KR970018877A - 반도체 레이저 부품의 제조 방법 - Google Patents
반도체 레이저 부품의 제조 방법 Download PDFInfo
- Publication number
- KR970018877A KR970018877A KR1019960041828A KR19960041828A KR970018877A KR 970018877 A KR970018877 A KR 970018877A KR 1019960041828 A KR1019960041828 A KR 1019960041828A KR 19960041828 A KR19960041828 A KR 19960041828A KR 970018877 A KR970018877 A KR 970018877A
- Authority
- KR
- South Korea
- Prior art keywords
- support plate
- semiconductor body
- manufacturing
- semiconductor
- semiconductor laser
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims 10
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract 6
- 229910000679 solder Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8582—Means for heat extraction or cooling characterised by their shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02375—Positioning of the laser chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8581—Means for heat extraction or cooling characterised by their material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (11)
- 적어도 표면의 부분 영역 상에 커버링층(12, 13)을 포함하는 반도체 몸체(1)를 지지체 플레이트(3) 상에 고정시키는, 반도체 레이저 부품의 제조 방법에 있어서, 반도체 몸체(1)의 고정 후에 커버링층(12, 13)을 지지체 플레이트(3) 상에 제공하는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
- 제1항에 있어서, 지지체 플레이트(3)가 양호한 열 전도성 및 양호한 전기 전도성을 갖는 재료로 이루어지는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
- 제1항 또는 2항에 있어서, 지지체 플레이트(3)가 반도체 몸체(1)의 반도체 재료와 유사한 열 팽창 계수를 갖는 재료로 이루어지는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
- 제1항 내지 3항 중 어느 한 항에 있어서, 반도체 몸체(1)의 적어도 한 측면(10, 11)이 지지체 플레이트(3)의 한 측면(14, 15)과 동일한 평면에서 끝나도록, 반도체 몸체(1)가 지지체 플레이트(3) 상에 위치 설정되는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
- 제1항 내지 4항 중 어느 한 항에 있어서, 지지체 플레이트(3)가 Mo로 이루어지는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
- 제1항 내지 5중 중 어느 한 항에 있어서, 지지체 플레이트(3)상에 반도체 몸체(1)를 고정시키기 위해, 경질 땝납(4)이 사용되는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
- 제1항 내지 6항 중 어느 한 항에 있어서, 커버링층(12, 13)이 미러층이고, 2개의 마주 놓인 측면(10, 11)에서 반도체 몸체(1) 상에 제공되는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
- 제7항에 있어서, 적어도 반도체 몸체(1)로부터 레이저 빔(17)이 배출되는 반도체 몸체(1)의 측면(10 또는 11)이 지지체 플레이트(3)의 측면(14, 15)과 동일한 평면에서 끝나도록, 반도체 몸체(1)가 지지체 플레이트(3)상에 위치 설정되는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
- 제1항 또는 8항 중 어느 한 항에 있어서, 지지체 플레이트(3) 상부면(18)의 폭의 반도체 몸체(1)의 2개의 마주놓인 측면(10, 11)의 간격에 대략 상응하도록 설정되는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
- 제1항 내지 9항 중 어느 한 항에 있어서, 지지체 플레이트(3)의 적어도 한 측면(14, 15)이 경사진 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
- 제1항 내지 10항 중 어느 한 항에 있어서, 지지체 플레이트(3)의 측면(14, 15)중 적어도 하나의 적어도 일부상에 미러층(12, 13)의 적어도 일부가 제공되는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19536434A DE19536434C2 (de) | 1995-09-29 | 1995-09-29 | Verfahren zum Herstellen eines Halbleiterlaser-Bauelements |
DE19536434.1 | 1995-09-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970018877A true KR970018877A (ko) | 1997-04-30 |
KR100437705B1 KR100437705B1 (ko) | 2004-08-02 |
Family
ID=7773648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960041828A KR100437705B1 (ko) | 1995-09-29 | 1996-09-24 | 반도체레이저부품의제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5943553A (ko) |
EP (1) | EP0766355A1 (ko) |
JP (1) | JP3108371B2 (ko) |
KR (1) | KR100437705B1 (ko) |
DE (1) | DE19536434C2 (ko) |
TW (1) | TW434918B (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19611046A1 (de) * | 1996-03-20 | 1997-09-25 | Siemens Ag | Halbleitervorrichtung |
DE19730118B4 (de) | 1997-07-14 | 2006-01-12 | Infineon Technologies Ag | Verfahren und Vorrichtung zur Herstellung einer Chip-Substrat-Verbindung |
DE19746835A1 (de) * | 1997-10-23 | 1999-05-06 | Jenoptik Jena Gmbh | Verfahren zum Montieren einer einseitig mit einer HR-Schicht beschichteten Laserkristallscheibe auf einen Kühlkörper und verfahrensgemäß hergestellte Schichtanordnung |
US6355505B1 (en) * | 1998-04-08 | 2002-03-12 | Fuji Photo Film Co., Ltd. | Heat sink and method of manufacturing heat sink |
US20010042866A1 (en) | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
US6674775B1 (en) | 2000-02-18 | 2004-01-06 | Jds Uniphase Corporation | Contact structure for semiconductor lasers |
US8028531B2 (en) * | 2004-03-01 | 2011-10-04 | GlobalFoundries, Inc. | Mitigating heat in an integrated circuit |
TWI303115B (en) | 2006-04-13 | 2008-11-11 | Epistar Corp | Semiconductor light emitting device |
TWM540949U (zh) * | 2016-12-07 | 2017-05-01 | 全球傳動科技股份有限公司 | 直線傳動模組 |
JP6939120B2 (ja) * | 2017-06-19 | 2021-09-22 | 住友電気工業株式会社 | 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法 |
