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KR900008668A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR900008668A
KR900008668A KR1019890015796A KR890015796A KR900008668A KR 900008668 A KR900008668 A KR 900008668A KR 1019890015796 A KR1019890015796 A KR 1019890015796A KR 890015796 A KR890015796 A KR 890015796A KR 900008668 A KR900008668 A KR 900008668A
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KR
South Korea
Prior art keywords
semiconductor
electrode
region
thin layer
stop wall
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KR1019890015796A
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English (en)
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KR930004717B1 (ko
Inventor
고오지 오오쯔까
히로가즈 고토오
Original Assignee
고타니 고우이찌
산켄덴끼 가부시끼가이샤
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Publication of KR900008668A publication Critical patent/KR900008668A/ko
Application granted granted Critical
Publication of KR930004717B1 publication Critical patent/KR930004717B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters

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  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 받명의 제1의 실시예에 관한 쇼트키배리어 다이오드를 보여주는 단면도,
제2도는 제1도의 접속전극과 실리콘산화막을 생략한 쇼트키배리어다이오드를 보여주는 평면도,
제3도 (A) (B)는 제1도의 쇼트키배리어다이오드의 제조방법을 공정순으로 보여주는 단면도.

Claims (3)

  1. 반도체영역과, 전극을 구비하여 반도체영역과의 사이에 정류장벽을 형성하기 위한 정류장벽 형성수단과, 전극을 포위하도록 반도체영역상에 배치되고, 또한 전극에 전기적으로 접속되고, 또한 전극의 시트저항보다 큰 10k/□ 이상의 시트저항을 가지며, 그리고 반도체영역과의 사이에 쇼트키배리어가 생기게 하도록 형성되어 있는 제1의 박층영역과, 제1의 박층영역을 포함하도록 반도체영역상에 배치되고, 또한 제1의 박층영역에 전기적으로 접속되고, 또한 제1의 박층영역보다 큰 시트저항을 가지며, 또한 반도체영역과의 사이에 쇼트키배리어가 생기게하도록 형성되어 있는 제2의 박층영역을 구비한 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 정류장벽형성수단은, 반도체영역(3)과의 사이에 쇼트키배리어를 형성하는 배리어전극(4)인 것을 특징으로 하는 반도체장치.
  3. 제1항에 있어서, 정류장벽형성수단은, 반도체영역(23)과 반대의 도전형을 가지며, 또한 반도체영역(23)보다도 낮은 저항율을 가지고 있는 반대도전형 반도체영역(24)과, 반대도전형 반도체영역(24)상에 형성된 오오믹전극(26)으로 이루어지는 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890015796A 1988-11-11 1989-11-01 반도체 장치 KR930004717B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63285048A JPH0618276B2 (ja) 1988-11-11 1988-11-11 半導体装置
JP63-285048 1988-11-11
JP88-285048 1988-11-11

Publications (2)

Publication Number Publication Date
KR900008668A true KR900008668A (ko) 1990-06-04
KR930004717B1 KR930004717B1 (ko) 1993-06-03

Family

ID=17686493

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890015796A KR930004717B1 (ko) 1988-11-11 1989-11-01 반도체 장치

Country Status (5)

Country Link
US (2) US5081510A (ko)
EP (2) EP0368127B1 (ko)
JP (1) JPH0618276B2 (ko)
KR (1) KR930004717B1 (ko)
DE (1) DE68917558T2 (ko)

Families Citing this family (18)

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US5221638A (en) * 1991-09-10 1993-06-22 Sanken Electric Co., Ltd. Method of manufacturing a Schottky barrier semiconductor device
JPH05335489A (ja) * 1992-06-02 1993-12-17 Nec Corp 半導体装置
US5622877A (en) * 1993-03-02 1997-04-22 Ramot University Authority For Applied Research & Industrial Development Ltd. Method for making high-voltage high-speed gallium arsenide power Schottky diode
US5594237A (en) * 1995-02-24 1997-01-14 The Whitaker Corporation PIN detector having improved linear response
JP3123452B2 (ja) * 1996-12-10 2001-01-09 富士電機株式会社 ショットキーバリアダイオード
JP3287269B2 (ja) * 1997-06-02 2002-06-04 富士電機株式会社 ダイオードとその製造方法
US6379509B2 (en) * 1998-01-20 2002-04-30 3M Innovative Properties Company Process for forming electrodes
US6229193B1 (en) * 1998-04-06 2001-05-08 California Institute Of Technology Multiple stage high power diode
EP1145298A3 (de) 1998-05-26 2002-11-20 Infineon Technologies AG Verfahren zur herstellung von schottky-dioden
EP1341238B1 (en) * 2002-02-20 2012-09-05 Shindengen Electric Manufacturing Co., Ltd. Diode device and transistor device
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
JP4730529B2 (ja) * 2005-07-13 2011-07-20 サンケン電気株式会社 電界効果トランジスタ
US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate
US9893192B2 (en) * 2013-04-24 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6544264B2 (ja) * 2016-02-23 2019-07-17 サンケン電気株式会社 半導体装置
DE102016013540A1 (de) * 2016-11-14 2018-05-17 3 - 5 Power Electronics GmbH lll-V-Halbleiterdiode
JP6558385B2 (ja) * 2017-02-23 2019-08-14 トヨタ自動車株式会社 半導体装置の製造方法
CN111276534A (zh) * 2020-02-03 2020-06-12 扬州国宇电子有限公司 一种肖特基势垒二极管的钝化结构及其制备方法

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JPS4941463A (ko) * 1972-07-26 1974-04-18
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Also Published As

Publication number Publication date
KR930004717B1 (ko) 1993-06-03
DE68917558D1 (de) 1994-09-22
US5081510A (en) 1992-01-14
EP0368127A2 (en) 1990-05-16
EP0579286A3 (en) 1994-09-07
DE68917558T2 (de) 1995-04-20
EP0368127A3 (en) 1990-09-19
US5112774A (en) 1992-05-12
JPH02130959A (ja) 1990-05-18
EP0368127B1 (en) 1994-08-17
JPH0618276B2 (ja) 1994-03-09
EP0579286A2 (en) 1994-01-19

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