いた液晶装置及び電子機器
US6191643B1 (en) * 1999-03-31 2001-02-20 Sony Corporation Voltage boost circuitry for hard drive write preamplifiers
JP4960544B2 (ja) * 2000-07-06 2012-06-27 エルピーダメモリ株式会社 半導体記憶装置及びその制御方法
US6636103B2 (en) * 2001-04-18 2003-10-21 Analog Devices, Inc. Amplifier system with on-demand power supply boost
US7049855B2 (en) * 2001-06-28 2006-05-23 Intel Corporation Area efficient waveform evaluation and DC offset cancellation circuits
JP2003168290A (ja) * 2001-11-29 2003-06-13 Fujitsu Ltd 電源回路及び半導体装置
WO2003071373A1 (fr) * 2002-02-22 2003-08-28 Mitsubishi Denki Kabushiki Kaisha Circuit generateur de tension
US6670845B1 (en) * 2002-07-16 2003-12-30 Silicon Storage Technology, Inc. High D.C. voltage to low D.C. voltage circuit converter
US6784722B2 (en) * 2002-10-09 2004-08-31 Intel Corporation Wide-range local bias generator for body bias grid
JP4417262B2 (ja) * 2003-01-17 2010-02-17 ティーピーオー、ホンコン、ホールディング、リミテッド チャージポンプ回路
JP2007527188A (ja) * 2003-06-30 2007-09-20 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 集積回路装置の保護回路
KR100691485B1 (ko) * 2003-07-29 2007-03-09 주식회사 하이닉스반도체 액티브 모드시에 전류소모를 줄일 수 있는 반도체 메모리장치
KR100539252B1 (ko) * 2004-03-08 2005-12-27 삼성전자주식회사 데이터 버스 및 커맨드/어드레스 버스를 통해 전송되는신호의 충실도를 향상시킬 수 있는 메모리 모듈 및 이를포함하는 메모리 시스템
EP1744569B1 (en) * 2004-09-30 2009-02-18 Huawei Technologies Co., Ltd. Method and system of realizing communication
US8335115B2 (en) * 2004-12-30 2012-12-18 Samsung Electronics Co., Ltd. Semiconductor memory module and semiconductor memory system having termination resistor units
US7996590B2 (en) * 2004-12-30 2011-08-09 Samsung Electronics Co., Ltd. Semiconductor memory module and semiconductor memory system having termination resistor units
US7621463B2 (en) * 2005-01-12 2009-11-24 Flodesign, Inc. Fluid nozzle system using self-propelling toroidal vortices for long-range jet impact
US7737765B2 (en) * 2005-03-14 2010-06-15 Silicon Storage Technology, Inc. Fast start charge pump for voltage regulators
US7362084B2 (en) * 2005-03-14 2008-04-22 Silicon Storage Technology, Inc. Fast voltage regulators for charge pumps
JP4712519B2 (ja) * 2005-05-27 2011-06-29 フリースケール セミコンダクター インコーポレイテッド ハイサイド駆動回路用チャージポンプ回路及びドライバ駆動電圧回路
JP2007043661A (ja) * 2005-06-30 2007-02-15 Oki Electric Ind Co Ltd 遅延回路
JP4800700B2 (ja) * 2005-08-01 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた半導体集積回路
JP4940797B2 (ja) * 2005-10-03 2012-05-30 セイコーエプソン株式会社 半導体装置の製造方法
US7605618B2 (en) * 2006-01-12 2009-10-20 Qualcomm, Incorporated Digital output driver and input buffer using thin-oxide field effect transistors
WO2008001255A1 (en) * 2006-06-26 2008-01-03 Nxp B.V. A constant voltage generating device
KR100928932B1 (ko) 2007-08-08 2009-11-30 엘에스산전 주식회사 무선 주파수 식별 태그 칩용 전압 증배기 및 이를 이용한무선 주파수 식별 태그
TW200919959A (en) * 2007-10-31 2009-05-01 Au Optronics Corp Charge pump system and method of operating the same
KR100902060B1 (ko) 2008-05-08 2009-06-15 주식회사 하이닉스반도체 반도체 메모리 장치의 펌핑 전압 생성 회로 및 방법
TWI410185B (zh) * 2009-01-05 2013-09-21 Himax Tech Ltd 參考電壓／電流產生系統之佈局
CN102148614B (zh) * 2010-02-10 2015-11-11 上海华虹宏力半导体制造有限公司 脉冲产生电路及方法、基准电压产生及其推动电路及方法
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
CN103092245B (zh) * 2013-01-09 2014-08-20 卓捷创芯科技（深圳）有限公司 一种超低功耗的低压差稳压电源电路与射频识别标签
TWI663820B (zh) 2013-08-21 2019-06-21 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP2016021638A (ja) * 2014-07-14 2016-02-04 株式会社ソシオネクスト 半導体装置
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI551044B (zh) * 2015-05-15 2016-09-21 華邦電子股份有限公司 電源閘電路及其電源閘開關控制方法
JP6811084B2 (ja) * 2015-12-18 2021-01-13 株式会社半導体エネルギー研究所 半導体装置
CN109427309A (zh) * 2017-08-22 2019-03-05 京东方科技集团股份有限公司 源极驱动增强电路、源极驱动增强方法、源极驱动电路和显示设备
JP7000187B2 (ja) * 2018-02-08 2022-01-19 エイブリック株式会社 基準電圧回路及び半導体装置
CN110667334B (zh) * 2019-10-11 2021-03-19 广东美的制冷设备有限公司 车载空调器及其低功耗待机方法和电路
KR102520454B1 (ko) * 2021-11-25 2023-04-11 재단법인대구경북과학기술원 차동 바이폴라 구조에 기반하는 펄스 부스트 장치

