KR102116055B1 - 무전해 니켈 스트라이크 도금액 - Google Patents
무전해 니켈 스트라이크 도금액 Download PDFInfo
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/072—Electroless plating, e.g. finish plating or initial plating
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Abstract
Description
도 2는 비교예 1의 무전해 니켈 도금액에 의해 얻어진 니켈 도금 피막의 SEM 사진이다.
도 3은 비교예 2의 무전해 니켈 도금액에 의해 얻어진 니켈 도금 피막의 SEM 사진이다.
도 4는 실시예 1 및 비교예 1에서 얻어진 니켈 도금 피막에 대하여 저전위 전해를 행한 결과를 나타내는 그래프이다.
Claims (14)
- 구리재의 표면에 니켈 도금 피막을 형성하기 위하여 이용되는 무전해 니켈 스트라이크 도금액으로서,
니켈 환산으로 0.002~1g/L의 수용성 니켈염;
합계 함유량이 0.5~5g/L인 1종 이상의 카르복시산 또는 그 염; 및
합계 함유량이 2~10g/L인 디메틸아민보란, 트리메틸아민보란, 히드라진, 히드라진 유도체로 이루어진 군으로부터 선택되는 1종 이상의 환원제;를 포함하는 것을 특징으로 하는 무전해 니켈 스트라이크 도금액. - 제1항에 있어서,
상기 카르복시산은, 모노카르복시산, 디카르복시산, 트리카르복시산, 히드록시디카르복시산, 히드록시트리카르복시산, 방향족 카르복시산, 옥소카르복시산 및 아미노산으로 이루어진 군으로부터 선택되는 1종 이상인 것인, 무전해 니켈 스트라이크 도금액. - 제2항에 있어서,
상기 모노카르복시산은, 포름산, 아세트산, 프로피온산, 부티르산으로 이루어진 군으로부터 선택되는 1종 이상인 것인, 무전해 니켈 스트라이크 도금액. - 제2항에 있어서,
상기 디카르복시산은, 옥살산, 말론산, 호박산, 글루콘산, 아디핀산, 푸말산, 말레인산으로 이루어진 군으로부터 선택되는 1종 이상인 것인, 무전해 니켈 스트라이크 도금액. - 제2항에 있어서,
상기 트리카르복시산은 아코니트산인 것인, 무전해 니켈 스트라이크 도금액. - 제2항에 있어서,
상기 히드록시디카르복시산은, 젖산, 사과산으로 이루어진 군으로부터 선택되는 1종 이상인 것인, 무전해 니켈 스트라이크 도금액. - 제2항에 있어서,
상기 히드록시트리카르복시산은 구연산인 것인, 무전해 니켈 스트라이크 도금액. - 제2항에 있어서,
상기 방향족 카르복시산은, 벤조산, 프탈산, 살리실산으로 이루어진 군으로부터 선택되는 1종 이상인 것인, 무전해 니켈 스트라이크 도금액. - 제2항에 있어서,
상기 옥소카르복시산은 피루빈산인 것인, 무전해 니켈 스트라이크 도금액. - 제2항에 있어서,
상기 아미노산은, 아르기닌, 아스파라긴, 아스파라긴산, 시스테인, 글루타민산, 글리신으로 이루어진 군으로부터 선택되는 1종 이상인 것인, 무전해 니켈 스트라이크 도금액. - 제1항 내지 제10항 중 어느 한 항에 있어서,
상기 무전해 니켈 스트라이크 도금액은, 상기 수용성 니켈염, 상기 카르복시산 또는 그 염, 및 물을 혼합하여 교반함으로써 니켈 착체를 포함하는 수용액을 조제한 후, 상기 수용액에 상기 환원제를 혼합하여 교반함으로써 조제된 것인, 무전해 니켈 스트라이크 도금액. - 삭제
- 삭제
- 삭제
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JP2017126053A JP6474860B2 (ja) | 2017-06-28 | 2017-06-28 | 無電解ニッケルストライクめっき液及びニッケルめっき皮膜の成膜方法 |
JPJP-P-2017-126053 | 2017-06-28 | ||
PCT/JP2018/023631 WO2019004057A1 (ja) | 2017-06-28 | 2018-06-21 | 無電解ニッケルストライクめっき液及びニッケルめっき皮膜の成膜方法 |
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KR102116055B1 true KR102116055B1 (ko) | 2020-05-27 |
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KR1020207005660A Active KR102320245B1 (ko) | 2017-06-28 | 2018-06-21 | 니켈 도금 피막의 형성 방법 |
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US (1) | US20200123660A1 (ko) |
