KR101314398B1 - Wafer processing tape - Google Patents

Abstract

The subject of this invention is the expandable wafer processing tape used when dividing an adhesive bond layer along a chip | tip by an expansion, WHEREIN: It has uniform expandability suitable for the process of dividing an adhesive bond layer by an expand, and heat shrinks. The heat shrinkage property is sufficient even if a high temperature and a long heat quantity are not given in the process, and the pick-up failure due to the relaxation after the heat shrinkage process is not caused.
The tape 10 for wafer processing consists of a base film 11, the adhesive layer 12 formed on the base film 11, and the adhesive bond layer 13 formed on the adhesive layer 12, and a base film ( 11) is a thermoplastic crosslinked resin having a thermal conductivity of 0.15 W / m · K or more.

Description

Wafer processing tape {WAFER PROCESSING TAPE}

The present invention relates to an expandable wafer processing tape used for dividing an adhesive layer along a chip by an expand.

In the manufacturing process of a semiconductor device such as an IC, in order to thin the wafer after circuit pattern formation, a backgrinding step of grinding the back surface of the wafer, and a sticky and stretchable wafer processing tape are attached to the back surface of the semiconductor wafer, and then the wafer is placed in units of chips. The dicing step of dividing, the process of expanding the tape for wafer processing, the process of picking up the chip | tip which divided | segmented, and the picked-up chip are adhere | attached to a lead frame or a package board | substrate, etc. Or in a laminated package, semiconductor chips are laminated | stacked and adhere | attached A die bonding (mount) process is performed.

In the said backgrinding process, the surface protection tape for protecting the circuit pattern formation surface (wafer surface) of a wafer from contamination is used. When peeling this surface protection tape from the wafer surface after completion | finish of back surface grinding of a wafer, after bonding the below-mentioned tape for wafer processing (dicing die-bonding tape) to the back surface of a wafer, dicing and die-bonding to a suction table is carried out. After fixing the tape side and giving a surface protection tape the process which reduces the adhesive force with respect to a wafer, a surface protection tape is peeled off. The wafer from which the surface protection tape has been peeled off is then lifted from the adsorption table in a state where the dicing die-bonding tape is bonded to the back surface, and the process proceeds to the next dicing step. In addition, the process which reduces said adhesive force means an ultraviolet irradiation process when a surface protection tape consists of energy-beam curable components, such as an ultraviolet-ray, and means a heat irradiation (heating) process when a surface protection tape consists of a thermosetting component. .

In the dicing process or the mounting process after the said backgrinding process, the dicing die-bonding tape in which the adhesive layer and the adhesive bond layer were laminated | stacked in this order on the base film is used. In general, when using a dicing die-bonding tape, first, the adhesive layer of a dicing die-bonding tape is affixed on the back surface of a semiconductor wafer, and a semiconductor wafer is fixed, and a semiconductor wafer and an adhesive bond layer are used using a dicing blade. Is diced in chip units. Thereafter, the tape is expanded in the radial direction of the semiconductor wafer, whereby an expand step of widening the distance between chips is performed. This expand process is performed in order to improve the recognition of a chip by a CCD camera or the like in a subsequent pick-up process, and to prevent chip damage caused by contact between adjacent chips when picking up the chip. Thereafter, in the pick-up step, the chip is peeled off from the pressure-sensitive adhesive layer together with the adhesive layer and picked up, and is directly adhered to a lead frame, a package substrate, or the like in the mounting step. Thus, by using a dicing die-bonding tape, it becomes possible to directly adhere | attach the chip | tip with an adhesive bond layer to a lead frame, a package board | substrate, etc., and abbreviate | omits the adhesive application process and the process of adhering a die bonding film to each chip separately. can do.

However, in the dicing step, since the semiconductor wafer and the adhesive layer are diced together using the dicing blade as described above, not only the cutting chips of the wafer but also the cutting chips of the adhesive layer are generated. Since the cutting chips of the adhesive layer themselves have an adhesive function, when the cutting chips are stuck in the dicing grooves of the wafer, chips stick to each other and pick-up failures occur, and the production yield of the semiconductor device is lowered.

In order to solve the above problem, in the dicing step, only the semiconductor wafer is diced with the blade, and in the expanding step, the dicing die-bonding tape is expanded to divide the adhesive layer corresponding to the individual chips. This is proposed (for example, patent document 1-[0056]). According to the method of dividing the adhesive layer using such a tension during expansion, the cutting chips of the adhesive do not occur and do not adversely affect the pick-up process.

Moreover, as a cutting method of a semiconductor wafer, the so-called stealth dicing method which enables cutting | disconnection of a wafer non-contactedly using the laser processing apparatus is proposed in recent years.

For example, Patent Document 2 discloses a multi-photon inside a semiconductor substrate by irradiating laser light while focusing the light inside the semiconductor substrate to which the sheet is attached via a die bond resin layer (adhesive layer) as a stealth dicing method. A semiconductor substrate comprising the steps of forming a modified region by absorption, forming a cut scheduled portion in the modified region, and cutting the semiconductor substrate and the die bond resin layer along the cut scheduled portion by expanding (expanding) the sheet. The cutting method of is disclosed.

In addition, as another method of the cutting method of the semiconductor wafer using a laser processing apparatus, for example, Patent Document 3 corresponds to a step of attaching an adhesive film (adhesive layer) for die bonding on the back surface of the semiconductor wafer, and the back surface. The process of attaching a protective adhesive tape which can be stretched to the adhesive film side of a semiconductor wafer with an adhesive film, and irradiating a laser beam along the street from the surface of the semiconductor wafer with a protective adhesive tape, and dividing it into individual semiconductor chips To expand (expand) the protective adhesive tape, impart a tensile force to the adhesive film, break the adhesive film for each semiconductor chip, and remove the semiconductor chip having the broken adhesive film from the protective adhesive tape. A method of dividing a semiconductor wafer including a step has been proposed.

According to the cutting methods of the semiconductor wafers described in these Patent Documents 2 and 3, since the semiconductor wafer is cut in a non-contact manner by the irradiation of laser light and the tape expansion, the physical load on the semiconductor wafer is less and the blade die of the mainstream The semiconductor wafer can be cut without generating cutting chips (chipping) of the wafer in the case of performing the cutting. In addition, since the adhesive layer is divided by the expand, cutting chips of the adhesive layer are not generated. For this reason, it is attracting attention as an excellent technique which can replace blade dicing.

In the dicing die-bonding tape used when dividing an adhesive bond layer by the expansion as described in the said patent documents 1-3, in order to reliably divide an adhesive bond layer according to a semiconductor chip, the base film is uniform and isotropic Scalability is required. This is because when a location where expansion is insufficient locally occurs in the base film, sufficient tensile force is not transmitted to the adhesive layer at that location, and the adhesive layer cannot be divided.

By the way, generally, when extrusion molding a base film or winding a tape in roll shape as a product, an anisotropic force acts on a dicing die-bonding tape, a strain stress arises, and the expandability of a base film is nonuniform and anisotropic It is known to become an enemy. Therefore, many proposals are made | formed so far as a dicing die-bonding tape which has uniform expandability (for example, refer patent documents 4-9).

In addition, since the tape is relaxed after the expansion, the gap between the individual chips cannot be maintained stably, and there is a problem in that contact between adjacent chips occurs during transport and re-adhesion of the adhesive layer occurs. In order to solve this problem, the method which makes the said tape a heat shrinkable tape, heats and tensions a tape after the said dividing process, and maintains the space | interval between chips is proposed (for example, refer patent document 10, 11). ). As said heat shrinkable tape, polyvinyl chloride tape is said to be preferable (for example, refer patent document 10). However, when incineration after use of the polyvinyl chloride tape, there is a fear that dioxin or a chlorinated aromatic hydrocarbon, which is an analog thereof, is generated to put a load on the environment.

Japanese Patent Application Publication No. 2007-5530 Japanese Patent Application Laid-Open No. 2003-338467 Japanese Patent Application Laid-open No. 2004-273895 Japanese Patent Application Laid-open No. Hei 6-134941 Japanese Patent Application Laid-Open No. 11-199840 Japanese Patent Application Laid-open No. 2000-273416 Japanese Patent Application Publication No. 2001-11207 Japanese Patent Application Publication No. 2003-158098 Japanese Patent Application Publication No. 2009-231699 Japanese Patent Application Laid-Open No. 2002-334852 Japanese Patent Application Publication No. 2007-27562

As described above, according to the method of using a heat shrinkable tape and heating and tensioning the tape after the dividing step to maintain the gap between the chips, it is possible to prevent the adhesive layer from re-adhesion by loosening the tape after expansion. . However, depending on the performance of the heat-shrinkable tape to be used, relaxation may occur after the heat-shrinkage process if a high-temperature, long-term heat quantity is not given, which may cause pickup failure in the pickup process.

