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KR950004390A - Pattern formation method of semiconductor device - Google Patents

Pattern formation method of semiconductor device Download PDF

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Publication number
KR950004390A
KR950004390A KR1019930012956A KR930012956A KR950004390A KR 950004390 A KR950004390 A KR 950004390A KR 1019930012956 A KR1019930012956 A KR 1019930012956A KR 930012956 A KR930012956 A KR 930012956A KR 950004390 A KR950004390 A KR 950004390A
Authority
KR
South Korea
Prior art keywords
photoresist
pattern
semiconductor device
formation method
pattern formation
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Application number
KR1019930012956A
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Korean (ko)
Other versions
KR960000181B1 (en
Inventor
배상만
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930012956A priority Critical patent/KR960000181B1/en
Publication of KR950004390A publication Critical patent/KR950004390A/en
Application granted granted Critical
Publication of KR960000181B1 publication Critical patent/KR960000181B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

본 발명은 패턴을 형성 하고자하는 패턴 형성 물질상에 포토레지스트를 도포하여 마스크로 노광을 실시하는 반도체 소자의 패턴 형성 방법에 있어서, 상기 포토레지스트의 표면에 거칠기를 주어 정재파의 효과를 방지하는 단계를 더 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 패턴 형성 방법에 관한 것이다.The present invention provides a pattern forming method of a semiconductor device in which a photoresist is applied on a pattern forming material to be patterned and exposed using a mask. It also relates to a pattern forming method of a semiconductor device, characterized in that it further comprises.

따라서 본 발명은 패턴 형성시 웨이퍼 기판의 단차가 심한 곳에서 생기는 포토레지스트 패턴의 손실(notching)을 감소시키기 위한 공정에도 적용할 수 있고, 공정마진을 얻을 수 있는 효과가 있다.Therefore, the present invention can also be applied to a process for reducing the notching of the photoresist pattern generated at the stepped portion of the wafer substrate when the pattern is formed, thereby obtaining a process margin.

Description

반도체 소자의 패턴 형성 방법Pattern formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 3 도는 본 발명에 따른 종래의 포토 마스크작업 공정 흐름도.3 is a flowchart of a conventional photo masking process according to the present invention.

Claims (3)

패턴을 형성 하고자하는 패턴 형성 물질상에 포토레지스트를 도포하여 마스크를 노광을 실시하는 반도체 소자의 패턴 형성 방법에 있어서, 상기 포토레지스트의 표면에 거칠기를 주어 정제파의 효과를 방지하는 단계를 더 포함하여 이루어지는것을 특징으로 하는 반도체 소자의 패턴 형성 방법.A pattern forming method of a semiconductor device for exposing a mask by applying a photoresist on a pattern forming material to form a pattern, the method comprising: providing a roughness on the surface of the photoresist to prevent the effect of a refinement wave The pattern formation method of the semiconductor element characterized by the above-mentioned. 제1항에 있어서, 포토레지스트의 상층부 경계면을 얇게 조광시킨후 습식현상하여 포토레지스트 경계면을 거칠게하는 것을특징으로 하는 반도체 소자의 패턴 형성 방법.The method of forming a pattern of a semiconductor device according to claim 1, wherein the upper surface of the photoresist is thinly lightened and then wet developed to roughen the photoresist. 제1항에 있어서, 포토레지스트의 상층부 경계면을 산소 가스를 이용하여 건식 현상하여 포토레지스트 경계면을 거칠게하는 것을 특징으로 하는 반도체 소자의 패턴 형성 방법.The method of forming a pattern of a semiconductor device according to claim 1, wherein the upper boundary layer of the photoresist is dry developed using oxygen gas to roughen the photoresist interface. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930012956A 1993-07-09 1993-07-09 Pattern forming method of semiconductor device KR960000181B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930012956A KR960000181B1 (en) 1993-07-09 1993-07-09 Pattern forming method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930012956A KR960000181B1 (en) 1993-07-09 1993-07-09 Pattern forming method of semiconductor device

Publications (2)

Publication Number Publication Date
KR950004390A true KR950004390A (en) 1995-02-18
KR960000181B1 KR960000181B1 (en) 1996-01-03

Family

ID=19359048

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930012956A KR960000181B1 (en) 1993-07-09 1993-07-09 Pattern forming method of semiconductor device

Country Status (1)

Country Link
KR (1) KR960000181B1 (en)

Also Published As

Publication number Publication date
KR960000181B1 (en) 1996-01-03

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