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3823332A (en) * 1970-01-30 1974-07-09 Rca Corp Mos fet reference voltage supply
US3805095A (en) * 1972-12-29 1974-04-16 Ibm Fet threshold compensating bias circuit
JPS57157315A (en) * 1981-03-24 1982-09-28 Nec Corp Intermediate voltage generating circuit
US4559548A (en) * 1981-04-07 1985-12-17 Tokyo Shibaura Denki Kabushiki Kaisha CMOS Charge pump free of parasitic injection
US4422163A (en) * 1981-09-03 1983-12-20 Vend-A-Copy, Inc. Power down circuit for data protection in a microprocessor-based system
JPS60103827A (ja) * 1983-11-11 1985-06-08 Fujitsu Ltd 電圧変換回路
JPS60122416A (ja) * 1984-07-25 1985-06-29 Hitachi Ltd 基板バイアス電圧発生回路
US4698789A (en) * 1984-11-30 1987-10-06 Kabushiki Kaisha Toshiba MOS semiconductor device
JPS61221812A (ja) * 1985-03-27 1986-10-02 Mitsubishi Electric Corp 電圧発生回路
US4663584B1 (en) * 1985-06-10 1996-05-21 Toshiba Kk Intermediate potential generation circuit
US4788455A (en) * 1985-08-09 1988-11-29 Mitsubishi Denki Kabushiki Kaisha CMOS reference voltage generator employing separate reference circuits for each output transistor
JPH0612797B2 (ja) * 1985-09-09 1994-02-16 オムロン株式会社 半導体装置
JPH072005B2 (ja) * 1985-10-08 1995-01-11 ソニー株式会社 昇圧回路
JPS62188255A (ja) * 1986-02-13 1987-08-17 Toshiba Corp 基準電圧発生回路
JPH073947B2 (ja) * 1986-07-09 1995-01-18 株式会社東芝 昇圧回路
JP2509596B2 (ja) * 1987-01-14 1996-06-19 株式会社東芝 中間電位生成回路
NL8701278A (nl) * 1987-05-29 1988-12-16 Philips Nv Geintegreerde cmos-schakeling met een substraatvoorspanningsgenerator.
JPS6427094A (en) * 1987-07-23 1989-01-30 Mitsubishi Electric Corp Mos-type semiconductor memory
JPS6432715A (en) * 1987-07-29 1989-02-02 Seiko Instr & Electronics Semiconductor integrated circuit device
JPH0690655B2 (ja) * 1987-12-18 1994-11-14 株式会社東芝 中間電位発生回路
JPH0673092B2 (ja) * 1988-04-12 1994-09-14 日本電気株式会社 定電圧発生回路
JPH0355613A (ja) * 1989-07-25 1991-03-11 Toshiba Corp 中間電位生成回路
KR940003153B1 (ko) * 1991-04-12 1994-04-15 금성일렉트론 주식회사 백바이어스 발생회로
US5160860A (en) * 1991-09-16 1992-11-03 Advanced Micro Devices, Inc. Input transition responsive CMOS self-boost circuit
JP2771729B2 (ja) * 1992-04-16 1998-07-02 三菱電機株式会社 チャージポンプ回路
JP3381937B2 (ja) * 1992-05-22 2003-03-04 株式会社東芝 中間電位発生回路
KR0135735B1 (ko) * 1992-11-04 1998-05-15 기다오까 다까시 소음발생을 억제하는 개량된 출력 드라이버 회로 및 번인테스트를 위한 개량된 반도체 집적회로 장치
JPH06223568A (ja) * 1993-01-29 1994-08-12 Mitsubishi Electric Corp 中間電位発生装置
JP3307453B2 (ja) * 1993-03-18 2002-07-24 ソニー株式会社 昇圧回路
JP3311133B2 (ja) * 1994-02-16 2002-08-05 株式会社東芝 出力回路
JP3148070B2 (ja) * 1994-03-29 2001-03-19 株式会社東芝 電圧変換回路
US5644266A (en) * 1995-11-13 1997-07-01 Chen; Ming-Jer Dynamic threshold voltage scheme for low voltage CMOS inverter

