KR102551657B1 - 전자파 차폐구조 및 그 제조방법 - Google Patents
전자파 차폐구조 및 그 제조방법 Download PDFInfo
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- KR102551657B1 KR102551657B1 KR1020160168341A KR20160168341A KR102551657B1 KR 102551657 B1 KR102551657 B1 KR 102551657B1 KR 1020160168341 A KR1020160168341 A KR 1020160168341A KR 20160168341 A KR20160168341 A KR 20160168341A KR 102551657 B1 KR102551657 B1 KR 102551657B1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/002—Casings with localised screening
- H05K9/0022—Casings with localised screening of components mounted on printed circuit boards [PCB]
- H05K9/0024—Shield cases mounted on a PCB, e.g. cans or caps or conformal shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
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- H05K9/0007—Casings
- H05K9/002—Casings with localised screening
- H05K9/0022—Casings with localised screening of components mounted on printed circuit boards [PCB]
- H05K9/0024—Shield cases mounted on a PCB, e.g. cans or caps or conformal shields
- H05K9/0026—Shield cases mounted on a PCB, e.g. cans or caps or conformal shields integrally formed from metal sheet
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- H05K9/0007—Casings
- H05K9/002—Casings with localised screening
- H05K9/0022—Casings with localised screening of components mounted on printed circuit boards [PCB]
- H05K9/0037—Housings with compartments containing a PCB, e.g. partitioning walls
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H01L2924/191—Disposition
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- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/07—Electric details
- H05K2201/0707—Shielding
- H05K2201/0715—Shielding provided by an outer layer of PCB
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09909—Special local insulating pattern, e.g. as dam around component
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/0126—Dispenser, e.g. for solder paste, for supplying conductive paste for screen printing or for filling holes
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
도 2는 본 발명의 일 실시예에 따른 전자파 차폐구조의 제조 공정을 순차적으로 나타내는 도면이다.
도 3은 절연 댐을 형성하기 위한 소재 토출 장치를 나타내는 블록도이다.
도 4는 소재 토출 장치에 구비된 입력부를 통해 입력된 제1 노즐의 이동경로를 나타내는 도면이다.
도 5는 소재 토출 장치의 제1 노즐을 나타내는 도면이다.
도 6은 제1 노즐에 의해 절연 댐을 형성하는 예를 나타내는 도면이다.
도 7은 차폐 영역에 형성된 절연 댐을 나타내는 평면도이다.
도 8은 절연 댐으로 둘러 싸인 공간에 소재 토출 장치의 제2 노즐을 통해 절연 부재를 형성하는 예를 나타내는 도면이다.
도 9는 절연 댐 및 절연 몰딩 부재를 형성한 상태에서 차폐 막을 형성하는 예를 나타내는 도면이다.
도 10은 본 발명의 다른 실시예에 따른 전자파 차폐구조를 나타내는 단면도이다.
도 11 및 도 12는 절연구조의 측부를 따라 정밀조형 방식인 콘 젯 모드(cone-jet mode) 및 틸팅 젯 모드(tilting-jet mode)로 차폐 막을 형성하는 예를 각각 나타내는 도면들이다.
도 13a 내지 도 13d는 차폐 막의 측부를 틸팅 젯 모드로 형성하기 위한 다양한 EHD 잉크젯 프린팅 장치들을 개략적으로 나타내는 도면들이다.
도 14 및 도 15는 절연구조의 상면에 고속조형 방식인 젯팅 모드(jetting mode) 및 스프레잉 모드(spraying mode)로 차폐 막을 형성하는 예를 각각 나타내는 도면들이다.
도 16a 내지 도 16c는 모서리가 라운드 형성된 절연 댐의 단면과, 이 절연 댐을 형성하기 위한 노즐과, 절연 댐의 측부 및 상면 일부에 차폐 막을 형성한 예를 각각 나타나는 도면들이다.
도 17a 내지 도 17c는 측면이 경사진 절연 댐의 단면과, 이 절연 댐을 형성하기 위한 노즐과, 절연 댐의 측부 및 상면 일부에 차폐 막을 형성한 예를 각각 나타나는 도면들이다.
도 18a 내지 도 18c는 측면이 계단 형상을 갖는 절연 댐의 단면과, 이 절연 댐을 형성하기 위한 노즐과, 절연 댐의 측부 및 상면 일부에 차폐 막을 형성한 예를 각각 나타나는 도면들이다.
도 19는 노즐의 하단 일부가 막힌 예를 나타내는 도면이다.
도 20은 본 발명의 또 다른 실시예에 따른 전자파 차폐구조를 나타내는 단면도이다.
