KR20040075866A - 포토리소그래피용 스핀-온 무반사 코팅 - Google Patents
포토리소그래피용 스핀-온 무반사 코팅 Download PDFInfo
- Publication number
- KR20040075866A KR20040075866A KR10-2004-7007489A KR20047007489A KR20040075866A KR 20040075866 A KR20040075866 A KR 20040075866A KR 20047007489 A KR20047007489 A KR 20047007489A KR 20040075866 A KR20040075866 A KR 20040075866A
- Authority
- KR
- South Korea
- Prior art keywords
- grams
- spin
- composition
- added
- propanol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000006117 anti-reflective coating Substances 0.000 title abstract description 50
- 238000000206 photolithography Methods 0.000 title abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 218
- 239000000203 mixture Substances 0.000 claims abstract description 159
- 239000002250 absorbent Substances 0.000 claims abstract description 154
- 230000002745 absorbent Effects 0.000 claims abstract description 154
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 114
- 150000001875 compounds Chemical class 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 67
- -1 electronic device Substances 0.000 claims abstract description 55
- 229920000642 polymer Polymers 0.000 claims abstract description 40
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 25
- 239000000376 reactant Substances 0.000 claims abstract description 17
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910000077 silane Inorganic materials 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000000243 solution Substances 0.000 claims description 331
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 284
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 177
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 117
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 claims description 116
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 112
- FYEHYMARPSSOBO-UHFFFAOYSA-N Aurin Chemical compound C1=CC(O)=CC=C1C(C=1C=CC(O)=CC=1)=C1C=CC(=O)C=C1 FYEHYMARPSSOBO-UHFFFAOYSA-N 0.000 claims description 89
- JCJNNHDZTLRSGN-UHFFFAOYSA-N anthracen-9-ylmethanol Chemical compound C1=CC=C2C(CO)=C(C=CC=C3)C3=CC2=C1 JCJNNHDZTLRSGN-UHFFFAOYSA-N 0.000 claims description 88
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 69
- 229910017604 nitric acid Inorganic materials 0.000 claims description 69
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 64
- CCGWVKHKHWKOIQ-UHFFFAOYSA-N [2-hydroxy-4-(3-triethoxysilylpropoxy)phenyl]-phenylmethanone Chemical compound OC1=CC(OCCC[Si](OCC)(OCC)OCC)=CC=C1C(=O)C1=CC=CC=C1 CCGWVKHKHWKOIQ-UHFFFAOYSA-N 0.000 claims description 52
- 239000011521 glass Substances 0.000 claims description 44
- 238000010521 absorption reaction Methods 0.000 claims description 33
- 239000004310 lactic acid Substances 0.000 claims description 32
- 235000014655 lactic acid Nutrition 0.000 claims description 32
- 239000002904 solvent Substances 0.000 claims description 32
- 239000002253 acid Substances 0.000 claims description 30
- OSOGUZMKNNPEDS-UHFFFAOYSA-N 2-triethoxysilylacetic acid Chemical compound CCO[Si](CC(O)=O)(OCC)OCC OSOGUZMKNNPEDS-UHFFFAOYSA-N 0.000 claims description 28
- 239000011541 reaction mixture Substances 0.000 claims description 26
- 238000000576 coating method Methods 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- RGCKGOZRHPZPFP-UHFFFAOYSA-N alizarin Chemical compound C1=CC=C2C(=O)C3=C(O)C(O)=CC=C3C(=O)C2=C1 RGCKGOZRHPZPFP-UHFFFAOYSA-N 0.000 claims description 14
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 11
- XGWFJBFNAQHLEF-UHFFFAOYSA-N 9-anthroic acid Chemical compound C1=CC=C2C(C(=O)O)=C(C=CC=C3)C3=CC2=C1 XGWFJBFNAQHLEF-UHFFFAOYSA-N 0.000 claims description 8
- 239000002210 silicon-based material Substances 0.000 claims description 7
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 claims description 7
- 150000001412 amines Chemical class 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 claims description 6
- 125000003545 alkoxy group Chemical group 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims description 5
- 125000003277 amino group Chemical group 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 4
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 4
- GUEIZVNYDFNHJU-UHFFFAOYSA-N quinizarin Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C(O)=CC=C2O GUEIZVNYDFNHJU-UHFFFAOYSA-N 0.000 claims description 4
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims description 4
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 claims description 3
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 claims description 3
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 claims description 3
- NOKUWSXLHXMAOM-UHFFFAOYSA-N hydroxy(phenyl)silicon Chemical class O[Si]C1=CC=CC=C1 NOKUWSXLHXMAOM-UHFFFAOYSA-N 0.000 claims description 3
- 239000005055 methyl trichlorosilane Substances 0.000 claims description 3
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims description 3
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 3
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 3
- AFILDYMJSTXBAR-UHFFFAOYSA-N (4-chlorophenyl)-triethoxysilane Chemical compound CCO[Si](OCC)(OCC)C1=CC=C(Cl)C=C1 AFILDYMJSTXBAR-UHFFFAOYSA-N 0.000 claims description 2
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 claims description 2
- IKBFHCBHLOZDKH-UHFFFAOYSA-N 2-chloroethyl(triethoxy)silane Chemical compound CCO[Si](CCCl)(OCC)OCC IKBFHCBHLOZDKH-UHFFFAOYSA-N 0.000 claims description 2
- CASYTJWXPQRCFF-UHFFFAOYSA-N 2-chloroethyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCl CASYTJWXPQRCFF-UHFFFAOYSA-N 0.000 claims description 2
- NPVQBEIMNWDKEU-UHFFFAOYSA-N chloromethoxy-dimethoxy-phenylsilane Chemical compound ClCO[Si](OC)(OC)C1=CC=CC=C1 NPVQBEIMNWDKEU-UHFFFAOYSA-N 0.000 claims description 2
- ZDOBWJOCPDIBRZ-UHFFFAOYSA-N chloromethyl(triethoxy)silane Chemical compound CCO[Si](CCl)(OCC)OCC ZDOBWJOCPDIBRZ-UHFFFAOYSA-N 0.000 claims description 2
- FPOSCXQHGOVVPD-UHFFFAOYSA-N chloromethyl(trimethoxy)silane Chemical compound CO[Si](CCl)(OC)OC FPOSCXQHGOVVPD-UHFFFAOYSA-N 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 238000010790 dilution Methods 0.000 claims description 2
- 239000012895 dilution Substances 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000005054 phenyltrichlorosilane Substances 0.000 claims description 2
- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 claims description 2
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 claims description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 2
- 239000005052 trichlorosilane Substances 0.000 claims description 2
- 125000004181 carboxyalkyl group Chemical group 0.000 claims 2
- 150000002484 inorganic compounds Chemical class 0.000 claims 2
- DQMZLTXERSFNPB-UHFFFAOYSA-N primidone Chemical compound C=1C=CC=CC=1C1(CC)C(=O)NCNC1=O DQMZLTXERSFNPB-UHFFFAOYSA-N 0.000 claims 2
- JJZKNYBVTBXDDM-UHFFFAOYSA-N Cl[Si](OCC)(OCC)OCC.Cl[Si](OC)(OC)OC Chemical compound Cl[Si](OCC)(OCC)OCC.Cl[Si](OC)(OC)OC JJZKNYBVTBXDDM-UHFFFAOYSA-N 0.000 claims 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 1
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 claims 1
- 150000003377 silicon compounds Chemical class 0.000 claims 1
- 239000011877 solvent mixture Substances 0.000 claims 1
- 125000001424 substituent group Chemical group 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 121
- 238000003786 synthesis reaction Methods 0.000 abstract description 120
- 239000000126 substance Substances 0.000 abstract description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 696
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 465
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 238
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 232
- 239000008367 deionised water Substances 0.000 description 146
- 229910021641 deionized water Inorganic materials 0.000 description 146
- 238000010992 reflux Methods 0.000 description 79
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 57
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 54
- 239000010410 layer Substances 0.000 description 53
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 48
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 42
- 229920002120 photoresistant polymer Polymers 0.000 description 33
- 230000003287 optical effect Effects 0.000 description 28
- 238000005516 engineering process Methods 0.000 description 26
- UYWOUTIAAZDBSD-UHFFFAOYSA-N 2-[diethoxy(propyl)silyl]oxypropanoic acid Chemical compound CCC[Si](OCC)(OCC)OC(C)C(O)=O UYWOUTIAAZDBSD-UHFFFAOYSA-N 0.000 description 24
- 150000002576 ketones Chemical class 0.000 description 24
- AXEFESAPMLYPEF-UHFFFAOYSA-N 3-triethoxysilylpropanoic acid Chemical compound CCO[Si](OCC)(OCC)CCC(O)=O AXEFESAPMLYPEF-UHFFFAOYSA-N 0.000 description 23
- 239000004305 biphenyl Substances 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 206010001513 AIDS related complex Diseases 0.000 description 8
- 210000002945 adventitial reticular cell Anatomy 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000000975 dye Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910002651 NO3 Inorganic materials 0.000 description 7
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 7
- GSHQRSSWWJBTQA-UHFFFAOYSA-N 2-trimethoxysilylacetic acid Chemical compound CO[Si](OC)(OC)CC(O)=O GSHQRSSWWJBTQA-UHFFFAOYSA-N 0.000 description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 230000008033 biological extinction Effects 0.000 description 6
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 6
- 230000000704 physical effect Effects 0.000 description 6
- 230000002194 synthesizing effect Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 5
- WAVCGEOLYMSNKB-UHFFFAOYSA-N 2-[dimethoxy(propyl)silyl]oxyacetic acid Chemical compound CCC[Si](OC)(OC)OCC(O)=O WAVCGEOLYMSNKB-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-M Lactate Chemical compound CC(O)C([O-])=O JVTAAEKCZFNVCJ-UHFFFAOYSA-M 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 210000002381 plasma Anatomy 0.000 description 4
- KLNMQYHQWUWCPG-UHFFFAOYSA-N 2-anthracen-9-ylethanol Chemical compound C1=CC=C2C(CCO)=C(C=CC=C3)C3=CC2=C1 KLNMQYHQWUWCPG-UHFFFAOYSA-N 0.000 description 3
- QSWUCIYIVJMUMB-UHFFFAOYSA-N 3-anthracen-9-ylpropan-1-ol Chemical compound C1=CC=C2C(CCCO)=C(C=CC=C3)C3=CC2=C1 QSWUCIYIVJMUMB-UHFFFAOYSA-N 0.000 description 3
- LBXBOYSBAODJMA-UHFFFAOYSA-N C(=O)(O)C(CC)O[Si](OCCC)(OCCC)C Chemical compound C(=O)(O)C(CC)O[Si](OCCC)(OCCC)C LBXBOYSBAODJMA-UHFFFAOYSA-N 0.000 description 3
- RGJMEGZNFRDFKE-UHFFFAOYSA-N C(=O)(O)C(CCC)O[Si](OCCCC)(OCCCC)CC Chemical compound C(=O)(O)C(CCC)O[Si](OCCCC)(OCCCC)CC RGJMEGZNFRDFKE-UHFFFAOYSA-N 0.000 description 3
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 229940116333 ethyl lactate Drugs 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000010979 pH adjustment Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 2
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- PBKOMVQAHXJUCT-UHFFFAOYSA-N C(=O)(O)C(C)O[Si](OCC)(OCC)CCCCC Chemical compound C(=O)(O)C(C)O[Si](OCC)(OCC)CCCCC PBKOMVQAHXJUCT-UHFFFAOYSA-N 0.000 description 2
- LZGIKCVIIIMPED-UHFFFAOYSA-N C(=O)(O)CO[Si](OC)(OC)CC Chemical compound C(=O)(O)CO[Si](OC)(OC)CC LZGIKCVIIIMPED-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 125000000468 ketone group Chemical group 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
- KBXJHRABGYYAFC-UHFFFAOYSA-N octaphenylsilsesquioxane Chemical compound O1[Si](O2)(C=3C=CC=CC=3)O[Si](O3)(C=4C=CC=CC=4)O[Si](O4)(C=5C=CC=CC=5)O[Si]1(C=1C=CC=CC=1)O[Si](O1)(C=5C=CC=CC=5)O[Si]2(C=2C=CC=CC=2)O[Si]3(C=2C=CC=CC=2)O[Si]41C1=CC=CC=C1 KBXJHRABGYYAFC-UHFFFAOYSA-N 0.000 description 2
- 239000003444 phase transfer catalyst Substances 0.000 description 2
- FABOKLHQXVRECE-UHFFFAOYSA-N phenyl(tripropoxy)silane Chemical compound CCCO[Si](OCCC)(OCCC)C1=CC=CC=C1 FABOKLHQXVRECE-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229940090181 propyl acetate Drugs 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- NHGXDBSUJJNIRV-UHFFFAOYSA-M tetrabutylammonium chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)CCCC NHGXDBSUJJNIRV-UHFFFAOYSA-M 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- PRPINYUDVPFIRX-UHFFFAOYSA-N 1-naphthaleneacetic acid Chemical compound C1=CC=C2C(CC(=O)O)=CC=CC2=C1 PRPINYUDVPFIRX-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- ZEYHEAKUIGZSGI-UHFFFAOYSA-N 4-methoxybenzoic acid Chemical compound COC1=CC=C(C(O)=O)C=C1 ZEYHEAKUIGZSGI-UHFFFAOYSA-N 0.000 description 1
- LCSVPTJQHZRSNC-UHFFFAOYSA-N C(=O)(O)C(C)O[Si](OCC)(OCC)CCCC Chemical compound C(=O)(O)C(C)O[Si](OCC)(OCC)CCCC LCSVPTJQHZRSNC-UHFFFAOYSA-N 0.000 description 1
- XMZKJEYAWLRANY-UHFFFAOYSA-N CO[Si]OC.CO[Si].C(C)O[Si](OCC)OCC.C(C)O[Si]OCC.C(C)O[Si].[Si] Chemical group CO[Si]OC.CO[Si].C(C)O[Si](OCC)OCC.C(C)O[Si]OCC.C(C)O[Si].[Si] XMZKJEYAWLRANY-UHFFFAOYSA-N 0.000 description 1
- 240000004307 Citrus medica Species 0.000 description 1
- 235000019499 Citrus oil Nutrition 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GJGCNIKSFUGSPT-UHFFFAOYSA-N [2-(chloromethyl)phenyl]-trimethoxysilane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1CCl GJGCNIKSFUGSPT-UHFFFAOYSA-N 0.000 description 1
- PZAGQUOSOTUKEC-UHFFFAOYSA-N acetic acid;sulfuric acid Chemical compound CC(O)=O.OS(O)(=O)=O PZAGQUOSOTUKEC-UHFFFAOYSA-N 0.000 description 1
- 150000004075 acetic anhydrides Chemical class 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229920005603 alternating copolymer Polymers 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- RBFDCQDDCJFGIK-UHFFFAOYSA-N arsenic germanium Chemical compound [Ge].[As] RBFDCQDDCJFGIK-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- GONOPSZTUGRENK-UHFFFAOYSA-N benzyl(trichloro)silane Chemical compound Cl[Si](Cl)(Cl)CC1=CC=CC=C1 GONOPSZTUGRENK-UHFFFAOYSA-N 0.000 description 1
- KXHPPCXNWTUNSB-UHFFFAOYSA-M benzyl(trimethyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)CC1=CC=CC=C1 KXHPPCXNWTUNSB-UHFFFAOYSA-M 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- JEZFASCUIZYYEV-UHFFFAOYSA-N chloro(triethoxy)silane Chemical compound CCO[Si](Cl)(OCC)OCC JEZFASCUIZYYEV-UHFFFAOYSA-N 0.000 description 1
- CBVJWBYNOWIOFJ-UHFFFAOYSA-N chloro(trimethoxy)silane Chemical compound CO[Si](Cl)(OC)OC CBVJWBYNOWIOFJ-UHFFFAOYSA-N 0.000 description 1
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 1
- 125000000068 chlorophenyl group Chemical group 0.000 description 1
- 239000010500 citrus oil Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- OSXYHAQZDCICNX-UHFFFAOYSA-N dichloro(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](Cl)(Cl)C1=CC=CC=C1 OSXYHAQZDCICNX-UHFFFAOYSA-N 0.000 description 1
- KTQYJQFGNYHXMB-UHFFFAOYSA-N dichloro(methyl)silicon Chemical compound C[Si](Cl)Cl KTQYJQFGNYHXMB-UHFFFAOYSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- VDCSGNNYCFPWFK-UHFFFAOYSA-N diphenylsilane Chemical class C=1C=CC=CC=1[SiH2]C1=CC=CC=C1 VDCSGNNYCFPWFK-UHFFFAOYSA-N 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- ADLWTVQIBZEAGJ-UHFFFAOYSA-N ethoxy-methyl-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](C)(OCC)C1=CC=CC=C1 ADLWTVQIBZEAGJ-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 239000005048 methyldichlorosilane Substances 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- ILUJQPXNXACGAN-UHFFFAOYSA-N ortho-methoxybenzoic acid Natural products COC1=CC=CC=C1C(O)=O ILUJQPXNXACGAN-UHFFFAOYSA-N 0.000 description 1
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- INUOIYMEJLOQFN-UHFFFAOYSA-N tributoxy(phenyl)silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)C1=CC=CC=C1 INUOIYMEJLOQFN-UHFFFAOYSA-N 0.000 description 1
- KGWNTHHPMKEAIK-UHFFFAOYSA-N trifluoro(phenyl)silane Chemical compound F[Si](F)(F)C1=CC=CC=C1 KGWNTHHPMKEAIK-UHFFFAOYSA-N 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/006—Anti-reflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Polymers & Plastics (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Silicon Polymers (AREA)
- Paints Or Removers (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (42)
- 적어도 하나의 무기계 화합물, 적어도 하나의 합체 가능 유기 흡수 화합물 및 적어도 하나의 pH 조절제(pH tuning agent)를 포함하는 흡수 스핀-온-글래스 조성물.