EP (2) | EP4086368A1 (ko) |
JP (1) | JP6474860B2 (ko) |
KR (2) | KR102116055B1 (ko) |
CN (1) | CN110352266B (ko) |
SG (1) | SG11201908406XA (ko) |
TW (1) | TWI687545B (ko) |
WO (1) | WO2019004057A1 (ko) |
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JP6466521B2 (ja) * | 2017-06-28 | 2019-02-06 | 小島化学薬品株式会社 | 無電解めっきプロセス |
US20220389588A1 (en) * | 2019-11-20 | 2022-12-08 | Atotech Deutschland GmbH & Co. KG | Electroless nickel alloy plating baths, a method for deposition of nickel alloys, nickel alloy deposits and uses of such formed nickel alloy deposits |
KR20230091902A (ko) * | 2020-10-20 | 2023-06-23 | 세이렌가부시끼가이샤 | 금층을 갖는 도전 필름 |
KR20250016937A (ko) | 2023-07-26 | 2025-02-04 | 주식회사 에스티아이씨 | 반도체 테스트 핀 도금 방법 및 이용하여 도금된 반도체 테스트핀 |
US20250109499A1 (en) * | 2023-09-29 | 2025-04-03 | Macdermid Enthone Inc. | Bendable Nickel Plating on Flexible Substrates |
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JP2016167386A (ja) * | 2015-03-09 | 2016-09-15 | 国立大学法人京都大学 | 強磁性金属ナノ構造体と二次元構造基材との複合材、その製造方法、およびそれを用いた電極材料 |
KR101660520B1 (ko) * | 2015-04-08 | 2016-09-29 | 한국생산기술연구원 | 구리 및 니켈의 연속 무전해 도금방법 및 이를 이용하여 제조된 도금층 |
JP6466521B2 (ja) * | 2017-06-28 | 2019-02-06 | 小島化学薬品株式会社 | 無電解めっきプロセス |
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- 2018-06-21 US US16/485,990 patent/US20200123660A1/en not_active Abandoned
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JP2015110821A (ja) * | 2013-12-06 | 2015-06-18 | 学校法人関東学院 | アルミニウム材の表面にニッケル層を形成する方法、その形成方法を用いた半導体ウエハのアルミニウム電極表面へのニッケル層の形成方法及びその形成方法を用いて得られる半導体ウエハ基板 |
JP2016160504A (ja) * | 2015-03-03 | 2016-09-05 | 学校法人関東学院 | 無電解Ni/Auめっき皮膜の形成方法及びその形成方法で得られた無電解Ni/Auめっき皮膜 |
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JP2019007068A (ja) | 2019-01-17 |
WO2019004057A1 (ja) | 2019-01-03 |
EP4086368A1 (en) | 2022-11-09 |
US20200123660A1 (en) | 2020-04-23 |
TW201905236A (zh) | 2019-02-01 |
KR20190102099A (ko) | 2019-09-02 |
KR102320245B1 (ko) | 2021-10-29 |
SG11201908406XA (en) | 2019-10-30 |
TWI687545B (zh) | 2020-03-11 |
CN110352266B (zh) | 2021-02-12 |
EP3650579A4 (en) | 2021-10-13 |
JP6474860B2 (ja) | 2019-02-27 |
KR20200023541A (ko) | 2020-03-04 |
CN110352266A (zh) | 2019-10-18 |
EP3650579A1 (en) | 2020-05-13 |
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