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KR970018877A - 반도체 레이저 부품의 제조 방법 - Google Patents

반도체 레이저 부품의 제조 방법 Download PDF

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Publication number
KR970018877A
KR970018877A KR1019960041828A KR19960041828A KR970018877A KR 970018877 A KR970018877 A KR 970018877A KR 1019960041828 A KR1019960041828 A KR 1019960041828A KR 19960041828 A KR19960041828 A KR 19960041828A KR 970018877 A KR970018877 A KR 970018877A
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support plate
semiconductor body
manufacturing
semiconductor
semiconductor laser
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KR1019960041828A
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KR100437705B1 (ko
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베르너 슈페트
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로더리히 네테부쉬 ; 롤프 옴케
지멘스 악티엔게젤샤프트
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8582Means for heat extraction or cooling characterised by their shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02375Positioning of the laser chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8581Means for heat extraction or cooling characterised by their material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0237Fixing laser chips on mounts by soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

반도체 레이저 부품(s)을 제조하기 위한 본 발명에 따른 방법에서는, 반도체 몸체(1)가 지지체 플레이트(3) 상에 고정된다. 지지체 플레이트(3)는 반도체 몸체(1)의 재료와 동일한 열 팽창 계수를 갖는 재료로 이루어진다. 반도체 몸체(1)는 전기 전도성 및 열 전도성 재료로 이루어진 결합층(4)에 의해 지지체 플레이트(3) 상에 고정된다. 그리고 나서, 반도체 몸체(1) 상에 커버링층, 예컨대 미러층(12, 13)이 제공된다. 이러한 순서의 방법은 반도체 몸체(1)의 접촉면 재료로 오염되지 않는다는 장점을 갖는다.

Description

반도체 레이저 부품의 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 방법에 따라 제조된 반도체 부품의 개략도.

Claims (11)

  1. 적어도 표면의 부분 영역 상에 커버링층(12, 13)을 포함하는 반도체 몸체(1)를 지지체 플레이트(3) 상에 고정시키는, 반도체 레이저 부품의 제조 방법에 있어서, 반도체 몸체(1)의 고정 후에 커버링층(12, 13)을 지지체 플레이트(3) 상에 제공하는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
  2. 제1항에 있어서, 지지체 플레이트(3)가 양호한 열 전도성 및 양호한 전기 전도성을 갖는 재료로 이루어지는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
  3. 제1항 또는 2항에 있어서, 지지체 플레이트(3)가 반도체 몸체(1)의 반도체 재료와 유사한 열 팽창 계수를 갖는 재료로 이루어지는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
  4. 제1항 내지 3항 중 어느 한 항에 있어서, 반도체 몸체(1)의 적어도 한 측면(10, 11)이 지지체 플레이트(3)의 한 측면(14, 15)과 동일한 평면에서 끝나도록, 반도체 몸체(1)가 지지체 플레이트(3) 상에 위치 설정되는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
  5. 제1항 내지 4항 중 어느 한 항에 있어서, 지지체 플레이트(3)가 Mo로 이루어지는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
  6. 제1항 내지 5중 중 어느 한 항에 있어서, 지지체 플레이트(3)상에 반도체 몸체(1)를 고정시키기 위해, 경질 땝납(4)이 사용되는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
  7. 제1항 내지 6항 중 어느 한 항에 있어서, 커버링층(12, 13)이 미러층이고, 2개의 마주 놓인 측면(10, 11)에서 반도체 몸체(1) 상에 제공되는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
  8. 제7항에 있어서, 적어도 반도체 몸체(1)로부터 레이저 빔(17)이 배출되는 반도체 몸체(1)의 측면(10 또는 11)이 지지체 플레이트(3)의 측면(14, 15)과 동일한 평면에서 끝나도록, 반도체 몸체(1)가 지지체 플레이트(3)상에 위치 설정되는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
  9. 제1항 또는 8항 중 어느 한 항에 있어서, 지지체 플레이트(3) 상부면(18)의 폭의 반도체 몸체(1)의 2개의 마주놓인 측면(10, 11)의 간격에 대략 상응하도록 설정되는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
  10. 제1항 내지 9항 중 어느 한 항에 있어서, 지지체 플레이트(3)의 적어도 한 측면(14, 15)이 경사진 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
  11. 제1항 내지 10항 중 어느 한 항에 있어서, 지지체 플레이트(3)의 측면(14, 15)중 적어도 하나의 적어도 일부상에 미러층(12, 13)의 적어도 일부가 제공되는 것을 특징으로 하는 반도체 레이저 부품의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960041828A 1995-09-29 1996-09-24 반도체레이저부품의제조방법 KR100437705B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19536434A DE19536434C2 (de) 1995-09-29 1995-09-29 Verfahren zum Herstellen eines Halbleiterlaser-Bauelements
DE19536434.1 1995-09-29