- 제1항에 있어서,흡수 화합물이 375㎚보다 적은 파장에서 적어도 약 5㎚ 넓이의 파장범위에 걸처 강하게 빛을 흡수하는 흡수 스핀-온-글래스 조성물.
- 제1항에 있어서,흡수 화합물이 375㎚보다 적은 파장에서 적어도 약 10㎚ 넓이의 파장범위에 걸처 강하게 빛을 흡수하는 흡수 스핀-온-글래스 조성물.
- 제2항에 있어서,상기 파장범위가 약 260㎚보다 적은 파장에 있는 흡수 스핀-온-글래스 조성물.
- 제1항에 있어서,흡수 화합물이 적어도 하나의 벤젠 고리 및 하이드록실기, 아민기, 카르복실산기 및 치환된 실릴기로 이루어진 그룹으로부터 선택된 반응기를 포함하는 흡수 스핀-온-글래스 조성물.
- 제5항에 있어서,흡수 화합물이 둘 또는 그 이상의 벤젠 고리를 포함하는 흡수 스핀-온-글래스 조성물.
- 제6항에 있어서,둘 또는 그 이상의 벤젠 고리가 융합되어진 흡수 스핀-온-글래스 조성물.
- 제5항에 있어서,유기 흡수 화합물이 안트라플라브산, 9-안트라센 카르복실산, 9-안트라센 메탄올, 알리자린, 퀴니자린, 프리물린, 2-하이드록시-4(3-트리에톡시실릴프로폭시)-디페닐케톤, 로졸산, 트리에톡시실릴프로필-1,8-나프탈이미드, 9-안트라센 카르복시-알킬 트리에톡시실란, 페닐트리에톡시실란, 10-페난트렌 카르복시-메틸 트리에톡시실란, 4-페닐아조페놀, 4-에톡시페닐아조벤젠-4-카르복시-메틸 트리에톡시실란, 4-메톡시페닐아조벤젠-4-카르복시-메틸 트리에톡시실란 및 이들의 혼합물을 포함하는 흡수 화합물을 포함하는 흡수 스핀-온-글래스 조성물.
- 제1항에 있어서,무기계 화합물이 실리콘계 화합물을 포함하는 흡수 스핀-온-글래스 조성물.
- 제9항에 있어서,실리콘계 화합물이 폴리머를 포함하는 흡수 스핀-온-글래스 조성물.
- 제10항에 있어서,폴리머가 메틸실록산, 메틸실세스퀴녹산, 페닐실록산, 페닐실레스퀴녹산, 메틸페닐실록산, 메틸페닐실세스퀴녹산, 실리케이트 폴리머, 실라잔 폴리머 및 이들의 혼합물을 포함하는 흡수 스핀-온-글래스 조성물.
- 제10항에 있어서,폴리머가 하이드로겐실록산, 하이드로겐실세스퀴녹산, 올가노하이드리도실록산 및 올가노하이드리도실세스퀴녹산 폴리머; 하이드로겐실세스퀴녹산 및 알콕시하이드리도실록산 또는 하이드록시하이드리도실록산 및 이들의 혼합물의 코폴리머를 포함하는 흡수 스핀-온-글래스 조성물.
- 제10항에 있어서,폴리머가 (H0-1.0SiO1.5-2.0)x(여기서 x는 약 4보다 더 크다) 및 (H0-1.0SiO1.5-2.0)n(R0-1.0SiO1.5-2.0)m(여기서 m은 0보다 크고 n 및 m의 합은 약 4 부터 약 5000까지이고 R은 C1-C20알킬기 또는 C6-C12아릴기이다)을 포함하는 일반식의 폴리머인 흡수 스핀-온-글래스 조성물.
- 제1항에 있어서,pH 조절제가 물을 포함하는 흡수 스핀-온-글래스 조성물.
- 제1항에 있어서,pH 조절제가 염기를 포함하는 흡수 스핀-온-글래스 조성물.
- 제15항에 있어서,염기가 아민을 포함하는 흡수 스핀-온-글래스 조성물.
- 제16항에 있어서,아민이 아민계 올리고머를 포함하는 흡수 스핀-온-글래스 조성물.
- 제1항에 있어서,pH 조절제가 산을 포함하는 흡수 스핀-온-글래스 조성물.
- 제1항의 흡수 스핀-온-글래스 조성물과 용매 또는 용매 혼합물을 포함하는코팅 용액.
- 제19항에 있어서,용액에 약 0.5 중량% 내지 약 20중량의 흡수 스핀-온-글래스 조성물이 있는 코팅 용액.
- 적어도 하나의 실란 반응물, 적어도 하나의 합체 가능 유기 흡수 화합물, 적어도 하나의 pH 조절제, 산/물 혼합물 및 하나 또는 그 이상의 용매를 혼합하여 반응 혼합물을 형성하는 단계; 및반응 혼합물을 가열하여 스핀-온 조성물을 형성하는 단계를 포함하는 스핀-온 조성물의 제조방법.
- 적어도 하나의 실란 반응물, 적어도 하나의 합체 가능 유기 흡수 화합물, 적어도 하나의 pH 조절제, 및 하나 또는 그 이상의 용매를 혼합하여 반응 혼합물을 형성하는 단계; 및반응 혼합물을 가열하여 스핀-온 조성물을 형성하는 단계를 포함하고, 상기 pH 조절제는 적어도 하나의 산 및 물을 포함하는 스핀-온 조성물의 제조방법.
- 제21항 또는 제22항에 있어서,적어도 하나의 유기 흡수 화합물이 적어도 하나의 벤젠 고리와, 하이드록실기, 아민기, 카르복실산기 및 알콕시기 및 할로겐 원자를 포함하는 적어도 하나의 치환기에 결합된 실리콘을 갖는 치환된 실릴기를 포함하는 반응기를 포함하는 스핀-온 조성물의 제조방법.
- 제21항 또는 제22항에 있어서,적어도 하나의 유기 흡수 화합물이 안트라플라브산, 9-안트라센 카르복실산, 9-안트라센 메탄올, 알리자린, 퀴니자린, 프리물린, 2-하이드록시-4(3-트리에톡시실릴프로폭시)-디페닐케톤, 로졸산, 트리에톡시실릴프로필-1,8-나프탈이미드, 9-안트라센 카르복시-알킬 트리에톡시실란, 페닐트리에톡시실란, 10-페난트렌 카르복시-메틸 트리에톡시실란, 4-페닐아조페놀, 4-에톡시페닐아조벤젠-4-카르복시-메틸 트리에톡시실란, 4-메톡시페닐아조벤젠-4-카르복시-메틸 트리에톡시실란 및 이들의 혼합물로 이루어진 그룹으로부터 선택된 흡수 화합물을 포함하는 스핀-온 조성물의 제조방법.
- 제21항 또는 제22항에 있어서,적어도 하나의 실란 반응물이 트리에톡시실란, 테트라에톡시실란, 메틸트리에톡시실란, 디메틸디에톡시실란, 테트라메톡시실란, 메틸트리메톡시실란, 트리메톡시실란, 디메틸디메톡시실란, 페닐트리에톡시실란, 페닐트리메톡시실란, 디페닐디에톡시실란, 디페닐디메톡시실란, 트리클로로실란, 메틸트리클로로실란, 에틸트리클로로실란, 페닐트리클로로실란, 테트라클로로실란, 클로로트리에톡시실란, 클로로트리메톡시실란, 클로로메틸트리에톡시실란, 클로로에틸트리에톡시실란, 클로로페닐트리에톡시실란, 클로로메틸트리메톡시실란, 클로로에틸트리메톡시실란, 및 클로로페닐트리메톡시실란을 포함하는 스핀-온 조성물의 제조방법.
- 제21항에 있어서,pH 조절제가 물을 포함하는 스핀-온 조성물의 제조방법.
- 제21항에 있어서,pH 조절제가 염기를 포함하는 스핀-온 조성물의 제조방법.
- 제27항에 있어서,pH 조절제가 아민을 포함하는 스핀-온 조성물의 제조방법.
- 제21항에 있어서,pH 조절제가 산을 포함하는 스핀-온 조성물의 제조방법.
- 제21항에 있어서,산/물 혼합물이 질산, 젖산 또는 아세트산을 포함하는 스핀-온 조성물의 제조방법.
- 적어도 하나의 알콕시실란 또는 할로실란; 적어도 하나의 합체 가능 유기 흡수 화합물; 적어도 하나의 pH 조절제; 산/물 혼합물; 및 하나 또는 그 이상의 용매를 혼합하여 반응 혼합물을 형성하는 단계; 및반응 혼합물을 가열하여 스핀-온 폴리머를 형성하는 단계를 포함하는 스핀-온 물질을 함유하는 코팅 용액의 제조방법.
- 적어도 하나의 알콕시실란 또는 할로실란; 적어도 하나의 합체 가능 유기 흡수 화합물; 적어도 하나의 pH 조절제; 및 하나 또는 그 이상의 용매를 혼합하여 반응 혼합물을 형성하는 단계; 및반응 혼합물을 가열하여 스핀-온 폴리머를 형성하는 단계를 포함하고, 상기 pH 조절제가 적어도 하나의 산 및 물을 포함하는 스핀-온 물질을 함유하는 코팅 용액의 제조방법.
- 제31항 또는 제32항에 있어서,스핀-온 조성물에 하나 또는 그 이상의 희석 용매를 첨가하여 코팅 용액을 제조하는 단계를 더 포함하는 스핀-온 물질을 함유하는 코팅 용액의 제조방법.
- 레지스트 물질에 짝지워진 제1항의 스핀-온 조성물을 포함하는 층상 물질.
- 레지스트 물질에 짝지워진 제19항의 코팅 용액을 포함하는 층상 물질.
- 제34항에 있어서,레지스트 물질이 스핀-온 조성물에 대해 적어도 85°의 각도에 있는 현상 라인을 포함하는 층상 물질.
- 제35항에 있어서,레지스트 물질이 코팅 용액에 대해 적어도 85°의 각도에 있는 현상 라인을 포함하는 층상 물질.
- 제1항의 스핀-온 조성물을 포함하는 반도체.
- 제19항의 코팅 용액을 포함하는 반도체.
- 제1항에 있어서,스핀-온 조성물이 적어도 부분적으로 제거되도록 설계되어진 조성물.
- 제1항에 있어서,pH 조절제가 레지스트 물질 및 스핀-온 조성물 사이의 양립성을 향상시키도록 선택되는 화합물을 포함하는 조성물.
