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KR960014056B1 - Pattern forming method of potosensitive film - Google Patents

Pattern forming method of potosensitive film Download PDF

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Publication number
KR960014056B1
KR960014056B1 KR1019920013411A KR920013411A KR960014056B1 KR 960014056 B1 KR960014056 B1 KR 960014056B1 KR 1019920013411 A KR1019920013411 A KR 1019920013411A KR 920013411 A KR920013411 A KR 920013411A KR 960014056 B1 KR960014056 B1 KR 960014056B1
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South Korea
Prior art keywords
film
pattern
photosensitive film
forming
photoresist
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KR1019920013411A
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Korean (ko)
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KR940002664A (en
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이헌철
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현대전자산업 주식회사
김주용
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

내용없음.None.

Description

감광막 패턴 형성방법Photosensitive film pattern formation method

제1도 내지 제4도는 본 발명에 의해 감광막 패턴을 형성하는 단계를 도시한 단면도.1 to 4 are cross-sectional views showing the step of forming a photosensitive film pattern according to the present invention.

* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings

1 : 실리콘 기판 2 : 물질층1 silicon substrate 2 material layer

3 : 감광막 3A : 감광막 패턴3: photosensitive film 3A: photosensitive film pattern

4 : 마스크 5 : 노광된 감광막4 mask 5 exposed photosensitive film

6 : 산화막 10 : 요홈6 oxide film 10 groove

본 발명은 고집적 반도체 소자의 감광막 패턴 형성 방법에 관한 것으로, 특히 산화막 에치백 공정을 이용하여 감광막 패턴을 형성하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a photosensitive film pattern of a highly integrated semiconductor device, and more particularly, to a method of forming a photosensitive film pattern using an oxide etch back process.

반도체 소자에 사용되는 소정의 물질을 패턴하기 위해서는 감광막을 이용하는데 이러한 감광막을 이용하여 감광막 패턴을 형성하는 방법은 이미 널리 공지된 기술이다.In order to pattern a predetermined material used in a semiconductor device, a photosensitive film is used. A method of forming a photosensitive film pattern using the photosensitive film is a well-known technique.

반도체 소자가 더욱 고집적화됨에 따라 미세한 감광막 패턴이 필요로 하게 되어 종래에는 건식현상 방법을 이용하는 TLR(Tri-leved Resist)방법과 DESIRE(Diffusion Enhanced Silylating Resist) 방법을 이용하였다.As the semiconductor device is more highly integrated, a fine photoresist pattern is required. Conventionally, a TLR (Tri-leved Resist) method using a dry development method and a DIFfusion Enhanced Silylating Resist (DESIRE) method are used.

그러나 상기한 TLR 방법은 하부 감광막 도포, SOG층 도포, 상부 감광막 도포, 상부 감광막 패턴, SOG층 패턴, 하부 감광막 패턴 공정순서로 진행하기 때문에 공정이 복잡하여 공정시간이 길어지며, 파타클이 발생되어 오염 원인이 된다.However, the above-described TLR method proceeds in the order of applying the lower photoresist film, the SOG layer, the upper photoresist film, the upper photoresist pattern, the SOG layer pattern, and the lower photoresist pattern. It causes pollution.

또한, 상기 DESIRE 방법은 예를들어 실리레이션 오븐등의 추가 장비가 필요하고, 실리레이션 공정이 어려운 문제점이 있다.In addition, the DESIRE method requires additional equipment, such as a silencing oven, for example, and has a problem in that the silencing process is difficult.

따라서, 본 발명의 상기한 TLR 또는 DESIRE 방법 대신에 산화막 에치백 공정을 이용하여 하드마스크를 패턴한 다음, 건식현상(Dry Development)을 실현하는 감광막 패턴 형성방법을 제공하는데 있다.Accordingly, the present invention provides a method for forming a photoresist pattern that patterns a hard mask using an oxide etch back process instead of the TLR or DESIRE method of the present invention and then realizes dry development.

이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.

제1도 내지 제4도는 본 발명에 의해 감광막 패턴을 형성하는 단계를 도시한 단면도로서, 제1도는 실리콘 기판(1) 상부에 패턴을 형성하는 물질층(2) 예를들어 절연층 또는 도전층을 형성하고, 그 상부에 감광막(3)을 예를들어 10,000Å 정도 도포한 다음, 감광막(3) 상부에 패턴이 형성된 마스크(4)를 올려놓고 광을 노광시키되, 감광막(3)의 상부일정 두께만 노광시켜 노광된 감광막(5)을 도시한 단면도이다.1 to 4 are cross-sectional views showing the step of forming a photosensitive film pattern according to the present invention, Figure 1 is a material layer (2) for forming a pattern on the silicon substrate 1, for example, an insulating layer or a conductive layer And apply a photoresist film 3 on the upper surface thereof, for example, about 10,000Å, and then place a mask 4 on which the pattern is formed on the photoresist film 3 to expose light, and then schedule the upper part of the photoresist film 3. It is sectional drawing which shows the photosensitive film | membrane 5 exposed only by exposing thickness.

