KR101876960B1 - 박막형성 장치 - Google Patents
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- KR101876960B1 KR101876960B1 KR1020170031670A KR20170031670A KR101876960B1 KR 101876960 B1 KR101876960 B1 KR 101876960B1 KR 1020170031670 A KR1020170031670 A KR 1020170031670A KR 20170031670 A KR20170031670 A KR 20170031670A KR 101876960 B1 KR101876960 B1 KR 101876960B1
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- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 239000002994 raw material Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 230000014759 maintenance of location Effects 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000001182 laser chemical vapour deposition Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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Abstract
Description
도 2는 본 발명에 따른 챔버유닛을 개략적으로 나타낸 사시도,
도 3은 본 발명에 따른 챔버유닛을 개략적으로 나타낸 단면도,
도 4는 본 발명에 따른 챔버유닛의 하면을 개략적으로 나타낸 배면도,
도 5는 본 발명에 따른 레이저 화학기상증착을 실행한 후의 균일한 증착막을 나타낸 도이다.
30 : 배관 110 : 가스체류공간부
120 : 원료 가스 도입구 130 : 열풍구
140 : 배기구 150 : 바이패스 라인(bypass line)
Claims (8)
- 기판의 표면상에 원료가스가 공급되고, 공급된 원료가스에 레이저 광을 조사하며, 레이저 광과 반응한 원료가스에 의해 기판에 박막을 형성시켜 기판의 결함을 보정하는 박막형성 장치에 있어서,
상기 기판의 상부에 챔버유닛이 구비되고,
상기 챔버유닛에는 원료가스를 체류시키는 가스체류공간부가 형성되고, 상기 가스체류공간부의 상단 개구부를 덮는 창이 형성되어 상기 창의 상부에서 레이저 광이 조사되되,
상기 챔버유닛의 내부로 가스를 공급 및 배기시키는 배관이 다수개 연결되고,
상기 챔버유닛에는 상기 가스체류공간부의 일측면으로부터 원료가스를 공급시키는 원료공급수단과, 가공부분 주변부의 기판을 국부적으로 가열하기 위한 가열가스를 공급시키는 열풍공급수단과, 상기 가스체류공간부에서 배출되는 원료가스 및 가열가스를 배기하는 배기수단이 형성되되,
상기 챔버유닛의 내부에는 상기 원료공급수단, 열풍공급수단 및 배기수단이 상기 배관과 각각 연통되도록 연결시켜주는 다수의 내부통로가 형성되며,
상기 원료공급수단은 상기 가스체류공간부에 원료 가스 도입구가 형성되어 가스체류공간부의 측면으로부터 원료가스가 분출되고,
상기 열풍공급수단은 상기 챔버유닛 저면에 상기 가스체류공간부의 하단 개구부를 중심으로 방사상으로 열풍구가 다수개 형성되어 가열가스가 분출됨으로써 기판의 가공부분과 상기 가공부분의 주변부를 국부적으로 가열시키며,
상기 원료 가스(source gas)는 기판의 상면에 수직으로 하강하는 흐름을 방지하기 위해, 상기 원료 가스 도입구는 상기 기판의 상면을 향하도록 소정각도 기울어져 기판의 가공부분으로 원료가스를 분출시킴으로써, 상기 원료 가스 도입구로부터 분출된 원료가스는 방향성을 갖도록 유도되어 원료가스의 확산을 방지하여 증착 분위기를 효과적으로 형성시킬 수 있되,
상기 배기수단은 상기 챔버유닛 저면에 상기 원료 가스 도입구와 대향되도록 원료가스 공급방향의 전방에 배기구가 형성되고,
상기 배기구는 상기 가스체류공간부의 하단 개구부와 상기 열풍구 사이에 형성되되, 상기 배기구는 원료가스 공급방향과 수직을 이루는 수평방향으로 다수개 형성되어 원료가스를 가스 체류 공간부 중심의 가공부분으로 밀집도를 향상시키며,
상기 챔버유닛에는 상기 원료 가스 도입구로부터 분기되는 바이패스 라인(Bypass Line)이 형성되어 기판이 존재하지 않거나 가공을 진행하지 않을 때, 원료 가스 도입구의 원료가스를 흡입하여 가스체류공간부로 분사되지 않도록 방지하는 것을 특징으로 하는 박막형성 장치.
- 삭제
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- 제1항에 있어서,
상기 배관에는 공급 및 배기되는 가스의 온도를 측정하기 위한 온도센서와, 가스의 유량을 조절하기 위한 유량 조절 장치가 각각 구비되어 가스의 유량을 조절하는 것을 특징으로 하는 박막형성 장치.
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KR1020170031670A KR101876960B1 (ko) | 2017-03-14 | 2017-03-14 | 박막형성 장치 |
CN201810017693.3A CN108570664A (zh) | 2017-03-14 | 2018-01-09 | 薄膜形成装置 |
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