- 제41항에 있어서,레지스트 물질이 157㎚, 193㎚, 248㎚ 및 365㎚를 포함하는 파장 범위에 걸처 빛을 흡수하는 조성물.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2001/045306 WO2003044600A1 (en) | 2001-11-15 | 2001-11-15 | Spin-on anti-reflective coatings for photolithography |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020087022951A Division KR100917241B1 (ko) | 2008-09-19 | 2001-11-15 | 포토리소그래피용 스핀-온 무반사 코팅 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20040075866A true KR20040075866A (ko) | 2004-08-30 |
Family
ID=21743044
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2004-7007486A Withdrawn KR20040066124A (ko) | 2001-11-15 | 2001-11-15 | 포토리소그라피용 스핀온 반사 방지 피막 |
KR10-2004-7007489A Ceased KR20040075866A (ko) | 2001-11-15 | 2001-11-15 | 포토리소그래피용 스핀-온 무반사 코팅 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2004-7007486A Withdrawn KR20040066124A (ko) | 2001-11-15 | 2001-11-15 | 포토리소그라피용 스핀온 반사 방지 피막 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8344088B2 (ko) |
EP (1) | EP1472574A4 (ko) |
JP (1) | JP4381143B2 (ko) |
KR (2) | KR20040066124A (ko) |
CN (1) | CN1606713B (ko) |
AU (1) | AU2002227106A1 (ko) |
WO (1) | WO2003044600A1 (ko) |
Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2374944A1 (en) | 1999-06-10 | 2000-12-21 | Nigel Hacker | Spin-on-glass anti-reflective coatings for photolithography |
US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
KR20040066124A (ko) | 2001-11-15 | 2004-07-23 | 허니웰 인터내셔널 인코포레이티드 | 포토리소그라피용 스핀온 반사 방지 피막 |
NL1020396C2 (nl) * | 2002-04-16 | 2003-10-17 | Amc Amsterdam | Manipulator voor een instrument voor minimaal-invasieve chirurgie, alsmede een dergelijk instrument. |
DE10227807A1 (de) * | 2002-06-21 | 2004-01-22 | Honeywell Specialty Chemicals Seelze Gmbh | Silylalkylester von Anthracen- und Phenanthrencarbonsäuren |
KR101156200B1 (ko) * | 2003-05-23 | 2012-06-18 | 다우 코닝 코포레이션 | 습식 에치율이 높은 실록산 수지계 반사 방지 피막 조성물 |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
US8901268B2 (en) * | 2004-08-03 | 2014-12-02 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
EP1819844B1 (en) | 2004-12-17 | 2008-07-09 | Dow Corning Corporation | Method for forming anti-reflective coating |
ATE486098T1 (de) | 2004-12-17 | 2010-11-15 | Dow Corning | Siloxanharzbeschichtung |
KR100618907B1 (ko) * | 2005-07-30 | 2006-09-01 | 삼성전자주식회사 | 다중 반사 방지층을 포함한 반도체 구조물 및 그 구조물을이용한 pr 패턴 형성 방법 및 반도체 소자의 패턴 형성방법 |
JP5167609B2 (ja) * | 2005-08-24 | 2013-03-21 | 東レ・ファインケミカル株式会社 | オキセタニル基を有するシリコーン共重合体 |
US9482786B2 (en) | 2006-02-03 | 2016-11-01 | Gelest Technologies, Inc. | Bird deterrent glass coatings |
US20070190343A1 (en) * | 2006-02-03 | 2007-08-16 | Gelest Technologies Inc. | Bird-deterrent glass coatings |
KR101324052B1 (ko) | 2006-02-13 | 2013-11-01 | 다우 코닝 코포레이션 | 반사방지 코팅 재료 |
JP2007272168A (ja) * | 2006-03-10 | 2007-10-18 | Tokyo Ohka Kogyo Co Ltd | レジスト下層膜用組成物及びこれを用いたレジスト下層膜 |
US7704670B2 (en) * | 2006-06-22 | 2010-04-27 | Az Electronic Materials Usa Corp. | High silicon-content thin film thermosets |
US20070298349A1 (en) * | 2006-06-22 | 2007-12-27 | Ruzhi Zhang | Antireflective Coating Compositions Comprising Siloxane Polymer |
US7416834B2 (en) | 2006-09-27 | 2008-08-26 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
JP5193207B2 (ja) | 2007-02-09 | 2013-05-08 | 株式会社日本触媒 | シラン化合物、その製造方法及びシラン化合物を含む樹脂組成物 |
US8026040B2 (en) * | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
KR20090114476A (ko) * | 2007-02-26 | 2009-11-03 | 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프. | 실록산 중합체의 제조 방법 |
US8642246B2 (en) * | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
KR101523393B1 (ko) | 2007-02-27 | 2015-05-27 | 이엠디 퍼포먼스 머티리얼스 코프. | 규소를 주성분으로 하는 반사 방지 코팅 조성물 |
NL2000607C2 (nl) * | 2007-04-24 | 2008-10-28 | Academisch Medisch Ct Van De U | Manipulator voor een instrument voor minimaal-invasieve chirurgie, alsmede een positioneerhulporgaan voor het plaatsen van een dergelijk instrument. |
US8017296B2 (en) * | 2007-05-22 | 2011-09-13 | Az Electronic Materials Usa Corp. | Antireflective coating composition comprising fused aromatic rings |
US8318258B2 (en) | 2008-01-08 | 2012-11-27 | Dow Corning Toray Co., Ltd. | Silsesquioxane resins |
WO2009091440A1 (en) | 2008-01-15 | 2009-07-23 | Dow Corning Corporation | Silsesquioxane resins |
WO2009111122A2 (en) | 2008-03-04 | 2009-09-11 | Dow Corning Corporation | Silsesquioxane resins |
CN101970540B (zh) | 2008-03-05 | 2014-07-23 | 陶氏康宁公司 | 倍半硅氧烷树脂 |
US7989144B2 (en) * | 2008-04-01 | 2011-08-02 | Az Electronic Materials Usa Corp | Antireflective coating composition |
KR100894218B1 (ko) * | 2008-04-11 | 2009-04-22 | 금호석유화학 주식회사 | 흡광제 및 이를 포함하는 유기 반사 방지막 조성물 |
JP5359014B2 (ja) * | 2008-04-28 | 2013-12-04 | 三菱瓦斯化学株式会社 | 紫外線吸収能を有するポリカーボネート樹脂 |
US7932018B2 (en) * | 2008-05-06 | 2011-04-26 | Az Electronic Materials Usa Corp. | Antireflective coating composition |
KR101541439B1 (ko) * | 2008-07-24 | 2015-08-03 | 닛산 가가쿠 고교 가부시키 가이샤 | 코팅 조성물 및 패턴 형성방법 |
WO2010021030A1 (ja) * | 2008-08-20 | 2010-02-25 | 富士通株式会社 | レジスト増感膜形成用材料、半導体装置の製造方法、半導体装置、及び磁気ヘッド |
JP5360062B2 (ja) * | 2008-08-20 | 2013-12-04 | 富士通株式会社 | 電子線レジスト増感膜形成用材料、並びに半導体装置の製造方法 |
US8153523B2 (en) * | 2008-09-12 | 2012-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of etching a layer of a semiconductor device using an etchant layer |
US7955782B2 (en) | 2008-09-22 | 2011-06-07 | Honeywell International Inc. | Bottom antireflective coatings exhibiting enhanced wet strip rates, bottom antireflective coating compositions for forming bottom antireflective coatings, and methods for fabricating the same |
US20100119979A1 (en) * | 2008-11-13 | 2010-05-13 | Rahman M Dalil | Antireflective Coating Composition Comprising Fused Aromatic Rings |
US20100151392A1 (en) * | 2008-12-11 | 2010-06-17 | Rahman M Dalil | Antireflective coating compositions |
US20100316949A1 (en) * | 2009-06-10 | 2010-12-16 | Rahman M Dalil | Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
US8486609B2 (en) * | 2009-12-23 | 2013-07-16 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8906590B2 (en) * | 2011-03-30 | 2014-12-09 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
US9366964B2 (en) * | 2011-09-21 | 2016-06-14 | Dow Global Technologies Llc | Compositions and antireflective coatings for photolithography |
US8906592B2 (en) | 2012-08-01 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective coating composition and process thereof |
US9256128B2 (en) | 2013-03-12 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing semiconductor device |
US9543147B2 (en) | 2013-03-12 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of manufacture |
US9245751B2 (en) * | 2013-03-12 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-reflective layer and method |
US9502231B2 (en) | 2013-03-12 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist layer and method |
US9152051B2 (en) | 2013-06-13 | 2015-10-06 | Az Electronics Materials (Luxembourg) S.A.R.L. | Antireflective coating composition and process thereof |
US9804493B2 (en) | 2013-11-22 | 2017-10-31 | Samsung Electronics Co., Ltd. | Composition for forming topcoat layer and resist pattern formation method employing the same |
WO2015178741A1 (ko) | 2014-05-22 | 2015-11-26 | 주식회사 엘지화학 | 폴리에틸렌테레프탈레이트 보호 필름을 포함하는 편광판, 그 제조 방법, 이를 포함하는 화상표시장치 및 액정표시장치 |
JP6196194B2 (ja) | 2014-08-19 | 2017-09-13 | 信越化学工業株式会社 | 紫外線吸収剤、レジスト下層膜形成用組成物、及びパターン形成方法 |
EP3194502A4 (en) | 2015-04-13 | 2018-05-16 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
KR101956830B1 (ko) | 2015-08-18 | 2019-03-12 | 주식회사 엘지화학 | 저굴절층 및 이를 포함하는 반사 방지 필름 |
CN105671950B (zh) * | 2016-02-03 | 2018-09-18 | 陕西省石油化工研究设计院 | 一种纺织品用反应性防紫外线整理剂 |
JP7075209B2 (ja) * | 2016-12-28 | 2022-05-25 | 東京応化工業株式会社 | パターン形成方法及びポリシラン樹脂前駆体の製造方法 |
CN107474614B (zh) * | 2017-08-04 | 2020-09-18 | 来奇偏光科技(中国)股份有限公司 | 一种抗反射膜的底漆配方及制备方法 |
CN108345176A (zh) * | 2018-03-02 | 2018-07-31 | 睿力集成电路有限公司 | 光阻剂涂布工艺、润湿溶剂筛选方法及润湿溶剂 |
CN108857600B (zh) * | 2018-07-25 | 2023-07-14 | 浙江工业大学 | 一种基于光催化的钴基合金加工方法及加工平台 |
KR102751329B1 (ko) | 2019-03-28 | 2025-01-07 | 삼성전자주식회사 | 반사방지막 형성용 폴리머 및 조성물과 반사방지막을 이용하는 집적회로 소자의 제조 방법 |
US20220315768A1 (en) * | 2019-10-07 | 2022-10-06 | Nippon Electric Glass Co., Ltd. | Liquid composition for forming anti-glare film and production method for anti-glare-film-coated substrate |
US20210325570A1 (en) * | 2020-04-17 | 2021-10-21 | Vision Ease, Lp | Easy To Clean And Anti-Fog Coating With Anti-Reflective Properties |
Family Cites Families (447)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US35368A (en) | 1862-05-27 | Improvement in shutter-fastenings | ||
US35239A (en) | 1862-05-13 | Improved mode of securing chimneys to lamps | ||
US35447A (en) | 1862-06-03 | Coal oil lamp chimney | ||
US677386A (en) | 1900-08-10 | 1901-07-02 | Chief Husker And Shredder Company | Corn husker and shredder. |
CA586038A (en) | 1956-03-26 | 1959-10-27 | General Electric Company | Organopolysiloxane resins |
US5270285A (en) | 1965-02-28 | 1993-12-14 | Dai Nippon Insatsu Kabushiki Kaisha | Sheet for heat transference |
US3547766A (en) | 1966-11-25 | 1970-12-15 | Du Pont | Laminated article |
CA993709A (en) | 1971-01-21 | 1976-07-27 | Leo Roos | Composite, mask-forming photohardenable elements |
US3784378A (en) | 1971-10-18 | 1974-01-08 | Du Pont | Double-exposure method for producing reverse images in photopolymers |
US3884702A (en) | 1972-12-14 | 1975-05-20 | Unitika Ltd | Photosensitive polyamide composition |
US3929489A (en) | 1973-09-14 | 1975-12-30 | Eastman Kodak Co | Lithographic plates having radiation sensitive elements developable with aqueous alcohol |
US4043812A (en) | 1973-11-19 | 1977-08-23 | Xerox Corporation | Electrostatographic imaging member and process using anthracene functional polymers |
US4107133A (en) | 1974-01-14 | 1978-08-15 | Dainippon Ink & Chemicals, Inc. | Colored polyethylene molding compositions |
US3925077A (en) | 1974-03-01 | 1975-12-09 | Horizons Inc | Photoresist for holography and laser recording with bleachout dyes |
US4191571A (en) | 1974-04-26 | 1980-03-04 | Hitachi, Ltd. | Method of pattern forming in a photosensitive composition having a reciprocity law failing property |
US4018607A (en) | 1974-05-03 | 1977-04-19 | Eastman Kodak Company | Crystalline organic pigment sensitizers for photoconductive layers |
US4018606A (en) | 1974-05-03 | 1977-04-19 | Eastman Kodak Company | Organic azo pigment sensitizers for photoconductive layers |
US4048146A (en) | 1975-10-14 | 1977-09-13 | Eastman Kodak Company | Radiation sensitive polymers of oxygen-substituted maleimides and elements containing same |
US4052367A (en) | 1975-10-14 | 1977-10-04 | Eastman Kodak Company | Radiation sensitive polymers of oxygen-substituted maleimides and elements containing same |
US4102683A (en) | 1977-02-10 | 1978-07-25 | Rca Corp. | Nonreflecting photoresist process |
US5624294A (en) | 1977-03-17 | 1997-04-29 | Applied Elastomerics, Inc. | Humdinger, gel spinner |
US5262468A (en) | 1977-03-17 | 1993-11-16 | Applied Elastomerics, Inc. | Thermoplastic elastomer gelatinous compositions |
US4369284A (en) | 1977-03-17 | 1983-01-18 | Applied Elastomerics, Incorporated | Thermoplastic elastomer gelatinous compositions |
US5655947A (en) | 1977-03-17 | 1997-08-12 | Applied Elastomerics, Inc. | Ultra-soft, ultra-elastic gel airfoils |
US5324222A (en) | 1977-03-17 | 1994-06-28 | Applied Elastomerics, Inc. | Ultra-soft, ultra-elastic airfoils |
US5508334A (en) | 1977-03-17 | 1996-04-16 | Applied Elastomerics, Inc. | Thermoplastic elastomer gelatinous compositions and articles |
US5239723A (en) | 1977-03-17 | 1993-08-31 | Applied Elastomerics, Inc. | Gelatinous elastomer swabs |
US5334646B1 (en) | 1977-03-17 | 1998-09-08 | Applied Elastomerics Inc | Thermoplastic elastomer gelatinous articles |
US5475890A (en) | 1977-03-17 | 1995-12-19 | Applied Elastomerics, Inc. | Gelatinous elastomer swabs |
US5633286B1 (en) | 1977-03-17 | 2000-10-10 | Applied Elastomerics Inc | Gelatinous elastomer articles |
US5336708A (en) | 1977-03-17 | 1994-08-09 | Applied Elastomerics, Inc. | Gelatinous elastomer articles |
