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KR960702676A - 갈륨비소기판상의 박막커패시터 및 이의 제조 방법(thin film capaciors on gallium arsenide substrate and process for making the same) - Google Patents

갈륨비소기판상의 박막커패시터 및 이의 제조 방법(thin film capaciors on gallium arsenide substrate and process for making the same)

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Publication number
KR960702676A
KR960702676A KR1019950705147A KR19950705147A KR960702676A KR 960702676 A KR960702676 A KR 960702676A KR 1019950705147 A KR1019950705147 A KR 1019950705147A KR 19950705147 A KR19950705147 A KR 19950705147A KR 960702676 A KR960702676 A KR 960702676A
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electrode
making
layer
barrier layer
strontium titanate
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KR1019950705147A
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KR100345014B1 (ko
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마사미치 아주마
카로스 에이. 파즈 데 아라조
마이클 씨. 스코트
토시유키 우에다
Original Assignee
그레이 에프, 더벤윅
심메트릭스 코포레이션
원본미기재
마쓰시타 일렉트로닉스 코포레이션
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Priority claimed from US08/214,401 external-priority patent/US5620739A/en
Priority claimed from US08/280,601 external-priority patent/US5612082A/en
Application filed by 그레이 에프, 더벤윅, 심메트릭스 코포레이션, 원본미기재, 마쓰시타 일렉트로닉스 코포레이션 filed Critical 그레이 에프, 더벤윅
Publication of KR960702676A publication Critical patent/KR960702676A/ko
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Publication of KR100345014B1 publication Critical patent/KR100345014B1/ko

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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

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Abstract

차후 가열단계에서 기판이 증발하는 것을 방지하기 위해 갈륨 B1소기판(11)상에 셀리콘나이트라이드 장벽층(12)이 증착된다. 이산화실리콘 응력감소층(14) 이 장벽층상에 증착된다. 본질적으로 무수인 알콕시카르복시레이트 액재프래커스가 준비된다. 사용 바로전에 용제교환단계가 수행되고, 그리고나서 프레커스는 제1전극상에 스핀-온되고, 400℃에서 건조되고, 그리고 600℃와 850℃ 사이에서 어닐되어 BST 커패시터(22)를 형성한다. 제2전극(24)이 어닐된 유전체위에 증착된다.

Description

갈륨비소기판상의 박막커패시터 및 이의 제조 방법(THIN FILM CAPACIORS ON GALLIUM ARSENIDE SUBSTRATE AND PROCESS FOR MAKING THE SAME)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 집적회로커패시터의 단면도.
제2도는 본 발명 공정에 따라 제조되고 서로 다른 세온도에서 어닐된 BST 커패시터에 대한 용량(F)대 주파수(GHZ)의 도표.

Claims (10)

