KR20150016210A - 고용량 고체상 복합물 양극, 고체상 복합물 분리막, 재충전가능한 고체상 리튬 전지 및 이의 제조 방법 - Google Patents
고용량 고체상 복합물 양극, 고체상 복합물 분리막, 재충전가능한 고체상 리튬 전지 및 이의 제조 방법 Download PDFInfo
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Abstract
Description
도면에서:
도 1은 본 발명의 실시예에 따른 리튬 전지 셀의 단면도이다.
도2는 본 발명의 실시예에 따른 두 개의 복합 전지 셀의 개략도이다.
도 3은 본 발명의 실시예에 따른 복합물 분리막의 임피던스 스펙트럼의 나이퀴스트 선도이다.
4: 분리막 6: 리튬계 음극
8: 리튬 전지
Claims (39)
- 비정질 무기 이온 전도성 금속 산화물 내로 분산된 양극활물질(active cathode material)을 포함하는 고체상 복합물 양극.
- 제 1항에 있어서,
상기 비정질 무기 이온 전도성 금속 산화물은 비정질 리튬 란탄 산화지르코늄 및 비정질 리튬 카본 란탄 산화지르코늄으로 이루어진 군으로부터 적어도 하나의 물질을 선택하는 복합물 양극. - 제 1항에 있어서,
상기 비정질 무기 이온 전도성 물질 내로 분산된 전기 전도성 물질을 더 포함하는 복합물 양극. - 제 3항에 있어서,
상기 전기 전도성 물질은 카본을 포함하는 양극. - 제 1항에 있어서,
상기 비정질 무기 이온 전도성 금속 산화물 내로 분산된 이온 전도성 분말을 더 포함하는 양극. - 제 4항에 있어서,
상기 이온 전도성 분말은 리튬 알루미늄 인산게르마늄, 리튬 알루미늄 인산티타늄, 리튬 란탄 산화지르코늄, 리튬 카본 란탄 산화지르코늄 및 리튬 란탄 산화티타늄으로 이루어진 군으로부터 선택된 양극. - 제 1항에 있어서,
상기 양극은,
(a) 양극활물질 및 상기 비정질 무기 이온 전도성 금속 산화물의 전구체를 포함하는 슬러리를 준비하고,
(b) 상기 슬러리로부터 필름을 형성하고,
(c) 상기 필름을 가열하여, 상기 비정질 무기 이온 전도성 금속 산화물을 형성하되, 상기 양극활물질은 상기 비정질 금속 산화물 내로 분산되는 것을 포함하는 방법에 의해서 제조된 양극. - 제 2항에 있어서,
(a) 양극활물질 및 리튬, 란탄, 지르코늄 및 산소의 화합물을 포함하는 슬러리를 준비하고,
(b) 상기 슬러리로부터 필름을 형성하고,
(c) 상기 필름을 가열하여, 비정질 리튬 란탄 산화지르코늄 및 비정질 리튬 카본 란탄 산화지르코늄 중 적어도 하나를 형성하되, 상기 양극활물질은 상기 적어도 하나의 산화물 내로 분산되는 것을 포함하는 방법에 의해서 제조된 양극. - 제 8항에 있어서 단계 (c)는,
i) 오존이 풍부한, 습도가 낮은 공기 중에서 약 70-130°C로 상기 필름을 가열하는 것 및
ii) 습도가 낮은 공기 중에서 약 280-350°C로 상기 필름을 가열하는 것을 포함하는 양극. - 제 1항에 있어서,
상기 양극활물질은 표면 불순물을 실직적으로 포함하지 않는 양극. - 제 7항에 있어서,
상기 필름은 약 1마이크로미터 내지 1밀리미터의 두께를 갖는 양극. - 제 1항에 따른 양극, 고체 전해질, 리튬계 음극을 포함하는, 재충전가능한 고체상 리튬 전지.
- (a) 양극활물질 및 비정질 무기 이온 전도성 금속 산화물의 전구체를 포함하는 슬러리를 준비하고,
(b) 상기 슬러리로부터 필름을 형성하고,
(c) 상기 필름을 가열하여, 상기 비정질 무기 이온 전도성 금속 산화물을 형성하되, 상기 양극활물질은 상기 비정질 무기 이온 전도성 금속 산화물 내로 분산되는 것을 포함하는 고체상 복합물 양극의 제조 방법. - 제 13항에 있어서,
상기 비정질 무기 이온 전도성 금속 산화물은 리튬 란탄 산화지르코늄 및 리튬 란탄 카본 산화지르코늄으로 이루어진 군으로부터 선택하되, 단계 (a)는 양극활물질 및 리튬, 란타늄, 지르코늄 및 산소의 화합물을 포함하는 슬러리를 제조하는 것을 포함하는 고체상 복합물 양극의 제조 방법. - 제 14항에 있어서,
단계 (c)는,
i) 오존이 풍부한, 습도가 낮은 공기 중에서 약 70-130°C로 상기 필름을 가열하는 것 및
ii) 습도가 낮은 공기 중에서 약 280-350°C로 상기 필름을 가열하는 것을 포함하는 고체상 복합물 양극의 제조 방법. - 제 14항에 있어서,
상기 슬러리는 용매 중에 용해된 란탄 알콕시화물(lanthanum alkoxide), 리튬 알콕시화물 및 지르코늄 알콕시화물을 포함하는 제조 방법. - 제 15항에 있어서,
상기 오존이 풍부한 공기는 적어도 0.05ppm의 오존을 포함하는 제조 방법. - 제 15항에 있어서,
상기 습도가 낮은 공기는 상대 습도 약 30%보다 적은 제조 방법. - 제 13항에 있어서,
상기 슬러리는 전기 전도성 물질을 더 포함하는 제조 방법. - 제 19항에 있어서,
상기 전기 전도성 물질은 카본을 포함하는 제조 방법. - 제 13항에 있어서,
상기 슬러리는 이온 전도성 분말을 더 포함하는 제조 방법. - 제 21항에 있어서,
상기 이온 전도성 물질은 리튬 알루미늄 인산 게르마늄, 리튬 알루미늄 인산 티타늄, 리튬 란탄 산화 지르코늄, 리튬 란탄 카본 산화지르코늄 및 리튬 란탄 산화티타늄으로 이루어진 군으로부터 선택된 제조 방법. - 제 13항에 있어서,
상기 필름은 약 1마이크로미터 내지 약 1밀리미터의 두께를 갖는 제조 방법. - 제 13항에 있어서,
단계 (b) 후에, 리튬 란탄 산화지르코늄의 전구체 용액의 층을 상기 필름 상에 도포하는 것을 더 포함하는 제조 방법. - 제 13항에 있어서,
단계 (b) 후에, 상기 필름을 압축하는 것을 더 포함하는 제조 방법. - (a) 제 13항에 따른 고체상 양극을 제조하고,
(b) 상기 양극 상에 고체 전해질 분리층(separator layer)을 증착(depositing)하고,
(c) 리튬계 음극을 상기 전해질층에 증착하여 전지를 형성하는 것을 포함하는, 재충전가능한리튬 고체상 전지의 제조 방법. - 비정질, 무기질의, 이온 전도성 금속 산화물 내로 분산된 무기 전기 절연성 분말을 포함하는 고체 복합물 분리막.
- 제 27항에 있어서,
기판을 더 포함하는 것인 분리막. - 제 27항에 있어서,
상기 비정질 이온 전도성 금속 산화물은 리튬 란탄 산화지르코늄 및 리튬 카본 란탄 산화지르코늄으로 이루어진 군으로부터 선택된 제조 방법. - 제 27항에 있어서,
상기 무기 분말은 금속 또는 비금속 산화물, 카바이드, 인산염 또는 질화물(nitride)로부터 선택된 분리막. - 제 27항에 있어서,
상기 무기 분말은 리튬 란탄 산화지르코늄, 리튬 카본 란탄 산화지르코늄, 리튬 알루미늄 인화티타늄, 리튬 알루미늄 인화 게르마늄 및 리튬 란탄 산화티타늄으로 이루어진 군에서 선택된 분리막. - (a) 무기 전기 절연성 분말 및 비정질 무기 이온 전도성 금속 산화물의 전구체를 포함하는 슬러리를 준비하고,
(b) 상기 슬러리로부터 필름을 형성하고,
(c) 상기 필름을 가열하여, 상기 비정질 무기 이온 전도성 금속 산화물을 형성하되, 상기 무기 전기 절연성 분말은 상기 비정질 무기 이온 전도성 금속 산화물 내로 분산되는 것을 포함하는 고체 복합물 분리막의 제조 방법. - 제 32항에 있어서,
상기 이온 전도성 금속 산화물은 리튬 란탄 산화지르코늄 및 리튬 카본 란탄 산화지르코늄으로 이루어진 군에서 선택되는 제조 방법. - 제 32항에 있어서,
상기 무기 분말은 리튬 란탄 산화지르코늄, 리튬 카본 란탄 산화지르코늄, 리튬 알루미늄 인산티타늄, 리튬 알루미늄 인산게르마늄 및 리튬 란탄 산화티타늄으로 이루어진 군에서 선택된 제조 방법. - 제 32항에 있어서,
상기 무기 분말은 금속 또는 비금속 산화물, 카바이드, 인산염 또는 질화물로부터 선택되는 제조 방법. - 제 32항에 있어서,
단계 (b)는 전극 상에 상기 필름을 형성하는 것을 포함하는 제조 방법. - 제27항에 따른 분리막, 양극, 리튬 함유 음극을 포함하는 리튬 전지.
- 비정질 무기 이온 전도성 금속 산화물 내로 분산된 전극활물질(active electrode material)을 포함하는 고체상 복합물 전극.
- (a) 전극활물질 및 비정질 무기 이온 전도성 금속 산화물의 전구체를 포함하는 슬러리를 준비하고,
(b) 상기 슬러리로부터 필름을 형성하고,
(c) 상기 필름을 가열하여, 상기 비정질 무기 이온 전도성 금속 산화물을 형성하되, 상기 전극활물질은 상기 비정질 무기 이온 전도성 금속 산화물 내로 분산된 고체상 복합물 전극의 제조 방법.
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2013
- 2013-03-01 KR KR1020167028818A patent/KR101945968B1/ko active Active
- 2013-03-01 CN CN201380023413.5A patent/CN104321914B/zh active Active
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- 2013-03-01 CN CN201910697285.1A patent/CN110416478A/zh active Pending
- 2013-03-01 WO PCT/US2013/028672 patent/WO2013131005A2/en active Application Filing
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CN104321914B (zh) | 2019-08-13 |
KR101945968B1 (ko) | 2019-02-11 |
US20150333307A1 (en) | 2015-11-19 |
CN104321914A (zh) | 2015-01-28 |
KR20160124240A (ko) | 2016-10-26 |
CN110416478A (zh) | 2019-11-05 |
JP6173357B2 (ja) | 2017-08-02 |
WO2013131005A3 (en) | 2013-10-31 |
WO2013131005A2 (en) | 2013-09-06 |
US10333123B2 (en) | 2019-06-25 |
JP2015513768A (ja) | 2015-05-14 |
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