KR970008372A - Fine Pattern Formation Method of Semiconductor Device - Google Patents
Fine Pattern Formation Method of Semiconductor Device Download PDFInfo
- Publication number
- KR970008372A KR970008372A KR1019950023165A KR19950023165A KR970008372A KR 970008372 A KR970008372 A KR 970008372A KR 1019950023165 A KR1019950023165 A KR 1019950023165A KR 19950023165 A KR19950023165 A KR 19950023165A KR 970008372 A KR970008372 A KR 970008372A
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist
- semiconductor device
- mask
- fine pattern
- formation method
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract 8
- 230000007261 regionalization Effects 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract 10
- 239000000758 substrate Substances 0.000 claims abstract 4
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
반도체장치의 미세 패턴 형성방법이 개시되어 있다. 본 발명은 반도체장치의 패턴 형성방법에 있어서, 단차를 갖는 반도체기판 상에 포토레지스트를 도포하는 단계; 제1마스크를 사용하여 상기 반도체기판의 표면이 높은 부위 상에 형성된 포토레지스트의 표면에만 선택적으로 노광시키는 단계; 상기 선택적으로 노광된 포토레지스트를 제2마스크로 노광시키는 단계; 및 상기 제2마스크에 의해 노광된 포토레지스트를 현상함으로써, 원하는 포토레지스트 패턴을 형성하는 단계를 포함하는 것을 특징으로 한다.A method of forming a fine pattern of a semiconductor device is disclosed. A method of forming a pattern of a semiconductor device, the method comprising: applying a photoresist on a semiconductor substrate having a step; Selectively exposing only the surface of the photoresist formed on a portion where the surface of the semiconductor substrate is high using a first mask; Exposing the selectively exposed photoresist with a second mask; And developing the photoresist exposed by the second mask to form a desired photoresist pattern.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제4도는 본 발명에 의한 미세 패턴 형성방법을 설명하기 위한 단면도들이다.4 is a cross-sectional view illustrating a method for forming a fine pattern according to the present invention.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950023165A KR970008372A (en) | 1995-07-31 | 1995-07-31 | Fine Pattern Formation Method of Semiconductor Device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950023165A KR970008372A (en) | 1995-07-31 | 1995-07-31 | Fine Pattern Formation Method of Semiconductor Device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970008372A true KR970008372A (en) | 1997-02-24 |
Family
ID=66541861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950023165A KR970008372A (en) | 1995-07-31 | 1995-07-31 | Fine Pattern Formation Method of Semiconductor Device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970008372A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101357324B1 (en) * | 2007-07-19 | 2014-02-03 | 호야 가부시키가이샤 | Photomask for manufacturing display device and manufacturing method of the same |
| KR101401248B1 (en) * | 2006-05-15 | 2014-05-29 | 호야 일렉트로닉스 말레이지아 센드리안 베르하드 | Mask blank and photomask |
| KR101462074B1 (en) * | 2008-01-11 | 2014-11-17 | 상에이 기켄 가부시키가이샤 | Photomask for use in exposure |
| KR20170051955A (en) * | 2015-11-03 | 2017-05-12 | 삼성전자주식회사 | Method of manufacturing semiconductor device |
-
1995
- 1995-07-31 KR KR1019950023165A patent/KR970008372A/en not_active Application Discontinuation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101401248B1 (en) * | 2006-05-15 | 2014-05-29 | 호야 일렉트로닉스 말레이지아 센드리안 베르하드 | Mask blank and photomask |
| KR101357324B1 (en) * | 2007-07-19 | 2014-02-03 | 호야 가부시키가이샤 | Photomask for manufacturing display device and manufacturing method of the same |
| KR101462074B1 (en) * | 2008-01-11 | 2014-11-17 | 상에이 기켄 가부시키가이샤 | Photomask for use in exposure |
| KR20170051955A (en) * | 2015-11-03 | 2017-05-12 | 삼성전자주식회사 | Method of manufacturing semiconductor device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19950731 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |