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KR960702540A - 개선된 연마용 조성물 및 연마방법(Improved compositions and methods for polishing) - Google Patents

개선된 연마용 조성물 및 연마방법(Improved compositions and methods for polishing)

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Publication number
KR960702540A
KR960702540A KR1019950705240A KR19950705240A KR960702540A KR 960702540 A KR960702540 A KR 960702540A KR 1019950705240 A KR1019950705240 A KR 1019950705240A KR 19950705240 A KR19950705240 A KR 19950705240A KR 960702540 A KR960702540 A KR 960702540A
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KR
South Korea
Prior art keywords
silica
polishing
composition
metal
integrated circuit
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KR1019950705240A
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English (en)
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KR100222768B1 (ko
Inventor
브랜캘레오니 그레고리
멜번 쿡 리
Original Assignee
윌리엄 디. 부딩거
로델, 인코포레이티드
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Application filed by 윌리엄 디. 부딩거, 로델, 인코포레이티드 filed Critical 윌리엄 디. 부딩거
Publication of KR960702540A publication Critical patent/KR960702540A/ko
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Publication of KR100222768B1 publication Critical patent/KR100222768B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S451/00—Abrading
    • Y10S451/905—Metal lap

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Disintegrating Or Milling (AREA)

Abstract

수성 매질, 연마입자, 산화제와 실리카 제거속도를 억제하는 음이온을 포함하는, 금속과 실리카와의 복합체를 갖는 규고, 실리카 또는 규소 함유 제품을 연마하기 위한 개선된 조성물이 제공된다. 당해 음이온은 둘이상의 산 그룹을 함유하며 제1의 해리가능한 산의 pKa 값이 실제로 연마용 조성물의 pH보다 크지 않은 화합물계로부텅 유도된다. 당해 조성물을 사용하여 제품의 표면을 연마하거나 평면화하는 방법 및 이러한 방법에 의해 제조된 제품이 또한 제공된다.

Description

개선된 연마용 조성물 및 연마방법(Improved compositions and methods for polishing)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (24)

  1. 수성 매질, 연마 입자, 산화제 및 둘 이상의 산 그룹을 함유하며 제1의 해리가능한 산의 pka 값이 광택용 조성물의 pH 보다 그다지 크지 않으며 실리카 제거속도를 억제하는 화합물 또는 화합물들을 포함하는, 금속과 실리카와의 복합체 연마용 조성물.
  2. 제1항에 있어서, 실리카 제거속도를 억제하는 화합물 또는 화합물들이 벤젠 환을 함유하는 조성물.
  3. 제1항에 있어서, 실리카 제거속도를 억제하는 화합물 또는 화합물들이 카복실레이트 그룹에 대해 α 위치에서 2급 하이드록실 그룹을 갖는 직쇄형 모노카복실산, 디카복실산 및 염인 조성물.
  4. 제1항에 있어서, 실리카 제거속도를 억제하는 화합물 또는 화합물들이 카복실레이트 그룹에 대해 α 위치에서 2급 또는 3급 하이드록실 그룹을 갖는 트리카복실산 또는 폴리카복실산 및 염인 조성물.
  5. 제2항에 있어서, 필수적으로 물, 연마 입자, 과산화수소 및 프탈산수소칼륨(여기서, 프탈레이트 성분의 용액 농도는 0.1m이 이상이다)으로 이루어진 조성물.
  6. 제5항에 있어서, 필수적으로 물 3.2중량부, 연마입자 0.33중량부, 과산화수소 1.5중량부 및 프탈산수소칼륨 0.22중량부로 이루어진 조성물.
  7. 제1항에 따르는 연마용 조성물을 사용하여 한 성분이 규소, 실리카 또는 규산염인 복합체를 연마하는 방법.
  8. 제2항에 따르는 연마용 조성물을 사용하여 한 성분이 규소, 실리카 또는 규산염인 복합체를 연마하는 방법.
  9. 제3항에 따르는 연마용 조성물을 사용하여 한 성분이 규소, 실리카 또는 규산염인 복합체를 연마하는 방법.
  10. 제4항에 따르는 연마용 조성물을 사용하여 한 성분이 규소, 실리카 또는 규산염인 복합체를 연마하는 방법.
  11. 제5항에 따르는 연마용 조성물을 사용하여 한 성분이 규소, 실리카 또는 규산염인 복합체를 연마하는 방법.
  12. 제6항에 따르는 연마용 조성물을 사용하여 한 성분이 규소, 실리카 또는 규산염인 복합체를 연마하는 방법.
  13. 제1항에 따르는 조성물을 사용하여 표면이 금속 및 실리카로 이루어진 집적회로를 연마하는 방법.
  14. 제2항에 따르는 조성물을 사용하여 표면이 금속 및 실리카로 이루어진 집적회로를 연마하는 방법.
  15. 제3항에 따르는 조성물을 사용하여 표면이 금속 및 실리카로 이루어진 집적회로를 연마하는 방법.
  16. 제4항에 따르는 조성물을 사용하여 표면이 금속 및 실리카로 이루어진 집적회로를 연마하는 방법.
  17. 제5항에 따르는 조성물을 사용하여 표면이 금속 및 실리카로 이루어진 집적회로를 연마하는 방법.
  18. 제6항에 따르는 조성물을 사용하여 표면이 금속 및 실리카로 이루어진 집적회로를 연마하는 방법.
  19. 제1항의 조성물이 연마제로서 사용되는, 표면이 금속 및 실리카로 이루어진 집적회로.
  20. 제2항의 조성물이 연마제로서 사용되는, 표면이 금속 및 실리카로 이루어진 집적회로.
  21. 제3항의 조성물이 연마제로서 사용되는, 표면이 금속 및 실리카로 이루어진 집적회로.
  22. 제4항의 조성물이 연마제로서 사용되는, 표면이 금속 및 실리카로 이루어진 집적회로.
  23. 제5항의 조성물이 연마제로서 사용되는, 표면이 금속 및 실리카로 이루어진 집적회로.
  24. 제6항의 조성물이 연마제로서 사용되는, 표면이 금속 및 실리카로 이루어진 집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950705240A 1993-05-26 1994-05-25 개선된 연마용 조성물 KR100222768B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8/067234 1993-05-26
US08/067,234 1993-05-26
US08/067,234 US5391258A (en) 1993-05-26 1993-05-26 Compositions and methods for polishing
PCT/US1994/006091 WO1994028194A1 (en) 1993-05-26 1994-05-25 Improved compositions and methods for polishing

Publications (2)

Publication Number Publication Date
KR960702540A true KR960702540A (ko) 1996-04-27
KR100222768B1 KR100222768B1 (ko) 1999-10-01

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ID=22074607

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Application Number Title Priority Date Filing Date
KR1019950705240A KR100222768B1 (ko) 1993-05-26 1994-05-25 개선된 연마용 조성물

Country Status (11)

Country Link
US (2) US5391258A (ko)
EP (1) EP0706582B9 (ko)
JP (1) JP2819196B2 (ko)
KR (1) KR100222768B1 (ko)
CN (1) CN1053933C (ko)
AT (1) ATE200916T1 (ko)
DE (2) DE706582T1 (ko)
MY (1) MY110381A (ko)
SG (1) SG48220A1 (ko)
TW (1) TW329434B (ko)
WO (1) WO1994028194A1 (ko)

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SG48220A1 (en) 1998-04-17
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CN1053933C (zh) 2000-06-28
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US5391258A (en) 1995-02-21

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