KR860004414A - 판독전용 반도체 기억장치 - Google Patents

판독전용 반도체 기억장치

Info

Publication number: KR860004414A
Authority: KR; South Korea
Prior art keywords: read; semiconductor memory; semiconductor; memory
Prior art date: 1984-11-19

Application number

KR1019850008614A

Other languages

English (en)

Other versions

KR900008185B1 (ko

Inventor

자와 쇼지 기타

Original Assignee

오끼 뎅끼 고오교오 가부시끼가이샤

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-11-19

Filing date

1985-11-18

Publication date

1986-06-23

1984-11-19 Priority claimed from JP59245586A external-priority patent/JPS61123000A/ja

1984-11-28 Priority claimed from JP59251046A external-priority patent/JPS61129800A/ja

1985-11-18 Application filed by 오끼 뎅끼 고오교오 가부시끼가이샤 filed Critical 오끼 뎅끼 고오교오 가부시끼가이샤

1986-06-23 Publication of KR860004414A publication Critical patent/KR860004414A/ko

1990-11-05 Application granted granted Critical

1990-11-05 Publication of KR900008185B1 publication Critical patent/KR900008185B1/ko

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

KR1019850008614A 1984-11-09 1985-11-18 판독전용 반도체 기억장치 KR900008185B1 (ko)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
JP245586		1984-11-09
JP59245586A JPS61123000A (ja)	1984-11-19	1984-11-19	読出し専用半導体記憶装置
JP59251046A JPS61129800A (ja)	1984-11-28	1984-11-28	Ｒｏｍ装置
JP251046		1984-11-28

Publications (2)

Publication Number	Publication Date
KR860004414A true KR860004414A (ko)	1986-06-23
KR900008185B1 KR900008185B1 (ko)	1990-11-05

Family

ID=26537294

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019850008614A KR900008185B1 (ko)	1984-11-09	1985-11-18	판독전용 반도체 기억장치

Country Status (4)

Country	Link
US (1)	US4709352A (ko)
EP (1)	EP0183476B1 (ko)
KR (1)	KR900008185B1 (ko)
DE (1)	DE3584612D1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5175704A (en) *	1987-07-29	1992-12-29	Kabushiki Kaisha Toshiba	Nonvolatile semiconductor memory device
JP2617189B2 (ja) *	1987-08-03	1997-06-04	沖電気工業株式会社	電流検出回路
JP2513795B2 (ja) *	1988-07-22	1996-07-03	沖電気工業株式会社	Ｍｏｓ型半導体記憶装置
US5204838A (en) *	1988-10-28	1993-04-20	Fuji Xerox Co., Ltd.	High speed readout circuit
US5469195A (en) *	1991-01-24	1995-11-21	Texas Instruments Incorporated	Integrated circuit capacitors, buffers, systems and methods
JP2723695B2 (ja) *	1991-07-02	1998-03-09	シャープ株式会社	半導体記憶装置
US5422845A (en) *	1993-09-30	1995-06-06	Intel Corporation	Method and device for improved programming threshold voltage distribution in electrically programmable read only memory array
US6169686B1 (en) *	1997-11-20	2001-01-02	Hewlett-Packard Company	Solid-state memory with magnetic storage cells
JP2005142289A (ja) *	2003-11-05	2005-06-02	Toshiba Corp	半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5847796B2 (ja) *	1979-05-26	1983-10-25	富士通株式会社	半導体メモリ装置
JPS6014438B2 (ja) *	1979-08-29	1985-04-13	株式会社東芝	不揮発性半導体メモリ−
JPS5837636B2 (ja) *	1980-07-31	1983-08-17	富士通株式会社	半導体記憶装置
US4366555A (en) *	1980-08-01	1982-12-28	National Semiconductor Corporation	Electrically erasable programmable read only memory
JPS5940397A (ja) *	1982-08-31	1984-03-06	Toshiba Corp	デ−タ読み出し回路

