KR860005369A - 반도체 기억장치 - Google Patents

반도체 기억장치

Info

Publication number: KR860005369A
Authority: KR; South Korea
Prior art keywords: semiconductor memory; semiconductor; memory
Prior art date: 1984-12-13

Application number

KR1019850004220A

Other languages

English (en)

Other versions

KR900000050B1 (ko

Inventor

미쯔기 오구라

야스오 이또오

Original Assignee

가부시끼가이샤 도오시바

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-12-13

Filing date

1985-06-14

Publication date

1986-07-21

1985-06-14 Application filed by 가부시끼가이샤 도오시바 filed Critical 가부시끼가이샤 도오시바

1986-07-21 Publication of KR860005369A publication Critical patent/KR860005369A/ko

1990-01-18 Application granted granted Critical

1990-01-18 Publication of KR900000050B1 publication Critical patent/KR900000050B1/ko

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Dram (AREA)

KR1019850004220A 1984-12-13 1985-06-14 반도체 기억장치 KR900000050B1 (ko)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP59-263301		1984-12-13
JP59263301A JPS61142591A (ja)	1984-12-13	1984-12-13	半導体記憶装置

Publications (2)

Publication Number	Publication Date
KR860005369A true KR860005369A (ko)	1986-07-21
KR900000050B1 KR900000050B1 (ko)	1990-01-18

Family

ID=17387571

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019850004220A KR900000050B1 (ko)	1984-12-13	1985-06-14	반도체 기억장치

Country Status (5)

Country	Link
US (1)	US4748596A (ko)
EP (1)	EP0185451B1 (ko)
JP (1)	JPS61142591A (ko)
KR (1)	KR900000050B1 (ko)
DE (1)	DE3587592T2 (ko)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5587952A (en) *	1984-12-17	1996-12-24	Hitachi, Ltd.	Dynamic random access memory including read preamplifiers activated before rewrite amplifiers
US5132930A (en) *	1986-07-31	1992-07-21	Mitsubishi Denki Kabushiki Kaisha	CMOS dynamic memory device having multiple flip-flop circuits selectively coupled to form sense amplifiers specific to neighboring data bit lines
FR2603414B1 (fr) *	1986-08-29	1988-10-28	Bull Sa	Amplificateur de lecture
US5214601A (en) *	1986-12-11	1993-05-25	Mitsubishi Denki Kabushiki Kaisha	Bit line structure for semiconductor memory device including cross-points and multiple interconnect layers
JPH0713851B2 (ja) *	1987-03-24	1995-02-15	三菱電機株式会社	半導体記憶装置
US4807195A (en) *	1987-05-18	1989-02-21	International Business Machines Corporation	Apparatus and method for providing a dual sense amplifier with divided bit line isolation
JPH01133286A (ja) *	1987-11-17	1989-05-25	Mitsubishi Electric Corp	ダイナミツクｒａｍ
JPH01130392A (ja) *	1987-11-17	1989-05-23	Mitsubishi Electric Corp	ダイナミック型ランダムアクセスメモリ装置
JPH0758592B2 (ja) *	1987-11-30	1995-06-21	日本電気株式会社	半導体メモリ
JP2666943B2 (ja) *	1988-01-27	1997-10-22	株式会社東芝	半導体記憶装置
KR910002203B1 (ko) *	1988-03-17	1991-04-06	삼성전자 주식회사	메모리 소자의 센싱 검출 회로
US5293338A (en) *	1990-02-22	1994-03-08	Sharp Kabushiki Kaisha	Peripheral circuit in a dynamic semiconductor memory device enabling a time-saving and energy-saving data readout
JP3101298B2 (ja) *	1990-03-30	2000-10-23	株式会社東芝	半導体メモリ装置
JP2611504B2 (ja) *	1990-06-15	1997-05-21	日本電気株式会社	半導体メモリ
US5226014A (en) *	1990-12-24	1993-07-06	Ncr Corporation	Low power pseudo-static ROM
US5475642A (en) *	1992-06-23	1995-12-12	Taylor; David L.	Dynamic random access memory with bit line preamp/driver
US5325336A (en) *	1992-09-10	1994-06-28	Mitsubishi Denki Kabushiki Kaisha	Semiconductor memory device having power line arranged in a meshed shape
JPH09251782A (ja) *	1996-03-14	1997-09-22	Fujitsu Ltd	半導体記憶装置
US6677199B1 (en) *	2002-07-02	2004-01-13	Macronix International Co., Ltd.	Structure for preventing salicide bridging and method thereof
US6826094B1 (en) *	2003-06-02	2004-11-30	Hewlett-Packard Development Company, L.P.	Magnetic memory cell sensing with first and second currents
US7257042B2 (en) *	2006-01-12	2007-08-14	International Business Machines Corporation	Enhanced sensing in a hierarchical memory architecture

