KR102657577B1 - 표시 장치 - Google Patents
표시 장치 Download PDFInfo
- Publication number
- KR102657577B1 KR102657577B1 KR1020160106276A KR20160106276A KR102657577B1 KR 102657577 B1 KR102657577 B1 KR 102657577B1 KR 1020160106276 A KR1020160106276 A KR 1020160106276A KR 20160106276 A KR20160106276 A KR 20160106276A KR 102657577 B1 KR102657577 B1 KR 102657577B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- display device
- insulating layer
- impact relieving
- impact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- 239000002086 nanomaterial Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000011368 organic material Substances 0.000 claims description 12
- 229910010272 inorganic material Inorganic materials 0.000 claims description 10
- 239000011147 inorganic material Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 239000004642 Polyimide Substances 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- -1 phenylene, siloxane Chemical class 0.000 claims description 6
- 230000035939 shock Effects 0.000 claims description 6
- 239000011148 porous material Substances 0.000 claims description 5
- 239000003575 carbonaceous material Substances 0.000 claims description 4
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 3
- 229920001971 elastomer Polymers 0.000 claims description 3
- 239000000806 elastomer Substances 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 149
- 238000005452 bending Methods 0.000 description 25
- 238000007789 sealing Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
도 2는 도 1에 도시된 표시 장치의 벤딩 상태를 나타낸 도면이다.
도 3은 도 1에 도시된 표시 장치의 일부를 나타낸 단면도이다.
도 4는 다른 실시예에 따른 표시 장치의 일부를 나타낸 단면도이다.
120: 배리어층
130: 제1 충격 완화층
Qd: 트랜지스터
131: 제2 충격 완화층
Claims (16)
- 기판 상에 위치하는 배리어층;
상기 배리어층 상에 위치하는 제1 충격 완화층;
상기 제1 충격 완화층 상에 위치하는 트랜지스터; 및
상기 트랜지스터와 상기 제1 충격 완화층 사이에 위치하는 버퍼층
을 포함하는 표시 장치로서,
상기 트랜지스터는,
상기 버퍼층 상에 배치되는 반도체층;
상기 반도체층 상에 배치되는 게이트 전극; 및
상기 반도체층과 전기적으로 연결되는 소스 전극 및 드레인 전극을 포함하고,
상기 표시 장치는,
상기 반도체층과 상기 게이트 전극 사이에 배치되고, 상기 반도체층과 상기 버퍼층을 덮는 제1 절연층;
상기 게이트 전극과 상기 소스 전극 및 상기 드레인 전극 사이에 배치되고, 상기 제1 절연층과 상기 게이트 전극을 덮는 제2 절연층; 및
상기 제2 절연층과 상기 소스 전극 및 상기 드레인 전극 사이에 배치되고, 상기 제2 절연층과 상기 제1 충격 완화층을 덮는 제3 절연층을 더 포함하고,
상기 제1 충격 완화층은 공극을 갖는 나노 구조를 포함하고,
상기 제3 절연층은 상기 제1 충격 완화층과 직접 접촉하는 표시 장치. - 제1항에 있어서,
상기 제1 충격 완화층은 카본계 물질 또는 옥사이드계 물질로 구성되는 표시 장치. - 제1항에 있어서,
상기 제1 충격 완화층의 공극률은 2% 내지 45%인 표시 장치. - 삭제
- 삭제
- 제1항에 있어서,
상기 버퍼층은, 상기 반도체층과 중첩하는 상기 제1 충격 완화층의 일부 영역을 덮도록 패턴화된 것인 표시 장치. - 삭제
- 제1항에 있어서,
상기 제1 절연층은 질화물 또는 산화물을 포함하는 무기 재료로 구성되는 표시 장치. - 삭제
- 제1항에 있어서,
상기 제2 절연층은 질화물 또는 산화물을 포함하는 무기 재료로 구성되는 표시 장치. - 삭제
- 제1항에 있어서,
상기 제3 절연층은 페닐렌, 실록산 또는 폴리이미드를 포함하는 유기 재료로 구성되는 표시 장치. - 제1항에 있어서,
상기 기판 및 상기 배리어층 사이에 위치하는 제2 충격 완화층을 더 포함하는 표시 장치. - 제13항에 있어서,
상기 제2 충격 완화층은 제1 충격 완화층과 동일한 재료로 구성되는 것인 표시 장치. - 제14항에 있어서,
상기 제2 충격 완화층은 유기 재료를 더 포함하는 표시 장치. - 제15항에 있어서,
상기 유기 재료는 폴리이미드, 폴리우레탄 계열의 엘라스토머, 폴리페닐렌 계열, 실록산 또는 실록산 하이브리드를 포함하는 표시 장치.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160106276A KR102657577B1 (ko) | 2016-08-22 | 2016-08-22 | 표시 장치 |
