KR950025913A

KR950025913A - Micro pattern formation method of semiconductor device

Info

Publication number: KR950025913A
Application number: KR1019940001954A
Authority: KR
Inventors: 함영목
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1994-02-03
Filing date: 1994-02-03
Publication date: 1995-09-18

Abstract

본 발명은 반도체소자의 미세패턴 형성방법에 관한 것으로, 공지의 기술로 게이트산화막을 갖는 필드산화막을 형성하고 그 상부에 상기 필드산화막이 노출되도록 오픈마스크를 형성한 후, 상기 필드산화막이 소자분리 역할을 할 수 있는 한도내에서 필드산화막을 습식방법으로 식각하여 단차를 완화시키고 상부의 오픈 마스크를 제거한다음, 그 상부에 도전층을 증착하고 전체구조상부에 감광막을 도포한 후, 미세패턴을 형성할 수 있는 감광막패턴을 형성하고 상기 감광막패턴을 마스크로하여 상기 도전층과 게이트산화막을 식각한 다음, 상부의 감광막패턴을 제거함으로써, 넛칭의 문제점이 대두되지 않으며 후속공정을 용이하게 하여 반도체소자의 수율을 향상시키는 기술이다.The present invention relates to a method for forming a fine pattern of a semiconductor device, and after forming a field oxide film having a gate oxide film by a known technique and forming an open mask to expose the field oxide film thereon, the field oxide film serves as device isolation. To the extent possible, the field oxide film is etched by a wet method to alleviate the step, the open mask on the upper part is removed, a conductive layer is deposited on the upper part, a photosensitive film is applied on the entire structure, and then a fine pattern is formed. By forming a photoresist film pattern which can be used as a mask, and etching the conductive layer and the gate oxide film using the photoresist pattern as a mask, and then removing the upper photoresist pattern, the problem of quenching does not arise and the subsequent process is facilitated so that the yield of a semiconductor device is facilitated. Is a technique to improve.

Description

Micro pattern formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2F도는 본 발명의 실시예에 의해 반도체소자의 미세패턴 형성공정을 도시한 단면도.2A to 2F are cross-sectional views showing a micropattern forming process of a semiconductor device in accordance with an embodiment of the present invention.

Claims

Forming a field oxide film having a gate oxide film formed in an active region on a semiconductor substrate by a known technique; and applying a positive photoresist film to the entire upper structure and exposing the field oxide film to expose the field oxide film by using a mask. Forming a pattern and using it as an open mask, Etching the field oxide layer by a wet method using the open mask as an etch barrier, and alleviating the step within the limit to allow device isolation, and removing the open mask. Thereafter, a conductive layer is deposited on the entire structure, a photoresist film is applied on the upper part of the structure, and a photoresist pattern for forming a micropattern is formed by an exposure and development process using a mask, and a conductive layer using the photoresist pattern as a mask. And the gate oxide film are etched to form a conductive layer pattern and a gate oxide pattern. A method of forming a fine pattern of a semiconductor device comprising the step of removing the photosensitive film pattern.

※ Note: The disclosure is based on the initial application.