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KR970018877A true KR970018877A (ko) 1997-04-30
KR100437705B1 KR100437705B1 (ko) 2004-08-02

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US (1) US5943553A (ko)
EP (1) EP0766355A1 (ko)
JP (1) JP3108371B2 (ko)
KR (1) KR100437705B1 (ko)
DE (1) DE19536434C2 (ko)
TW (1) TW434918B (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19611046A1 (de) * 1996-03-20 1997-09-25 Siemens Ag Halbleitervorrichtung
DE19730118B4 (de) 1997-07-14 2006-01-12 Infineon Technologies Ag Verfahren und Vorrichtung zur Herstellung einer Chip-Substrat-Verbindung
DE19746835A1 (de) * 1997-10-23 1999-05-06 Jenoptik Jena Gmbh Verfahren zum Montieren einer einseitig mit einer HR-Schicht beschichteten Laserkristallscheibe auf einen Kühlkörper und verfahrensgemäß hergestellte Schichtanordnung
US6355505B1 (en) * 1998-04-08 2002-03-12 Fuji Photo Film Co., Ltd. Heat sink and method of manufacturing heat sink
US20010042866A1 (en) 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6674775B1 (en) 2000-02-18 2004-01-06 Jds Uniphase Corporation Contact structure for semiconductor lasers
US8028531B2 (en) * 2004-03-01 2011-10-04 GlobalFoundries, Inc. Mitigating heat in an integrated circuit
TWI303115B (en) 2006-04-13 2008-11-11 Epistar Corp Semiconductor light emitting device
TWM540949U (zh) * 2016-12-07 2017-05-01 全球傳動科技股份有限公司 直線傳動模組
JP6939120B2 (ja) * 2017-06-19 2021-09-22 住友電気工業株式会社 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法
JP6939119B2 (ja) * 2017-06-19 2021-09-22 住友電気工業株式会社 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法
JP6911567B2 (ja) 2017-06-22 2021-07-28 住友電気工業株式会社 量子カスケード半導体レーザ
US10608412B2 (en) * 2017-06-19 2020-03-31 Sumitomo Electric Industries, Ltd. Quantum cascade laser, light emitting apparatus
US10476235B2 (en) * 2017-06-22 2019-11-12 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US10476237B2 (en) * 2017-06-22 2019-11-12 Sumitomo Electric Industries, Ltd. Quantum cascade laser
US10404038B2 (en) * 2017-06-22 2019-09-03 Sumitomo Electric Industries, Ltd. Quantum cascade laser
EP3633805A1 (en) * 2018-10-01 2020-04-08 Universität Stuttgart Method and apparatus for producing a radiation field amplifying system
DE102020132133A1 (de) 2020-12-03 2022-06-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes laserbauteil und verfahren zur herstellung eines strahlungsemittierenden laserbauteils