114: 접지 패드
115,117,119: 회로 소자
120: 절연구조
121: 절연 댐
125: 절연 부재
150: 차폐 막
200: 소재 토출 장치
Claims (23)
- 다수의 소자가 실장된 인쇄회로기판;
상기 다수의 소자 중 상기 인쇄회로기판의 외곽에 인접한 일부 소자를 덮는 절연 댐;
상기 절연 댐에 의해 마련된 공간으로 주입하여 상기 다수의 소자 중 나머지소자를 덮는 절연 부재; 및
상기 절연 댐과 상기 절연 부재의 외측면을 덮는 차폐 막;을 포함하고,
상기 절연 댐을 이루는 절연 소재의 점도는 상기 절연 부재를 이루는 절연 소재의 점도보다 큰, 전자파 차폐구조. - 제1항에 있어서,
상기 절연 댐은 외측면이 경사지게 형성된, 전자파 차폐구조. - 제1항에 있어서,
상기 절연 댐의 외측면은 계단 형상으로 단차 형성된, 전자파 차폐구조. - 제1항에 있어서,
상기 절연 댐의 상단 모서리 부분이 라운딩 형성된, 전자파 차폐구조. - 삭제
- 삭제
- 제1항에 있어서,
상기 절연 댐을 이루는 소재의 점도는 20,000cps~5,000,000cps이고,
상기 절연 부재를 이루는 소재의 점도는 100cps~30,000cps인, 전자파 차폐구조. - 제1항에 있어서,
상기 절연 댐 및 상기 절연 부재를 이루는 절연 소재는 유동성을 갖는 요변성(Thixotropy) 소재 또는 상변화(열가소성, 열경화성) 소재인, 전자파 차폐구조. - ◈청구항 9은(는) 설정등록료 납부시 포기되었습니다.◈제8항에 있어서,
상기 요변성 소재는 합성미분 실리카, 벤토나이트(bentonite), 미립자 표면처리 탄산칼슘, 수소 첨가 피마자유, 금속 석검계, 알루미늄 스테아레이트(aluminum stearate), 폴리이미드 왁스(polyamide wax), 산화 폴리에틸렌계 및 아마인 중합유 중 적어도 하나를 포함하는, 전자파 차폐구조 - ◈청구항 10은(는) 설정등록료 납부시 포기되었습니다.◈제8항에 있어서,
상기 상변화 소재는 폴리 우레탄(polyurethane), 폴리요소(polyurea), 폴리염화 비닐(polyvinyl chloride), 폴리스티렌(polystyrene), ABS 수지(acrylonitrile butadiene styrene), 폴리아미드(polyamide), 아크릴(acrylic), 에폭시(epoxy), 실리콘(silicone) 및 PBTP(polybutylene terephthalate) 중 적어도 하나를 포함하는, 전자파 차폐구조. - ◈청구항 11은(는) 설정등록료 납부시 포기되었습니다.◈제1항에 있어서,
상기 차폐 막을 이루는 소재의 점도는 1,000cps~100,000cps인, 전자파 차폐구조. - ◈청구항 12은(는) 설정등록료 납부시 포기되었습니다.◈제1항에 있어서,
상기 절연 댐은 상단에서 하단으로 갈수록 폭이 점차 넓게 형성된, 전자파 차폐구조. - ◈청구항 13은(는) 설정등록료 납부시 포기되었습니다.◈제1항에 있어서,
상기 절연 댐의 상면은 평탄하게 형성된, 전자파 차폐구조. - ◈청구항 14은(는) 설정등록료 납부시 포기되었습니다.◈제13항에 있어서,
상기 절연 부재의 상면은 상기 절연 댐의 상면과 동일 평면 상에 위치하는, 전자파 차폐구조. - ◈청구항 15은(는) 설정등록료 납부시 포기되었습니다.◈제1항에 있어서,
상기 차폐 막은 전기 전도성 소재가 분무 형태로 분사되어 미리 설정된 두께로 형성된, 전자파 차폐구조. - ◈청구항 16은(는) 설정등록료 납부시 포기되었습니다.◈제1항에 있어서,
상기 차폐 막은 차폐 필름으로 이루어진, 전자파 차폐구조. - 제1항에 있어서,
상기 차폐 막은,
상기 절연 댐의 외측면과 상면의 일 부분을 덮는 제1 부분; 및
상기 절연 댐의 상면의 나머지 부분과 상기 절연 부재의 상면을 덮는 제2 부분;을 포함하는, 전자파 차폐구조. - ◈청구항 18은(는) 설정등록료 납부시 포기되었습니다.◈제17항에 있어서,
상기 차폐 막의 제1 및 제2 부분의 경계부는 서로 접하는, 전자파 차폐구조. - ◈청구항 19은(는) 설정등록료 납부시 포기되었습니다.◈제17항에 있어서,
상기 차폐 막의 제1 및 제2 부분의 경계부는 상호 오버랩되는, 전자파 차폐구조. - ◈청구항 20은(는) 설정등록료 납부시 포기되었습니다.◈제1항에 있어서,
각 소자 간의 간격은 0.8㎜인, 전자파 차폐구조. - 다수의 소자가 실장된 인쇄회로기판의 차폐 영역의 외곽을 따라 형성하되 상기 다수의 소자 중 상기 인쇄회로기판의 외곽에 인접한 일부 소자를 덮도록 절연 댐을 형성하는 단계;
상기 절연 댐에 의해 마련된 공간으로 절연 소재를 주입하여 상기 다수의 소자 중 나머지 소자를 덮는 절연 부재를 형성하는 단계; 및
상기 절연 댐의 측면 및 상면과, 상기 절연 부재의 상면에 전기 전도성 소재로 덮어 차폐 막을 형성하는 단계;를 포함하고,
상기 절연 댐을 이루는 절연 소재의 점도는 상기 절연 부재를 이루는 절연 소재의 점도보다 큰, 전자파 차폐구조의 제조방법. - 제21항에 있어서,
상기 차폐 막 형성 단계는 상기 차폐 막이 미리 설정된 두께를 갖도록 상기 전기 전도성 소재를 분무 형태 또는 미세한 액적 형태로 토출하는, 전자파 차폐구조의 제조방법. - 제22항에 있어서,
상기 차폐 막 형성 단계는,
상기 절연 댐의 외측면과 상면의 일 부분을 덮는 제1 부분을 형성하는 단계; 및
상기 절연 댐의 상면의 나머지 부분과 상기 절연 부재의 상면을 덮는 제2 부분을 형성하는 단계;를 포함하는, 전자파 차폐구조의 제조방법.
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