The present invention has uniform expandability suitable for a step of dividing the adhesive layer by an expand, and exhibits sufficient heat shrinkability even if a high temperature and long-term heat amount are not given in the heat shrink process, and furthermore, due to relaxation after the heat shrink process An object of the present invention is to provide a wafer processing tape that does not cause pickup failure.

MEANS TO SOLVE THE PROBLEM In order to solve the above subject, the 1st aspect of this invention is an expandable wafer process tape used when dividing an adhesive bond layer along a chip | tip by an expanded | expanded, The adhesive layer formed on the base film, the said base film, and the said adhesive It has an adhesive bond layer formed on a layer, The said base film is characterized by consisting of a thermoplastic crosslinking resin whose thermal conductivity prescribed | regulated to JISA1412 is 0.15 W / m * K or more.

In the tape for wafer processing of the first aspect, the base film is formed using a thermoplastic crosslinked resin having a thermal conductivity of 0.15 W / m · K or more, and thus has uniform expandability suitable for a process of dividing the adhesive layer by an expander, for example, DDS. Tape for wafer processing that exhibits sufficient heat shrinkability even when high heat and long-term heat is not given in the heat shrinkage process in (the apparatus represented by DDS-2300 manufactured by Disco Co., Ltd.), and does not cause pickup failure due to relaxation after the heat shrinkage process. You can do

That is, in the non-crosslinked resin, the molecular chains are oriented in the processing direction, so that the expandability is anisotropic. However, when the molecular chains are crosslinked, the expandability becomes more isotropic, and even in the expansion process for dividing the adhesive layer. It can be used preferably. In addition, since the thermal conductivity of the substrate is 0.15 W / m · K or more, the resin is easily shrunk by heating, and therefore, the resin is also suitable for the step of removing the loosening generated in the expansion step. In addition, since the thermal conductivity of the substrate is 0.15 W / m · K or more, the resin is easily shrunk by heating, so that pickup failure due to relaxation after the heat shrinkage step is not caused. In addition, since the thermal conductivity of the base material is 0.15 W / m · K or more, it is not necessary to give a high temperature and long-term heat amount in the heat shrinkage step, causing a pickup failure due to the adhesion of the pressure-sensitive adhesive layer and the adhesive layer by heating. Can be prevented.

According to a second aspect of the present invention, in the tape for wafer processing according to the first aspect, the thermoplastic crosslinked resin is a ethylene- (meth) acrylic acid binary copolymer or an ethylene- (meth) acrylic acid- (meth) acrylic acid alkyl ester ternary member. It is characterized in that the ionomer resin crosslinked with a metal ion of the copolymer.

According to a third aspect of the present invention, in the tape for wafer processing according to the first aspect, the thermoplastic crosslinking resin crosslinks low density polyethylene or ultra low density polyethylene by electron beam irradiation.

According to a fourth aspect of the present invention, in the tape for wafer processing according to the first aspect, the thermoplastic crosslinking resin crosslinks the ethylene-vinyl acetate copolymer by electron beam irradiation.

The fifth aspect of the present invention is the tape for wafer processing according to any one of the first to fourth aspects, wherein the content of chlorine atoms of the thermoplastic crosslinked resin is less than 1 mass%.

According to the tape for wafer processing of a 5th aspect from 2nd aspect, the tape for wafer processing of low environmental load can be provided, solving the said subject.

According to a sixth aspect of the present invention, in the tape for wafer processing according to any one of the first to fourth aspects, the tape for wafer processing is

(a) bonding the surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the semiconductor wafer,

(c) bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor wafer while heating the semiconductor wafer at 70 to 80 ° C;

(d) peeling a surface protection tape from the semiconductor wafer wafer surface;

(e) irradiating a laser beam to a portion to be divided of the semiconductor wafer to form a modified region by multiphoton absorption in the wafer;

(f) expanding the wafer processing tape to divide the semiconductor wafer and the adhesive layer along a dividing line to obtain a plurality of semiconductor chips with the adhesive layer;

(g) heat shrinking a portion of the wafer processing tape that does not overlap with the semiconductor chip to remove the loosening generated in the expand process to maintain the gap of the semiconductor chip;

(h) It is used for the manufacturing method of the semiconductor device containing the process of picking up the said semiconductor chip with an adhesive bond layer from the adhesive layer of the tape for a wafer process.

According to a seventh aspect of the present invention, in the tape for wafer processing according to any one of the first to fourth aspects, the tape for wafer processing is

(a) bonding the surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the semiconductor wafer,

(c) bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor wafer while the semiconductor wafer is heated at 70 to 80 ° C;

(d) peeling a surface protection tape from the semiconductor wafer surface;

(e) irradiating laser light along the dividing line from the surface of the semiconductor wafer and dividing it into individual semiconductor chips;

(f) expanding the wafer processing tape to divide the adhesive layer for each of the semiconductor chips to obtain a plurality of semiconductor chips with the adhesive layer;

(g) heat shrinking a portion of the wafer processing tape that does not overlap with the semiconductor chip to remove the loosening generated in the expand process to maintain the gap of the semiconductor chip;

(h) It is used for the manufacturing method of the semiconductor device containing the process of picking up the said semiconductor chip with an adhesive bond layer from the adhesive layer of the tape for a wafer process.

In an eighth aspect of the present invention, in the tape for wafer processing according to any one of the first to fourth aspects, the tape for wafer processing is

(a) bonding the surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the semiconductor wafer,

(c) bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor wafer while the semiconductor wafer is heated at 70 to 80 ° C;

(d) peeling a surface protection tape from the semiconductor wafer surface;

(e) cutting the semiconductor wafer along a dividing line using a dicing blade to divide the semiconductor wafer into individual semiconductor chips;

(f) expanding the wafer processing tape to divide the adhesive layer for each of the semiconductor chips to obtain a plurality of semiconductor chips with the adhesive layer;

(g) heat shrinking a portion of the wafer processing tape that does not overlap with the semiconductor chip to remove the loosening generated in the expand process to maintain the gap of the semiconductor chip;

(h) It is used for the manufacturing method of the semiconductor device containing the process of picking up the said semiconductor chip with an adhesive bond layer from the adhesive layer of the tape for a wafer process.

A ninth aspect of the present invention is a tape for wafer processing according to any one of the first to fourth aspects, wherein the tape for wafer processing is

(a) cutting the semiconductor wafer on which the circuit pattern is formed using a dicing blade along a dividing line predetermined line to a depth less than the thickness of the wafer;

(b) bonding a surface protection tape to the surface of the semiconductor wafer;

(c) a backgrinding step of grinding the back surface of the semiconductor wafer and dividing it into individual semiconductor chips;

(d) bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor chip while heating the semiconductor wafer at 70 to 80 ° C;

(e) peeling a surface protection tape from the semiconductor wafer surface;

(f) expanding the wafer processing tape to divide the adhesive layer for each of the semiconductor chips to obtain a plurality of semiconductor chips with the adhesive layer;

(g) heat shrinking a portion of the wafer processing tape that does not overlap with the semiconductor chip to remove the loosening generated in the expand process to maintain the gap of the semiconductor chip;

(h) It is used for the manufacturing method of the semiconductor device containing the process of picking up the said semiconductor chip with an adhesive bond layer from the adhesive layer of the tape for a wafer process.

In the tape for wafer processing of the present invention, since the base film is constituted using a thermoplastic crosslinked resin having a thermal conductivity of 0.15 W / m · K or more, it has a uniform expandability suitable for a process of dividing the adhesive layer by an expand and in a heat shrink process. It is possible to obtain a tape for wafer processing which exhibits sufficient heat shrinkage even without giving a high temperature and long-term heat quantity and does not cause pick-up failure due to relaxation after the heat shrinkage process.

That is, in the non-crosslinked resin, the molecular chains are oriented in the processing direction, so that the expandability is anisotropic. However, when the molecular chains are crosslinked, the expandability becomes more isotropic, and even in the expansion step for dividing the adhesive layer. It can be used properly. In addition, since the thermal conductivity of the substrate is 0.15 W / m · K or more, the resin is easily shrunk by heating, and therefore, the resin is also suitable for the step of removing the loosening generated in the expansion step. In addition, since the thermal conductivity of the substrate is 0.15 W / m · K or more, the resin is easily shrunk by heating, so that pick-up failure due to relaxation after the heat shrinkage process is not caused.