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1486772A (en) *	1973-07-30	1977-09-21	Indep Broadcasting Authority	Television systems
US4039861A (en) *	1976-02-09	1977-08-02	International Business Machines Corporation	Cross-coupled charge transfer sense amplifier circuits
JPS5938670B2 (ja) *	1976-10-15	1984-09-18	日本電気株式会社	差信号増巾回路
JPS6041463B2 (ja) *	1976-11-19	1985-09-17	株式会社日立製作所	ダイナミツク記憶装置
US4286178A (en) *	1978-06-12	1981-08-25	Texas Instruments Incorporated	Sense amplifier with dual parallel driver transistors in MOS random access memory
US4298867A (en) *	1979-07-06	1981-11-03	System Concepts, Inc.	Cathode ray tube character smoother
US4331955A (en) *	1980-08-07	1982-05-25	Eltra Corporation	Method and apparatus for smoothing outlines
JPS5748207A (en) *	1980-09-05	1982-03-19	Toshiba Corp	Superconductive electromagnet
SE423758B (sv) *	1980-09-29	1982-05-24	Asea Ab	Styrenhet for ett presentationsorgan
US4386349A (en) *	1981-04-28	1983-05-31	Sperry Corporation	High resolution graphics smoothing
JPS57186289A (en) *	1981-05-13	1982-11-16	Hitachi Ltd	Semiconductor memory
US4506351A (en) *	1982-06-23	1985-03-19	International Business Machines Corporation	One-device random access memory having enhanced sense signal
JPS5912485A (ja) *	1982-07-13	1984-01-23	神鋼電機株式会社	文字の拡大補間方法
US4551641A (en) *	1983-11-23	1985-11-05	Motorola, Inc.	Sense amplifier
EP0163721A1 (en) *	1983-12-02	1985-12-11	AT&T Corp.	Semiconductor memory

1984
- 1984-12-13 JP JP59263301A patent/JPS61142591A/ja active Granted
1985
- 1985-06-14 KR KR1019850004220A patent/KR900000050B1/ko not_active IP Right Cessation
- 1985-10-28 US US06/792,197 patent/US4748596A/en not_active Expired - Lifetime
- 1985-11-01 DE DE85307960T patent/DE3587592T2/de not_active Expired - Lifetime
- 1985-11-01 EP EP85307960A patent/EP0185451B1/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0185451A2 (en)	1986-06-25
US4748596A (en)	1988-05-31
KR900000050B1 (ko)	1990-01-18
JPH0587915B2 (ko)	1993-12-20
JPS61142591A (ja)	1986-06-30
DE3587592T2 (de)	1994-02-03
DE3587592D1 (de)	1993-10-28
EP0185451B1 (en)	1993-09-22
EP0185451A3 (en)	1988-12-07

Publication	Publication Date	Title
KR860001484A (ko)	1986-02-26	반도체 기억장치
KR860005370A (ko)	1986-07-21	반도체 기억장치
KR860006106A (ko)	1986-08-18	반도체 메모리
DE3585711D1 (de)	1992-04-30	Halbleiterspeicheranordnung.
KR880014861A (ko)	1988-12-24	반도체 기억장치
KR860005441A (ko)	1986-07-23	반도체기억장치
KR870001664A (ko)	1987-03-17	반도체 기억 장치
DE3583091D1 (de)	1991-07-11	Halbleiterspeicheranordnung.
DE3686994D1 (de)	1992-11-26	Halbleiterspeicher.
DE3577944D1 (de)	1990-06-28	Halbleiterspeicheranordnung.
KR850001613A (ko)	1985-03-30	반도체 메모리
KR880013252A (ko)	1988-11-30	반도체 기억장치
KR860002824A (ko)	1986-04-30	반도체 기억장치
DE3582376D1 (de)	1991-05-08	Halbleiterspeicheranordnung.
KR860004478A (ko)	1986-06-23	반도체 메모리 장치
DE3586377D1 (de)	1992-08-27	Halbleiterspeicheranordnung.
KR860005369A (ko)	1986-07-21	반도체 기억장치
DE3576236D1 (de)	1990-04-05	Halbleiterspeicheranordnung.
KR860003606A (ko)	1986-05-28	반도체 메모리 장치
DE3680562D1 (de)	1991-09-05	Halbleiterspeicheranordnung.
DE3675445D1 (de)	1990-12-13	Halbleiterspeicheranordnung.
DE3586556D1 (de)	1992-10-01	Halbleiterspeicheranordnung.
DE3580993D1 (de)	1991-02-07	Halbleiterspeicheranordnung.
DE3575225D1 (de)	1990-02-08	Halbleiterspeicheranordnung.
DE3576754D1 (de)	1990-04-26	Halbleiterspeicheranordnung.

Legal Events

Date	Code	Title	Description
1985-06-14	A201	Request for examination
1985-06-14	PA0109	Patent application	Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19850614
1985-06-14	PA0201	Request for examination
1986-07-21	PG1501	Laying open of application
1989-11-29	G160	Decision to publish patent application
1990-01-18	PG1605	Publication of application before grant of patent	Comment text: Decision on Publication of Application Patent event code: PG16051S01I Patent event date: 19891129
1990-04-16	E701	Decision to grant or registration of patent right
1990-04-16	PE0701	Decision of registration	Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19900416
1990-07-11	GRNT	Written decision to grant
1990-07-11	PR0701	Registration of establishment	Comment text: Registration of Establishment Patent event date: 19900711 Patent event code: PR07011E01D
1990-07-11	PR1002	Payment of registration fee	Payment date: 19900711 End annual number: 3 Start annual number: 1
1993-01-11	FPAY	Annual fee payment	Payment date: 19930111 Year of fee payment: 4
1993-01-11	PR1001	Payment of annual fee	Payment date: 19930111 Start annual number: 4 End annual number: 4
1994-01-19	LAPS	Lapse due to unpaid annual fee
1994-01-19	PC1903	Unpaid annual fee