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KR890016649A - 박막 저항 소자를 가진 반도체 장치 제조 방법 - Google Patents

박막 저항 소자를 가진 반도체 장치 제조 방법

Info

Publication number
KR890016649A
KR890016649A KR1019890004416A KR890004416A KR890016649A KR 890016649 A KR890016649 A KR 890016649A KR 1019890004416 A KR1019890004416 A KR 1019890004416A KR 890004416 A KR890004416 A KR 890004416A KR 890016649 A KR890016649 A KR 890016649A
Authority
KR
South Korea
Prior art keywords
manufacturing
thin film
semiconductor device
film resistor
resistor
Prior art date
Application number
KR1019890004416A
Other languages
English (en)
Other versions
KR0138914B1 (ko
Inventor
다까시 호사까
Original Assignee
세이꼬 덴시 고교 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세이꼬 덴시 고교 가부시끼 가이샤 filed Critical 세이꼬 덴시 고교 가부시끼 가이샤
Publication of KR890016649A publication Critical patent/KR890016649A/ko
Application granted granted Critical
Publication of KR0138914B1 publication Critical patent/KR0138914B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53219—Aluminium alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019890004416A 1988-04-05 1989-04-04 박막 저항 소자를 가진 반도체 장치 제조 방법 KR0138914B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63083932A JPH01255264A (ja) 1988-04-05 1988-04-05 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR890016649A true KR890016649A (ko) 1989-11-29
KR0138914B1 KR0138914B1 (ko) 1998-06-01

Family

ID=13816372

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890004416A KR0138914B1 (ko) 1988-04-05 1989-04-04 박막 저항 소자를 가진 반도체 장치 제조 방법

Country Status (3)

Country Link
US (1) US5030588A (ko)
JP (1) JPH01255264A (ko)
KR (1) KR0138914B1 (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166088A (en) * 1990-07-03 1992-11-24 Sharp Kabushiki Kaisha Method of manufacturing semiconductor device contact vias in layers comprising silicon nitride and glass
US5481129A (en) * 1991-10-30 1996-01-02 Harris Corporation Analog-to-digital converter
KR940008883B1 (ko) * 1992-04-08 1994-09-28 삼성전자 주식회사 박막저항의 제조방법
KR960004079B1 (en) * 1992-12-19 1996-03-26 Lg Semicon Co Ltd Contact hole forming method
US5336631A (en) * 1993-05-26 1994-08-09 Westinghouse Electric Corporation Method of making and trimming ballast resistors and barrier metal in microwave power transistors
JP2932940B2 (ja) * 1994-06-08 1999-08-09 株式会社デンソー 薄膜抵抗体を有する半導体装置の製造方法
US5665629A (en) * 1995-08-11 1997-09-09 International Business Machines Corporation Four transistor SRAM process
US5578854A (en) * 1995-08-11 1996-11-26 International Business Machines Corporation Vertical load resistor SRAM cell
US5899724A (en) * 1996-05-09 1999-05-04 International Business Machines Corporation Method for fabricating a titanium resistor
US6242792B1 (en) 1996-07-02 2001-06-05 Denso Corporation Semiconductor device having oblique portion as reflection
JP3374680B2 (ja) 1996-11-06 2003-02-10 株式会社デンソー 半導体装置の製造方法
US6184130B1 (en) * 1997-11-06 2001-02-06 Industrial Technology Research Institute Silicide glue layer for W-CVD plug application
US6228735B1 (en) * 1998-12-15 2001-05-08 United Microelectronics Corp. Method of fabricating thin-film transistor
US6703666B1 (en) 1999-07-14 2004-03-09 Agere Systems Inc. Thin film resistor device and a method of manufacture therefor
EP1203400A1 (en) * 1999-07-14 2002-05-08 Lucent Technologies Inc. A thin film resistor device and a method of manufacture therefor
US6607984B1 (en) * 2000-06-20 2003-08-19 International Business Machines Corporation Removable inorganic anti-reflection coating process
KR100669141B1 (ko) * 2005-01-17 2007-01-15 삼성전자주식회사 오믹막 및 이의 형성 방법, 오믹막을 포함하는 반도체장치 및 이의 제조 방법
US7803687B2 (en) * 2008-10-17 2010-09-28 United Microelectronics Corp. Method for forming a thin film resistor
JP5616826B2 (ja) * 2011-03-13 2014-10-29 セイコーインスツル株式会社 抵抗回路を有する半導体装置
US8519487B2 (en) 2011-03-21 2013-08-27 United Microelectronics Corp. Semiconductor device
CN103187323A (zh) * 2011-12-28 2013-07-03 北大方正集团有限公司 一种半导体芯片及其压焊块金属层增厚制作方法
US8860181B2 (en) 2012-03-07 2014-10-14 United Microelectronics Corp. Thin film resistor structure

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4416049A (en) * 1970-05-30 1983-11-22 Texas Instruments Incorporated Semiconductor integrated circuit with vertical implanted polycrystalline silicon resistor
JPS5561037A (en) * 1978-10-31 1980-05-08 Toshiba Corp Preparation of semiconductor device
US4391846A (en) * 1979-04-05 1983-07-05 The United States Of America As Represented By The United States Department Of Energy Method of preparing high-temperature-stable thin-film resistors
JPS55138874A (en) * 1979-04-18 1980-10-30 Fujitsu Ltd Semiconductor device and method of fabricating the same
JPS5814072B2 (ja) * 1979-08-20 1983-03-17 日本電信電話株式会社 半導体集積回路装置及びその製法
JPS5775453A (en) * 1980-10-29 1982-05-12 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS5889854A (ja) * 1981-11-24 1983-05-28 Seiko Epson Corp 半導体装置
JPS58225663A (ja) * 1982-06-23 1983-12-27 Toshiba Corp 半導体装置の製造方法
JPS593587A (ja) * 1982-06-30 1984-01-10 Casio Comput Co Ltd バ−コ−ド読取装置
JPS5983729A (ja) * 1982-11-02 1984-05-15 Ube Ind Ltd 重金属の回収方法
US4693925A (en) * 1984-03-01 1987-09-15 Advanced Micro Devices, Inc. Integrated circuit structure having intermediate metal silicide layer
US4786612A (en) * 1986-02-03 1988-11-22 Intel Corporation Plasma enhanced chemical vapor deposited vertical silicon nitride resistor

Also Published As

Publication number Publication date
JPH01255264A (ja) 1989-10-12
US5030588A (en) 1991-07-09
KR0138914B1 (ko) 1998-06-01

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