1 is a cross-sectional view showing a state in which a tape for wafer processing and a surface protection tape according to an embodiment of the present invention are bonded to a semiconductor wafer.
2 is a cross-sectional view showing a state in which a surface protective tape is bonded to a semiconductor wafer.
3 is a cross-sectional view for explaining a step of bonding a semiconductor wafer and a ring frame to a wafer processing tape.
4 is a cross-sectional view for explaining a step of peeling a surface protection tape from the surface of a semiconductor wafer.
5 is a cross-sectional view showing a state in which a modified region is formed on a semiconductor wafer by laser processing.
Fig. 6A is a sectional view showing a state in which a tape for wafer processing is mounted on an expander.
6B is a cross-sectional view showing the wafer processing tape, the adhesive layer, and the semiconductor wafer after expansion.
7 is a cross-sectional view for explaining a heat shrink process.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail based on drawing.

1 is a cross-sectional view showing a state in which a semiconductor wafer W is bonded to a tape 10 for wafer processing according to an embodiment of the present invention. The surface protection tape 14 for protecting a circuit pattern is bonded to the circuit pattern formation surface (wafer surface) of the semiconductor wafer W in the backgrinding process which grinds the wafer back surface. Moreover, the tape 10 for a wafer process is bonded to the back surface of the semiconductor wafer W. As shown in FIG. The tape 10 for wafer processing of this invention is an expandable tape used when dividing the adhesive bond layer 13 along a chip | tip by an expand. The wafer processing tape 10 has a pressure-sensitive adhesive layer 12 and a pressure-sensitive adhesive layer 12 formed on the base film 11 and the base film 11 and the adhesive layer 13 formed on the adhesive layer 13. The back surface of the semiconductor wafer W is bonded to the substrate. In addition, each layer may be cut | disconnected (precut) to a predetermined shape previously according to a use process and an apparatus. In addition, the tape for a wafer process of this invention includes the form cut | disconnected for every wafer, and the form which wound the long sheet in which it was formed in multiple numbers in roll shape. Below, the structure of each layer is demonstrated.

<Base film>

The base film 11 is comprised from the thermoplastic crosslinked resin whose heat conductivity prescribed | regulated by JIS A1412 is 0.15 W / m * K or more. By using the base film 11 of such a structure, the tape 10 for wafer processing which has the uniformity and isotropic expandability which can be used in the expand process which divides the adhesive bond layer 13 can be implement | achieved. In addition, crosslinked resins have a greater resilience to tensile strength than non-crosslinked resins, so that the shrinkage reaction occurs when the resin is softened by applying heat to an elongated state after the expansion process. It can remove by heat shrink, and the tape can be tensioned and the space | interval of each semiconductor chip can be kept stable. If the thermal conductivity is too low, an excessive amount of heat is required during the heat shrinkage, and the adhesive layer 13 and the pressure-sensitive adhesive layer 12 are in close contact with each other due to the heat, which is not preferable. In addition, it becomes difficult to sufficiently remove the loosening generated in the expand process. Moreover, there exists a possibility of causing pick-up defect by loosening after a heat shrink process. Therefore, the lower limit of thermal conductivity is appropriately about 0.15 W / m · K.

The thermoplastic crosslinked resin may be any one as long as the thermal conductivity specified in JIS A1412 is 0.15 W / m · K or higher, but ethylene- (meth) acrylic acid binary copolymer or ethylene- (meth) acrylic acid- (meth) acrylic acid The ionomer resin crosslinked with metal ions is suitable for the expansion process in terms of uniform expandability, and at the same time, the restoring force acts strongly upon heating by crosslinking, so that the process of removing the tape from the expansion process is removed. Also particularly preferable. In addition, since the ionomer resin does not contain chlorine in the structure of the molecular chain, even if the tape unnecessary after use is incinerated, the ionomer resin does not generate chlorinated aromatic hydrocarbons such as dioxins and the like, and thus the environmental load is small. Any of the metal ions included in the ionomer resin may be used. However, zinc ions are particularly preferable because of their low elution. As an adjustment method for increasing thermal conductivity, for example, it is preferable to increase the ethylene domain ratio in order to increase crystallinity, or increase the amount of metal ions added to increase the crosslinking point.

As said thermoplastic crosslinking resin, what crosslinked other than the ionomer resin by irradiating an electron beam to the low density polyethylene of specific gravity 0.910 or more and less than 0.930 or the ultra low density polyethylene of specific gravity 0.910 or less is suitable. Since this crosslinked site | part and non-crosslinked site | part coexist in resin, this thermoplastic crosslinked resin is suitable for the said expansion process because it has a uniform uniform expandability, and since the restoring force acts strongly at the time of heating, it generate | occur | produced in the expansion process. It is especially suitable also in the process of removing loosening of a tape. By suitably adjusting the quantity of the electron beam irradiated with respect to the low density polyethylene or the ultra low density polyethylene, resin with a thermal conductivity of 0.15 W / m * K or more and sufficient uniform expandability can be obtained. In addition, since the electron beam cross-linked polyethylene does not contain chlorine in the structure of the molecular chain, even if the tape which is unnecessary after use is incinerated, it does not generate chlorinated aromatic hydrocarbons such as dioxins and its analogs, and thus there is little environmental load.

As said thermoplastic crosslinking resin, what was made to crosslink by irradiating an electron beam to the ethylene-vinyl acetate copolymer other than the said ionomer resin and the electron beam crosslinked polyethylene is suitable. This thermoplastic crosslinked resin is particularly suitable for the step of removing the loosening of the tape generated in the expand process in that the restoring force acts strongly upon heating. Since the electron beam-crosslinked ethylene-vinyl acetate copolymer also does not contain chlorine in the structure of the molecular chain, incineration of the tape, which is unnecessary after use, does not generate chlorinated aromatic hydrocarbons such as dioxins and the like. The environmental load is also small.

In addition, in the example shown in FIG. 1, although the base film 11 is a single | mono layer, it is not limited to this, The two or more multilayered structure which laminated | stacked 2 or more types of thermoplastic crosslinking resins of 0.15 W / m * K or more may be sufficient. Although the thickness of the base film 11 is not specifically defined, 50-200 micrometers is preferable as thickness which has sufficient intensity | strength which is easy to extend | stretch and does not fracture in the expansion process of the tape 10 for a wafer process. , 100 µm to 150 µm is more preferable.

As a manufacturing method of the base film 11 of multiple layers, a conventionally well-known extrusion method, the lamination method, etc. can be used. When using the lamination method, you may interpose an adhesive agent between layers. As the adhesive, a conventionally known adhesive can be used.

<Pressure-sensitive adhesive layer>

The adhesive layer 12 can be formed by coating the adhesive on the base film 11. There is no restriction | limiting in particular in the adhesive layer 12 which comprises the tape 10 for a wafer process of this invention, and the grade which does not produce the defects, such as a chip | tip, etc. without generating peeling with the adhesive bond layer 13 at the time of dicing. What is necessary is just a thing which has the property of holding | maintenance of the adhesiveness, and peeling with the adhesive bond layer 13 at the time of pick-up. In order to improve the pick-up property after dicing, it is preferable that the adhesive layer 12 is energy ray curable, and it is preferable that it is a material which is easy to peel with the adhesive bond layer 13 after hardening.

For example, in this invention, the compound (A) which has an energy-beam curable carbon-carbon double bond whose iodine number is 0.5-20 in a molecule | numerator is at least chosen from polyisocyanate, melamine formaldehyde resin, and an epoxy resin. It is preferable to contain the polymer formed by addition-reacting 1 type of compound (B). Here, energy rays are ionizing radiations, such as a light ray like an ultraviolet-ray, or an electron beam.

The compound (A) which is one of the main components of the adhesive layer 12 is demonstrated. The amount of the energy ray-curable carbon-carbon double bond introduced into the compound (A) is preferably 0.5 to 20, more preferably 0.8 to 10, in terms of iodine value. When the iodine value is 0.5 or more, the effect of reducing the adhesive force after energy ray irradiation can be obtained. When the iodine value is 20 or less, the fluidity of the pressure-sensitive adhesive after energy ray irradiation is sufficient, so that the chip after the expansion of the tape 10 for wafer processing is performed. Since the gap can be sufficiently obtained, the problem that the image recognition of each chip becomes difficult at the time of pickup can be suppressed. Moreover, compound (A) itself has stability, and manufacture becomes easy.

It is preferable that it is -70 degreeC-0 degreeC, and, as for the said compound (A), it is more preferable that it is -66 degreeC--28 degreeC. If the glass transition point is -70 ° C or higher, heat resistance to heat associated with energy ray irradiation is sufficient, and if it is 0 ° C or lower, the scattering prevention effect of the semiconductor chip after dicing on a wafer having a rough surface state is sufficiently obtained. The compound (A) may be produced in any way, but for example, a mixture of an acrylic copolymer and a compound having an energy ray-curable carbon-carbon double bond, an acrylic copolymer having a functional group, or a methacryl type having a functional group The thing obtained by making copolymer (A1), the functional group which can react with the functional group, and the compound (A2) which has an energy radiation curable carbon-carbon double bond react is used.