1985
- 1985-11-15 US US06/798,681 patent/US4709352A/en not_active Expired - Lifetime
- 1985-11-18 KR KR1019850008614A patent/KR900008185B1/ko not_active IP Right Cessation
- 1985-11-19 EP EP85308426A patent/EP0183476B1/en not_active Expired - Lifetime
- 1985-11-19 DE DE8585308426T patent/DE3584612D1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0183476A2 (en)	1986-06-04
US4709352A (en)	1987-11-24
DE3584612D1 (de)	1991-12-12
EP0183476B1 (en)	1991-11-06
EP0183476A3 (en)	1989-04-05
KR900008185B1 (ko)	1990-11-05

Publication	Publication Date	Title
KR860001484A (ko)	1986-02-26	반도체 기억장치
KR860005370A (ko)	1986-07-21	반도체 기억장치
DE3585711D1 (de)	1992-04-30	Halbleiterspeicheranordnung.
KR880004487A (ko)	1988-06-07	불 휘발성 반도체 기억장치
KR860006106A (ko)	1986-08-18	반도체 메모리
KR880014861A (ko)	1988-12-24	반도체 기억장치
KR860002903A (ko)	1986-04-30	프로그램가능한 반도체 구조
DE3583091D1 (de)	1991-07-11	Halbleiterspeicheranordnung.
DE3577944D1 (de)	1990-06-28	Halbleiterspeicheranordnung.
DE3686994D1 (de)	1992-11-26	Halbleiterspeicher.
KR870001664A (ko)	1987-03-17	반도체 기억 장치
KR860005441A (ko)	1986-07-23	반도체기억장치
DE3576013D1 (de)	1990-03-15	Nichtfluechtiger halbleiterspeicher.
KR850001613A (ko)	1985-03-30	반도체 메모리
KR860002824A (ko)	1986-04-30	반도체 기억장치
DE3582376D1 (de)	1991-05-08	Halbleiterspeicheranordnung.
DE3586377D1 (de)	1992-08-27	Halbleiterspeicheranordnung.
KR860005369A (ko)	1986-07-21	반도체 기억장치
KR860004478A (ko)	1986-06-23	반도체 메모리 장치
DE3576236D1 (de)	1990-04-05	Halbleiterspeicheranordnung.
DE3577367D1 (de)	1990-05-31	Halbleiterspeicheranordnung.
DE3575225D1 (de)	1990-02-08	Halbleiterspeicheranordnung.
DE3580993D1 (de)	1991-02-07	Halbleiterspeicheranordnung.
DE3586556D1 (de)	1992-10-01	Halbleiterspeicheranordnung.
DE3576754D1 (de)	1990-04-26	Halbleiterspeicheranordnung.

Legal Events

Date	Code	Title	Description
1985-11-18	PA0109	Patent application	Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19851118
1986-06-23	PG1501	Laying open of application
1987-10-29	A201	Request for examination
1987-10-29	PA0201	Request for examination	Patent event code: PA02012R01D Patent event date: 19871029 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 19851118 Comment text: Patent Application
1990-04-28	E902	Notification of reason for refusal
1990-04-28	PE0902	Notice of grounds for rejection	Comment text: Notification of reason for refusal Patent event date: 19900428 Patent event code: PE09021S01D
1990-10-06	G160	Decision to publish patent application
1990-11-05	PG1605	Publication of application before grant of patent	Comment text: Decision on Publication of Application Patent event code: PG16051S01I Patent event date: 19901006
1991-01-16	E701	Decision to grant or registration of patent right
1991-01-16	PE0701	Decision of registration	Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19910116
1991-01-24	GRNT	Written decision to grant
1991-01-24	PR0701	Registration of establishment	Comment text: Registration of Establishment Patent event date: 19910124 Patent event code: PR07011E01D
1991-01-24	PR1002	Payment of registration fee	Payment date: 19910124 End annual number: 3 Start annual number: 1
1993-10-21	PR1001	Payment of annual fee	Payment date: 19931021 Start annual number: 4 End annual number: 4
1994-10-31	PR1001	Payment of annual fee	Payment date: 19941031 Start annual number: 5 End annual number: 5
1995-11-01	PR1001	Payment of annual fee	Payment date: 19951101 Start annual number: 6 End annual number: 6
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1997-10-28	PR1001	Payment of annual fee	Payment date: 19971028 Start annual number: 8 End annual number: 8
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2005-10-25	FPAY	Annual fee payment	Payment date: 20051025 Year of fee payment: 16
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2005-11-19	EXPY	Expiration of term
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