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GB2338962B - Thin film formation method - Google Patents

Thin film formation method

Info

Publication number
GB2338962B
GB2338962B GB9922376A GB9922376A GB2338962B GB 2338962 B GB2338962 B GB 2338962B GB 9922376 A GB9922376 A GB 9922376A GB 9922376 A GB9922376 A GB 9922376A GB 2338962 B GB2338962 B GB 2338962B
Authority
GB
United Kingdom
Prior art keywords
thin film
film formation
formation method
thin
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9922376A
Other versions
GB2338962A (en
GB9922376D0 (en
Inventor
Takeo Matsuki
Yoshihiro Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8158562A external-priority patent/JP3022328B2/en
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB9922376D0 publication Critical patent/GB9922376D0/en
Publication of GB2338962A publication Critical patent/GB2338962A/en
Application granted granted Critical
Publication of GB2338962B publication Critical patent/GB2338962B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Thermal Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9922376A 1996-06-19 1997-06-17 Thin film formation method Expired - Lifetime GB2338962B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8158562A JP3022328B2 (en) 1996-06-19 1996-06-19 Thin film formation method
GB9712759A GB2314348B (en) 1996-06-19 1997-06-17 Thin film formation method

Publications (3)

Publication Number Publication Date
GB9922376D0 GB9922376D0 (en) 1999-11-24
GB2338962A GB2338962A (en) 2000-01-12
GB2338962B true GB2338962B (en) 2000-11-29

Family

ID=26311736

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9922376A Expired - Lifetime GB2338962B (en) 1996-06-19 1997-06-17 Thin film formation method

Country Status (1)

Country Link
GB (1) GB2338962B (en)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4222814A (en) * 1978-01-26 1980-09-16 Sotek Corporation Method for forming a crystalline film for a paramagnetic sodium thallium type intermetallic compound
JPS61108121A (en) * 1984-11-01 1986-05-26 Sharp Corp Manufacture of semiconductor device
GB2213839A (en) * 1987-12-23 1989-08-23 Plessey Co Plc Production of orientated polycrystalline y1ba2cu3o7-8 thin film by deposition onto textured, polycrystalline surfaces
EP0495994A1 (en) * 1990-08-07 1992-07-29 Seiko Epson Corporation Semiconductor device and its manufacturing method
US5344796A (en) * 1992-10-19 1994-09-06 Samsung Electronics Co., Ltd. Method for making polycrystalline silicon thin film
JPH0786602A (en) * 1993-09-10 1995-03-31 Fujitsu Ltd Method of manufacturing thin film transistor
WO1995025340A1 (en) * 1994-03-17 1995-09-21 Symetrix Corporation Thin film capacitors on gallium arsenide substrate and process for making the same
WO1996029727A1 (en) * 1995-03-21 1996-09-26 Symetrix Corporation Low temperature process for fabricating layered superlattice materials and making electronic devices including same
WO1996029726A1 (en) * 1995-03-17 1996-09-26 Symetrix Corporation Uv radiation process for making electronic devices having low-leakage-current and low-polarization fatigue
EP0755070A2 (en) * 1995-06-22 1997-01-22 Matsushita Electronics Corporation A semiconductor device and its manufacturing method
EP0890980A2 (en) * 1994-07-11 1999-01-13 Symetrix Corporation Method of making integrated circuit capacitors

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4222814A (en) * 1978-01-26 1980-09-16 Sotek Corporation Method for forming a crystalline film for a paramagnetic sodium thallium type intermetallic compound
JPS61108121A (en) * 1984-11-01 1986-05-26 Sharp Corp Manufacture of semiconductor device
GB2213839A (en) * 1987-12-23 1989-08-23 Plessey Co Plc Production of orientated polycrystalline y1ba2cu3o7-8 thin film by deposition onto textured, polycrystalline surfaces
EP0495994A1 (en) * 1990-08-07 1992-07-29 Seiko Epson Corporation Semiconductor device and its manufacturing method
US5344796A (en) * 1992-10-19 1994-09-06 Samsung Electronics Co., Ltd. Method for making polycrystalline silicon thin film
JPH0786602A (en) * 1993-09-10 1995-03-31 Fujitsu Ltd Method of manufacturing thin film transistor
WO1995025340A1 (en) * 1994-03-17 1995-09-21 Symetrix Corporation Thin film capacitors on gallium arsenide substrate and process for making the same
EP0890980A2 (en) * 1994-07-11 1999-01-13 Symetrix Corporation Method of making integrated circuit capacitors
WO1996029726A1 (en) * 1995-03-17 1996-09-26 Symetrix Corporation Uv radiation process for making electronic devices having low-leakage-current and low-polarization fatigue
WO1996029727A1 (en) * 1995-03-21 1996-09-26 Symetrix Corporation Low temperature process for fabricating layered superlattice materials and making electronic devices including same
EP0755070A2 (en) * 1995-06-22 1997-01-22 Matsushita Electronics Corporation A semiconductor device and its manufacturing method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Japio Abstract of JP 61 108 121 A *
WPI Accession no 95-165443 & JP 07 086 602 A *

Also Published As

Publication number Publication date
GB2338962A (en) 2000-01-12
GB9922376D0 (en) 1999-11-24

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20100624 AND 20100630

PE20 Patent expired after termination of 20 years

Expiry date: 20170616