Among these, the compound (A1) having the above functional group includes a monomer (A1-1) having an energy ray-curable carbon-carbon double bond such as alkyl acrylate or alkyl methacrylate, and an energy ray-curable carbon-carbon double bond. It can obtain by copolymerizing the monomer (A1-2) which has a functional group. Examples of the monomer (A1-1) include hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, or alkyl having 6 to 12 carbon atoms in the alkyl chain. Pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, or methacrylate similar to these which are monomers whose chain carbon number is 5 or less can be mentioned.

As a monomer (A1-1), the glass transition point becomes low, so that a monomer with a large carbon number is used, and the thing of a desired glass transition point can be produced. In addition, in addition to the glass transition point, in order to improve compatibility and various performances, a low molecular weight compound having a carbon-carbon double bond such as vinyl acetate, styrene, acrylonitrile, or the like may also be blended to obtain 5 masses of the total mass of the monomer (A1-1). It is possible within the range of% or less.

As a functional group which a monomer (A1-2) has, a carboxyl group, a hydroxyl group, an amino group, a cyclic anhydride group, an epoxy group, an isocyanate group, etc. are mentioned, As a specific example of monomer (A1-2), acrylic acid, methacrylic acid, cinnamic acid, ita Cholic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, N-methylol acrylamide, N-methylol meta Krillamide, aryl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride, glycy Some of the isocyanate groups of the dilacrylate, glycidyl methacrylate, allyl glycidyl ether, and the polyisocyanate compound are hydroxyl or carboxyl groups and energy ray curable The urethane-ized etc. can be mentioned with the monomer which has a carbon-carbon double bond.

In the compound (A2), examples of the functional group used include a hydroxyl group, an epoxy group, an isocyanate group, and the like, when the functional group possessed by the compound (A1), that is, the monomer (A1-2), is a carboxyl group or a cyclic anhydride group. In the case of a hydroxyl group, a cyclic acid anhydride group, an isocyanate group, etc. are mentioned, In the case of an amino group, an epoxy group, an isocyanate group, etc. are mentioned, In the case of an epoxy group, a carboxyl group, a cyclic acid anhydride group, an amino group, etc. are mentioned, As a specific example, the thing similar to what was listed by the specific example of monomer (A1-2) can be mentioned.

In the reaction between the compound (A1) and the compound (A2), by leaving an unreacted functional group, one defined in the present invention can be produced in terms of properties such as an acid value or a hydroxyl value. In the synthesis of the above-mentioned compound (A), as the organic solvent in the case of carrying out the reaction by solution polymerization, a ketone-based, ester-based, alcohol-based, or aromatic-based one can be used. Among them, toluene, ethyl acetate, isopropyl alcohol, The solvent which is generally a good solvent of an acryl-type polymer, such as benzenemethyl cellosolve, ethyl cellosolve, acetone, and methyl ethyl ketone, and has a boiling point of 60-120 degreeC is preferable, As a polymerization initiator, it is (alpha), (alpha) '-azobisiso Radical generators, such as azobis type | system | groups, such as butyl nitrile, and organic peroxides, such as benzoyl peroxide, are normally used. Under the present circumstances, a catalyst and a polymerization inhibitor can be used together and compound (A) of desired molecular weight can be obtained by adjusting superposition | polymerization temperature and superposition | polymerization time. In addition, it is preferable to use a mercaptan and a carbon tetrachloride solvent about adjusting molecular weight. In addition, this reaction is not limited to solution polymerization, It does not interfere with other methods, such as block polymerization and suspension polymerization.

Although compound (A) can be obtained as mentioned above, in the present invention, the molecular weight of compound (A) is preferably about 300,000 to 1 million. If it is less than 300,000, the cohesion force becomes small, and when the wafer is diced, chip shift is likely to occur and image recognition may be difficult. In order to prevent this chip | tip shift to the maximum, it is preferable that molecular weight is 400,000 or more. Moreover, when molecular weight exceeds 1 million, there exists a possibility to gelatinize at the time of a synthesis | combination and a coating work. In addition, the molecular weight in this invention is the mass mean molecular weight of polystyrene conversion.

When compound (A) has OH group whose hydroxyl value becomes 5-100, since the adhesive force after energy-beam irradiation can be reduced, the risk of a pick-up miss can be further reduced. Moreover, it is preferable that compound (A) has a COOH group whose acid value becomes 0.5-30. Here, when the hydroxyl value of compound (A) is too low, the effect of reducing the adhesive force after energy-beam irradiation is not enough, and when too high, it exists in the tendency to impair the fluidity | liquidity of the adhesive after energy-beam irradiation. Moreover, when the acid value is too low, the effect of improving tape recoverability is not sufficient, and when too high, the fluidity of the pressure-sensitive adhesive tends to be impaired.

Next, the compound (B) which is another main component of an adhesive layer is demonstrated. A compound (B) is a compound chosen from polyisocyanate, melamine formaldehyde resin, and an epoxy resin, and can be used individually or in combination of 2 or more types. This compound (B) acts as a crosslinking agent, and by the crosslinking structure resulting from reaction with the compound (A) or the base film, the cohesive force of the pressure sensitive adhesive containing the compounds (A) and (B) as a main component can be improved after applying the pressure sensitive adhesive. have.

There is no restriction | limiting in particular as polyisocyanate, For example, 4,4'- diphenylmethane diisocyanate, tolylene diisocyanate, xylene diisocyanate, 4,4'- diphenyl ether diisocyanate, 4,4'- [2, Aromatic isocyanate, such as 2-bis (4-phenoxyphenyl) propane] diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl- hexamethylene diisocyanate, isophorone diisocyanate, 4,4'- dicyclohexyl Methane diisocyanate, 2,4'- dicyclohexyl methane diisocyanate, lysine diisocyanate, lysine triisocyanate, etc. are mentioned, Specifically, a colonate (L) (brand name by the Nippon Polyurethanes company) is used, etc. Can be. As melamine formaldehyde resin, Nikaraku MX-45 (brand name by Sanwa Chemical Co., Ltd.), melan (brand name by Hitachi Kasei Kogyo Co., Ltd.) etc. can be used specifically ,. As an epoxy resin, TETRAD-X (Mitsubishi Chemical Co., Ltd. brand name) etc. can be used. In this invention, it is especially preferable to use polyisocyanate.

As addition amount of (B), it is necessary to select so that it may become 0.1-10 mass parts with respect to 100 mass parts of compounds (A), Preferably it is 0.4-3 mass parts. By selecting in this range, since it can be set as appropriate cohesion force and a crosslinking reaction does not advance rapidly, workability | operativity, such as compounding and application | coating of an adhesive, becomes favorable.

In addition, in this invention, it is preferable that the adhesive layer 12 contains the photoinitiator (C). There is no restriction | limiting in particular in the photoinitiator (C) contained in the adhesive layer 12, What is conventionally known can be used. For example, benzophenones such as benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, acetophenone, diethoxyacetophenone and the like Anthraquinones such as acetophenones, 2-ethyl anthraquinone and t-butyl anthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triaryl An imidazole dimer (roffin dimer), an acridine type compound, etc. are mentioned, These can be used individually or in combination of 2 or more types. As addition amount of (C), it is preferable to set it as 0.1-10 mass parts with respect to 100 mass parts of compounds (A), and it is more preferable to set it as 0.5-5 mass parts.

Moreover, a tackifier, an adhesion regulator, surfactant, etc., or other modifiers etc. can be mix | blended with the energy ray curable adhesive used for this invention as needed. Moreover, you may add an inorganic compound filler suitably.

The thickness of the adhesive layer 12 is at least 5 micrometers, More preferably, it is 10 micrometers or more. The pressure-sensitive adhesive layer 12 may be a structure in which a plurality of layers are laminated.

<Adhesive Layer>

After the semiconductor wafer is bonded and diced, the adhesive layer 13 is peeled off from the pressure-sensitive adhesive layer 12 when picking up the chip and adheres to the chip, and is used as an adhesive for fixing the chip to a substrate or lead frame. will be. Although the adhesive bond layer 13 is not specifically limited, What is necessary is just an adhesive of the film form generally used for a dicing die-bonding tape, and the acrylic adhesive agent, the brand adhesive of epoxy resin / phenol resin / acrylic resin, etc. are preferable. Do. Although the thickness may be set suitably, about 5-100 micrometers is preferable.

In the tape 10 for wafer processing of the present invention, the adhesive layer 13 is formed by directly or indirectly laminating the adhesive layer 13 into a film (hereinafter referred to as an adhesive film) on the base film 11. You may form. It is preferable to apply the linear pressure of 0.01-10 N / m in the temperature at the time of lamination in the range of 10-100 degreeC. In addition, the adhesive layer 13 may be formed on the separator, and the separator may be peeled off after lamination, or may be used as it is as a cover film of the tape 10 for wafer processing, and may be peeled off when bonding a semiconductor wafer. .

Although the adhesive film may be laminated | stacked on the whole surface of the adhesive layer 12, you may laminate | stack the adhesive film cut | disconnected (precut) in the shape according to the semiconductor wafer to be bonded previously. In the case where the adhesive film according to the semiconductor wafer is laminated, as shown in FIG. 1, the adhesive layer 13 is attached to the portion where the semiconductor wafer W is bonded, and the adhesive layer 13 is attached to the portion where the ring frame 20 is bonded. ), Only the adhesive layer 12 is present. In general, since the adhesive layer 13 is difficult to peel off from the adherend, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12 by using a precut adhesive film, and at the time of peeling the tape after use. The ring frame 20 has an effect that it is difficult to generate residual adhesiveness.

<Applications>

The use of the tape 10 for wafer processing of the present invention is not particularly limited as long as it is used in the method of manufacturing a semiconductor device including the step of dividing the adhesive layer 13 at least by expansion. For example, it can use suitably in the manufacturing methods (A)-(D) of the following semiconductor devices.

Manufacturing method (A) of a semiconductor device

(a) bonding the surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the semiconductor wafer,

(c) bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor wafer while heating the semiconductor wafer at 70 to 80 ° C;

(d) peeling a surface protection tape from the semiconductor wafer surface;

(e) irradiating a laser beam to a portion to be divided of the semiconductor wafer to form a modified region by multiphoton absorption in the wafer;

(f) expanding the wafer processing tape to divide the semiconductor wafer and the adhesive layer along a dividing line to obtain a plurality of semiconductor chips with the adhesive layer;

(g) heat shrinking a portion of the wafer processing tape that does not overlap with the semiconductor chip to remove the loosening generated in the expand process to maintain the gap of the semiconductor chip;

(h) The manufacturing method of a semiconductor device including the process of picking up the said semiconductor chip with an adhesive bond layer from the adhesive layer of the tape for a wafer process.

Manufacturing Method (B) of Semiconductor Device

(a) bonding the surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the semiconductor wafer,

(c) bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor wafer while heating the semiconductor wafer at 70 to 80 ° C;

(d) peeling a surface protection tape from the semiconductor wafer surface;

(e) irradiating a laser beam along a dividing line from the surface of said semiconductor wafer and dividing it into individual semiconductor chips;

(f) expanding the wafer processing tape to divide the adhesive layer for each of the semiconductor chips to obtain a plurality of semiconductor chips with the adhesive layer;

(g) heat shrinking a portion of the wafer processing tape that does not overlap with the semiconductor chip to remove the loosening generated in the expand process to maintain the gap of the semiconductor chip;

(h) The manufacturing method of a semiconductor device including the process of picking up the said semiconductor chip with an adhesive bond layer from the adhesive layer of the tape for a wafer process.

Manufacturing method of semiconductor device (C)

(a) bonding the surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the semiconductor wafer,

(c) bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor wafer while the semiconductor wafer is heated at 70 to 80 ° C;

(d) peeling a surface protection tape from the semiconductor wafer surface;

(e) cutting the semiconductor wafer along a dividing line using a dicing blade to divide the semiconductor wafer into individual semiconductor chips;

(f) expanding the wafer processing tape to divide the adhesive layer for each of the semiconductor chips to obtain a plurality of semiconductor chips with the adhesive layer;

(g) heat shrinking a portion of the wafer processing tape that does not overlap with the semiconductor chip to remove the loosening generated in the expand process to maintain the gap of the semiconductor chip;

(h) The manufacturing method of a semiconductor device including the process of picking up the said semiconductor chip with an adhesive bond layer from the adhesive layer of the tape for a wafer process.

Manufacturing method (D) of semiconductor device

(a) cutting the semiconductor wafer on which the circuit pattern is formed using a dicing blade along a dividing line predetermined line to a depth less than the thickness of the wafer;

(b) bonding a surface protection tape to the surface of the semiconductor wafer;

(c) a backgrinding step of grinding the back surface of the semiconductor wafer and dividing it into individual semiconductor chips;

(d) bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor chip while heating the semiconductor wafer at 70 to 80 ° C;

(e) peeling a surface protection tape from the semiconductor wafer surface;

(f) expanding the wafer processing tape to divide the adhesive layer for each of the semiconductor chips to obtain a plurality of semiconductor chips with the adhesive layer;

(g) heat shrinking a portion of the wafer processing tape that does not overlap with the semiconductor chip to remove the loosening generated in the expand process to maintain the gap of the semiconductor chip;

(h) The manufacturing method of a semiconductor device including the process of picking up the said semiconductor chip with an adhesive bond layer from the adhesive layer of the tape for a wafer process.

 <How to use>

The use method of the tape at the time of applying the tape 10 for a wafer process of this invention to the manufacturing method (A) of the said semiconductor device is demonstrated, referring FIGS. First, as shown in FIG. 2, the surface protection tape 14 which consists of an ultraviolet curable component is bonded to the surface of the semiconductor wafer W in which the circuit pattern was formed, and the back grinding which grinds the back surface of the semiconductor wafer W is carried out. Carry out the process.

After completion of the backgrinding process, as shown in FIG. 3, the semiconductor wafer W is placed on the heater table 25 of the wafer mounter with the surface side of the semiconductor wafer W down, and then the semiconductor wafer ( The tape 10 for wafer processing is bonded to the back surface of W). The tape 10 for wafer processing used here laminate | stacks the adhesive film cut | disconnected previously (precut) to the shape according to the semiconductor wafer W to bond, and is adhesive in the surface which bonds with the semiconductor wafer W, An area where the pressure-sensitive adhesive layer 12 is exposed is provided around the area where the layer 13 is exposed. The portion where the adhesive layer 13 of the tape 10 for wafer processing is exposed and the back surface of the semiconductor wafer W are bonded together, and the portion where the adhesive layer 12 around the adhesive layer 13 is exposed and the ring frame. Join (20). At this time, the heater table 25 is set to 70-80 degreeC, and heat bonding is performed by this.

Next, the semiconductor wafer W to which the wafer processing tape 10 is bonded is taken out from the heater table 25, and as shown in FIG. 4, a wafer adsorption table is placed with the wafer processing tape 10 side down. It loads on (26). And the ultraviolet-ray of 1000 mJ / cm <2> is irradiated to the base material surface side of the surface protection tape 14, for example using the ultraviolet light source 27 from the upper side of the semiconductor wafer W adsorbed and fixed to the adsorption table 26, The adhesive force of the surface protection tape 14 to the semiconductor wafer W is reduced, and the surface protection tape 14 is peeled off from the surface of the semiconductor wafer W. As shown in FIG.

Next, as shown in FIG. 5, laser beam is irradiated to the division scheduled part of the semiconductor wafer W, and the modified region 30 by multiphoton absorption is formed in the inside of the semiconductor wafer W. Next, as shown in FIG.

Next, as shown to Fig.6 (a), the tape 10 for a wafer process to which the semiconductor wafer W and the ring frame 20 were bonded was expanded with the base film 11 side down. Load on the stage 21 of the device. In the figure, reference numeral 22 denotes a hollow cylindrical push-up member of the expander.

Next, as shown in FIG. 6B, in a state where the ring frame 20 is fixed, the pushing-up member 22 of the expander is raised to expand the tape 10 for wafer processing. As expansion conditions, an expansion speed is 10-500 mm / sec, for example, and an expansion amount (push amount) is 5-25 mm, for example. Thus, the tape 10 for wafer processing is extended in the radial direction of the semiconductor wafer W, and the semiconductor wafer W is divided | segmented by the chip unit starting from the modified area | region 30 as a starting point. At this time, in the part adhering to the back surface of the semiconductor wafer W, elongation (deformation) due to expansion is suppressed and no break occurs, but at the position between the chips C, the tape is expanded. The tension due to breaks down concentrated. Therefore, the adhesive layer 13 is also divided together with the semiconductor wafer W. As shown in FIG. Thereby, the some semiconductor chip C with the adhesive bond layer 13 can be obtained.

Next, as shown in FIG. 7, the pushing-up member 22 is returned to the original position, the loosening of the tape 10 for a wafer process which arose in the previous expansion process is removed, and the semiconductor chip C is removed. The process of keeping a space stable is performed. In this step, for example, the hot air nozzle 29 is used for the annular region 28 between the ring frame 20 and the region where the semiconductor chip C is present in the tape 10 for wafer processing. The hot air of 90-120 degreeC is blown out, the base film 11 is heat-shrunk, and the tape 10 for a wafer process is tensioned. Thereafter, the pressure-sensitive adhesive layer 12 is subjected to an energy ray curing treatment, a thermosetting treatment, or the like, and the adhesive force to the adhesive layer 13 of the pressure-sensitive adhesive layer 12 is weakened, and then the semiconductor chip C is picked up.

