KR20120025518A - 나노다공성 세퍼레이터 상의 애노드 직접 코팅을 이용한 배터리 - Google Patents
나노다공성 세퍼레이터 상의 애노드 직접 코팅을 이용한 배터리 Download PDFInfo
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Abstract
Description
도 1은 세퍼레이터/애노드 어셈블리를 만들기 위한 단계의 하나의 버젼 후의 세퍼레이터/애노드 어셈블리의 단면도를 나타낸다.
도 2는 세퍼레이터/애노드 어셈블리를 만들기 위한 단계의 다른 버젼 후의 세퍼레이터/애노드 어셈블리의 단면도를 나타낸다.
36, 46: 제 1 애노드층 38, 48: 다공성 세퍼레이터층
47: 제 2 애노드층
Claims (39)
- 전기적 전류 생산 전지에 이용하기 위한 세퍼레이터/애노드 어셈블리로서,
상기 어셈블리는 제 1 애노드층과 제 2 애노드층 사이에 개재되는 애노드 전류 컬렉터층과, 상기 애노드 전류 컬렉터층에 대향하는 제 1 애노드층의 측상에 다공성 세퍼레이터층을 포함하고, 상기 제 1 애노드층은 세퍼레이터층 상에 직접 코팅되는, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 제 2 애노드층 상에 어떤 세퍼레이터층도 직접 코팅되지 않는, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 세퍼레이터층의 최상단 표면에 인접한 제 1 애노드층의 표면은 세퍼레이터층의 최상단 표면의 외형과 부합하는 외형을 갖고, 상기 세퍼레이터층의 최상단 표면의 외형은 제 1 애노드층의 세퍼레이터층 상에서의 직접 코팅 이전과 동일한, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 제 1 애노드층은 전기 활성 입자 및 전기적 도전성 입자로 구성되는 그룹으로부터 선택된 애노드 입자를 포함하고, 상기 애노드 입자는 세퍼레이터층에 존재하지 않는, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 세퍼레이터층은 세퍼레이터 입자를 포함하고, 상기 세퍼레이터 입자는 제 1 애노드층에 존재하지 않는, 세퍼레이터/애노드 어셈블리. - 청구항 5에 있어서,
상기 세퍼레이터 입자는 무기 산화물 입자, 무기 질화물 입자, 무기 탄산염 입자, 무기 황산염 입자 및 폴리머 입자로 구성되는 그룹으로부터 선택되는, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 세퍼레이터층은 0.2 미크론 미만의 평균 기공 직경을 갖는 기공을 포함하는, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 세퍼레이터층은 0.1 미크론 미만의 평균 기공 직경을 갖는 기공을 포함하는, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 세퍼레이터층의 두께는 9 미크론 미만인, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 세퍼레이터층의 두께는 6 미크론 미만인, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 세퍼레이터층은 크세로겔 멤브레인으로 이루어지는, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 세퍼레이터층은 알루미늄 베마이트로 이루어지는, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 세퍼레이터층은 200℃에서 치수 안정성을 갖는 내열 세퍼레이터층인, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 애노드 전류 컬렉터층은 세퍼레이터층의 반대의 측상의 제 1 애노드층 상에 직접 코팅되는, 세퍼레이터/애노드 어셈블리. - 청구항 14에 있어서,
상기 애노드 전류 컬렉터층은 전기적 도전성 금속, 전기적 도전성 카본 및 전기적 도전성 폴리머로 구성되는 그룹으로부터 선택된 전기적 도전성 재료로 이루어지는, 세퍼레이터/애노드 어셈블리. - 청구항 14에 있어서,
상기 애노드 전류 컬렉터층은 구리층 및 니켈층으로 구성되는 그룹으로부터 선택된 금속층으로 이루어지는, 세퍼레이터/애노드 어셈블리. - 청구항 16에 있어서,
상기 금속층의 두께는 3 미크론 미만인, 세퍼레이터/애노드 어셈블리. - 청구항 15에 있어서,
상기 전기적 도전성 재료는 구리를 포함하는, 세퍼레이터/애노드 어셈블리. - 청구항 14에 있어서,
상기 애노드 전류 컬렉터층은 제 1 애노드층 상에 직접 코팅된 2개 이상의 층을 포함하고, 상기 2개 이상의 층 중 적어도 하나는 카본을 포함하는 전기적 도전성 재료로 이루어지는, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 애노드 전류 컬렉터층의 두께는 3 미크론 미만인, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 애노드 전류 컬렉터층의 두께는 0.5 내지 1.5 미크론인, 세퍼레이터/애노드 어셈블리. - 청구항 1에 있어서,
상기 제 2 애노드층은 제 1 애노드층의 반대측 상의 애노드 전류 컬렉터층 상에 직접 코팅되는, 세퍼레이터/애노드 어셈블리. - 전기적 전류 생산 전지에 이용하기 위한 세퍼레이터/애노드 어셈블리로서,
상기 세퍼레이터/애노드 어셈블리는 애노드층 및 상기 애노드층의 일측상의 다공성 세퍼레이터층을 포함하고, 상기 애노드층은 세퍼레이터층 상에 직접 코팅되는, 세퍼레이터/애노드 어셈블리. - 청구항 23에 있어서,
상기 애노드층은 리튬으로 이루어지는, 세퍼레이터/애노드 어셈블리. - 청구항 1의 세퍼레이터/애노드 어셈블리를 포함하는 배터리.
- 청구항 25에 있어서,
상기 배터리는 리튬 배터리인, 배터리. - 청구항 23의 세퍼레이터/애노드 어셈블리를 포함하는 배터리.
- 청구항 27에 있어서,
상기 배터리는 리튬 배터리인, 배터리. - 전기적 전류 생산 전지에 이용하기 위한 세퍼레이터/애노드 어셈블리의 제조 방법으로서,
(a) 다공성 세퍼레이터층을 제공하는 단계;
(b) 상기 세퍼레이터층 상에 직접 제 1 애노드층을 코팅하는 단계; 및
(c) 상기 세퍼레이터/애노드 어셈블리를 제조하기 위해 제 1 애노드층 상에 직접 하나 이상의 전류 컬렉터층을 코팅하는 단계를 포함하는, 세퍼레이터/애노드 어셈블리의 제조 방법. - 청구항 29에 있어서,
상기 단계 (c) 후에, 상기 하나 이상의 애노드 전류 컬렉터층 상에 직접 제 2 애노드층을 코팅하는 단계 (d)를 더 포함하는, 세퍼레이터/애노드 어셈블리의 제조 방법. - 청구항 29에 있어서,
상기 단계 (a)는 기판 상에 다공성 세퍼레이터를 코팅하는 단계를 포함하는, 세퍼레이터/애노드 어셈블리의 제조 방법. - 청구항 31에 있어서,
상기 기판은 릴리스 기판이고, 상기 단계 (c) 후에, 상기 세퍼레이터/애노드 어셈블리를 형성하기 위해 세퍼레이터층으로부터 기판을 박리하는 단계 (d)를 더 포함하는, 세퍼레이터/애노드 어셈블리의 제조 방법. - 청구항 32에 있어서,
상기 단계 (c) 이후에 그리고 상기 단계 (d) 이전에, 상기 하나 이상의 애노드 전류 컬렉터층 상에 직접 제 2 애노드층을 코팅하는 단계를 더 포함하는, 세퍼레이터/애노드 어셈블리의 제조 방법. - 청구항 31에 있어서,
상기 기판은 다공성 기판인, 세퍼레이터/애노드 어셈블리의 제조 방법. - 청구항 34에 있어서,
상기 다공성 기판은 다공성 폴리머 필름 및 다공성 부직의 폴리머 파이버 기판으로 구성되는 그룹으로부터 선택되는, 세퍼레이터/애노드 어셈블리의 제조 방법. - 청구항 34에 있어서,
상기 단계 (c) 후에, 상기 하나 이상의 애노드 전류 컬렉터층 상에 직접 제 2 애노드층을 코팅하는 단계를 더 포함하는, 세퍼레이터/애노드 어셈블리의 제조 방법. - 청구항 29에 있어서,
상기 단계 (c)의 상기 하나 이상의 애노드 전류 컬렉터층은 금속층으로 이루어지고, 상기 금속층의 두께는 3 미크론 미만인, 세퍼레이터/애노드 어셈블리의 제조 방법. - 청구항 29에 있어서,
상기 세퍼레이터층은 0.1 미크론 미만의 평균 기공 직경을 갖는 기공을 포함하는, 세퍼레이터/애노드 어셈블리의 제조 방법. - 청구항 29에 있어서,
상기 세퍼레이터층의 두께는 6 미크론 미만인, 세퍼레이터/애노드 어셈블리의 제조 방법.
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