US5153254A (en) | 1977-03-17 | 1992-10-06 | Applied Elastomerics, Inc. | Reusable lint remover |
US4618213A (en) | 1977-03-17 | 1986-10-21 | Applied Elastomerics, Incorporated | Gelatinous elastomeric optical lens, light pipe, comprising a specific block copolymer and an oil plasticizer |
DE2720559A1 (de) | 1977-05-07 | 1978-11-09 | Basf Ag | Verbesserte photopolymerisierbare massen fuer die herstellung von druckplatten und reliefformen |
GB1604414A (en) | 1977-07-27 | 1981-12-09 | Raychem Ltd | Silicone resin |
JPS6058467B2 (ja) | 1977-10-22 | 1985-12-20 | 株式会社リコー | 電子写真用感光体 |
US4302503A (en) | 1978-05-17 | 1981-11-24 | Libbey-Owens-Ford Company | Architectural spandrel |
US4299938A (en) | 1979-06-19 | 1981-11-10 | Ciba-Geigy Corporation | Photopolymerizable and thermally polymerizable compositions |
US4349609A (en) | 1979-06-21 | 1982-09-14 | Fujitsu Limited | Electronic device having multilayer wiring structure |
US4935583A (en) | 1980-05-30 | 1990-06-19 | Kyle James C | Insulated conductor with ceramic-connected elements |
US4413052A (en) | 1981-02-04 | 1983-11-01 | Ciba-Geigy Corporation | Photopolymerization process employing compounds containing acryloyl group and anthryl group |
US4362809A (en) | 1981-03-30 | 1982-12-07 | Hewlett-Packard Company | Multilayer photoresist process utilizing an absorbant dye |
US4348471A (en) | 1981-06-15 | 1982-09-07 | Polychrome Corporation | Positive acting composition yielding pre-development high visibility image after radiation exposure comprising acid free novolak, diazo oxide and acid sensitive dyestuff |
US4783347A (en) | 1981-12-01 | 1988-11-08 | General Electric Company | Method for primerless coating of plastics |
US4442197A (en) | 1982-01-11 | 1984-04-10 | General Electric Company | Photocurable compositions |
US5670295A (en) | 1982-07-30 | 1997-09-23 | Namba; Kenryo | Optical recording medium |
DE3231147A1 (de) | 1982-08-21 | 1984-02-23 | Basf Ag, 6700 Ludwigshafen | Positiv arbeitendes verfahren zur herstellung von reliefbildern oder resistmustern |
US6194121B1 (en) | 1982-09-25 | 2001-02-27 | Tdk Corp. | Optical recording medium |
JPH0612452B2 (ja) | 1982-09-30 | 1994-02-16 | ブリュ−ワ−・サイエンス・インコ−ポレイテッド | 集積回路素子の製造方法 |
US4910122A (en) | 1982-09-30 | 1990-03-20 | Brewer Science, Inc. | Anti-reflective coating |
US4822718A (en) | 1982-09-30 | 1989-04-18 | Brewer Science, Inc. | Light absorbing coating |
JPS59109565A (ja) | 1982-12-16 | 1984-06-25 | Fujitsu Ltd | コ−テイング樹脂溶液およびその製造方法 |
US4590117A (en) | 1983-03-10 | 1986-05-20 | Toray Industries, Inc. | Transparent material having antireflective coating |
JPS59226346A (ja) | 1983-06-07 | 1984-12-19 | Fuotopori Ouka Kk | プリント回路の製造方法 |
US4430153A (en) | 1983-06-30 | 1984-02-07 | International Business Machines Corporation | Method of forming an RIE etch barrier by in situ conversion of a silicon containing alkyl polyamide/polyimide |
DE3324795A1 (de) | 1983-07-09 | 1985-01-17 | Merck Patent Gmbh, 6100 Darmstadt | Negativ arbeitende fotoresistzusammensetzungen mit strahlungsabsorbierenden zusaetzen |
GB8333901D0 (en) | 1983-12-20 | 1984-02-01 | Minnesota Mining & Mfg | Radiationsensitive compositions |
EP0153904B1 (de) | 1984-02-10 | 1988-09-14 | Ciba-Geigy Ag | Verfahren zur Herstellung einer Schutzschicht oder einer Reliefabbildung |
DE3561155D1 (ko) | 1984-02-10 | 1988-01-21 | Ciba-Geigy Ag | |
US4752649A (en) | 1984-02-29 | 1988-06-21 | Bowling Green State University | Perester photoinitiators |
US4831188A (en) | 1984-02-29 | 1989-05-16 | Bowling Green State University | Perester photoinitiators |
US4767571A (en) | 1984-06-27 | 1988-08-30 | Fuji Photo Film Co., Ltd. | Infrared absorbent |
US4705739A (en) | 1984-07-16 | 1987-11-10 | Minnesota Mining And Manufacturing Company | Graphic arts imaging constructions using vapor-deposited colorant and metalloid layers with overlying photosensitive resist layer |
US4763966A (en) | 1984-07-16 | 1988-08-16 | Fuji Photo Film Co., Ltd. | Infrared absorbent |
US5674648A (en) | 1984-08-06 | 1997-10-07 | Brewer Science, Inc. | Anti-reflective coating |
US4594309A (en) | 1984-10-31 | 1986-06-10 | Allied Corporation | α,β Diketone containing polymers as positive photoresist compositions |
US4587138A (en) | 1984-11-09 | 1986-05-06 | Intel Corporation | MOS rear end processing |
US4705729A (en) | 1984-11-19 | 1987-11-10 | Hewlett-Packard Company | Method for photochemically enhancing resolution in photolithography processes |
IT1177373B (it) | 1984-12-06 | 1987-08-26 | Bioresearch Spa | Sali della 5'-metiltio-5'-deossiadenosina con acidi solfonici a lunga catena alchilica |
US4708925A (en) | 1984-12-11 | 1987-11-24 | Minnesota Mining And Manufacturing Company | Photosolubilizable compositions containing novolac phenolic resin |
JPS6289907A (ja) | 1985-06-19 | 1987-04-24 | Sumitomo Bakelite Co Ltd | 偏光膜一体型透明導電性フイルム |
US4681795A (en) | 1985-06-24 | 1987-07-21 | The United States Of America As Represented By The Department Of Energy | Planarization of metal films for multilevel interconnects |
US4674176A (en) | 1985-06-24 | 1987-06-23 | The United States Of America As Represented By The United States Department Of Energy | Planarization of metal films for multilevel interconnects by pulsed laser heating |
US4609614A (en) | 1985-06-24 | 1986-09-02 | Rca Corporation | Process of using absorptive layer in optical lithography with overlying photoresist layer to form relief pattern on substrate |
US4814578A (en) | 1985-06-24 | 1989-03-21 | The United States Of America As Represented By The Department Of Energy | Planarization of metal films for multilevel interconnects |
EP0217137B1 (en) | 1985-08-29 | 1992-04-08 | E.I. Du Pont De Nemours And Company | Photopolymerizable composition of acrylic copolymer containing dicyclopentenyl acrylate or methacrylate |
US4786569A (en) | 1985-09-04 | 1988-11-22 | Ciba-Geigy Corporation | Adhesively bonded photostructurable polyimide film |
US4923638A (en) | 1985-09-30 | 1990-05-08 | Fuji Photo Film Co., Ltd. | Near infrared absorbing composition |
ES2060579T3 (es) | 1985-12-09 | 1994-12-01 | Nippon Paint Co Ltd | Material de impresion a base de resina fotosensible. |
US4678835A (en) | 1986-01-30 | 1987-07-07 | Ppg Industries, Inc. | Coating composition containing an ungelled reaction product as a curative |
US4693959A (en) | 1986-03-07 | 1987-09-15 | E.I. Du Pont De Nemours And Company | Adhesion promotion in photoresist lamination and processing |
JPS63139303A (ja) | 1986-08-05 | 1988-06-11 | Fuji Photo Film Co Ltd | 赤外線吸収性組成物 |
US4950583A (en) | 1986-09-17 | 1990-08-21 | Brewer Science Inc. | Adhesion promoting product and process for treating an integrated circuit substrate therewith |
US4732858A (en) | 1986-09-17 | 1988-03-22 | Brewer Science, Inc. | Adhesion promoting product and process for treating an integrated circuit substrate |
US4731264A (en) | 1986-10-03 | 1988-03-15 | Ppg Industries, Inc. | Sol-gel compositions containing silane and alumina |
US4863827A (en) | 1986-10-20 | 1989-09-05 | American Hoechst Corporation | Postive working multi-level photoresist |
US6033283A (en) | 1986-10-21 | 2000-03-07 | Applied Elastomerics, Inc. | Humdinger, string spinning toy |
US5079600A (en) | 1987-03-06 | 1992-01-07 | Schnur Joel M | High resolution patterning on solid substrates |
US5389496A (en) | 1987-03-06 | 1995-02-14 | Rohm And Haas Company | Processes and compositions for electroless metallization |
US5077085A (en) | 1987-03-06 | 1991-12-31 | Schnur Joel M | High resolution metal patterning of ultra-thin films on solid substrates |
US4782009A (en) | 1987-04-03 | 1988-11-01 | General Electric Company | Method of coating and imaging photopatternable silicone polyamic acid |
US4855199A (en) | 1987-04-03 | 1989-08-08 | General Electric Company | Photopatterned product of silicone polyamic acid on a transparent substrate |
DE3719844A1 (de) | 1987-06-13 | 1988-12-29 | Basf Ag | Durch photopolymersisation vernetzbares gemisch |
US4839274A (en) | 1987-06-30 | 1989-06-13 | Eastman Kodak Company | Novel polymethine dyes and UV absorbers containing a triarylborylisocyano group and imaging compositions containing these dyes |
EP0301641A1 (en) | 1987-07-23 | 1989-02-01 | Koninklijke Philips Electronics N.V. | Master disc and method of manufacturing a matrix |
US4973510A (en) | 1987-09-02 | 1990-11-27 | Teijin Limited | Coated sheet material and process for producing same |
US5024923A (en) | 1987-09-09 | 1991-06-18 | Fuji Photo Film Co., Ltd. | Infrared absorbent compositions |
DE3735852A1 (de) | 1987-10-23 | 1989-05-03 | Hoechst Ag | Positiv arbeitendes lichtempfindliches gemisch, enthaltend einen farbstoff, und daraus hergestelltes positiv arbeitendes lichtempfindliches aufzeichnungsmaterial |
WO1989004004A1 (en) | 1987-10-24 | 1989-05-05 | Ito Optical Industrial Co., Ltd. | Processing solution for preventing reflection of optical parts and process for preventing reflection using the solution |
US4925772A (en) | 1987-11-26 | 1990-05-15 | Siemens Aktiengesellschaft | Anti-radiation covering for electronic components |
US5272026A (en) | 1987-12-18 | 1993-12-21 | Ucb S.A. | Negative image process utilizing photosensitive compositions containing aromatic fused polycyclic sulfonic acid and partial ester or phenolic resin with diazoquinone sulfonic acid or diazoquinone carboxylic acid, and associated imaged article |
GB8729510D0 (en) | 1987-12-18 | 1988-02-03 | Ucb Sa | Photosensitive compositions containing phenolic resins & diazoquinone compounds |
US6040251A (en) | 1988-03-14 | 2000-03-21 | Nextec Applications Inc. | Garments of barrier webs |
US5194364A (en) | 1988-03-16 | 1993-03-16 | Fujitsu Limited | Process for formation of resist patterns |
US5391463A (en) | 1988-04-14 | 1995-02-21 | The United States Of America As Represented By The Secretary Of The Navy | Surface modification to create regions resistant to adsorption of biomolecules |
JP2603291B2 (ja) | 1988-04-19 | 1997-04-23 | 東芝シリコーン株式会社 | 第4級アンモニウム基含有シリコーン樹脂微粉末 |
US4942083A (en) | 1988-05-16 | 1990-07-17 | Smith Novis W Jr | Abrasion resistant coatings |
EP0345219B1 (de) | 1988-05-31 | 1994-02-02 | Ciba-Geigy Ag | Wässrige Dispersion von 2-(2'-Hydroxyphenyl-)benzotriazolen |
US5403680A (en) | 1988-08-30 | 1995-04-04 | Osaka Gas Company, Ltd. | Photolithographic and electron beam lithographic fabrication of micron and submicron three-dimensional arrays of electronically conductive polymers |
US5173368A (en) | 1988-09-14 | 1992-12-22 | Pilkington Visioncare Holdings, Inc. | Solution-applied antireflective coatings |
US4954414A (en) | 1988-11-08 | 1990-09-04 | The Mead Corporation | Photosensitive composition containing a transition metal coordination complex cation and a borate anion and photosensitive materials employing the same |
US5199979A (en) | 1988-11-25 | 1993-04-06 | Ppg Industries, Inc. | UV resistant, abrasion resistant coatings |
US5455145A (en) | 1988-12-24 | 1995-10-03 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing double layer resist pattern and double layer resist structure |
US5439766A (en) | 1988-12-30 | 1995-08-08 | International Business Machines Corporation | Composition for photo imaging |
US5747223A (en) | 1988-12-30 | 1998-05-05 | International Business Machines Corporation | Composition for photoimaging |
US4940651A (en) | 1988-12-30 | 1990-07-10 | International Business Machines Corporation | Method for patterning cationic curable photoresist |
US5300402A (en) | 1988-12-30 | 1994-04-05 | International Business Machines Corporation | Composition for photo imaging |
US5026624A (en) | 1989-03-03 | 1991-06-25 | International Business Machines Corporation | Composition for photo imaging |
US6180317B1 (en) | 1988-12-30 | 2001-01-30 | International Business Machines Corporation | Composition for photoimaging |
EP0388503B1 (en) | 1989-02-03 | 1993-09-01 | Mitsubishi Materials Corporation | Method for pulling single crystals |
US5278010A (en) | 1989-03-03 | 1994-01-11 | International Business Machines Corporation | Composition for photo imaging |