제2도는 상기 노강된 감광막(5)을 습식화학을 이용하는 현상공정으로 제거하여 요홈(10)을 형성한 다음, 감광막(3) 상부면에 산화막(6)을 일정두께 형성하여 상기 요홈(10)을 충분하게 채운 상태의 단면도이다.FIG. 2 shows the recessed photoresist 10 formed by removing the hardened photoresist film 5 by a developing process using wet chemistry, and then forming a predetermined thickness of the oxide film 6 on the upper surface of the photoresist film 3. This is a cross-sectional view of a state filled with sufficient.

제3도는 상기 산화막(6)의 일정두께를 에치백(etch back) 공정으로 식각하되, 감광막(3)상부면이 노출되기까지 식각하여 요홈(10)에만 산화막(6)이 남아있도록한 상태의 단면도이다.FIG. 3 shows etching of a predetermined thickness of the oxide film 6 by an etch back process, but etching the upper surface of the photoresist film 3 so that the oxide film 6 remains only in the groove 10. It is a cross section.

제4도는 요홈(10)에 남아있는 산화막(6)을 마스크로 사용하여 노출된 감광막(3)을 건식식각 또는 건식 현상(Dry Development)으로 제거하여 감광팍 패턴(3A)을 형성한 상태의 단면도로서 요홈(10)에 남아있는 산화막(6)이 감광막(3)에 대한 마스크로 충분하게 작용됨을 도시한다.4 is a cross-sectional view of the photosensitive film pattern 3A formed by removing the exposed photosensitive film 3 by dry etching or dry development using the oxide film 6 remaining in the groove 10 as a mask. As a result, the oxide film 6 remaining in the groove 10 serves as a mask for the photosensitive film 3 sufficiently.

상기한 본 발명은 TLR 또는 DESIRE 공정을 이용하지 않고 단순히 산화막 에치백 기술을 이용하여 하드마스크를 형성하고, 건식현상을 이용하여 감광막 패턴을 형성하는 기술로써 TLR에 비해 공정이 단순할뿐아니라 신규 장비도 필요하지 않는 효과가 있다.The present invention described above is a technique for forming a hard mask using an oxide etch-back technique without using a TLR or a DESIRE process, and a photoresist pattern using a dry phenomenon. There is no need for effects.

Claims (2)

감광막 패턴 형성방법에 있어서, 실리콘 기판 상부에 패턴을 형성할 물질층을 형성하고, 그 상부에 감광막을 도포하는 단계와, 도포된 감광막 상부에 패턴이 형성된 마스크를 올려놓고, 감광막의 일정두께만 노광시키는 단계와, 노광된 감광막을 습식화학을 이용하는 현상공정으로 제거하여 요홈을 형성하고, 감광막 상부면에 절연막을 일정두께 형성하는 단계와, 상기 절연막을 에치백 공정으로 식각하되, 감광막 상부면이 노출되기까지 식각하여 요홈에만 절연막을 남겨놓는 단계와, 요홈에 남아있는 절연막을 마스크로 사용하여 노출된 감광막을 건식식각 공정으로 제거하여 감광막 패턴을 형성하는 단계로 이루어지는 것을 특징으로 하는 감광막 패턴 형성방법.In the method of forming a photosensitive film pattern, forming a material layer for forming a pattern on a silicon substrate, applying a photosensitive film on the upper surface thereof, placing a mask on which the pattern is formed on the applied photosensitive film, and exposing only a predetermined thickness of the photosensitive film Forming a groove by removing the exposed photosensitive film by a developing process using wet chemistry, forming an insulating film on the upper surface of the photosensitive film by etching, and etching the insulating film by an etch back process, wherein the upper surface of the photosensitive film is exposed. Leaving an insulating film only in the grooves by etching until the photoresist is formed; and removing the exposed photoresist film by a dry etching process using the insulating film remaining in the grooves as a mask to form a photoresist pattern. 제1항에 있었, 상기 절연막은 산화막(SiO2)으로 형성되도록 한 것을 특징으로 하는 감광막 패턴 형성방법.The method of claim 1, wherein the insulating film is formed of an oxide film (SiO 2 ).
KR1019920013411A 1992-07-27 1992-07-27 Pattern forming method of potosensitive film Expired - Fee Related KR960014056B1 (en)

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KR1019920013411A KR960014056B1 (en) 1992-07-27 1992-07-27 Pattern forming method of potosensitive film

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Application Number Priority Date Filing Date Title
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KR960014056B1 true KR960014056B1 (en) 1996-10-11

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KR100810422B1 (en) * 2006-09-29 2008-03-04 주식회사 하이닉스반도체 Pattern formation method of semiconductor device

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