JP6939119B2 (ja) * | 2017-06-19 | 2021-09-22 | 住友電気工業株式会社 | 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法 |
JP6911567B2 (ja) | 2017-06-22 | 2021-07-28 | 住友電気工業株式会社 | 量子カスケード半導体レーザ |
US10608412B2 (en) * | 2017-06-19 | 2020-03-31 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser, light emitting apparatus |
US10476235B2 (en) * | 2017-06-22 | 2019-11-12 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser |
US10476237B2 (en) * | 2017-06-22 | 2019-11-12 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser |
US10404038B2 (en) * | 2017-06-22 | 2019-09-03 | Sumitomo Electric Industries, Ltd. | Quantum cascade laser |
EP3633805A1 (en) * | 2018-10-01 | 2020-04-08 | Universität Stuttgart | Method and apparatus for producing a radiation field amplifying system |
DE102020132133A1 (de) | 2020-12-03 | 2022-06-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes laserbauteil und verfahren zur herstellung eines strahlungsemittierenden laserbauteils |
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US3614550A (en) * | 1969-01-09 | 1971-10-19 | Ibm | A semiconductor laser device with improved operating efficiency |
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US3946334A (en) * | 1973-11-14 | 1976-03-23 | Nippon Electric Company, Limited | Injection semiconductor laser device |
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FR2273438A1 (en) * | 1974-05-29 | 1975-12-26 | Radiotechnique Compelec | Fabrication of discrete light-emitting diodes - using thin absorbing layer deposited on lateral faces after separation |
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US4178564A (en) * | 1976-01-15 | 1979-12-11 | Rca Corporation | Half wave protection layers on injection lasers |
US4210878A (en) * | 1976-01-20 | 1980-07-01 | Nippon Electric Co., Ltd. | Semiconductor laser element having a unitary film on a laser crystal and a heat sink thereof |
US4064621A (en) * | 1976-09-16 | 1977-12-27 | General Motors Corporation | Cadmium diffused Pb1-x Snx Te diode laser |
JPS5837713B2 (ja) * | 1978-12-01 | 1983-08-18 | 富士通株式会社 | 半導体レ−ザ−装置の製造方法 |
US4257156A (en) * | 1979-03-09 | 1981-03-24 | General Electric Company | Method for thermo-compression diffusion bonding each side of a substrateless semiconductor device wafer to respective structured copper strain buffers |
JPS55156343A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Manufacture of semiconductor device |
JPS5891692A (ja) * | 1981-11-27 | 1983-05-31 | Hitachi Ltd | 半導体レ−ザ装置 |
JPS612371A (ja) * | 1984-06-14 | 1986-01-08 | Mitsubishi Electric Corp | 半導体受光装置 |
JPS63181491A (ja) * | 1987-01-23 | 1988-07-26 | Matsushita Electric Ind Co Ltd | ヒ−トシンク |
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JPS63318188A (ja) * | 1987-06-19 | 1988-12-27 | Sharp Corp | 半導体レ−ザアレイ装置 |
US4769684A (en) * | 1987-07-07 | 1988-09-06 | Rca Inc. | Angle mount header |
JP2539878B2 (ja) * | 1988-02-12 | 1996-10-02 | 三菱電機株式会社 | レ―ザプリンタ用半導体レ―ザ装置の駆動方法 |
US5208467A (en) * | 1988-07-28 | 1993-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a film-covered packaged component |
JPH0322543A (ja) * | 1989-06-05 | 1991-01-30 | Siemens Ag | 電子デバイスの被覆方法及び装置 |
JPH0834337B2 (ja) * | 1990-04-02 | 1996-03-29 | シャープ株式会社 | 半導体レーザ素子の製造方法 |
US5413956A (en) * | 1992-03-04 | 1995-05-09 | Sharp Kabushiki Kaisha | Method for producing a semiconductor laser device |
DE69204828T2 (de) * | 1992-06-09 | 1996-05-02 | Ibm | Herstellung von Laserdioden mit durch Spaltung erzeugten Stirnflächen auf einem vollständigen Wafer. |
DE4315580A1 (de) * | 1993-05-11 | 1994-11-17 | Fraunhofer Ges Forschung | Anordnung aus Laserdioden und einem Kühlsystem sowie Verfahren zu deren Herstellung |
DE4410212A1 (de) * | 1994-03-24 | 1995-09-28 | Telefunken Microelectron | Elektronische Baugruppe |
-
1995
- 1995-09-29 DE DE19536434A patent/DE19536434C2/de not_active Expired - Fee Related
-
1996
- 1996-09-04 EP EP96114169A patent/EP0766355A1/de not_active Withdrawn
- 1996-09-18 TW TW085111388A patent/TW434918B/zh not_active IP Right Cessation
- 1996-09-24 KR KR1019960041828A patent/KR100437705B1/ko not_active IP Right Cessation
- 1996-09-27 JP JP08277258A patent/JP3108371B2/ja not_active Expired - Fee Related
- 1996-09-30 US US08/723,831 patent/US5943553A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE19536434A1 (de) | 1997-04-03 |
EP0766355A1 (de) | 1997-04-02 |
TW434918B (en) | 2001-05-16 |
KR100437705B1 (ko) | 2004-08-02 |
US5943553A (en) | 1999-08-24 |
JP3108371B2 (ja) | 2000-11-13 |
DE19536434C2 (de) | 2001-11-15 |
JPH09129973A (ja) | 1997-05-16 |
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