US6210862B1 (en) | 1989-03-03 | 2001-04-03 | International Business Machines Corporation | Composition for photoimaging |
EP0388343B1 (en) | 1989-03-14 | 1996-07-17 | International Business Machines Corporation | Chemically amplified photoresist |
US5317044A (en) | 1989-05-16 | 1994-05-31 | J. M. Huber Corporation | Endothermic blowing agents for surface migration of components in foamed products, compositions and applications |
US5106534A (en) | 1989-05-16 | 1992-04-21 | J. M. Huber Corporation | Endothermic blowing agents compositions and applications |
US5009810A (en) | 1989-05-16 | 1991-04-23 | J. M. Huber Corporation | Endothermic blowing agents compositions and applications |
US5302455A (en) | 1989-05-16 | 1994-04-12 | J. M. Huber Corporation | Endothermic blowing agents compositions and applications |
US5137655A (en) | 1989-05-16 | 1992-08-11 | J. M. Huber Corporation | High temperature endothermic blowing agents compositions and applications |
US5009809A (en) | 1989-05-16 | 1991-04-23 | J. M. Huber Corporation | High temperature endothermic blowing agents compositions and applications |
US5250224A (en) | 1989-05-16 | 1993-10-05 | J. M. Huber Corporation | Foamed products containing endothermic blowing agents and processes |
US5252618A (en) | 1989-05-16 | 1993-10-12 | J. M. Huber Corporation | Endothermic blowing agents for strengthening weld lines in molded thermoplastic resins and products |
US5128232A (en) | 1989-05-22 | 1992-07-07 | Shiply Company Inc. | Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units |
US5013608A (en) | 1989-07-07 | 1991-05-07 | Swedlow, Inc. | Highly tintable abrasion resistant coatings |
US5102695A (en) | 1989-07-07 | 1992-04-07 | Swedlow, Inc. | Highly tintable abrasion resistant coatings |
US5112728A (en) | 1989-10-05 | 1992-05-12 | Konica Corporation | Silver halide photographic light-sensitive material |
US5059512A (en) | 1989-10-10 | 1991-10-22 | International Business Machines Corporation | Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions |
US5212046A (en) | 1989-10-17 | 1993-05-18 | Shipley Company Inc. | Near UV photoresist |
US5252340A (en) | 1989-12-14 | 1993-10-12 | Isolyser Company, Inc. | Method of producing an absorbent composition |
US5104692A (en) | 1990-04-20 | 1992-04-14 | Pilkington Visioncare Holdings, Inc. | Two-layer antireflective coating applied in solution |
US5055372A (en) | 1990-04-23 | 1991-10-08 | The Mead Corporation | Photohardenable composition containing borate salts and ketone initiators |
US6148830A (en) | 1994-04-19 | 2000-11-21 | Applied Elastomerics, Inc. | Tear resistant, multiblock copolymer gels and articles |
US6552109B1 (en) | 1994-04-19 | 2003-04-22 | Applied Elastomerics, Inc. | Gelatinous elastomer compositions and articles |
US6050871A (en) | 1994-04-19 | 2000-04-18 | Applied Elastomerics, Inc. | Crystal gel airfoils with improved tear resistance and gel airfoils with profiles capable of exhibiting time delay recovery from deformation |
US5760117A (en) | 1990-05-21 | 1998-06-02 | Applied Elastomerics, Inc. | Gelatinous composition and articles |
US6117176A (en) | 1993-11-15 | 2000-09-12 | Applied Elastomerics, Inc. | Elastic-crystal gel |
US5884639A (en) | 1996-03-08 | 1999-03-23 | Applied Elastomerics, Inc. | Crystal gels with improved properties |
US6333374B1 (en) | 1990-05-21 | 2001-12-25 | Applied Elastomerics, Inc. | Fluffy, strong, solid elastic gels, articles and method of making same |
US5868597A (en) | 1990-05-21 | 1999-02-09 | Applied Elastomerics, Inc. | Ultra-soft, ultra-elastic gel airfoils |
US5938499A (en) | 1993-11-15 | 1999-08-17 | Applied Elastomerics, Inc. | Elastic gel toy |
US5962572A (en) | 1994-04-19 | 1999-10-05 | Applied Elastomerics, Inc. | Oriented gel and oriented gel articles |
DE69101338T2 (de) | 1990-05-25 | 1994-09-01 | Matsushita Electric Ind Co Ltd | Lichtempfindliche Materialien, die organische photoleitfähige Substanzen enthalten in einem polymeren Bindemittel, das aromatische Ringe umfasst, die mit OH-Gruppen und Bromatomen verbunden sind. |
US5126289A (en) | 1990-07-20 | 1992-06-30 | At&T Bell Laboratories | Semiconductor lithography methods using an arc of organic material |
JP2517785B2 (ja) | 1990-08-02 | 1996-07-24 | 信越化学工業株式会社 | 含浸性防水剤組成物 |
US5082758A (en) | 1990-08-31 | 1992-01-21 | Xerox Corporation | Toner and developer compositions with charge enhancing additives |
US5100503A (en) | 1990-09-14 | 1992-03-31 | Ncr Corporation | Silica-based anti-reflective planarizing layer |
US5152834A (en) * | 1990-09-14 | 1992-10-06 | Ncr Corporation | Spin-on glass composition |
US5302198A (en) | 1990-09-14 | 1994-04-12 | Ncr Corporation | Coating solution for forming glassy layers |
US5527872A (en) | 1990-09-14 | 1996-06-18 | At&T Global Information Solutions Company | Electronic device with a spin-on glass dielectric layer |
US5472488A (en) | 1990-09-14 | 1995-12-05 | Hyundai Electronics America | Coating solution for forming glassy layers |
US5140396A (en) | 1990-10-10 | 1992-08-18 | Polaroid Corporation | Filter and solid state imager incorporating this filter |
US5059500A (en) | 1990-10-10 | 1991-10-22 | Polaroid Corporation | Process for forming a color filter |
KR950002949B1 (ko) | 1990-10-16 | 1995-03-28 | 미쓰이세끼유 가가꾸고오교오 가부시끼가이샤 | 고광선 투과성 방진막, 그 제조방법 및 방진체 |
US5055376A (en) | 1990-11-13 | 1991-10-08 | Eastman Kodak Company | Curable compositions containing onium salt photoinitiators which have a chromophore linked to the onium salt moiety through the 3-position and method of use |
ATE127870T1 (de) | 1990-12-13 | 1995-09-15 | Ciba Geigy Ag | Wässrige dispersion schwerlöslicher uv-absorber. |
US5256510A (en) | 1990-12-21 | 1993-10-26 | Eastman Kodak Company | Photoelectrographic imaging with near-infrared sensitizing dyes |
US5219788A (en) | 1991-02-25 | 1993-06-15 | Ibm Corporation | Bilayer metallization cap for photolithography |
JPH05202483A (ja) | 1991-04-25 | 1993-08-10 | Shipley Co Inc | 無電解金属化方法と組成物 |
US5648201A (en) | 1991-04-25 | 1997-07-15 | The United Sates Of America As Represented By The Secretary Of The Navy | Efficient chemistry for selective modification and metallization of substrates |
US5166093A (en) | 1991-07-31 | 1992-11-24 | Micron Technology, Inc. | Method to reduce the reflectivity of a semi-conductor metallic surface |
US5418136A (en) | 1991-10-01 | 1995-05-23 | Biostar, Inc. | Devices for detection of an analyte based upon light interference |
JPH0597478A (ja) | 1991-10-04 | 1993-04-20 | Nippon Sheet Glass Co Ltd | 撥水性ガラス物品およびその製造方法 |
US5212218A (en) | 1991-10-15 | 1993-05-18 | A. B. Chance Company | Hydrophobic, erodiable synthetic resin composition for electrical insulators |
US6472128B2 (en) | 1996-04-30 | 2002-10-29 | Shipley Company, L.L.C. | Antihalation compositions |
US6773864B1 (en) | 1991-11-15 | 2004-08-10 | Shipley Company, L.L.C. | Antihalation compositions |
US6528235B2 (en) | 1991-11-15 | 2003-03-04 | Shipley Company, L.L.C. | Antihalation compositions |
US6165697A (en) | 1991-11-15 | 2000-12-26 | Shipley Company, L.L.C. | Antihalation compositions |
WO1993016138A1 (en) | 1992-02-05 | 1993-08-19 | Toray Industries, Inc. | Primer and double-layer coated article |
JP2694097B2 (ja) | 1992-03-03 | 1997-12-24 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 反射防止コーティング組成物 |
US5457081A (en) | 1992-05-15 | 1995-10-10 | Dai Nippon Printing Co., Ltd. | Thermal transfer image receiving sheet |
JP2753921B2 (ja) | 1992-06-04 | 1998-05-20 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
US5576247A (en) | 1992-07-31 | 1996-11-19 | Matsushita Electric Industrial Co., Ltd. | Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture |
JPH0656560A (ja) | 1992-08-10 | 1994-03-01 | Sony Corp | Sog組成物及びそれを用いた半導体装置の製造方法 |
US5385804A (en) | 1992-08-20 | 1995-01-31 | International Business Machines Corporation | Silicon containing negative resist for DUV, I-line or E-beam lithography comprising an aromatic azide side group in the polysilsesquioxane polymer |
US6420475B1 (en) | 1994-04-19 | 2002-07-16 | Applied Elastomerics, Inc. | Tear resistant elastic crystal gels gel composites and their uses |
US6867253B1 (en) | 1994-04-19 | 2005-03-15 | Applied Elastomerics, Inc. | Tear resistant, crystalline midblock copolymer gels and articles |
US6324703B1 (en) | 1994-04-19 | 2001-12-04 | Applied Elastomerics, Inc. | Strong, soft, tear resistant insulating compositions and composites for extreme cold weather use |
US6794440B2 (en) | 1994-04-19 | 2004-09-21 | Applied Elastomerics, Inc. | Tear resistant gelatinous elastomer compositions and articles for use as fishing bait |
US6627275B1 (en) | 1994-04-19 | 2003-09-30 | Applied Elastomerics, Incorporated | Tear resistant elastic crystal gels suitable for inflatable restraint cushions and other uses |
US6909220B2 (en) | 1994-04-19 | 2005-06-21 | Applied Elastomerics, Inc. | High strain tear resistant gels and gel composites for use as artificial muscle actuators |
GB2277095B (en) | 1992-09-24 | 1997-04-16 | Kansai Paint Co Ltd | Topcoating composition and film-forming process by use of the same |
CA2107715A1 (en) | 1992-10-06 | 1994-04-07 | Hiroyuki Naito | Solvent-free organosiloxane composition and its use |
US5873931A (en) | 1992-10-06 | 1999-02-23 | Minnesota Mining And Manufacturing Company | Coating composition having anti-reflective and anti-fogging properties |
JPH06140396A (ja) | 1992-10-23 | 1994-05-20 | Yamaha Corp | 半導体装置とその製法 |
US5384357A (en) | 1992-11-02 | 1995-01-24 | General Electric Company | Infrared radiation curable organopolysiloxane compositions |
JP2704175B2 (ja) | 1992-11-25 | 1998-01-26 | 株式会社アメックス協販 | 瓦パネル |
US5395734A (en) | 1992-11-30 | 1995-03-07 | Minnesota Mining And Manufacturing Company | Shoot and run printing materials |
US5719249A (en) | 1993-11-29 | 1998-02-17 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Reactive silicon group-containing polyoxyalkylene-polysiloxane copolymer |
DE4241727A1 (de) | 1992-12-10 | 1994-06-16 | Wacker Chemie Gmbh | In Wasser selbstdispergierende, Organopolysiloxan anhaltende Zusammensetzungen |
US5449712A (en) | 1993-01-13 | 1995-09-12 | Thoro System Products, Inc. | Organosilicon emulsions for rendering porous substrates water repellent |
US5512418A (en) | 1993-03-10 | 1996-04-30 | E. I. Du Pont De Nemours And Company | Infra-red sensitive aqueous wash-off photoimaging element |
US5576359A (en) | 1993-07-20 | 1996-11-19 | Wako Pure Chemical Industries, Ltd. | Deep ultraviolet absorbent composition |
US5498748A (en) | 1993-07-20 | 1996-03-12 | Wako Pure Chemical Industries, Ltd. | Anthracene derivatives |
DE4331162A1 (de) | 1993-09-14 | 1995-03-16 | Bayer Ag | Verfahren zur Herstellung von Cyaninfarbstoffen |
US5467626A (en) | 1993-10-01 | 1995-11-21 | The Boeing Company | Integral forming die system for superplastic metal forming |
US5382615A (en) | 1993-10-01 | 1995-01-17 | Eastman Chemical Company | Modified polyethylene based hot-melt adhesives for use in packaging |
US6776094B1 (en) | 1993-10-04 | 2004-08-17 | President & Fellows Of Harvard College | Kit For Microcontact Printing |
US5460911A (en) | 1994-03-14 | 1995-10-24 | Xerox Corporation | Electrophotographic imaging member free of reflection interference |
EP0675410B1 (en) | 1994-03-28 | 1999-08-04 | Wako Pure Chemical Industries Ltd | Resist composition for deep ultraviolet light |
US6161555A (en) | 1994-04-19 | 2000-12-19 | Applied Elastomerics, Inc. | Crystal gels useful as dental floss with improved high tear, high tensile, and resistance to high stress rupture properties |
US5759625A (en) | 1994-06-03 | 1998-06-02 | E. I. Du Pont De Nemours And Company | Fluoropolymer protectant layer for high temperature superconductor film and photo-definition thereof |
US5468591A (en) | 1994-06-14 | 1995-11-21 | Eastman Kodak Company | Barrier layer for laser ablative imaging |
FR2721720B1 (fr) | 1994-06-27 | 1996-09-06 | Essilor Int | Lentille ophtalmique en verre organique à intercouche anti-chocs et son procédé de fabrication. |
US20020034630A1 (en) | 1994-06-27 | 2002-03-21 | Jean-Paul Cano | Ophthalmic lens made of organic glass with a shockproof intermediate layer, and method for making same |