In the method of manufacturing a semiconductor device as described above, since the base film 11 made of a thermoplastic crosslinked resin has a large restoring force with respect to tension applied at the time of expansion and a low uncured softening point, it shrinks easily by heating. . Therefore, the loosening generated in the tape 10 for wafer processing after the expansion step of dividing the adhesive layer 13 can be preferably applied to the step of removing the tape by tensioning the tape.

(Example)

Next, although the Example and comparative example which were performed in order to clarify the effect of this invention are demonstrated in detail, this invention is not limited to these Examples.

The base film 11 shown in Table 1 and Table 2 is used for the tape 10 for a wafer process of Examples 1-6 and Comparative Examples 1-8, respectively. The manufacturing method of the adhesive composition which comprises the adhesive layer 12 which is another structure, the adhesive composition which comprises the adhesive bond layer 13, and the tape 10 for a wafer process is the same. In the following description, MFR (Melt flow rate) was measured by JIS (K7210), tensile strength by JIS-K7162, density by JIS-K7112, and melting point by DSC (differential scanning calorimetry).

(1) Production of a sample

(1.1) Example 1

(Production of base film 11)

Zinc ionomer a (density 0.96 g / cm 3, zinc ion content 4 mass%, chlorine content 1) of ethylene methacrylate-ethyl methacrylate (mass ratio 8: 1: 1) terpolymer synthesized by radical polymerization method Support substrate (1) which forms the base film 11 by melt | dissolving resin beads of less than mass%, the beaker softening point 56 degreeC, melting | fusing point 86 degreeC at 140 degreeC, and shape | molding to 100-micrometer-thick long film shape using an extruder. )

(Preparation of Adhesive Composition (1))

The radical copolymerization of butyl acrylate, 2-hydroxyethyl acrylate and acrylic acid yielded an acrylic copolymer (molecular weight of 600,000, hydroxyl value of 4.7 mgKOH / g, acid value of 0.2 mgKOH / g). To 100 mass parts of this acryl-type copolymer, 30 mass parts of trimethylol propane triacrylates are added as a photopolymerizable hardened | cured material, 2 mass parts of colonate (L) (made by Japan Polyurethane) is added as a polyisocyanate, and a photoinitiator As a mixture, 1 mass parts of Igacure-184 (made by Nippon Chiba Co., Ltd.) was added, dissolved in ethyl acetate, and the pressure-sensitive adhesive composition (1) was prepared.

(Preparation of Adhesive Composition (1))

50 mass parts of cresol novolak-type epoxy resins (epoxy equivalent 197, molecular weight 1200, softening point 70 degreeC) as an epoxy resin, 1.5 mass parts of (gamma)-mercaptopropyl trimethoxysilane as a silane coupling agent, (gamma) -uradepropyl triethoxy Cyclohexanone was added to the composition which consists of 3 mass parts of silanes, and 30 mass parts of silica fillers with an average particle diameter of 16 nm, and it stirred and knead | mixed, and knead | mixed for 90 minutes using the bead mill. 100 mass parts of acrylic resin (molecular weight 200,000, hydroxyl value 3.5 mgKOH / g) synthesize | combined by radically polymerizing butyl acrylate and 2-hydroxyethyl acrylate to this, and 1 mass part of collonate (L) as a hardening | curing agent It added and stirred and mixed to prepare the adhesive composition (1).

(Production of the tape 10 for a wafer processing)

Applying the adhesive composition 1 on the support base material 1 which comprises the base film 11 so that the thickness after drying may be set to 20 micrometers, it is made to dry at 110 degreeC for 3 minutes, and the adhesive layer ( 12) was formed. Apart from this, it is applied to a release liner made of a polyethylene terephthalate film obtained by releasing the adhesive composition 1 so that the thickness after drying is 20 μm, and dried at 110 ° C. for 3 minutes to form an adhesive layer on the release liner. The adhesive film with which (13) was formed was produced.

Next, the adhesive sheet was cut out to the shape shown in FIG. 3 etc. which were able to be bonded to the ring frame 20, covering the opening part. Moreover, the adhesive film was cut out to the shape shown in FIG. 3 etc. which could cover the back surface of the semiconductor wafer W. As shown in FIG. And the adhesive layer 12 side of the said adhesive sheet and the adhesive bond layer 13 side of the said adhesive film are bonded so that the part which the adhesive layer 12 is exposed may be formed around the adhesive film as shown in FIG. The tape 10 for a wafer process was produced. In this way, the supporting substrate constituting the base film 11, the energy ray-curable pressure-sensitive adhesive layer 12, and the adhesive layer 13 were fabricated in this order, and the tape 10 for wafer processing was produced. did.

(1.2) Example 2

(Preparation of the base film 11)

Sodium ionomer a (density 0.95 g / cm 3, sodium ion content 3 mass%, chlorine content) of ethylene-methacrylic acid-ethyl methacrylate (mass ratio 8: 1: 1) terpolymer synthesized by the radical polymerization method Support base material 2 which forms the base film 11 by melt | dissolving resin beads of less than 1 mass%, the beaker softening point 64 degreeC, and melting point 86 degreeC at 140 degreeC, and shape | molding to elongate film shape of thickness 100micrometer using an extruder. )

Using the support base material 2 which comprises this base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and this is an Example. It was made into a sample of two.

(1.3) Example 3

(Preparation of the base film 11)

Zinc ionomer b (density 0.95 g / cm 3, zinc ion content 2% by mass, chlorine content less than 1% by mass) of ethylene-methacrylic acid (mass ratio 9.5: 0.5) binary copolymer synthesized by radical polymerization method The support substrate 3 which comprises the base film 11 was produced by melting resin beads of softening point 81 degreeC and melting | fusing point 100 degreeC) at 140 degreeC, and shape | molding in elongate film shape of thickness 100micrometer using an extruder.

Using the support base material 3 which comprises this base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and this is an Example. Made with 3 samples.

(1.4) Example 4

(Preparation of the base film 11)

The resin beads of ultra low density polyethylene ULDPE a (density 0.90 g / cm 3, chlorine content less than 1 mass%, beaker softening point 72 ° C., melting point 90 ° C.) synthesized by the metallocene polymerization method were melted at 140 ° C., and the extruder After using it, it shape | molded into the long film shape of thickness 100micrometer, and the support base material 4 which comprises the base film 11 was produced by irradiating an electron beam with acceleration voltage 1MeV and irradiation amount 20Mrad using the heavy energy electron beam acceleration apparatus.

Using the support base material 4 which comprises this base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and this is an Example. 4 samples.

(1.5) Example 5

(Preparation of the base film 11)

Low-density polyethylene LDPE a (density 0.91 g / cm 3, chlorine content less than 1 mass%, beaker softening point 81 ° C., melting point 102 ° C.) synthesized by the metallocene polymerization method was melted at 140 ° C., and an extruder was used. After molding to a long film shape having a thickness of 100 μm, the supporting substrate 5 constituting the base film 11 was produced by irradiating an electron beam with an acceleration voltage of 1MeV and an irradiation amount of 20 Mrad using a heavy energy electron beam accelerator.

Using the support base material 5 which comprises this base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and this is an Example. I made a sample of five.

(1.6) Example 6

(Preparation of the base film 11)

The resin beads of the ethylene-vinyl acetate (mass ratio 9: 1) copolymer EVA a (density 0.93 g / cm <3>, chlorine content less than 1 mass%, beaker softening point 69 degreeC, melting | fusing point 96 degreeC) synthesize | combined by the radical polymerization method were 140 After melt | dissolving at ° C and shape | molding to the long film shape of thickness 100micrometer using an extruder, the support base material which forms the base film 11 by irradiating an electron beam with acceleration voltage of 1MeV and irradiation amount 20Mrad using a heavy energy electron beam acceleration apparatus. (6) produced.

Using the support base material 6 which comprises this base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and this is an Example. I made a sample of 6.

(1.7) Comparative Example 1

(Preparation of the base film 11)

Sodium ionomer b (density 0.94 g / cm 3, sodium ion content 3% by mass, chlorine content less than 1% by mass) of ethylene-methacrylic acid (mass ratio 8: 2) binary copolymer synthesized by radical polymerization method The support substrate 7 which comprises the base film 11 was produced by melting resin beads of a softening point of 60 degreeC and melting | fusing point of 89 degreeC) at 140 degreeC, and shape | molding in elongate film shape of thickness 100micrometer using an extruder.

Using the support base material 7 which comprises this base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and this is a comparative example. It was called sample of 1.