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3614550A (en) * 1969-01-09 1971-10-19 Ibm A semiconductor laser device with improved operating efficiency
US3691476A (en) * 1970-12-31 1972-09-12 Bell Telephone Labor Inc Double heterostructure laser diodes
US3946334A (en) * 1973-11-14 1976-03-23 Nippon Electric Company, Limited Injection semiconductor laser device
CA1049127A (en) * 1974-03-05 1979-02-20 Kunio Itoh Semiconductor devices with improved heat radiation and current concentration
FR2273438A1 (en) * 1974-05-29 1975-12-26 Radiotechnique Compelec Fabrication of discrete light-emitting diodes - using thin absorbing layer deposited on lateral faces after separation
US4032963A (en) * 1974-09-03 1977-06-28 Motorola, Inc. Package and method for a semiconductor radiant energy emitting device
US4178564A (en) * 1976-01-15 1979-12-11 Rca Corporation Half wave protection layers on injection lasers
US4210878A (en) * 1976-01-20 1980-07-01 Nippon Electric Co., Ltd. Semiconductor laser element having a unitary film on a laser crystal and a heat sink thereof
US4064621A (en) * 1976-09-16 1977-12-27 General Motors Corporation Cadmium diffused Pb1-x Snx Te diode laser
JPS5837713B2 (ja) * 1978-12-01 1983-08-18 富士通株式会社 半導体レ−ザ−装置の製造方法
US4257156A (en) * 1979-03-09 1981-03-24 General Electric Company Method for thermo-compression diffusion bonding each side of a substrateless semiconductor device wafer to respective structured copper strain buffers
JPS55156343A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Manufacture of semiconductor device
JPS5891692A (ja) * 1981-11-27 1983-05-31 Hitachi Ltd 半導体レ−ザ装置
JPS612371A (ja) * 1984-06-14 1986-01-08 Mitsubishi Electric Corp 半導体受光装置
JPS63181491A (ja) * 1987-01-23 1988-07-26 Matsushita Electric Ind Co Ltd ヒ−トシンク
NL8700904A (nl) * 1987-04-16 1988-11-16 Philips Nv Halfgeleiderlaserinrichting en werkwijze voor het vervaardigen daarvan.
JPS63318188A (ja) * 1987-06-19 1988-12-27 Sharp Corp 半導体レ−ザアレイ装置
US4769684A (en) * 1987-07-07 1988-09-06 Rca Inc. Angle mount header
JP2539878B2 (ja) * 1988-02-12 1996-10-02 三菱電機株式会社 レ―ザプリンタ用半導体レ―ザ装置の駆動方法
US5208467A (en) * 1988-07-28 1993-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a film-covered packaged component
JPH0322543A (ja) * 1989-06-05 1991-01-30 Siemens Ag 電子デバイスの被覆方法及び装置
JPH0834337B2 (ja) * 1990-04-02 1996-03-29 シャープ株式会社 半導体レーザ素子の製造方法
US5413956A (en) * 1992-03-04 1995-05-09 Sharp Kabushiki Kaisha Method for producing a semiconductor laser device
DE69204828T2 (de) * 1992-06-09 1996-05-02 Ibm Herstellung von Laserdioden mit durch Spaltung erzeugten Stirnflächen auf einem vollständigen Wafer.
DE4315580A1 (de) * 1993-05-11 1994-11-17 Fraunhofer Ges Forschung Anordnung aus Laserdioden und einem Kühlsystem sowie Verfahren zu deren Herstellung
DE4410212A1 (de) * 1994-03-24 1995-09-28 Telefunken Microelectron Elektronische Baugruppe

Also Published As

Publication number Publication date
DE19536434A1 (de) 1997-04-03
EP0766355A1 (de) 1997-04-02
TW434918B (en) 2001-05-16
KR100437705B1 (ko) 2004-08-02
US5943553A (en) 1999-08-24
JP3108371B2 (ja) 2000-11-13
DE19536434C2 (de) 2001-11-15
JPH09129973A (ja) 1997-05-16

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