US5910021A (en) | 1994-07-04 | 1999-06-08 | Yamaha Corporation | Manufacture of semiconductor device with fine pattens |
US5976666A (en) | 1994-08-29 | 1999-11-02 | Sri International | Electromagnetic radiation absorbing devices and associated methods of manufacture and use |
US5498468A (en) | 1994-09-23 | 1996-03-12 | Kimberly-Clark Corporation | Fabrics composed of ribbon-like fibrous material and method to make the same |
US5449639A (en) | 1994-10-24 | 1995-09-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Disposable metal anti-reflection coating process used together with metal dry/wet etch |
KR0129950B1 (ko) | 1994-11-30 | 1998-04-03 | 김광호 | 반사방지막 조성물 |
US5679128A (en) | 1995-01-31 | 1997-10-21 | Latting; John Alvis | Dry-bonded nonionic adjuvants |
US5964917A (en) | 1995-01-31 | 1999-10-12 | Latting; John Alvis | Free-flowing fertilizer compositions |
JP3436435B2 (ja) * | 1995-02-22 | 2003-08-11 | 東レ・ダウコーニング・シリコーン株式会社 | 紫外線硬化型シリコーン組成物の硬化方法 |
US5580819A (en) | 1995-03-22 | 1996-12-03 | Ppg Industries, Inc. | Coating composition, process for producing antireflective coatings, and coated articles |
US5945249A (en) | 1995-04-20 | 1999-08-31 | Imation Corp. | Laser absorbable photobleachable compositions |
GB9617416D0 (en) | 1996-08-20 | 1996-10-02 | Minnesota Mining & Mfg | Thermal bleaching of infrared dyes |
US5935758A (en) | 1995-04-20 | 1999-08-10 | Imation Corp. | Laser induced film transfer system |
GB9508031D0 (en) | 1995-04-20 | 1995-06-07 | Minnesota Mining & Mfg | UV-absorbing media bleachable by IR-radiation |
US5747553A (en) | 1995-04-26 | 1998-05-05 | Reinforced Polymer Inc. | Low pressure acrylic molding composition with fiber reinforcement |
US6103779A (en) | 1995-04-26 | 2000-08-15 | Reinforced Polmers, Inc. | Method of preparing molding compositions with fiber reinforcement and products obtained therefrom |
US6150250A (en) | 1995-07-05 | 2000-11-21 | Yamaha Corporation | Conductive layer forming method using etching mask with direction <200> |
JP3512911B2 (ja) | 1995-07-11 | 2004-03-31 | 富士写真フイルム株式会社 | 紫外線吸収剤前駆体化合物、それを含有する感光性樹脂組成物及び画像形成方法 |
US5583195A (en) | 1995-09-29 | 1996-12-10 | General Electric Company | Photocurable epoxy silicones functionalized with fluorescent or photosensitizing marker dyes |
JPH09120157A (ja) | 1995-10-25 | 1997-05-06 | Fuji Photo Film Co Ltd | 湿し水不要感光性平版印刷版 |
US5672243A (en) | 1995-11-28 | 1997-09-30 | Mosel Vitelic, Inc. | Antireflection coating for highly reflective photolithographic layers comprising chromium oxide or chromium suboxide |
TW376408B (en) | 1995-12-01 | 1999-12-11 | Nissan Chemical Ind Ltd | Coating film having water repellency and low refractive index |
US5837568A (en) | 1995-12-12 | 1998-11-17 | Sanyo Electric Co., Ltd. | Manufacturing method of semiconductor devices |
JP3930591B2 (ja) | 1995-12-22 | 2007-06-13 | 東陶機器株式会社 | 光触媒性親水性コーティング組成物、親水性被膜の形成方法および被覆物品 |
US5949518A (en) | 1996-02-13 | 1999-09-07 | Sola International, Inc. | Color-neutral UV blocking coating for plastic lens |
US5756257A (en) | 1996-02-14 | 1998-05-26 | Imation Corp. | Color proofing article incorporating novel antihalation dye |
JP3436843B2 (ja) | 1996-04-25 | 2003-08-18 | 東京応化工業株式会社 | リソグラフィー用下地材及びそれを用いたリソグラフィー用レジスト材料 |
US5994431A (en) | 1996-05-03 | 1999-11-30 | 3M Innovative Properties Company | Amide functional ultraviolet light absorbers for polyolefins |
US6291586B2 (en) | 1996-05-03 | 2001-09-18 | 3M Innovative Properties Company | Amide functional ultraviolet light absorbers for polyurethanes and polyureas |
TW515926B (en) | 1996-07-10 | 2003-01-01 | Matsushita Electric Ind Co Ltd | Liquid crystal alignment film and method for producing the same, and liquid crystal display apparatus using the same and method for producing the same |
JP3222386B2 (ja) | 1996-07-12 | 2001-10-29 | 信越化学工業株式会社 | コーティング剤組成物及びそのコーティング組成物で処理してなる物品 |
US6040053A (en) | 1996-07-19 | 2000-03-21 | Minnesota Mining And Manufacturing Company | Coating composition having anti-reflective and anti-fogging properties |
WO1998018855A1 (en) | 1996-10-25 | 1998-05-07 | Blue River International, L.L.C. | Silicon coating compositions and uses thereof |
JPH10161315A (ja) | 1996-12-05 | 1998-06-19 | Nippon Steel Chem Co Ltd | アルカリ可溶性感光性樹脂組成物 |
US5695551A (en) | 1996-12-09 | 1997-12-09 | Dow Corning Corporation | Water repellent composition |
WO1998026019A1 (fr) | 1996-12-13 | 1998-06-18 | Matsushita Electric Works, Ltd. | Composition d'emulsion de silicium et procede d'elaboration |
US5939236A (en) | 1997-02-07 | 1999-08-17 | Shipley Company, L.L.C. | Antireflective coating compositions comprising photoacid generators |
US6491840B1 (en) | 2000-02-14 | 2002-12-10 | The Procter & Gamble Company | Polymer compositions having specified PH for improved dispensing and improved stability of wrinkle reducing compositions and methods of use |
DE19710461A1 (de) | 1997-03-13 | 1998-09-17 | Wacker Chemie Gmbh | Farbstoffreste aufweisende Organopolysiloxane |
ES2182274T3 (es) | 1997-05-13 | 2003-03-01 | Kirin Brewery | Material de recubrimiento para formar una pelicula vitrea, procedimiento de recubrimiento con el mismo y aplicador del recubrimiento. |
TW473653B (en) | 1997-05-27 | 2002-01-21 | Clariant Japan Kk | Composition for anti-reflective film or photo absorption film and compound used therein |
US5883011A (en) | 1997-06-18 | 1999-03-16 | Vlsi Technology, Inc. | Method of removing an inorganic antireflective coating from a semiconductor substrate |
JP4012600B2 (ja) | 1997-06-23 | 2007-11-21 | 富士通株式会社 | 酸感応性重合体、レジスト組成物、レジストパターン形成方法、および半導体装置の製造方法 |
JP4053631B2 (ja) | 1997-10-08 | 2008-02-27 | Azエレクトロニックマテリアルズ株式会社 | 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体 |
US6190839B1 (en) | 1998-01-15 | 2001-02-20 | Shipley Company, L.L.C. | High conformality antireflective coating compositions |
ES2170493T5 (es) | 1998-01-22 | 2007-11-01 | KETTENBACH GMBH & CO. KG | Relleno para protesis y procedimiento para su produccion. |
US6190955B1 (en) | 1998-01-27 | 2001-02-20 | International Business Machines Corporation | Fabrication of trench capacitors using disposable hard mask |
JP4387588B2 (ja) | 1998-02-04 | 2009-12-16 | メルク エンド カムパニー インコーポレーテッド | 高スループットスクリーニングアッセイ用仮想ウェル |
US5972616A (en) | 1998-02-20 | 1999-10-26 | The Board Of Trustees Of The University Of Arkansas | TADG-15: an extracellular serine protease overexpressed in breast and ovarian carcinomas |
US7022821B1 (en) | 1998-02-20 | 2006-04-04 | O'brien Timothy J | Antibody kit for the detection of TADG-15 protein |
US6503586B1 (en) | 1998-02-25 | 2003-01-07 | Arteva North America S.A.R.L. | Title improved infrared absorbing polyester packaging polymer |
US5985444A (en) | 1998-04-03 | 1999-11-16 | 3M Innovative Properties Company | Amide functional ultraviolet light absorbers for fluoropolymers |
US5986344A (en) | 1998-04-14 | 1999-11-16 | Advanced Micro Devices, Inc. | Anti-reflective coating layer for semiconductor device |
DE19817069A1 (de) | 1998-04-17 | 1999-10-21 | Clariant Gmbh | Infrarotstrahlung reflektierende Farbmittel |
CN1300383A (zh) | 1998-04-29 | 2001-06-20 | 部鲁尔科学公司 | 得自纤维素粘合剂的快速蚀刻、热固性抗反射涂料 |
US6576408B2 (en) | 1998-04-29 | 2003-06-10 | Brewer Science, Inc. | Thermosetting anti-reflective coatings comprising aryl urethanes of hydroxypropyl cellulose |
US6461970B1 (en) | 1998-06-10 | 2002-10-08 | Micron Technology, Inc. | Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby |
KR20010023776A (ko) | 1998-07-10 | 2001-03-26 | 잔디해머,한스루돌프하우스 | 저면 반사 방지막용 조성물 및 이에 사용하기 위한 신규중합체 염료 |
US6444584B1 (en) | 1998-07-16 | 2002-09-03 | Taiwan Semiconductor Manufacturing Company | Plasma etch method for forming composite silicon/dielectric/silicon stack layer |
US6103456A (en) | 1998-07-22 | 2000-08-15 | Siemens Aktiengesellschaft | Prevention of photoresist poisoning from dielectric antireflective coating in semiconductor fabrication |
DE19834745A1 (de) | 1998-08-01 | 2000-02-03 | Agfa Gevaert Ag | Strahlungsempfindliches Gemisch mit IR-absorbierenden, anionischen Cyaninfarbstoffen und damit hergestelltes Aufzeichnungsmaterial |
US6152906A (en) | 1998-08-25 | 2000-11-28 | Kimberly-Clark Worldwide, Inc. | Absorbent article having improved breathability |
US6238379B1 (en) | 1998-08-25 | 2001-05-29 | Kimberly-Clark Worldwide, Inc. | Absorbent article with increased wet breathability |
US6497893B1 (en) | 1999-06-30 | 2002-12-24 | Kimberly-Clark Worldwide, Inc. | Silk protein treatment composition and treated substrate for transfer to skin |
US6217890B1 (en) | 1998-08-25 | 2001-04-17 | Susan Carol Paul | Absorbent article which maintains or improves skin health |
US6149934A (en) | 1999-04-23 | 2000-11-21 | Kimberly-Clark Worldwide, Inc. | Absorbent article having a lotionized bodyside liner |
US6448464B1 (en) | 1999-07-30 | 2002-09-10 | Kimberly-Clark Worldwide, Inc. | Absorbent article which maintains skin temperature when wet |
US6287286B1 (en) | 1998-08-25 | 2001-09-11 | Kimberly-Clark Worldwide, Inc. | Absorbent article having a reduced viability of candida albicans |
US6410209B1 (en) | 1998-09-15 | 2002-06-25 | Shipley Company, L.L.C. | Methods utilizing antireflective coating compositions with exposure under 200 nm |
JP3852889B2 (ja) | 1998-09-24 | 2006-12-06 | 富士写真フイルム株式会社 | フォトレジスト用反射防止膜材料組成物 |
US6190830B1 (en) | 1998-09-29 | 2001-02-20 | Kodak Polychrome Graphics Llc | Processless direct write printing plate having heat sensitive crosslinked vinyl polymer with organoonium group and methods of imaging and printing |
US6667424B1 (en) | 1998-10-02 | 2003-12-23 | Kimberly-Clark Worldwide, Inc. | Absorbent articles with nits and free-flowing particles |
US6673982B1 (en) | 1998-10-02 | 2004-01-06 | Kimberly-Clark Worldwide, Inc. | Absorbent article with center fill performance |
US6562192B1 (en) | 1998-10-02 | 2003-05-13 | Kimberly-Clark Worldwide, Inc. | Absorbent articles with absorbent free-flowing particles and methods for producing the same |
US6503233B1 (en) | 1998-10-02 | 2003-01-07 | Kimberly-Clark Worldwide, Inc. | Absorbent article having good body fit under dynamic conditions |
JP3702108B2 (ja) | 1998-10-07 | 2005-10-05 | 株式会社東芝 | レジストパターン形成方法 |
JP2000129073A (ja) | 1998-10-26 | 2000-05-09 | Toyo Ink Mfg Co Ltd | 常温硬化性樹脂組成物および該樹脂組成物を塗工した基材 |
DE19852852A1 (de) | 1998-11-11 | 2000-05-18 | Inst Halbleiterphysik Gmbh | Lithographieverfahren zur Emitterstrukturierung von Bipolartransistoren |
US6251973B1 (en) | 1998-11-23 | 2001-06-26 | Akzo Nobel N.V. | Coatings and coating compositions of a reactive group-containing polymer, a hydrazide and a silane |
US5981675A (en) | 1998-12-07 | 1999-11-09 | Bausch & Lomb Incorporated | Silicone-containing macromonomers and low water materials |
US6326231B1 (en) | 1998-12-08 | 2001-12-04 | Advanced Micro Devices, Inc. | Use of silicon oxynitride ARC for metal layers |
US6235456B1 (en) | 1998-12-09 | 2001-05-22 | Advanced Micros Devices, Inc. | Graded anti-reflective barrier films for ultra-fine lithography |
US6635281B2 (en) | 1998-12-23 | 2003-10-21 | Alza Corporation | Gastric retaining oral liquid dosage form |
US6342249B1 (en) | 1998-12-23 | 2002-01-29 | Alza Corporation | Controlled release liquid active agent formulation dosage forms |
KR100363695B1 (ko) | 1998-12-31 | 2003-04-11 | 주식회사 하이닉스반도체 | 유기난반사방지중합체및그의제조방법 |
US6210856B1 (en) * | 1999-01-27 | 2001-04-03 | International Business Machines Corporation | Resist composition and process of forming a patterned resist layer on a substrate |
TW476865B (en) | 1999-01-28 | 2002-02-21 | Tokyo Ohka Kogyo Co Ltd | Undercoating composition for photolithographic resist |
US6544717B2 (en) | 1999-01-28 | 2003-04-08 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating composition for photolithographic resist |
US6137634A (en) | 1999-02-01 | 2000-10-24 | Intel Corporation | Microlens array |
US6187505B1 (en) | 1999-02-02 | 2001-02-13 | International Business Machines Corporation | Radiation sensitive silicon-containing resists |
ATE300558T1 (de) | 1999-02-26 | 2005-08-15 | Showa Denko Kk | Photopolymerisationsinitiator für farbfilter, farbzusammensetzung und farbfilter |