US15/618,869 US10177342B2 (en) | 2016-08-22 | 2017-06-09 | Display device |
CN201710684996.6A CN107768312B (zh) | 2016-08-22 | 2017-08-11 | 显示设备 |
EP17186034.9A EP3297050B1 (en) | 2016-08-22 | 2017-08-11 | Display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160106276A KR102657577B1 (ko) | 2016-08-22 | 2016-08-22 | 표시 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20180021962A KR20180021962A (ko) | 2018-03-06 |
KR102657577B1 true KR102657577B1 (ko) | 2024-04-15 |
Family
ID=59745704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020160106276A Active KR102657577B1 (ko) | 2016-08-22 | 2016-08-22 | 표시 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10177342B2 (ko) |
EP (1) | EP3297050B1 (ko) |
KR (1) | KR102657577B1 (ko) |
CN (1) | CN107768312B (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108598138B (zh) * | 2018-06-26 | 2021-04-30 | 武汉天马微电子有限公司 | 显示面板及其制备方法和显示装置 |
CN109037283A (zh) * | 2018-07-25 | 2018-12-18 | 云谷(固安)科技有限公司 | 一种基板、显示面板、显示装置及显示面板的制备方法 |
KR102594035B1 (ko) * | 2018-08-06 | 2023-10-25 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102630570B1 (ko) * | 2018-09-28 | 2024-01-29 | 엘지디스플레이 주식회사 | 표시장치 |
KR20210084913A (ko) | 2019-12-30 | 2021-07-08 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
CN111863898A (zh) * | 2020-07-20 | 2020-10-30 | 武汉华星光电半导体显示技术有限公司 | 显示面板 |
CN114784071A (zh) * | 2022-04-14 | 2022-07-22 | 深圳市华星光电半导体显示技术有限公司 | 柔性oled显示面板 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030118738A1 (en) * | 2001-12-21 | 2003-06-26 | Shuy Geoffrey Wen-Tai | Planarization of ceramic substrates using porous materials |
JP2007288078A (ja) * | 2006-04-20 | 2007-11-01 | Seiko Epson Corp | フレキシブル電子デバイス及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2870989B1 (fr) | 2004-05-27 | 2006-08-04 | Commissariat Energie Atomique | Substrat pour application electronique, comprenant un support flexible et son procede de fabrication |
JP2009239110A (ja) | 2008-03-27 | 2009-10-15 | Seiko Epson Corp | 半導体装置、電気光学装置および電子機器 |
KR20090103766A (ko) | 2008-03-27 | 2009-10-01 | 세이코 엡슨 가부시키가이샤 | 반도체 장치, 전기 광학 장치 및 전자 기기 |
KR101799031B1 (ko) | 2010-08-09 | 2017-12-21 | 삼성디스플레이 주식회사 | 터치 감지층을 포함하는 액정 표시 장치 및 그 제조 방법 |
KR101830894B1 (ko) * | 2011-09-09 | 2018-02-22 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
TWI520215B (zh) | 2012-09-19 | 2016-02-01 | 友達光電股份有限公司 | 元件基板及其製造方法 |
KR101965260B1 (ko) * | 2012-10-09 | 2019-04-04 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치용 어레이 기판 |
KR102097150B1 (ko) * | 2013-02-01 | 2020-04-03 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이 기판, 플렉서블 유기 발광 표시 장치 및 플렉서블 유기 발광 표시 장치 제조 방법 |
KR102099865B1 (ko) | 2013-08-12 | 2020-04-13 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102184673B1 (ko) * | 2013-08-14 | 2020-12-01 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
KR101529885B1 (ko) | 2013-09-11 | 2015-06-19 | 주식회사 상보 | 탄소나노튜브를 사용한 투명 전도성 필름 및 그 제조방법 |
KR102180037B1 (ko) * | 2013-11-06 | 2020-11-18 | 삼성디스플레이 주식회사 | 가요성 표시 장치 및 그 제조 방법 |