Also Published As

Publication number Publication date
TW381206B (en) 2000-02-01
CN1079981C (zh) 2002-02-27
US5815446A (en) 1998-09-29
CN1158500A (zh) 1997-09-03
CN1091974C (zh) 2002-10-02
KR100270001B1 (ko) 2000-10-16
TW409395B (en) 2000-10-21
CN1090819C (zh) 2002-09-11
US5726941A (en) 1998-03-10
KR970051294A (ko) 1997-07-29
CN1096118C (zh) 2002-12-11
KR970051173A (ko) 1997-07-29
JPH09162713A (ja) 1997-06-20
US5717324A (en) 1998-02-10
KR100270000B1 (ko) 2000-10-16
CN1158516A (zh) 1997-09-03
KR100231951B1 (ko) 1999-12-01
TW321805B (ko) 1997-12-01
TW293124B (en) 1996-12-11
KR100270002B1 (ko) 2000-10-16
CN1159656A (zh) 1997-09-17
CN1158501A (zh) 1997-09-03
US5812015A (en) 1998-09-22

Similar Documents

Publication Publication Date Title
KR970051145A (ko) 전위 발생회로
KR970013707A (ko) 레벨 시프트 반도체 장치
KR940004973A (ko) 반도체 소자의 모스(mos) 발진기
KR900002566A (ko) 버퍼회로
KR950004272A (ko) 반도체 메모리 장치의 칩 초기화 신호 발생장치
KR920015365A (ko) 입출력 버퍼회로
KR920020854A (ko) 백바이어스 발생회로
KR970029753A (ko) 승압 전원을 갖는 반도체 메모리 장치
KR940012849A (ko) 온-칩 전압강하 변환기를 갖는 집적회로용 스트레스 모드 회로
KR940024629A (ko) 통신회로시스템
KR900011152A (ko) 전원전압 강하검파 및 초기화회로 재설정 회로
KR970072701A (ko) 정전기 보호회로
KR950026101A (ko) 링 발진 회로
KR880012006A (ko) Rc 시정수를 이용한 가변 클럭 지연회로
KR960019978A (ko) 펄스 발생기
KR930011274A (ko) 입력회로
KR890004495A (ko) 리셋트신호 발생회로
KR950012459A (ko) 다(多)비트 출력 메모리 회로용 출력 회로
KR870000804A (ko) Cmos파워-온 검출회로
KR950015377A (ko) 어드레스 천이 검출회로
KR970053974A (ko) 전압 발생 회로 및 반도체 장치
KR970029746A (ko) 듀얼 백 바이어스 공급 장치
KR970049214A (ko) 고전압 검출회로
KR970051095A (ko) 챠지펌프 회로
KR940004963A (ko) 최대치회로

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19961211

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19961211

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19990630

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20000621

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20000727

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20000728

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20030723

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20040723

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20050722

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20060725

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20070723

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20080721

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20080721

Start annual number: 9

End annual number: 9

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

Termination category: Default of registration fee

Termination date: 20100610