US6316165B1 (en) | 1999-03-08 | 2001-11-13 | Shipley Company, L.L.C. | Planarizing antireflective coating compositions |
US6849923B2 (en) | 1999-03-12 | 2005-02-01 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method of the same |
JP4270632B2 (ja) | 1999-03-12 | 2009-06-03 | 株式会社東芝 | ドライエッチングを用いた半導体装置の製造方法 |
US6426125B1 (en) | 1999-03-17 | 2002-07-30 | General Electric Company | Multilayer article and method of making by ARC plasma deposition |
US6409883B1 (en) | 1999-04-16 | 2002-06-25 | Kimberly-Clark Worldwide, Inc. | Methods of making fiber bundles and fibrous structures |
US6268457B1 (en) | 1999-06-10 | 2001-07-31 | Allied Signal, Inc. | Spin-on glass anti-reflective coatings for photolithography |
US6824879B2 (en) * | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
CA2374944A1 (en) * | 1999-06-10 | 2000-12-21 | Nigel Hacker | Spin-on-glass anti-reflective coatings for photolithography |
US6890448B2 (en) | 1999-06-11 | 2005-05-10 | Shipley Company, L.L.C. | Antireflective hard mask compositions |
US6329118B1 (en) | 1999-06-21 | 2001-12-11 | Intel Corporation | Method for patterning dual damascene interconnects using a sacrificial light absorbing material |
US6623791B2 (en) | 1999-07-30 | 2003-09-23 | Ppg Industries Ohio, Inc. | Coating compositions having improved adhesion, coated substrates and methods related thereto |
ATE305019T1 (de) | 1999-07-30 | 2005-10-15 | Ppg Ind Ohio Inc | Beschichtungszusammensetzungen mit verbesserter kratzfestigkeit und beschichtete oberflächen |
US6475892B1 (en) | 1999-08-02 | 2002-11-05 | Aadvanced Micro Devices, Inc. | Simplified method of patterning polysilicon gate in a semiconductor device |
US6107167A (en) | 1999-08-02 | 2000-08-22 | Advanced Micro Devices, Inc. | Simplified method of patterning polysilicon gate in a semiconductor device |
US6335235B1 (en) | 1999-08-17 | 2002-01-01 | Advanced Micro Devices, Inc. | Simplified method of patterning field dielectric regions in a semiconductor device |
AR027842A1 (es) | 1999-08-23 | 2003-04-16 | Kimberly Clark Co | Un articulo absorbente el cual mantiene o mejora la salud de la piel |
AR025300A1 (es) | 1999-08-23 | 2002-11-20 | Kimberly Clark Co | Un articulo absorbente descartable con capacidad para respirar en humedo incrementada. |
JP2001079491A (ja) | 1999-09-10 | 2001-03-27 | Koito Mfg Co Ltd | 塗膜形成方法及び該方法で形成された車両用灯具 |
CN100383910C (zh) | 1999-09-13 | 2008-04-23 | 皇家菲利浦电子有限公司 | 电灯 |
JP4248098B2 (ja) * | 1999-09-20 | 2009-04-02 | 東京応化工業株式会社 | 反射防止膜形成用組成物及びレジストパターンの形成方法 |
US6315946B1 (en) | 1999-10-21 | 2001-11-13 | The United States Of America As Represented By The Secretary Of The Navy | Ultra low carbon bainitic weathering steel |
US6232424B1 (en) | 1999-12-13 | 2001-05-15 | Dow Corning Corporation | Soluble silicone resin compositions having good solution stability |
US6403464B1 (en) | 1999-11-03 | 2002-06-11 | Taiwan Semiconductor Manufacturing Company | Method to reduce the moisture content in an organic low dielectric constant material |
US6391524B2 (en) | 1999-11-19 | 2002-05-21 | Kodak Polychrome Graphics Llc | Article having imagable coatings |
TW468053B (en) | 1999-12-14 | 2001-12-11 | Nissan Chemical Ind Ltd | Antireflection film, process for forming the antireflection film, and antireflection glass |
US6306736B1 (en) | 2000-02-04 | 2001-10-23 | The Regents Of The University Of California | Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process |
IL146385A (en) | 2000-02-08 | 2007-03-08 | Adsil Lc | Method for improving heat efficiency using silane coatings and coated articles produced thereby |
DE60123389T2 (de) | 2000-02-14 | 2007-08-02 | The Procter & Gamble Company, Cincinnati | Stabile, wässerige zusammensetzungen zur behandlung von oberflächen , insbesondere geweben |
EP1269258B1 (en) | 2000-02-22 | 2012-01-11 | Brewer Science, Inc. | Organic polymeric antireflective coatings deposited by chemical vapor deposition |
MXPA02008385A (es) | 2000-02-28 | 2004-07-30 | Adsil Lc | Composiciones de recubrimiento basadas en silano, productos recubiertos obtenidos de las mismas y metodos para usarlas. |
US6451420B1 (en) | 2000-03-17 | 2002-09-17 | Nanofilm, Ltd. | Organic-inorganic hybrid polymer and method of making same |
JP3795333B2 (ja) * | 2000-03-30 | 2006-07-12 | 東京応化工業株式会社 | 反射防止膜形成用組成物 |
EP1278799A1 (en) | 2000-03-30 | 2003-01-29 | General Electric Company | Transparent, flame retardant poly(arylene ether) blends |
US6593388B2 (en) | 2000-04-04 | 2003-07-15 | Renssealer Polytechnic Institute | Oligomeric and polymeric photosensitizers comprising a polynuclear aromatic group |
US6268294B1 (en) | 2000-04-04 | 2001-07-31 | Taiwan Semiconductor Manufacturing Company | Method of protecting a low-K dielectric material |
DE60118052T2 (de) | 2000-04-13 | 2006-10-26 | Jsr Corp. | Überzugsmittel, Verfahren zur Herstellung, gehärtetes Produkt und Beschichtungsfilm |
US6374738B1 (en) | 2000-05-03 | 2002-04-23 | Presstek, Inc. | Lithographic imaging with non-ablative wet printing members |
US6632535B1 (en) | 2000-06-08 | 2003-10-14 | Q2100, Inc. | Method of forming antireflective coatings |
JP3846545B2 (ja) | 2000-06-08 | 2006-11-15 | 信越化学工業株式会社 | コーティング剤組成物、コーティング方法及び被覆物品 |
US6852766B1 (en) | 2000-06-15 | 2005-02-08 | 3M Innovative Properties Company | Multiphoton photosensitization system |
US6420088B1 (en) | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
US6891237B1 (en) | 2000-06-27 | 2005-05-10 | Lucent Technologies Inc. | Organic semiconductor device having an active dielectric layer comprising silsesquioxanes |
US6323268B1 (en) | 2000-06-27 | 2001-11-27 | Dow Corning Corporation | Organosilicon water repellent compositions |
JP2002023350A (ja) | 2000-07-07 | 2002-01-23 | Fuji Photo Film Co Ltd | ネガ型平版印刷版原版 |
US6271273B1 (en) | 2000-07-14 | 2001-08-07 | Shipley Company, L.L.C. | Porous materials |
US6368400B1 (en) * | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
TW556047B (en) | 2000-07-31 | 2003-10-01 | Shipley Co Llc | Coated substrate, method for forming photoresist relief image, and antireflective composition |
US6635341B1 (en) | 2000-07-31 | 2003-10-21 | Ppg Industries Ohio, Inc. | Coating compositions comprising silyl blocked components, coating, coated substrates and methods related thereto |
AU2001293708A1 (en) * | 2000-08-03 | 2002-02-18 | Ciba Specialty Chemicals Holding Inc. | Photostable, silylated benzotriazole uv absorbers and compositions stabilized therewith |
CA2417740A1 (en) | 2000-08-18 | 2002-02-28 | The Procter & Gamble Company | Compositions and methods for odor and fungal control of protective garments |
US6645685B2 (en) | 2000-09-06 | 2003-11-11 | Mitsubishi Paper Mills Limited | Process for producing printed wiring board |
JP3993373B2 (ja) | 2000-09-14 | 2007-10-17 | 信越化学工業株式会社 | ポリオルガノシロキサン化合物及びそれを含有するコーティング組成物 |
JP3772077B2 (ja) * | 2000-09-27 | 2006-05-10 | 株式会社東芝 | パターン形成方法 |
US6465358B1 (en) | 2000-10-06 | 2002-10-15 | Intel Corporation | Post etch clean sequence for making a semiconductor device |
US6884568B2 (en) | 2000-10-17 | 2005-04-26 | Kodak Polychrome Graphics, Llc | Stabilized infrared-sensitive polymerizable systems |
US6864040B2 (en) | 2001-04-11 | 2005-03-08 | Kodak Polychrome Graphics Llc | Thermal initiator system using leuco dyes and polyhalogene compounds |
US6756520B1 (en) | 2000-10-20 | 2004-06-29 | Kimberly-Clark Worldwide, Inc. | Hydrophilic compositions for use on absorbent articles to enhance skin barrier |
US6503526B1 (en) | 2000-10-20 | 2003-01-07 | Kimberly-Clark Worldwide, Inc. | Absorbent articles enhancing skin barrier function |
US6455416B1 (en) | 2000-10-24 | 2002-09-24 | Advanced Micro Devices, Inc. | Developer soluble dyed BARC for dual damascene process |
US6699647B2 (en) | 2000-12-21 | 2004-03-02 | Eastman Kodak Company | High speed photothermographic materials containing tellurium compounds and methods of using same |
US6749860B2 (en) | 2000-12-22 | 2004-06-15 | Kimberly-Clark Worldwide, Inc. | Absorbent articles with non-aqueous compositions containing botanicals |
US20020128615A1 (en) | 2000-12-22 | 2002-09-12 | Tyrrell David John | Absorbent articles with non-aqueous compositions containing anionic polymers |
US6832064B2 (en) | 2000-12-29 | 2004-12-14 | Samsung Electronics Co., Ltd. | Seamless drying belt for electrophotographic process |
WO2002058699A1 (en) | 2001-01-25 | 2002-08-01 | Bristol-Myers Squibb Company | Pharmaceutical forms of epothilones for oral administration |
US6465889B1 (en) | 2001-02-07 | 2002-10-15 | Advanced Micro Devices, Inc. | Silicon carbide barc in dual damascene processing |
US6676398B2 (en) | 2001-02-20 | 2004-01-13 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a prescription reader |
US6840752B2 (en) | 2001-02-20 | 2005-01-11 | Q2100, Inc. | Apparatus for preparing multiple eyeglass lenses |
US6875005B2 (en) | 2001-02-20 | 2005-04-05 | Q1200, Inc. | Apparatus for preparing an eyeglass lens having a gating device |
US6893245B2 (en) | 2001-02-20 | 2005-05-17 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a computer system controller |
US6790024B2 (en) | 2001-02-20 | 2004-09-14 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having multiple conveyor systems |
US7052262B2 (en) | 2001-02-20 | 2006-05-30 | Q2100, Inc. | System for preparing eyeglasses lens with filling station |
US7011773B2 (en) | 2001-02-20 | 2006-03-14 | Q2100, Inc. | Graphical interface to display mold assembly position in a lens forming apparatus |
US6709257B2 (en) | 2001-02-20 | 2004-03-23 | Q2100, Inc. | Eyeglass lens forming apparatus with sensor |
US6808381B2 (en) | 2001-02-20 | 2004-10-26 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a controller |
US7139636B2 (en) | 2001-02-20 | 2006-11-21 | Q2100, Inc. | System for preparing eyeglass lenses with bar code reader |
US6726463B2 (en) | 2001-02-20 | 2004-04-27 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a dual computer system controller |
US6612828B2 (en) | 2001-02-20 | 2003-09-02 | Q2100, Inc. | Fill system with controller for monitoring use |
US6655946B2 (en) | 2001-02-20 | 2003-12-02 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a controller for conveyor and curing units |
US6712331B2 (en) | 2001-02-20 | 2004-03-30 | Q2100, Inc. | Holder for mold assemblies with indicia |
US6702564B2 (en) | 2001-02-20 | 2004-03-09 | Q2100, Inc. | System for preparing an eyeglass lens using colored mold holders |
US6752613B2 (en) | 2001-02-20 | 2004-06-22 | Q2100, Inc. | Apparatus for preparing an eyeglass lens having a controller for initiation of lens curing |
US6758663B2 (en) | 2001-02-20 | 2004-07-06 | Q2100, Inc. | System for preparing eyeglass lenses with a high volume curing unit |
US6717181B2 (en) | 2001-02-22 | 2004-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent device having thin film transistor |
US6703462B2 (en) | 2001-08-09 | 2004-03-09 | Dielectric Systems Inc. | Stabilized polymer film and its manufacture |
US6825303B2 (en) | 2001-02-26 | 2004-11-30 | Dielectric Systems, Inc. | Integration of low ε thin films and Ta into Cu dual damascene |
US20030198578A1 (en) | 2002-04-18 | 2003-10-23 | Dielectric Systems, Inc. | Multi-stage-heating thermal reactor for transport polymerization |
US6797343B2 (en) | 2001-12-20 | 2004-09-28 | Dielectric Systems, Inc. | Dielectric thin films from fluorinated precursors |
US6582861B2 (en) | 2001-03-16 | 2003-06-24 | Applied Materials, Inc. | Method of reshaping a patterned organic photoresist surface |
US6617257B2 (en) | 2001-03-30 | 2003-09-09 | Lam Research Corporation | Method of plasma etching organic antireflective coating |
US6893797B2 (en) | 2001-11-09 | 2005-05-17 | Kodak Polychrome Graphics Llc | High speed negative-working thermal printing plates |
US20040091811A1 (en) | 2002-10-30 | 2004-05-13 | Munnelly Heidi M. | Hetero-substituted aryl acetic acid co-initiators for IR-sensitive compositions |
US6846614B2 (en) | 2002-02-04 | 2005-01-25 | Kodak Polychrome Graphics Llc | On-press developable IR sensitive printing plates |