  1. 갈륨비소기판(11)을 제공하는 단계; 상기 기관상에 장벽층(12)을 만드는 단계; 제1전극(16)을 만드는 단계; 상기 제1전극상에 유전재료(22)를 만드는 단계; 및 상기 유전재료상에 제2전극(24)을 만드는 단계를 포함하는 고용량 박막커패시터소자를 만드는 방법에 있어서, 유전재료를 만드는 단계는; 액체 프레커스 처리시 고형 유전쳬 바륨 스트론튬 타이타네이트를 만들기 위한 유효한 량으로 바륨, 스트론늄, 및 타이타늄 분량을 포함하는 용액을 포함하는 액체 프레커스를 제공하는 단계; 상기 제1전극(16)상에 상기 액체프레커스를 도포하는 단계; 및 바륨 스트론튬 타이타네이트(22)를 포함하는 상기 유전재료를 반들기 위해 상기 제1전극상의 액체프레커스를 처리하는 단계를 포함하는 것이 특징인 갈륨비소상의 박막커패시터 제조방법.
  2. 제1항에 있어서, 액체프레커스를 제공하는 단계는 바륨, 스트론튬, 및 타이타늄 분량을 포함하는 용액을 제공하고 그후 제2용제를 포함하는 액체프레커스를 제공하기 위해 용재교환단계를 수행하는 단계를 포함하는것이 특징인 방법.
  3. 제1항에 있어서, 액체프레커스는 금속 알콕시카르복시레이트를 포함하는 것이 특징인 방법.
  4. 제1항에 있어서, 장벽층(12)을 만드는 단계와 제1전극(16)을 만드는 단계 사이에 응력감소층(14)을 만드는 단계가 특징인 방법.
  5. 제4항에 있어서, 상기 응력감소층(14)은 약 1000Å 두께의 이산화실리콘을 포함하고, 상기 장벽층(12)은 약 1500Å 두께의 Si3N4를 포함하는 것이 특징인 방법.
  6. 제1항에 있어서, 상기 처리단계는 상기 전극(16)상의 상기 프레커스를 200℃ 내지 500℃의 온도까지 가열하는 단계를 포함하고, 상기 처리단계는 상기 전극상의 상기 프레커스를 600℃와 800℃ 사이의 온도에서 어닐링시키는 단계를 포함하는 것이 특징인 방법.
  7. 제1항에 있어서, 상기 처리단계는 1분과 90분 사이의 시간동안 상기 바륨 스트론튬 타이타네이트(22)의 제1어닐 및 1분과 90분 사이의 시간동안 상기 바륨 스트론튬 타이타네이트의 제2어닐을 포함하는 것이 특징인 방법.
  8. 제1항에 있어서, 상기 바륨스트론튬타 이타네이트(22)는 화학식 Ba0·7Sr0·3TiO3을 가지는 것이 특징인 방법.
  9. 제1항에 있어서, 제1전극(16)을 만드는 단계는; 타이타늄, 탄탈륨, 니켈, 탄탈륨실리사이드, 니켈실리사이드, 및 팔라듐으로 구성된 그륩으로부터 선택된 접착층(18)을 만드는 단계; 및 제2층(20)을 만드는 단계를 포함하는 것이 특징인 방법.
  10. 갈륨비소기판(11); 상기 기판상의 장벽층(12); 상기 장벽층상의 응력감소층(14); 및 상기 응력감소층상의 커패시터(10)를 포함하되, 커패시터는 제1전극(16), 제2전극(24), 및 상기 전극 사이의 유전재료(22) 포함하고, 상기 방법은 상기 유전재료가 바륨스트론튬 타이타네이트인 것을 특징으로 하는 갈륨비소기판상의 박막커패시터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950705147A 1994-03-17 1995-03-16 갈륨비소 기판의 박막 커패시터와 그 제조 방법 KR100345014B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US08/214,401 1994-03-17
US08/214401 1994-03-17
US08/214,401 US5620739A (en) 1991-02-25 1994-03-17 Thin film capacitors on gallium arsenide substrate and process for making the same
US08/280,601 US5612082A (en) 1991-12-13 1994-07-26 Process for making metal oxides
US08/280,601 1994-07-26
US08/280601 1994-07-26
PCT/US1995/003254 WO1995025340A1 (en) 1994-03-17 1995-03-16 Thin film capacitors on gallium arsenide substrate and process for making the same

Publications (2)

Publication Number Publication Date
KR960702676A true KR960702676A (ko) 1996-04-27
KR100345014B1 KR100345014B1 (ko) 2002-11-30

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EP (1) EP0699343B1 (ko)
JP (2) JPH09501019A (ko)
KR (1) KR100345014B1 (ko)
CA (1) CA2163130C (ko)
DE (1) DE69522628T2 (ko)
WO (1) WO1995025340A1 (ko)

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JP3188179B2 (ja) * 1995-09-26 2001-07-16 シャープ株式会社 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
GB2338962B (en) * 1996-06-19 2000-11-29 Nec Corp Thin film formation method
US6319764B1 (en) 1999-08-25 2001-11-20 Micron Technology, Inc. Method of forming haze-free BST films
CN104425440B (zh) * 2013-08-27 2017-09-08 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其形成方法
US20160293334A1 (en) * 2015-03-31 2016-10-06 Tdk Corporation Thin film capacitor

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US5217754A (en) * 1987-07-27 1993-06-08 Trustees Of The University Of Pennsylvania Organometallic precursors in conjunction with rapid thermal annealing for synthesis of thin film ceramics
NL9000602A (nl) * 1990-03-16 1991-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met geheugenelementen vormende condensatoren met een ferroelectrisch dielectricum.
US5423285A (en) * 1991-02-25 1995-06-13 Olympus Optical Co., Ltd. Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications
ATE201938T1 (de) * 1991-12-13 2001-06-15 Symetrix Corp Verwendung von schichtigem übergitter material
JP3254715B2 (ja) * 1992-03-17 2002-02-12 松下電器産業株式会社 半導体装置の製造方法

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JPH09501019A (ja) 1997-01-28
EP0699343A1 (en) 1996-03-06
KR100345014B1 (ko) 2002-11-30
DE69522628D1 (de) 2001-10-18
WO1995025340A1 (en) 1995-09-21
DE69522628T2 (de) 2002-04-18
JP2007184622A (ja) 2007-07-19
EP0699343B1 (en) 2001-09-12
CA2163130A1 (en) 1995-09-21
CA2163130C (en) 2005-05-24

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