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JP2009094127A - Film for processing semiconductor wafer - Google Patents

Film for processing semiconductor wafer Download PDF

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Publication number
JP2009094127A
JP2009094127A JP2007260829A JP2007260829A JP2009094127A JP 2009094127 A JP2009094127 A JP 2009094127A JP 2007260829 A JP2007260829 A JP 2007260829A JP 2007260829 A JP2007260829 A JP 2007260829A JP 2009094127 A JP2009094127 A JP 2009094127A
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Prior art keywords
film
semiconductor wafer
adhesive
processing
adhesive tape
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JP2007260829A
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Inventor
Yosuke Ogawara
洋介 大河原
Hiromitsu Maruyama
弘光 丸山
Yasumasa Morishima
泰正 盛島
Shinichi Ishiwatari
伸一 石渡
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Furukawa Electric Co Ltd
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Furukawa Electric Co Ltd
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Priority to JP2007260829A priority Critical patent/JP2009094127A/en
Priority to PCT/JP2008/056115 priority patent/WO2009044566A1/en
Publication of JP2009094127A publication Critical patent/JP2009094127A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesive Tapes (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film for processing semiconductor wafer, which can be cut into chip-sized pieces by being expanded without requiring a long time nor much labor to optimize expanding conditions. <P>SOLUTION: The film 10 for processing semiconductor wafer, which is a processing film of a multilayer structure comprising a generally circular adhesive film 11 to be cut into chip-sized pieces together with a semiconductor wafer W in a state of adhering to the semiconductor wafer W and expanded in the adhered state, and a generally circular adhesive tape 12 bonded to the other side of the adhesive film 11 which is the side opposite to the one adhered to the semiconductor wafer W. The ratio of the diameter of the adhesive film 11 relative to that of the adhesive tape 12 is within the range of 0.815-1. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体ウエハに接着した状態でエキスパンドされることにより、半導体ウエハとともにチップサイズに分断される接着フィルムと、接着フィルムの半導体ウエハに接着される面とは反対の面に貼り合わされた粘着テープを有する積層構造の半導体ウエハ加工用フィルムに関する。   The present invention relates to an adhesive film that is expanded in a state of being bonded to a semiconductor wafer so as to be divided into chip sizes together with the semiconductor wafer, and an adhesive that is bonded to a surface of the adhesive film opposite to the surface bonded to the semiconductor wafer. The present invention relates to a laminated semiconductor wafer processing film having a tape.

近時、半導体ウエハを個々のチップに分断する際に半導体ウエハを固定するためのダイシングテープと、分断された半導体チップをリードフレームやパッケージ基板等に接着するため、又は、スタックドパッケージにおいては、半導体チップ同士を積層、接着するためのダイボンディングフィルム（ダイアタッチフィルムともいう）との２つの機能を併せ持つダイシング・ダイボンディングフィルム（ＤＤＦ）が開発されている。   Recently, when a semiconductor wafer is divided into individual chips, a dicing tape for fixing the semiconductor wafer, and for bonding the divided semiconductor chips to a lead frame or a package substrate, or in a stacked package, A dicing die bonding film (DDF) having two functions of a die bonding film (also referred to as a die attach film) for laminating and bonding semiconductor chips has been developed.

従来のダイシング・ダイボンディングフィルムについて、図５及び図６を用いて説明する。図５は、ダイシング・ダイボンディングフィルム５０に半導体ウエハＷを搭載した状態を示す平面図である。また、図６は、ダイシング・ダイボンディングフィルム５０に、半導体ウエハＷとリングフレーム６０が貼り合わされた状態を示す断面図である。
図示のように、ダイシング・ダイボンディングフィルム５０は、ダイボンディングフィルムとして機能する接着フィルム５１と、ダイシングテープとして機能する粘着テープ５２とが積層された構造を有する。接着フィルム５１は、半導体ウエハＷの外径と同じか、又は、ウエハの位置ズレを考慮して、半導体ウエハＷの外径よりやや大きい外径の円形形状である。粘着テープ５２は、基材フィルム５２ａとその上に設けられた粘着剤層５２ｂとからなり、ダイシング用リングフレーム６０の内径よりも大きい外径の円形形状である。 A conventional dicing die bonding film will be described with reference to FIGS. FIG. 5 is a plan view showing a state in which the semiconductor wafer W is mounted on the dicing die bonding film 50. FIG. 6 is a sectional view showing a state in which the semiconductor wafer W and the ring frame 60 are bonded to the dicing die bonding film 50.
As illustrated, the dicing die bonding film 50 has a structure in which an adhesive film 51 functioning as a die bonding film and an adhesive tape 52 functioning as a dicing tape are laminated. The adhesive film 51 has a circular shape having an outer diameter that is the same as the outer diameter of the semiconductor wafer W or that is slightly larger than the outer diameter of the semiconductor wafer W in consideration of the positional deviation of the wafer. The adhesive tape 52 includes a base film 52a and an adhesive layer 52b provided thereon, and has a circular shape having an outer diameter larger than the inner diameter of the dicing ring frame 60.

半導体ウエハＷを個々のチップに切断する際には、ダイシングブレードを用いて半導体ウエハＷと接着フィルム５１とを研削して個片化し、その後、粘着テープ５２に紫外線照射等の硬化処理を施して個片化した半導体チップをピックアップする。このとき、粘着テープ５２は、硬化処理によって粘着力が低下しているので、接着フィルム５１から容易に剥離し、半導体チップは裏面に接着フィルム５１が付着した状態でピックアップされる。半導体チップの裏面に付着した接着フィルム５１は、その後、半導体チップをリードフレームやパッケージ基板、あるいは他の半導体チップに接着する際に、ダイボンディングフィルムとして機能する。   When the semiconductor wafer W is cut into individual chips, the semiconductor wafer W and the adhesive film 51 are ground and separated into pieces by using a dicing blade, and then the adhesive tape 52 is subjected to a curing process such as ultraviolet irradiation. Pick up the separated semiconductor chip. At this time, since the adhesive strength of the adhesive tape 52 is reduced by the curing process, the adhesive tape 52 is easily peeled off from the adhesive film 51, and the semiconductor chip is picked up with the adhesive film 51 attached to the back surface. The adhesive film 51 attached to the back surface of the semiconductor chip then functions as a die bonding film when the semiconductor chip is bonded to a lead frame, a package substrate, or another semiconductor chip.

しかしながら、上記のようにダイシングブレードを用いて半導体ウエハを切断する場合、ウエハにはブレードによる切削抵抗がかかるため、半導体ウエハ及び半導体チップの欠けや割れ（以下、チッピングという）が発生する場合がある。このような問題は、半導体ウエハの薄膜化の傾向が進むに従って、一層深刻化すると推測される。   However, when a semiconductor wafer is cut using a dicing blade as described above, the wafer is subjected to cutting resistance due to the blade, so that chipping or cracking (hereinafter referred to as chipping) of the semiconductor wafer and the semiconductor chip may occur. . Such a problem is presumed to become more serious as the trend of thinning semiconductor wafers progresses.

上記のような問題を解決する方法として、例えば、特許文献１には、レーザー加工装置を用いた半導体基板の切断方法が提案されている。特許文献１の半導体基板の切断方法は、ダイボンド樹脂層（接着フィルム）を介在させてシート（粘着テープ）が貼り付けられた半導体基板の内部に焦点光を合わせてレーザー光を照射することにより、半導体基板の内部に多光子吸収による改質領域を形成し、この改質領域で切断予定部を形成する工程と、シートを拡張（エキスパンド）させることにより、切断予定部に沿って半導体基板及びダイボンド樹脂層を切断する工程とを備えている。   As a method for solving the above problems, for example, Patent Document 1 proposes a semiconductor substrate cutting method using a laser processing apparatus. The semiconductor substrate cutting method of Patent Document 1 is performed by irradiating a laser beam with focused light inside a semiconductor substrate on which a sheet (adhesive tape) is attached with a die bond resin layer (adhesive film) interposed therebetween. Forming a modified region by multiphoton absorption inside the semiconductor substrate, forming a portion to be cut in the modified region, and expanding (expanding) the sheet, thereby extending the semiconductor substrate and die bond along the portion to be cut. And a step of cutting the resin layer.

特許文献１の半導体基板の切断方法によれば、半導体内部に形成された切断予定部を起点として、比較的小さな力で半導体基板の厚さ方向に割れが発生するため、半導体基板に貼り付けられたシート（粘着テープ）を拡張させると、切断予定部に沿って半導体基板を精度良く切断することができる。また、このとき、切断された半導体基板の対向する切断面は、シート（粘着テープ）のエキスパンドに伴って離間していくため、半導体基板とシート（粘着テープ）との間に存在するダイボンド樹脂層（接着フィルム）も切断予定部に沿って切断される。   According to the method for cutting a semiconductor substrate of Patent Document 1, since a crack is generated in the thickness direction of the semiconductor substrate with a relatively small force starting from a planned cutting portion formed inside the semiconductor, the semiconductor substrate is attached to the semiconductor substrate. When the sheet (adhesive tape) is expanded, the semiconductor substrate can be accurately cut along the planned cutting portion. At this time, the cut surfaces of the cut semiconductor substrate are separated from each other as the sheet (adhesive tape) expands, so that the die bond resin layer existing between the semiconductor substrate and the sheet (adhesive tape). (Adhesive film) is also cut along the planned cutting portion.

このような切断方法では、レーザー光の照射とシートのエキスパンドによって、非接触で半導体ウエハとダイボンド樹脂層（接着シート）を切断することができるので、ダイシングブレードを用いる場合のようなチッピングを発生させることなく半導体ウエハの切断が可能である。したがって、例えば５０μｍ以下の極薄半導体ウエハを切断する場合に特に有用である。
特開２００３−３３８４６７号公報 In such a cutting method, since the semiconductor wafer and the die bond resin layer (adhesive sheet) can be cut in a non-contact manner by laser light irradiation and sheet expansion, chipping as in the case of using a dicing blade is generated. The semiconductor wafer can be cut without any problems. Therefore, it is particularly useful when, for example, an ultrathin semiconductor wafer of 50 μm or less is cut.
JP 2003-338467 A

しかしながら、上記のようにエキスパンドによって接着フィルムを分断する場合、接着フィルムを１００％分断するためには、エキスパンドスピードやエキスパンド量などのエキスパンド条件の最適化が必要であり、多大な時間や労力を要してしまう。   However, when the adhesive film is divided by the expand as described above, it is necessary to optimize the expansion conditions such as the expansion speed and the amount of expansion in order to divide the adhesive film to 100%, which requires a lot of time and labor. Resulting in.

そこで、本発明の目的は、エキスパンド条件の最適化のために多大な時間や労力を要することなく、エキスパンドによって良好に分断可能な半導体ウエハ加工用フィルムを提供することにある。   Accordingly, an object of the present invention is to provide a film for processing a semiconductor wafer that can be satisfactorily divided by an expand without requiring much time and labor for optimization of the expand conditions.

本発明の半導体ウエハ加工用フィルムは、半導体ウエハに接着した状態でエキスパンドされることにより、半導体ウエハとともにチップサイズに分断される略円形の接着フィルムと、前記接着フィルムの半導体ウエハに接着される面とは反対の面に貼り合わされた略円形の粘着テープとを有する積層構造の加工用フィルムであって、
前記接着フィルムの前記粘着テープに対する直径比が、０．８１５〜１の範囲であることを特徴とする。 The film for processing a semiconductor wafer of the present invention is expanded in a state of being bonded to a semiconductor wafer, and is divided into a chip size together with the semiconductor wafer, and the surface of the adhesive film bonded to the semiconductor wafer. A processing film of a laminated structure having a substantially circular adhesive tape bonded to the opposite surface,
A diameter ratio of the adhesive film to the pressure-sensitive adhesive tape is in a range of 0.815 to 1.

前記半導体ウエハ加工用フィルムは、
（ａ）半導体ウエハの分割予定部分に予めレーザー光を照射して、該ウエハの内部に多光子吸収による改質領域を形成する工程と、
（ｂ）前記半導体ウエハに前記半導体ウエハ加工用フィルムを貼り付ける工程と
を順序不同に含み、さらに、
（ｃ）前記半導体ウエハ加工用フィルムをエキスパンドし、前記半導体ウエハ及び接着フィルムを分割予定ラインに沿って分断することにより、複数の接着フィルム付き半導体チップを得る工程と
を含む半導体装置の製造方法に好適に使用される。 The semiconductor wafer processing film is
(A) irradiating a laser beam to a part to be divided of a semiconductor wafer in advance, and forming a modified region by multiphoton absorption inside the wafer;
(B) including, in random order, attaching the semiconductor wafer processing film to the semiconductor wafer;
(C) expanding the film for processing a semiconductor wafer, and dividing the semiconductor wafer and the adhesive film along a predetermined dividing line to obtain a plurality of semiconductor chips with an adhesive film. Preferably used.

前記粘着テープは、エキスパンド時に使用するリングフレームの内径と同じか又はそれ以上の直径を有することが好ましい。
また、前記粘着テープは、以下の条件下で引張試験を行ったときに、テープ伸び率１０％での引張荷重が１０Ｎ以上であることが好ましい。
試験片の幅：２５ｍｍ
試験片の標線間距離：１００ｍｍ
つかみ具間距離：１００ｍｍ
引張速度：３００ｍｍ／ｍｉｎ
さらに、前記接着フィルムは、以下の条件下で引張試験を行ったときに、破断荷重が１０Ｎ以下であることが好ましい。
試験片の幅：１０ｍｍ
試験片の標線間距離：４０ｍｍ
引張速度：３００ｍｍ／ｍｉｎ The pressure-sensitive adhesive tape preferably has a diameter equal to or larger than the inner diameter of the ring frame used during expansion.
The adhesive tape preferably has a tensile load of 10 N or more at a tape elongation of 10% when a tensile test is performed under the following conditions.
Specimen width: 25 mm
Distance between marked lines of test piece: 100 mm
Distance between grips: 100mm
Tensile speed: 300 mm / min
Furthermore, the adhesive film preferably has a breaking load of 10 N or less when a tensile test is performed under the following conditions.
Specimen width: 10 mm
Distance between marked lines of test piece: 40 mm
Tensile speed: 300 mm / min

本発明によれば、接着フィルムの粘着テープに対する直径比を０．８１５〜１と大きくする、すなわち、接着フィルムの直径を粘着テープの直径と同じか又は同直径に近づけることで、エキスパンドによって半導体ウエハ加工用テープが受ける張力を接着フィルムにも均一に印加させることが可能となる。これにより、接着フィルムを均一に伸張させることができ、接着フィルムの分断性を向上させることができる。また、接着フィルムの分断性の向上により、エキスパンド条件の最適化に要する時間や労力を軽減することができるという効果が得られる。   According to the present invention, the diameter ratio of the adhesive film to the pressure-sensitive adhesive tape is increased to 0.815 to 1, that is, the diameter of the adhesive film is the same as or close to the diameter of the pressure-sensitive adhesive tape, thereby expanding the semiconductor wafer. The tension received by the processing tape can be evenly applied to the adhesive film. Thereby, an adhesive film can be extended | stretched uniformly and the parting property of an adhesive film can be improved. Moreover, the effect that the time and labor which are required for optimization of an expanding condition can be reduced by the improvement of the parting property of an adhesive film is acquired.

以下に本発明の実施の形態を図面に基づいて詳細に説明する。
図１は、本発明の実施形態に係る半導体ウエハ加工用フィルム１０に、半導体ウエハＷが貼り合わされた状態を示す平面図である。図２は、半導体ウエハ加工用フィルム１０に、半導体ウエハＷとエキスパンド用リングフレーム２０が貼り合わされた状態を示す断面図である。
本実施形態の半導体ウエハ加工用フィルム１０は、接着フィルム１１と、粘着テープ１２とが積層された構造を有する。粘着テープ１２は、基材フィルム１２ａと、その上に設けられた粘着剤層１２ｂとからなる。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a plan view showing a state in which a semiconductor wafer W is bonded to a semiconductor wafer processing film 10 according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a state in which the semiconductor wafer W and the expanding ring frame 20 are bonded to the semiconductor wafer processing film 10.
The semiconductor wafer processing film 10 of this embodiment has a structure in which an adhesive film 11 and an adhesive tape 12 are laminated. The pressure-sensitive adhesive tape 12 includes a base film 12a and a pressure-sensitive adhesive layer 12b provided thereon.

接着フィルム１１及び粘着テープ１２は、それぞれ半導体ウエハの形状に対する略円形形状を有しており、接着フィルム１１の粘着テープ１２に対する直径比は、０．８１５〜１の範囲に設定される。粘着テープ１２は、後述するエキスパンド用のリングフレームの内径と同じか又はそれ以上の直径を有する。   The adhesive film 11 and the pressure-sensitive adhesive tape 12 each have a substantially circular shape with respect to the shape of the semiconductor wafer, and the diameter ratio of the adhesive film 11 to the pressure-sensitive adhesive tape 12 is set in the range of 0.815 to 1. The adhesive tape 12 has a diameter equal to or larger than the inner diameter of the expanding ring frame described later.

本実施形態の半導体ウエハ加工用フィルム１０を使用して、接着フィルム付き半導体チップを製造する方法について説明する。
まず、図３に示すように、半導体ウエハＷの分割予定部分にレーザー光を照射して、ウエハ内部に多光子吸収による改質領域を３０形成する。次いで、図４（ａ）に示すように、半導体ウエハＷと半導体ウエハ下降用フィルム１０の接着フィルム１１とを貼り合わせ、粘着テープ１２の外周部にリングフレーム２０を貼り付けて、粘着テープ１２の基材フィルム１２ｂの下面を、エキスパンド装置のステージ２１上に載置する。図中、符号２２は、エキスパンド装置の中空円柱形状の突き上げ部材である。
なお、半導体ウエハＷにレーザー光を照射する工程に先立って、半導体ウエハ加工用フィルム１０との貼合せ工程を実施してもよい。 A method for manufacturing a semiconductor chip with an adhesive film using the semiconductor wafer processing film 10 of the present embodiment will be described.
First, as shown in FIG. 3, a laser beam is irradiated on a portion to be divided of the semiconductor wafer W to form 30 modified regions by multiphoton absorption inside the wafer. Next, as shown in FIG. 4A, the semiconductor wafer W and the adhesive film 11 of the semiconductor wafer lowering film 10 are bonded together, the ring frame 20 is bonded to the outer periphery of the adhesive tape 12, and the adhesive tape 12 The lower surface of the base film 12b is placed on the stage 21 of the expanding apparatus. In the figure, reference numeral 22 denotes a hollow cylindrical push-up member of the expanding device.
Prior to the step of irradiating the semiconductor wafer W with laser light, a bonding step with the semiconductor wafer processing film 10 may be performed.

次に、図４（ｂ）に示すように、リングフレーム２０を固定した状態で、エキスパンド装置の突き上げ部材２２を上昇させ、半導体ウエハ加工用フィルム１０をエキスパンドする。このエキスパンドにより、接着フィルム及び粘着テープ１２が引き伸ばされ、半導体ウエハＷが、改質領域を起点としてチップ単位で分断されるとともに、接着フィルム１１も分断される。
その後、粘着テープ１２に放射線硬化処理又は熱硬化処理等を施し、半導体チップをピックアップすることで、接着シート付き半導体チップを得ることができる。
なお、エキスパンド工程に先立って、粘着テープ１２の硬化処理を実施してもよい。 Next, as shown in FIG. 4B, in the state where the ring frame 20 is fixed, the push-up member 22 of the expanding device is raised, and the semiconductor wafer processing film 10 is expanded. By this expansion, the adhesive film and the adhesive tape 12 are stretched, and the semiconductor wafer W is divided in units of chips starting from the modified region, and the adhesive film 11 is also divided.
Thereafter, the adhesive tape 12 is subjected to a radiation curing process or a thermosetting process, and a semiconductor chip with an adhesive sheet can be obtained by picking up the semiconductor chip.
In addition, you may implement the hardening process of the adhesive tape 12 prior to an expanding process.

上記のような接着フィルム付き半導体チップの製造方法において、接着フィルム１１の粘着テープ１２に対する直径比が０．８１５よりも小さい場合には、エキスパンド装置の突き上げ部材２２の上昇によって、粘着テープの外周部分が引き伸ばされ、この粘着テープの伸びによって接着フィルムが引き伸ばされて切断されるが、この場合、エキスパンドによってフィルム１０が受ける張力の一部が、粘着テープの伸びによって吸収されてしまうので、内側の接着フィルムを均一に引き伸ばすことができず、接着フィルムを１００％分断することが困難となる。   In the method for manufacturing a semiconductor chip with an adhesive film as described above, when the diameter ratio of the adhesive film 11 to the adhesive tape 12 is smaller than 0.815, the outer peripheral portion of the adhesive tape is raised by raising the push-up member 22 of the expanding device. Is stretched, and the adhesive film is stretched and cut by the extension of the adhesive tape. In this case, a part of the tension applied to the film 10 by the expand is absorbed by the extension of the adhesive tape. The film cannot be stretched uniformly, making it difficult to cut the adhesive film 100%.

これに対し、本発明の半導体加工用フィルム１０は、接着フィルム１１の粘着テープ１２に対する直径比が０．８１５〜１に設定されているので、接着フィルム１１の直径が粘着テープ１２の直径と同じか又は同直径に近く、エキスパンドによる張力を接着フィルム１１にも均一に印加させることが可能となる。したがって、接着フィルム１１を均一に伸張させることができ、接着フィルムの分断性を向上させることができる。また、接着フィルムの分断性の向上により、エキスパンド条件の最適化に要する時間や労力を縮減することができる。   On the other hand, since the diameter ratio of the adhesive film 11 to the adhesive tape 12 of the film for semiconductor processing 10 of the present invention is set to 0.815 to 1, the diameter of the adhesive film 11 is the same as the diameter of the adhesive tape 12. Or close to the same diameter, it is possible to apply the tension by the expand to the adhesive film 11 evenly. Therefore, the adhesive film 11 can be uniformly stretched, and the breakability of the adhesive film can be improved. In addition, the time and labor required for optimizing the expanding conditions can be reduced by improving the splitting property of the adhesive film.

本発明の半導体加工用フィルム１０は、接着フィルムと粘着テープとが積層されたものであり、ウエハ１枚分毎に切断された形態と、これが複数形成された長尺のシートをロール状に巻き取った形態とを含む。
ロール状に巻き取った形態では、接着フィルムの粘着テープに対する直径比を０．８１５〜１と大きくすることで、接着フィルムのウエハ貼付け部分に、各層の段差に起因する巻きシワ（転写痕、又は、巻き跡ともいう）が形成されることを軽減させる効果が得られ、接着フィルムとウエハとの接着不良の抑制が期待できる。 The film for semiconductor processing 10 of the present invention is formed by laminating an adhesive film and an adhesive tape, and is wound in a roll shape with a form cut for each wafer and a long sheet formed of a plurality of such sheets. Including the removed form.
In the form wound in a roll, the diameter ratio of the adhesive film to the pressure-sensitive adhesive tape is increased to 0.815 to 1, thereby winding wrinkles (transfer marks or , Which is also referred to as a winding mark), and the effect of reducing the adhesion failure between the adhesive film and the wafer can be expected.

次に、本実施形態のウエハ加工用フィルム１０の各構成要素について詳細に説明する。
（接着フィルム）
接着フィルム１１は、半導体ウエハが貼り合わされ切断された後、チップをピックアップする際に、切断された接着フィルム１１が粘着テープ１２から剥離してチップに付着しており、チップをパッケージ基板やリードフレームに固定する際のボンディングフィルムとして機能するものである。 Next, each component of the film 10 for wafer processing of this embodiment is demonstrated in detail.
(Adhesive film)
When the chip is picked up after the semiconductor wafer is bonded and cut, the adhesive film 11 is peeled off from the adhesive tape 12 and attached to the chip, and the chip is attached to the package substrate or lead frame. It functions as a bonding film when it is fixed to.

接着フィルム１１は、以下の条件下で引張試験を行ったときに、破断荷重が１０Ｎ以下であることが望ましい。
試験片の幅：１０ｍｍ
試験片の標線間距離：４０ｍｍ
引張速度：３００ｍｍ／ｍｉｎ
標線間距離及びつかみ具間距離は、ＪＩＳ Ｋ ７１１３による規定に基づく。
破断荷重が１０Ｎを超えると、切断されたチップとともに切断され難くなってしまう。すなわち、エキスパンド時の分断性を向上させるためには、接着フィルム１１は、破断荷重が１０Ｎ以下であることが好ましい。
また、破断荷重が１０Ｎを超えると、より高速でエキスパンドしなければ接着フィルム１１が切断できなくなる。より高速でエキスパンドするためにはエキスパンド装置の強化（装置改造）が必要となり、やはりエキスパンド条件の最適化に要する時間や労力が増してしまう。 The adhesive film 11 desirably has a breaking load of 10 N or less when a tensile test is performed under the following conditions.
Specimen width: 10mm
Distance between marked lines of test piece: 40 mm
Tensile speed: 300 mm / min
The distance between the marked lines and the distance between the grips are based on the JIS K 7113 standard.
When the breaking load exceeds 10 N, it becomes difficult to cut along with the cut chips. That is, in order to improve the dividing property at the time of expansion, it is preferable that the adhesive film 11 has a breaking load of 10 N or less.
If the breaking load exceeds 10 N, the adhesive film 11 cannot be cut unless it is expanded at a higher speed. In order to expand at a higher speed, it is necessary to strengthen the expansion apparatus (modification of the apparatus), which also increases the time and labor required to optimize the expansion conditions.

接着フィルム１１としては、特に限定されるものではないが、上記物性値を満たす、ダイボンディングフィルムとして一般的に使用されるフィルム状接着剤を好適に使用することができ、ポリイミド系接着剤、アクリル系粘接着剤、エポキシ樹脂／フェノール樹脂／アクリル樹脂／無機フィラーのブレンド系粘接着剤等が好ましい。その厚さは適宜設定してよいが、５〜１００μｍ程度が好ましい。   Although it does not specifically limit as the adhesive film 11, The film adhesive generally used as a die-bonding film which satisfy | fills the said physical-property value can be used conveniently, a polyimide-type adhesive agent, acrylic Preferable adhesives such as epoxy adhesives, blends of epoxy resin / phenolic resin / acrylic resin / inorganic filler, and the like. The thickness may be appropriately set, but is preferably about 5 to 100 μm.

本発明の半導体ウエハ加工用フィルムは、予め円形形状にカットされた接着フィルムを、粘着テープ上に直接にラミネートすることによって形成することができる。ラミネート時の温度は１０〜１００℃の範囲で、０．０１〜１０Ｎ／ｍの線圧をかけることが好ましい。   The film for processing a semiconductor wafer of the present invention can be formed by directly laminating an adhesive film that has been cut into a circular shape in advance on an adhesive tape. It is preferable to apply a linear pressure of 0.01 to 10 N / m in a temperature range of 10 to 100 ° C. during laminating.

（粘着テープ）
粘着テープ１２は、半導体ウエハのダイシング工程で、切断されたチップが飛び散らないようにウエハを固定するものであり、ウエハを強力に固定する高い粘着力が求められる一方で、チップのピックアップ時には、チップから容易に剥がれることが求められる。 (Adhesive tape)
The adhesive tape 12 fixes the wafer so that the cut chips are not scattered in the dicing process of the semiconductor wafer, and requires a high adhesive force to firmly fix the wafer. Is required to be easily peeled off.

粘着テープ１２は、以下の条件下で引張試験を行ったときに、テープ伸び率１０％での引張荷重が１０Ｎ以上であることが好ましい。引張荷重が１０Ｎより小さいと、エキスパンド時のスピードや力がウエハ中央部まで伝わらなかったり、その前にダイシングテープが破断したりしてしまう。
試験片の幅：２５ｍｍ
試験片の標線間距離：１００ｍｍ
つかみ具間距離：１００ｍｍ
引張速度：３００ｍｍ／ｍｉｎ
標線間距離及びつかみ具間距離は、ＪＩＳ Ｋ ７１１３による規定に基づく。 The adhesive tape 12 preferably has a tensile load of 10 N or more at a tape elongation of 10% when a tensile test is performed under the following conditions. If the tensile load is less than 10 N, the speed and force at the time of expansion may not be transmitted to the center of the wafer, or the dicing tape may break before that.
Specimen width: 25 mm
Distance between marked lines of test piece: 100 mm
Distance between grips: 100mm
Tensile speed: 300 mm / min
The distance between the marked lines and the distance between the grips are based on the JIS K 7113 standard.

基材フィルム１２ａは、複層でもよいし単層で構成されていてもよい。基材フィルム１２ａの構成材料としては、特に限定されるものではなく、従来公知の各種プラスチック、ゴムなどを使用できるが、その中でも、上記物性値を満たすものが好ましい。   The base film 12a may be a multilayer or a single layer. The constituent material of the base film 12a is not particularly limited, and various conventionally known plastics and rubbers can be used. Among them, those satisfying the above physical property values are preferable.

後述する粘着剤層１２ｂとして、放射線照射により硬化して粘接着力の制御を行うタイプのものを使用する場合には、基材フィルム１２ａは放射線透過性であることが好ましく、粘着剤が硬化する波長での放射線透過性の良いものを選択することが好ましい。このような基材としては、例えばポリエチレン、ポリプロピレン、エチレン−プロピレン共重合体、ポリブテン−１、ポリ−４−メチルペンテン−１、エチレン−酢酸ビニル共重合体、エチレン−アクリル酸エチル共重合体、エチレン−アクリル酸メチル共重合体、エチレン−アクリル酸共重合体、アイオノマーなどのα−オレフィンの単独重合体または共重合体あるいはこれらの混合物、ポリウレタン、スチレン−エチレン−ブテンもしくはペンテン系共重合体、ポリアミド−ポリオール共重合体等の熱可塑性エラストマー、およびこれらの混合物を挙げることができる。また、これらを複層にしたものを使用しても良い。   When the adhesive layer 12b to be described later is of a type that cures by irradiation and controls adhesive strength, the substrate film 12a is preferably radiation transmissive and the adhesive is cured. It is preferable to select one having good radiation transparency at a wavelength. Examples of such a base material include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, Α-olefin homopolymer or copolymer such as ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, ionomer or a mixture thereof, polyurethane, styrene-ethylene-butene or pentene copolymer, Mention may be made of thermoplastic elastomers such as polyamide-polyol copolymers and mixtures thereof. Moreover, you may use what made these two or more layers.

なお、基材フィルム１２ａは、エキスパンド後、接着フィルム付半導体チップをピックアップする際に、チップ間隙を大きくするために、ネッキング（基材フィルムを放射状延伸したときに起こる力の伝播性不良による部分的な伸びの発生）の極力少ないものが好ましい。このような基材フィルムとしては、例えばポリウレタンのほか、スチレン−エチレン−ブテンもしくはペンテン系共重合体等を例示することができるが、特にモノマー成分としてスチレンを有する共重合体を使用する場合には、分子量やスチレン含有量を適宜選択することが好ましい。ダイシング時の伸びあるいはたわみを防止するには架橋した基材フィルムを選択することが好ましい。   Note that the base film 12a has a necking (partial due to poor force propagation when the base film is stretched radially) in order to increase the chip gap when the semiconductor chip with an adhesive film is picked up after expansion. That are as small as possible). As such a base film, for example, in addition to polyurethane, styrene-ethylene-butene or pentene-based copolymer can be exemplified, but particularly when a copolymer having styrene as a monomer component is used. It is preferable to appropriately select the molecular weight and the styrene content. In order to prevent elongation or deflection during dicing, it is preferable to select a cross-linked base film.

さらには基材フィルム１２ａの粘接着剤層１２ｂが設けられる側の表面には、粘接着剤層１２ｂとの接着性を向上させるためにコロナ処理、あるいはプライマー層を設ける等の処理を適宜施してもよい。
基材フィルム１２ａの厚みは、強伸度特性、放射線透過性の観点から通常５０〜２００μｍが適当である。 Further, the surface of the base film 12a on the side where the adhesive layer 12b is provided is appropriately subjected to a treatment such as a corona treatment or a primer layer in order to improve the adhesiveness with the adhesive layer 12b. You may give it.
The thickness of the base film 12a is usually appropriately 50 to 200 μm from the viewpoint of strong elongation characteristics and radiation transparency.

粘着剤層１２ｂは、基材フィルム１２ａ上に粘着剤を塗工して製造することができる。粘着剤層１２ｂとしては特に制限はなく、エキスパンドの際に接着剤層１１及び半導体ウエハが剥離したりしない程度の保持性や、ピックアップ時には接着剤層１１と剥離が容易とする特性を有するものであればよい。ピックアップ性を向上させるために、粘着剤層１２ｂは放射線硬化性のものが好ましく、接着剤層１１との剥離が容易な材料であることが好ましい。   The pressure-sensitive adhesive layer 12b can be manufactured by applying a pressure-sensitive adhesive on the base film 12a. The pressure-sensitive adhesive layer 12b is not particularly limited, and has such a property that the adhesive layer 11 and the semiconductor wafer are not peeled off during expansion, and has characteristics that can be easily peeled off from the adhesive layer 11 during pick-up. I just need it. In order to improve the pickup property, the pressure-sensitive adhesive layer 12b is preferably a radiation curable material, and is preferably a material that can be easily peeled off from the adhesive layer 11.

例えば、本発明では、主鎖に対して、少なくとも放射線硬化性炭素−炭素二重結合含有基、水酸基及びカルボキシル基を含有する基をそれぞれ有するアクリル系共重合体を主成分とし、かつゲル分率が６０％以上であることが好ましい。さらには、分子中にヨウ素価０．５〜２０の放射線硬化性炭素−炭素二重結合を有する化合物（Ａ）と、ポリイソシアネート類、メラミン・ホルムアルデヒド樹脂、およびエポキシ樹脂から選ばれた少なくとも１種の化合物（Ｂ）を付加反応させてなるポリマーを含有していることが好ましい。   For example, in the present invention, the main chain is an acrylic copolymer having at least a radiation-curable carbon-carbon double bond-containing group, a hydroxyl group, and a group containing a carboxyl group, and the gel fraction. Is preferably 60% or more. Furthermore, at least one selected from a compound (A) having a radiation curable carbon-carbon double bond having an iodine value of 0.5 to 20 in the molecule, a polyisocyanate, a melamine / formaldehyde resin, and an epoxy resin. It is preferable to contain a polymer obtained by addition reaction of the compound (B).

粘着剤層の主成分の１つである化合物（Ａ）について説明する。化合物（Ａ）の放射線硬化性炭素−炭素二重結合の好ましい導入量はヨウ素価で０．５〜２０、より好ましくは０．８〜１０である。ヨウ素価が０．５以上であると、放射線照射後の粘着力の低減効果を得ることができ、ヨウ素価が２０以下であれば、放射線照射後の粘着剤の流動性が十分で、延伸後の素子間隙を十分得ることができるため、ピックアップ時に各素子の画像認識が困難になるという問題が抑制できる。さらに、化合物（Ａ）そのものに安定性があり、製造が容易となる。   The compound (A) that is one of the main components of the pressure-sensitive adhesive layer will be described. A preferable introduction amount of the radiation curable carbon-carbon double bond of the compound (A) is 0.5 to 20, more preferably 0.8 to 10 in terms of iodine value. If the iodine value is 0.5 or more, an effect of reducing the adhesive strength after irradiation can be obtained. If the iodine value is 20 or less, the fluidity of the adhesive after irradiation is sufficient and after stretching. Therefore, the problem that the image recognition of each element becomes difficult at the time of pick-up can be suppressed. Furthermore, the compound (A) itself is stable and easy to manufacture.

上記化合物（Ａ）は、ガラス転移点が−７０℃〜０℃であることが好ましく、−６６℃〜−２８℃であることがより好ましい。ガラス転移点（以下、Ｔｇという。）が−７０℃以上であれば、放射線照射に伴う熱に対する耐熱性が十分であり、０℃以下であれば、表面状態が粗いウエハにおけるダイシング後の素子の飛散防止効果が十分得られる。   The compound (A) preferably has a glass transition point of −70 ° C. to 0 ° C., more preferably −66 ° C. to −28 ° C. When the glass transition point (hereinafter referred to as Tg) is −70 ° C. or higher, the heat resistance against heat associated with radiation irradiation is sufficient, and when the glass transition point is 0 ° C. or lower, the element after dicing on the wafer having a rough surface state. A sufficient scattering prevention effect can be obtained.

上記化合物（Ａ）はどのようにして製造されたものでもよいが、例えば、アクリル系共重合体またはメタクリル系共重合体などの放射線硬化性炭素−炭素二重結合を有し、かつ、官能基をもつ化合物（（１））と、その官能基と反応し得る官能基をもつ化合物（（２））とを反応させて得たものが用いられる。   The compound (A) may be produced by any method, and has, for example, a radiation curable carbon-carbon double bond such as an acrylic copolymer or a methacrylic copolymer, and a functional group. A compound obtained by reacting a compound having the functional group ((1)) with a compound having a functional group capable of reacting with the functional group ((2)) is used.

このうち、前記の放射線硬化性炭素−炭素二重結合および官能基を有する化合物（（１））は、アクリル酸アルキルエステルまたはメタクリル酸アルキルエステルなどの放射線硬化性炭素−炭素二重結合を有する単量体（（１）−１）と、官能基を有する単量体（（１）−２）とを共重合させて得ることができる。粘着剤二重結合量については加熱乾燥された粘着剤約１０ｇに含まれる炭素−炭素二重結合量を真空中暗所における臭素付加反応による重量増加法により定量測定できる。   Among these, the compound ((1)) having the radiation curable carbon-carbon double bond and the functional group is a single compound having a radiation curable carbon-carbon double bond such as an acrylic acid alkyl ester or a methacrylic acid alkyl ester. It can be obtained by copolymerizing a monomer ((1) -1) and a monomer ((1) -2) having a functional group. About the amount of adhesive double bonds, the amount of carbon-carbon double bonds contained in about 10 g of the heat-dried adhesive can be quantitatively measured by a weight increase method by bromine addition reaction in a dark place in vacuum.

単量体（（１）−１）としては、炭素数６〜１２のヘキシルアクリレート、ｎ−オクチルアクリレート、イソオクチルアクリレート、２−エチルヘキシルアクリレート、ドデシルアクリレート、デシルアクリレート、または炭素数５以下の単量体である、ペンチルアクリレート、ｎ−ブチルアクリレート、イソブチルアクリレート、エチルアクリレート、メチルアクリレート、またはこれらと同様のメタクリレートなどを列挙することができる。   As a monomer ((1) -1), C6-C12 hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, or a single quantity of 5 or less carbon atoms The pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, or methacrylates similar to these can be listed.

単量体（（１）−１）として、炭素数の大きな単量体を使用するほどガラス転移点は低くなるので、所望のガラス転移点のものを作製することができる。また、ガラス転移点の他、相溶性と各種性能を上げる目的で酢酸ビニル、スチレン、アクリロニトリルなどの炭素−炭素二重結合をもつ低分子化合物を配合することも単量体（（１）−１）の総質量の５質量％以下の範囲内で可能である。   Since a glass transition point becomes so low that a monomer with a large carbon number is used as a monomer ((1) -1), the thing of a desired glass transition point can be produced. In addition to the glass transition point, a monomer ((1) -1) may be blended with a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene, acrylonitrile for the purpose of improving compatibility and various performances. ) In the range of 5% by mass or less of the total mass.

単量体（（１）−２）が有する官能基としては、カルボキシル基、水酸基、アミノ基、環状酸無水基、エポキシ基、イソシアネート基などを挙げることができ、単量体（（１）−２）の具体例としては、アクリル酸、メタクリル酸、ケイ皮酸、イタコン酸、フマル酸、フタル酸、２−ヒドロキシアルキルアクリレート類、２−ヒドロキシアルキルメタクリレート類、グリコールモノアクリレート類、グリコールモノメタクリレート類、Ｎ−メチロールアクリルアミド、Ｎ−メチロールメタクリルアミド、アリルアルコール、Ｎ−アルキルアミノエチルアクリレート類、Ｎ−アルキルアミノエチルメタクリレート類、アクリルアミド類、メタクリルアミド類、無水マレイン酸、無水イタコン酸、無水フマル酸、無水フタル酸、グリシジルアクリレート、グリシジルメタクリレート、アリルグリシジルエーテル、ポリイソシアネート化合物のイソシアネート基の一部を水酸基またはカルボキシル基および放射線硬化性炭素−炭素二重結合を有する単量体でウレタン化したものなどを列挙することができる。   Examples of the functional group of the monomer ((1) -2) include a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group. The monomer ((1)- Specific examples of 2) include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates. N-methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, Phthalic anhydride, glycidyl acrylic And glycidyl methacrylate, allyl glycidyl ether, and those obtained by urethanizing a part of the isocyanate group of a polyisocyanate compound with a monomer having a hydroxyl group or a carboxyl group and a radiation curable carbon-carbon double bond. it can.

化合物（２）において、用いられる官能基としては、化合物（１）、つまり単量体（（１）−２）の有する官能基が、カルボキシル基または環状酸無水基である場合には、水酸基、エポキシ基、イソシアネート基などを挙げることができ、水酸基である場合には、環状酸無水基、イソシアネート基などを挙げることができ、アミノ基である場合には、エポキシ基、イソシアネート基などを挙げることができ、エポキシ基である場合には、カルボキシル基、環状酸無水基、アミノ基などを挙げることができ、具体例としては、単量体（（１）−２）の具体例で列挙したものと同様のものを列挙することができる。
化合物（１）と化合物（２）の反応において、未反応の官能基を残すことにより、酸価または水酸基価などの特性に関して、本発明で規定するものを製造することができる。 In the compound (2), as the functional group used, when the functional group of the compound (1), that is, the monomer ((1) -2) is a carboxyl group or a cyclic acid anhydride group, a hydroxyl group, Examples include an epoxy group and an isocyanate group. In the case of a hydroxyl group, examples include a cyclic acid anhydride group and an isocyanate group. In the case of an amino group, examples include an epoxy group and an isocyanate group. In the case of an epoxy group, a carboxyl group, a cyclic acid anhydride group, an amino group and the like can be mentioned. Specific examples include those listed in the specific examples of the monomer ((1) -2) Can be listed.
By leaving an unreacted functional group in the reaction between the compound (1) and the compound (2), it is possible to produce those specified in the present invention with respect to characteristics such as acid value or hydroxyl value.

上記の化合物（Ａ）の合成において、反応を溶液重合で行う場合の有機溶剤としては、ケトン系、エステル系、アルコール系、芳香族系のものを使用することができるが、中でもトルエン、酢酸エチル、イソプロピルアルコール、ベンゼンメチルセロソルブ、エチルセロソルブ、アセトン、メチルエチルケトンなどの、一般にアクリル系ポリマーの良溶媒で、沸点６０〜１２０℃の溶剤が好ましく、重合開始剤としては、α，α’−アゾビスイソブチルニトリルなどのアゾビス系、ベンゾイルペルオキシドなどの有機過酸化物系などのラジカル発生剤を通常用いる。この際、必要に応じて触媒、重合禁止剤を併用することができ、重合温度および重合時間を調節することにより、所望の分子量の化合物（Ａ）を得ることができる。また、分子量を調節することに関しては、メルカプタン、四塩化炭素系の溶剤を用いることが好ましい。なお、この反応は溶液重合に限定されるものではなく、塊状重合、懸濁重合など別の方法でもさしつかえない。   In the synthesis of the above compound (A), as the organic solvent when the reaction is carried out by solution polymerization, ketone, ester, alcohol, and aromatic solvents can be used, among which toluene, ethyl acetate , Isopropyl alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, etc., are generally good solvents for acrylic polymers, preferably having a boiling point of 60 to 120 ° C., and α, α′-azobisisobutyl as a polymerization initiator A radical generator such as an azobis type such as nitrile or an organic peroxide type such as benzoyl peroxide is usually used. At this time, a catalyst and a polymerization inhibitor can be used together as necessary, and the compound (A) having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time. In terms of adjusting the molecular weight, it is preferable to use a mercaptan or carbon tetrachloride solvent. This reaction is not limited to solution polymerization, and other methods such as bulk polymerization and suspension polymerization may be used.

以上のようにして、化合物（Ａ）を得ることができるが、本発明において、化合物（Ａ）の分子量は、３０万〜１００万程度が好ましい。３０万未満では、放射線照射による凝集力が小さくなって、ウエハをダイシングする時に、素子のずれが生じやすくなり、画像認識が困難となることがある。この素子のずれを、極力防止するためには、分子量が、４０万以上である方が好ましい。また、分子量が１００万を越えると、合成時および塗工時にゲル化する可能性がある。
なお、本発明における分子量とは、ポリスチレン換算の質量平均分子量である。 As described above, the compound (A) can be obtained. In the present invention, the molecular weight of the compound (A) is preferably about 300,000 to 1,000,000. If it is less than 300,000, the cohesive force due to radiation irradiation becomes small, and when the wafer is diced, the device is likely to be displaced, and image recognition may be difficult. In order to prevent the deviation of the element as much as possible, the molecular weight is preferably 400,000 or more. Further, if the molecular weight exceeds 1,000,000, there is a possibility of gelation at the time of synthesis and coating.
In addition, the molecular weight in this invention is a mass mean molecular weight of polystyrene conversion.

なお、化合物（Ａ）が、水酸基価５〜１００となるＯＨ基を有すると、放射線照射後の粘着力を減少することによりピックアップミスの危険性をさらに低減することができるので好ましい。また、化合物（Ａ）が、酸価０．５〜３０となるＣＯＯＨ基を有することが好ましい。
ここで、化合物（Ａ）の水酸基価が低すぎると、放射線照射後の粘着力の低減効果が十分でなく、高すぎると、放射線照射後の粘着剤の流動性を損なう傾向がある。また酸価が低すぎると、テープ復元性の改善効果が十分でなく、高すぎると粘着剤の流動性を損なう傾向がある。 In addition, it is preferable that the compound (A) has an OH group having a hydroxyl value of 5 to 100 because the risk of pick-up mistakes can be further reduced by reducing the adhesive strength after radiation irradiation. Moreover, it is preferable that a compound (A) has a COOH group used as the acid value of 0.5-30.
Here, if the hydroxyl value of the compound (A) is too low, the effect of reducing the adhesive strength after irradiation is not sufficient, and if it is too high, the fluidity of the adhesive after irradiation tends to be impaired. If the acid value is too low, the effect of improving the tape restoring property is not sufficient, and if it is too high, the fluidity of the pressure-sensitive adhesive tends to be impaired.

つぎに、粘着剤層のもう１つの主成分である化合物（Ｂ）について説明する。化合物（Ｂ）は、ポリイソシアネート類、メラミン・ホルムアルデヒド樹脂、およびエポキシ樹脂から選ばれる化合物であり、単独で又は２種類以上を組み合わせて使用することができる。この化合物（Ｂ）は架橋剤として働き、化合物（Ａ）または基材フィルムと反応した結果できる架橋構造により、化合物（Ａ）および（Ｂ）を主成分とした粘着剤の凝集力を、粘着剤塗布後に向上することができる。   Next, the compound (B) which is another main component of the pressure-sensitive adhesive layer will be described. The compound (B) is a compound selected from polyisocyanates, melamine / formaldehyde resins, and epoxy resins, and can be used alone or in combination of two or more. This compound (B) acts as a cross-linking agent, and the cross-linking structure formed as a result of reacting with the compound (A) or the base film causes the cohesive strength of the pressure-sensitive adhesive mainly composed of the compounds (A) and (B) to It can be improved after application.

ポリイソシアネート類としては、特に制限がなく、例えば、４，４’−ジフェニルメタンジイソシアネート、トリレンジイソシアネート、キシリレンジイソシアネート、４，４’−ジフェニルエーテルジイソシアネート、４，４’−〔２，２−ビス（４−フェノキシフェニル）プロパン〕ジイソシアネート等の芳香族イソシアネート、ヘキサメチレンジイソシアネート、２，２，４−トリメチル−ヘキサメチレンジイソシアネート、イソフォロンジイソシアネート、４，４’−ジシクロヘキシルメタンジイソシアネート、２，４’−ジシクロヘキシルメタンジイソシアネート、リジンジイソシアネート、リジントリイソシアネート等が挙げられる。を挙げることができ、具体的には、コロネートＬ（日本ポリウレタン株式会社製、商品名）等を用いることができる。   The polyisocyanates are not particularly limited, and examples thereof include 4,4′-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4′-diphenyl ether diisocyanate, 4,4 ′-[2,2-bis (4 -Phenoxyphenyl) propane] aromatic isocyanate such as diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate Lysine diisocyanate, lysine triisocyanate and the like. Specifically, Coronate L (manufactured by Nippon Polyurethane Co., Ltd., trade name) or the like can be used.

また、メラミン・ホルムアルデヒド樹脂としては、具体的には、ニカラックＭＸ−４５（三和ケミカル株式会社製、商品名）、メラン（日立化成工業株式会社製、商品名）等を用いることができる。
さらに、エポキシ樹脂としては、ＴＥＴＲＡＤ−Ｘ（三菱化学株式会社製、商品名）等を用いることができる。
本発明においては、特にポリイソシアネート類を用いることが好ましい。 Specific examples of the melamine / formaldehyde resin include Nicalac MX-45 (trade name, manufactured by Sanwa Chemical Co., Ltd.), Melan (trade name, manufactured by Hitachi Chemical Co., Ltd.), and the like.
Furthermore, as an epoxy resin, TETRAD-X (Mitsubishi Chemical Corporation make, brand name) etc. can be used.
In the present invention, it is particularly preferable to use polyisocyanates.

（Ｂ）の添加量としては、化合物（Ａ）１００質量部に対して０．１〜１０質量部、好ましくは０．４〜３質量部の割合となるよう、選択することが必要である。この範囲内で選択することにより、適切な凝集力とすることができ、急激に架橋反応が進行することないので、粘着剤の配合や塗布等の作業性が良好となる。   The addition amount of (B) needs to be selected so as to be a ratio of 0.1 to 10 parts by mass, preferably 0.4 to 3 parts by mass with respect to 100 parts by mass of the compound (A). By selecting within this range, it is possible to obtain an appropriate cohesive force, and since the crosslinking reaction does not proceed abruptly, workability such as blending and application of the adhesive is improved.

また、本発明において、粘着剤層１２ｂには、光重合開始剤（Ｃ）が含まれていることが好ましい。粘着剤層１２ｂの含まれる光重合開始剤（Ｃ）に特に制限はなく、従来知られているものを用いることができる。例えば、ベンゾフェノン、４，４’−ジメチルアミノベンゾフェノン、４，４’−ジエチルアミノベンゾフェノン、４，４’−ジクロロベンゾフェノン等のベンゾフェノン類、アセトフェノン、ジエトキシアセトフェノン等のアセトフェノン類、２−エチルアントラキノン、ｔ−ブチルアントラキノン等のアントラキノン類、２−クロロチオキサントン、ベンゾインエチルエーテル、ベンゾインイソプロピルエーテル、ベンジル、２，４，５−トリアリ−ルイミダゾール二量体（ロフィン二量体）、アクリジン系化合物等を挙げることができ、これらは単独で又は２種以上を組み合わせて用いることができる。   Moreover, in this invention, it is preferable that the photoinitiator (C) is contained in the adhesive layer 12b. There is no restriction | limiting in particular in the photoinitiator (C) in which the adhesive layer 12b is contained, A conventionally well-known thing can be used. For example, benzophenones such as benzophenone, 4,4′-dimethylaminobenzophenone, 4,4′-diethylaminobenzophenone and 4,4′-dichlorobenzophenone, acetophenones such as acetophenone and diethoxyacetophenone, 2-ethylanthraquinone, t- Examples include anthraquinones such as butylanthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triallylimidazole dimer (rophine dimer), and acridine compounds. These can be used alone or in combination of two or more.

（Ｃ）の添加量としては、化合物（Ａ）１００質量部に対して０．１〜１０質量部とすることが好ましく、０．５〜５質量部とすることがより好ましい。   As addition amount of (C), it is preferable to set it as 0.1-10 mass parts with respect to 100 mass parts of compounds (A), and it is more preferable to set it as 0.5-5 mass parts.

さらに本発明に用いられる放射線硬化性の粘着剤には必要に応じて粘着付与剤、粘着調整剤、界面活性剤など、あるいはその他の改質剤等を配合することができる。また、無機化合物フィラーを適宜加えてもよい。
粘着剤層の厚さは少なくとも５μｍ、より好ましくは１０μｍ以上であることが好ましい。なお、粘着剤層は複数の層が積層された構成であってもよい。 Furthermore, the radiation-curable pressure-sensitive adhesive used in the present invention can be blended with a tackifier, a pressure-adjusting agent, a surfactant, or other modifiers as necessary. Moreover, you may add an inorganic compound filler suitably.
The thickness of the pressure-sensitive adhesive layer is preferably at least 5 μm, more preferably 10 μm or more. The pressure-sensitive adhesive layer may have a structure in which a plurality of layers are laminated.

次に、本発明の実施例について説明するが、本発明はこれら実施例に限定されるものではない。
（１）粘着テープの作製
（粘着テープＡ）
有機溶剤に溶解したアクリル系放射線硬化性粘着剤組成物を、ポリオレフィンフィルムＡに乾燥膜厚が１０μｍとなるように塗布し、１１０℃で３分間乾燥し、粘着テープAを調製した。 Next, examples of the present invention will be described, but the present invention is not limited to these examples.
(1) Preparation of adhesive tape (adhesive tape A)
An acrylic radiation-curable pressure-sensitive adhesive composition dissolved in an organic solvent was applied to the polyolefin film A so that the dry film thickness was 10 μm, and dried at 110 ° C. for 3 minutes to prepare a pressure-sensitive adhesive tape A.

（粘着テープＢ）
同様のアクリル系放射線硬化性粘着剤組成物を、ポリオレフィンフィルムＢに乾燥膜厚が１０μｍとなるように塗布し、１１０℃で３分間乾燥し、粘着テープＢを調製した。 (Adhesive tape B)
The same acrylic radiation-curable pressure-sensitive adhesive composition was applied to the polyolefin film B so that the dry film thickness was 10 μm, and dried at 110 ° C. for 3 minutes to prepare a pressure-sensitive adhesive tape B.

（粘着テープＣ）
同様のアクリル系放射線硬化性粘着剤組成物を、ポリオレフィンフィルムＣに乾燥膜厚が１０μｍとなるように塗布し、１１０℃で３分間乾燥し、粘着テープＣを調製した。 (Adhesive tape C)
The same acrylic radiation-curable pressure-sensitive adhesive composition was applied to the polyolefin film C so that the dry film thickness was 10 μm, and dried at 110 ° C. for 3 minutes to prepare a pressure-sensitive adhesive tape C.

（２）接着フィルムの作製
（接着フィルムａ）
有機溶剤に溶解したエポキシ−アクリル系接着剤を離型処理したポリエチレンテレフタレートフィルム上に塗布し、１１０℃で１分間加熱乾燥して、膜厚が４０μｍのＢステージ状態の接着フィルムaを調製した。 (2) Production of adhesive film (adhesive film a)
An epoxy-acrylic adhesive dissolved in an organic solvent was applied onto a release-treated polyethylene terephthalate film and dried by heating at 110 ° C. for 1 minute to prepare a B-staged adhesive film a having a thickness of 40 μm.

（接着フィルムｂ）
有機溶剤に溶解したエポキシ−アクリル系接着剤(接着フィルムａとはエポキシ樹脂とアクリル樹脂の配合比が異なる)を離型処理したポリエチレンテレフタレートフィルム上に塗布し、１１０℃で１分間加熱乾燥して、膜厚が４０μｍのＢステージ状態の接着フィルムbを調製した。 (Adhesive film b)
An epoxy-acrylic adhesive dissolved in an organic solvent (the adhesive film a has a different blending ratio of epoxy resin and acrylic resin) is applied onto a release-treated polyethylene terephthalate film, and heated and dried at 110 ° C. for 1 minute. A B-stage adhesive film b having a film thickness of 40 μm was prepared.

（接着フィルムｃ）
有機溶剤に溶解したエポキシ−アクリル系接着剤(接着フィルムａ、ｂとはエポキシ樹脂とアクリル樹脂の配合比が異なる)を離型処理したポリエチレンテレフタレートフィルム上に塗布し、１１０℃で１分間加熱乾燥して、膜厚が４０μｍのＢステージ状態の接着フィルムcを調製した。 (Adhesive film c)
An epoxy-acrylic adhesive dissolved in an organic solvent (adhesive films a and b differ in the compounding ratio of epoxy resin and acrylic resin) is applied onto a release-treated polyethylene terephthalate film and dried at 110 ° C. for 1 minute. Then, an adhesive film c in a B stage state having a film thickness of 40 μm was prepared.

＜特性評価＞
各粘着テープの伸び率１０％での引張荷重、及び各接着フィルムの破断荷重の測定を、以下の条件にて行った。結果を表１に示す。 <Characteristic evaluation>
Measurement of the tensile load at 10% elongation of each adhesive tape and the breaking load of each adhesive film were performed under the following conditions. The results are shown in Table 1.

（粘着テープの伸び率１０％での引張荷重）
測定温度及び湿度：２５℃、６０％
試験片の幅：２５ｍｍ
試験片の標線間距離：１００ｍｍ
つかみ具間距離：１００ｍｍ
引張速度：３００ｍｍ／ｍｉｎ
測定装置：ストログラフ (東洋精機) (Tensile load at 10% elongation of adhesive tape)
Measurement temperature and humidity: 25 ° C, 60%
Specimen width: 25 mm
Distance between marked lines of test piece: 100 mm
Distance between grips: 100mm
Tensile speed: 300 mm / min
Measuring device: Strograph (Toyo Seiki)

（接着フィルムの、破断荷重）
測定温度及び湿度：２５℃、６０％
試験片の幅：１０ｍｍ
試験片の標線間距離：４０ｍｍ
引張速度：３００ｍｍ／ｍｉｎ
測定装置： ストログラフ (東洋精機) (Breaking load of adhesive film)
Measurement temperature and humidity: 25 ° C, 60%
Specimen width: 10 mm
Distance between marked lines of test piece: 40 mm
Tensile speed: 300 mm / min
Measuring device: Strograph (Toyo Seiki)

（実施例１）
粘着テープＡ及び接着フィルムａを、それぞれ直径３７０ｍｍ、３３５ｍｍの円形にカットし、粘着テープＡの粘着剤層と接着フィルムａとを貼り合わせ、表１に示す直径比を有する実施例１のウエハ加工用フィルムを作製した。 Example 1
The adhesive tape A and the adhesive film a are cut into circles having diameters of 370 mm and 335 mm, respectively, the adhesive layer of the adhesive tape A and the adhesive film a are bonded together, and wafer processing of Example 1 having the diameter ratio shown in Table 1 is performed. A film was prepared.

（実施例２）
実施例１の粘着テープＡを、粘着テープＢに代えた以外は、実施例１と同様にして実施例２のウエハ加工用フィルムを作製した。 (Example 2)
A wafer processing film of Example 2 was produced in the same manner as in Example 1 except that the adhesive tape A of Example 1 was replaced with the adhesive tape B.

（実施例３）
実施例１の粘着テープＡを、粘着テープＣに代えた以外は、実施例１と同様にして実施例３のウエハ加工用フィルムを作製した。 (Example 3)
A wafer processing film of Example 3 was produced in the same manner as in Example 1 except that the adhesive tape A of Example 1 was replaced with the adhesive tape C.

（実施例４）
実施例１の接着フィルムａを、接着フィルムｂに代えた以外は、実施例１と同様にして実施例４のウエハ加工用フィルムを作製した。 Example 4
A wafer processing film of Example 4 was produced in the same manner as in Example 1 except that the adhesive film a of Example 1 was replaced with the adhesive film b.

（実施例５）
実施例１の接着フィルムａを、接着フィルムｃに代えた以外は、実施例１と同様にして実施例５のウエハ加工用フィルムを作製した。 (Example 5)
A wafer processing film of Example 5 was produced in the same manner as in Example 1 except that the adhesive film a in Example 1 was replaced with the adhesive film c.

（実施例６）
実施例１の接着フィルムａの直径を、粘着テープＡの直径と同じ３７０ｍｍに代えた以外は、実施例１と同様にして実施例６のウエハ加工用フィルムを作製した。 (Example 6)
A wafer processing film of Example 6 was produced in the same manner as in Example 1 except that the diameter of the adhesive film a of Example 1 was changed to 370 mm, which was the same as the diameter of the adhesive tape A.

（比較例１）
実施例１の接着フィルムａの直径を、３００ｍｍに代えた以外は、実施例１と同様にして比較例１のウエハ加工用フィルムを作製した。 (Comparative Example 1)
A wafer processing film of Comparative Example 1 was produced in the same manner as in Example 1 except that the diameter of the adhesive film a of Example 1 was changed to 300 mm.

＜接着フィルムの分断性試験＞
まず、半導体ウエハ（厚さ５０μｍ、径３００ｍｍ）に、レーザー光を照射し、ウエハ内部に改質領域を形成した。レーザー照射後の半導体ウエハ及びステンレス製のリングフレームに、実施例１〜６及び比較例１のウエハ加工用フィルムをラミネートした。次に、ウエハ加工用フィルムの外周部に、内径３３０ｍｍの樹脂製のエキスパンドリングを貼り付け、エキスパンド装置によりリングを固定し、半導体ウエハ加工用フィルムを以下のエキスパンド条件にてエキスパンドした。
エキスパンド速度：１００ｍｍ／ｓｅｃ
エキスパンド量：１５ｍｍ
その後、半導体ウエハ加工用フィルムに紫外線を照射し、粘着テープの粘着剤層を硬化させ、粘着力を低下させた。 <Schedulability test of adhesive film>
First, a semiconductor wafer (thickness 50 μm, diameter 300 mm) was irradiated with a laser beam to form a modified region inside the wafer. The wafer processing films of Examples 1 to 6 and Comparative Example 1 were laminated to the semiconductor wafer after laser irradiation and the stainless steel ring frame. Next, a resin expanding ring having an inner diameter of 330 mm was attached to the outer peripheral portion of the wafer processing film, the ring was fixed by an expanding device, and the semiconductor wafer processing film was expanded under the following expanding conditions.
Expanding speed: 100mm / sec
Expanding amount: 15mm
Thereafter, the semiconductor wafer processing film was irradiated with ultraviolet rays to cure the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape, thereby reducing the adhesive strength.

＜接着フィルムの分断性の評価方法＞
エキスパンド後に、半導体ウエハとともに接着フィルムが分断されたか否かを光学顕微鏡で観察した。結果を表１に示す。表1に示す分断性は、総チップ数に対する、良好に分断された接着フィルムの数をパーセンテージで表したものである。なお、レーザー加工後の総チップ数は、約４００個であり、チップサイズは１０ｍｍ×１０ｍｍである。 <Evaluation method for adhesive film fragmentation>
After the expansion, it was observed with an optical microscope whether or not the adhesive film was cut together with the semiconductor wafer. The results are shown in Table 1. The severability shown in Table 1 is the percentage of the number of adhesive films that were successfully severed with respect to the total number of chips. The total number of chips after laser processing is about 400, and the chip size is 10 mm × 10 mm.

＜チップ端面からの接着フィルムはみ出し評価＞
分断されたチップをピックアップし、チップと接着フィルムの端面を観察し、接着フィルムのはみ出しの有無を調べた。結果を表１に示す。 <Evaluation of protruding adhesive film from chip end face>
The divided chip was picked up, the end surfaces of the chip and the adhesive film were observed, and the presence or absence of the adhesive film was examined. The results are shown in Table 1.

Figure 2009094127
Figure 2009094127

表１の結果より、接着フィルムの粘着テープに対する直径比が本発明の範囲を満たす実施例１〜６のウエハ加工用フィルムは、比較例１のウエハ加工用フィルムと比較して、接着フィルムの分断性に優れることが確認された。特に、粘着テープの伸び率１０％での引張荷重が１０Ｎ以上であり、且つ、接着フィルムの破断伸び荷重が１０以下である実施例１，２，４，６のウエハ加工用フィルムについては、接着フィルムの分断性１００％が達成された。これに対し、これらの特性のいずれかを満たさない実施例３，５のウエハ加工用フィルムについては、若干、接着フィルムの分断性に劣るとともに、チップ端面からの接着フィルムのはみ出しが観察された。これらのことから、粘着テープ及び接着フィルムの特性が本発明の好ましい範囲を満たす場合に、より効果的に接着フィルムの分断性を向上できるとともに、接着フィルムのはみ出しの抑制にも効果的であることがわかる。なお、実施例２のウエハ加工用フィルムについては、接着フィルムの分断性１００％を達成しているものの、粘着テープの引張荷重が本発明の好ましい範囲の下限値（１０Ｎ）を示すことから、チップ端面からの接着フィルムのはみ出しが若干観察された。   From the results in Table 1, the film for wafer processing of Examples 1 to 6 in which the diameter ratio of the adhesive film to the adhesive tape satisfies the scope of the present invention is divided as compared with the film for wafer processing of Comparative Example 1. It was confirmed that it was excellent in performance. In particular, for the films for wafer processing of Examples 1, 2, 4, and 6 in which the tensile load at 10% elongation of the adhesive tape is 10 N or more and the breaking elongation load of the adhesive film is 10 or less, A film breakability of 100% was achieved. On the other hand, the wafer processing films of Examples 3 and 5 that did not satisfy any of these characteristics were slightly inferior to the adhesive film, and the protrusion of the adhesive film from the chip end face was observed. From these facts, when the properties of the pressure-sensitive adhesive tape and the adhesive film satisfy the preferred range of the present invention, the adhesive film can be more effectively improved in the breakability and also effective in suppressing the protrusion of the adhesive film. I understand. In addition, about the film for wafer processing of Example 2, although the division | segmentation property of an adhesive film is achieved 100%, since the tensile load of an adhesive tape shows the lower limit (10N) of the preferable range of this invention, it is a chip | tip. Some protrusion of the adhesive film from the end face was observed.

本発明の実施形態に係る半導体ウエハ加工用フィルムの平面図である。It is a top view of the film for semiconductor wafer processing concerning the embodiment of the present invention. 本発明の実施形態に係る半導体ウエハ加工用フィルムに、半導体ウエハとエキスパンド用リングフレームが貼り合わされた状態を示す断面図である。It is sectional drawing which shows the state by which the semiconductor wafer and the expand ring frame were bonded together to the film for semiconductor wafer processing which concerns on embodiment of this invention. レーザー加工により半導体ウエハに改質領域が形成された様子を示す断面図である。It is sectional drawing which shows a mode that the modification | reformation area | region was formed in the semiconductor wafer by laser processing. （ａ）は、半導体ウエハが貼り合わされた半導体ウエハ加工用フィルムが、エキスパンド装置に搭載された状態を示す断面図である。 （ｂ）は、エキスパンド後の半導体ウエハ加工用フィルムと半導体ウエハを示す断面図である。(A) is sectional drawing which shows the state in which the film for semiconductor wafer processing with which the semiconductor wafer was bonded together was mounted in the expand apparatus. (B) is sectional drawing which shows the film for semiconductor wafer processing after expansion, and a semiconductor wafer. 従来の半導体ウエハ加工用フィルムの平面図である。It is a top view of the conventional film for semiconductor wafer processing. 従来の半導体ウエハ加工用フィルムに、半導体ウエハとダイシング用リングフレームが貼り合わされた状態を示す断面図である。It is sectional drawing which shows the state by which the semiconductor wafer and the ring frame for dicing were bonded together to the conventional film for semiconductor wafer processing.

符号の説明Explanation of symbols

１０：半導体ウエハ加工用テープ
１１：接着フィルム
１２：粘着テープ
２０：エキスパンド用リングフレーム
２１：ステージ
２２：突き上げ部材 10: Semiconductor wafer processing tape 11: Adhesive film 12: Adhesive tape 20: Expanding ring frame 21: Stage 22: Push-up member

Claims (5)

半導体ウエハに接着した状態でエキスパンドされることにより、半導体ウエハとともにチップサイズに分断される略円形の接着フィルムと、
前記接着フィルムの半導体ウエハに接着される面とは反対の面に貼り合わされた略円形の粘着テープと
を有する積層構造の加工用フィルムであって、
前記接着フィルムの前記粘着テープに対する直径比が、０．８１５〜１の範囲であることを特徴とする半導体ウエハ加工用フィルム。 A substantially circular adhesive film that is divided into chip sizes together with the semiconductor wafer by being expanded in a state of being bonded to the semiconductor wafer;
A film for processing a laminated structure having a substantially circular adhesive tape bonded to a surface opposite to the surface to be bonded to the semiconductor wafer of the adhesive film,
The diameter ratio of the said adhesive film with respect to the said adhesive tape is the range of 0.815-1, The film for semiconductor wafer processing characterized by the above-mentioned. 前記半導体ウエハ加工用フィルムは、
（ａ）半導体ウエハの分割予定部分に予めレーザー光を照射して、該ウエハの内部に多光子吸収による改質領域を形成する工程と、
（ｂ）前記半導体ウエハに前記半導体ウエハ加工用フィルムを貼り付ける工程と
を順序不同に含み、さらに、
（ｃ）前記半導体ウエハ加工用フィルムをエキスパンドし、前記半導体ウエハ及び接着フィルムを分割予定ラインに沿って分断することにより、複数の接着フィルム付き半導体チップを得る工程と
を含む半導体装置の製造方法に使用されることを特徴とする請求項１に記載の半導体ウエハ加工用フィルム。 The semiconductor wafer processing film is
(A) irradiating a laser beam to a part to be divided of a semiconductor wafer in advance, and forming a modified region by multiphoton absorption inside the wafer;
(B) including, in random order, attaching the semiconductor wafer processing film to the semiconductor wafer;
(C) expanding the film for processing a semiconductor wafer, and dividing the semiconductor wafer and the adhesive film along a predetermined dividing line to obtain a plurality of semiconductor chips with an adhesive film. The film for processing a semiconductor wafer according to claim 1, wherein the film is used. 前記粘着テープは、エキスパンド時に使用するリングフレームの内径と同じか又はそれ以上の直径を有することを特徴とする請求項１又は２に記載の半導体ウエハ加工用フィルム。   The film for processing a semiconductor wafer according to claim 1 or 2, wherein the adhesive tape has a diameter equal to or larger than an inner diameter of a ring frame used during expansion. 前記粘着テープは、以下の条件下で引張試験を行ったときに、テープ伸び率１０％での引張荷重が１０Ｎ以上であることを特徴とする請求項１から請求項３のいずれか１項に記載の半導体ウエハ加工用フィルム。
試験片の幅：２５ｍｍ
試験片の標線間距離：１００ｍｍ
つかみ具間距離：１００ｍｍ
引張速度：３００ｍｍ／ｍｉｎ 4. The adhesive tape according to claim 1, wherein the adhesive tape has a tensile load of 10 N or more at a tape elongation of 10% when a tensile test is performed under the following conditions. The film for semiconductor wafer processing as described.
Specimen width: 25 mm
Distance between marked lines of test piece: 100 mm
Distance between grips: 100mm
Tensile speed: 300 mm / min 前記接着フィルムは、以下の条件下で引張試験を行ったときに、破断荷重が１０Ｎ以下であることを特徴とする請求項１から請求項４のいずれか１項に記載の半導体ウエハ加工用フィルム。
試験片の幅：１０ｍｍ
試験片の標線間距離：４０ｍｍ
引張速度：３００ｍｍ／ｍｉｎ
The film for processing a semiconductor wafer according to any one of claims 1 to 4, wherein the adhesive film has a breaking load of 10 N or less when a tensile test is performed under the following conditions. .
Specimen width: 10mm
Distance between marked lines of test piece: 40 mm
Tensile speed: 300 mm / min
JP2007260829A 2007-10-04 2007-10-04 Film for processing semiconductor wafer Pending JP2009094127A (en)

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