(1.8) Comparative Example 2

(Preparation of the base film 11)

Ethylene-vinyl acetate (mass ratio 8: 2) copolymer EVAb (density 0.94 g / cm <3>, chlorine content less than 1 mass%, the bead softening point 40 degreeC, melting | fusing point 80 degreeC) synthesize | combined by the radical polymerization method was 140 After melt | dissolving at ° C and shape | molding to the long film shape of thickness 100micrometer using an extruder, the support base material which forms the base film 11 by irradiating an electron beam with acceleration voltage of 1MeV and irradiation amount 20Mrad using a heavy energy electron beam acceleration apparatus. (8) produced.

Using the support base material 8 which comprises this base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and this is a comparative example. It was made into a sample of two.

(1.9) Comparative Example 3

(Preparation of the base film 11)

Ethylene-vinyl acetate (mass ratio 9: 1) copolymer EVA a (density 0.93 g / cm <3>, chlorine content less than 1 mass%, the bead softening point 69 degreeC, melting | fusing point 96 degreeC resin beads synthesize | combined by the radical polymerization method are 140 degreeC It melt | dissolved in the furnace, and shape | molded to the elongate film shape of thickness 100micrometer using the extruder, and the support base material 9 which comprises the base film 11 was produced.

Using the support base material 9 which comprises this base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and this is a comparative example. I made a sample of 3.

(1.10) Comparative Example 4

(Preparation of the base film 11)

Commercially available resin polyvinyl chloride a (30 mass% of plasticizer, density 1.45 g / cm 3, chlorine content less than 60 mass%, beaker softening point 76 ° C., melting point 100 ° C.) was melted at 140 ° C., using an extruder, The support base material 10 which comprises the base film 11 was produced by shape | molding in elongate film shape of thickness 100micrometer.

Using the support base material 10 which comprises this base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and this is a comparative example. 4 samples.

(1.11) Comparative Example 5

(Preparation of the base film 11)

The resin beads of ultra low density polyethylene ULDPE a (density 0.90 g / cm 3, chlorine content less than 1% by mass, beaker softening point 72 ° C, melting point 90 ° C) synthesized by the metallocene polymerization method were melted at 140 ° C, and the extruder The support base material 11 which comprises the base film 11 was produced by shape | molding to long film shape of thickness 100micrometer using.

Using the support base material 11 which comprises this base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and this is a comparative example. I made a sample of five.

(1.12) Comparative Example 6

(Preparation of the base film 11)

Low-density polyethylene LDPE a (density 0.91 g / cm 3, chlorine content less than 1 mass%, beaker softening point 81 ° C., melting point 102 ° C.) synthesized by the metallocene polymerization method was melted at 140 ° C., and an extruder was used. Then, the support base material 12 which comprises the base film 11 was produced by shape | molding in elongate film shape of thickness 100micrometer.

Using the support base material 12 which comprises this base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and this is a comparative example. I made a sample of 6.

(1.13) Comparative Example 7

(Preparation of the base film 11)

The resin beads of Nova Technical PP FW4B (polypropylene) (density: 0.90 g / cm 3, beaker softening point 96 ° C, melting point: 140 ° C) manufactured by Nippon Polycam were melted at 180 ° C, and the extruder was used to give a 100 μm long By shape | molding in a film form, the support base material 13 which comprises the base film 11 was produced (it abbreviated as "PP" in Table 2).

Using the support base material 13 which comprises this base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and this is a comparative example. I made a sample of 7.

(1.14) Comparative Example 8

(Preparation of the base film 11)

Dynaron 1320P (hydrogenated styrene-butadiene copolymer, hydrogenation rate 90 mass% or more, styrene content: 10 mass%, specific gravity 0.89, MFR: 3.5 g / 10min, tensile strength: 4.1 MPa, tensile elongation: 1300%, made by JSR Corporation) The support substrate 14 which comprises the base film 11 was produced by melt | dissolving resin beads of glass transition temperature: -50 degreeC at 140 degreeC, and shape | molding in elongate film shape of thickness 100micrometer using an extruder (table 2 abbreviated as `` elastomer '').

Using the support base material 14 which comprises this base film 11, the adhesive composition 1, and the adhesive composition 1, the tape 10 for a wafer process was produced by the method similar to Example 1, and this is a comparative example. I made a sample of eight.

(2) evaluation of samples

(2.1) thermal conductivity

About each base film 11 used by Examples 1-6 and Comparative Examples 1-8, the thermal conductivity was measured on condition of the following based on JISA1412. The result was shown in the column of "thermal conductivity" of Table 3.

Measurement Method: Measurement of Thermal Resistance and Thermal Conductivity of Thermal Insulators-Part 1: Protective Hot Plate Method (GHP Method)

Measuring environment: temperature 25 ℃, humidity 50%

(2.2) appearance

According to the method described below, each of the tapes for wafer processing of the above-mentioned Examples and Comparative Examples was subjected to a conformance test in the following semiconductor processing step corresponding to the manufacturing method (A) of the semiconductor device described above.

(a) Process of bonding a surface protection tape to the semiconductor wafer surface in which the circuit pattern was formed.

(b) Background process of grinding the said semiconductor wafer back surface.

(c) While the semiconductor wafer is heated at 70 ° C., the adhesive layer of the tape for wafer processing is bonded to the back surface of the semiconductor wafer, and at the same time, the ring frame for wafer processing does not overlap the adhesive layer of the tape for wafer processing. Bonding to exposed parts without

(d) Peeling a surface protection tape from the surface of the said semiconductor wafer.

(e) Process of irradiating a laser beam to the division scheduled part of the said semiconductor wafer, and forming the modified area | region by multiphoton absorption inside the said wafer.

(f) A step of dividing the semiconductor wafer and the adhesive layer along a dividing line by expanding the wafer processing tape by 10% to obtain a plurality of semiconductor chips with the adhesive layer.

(g) A portion of the wafer processing tape that is not overlapped with the semiconductor chip (a circular region between the region where the semiconductor chip is present and the ring frame) is heated and shrunk to 90 ° C or 120 ° C, thereby generating in the expansion process. Removing the relaxation to maintain the gap of the semiconductor chip.

(h) The process of picking up the said semiconductor chip with an adhesive bond layer from the adhesive layer of the tape for a wafer process.

About the external appearance evaluation of the tape for a wafer process of the said Example and a comparative example of the state affixed on the said ring frame, in the state before tape expansion for a wafer process immediately before the process of said (f), and immediately after the process of (g) Comparative evaluation was performed about the state after the tape heating for wafer processing. The result was shown in the column of "Appearance" of Table 3. As conditions of (f) and (g) process, the expansion speed | rate 300 mm / sec, the amount of expansion (push-up amount) 20 mm, and the warm air temperature of heat shrinkage were (1) 90 degreeC, and (2) 120 degreeC. In addition, in Table 3, "(circle)" shows the restoration in the state equivalent to before expansion, and "x" shows the relaxation generate | occur | produced compared with before expansion.

(2.3) Pickup Success Rate

According to the method described below, each of the tapes for wafer processing of the above-mentioned Examples and Comparative Examples was subjected to a conformance test in the following semiconductor processing step corresponding to the manufacturing method (A) of the semiconductor device described above.

(a) Process of bonding a surface protection tape to the semiconductor wafer surface in which the circuit pattern was formed.

(b) Background process of grinding the said semiconductor wafer back surface.

(c) While the semiconductor wafer is heated at 70 ° C., the adhesive layer of the tape for wafer processing is bonded to the back surface of the semiconductor wafer, and at the same time, the ring frame for wafer processing does not overlap the adhesive layer of the tape for wafer processing. Bonding to exposed parts without

(d) Peeling a surface protection tape from the surface of the said semiconductor wafer.

(e) Process of irradiating a laser beam to the division scheduled part of the said semiconductor wafer, and forming the modified area | region by multiphoton absorption inside the said wafer.

(f) A step of dividing the semiconductor wafer and the adhesive layer along the dividing line by expanding the wafer processing tape by 10% to obtain a plurality of semiconductor chips with the adhesive layer.

(g) A portion of the wafer processing tape that is not overlapped with the semiconductor chip (a circular region between the region where the semiconductor chip is present and the ring frame) is heated and shrunk to 90 ° C or 120 ° C, thereby generating in the expansion process. Removing the relaxation to maintain the gap of the semiconductor chip.

(h) The process of picking up the said semiconductor chip with an adhesive bond layer from the adhesive layer of the tape for a wafer process.

The yield (pickup success rate) in (h) process was evaluated as pickup evaluation in the case of using the tape for a wafer process of the said Example and the comparative example of the state attached to the said ring frame. As conditions for (f) and (g) process, the expansion speed | rate 300 mm / sec, the amount of expansion (push-up amount) 20 mm, and the warm air temperature of heat shrinkage were (1) 90 degreeC, and (2) 120 degreeC.

In the step (f), the dicing ring frame bonded to the wafer processing tape is pushed down by the expand ring of DDS-2300 manufactured by Disco Co., Ltd., using a DDS-2300 manufactured by Disco Co., Ltd. It expanded by pressing the part which does not overlap with a circular pushing-up member. In addition, an amount of expansion means the amount of change of the relative position of the ring frame and the pushing-up member before pushing down and after pushing down. Further, after the step (g) and before the step (h), 30 mW in a nitrogen atmosphere with a metal halide high pressure mercury lamp on the surface on the side opposite to the surface on which the adhesive layer in the substrate film of the wafer processing tape is laminated. Ultraviolet rays were irradiated under the conditions of / cm 2 and 200mJ / cm 2. And pick-up test by the dice picker apparatus (The Kennon Machinery Co., brand name CAP-300II) was performed about 100 chips diced at the process (h), and pick-up success rate was calculated | required. The result was shown to the column of "pickup success rate" of Table 3.

(3) Conclusion

As shown in Table 3, from the evaluation results of the appearance after the heat shrinkage, the tapes for wafer processing of Examples 1 to 6 using the thermoplastic crosslinked resin having a thermal conductivity of 0.15 W / m · K or more as the base film were relaxed even by heat shrinkage. It was clear that no break occurred. Moreover, it was also clear from the evaluation of pick-up success rate that it has favorable pick-up property. On the other hand, the tape for wafer processing of the comparative examples 1-8 which used the thermoplastic resin whose thermal conductivity is less than 0.15 W / m * K as a base film produces the relaxation and breakage by heat shrink from the result of evaluation of the appearance after heat shrink. . Moreover, it became clear from the evaluation of pick-up success rate that pick-up property was bad.

From the above results, it is useful to use a thermoplastic crosslinked resin having a thermal conductivity of 0.15 W / m · K or more as the base film 11 of the tape for wafer processing 10 from the viewpoint of heat shrinkability and pickup properties.

In addition, the manufacturing methods B-D of the semiconductor device mentioned above are the expansion process of the manufacturing method A of a semiconductor device, the heat shrink process, except that it is already divided | segmented into individual semiconductor chips in an expansion process. The process equivalent to the pick-up process is performed. Therefore, it is clear that the results when the tape 10 for wafer processing of Examples 1-6 and Comparative Examples 1-8 are used are equivalent to the result shown in Table 3, and manufacturing methods B-D of a semiconductor device are shown. Also in the case of using the tape 10 for wafer processing of the present invention, it is useful from the viewpoint of heat shrinkability and pickup properties. In addition, the base film 11 disclosed in Examples 1 to 6 has a content of chlorine atoms of less than 1% by mass, and even when incinerated after use, dioxin or a chlorinated aromatic hydrocarbon that is an analog thereof generates a load on the environment. none.

10: Tape for Wafer Processing
11: base film
12: pressure-sensitive adhesive layer
13: adhesive layer
14: surface protection tape
20: ring frame
21: stage
22: pushing up member
25: heater table
26: adsorption table
27: ultraviolet light source
28: heat shrink zone
29: hot air nozzle

Claims (10)

It is an expandable wafer processing tape used when dividing an adhesive bond layer along a chip by an expand,
Base film,
It has an adhesive layer formed on the said base film, and the adhesive bond layer formed on the said adhesive layer,
The said base film consists of a thermoplastic crosslinked resin whose thermal conductivity is 0.15 W / m * K or more, The tape for a wafer process characterized by the above-mentioned. The wafer processing tape according to claim 1, wherein the thermoplastic crosslinked resin comprises an ionomer resin obtained by crosslinking an ethylene- (meth) acrylic acid binary copolymer with metal ions. The wafer processing tape according to claim 1, wherein the thermoplastic crosslinked resin comprises an ionomer resin obtained by crosslinking an ethylene- (meth) acrylic acid- (meth) acrylic acid alkyl ester terpolymer with metal ions. The method of claim 1, wherein the thermoplastic crosslinked resin is a resin obtained by crosslinking a low density polyethylene having a specific gravity of 0.910 or more and less than 0.930 by electron beam irradiation, or a resin obtained by crosslinking an ultralow density polyethylene having a specific gravity of more than 0 and less than 0.910 by electron beam irradiation. Tape for wafer processing characterized by the above-mentioned. The wafer processing tape according to claim 1, wherein the thermoplastic crosslinked resin is a resin obtained by crosslinking an ethylene-vinyl acetate copolymer by electron beam irradiation. The tape for wafer processing according to any one of claims 1 to 5, wherein the thermoplastic crosslinked resin has a content of chlorine atoms of less than 1% by mass. The tape for wafer processing according to any one of claims 1 to 5, wherein
(a) bonding the surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(b) a backgrinding process for grinding the back surface of the semiconductor wafer,
(c) bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor wafer while heating the semiconductor wafer at 70 to 80 ° C;
(d) peeling a surface protection tape from the semiconductor wafer surface;
(e) irradiating a laser beam to a portion to be divided of the semiconductor wafer to form a modified region by multiphoton absorption in the wafer;
(f) expanding the wafer processing tape to divide the semiconductor wafer and the adhesive layer along a dividing line to obtain a plurality of semiconductor chips with the adhesive layer;
(g) heat shrinking a portion of the wafer processing tape that does not overlap with the semiconductor chip to remove the loosening generated in the expand process to maintain the gap of the semiconductor chip;
(h) process of picking up the said semiconductor chip with an adhesive bond layer from the adhesive layer of the tape for a wafer process
The tape for a wafer process used for the manufacturing method of the semiconductor device containing these. The tape for wafer processing according to any one of claims 1 to 5, wherein
(a) bonding the surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(b) a backgrinding process for grinding the back surface of the semiconductor wafer,
(c) bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor wafer while the semiconductor wafer is heated at 70 to 80 ° C;
(d) peeling a surface protection tape from the semiconductor wafer surface;
(e) irradiating laser light along the dividing line from the surface of the semiconductor wafer and dividing it into individual semiconductor chips;
(f) expanding the wafer processing tape to divide the adhesive layer for each of the semiconductor chips to obtain a plurality of semiconductor chips with the adhesive layer;
(g) heat shrinking a portion of the wafer processing tape that does not overlap with the semiconductor chip to remove the loosening generated in the expand process to maintain the gap of the semiconductor chip;
(h) process of picking up the said semiconductor chip with an adhesive bond layer from the adhesive layer of the tape for a wafer process
The tape for a wafer process used for the manufacturing method of the semiconductor device containing these. The tape for wafer processing according to any one of claims 1 to 5, wherein
(a) bonding the surface protection tape to the surface of the semiconductor wafer on which the circuit pattern is formed;
(b) a backgrinding process for grinding the back surface of the semiconductor wafer,
(c) bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor wafer while the semiconductor wafer is heated at 70 to 80 ° C;
(d) peeling a surface protection tape from the semiconductor wafer surface;
(e) cutting the semiconductor wafer along a dividing line using a dicing blade to divide the semiconductor wafer into individual semiconductor chips;
(f) expanding the wafer processing tape to divide the adhesive layer for each of the semiconductor chips to obtain a plurality of semiconductor chips with the adhesive layer;
(g) heat shrinking a portion of the wafer processing tape that does not overlap with the semiconductor chip to remove the loosening generated in the expand process to maintain the gap of the semiconductor chip;
(h) process of picking up the said semiconductor chip with an adhesive bond layer from the adhesive layer of the tape for a wafer process
The tape for a wafer process used for the manufacturing method of the semiconductor device containing these. The tape for wafer processing according to any one of claims 1 to 5, wherein
(a) cutting the semiconductor wafer on which the circuit pattern is formed using a dicing blade along a dividing line predetermined line to a depth less than the thickness of the wafer;
(b) bonding a surface protection tape to the surface of the semiconductor wafer;
(c) a backgrinding step of grinding the back surface of the semiconductor wafer and dividing it into individual semiconductor chips;
(d) bonding the adhesive layer of the tape for wafer processing to the back surface of the semiconductor chip while heating the semiconductor wafer at 70 to 80 ° C;
(e) peeling a surface protection tape from the semiconductor wafer surface;
(f) expanding the wafer processing tape to divide the adhesive layer for each of the semiconductor chips to obtain a plurality of semiconductor chips with the adhesive layer;
(g) heat shrinking a portion of the wafer processing tape that does not overlap with the semiconductor chip to remove the loosening generated in the expand process to maintain the gap of the semiconductor chip;
(h) process of picking up the said semiconductor chip with an adhesive bond layer from the adhesive layer of the tape for a wafer process
The tape for a wafer process used for the manufacturing method of the semiconductor device containing these.

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