TW576859B (en) | 2001-05-11 | 2004-02-21 | Shipley Co Llc | Antireflective coating compositions |
JP4146105B2 (ja) | 2001-05-30 | 2008-09-03 | 富士フイルム株式会社 | 紫外線吸収剤及びその製造方法、紫外線吸収剤を含有する組成物、ならびに画像形成方法 |
US6448185B1 (en) | 2001-06-01 | 2002-09-10 | Intel Corporation | Method for making a semiconductor device that has a dual damascene interconnect |
WO2002099470A2 (en) | 2001-06-05 | 2002-12-12 | Flexplay Technologies, Inc. | Limited play optical devices with interstitial reactive layer and methods of making same |
US6558880B1 (en) | 2001-06-06 | 2003-05-06 | Eastman Kodak Company | Thermally developable imaging materials containing heat-bleachable antihalation composition |
JP2003005049A (ja) | 2001-06-21 | 2003-01-08 | Minolta Co Ltd | 光ピックアップ用対物レンズ |
JP4181312B2 (ja) | 2001-06-25 | 2008-11-12 | 富士フイルム株式会社 | ネガ型画像記録材料 |
JP2003025510A (ja) | 2001-07-16 | 2003-01-29 | Shin Etsu Chem Co Ltd | 反射防止性及び耐擦傷性を有する多層積層体 |
US6703169B2 (en) | 2001-07-23 | 2004-03-09 | Applied Materials, Inc. | Method of preparing optically imaged high performance photomasks |
US6649212B2 (en) | 2001-07-30 | 2003-11-18 | Guardian Industries Corporation | Modified silicon-based UV absorbers useful in crosslinkable polysiloxane coatings via sol-gel polymerization |
US6592999B1 (en) | 2001-07-31 | 2003-07-15 | Ppg Industries Ohio, Inc. | Multi-layer composites formed from compositions having improved adhesion, coating compositions, and methods related thereto |
KR100436220B1 (ko) | 2001-08-30 | 2004-06-12 | 주식회사 네패스 | 바닥 반사방지막용 유기 중합체, 그의 제조방법 및 그를함유하는 조성물 |
US6514677B1 (en) | 2001-08-31 | 2003-02-04 | Eastman Kodak Company | Thermally developable infrared sensitive imaging materials containing heat-bleachable antihalation composition |
US6824952B1 (en) | 2001-09-13 | 2004-11-30 | Microchem Corp. | Deep-UV anti-reflective resist compositions |
TW591341B (en) | 2001-09-26 | 2004-06-11 | Shipley Co Llc | Coating compositions for use with an overcoated photoresist |
DE10151264A1 (de) | 2001-10-17 | 2003-04-30 | Degussa | Aminoalkylalkoxysiloxanhaltige Gemische, deren Herstellung und deren Verwendung |
US6730461B2 (en) | 2001-10-26 | 2004-05-04 | Eastman Kodak Company | Thermally developable imaging materials with reduced mottle providing improved image uniformity |
US6949297B2 (en) | 2001-11-02 | 2005-09-27 | 3M Innovative Properties Company | Hybrid adhesives, articles, and methods |
JP4381636B2 (ja) | 2001-11-05 | 2009-12-09 | 新日鐵化学株式会社 | シリコーン樹脂組成物及びシリコーン樹脂成形体 |
KR20040066124A (ko) | 2001-11-15 | 2004-07-23 | 허니웰 인터내셔널 인코포레이티드 | 포토리소그라피용 스핀온 반사 방지 피막 |
US6573175B1 (en) | 2001-11-30 | 2003-06-03 | Micron Technology, Inc. | Dry low k film application for interlevel dielectric and method of cleaning etched features |
US20030171729A1 (en) | 2001-12-28 | 2003-09-11 | Kaun James Martin | Multifunctional containment sheet and system for absorbent atricles |
US6844131B2 (en) | 2002-01-09 | 2005-01-18 | Clariant Finance (Bvi) Limited | Positive-working photoimageable bottom antireflective coating |
KR100508296B1 (ko) | 2002-02-01 | 2005-08-17 | 세이코 엡슨 가부시키가이샤 | 회로 기판, 전기 광학 장치 및 전자 기기 |
CA2474913A1 (en) | 2002-02-05 | 2003-08-14 | Gencell Corporation | Silane coated metallic fuel cell components and methods of manufacture |
DE10213294B4 (de) | 2002-03-25 | 2015-05-13 | Osram Gmbh | Verwendung eines UV-beständigen Polymers in der Optoelektronik sowie im Außenanwendungsbereich, UV-beständiges Polymer sowie optisches Bauelement |
US6730454B2 (en) | 2002-04-16 | 2004-05-04 | International Business Machines Corporation | Antireflective SiO-containing compositions for hardmask layer |
US6787281B2 (en) | 2002-05-24 | 2004-09-07 | Kodak Polychrome Graphics Llc | Selected acid generating agents and their use in processes for imaging radiation-sensitive elements |
US7897979B2 (en) | 2002-06-07 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
CN1248556C (zh) | 2002-08-05 | 2006-03-29 | 佳能株式会社 | 电极和布线材料吸收用底层图形形成材料及其应用 |
US6896821B2 (en) | 2002-08-23 | 2005-05-24 | Dalsa Semiconductor Inc. | Fabrication of MEMS devices with spin-on glass |
JP4032234B2 (ja) * | 2002-09-30 | 2008-01-16 | 信越化学工業株式会社 | ケイ素含有重合性化合物、その製造方法、高分子化合物、レジスト材料及びパターン形成方法 |
US20040067437A1 (en) | 2002-10-06 | 2004-04-08 | Shipley Company, L.L.C. | Coating compositions for use with an overcoated photoresist |
US7005390B2 (en) | 2002-10-09 | 2006-02-28 | Intel Corporation | Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials |
US7038328B2 (en) | 2002-10-15 | 2006-05-02 | Brewer Science Inc. | Anti-reflective compositions comprising triazine compounds |
US6783468B2 (en) | 2002-10-24 | 2004-08-31 | Acushnet Company | Low deformation golf ball |
US7122384B2 (en) | 2002-11-06 | 2006-10-17 | E. I. Du Pont De Nemours And Company | Resonant light scattering microparticle methods |
US7465414B2 (en) | 2002-11-14 | 2008-12-16 | Transitions Optical, Inc. | Photochromic article |
KR20040044368A (ko) | 2002-11-20 | 2004-05-28 | 쉬플리 캄파니, 엘.엘.씨. | 다층 포토레지스트 시스템 |
US7018779B2 (en) | 2003-01-07 | 2006-03-28 | International Business Machines Corporation | Apparatus and method to improve resist line roughness in semiconductor wafer processing |
US7507783B2 (en) | 2003-02-24 | 2009-03-24 | Brewer Science Inc. | Thermally curable middle layer comprising polyhedral oligomeric silsesouioxanes for 193-nm trilayer resist process |
US6902861B2 (en) | 2003-03-10 | 2005-06-07 | Kodak Polychrome Graphics, Llc | Infrared absorbing compounds and their use in photoimageable elements |
US7202013B2 (en) | 2003-06-03 | 2007-04-10 | Shin-Etsu Chemical Co., Ltd. | Antireflective film material, and antireflective film and pattern formation method using the same |
US7303785B2 (en) | 2003-06-03 | 2007-12-04 | Shin-Etsu Chemical Co., Ltd. | Antireflective film material, and antireflective film and pattern formation method using the same |
US7008476B2 (en) | 2003-06-11 | 2006-03-07 | Az Electronic Materials Usa Corp. | Modified alginic acid of alginic acid derivatives and thermosetting anti-reflective compositions thereof |
US6899988B2 (en) | 2003-06-13 | 2005-05-31 | Kodak Polychrome Graphics Llc | Laser thermal metallic donors |
JP2005049542A (ja) | 2003-07-31 | 2005-02-24 | Fuji Photo Film Co Ltd | 画像形成方法及び現像液 |
US7172849B2 (en) | 2003-08-22 | 2007-02-06 | International Business Machines Corporation | Antireflective hardmask and uses thereof |
US20050074981A1 (en) | 2003-10-06 | 2005-04-07 | Meagley Robert P. | Increasing the etch resistance of photoresists |
US7270931B2 (en) | 2003-10-06 | 2007-09-18 | International Business Machines Corporation | Silicon-containing compositions for spin-on ARC/hardmask materials |
TWI367686B (en) | 2004-04-07 | 2012-07-01 | Semiconductor Energy Lab | Light emitting device, electronic device, and television device |
US20060155594A1 (en) | 2005-01-13 | 2006-07-13 | Jess Almeida | Adaptive step-by-step process with guided conversation logs for improving the quality of transaction data |
-
2001
- 2001-11-15 KR KR10-2004-7007486A patent/KR20040066124A/ko not_active Withdrawn
- 2001-11-15 EP EP01996057A patent/EP1472574A4/en not_active Withdrawn
- 2001-11-15 WO PCT/US2001/045306 patent/WO2003044600A1/en active Application Filing
- 2001-11-15 KR KR10-2004-7007489A patent/KR20040075866A/ko not_active Ceased
- 2001-11-15 US US10/495,688 patent/US8344088B2/en not_active Expired - Fee Related
- 2001-11-15 CN CN018239323A patent/CN1606713B/zh not_active Expired - Fee Related
- 2001-11-15 AU AU2002227106A patent/AU2002227106A1/en not_active Abandoned
- 2001-11-15 JP JP2003546172A patent/JP4381143B2/ja not_active Expired - Lifetime
-
2012
- 2012-12-03 US US13/692,444 patent/US8889334B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2003044600A1 (en) | 2003-05-30 |
US8344088B2 (en) | 2013-01-01 |
US8889334B2 (en) | 2014-11-18 |
EP1472574A1 (en) | 2004-11-03 |
US20050058929A1 (en) | 2005-03-17 |
CN1606713B (zh) | 2011-07-06 |
JP2005512309A (ja) | 2005-04-28 |
JP4381143B2 (ja) | 2009-12-09 |
CN1606713A (zh) | 2005-04-13 |
EP1472574A4 (en) | 2005-06-08 |
KR20040066124A (ko) | 2004-07-23 |
AU2002227106A1 (en) | 2003-06-10 |
US20130164677A1 (en) | 2013-06-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4381143B2 (ja) | フォトリソグラフィー用スピンオン反射防止膜 | |
KR100897575B1 (ko) | 포토리소그래피용 스핀-온-글래스 무반사 코팅 | |
EP1190277B1 (en) | Semiconductor having spin-on-glass anti-reflective coatings for photolithography | |
KR100705849B1 (ko) | 포토리소그래피용 sog 반사방지 코팅 | |
JP2005512309A6 (ja) | フォトリソグラフィー用スピンオン反射防止膜 | |
KR100818678B1 (ko) | 포토리소그라피용 스핀온 유리 반사 방지 피막 | |
KR20030031120A (ko) | 포토리소그래피에 사용되는 스핀-온 유리 반사방지 코팅용흡수성 화합물 | |
JP2011221549A (ja) | フォトリソグラフィー用スピンオン反射防止膜 | |
KR100917241B1 (ko) | 포토리소그래피용 스핀-온 무반사 코팅 | |
JP2009175747A (ja) | フォトリソグラフィー用スピンオン反射防止膜 | |
JP2009280822A (ja) | フォトリソグラフィ用のスピンオングラス反射防止性コーティング | |
TW200401794A (en) | Spin-on-glass anti-reflective coatings for photolithography |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0105 | International application |
Patent event date: 20040515 Patent event code: PA01051R01D Comment text: International Patent Application |
|
PG1501 | Laying open of application | ||
A201 | Request for examination | ||
AMND | Amendment | ||
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20061114 Comment text: Request for Examination of Application |
|
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20071012 Patent event code: PE09021S01D |
|
AMND | Amendment | ||
E601 | Decision to refuse application | ||
PE0601 | Decision on rejection of patent |
Patent event date: 20080521 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20071012 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
|
J201 | Request for trial against refusal decision | ||
PJ0201 | Trial against decision of rejection |
Patent event date: 20080821 Comment text: Request for Trial against Decision on Refusal Patent event code: PJ02012R01D Patent event date: 20080521 Comment text: Decision to Refuse Application Patent event code: PJ02011S01I Appeal kind category: Appeal against decision to decline refusal Decision date: 20090407 Appeal identifier: 2008101008369 Request date: 20080821 |
|
A107 | Divisional application of patent | ||
AMND | Amendment | ||
PA0104 | Divisional application for international application |
Comment text: Divisional Application for International Patent Patent event code: PA01041R01D Patent event date: 20080919 |
|
PB0901 | Examination by re-examination before a trial |
Comment text: Amendment to Specification, etc. Patent event date: 20080919 Patent event code: PB09011R02I Comment text: Request for Trial against Decision on Refusal Patent event date: 20080821 Patent event code: PB09011R01I Comment text: Amendment to Specification, etc. Patent event date: 20080212 Patent event code: PB09011R02I Comment text: Amendment to Specification, etc. Patent event date: 20061114 Patent event code: PB09011R02I |
|
B601 | Maintenance of original decision after re-examination before a trial | ||
E801 | Decision on dismissal of amendment | ||
PB0601 | Maintenance of original decision after re-examination before a trial |
Comment text: Report of Result of Re-examination before a Trial Patent event code: PB06011S01D Patent event date: 20081007 |
|
PE0801 | Dismissal of amendment |
Patent event code: PE08012E01D Comment text: Decision on Dismissal of Amendment Patent event date: 20081007 Patent event code: PE08011R01I Comment text: Amendment to Specification, etc. Patent event date: 20080919 Patent event code: PE08011R01I Comment text: Amendment to Specification, etc. Patent event date: 20080212 Patent event code: PE08011R01I Comment text: Amendment to Specification, etc. Patent event date: 20061114 |
|
J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20080821 Effective date: 20090407 |
|
PJ1301 | Trial decision |
Patent event code: PJ13011S01D Patent event date: 20090407 Comment text: Trial Decision on Objection to Decision on Refusal Appeal kind category: Appeal against decision to decline refusal Request date: 20080821 Decision date: 20090407 Appeal identifier: 2008101008369 |