KR102147843B1 (ko) | 2014-01-02 | 2020-08-26 | 삼성디스플레이 주식회사 | 플렉시블 유기 발광 표시 장치 및 그 제조방법 |
CN104779265B (zh) * | 2014-01-14 | 2020-07-07 | 松下电器产业株式会社 | 发光装置 |
KR102240894B1 (ko) | 2014-02-26 | 2021-04-16 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
-
2016
- 2016-08-22 KR KR1020160106276A patent/KR102657577B1/ko active Active
-
2017
- 2017-06-09 US US15/618,869 patent/US10177342B2/en active Active
- 2017-08-11 EP EP17186034.9A patent/EP3297050B1/en active Active
- 2017-08-11 CN CN201710684996.6A patent/CN107768312B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030118738A1 (en) * | 2001-12-21 | 2003-06-26 | Shuy Geoffrey Wen-Tai | Planarization of ceramic substrates using porous materials |
JP2007288078A (ja) * | 2006-04-20 | 2007-11-01 | Seiko Epson Corp | フレキシブル電子デバイス及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20180021962A (ko) | 2018-03-06 |
US20180053913A1 (en) | 2018-02-22 |
EP3297050B1 (en) | 2022-06-15 |
CN107768312A (zh) | 2018-03-06 |
EP3297050A1 (en) | 2018-03-21 |
CN107768312B (zh) | 2023-09-08 |
US10177342B2 (en) | 2019-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102657577B1 (ko) | 표시 장치 | |
EP3716339B1 (en) | Flexible display device | |
US20240306484A1 (en) | Display device and method of manufacturing the same | |
US11217642B2 (en) | Display panel, manufacturing method thereof, and display device | |
US10186683B2 (en) | Flexible organic light emitting diode display panel | |
US10692953B2 (en) | Display apparatus | |
US11683954B2 (en) | Flexible display apparatus | |
KR102663900B1 (ko) | 유기발광표시장치 및 유기발광표시장치의 제조 방법 | |
US9647052B2 (en) | Flexible display substrate, flexible organic light emitting display device and method for manufacturing the same | |
KR102111562B1 (ko) | 표시 장치 | |
TWI624036B (zh) | 有機發光顯示裝置及其製造方法 | |
KR101784468B1 (ko) | 유기 발광 디스플레이 장치 및 그 제조방법 | |
CN105576000A (zh) | 有机发光显示装置 | |
KR20170127603A (ko) | 디스플레이 장치 | |
CN105810716A (zh) | 柔性显示装置及制备方法 | |
CN107768403B (zh) | 显示设备 | |
KR102456062B1 (ko) | 표시 장치 | |
CN111799308A (zh) | 显示装置 | |
CN111883562A (zh) | 显示装置 | |
KR102693569B1 (ko) | 표시 장치 | |
TWI548077B (zh) | 有機發光顯示設備 | |
US20190139463A1 (en) | Display device and method of manufacturing the same | |
KR20160027609A (ko) | 유기발광 디스플레이 장치 | |
KR102328104B1 (ko) | 플렉시블 전계발광 표시장치 | |
KR20150022399A (ko) | 표시 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20160822 |
|
PG1501 | Laying open of application | ||
A201 | Request for examination | ||
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20210813 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20160822 Comment text: Patent Application |
|
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20230725 Patent event code: PE09021S01D |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20240128 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20240409 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20240409 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration |