KR100856209B1 - 집적회로가 내장된 인쇄회로기판 및 그 제조방법 - Google Patents
집적회로가 내장된 인쇄회로기판 및 그 제조방법 Download PDFInfo
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- KR100856209B1 KR100856209B1 KR1020070043755A KR20070043755A KR100856209B1 KR 100856209 B1 KR100856209 B1 KR 100856209B1 KR 1020070043755 A KR1020070043755 A KR 1020070043755A KR 20070043755 A KR20070043755 A KR 20070043755A KR 100856209 B1 KR100856209 B1 KR 100856209B1
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- Prior art keywords
- insulating layer
- integrated circuit
- conductive pattern
- layer
- pattern layer
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Abstract
Description
Claims (11)
- 절연층과 도전성 패턴층이 교대로 반복하여 적층되고, 복수의 상기 절연층에는 콘택홀이 형성되어 상기 콘택홀을 통해 전기접속되는 다층 인쇄회로기판에 있어서,상기 다층 인쇄회로기판에 내장되도록 상기 복수의 절연층 중 어느 하나의 제1 절연층 내에 배치되며, 그 상면에 전기접속을 위한 복수의 접속단자를 구비하는 제1 집적회로와;상기 제1 집적회로의 하면에 적층되며, 그 상면에 전기접속을 위한 복수의 접속단자를 구비하는 제2 집적회로를 포함하며,상기 제1 절연층은 코어 절연층임을 특징으로 하는 다층 인쇄회로기판.
- 제 1 항에 있어서, 상기 제1 집적회로의 상기 하면과 상기 제2 집적회로의 하면 사이에 배치된 도전성 패턴층을 더 포함함을 특징으로 하는 다층 인쇄회로기판.
- 삭제
- 제1 절연층의 상면 및 하면에 제1 및 제2 도전성 패턴층을 형성하는 과정과;예정된 제1 집적회로 수용 영역의 상기 제1 도전성 패턴층 및 상기 제1 절연층을 제거하여 상기 제1 절연층에 상기 제1 집적회로를 수용하기 위한 제1 홀을 형성하는 과정과;상기 제1 집적회로의 하면이 상기 제2 도전성 패턴층과 접촉하도록 상기 제1 홀에 상기 제1 집적회로를 배치하는 과정과;상기 제1 도전성 패턴층 및 상기 제1 집적회로의 상면에 제2 절연층과 제3 도전성 패턴층을 적층하는 과정과;예정된 제2 집적회로 수용 영역의 상기 제2 도전성 패턴층에 접착 테이프를 부착하는 과정과;상기 접착 테이프를 포함하는 상기 제2 도전성 패턴층 위에 제3 절연층과 제4 도전성 패턴층을 적층하는 과정과;상기 접착 테이프의 테두리를 따라 상기 제4 도전성 패턴층과 상기 제3 절연층을 커팅하는 과정과;상기 접착 테이프와 상기 접착 테이프 위에 형성된 제3 절연층 및 제4 도전성 패턴층을 제거하여 상기 제3 절연층에 상기 제2 집적회로를 수용하기 위한 제2 홀을 형성하는 과정과;상기 제2 집적회로의 하면이 상기 제2 도전성 패턴층과 접촉하도록 상기 제2 홀에 상기 제2 집적회로를 배치하는 과정과;상기 제4 도전성 패턴층 및 상기 제2 집적회로의 상면에 제4 절연층과 제5 도전성 패턴층을 적층하는 과정과;상기 제2 절연층과 상기 제 4 절연층에 층간 전기접속을 위한 복수의 콘택홀을 형성하는 과정을 포함함을 특징으로 하는 다층 인쇄회로기판의 제조방법.
- 제 4 항에 있어서, 상기 제1 절연층은코어 절연층임을 특징으로 하는 다층 인쇄회로기판의 제조방법.
- 제 5 항에 있어서, 상기 코어 절연층은 FR4 재질이고, 상기 제2 내지 제4 절연층은 ABF(ajinomoto build-up film) 재질임을 특징으로 하는 다층 인쇄회로기판의 제조방법.
- 제 4 항에 있어서, 상기 제2 절연층의 하부와 상기 제4 절연층의 상부에 제5 및 제6 절연층과 제6 및 제7 도전성 패턴층을 적층하는 과정과;상기 제5 절연층 상기 제 6 절연층에 층간 전기접속을 위한 복수의 콘택홀을 형성하는 과정을 더 포함함을 특징으로 하는 다층 인쇄회로기판의 제조방법.
- 제1 절연층의 상면에 제1 도전성 패턴층을 형성한 다음 예정된 제1 집적회로 수용 영역의 상기 제1 도전성 패턴층 및 상기 제1 절연층을 제거하여 상기 제1 절연층에 상기 제1 집적회로를 수용하기 위한 제1 홀을 형성하는 과정과;상기 제1 홀을 폐색하도록 상기 제1 절연층의 하면에 예정된 제2 집적회로 수용 영역 크기의 제1 접착 테이프를 부착하는 과정과;제1 집적회로의 하면이 상기 제1 접착 테이프에 부착되도록 상기 제1 홀에 상기 제1 집적회로를 배치하는 과정과;상기 제1 도전성 패턴층 및 상기 제1 집적회로의 상면에 제2 절연층과 제3 도전성 패턴층을 적층하는 과정과;상기 제1 접착 테이프를 포함하는 상기 제2 도전성 패턴층 위에 제3 절연층과 제3 도전성 패턴층을 적층하는 과정과;상기 접착 테이프의 테두리를 따라 상기 제3 도전성 패턴층과 상기 제2 절연층을 커팅하는 과정과;상기 제1 접착 테이프와 상기 제1 접착 테이프 위에 형성된 제3 절연층 및 제3 도전성 패턴층을 제거하여 상기 제3 절연층에 상기 제2 집적회로를 수용하기 위한 제2 홀을 형성하는 과정과;상기 제2 집적회로의 하면이 상기 제1 집적회로의 하면과 접촉하도록 상기 제2 홀에 상기 제2 집적회로를 배치하는 과정과;상기 제3 도전성 패턴층 및 상기 제2 집적회로의 상면에 제4 절연층과 제4 도전성 패턴층을 적층하는 과정과;상기 제2 절연층과 상기 제 4 절연층에 층간 전기접속을 위한 복수의 콘택홀을 형성하는 과정을 포함함을 특징으로 하는 다층 인쇄회로기판의 제조방법.
- 제 8 항에 있어서, 상기 제1 절연층은코어 절연층임을 특징으로 하는 다층 인쇄회로기판의 제조방법.
- 제 9 항에 있어서, 상기 코어 절연층은 FR4 재질이고, 상기 제2 내지 제4 절연층은 ABF(ajinomoto build-up film) 재질임을 특징으로 하는 다층 인쇄회로기판의 제조방법.
- 제 8 항에 있어서, 상기 제2 절연층의 하부와 상기 제4 절연층의 상부에 제5 및 제6 절연층과 제5 및 제6 도전성 패턴층을 적층하는 과정과;상기 제5 절연층과 상기 제 6 절연층에 층간 전기접속을 위한 복수의 콘택홀을 형성하는 과정을 더 포함함을 특징으로 하는 다층 인쇄회로기판의 제조방법.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100945285B1 (ko) | 2007-09-18 | 2010-03-03 | 삼성전기주식회사 | 전자소자 내장 인쇄회로기판 및 그 제조 방법 |
KR101484786B1 (ko) * | 2008-12-08 | 2015-01-21 | 삼성전자주식회사 | 집적회로 패키지 내장 인쇄회로기판 및 그 제조방법 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7727808B2 (en) * | 2008-06-13 | 2010-06-01 | General Electric Company | Ultra thin die electronic package |
FI122217B (fi) * | 2008-07-22 | 2011-10-14 | Imbera Electronics Oy | Monisirupaketti ja valmistusmenetelmä |
FI20095110A0 (fi) | 2009-02-06 | 2009-02-06 | Imbera Electronics Oy | Elektroniikkamoduuli, jossa on EMI-suoja |
JP5725152B2 (ja) * | 2011-03-10 | 2015-05-27 | 株式会社村田製作所 | 電気素子内蔵型多層基板およびその製造方法 |
JP5677499B2 (ja) * | 2013-04-11 | 2015-02-25 | 太陽誘電株式会社 | 高周波回路モジュール |
WO2014185204A1 (ja) * | 2013-05-14 | 2014-11-20 | 株式会社村田製作所 | 部品内蔵基板及び通信モジュール |
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US10504848B1 (en) | 2019-02-19 | 2019-12-10 | Faraday Semi, Inc. | Chip embedded integrated voltage regulator |
US11069624B2 (en) | 2019-04-17 | 2021-07-20 | Faraday Semi, Inc. | Electrical devices and methods of manufacture |
US11063516B1 (en) | 2020-07-29 | 2021-07-13 | Faraday Semi, Inc. | Power converters with bootstrap |
KR20220163053A (ko) | 2021-06-02 | 2022-12-09 | 삼성전자주식회사 | 반도체 패키지 |
KR20230049373A (ko) * | 2021-10-06 | 2023-04-13 | 삼성전기주식회사 | 회로기판 |
US11990839B2 (en) | 2022-06-21 | 2024-05-21 | Faraday Semi, Inc. | Power converters with large duty cycles |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10294563A (ja) | 1997-04-18 | 1998-11-04 | Hitachi Chem Co Ltd | マルチチップ実装法 |
JP2005310946A (ja) * | 2004-04-20 | 2005-11-04 | Shinko Electric Ind Co Ltd | 半導体装置 |
JP2006339466A (ja) * | 2005-06-03 | 2006-12-14 | Murata Mfg Co Ltd | 部品内蔵モジュールおよびその製造方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5227338A (en) * | 1990-04-30 | 1993-07-13 | International Business Machines Corporation | Three-dimensional memory card structure with internal direct chip attachment |
US5099309A (en) * | 1990-04-30 | 1992-03-24 | International Business Machines Corporation | Three-dimensional memory card structure with internal direct chip attachment |
US5831836A (en) * | 1992-01-30 | 1998-11-03 | Lsi Logic | Power plane for semiconductor device |
US5386342A (en) * | 1992-01-30 | 1995-01-31 | Lsi Logic Corporation | Rigid backplane formed from a moisture resistant insulative material used to protect a semiconductor device |
US5843808A (en) * | 1996-01-11 | 1998-12-01 | Asat, Limited | Structure and method for automated assembly of a tab grid array package |
US6171888B1 (en) * | 1996-03-08 | 2001-01-09 | Lsi Logic Corp. | Multi-layer tab tape having distinct signal, power and ground planes, semiconductor device assembly employing same, apparatus for and method of assembling same |
KR20070101408A (ko) * | 1999-09-02 | 2007-10-16 | 이비덴 가부시키가이샤 | 프린트배선판 및 프린트배선판의 제조방법 |
EP1990831A3 (en) * | 2000-02-25 | 2010-09-29 | Ibiden Co., Ltd. | Multilayer printed circuit board and multilayer printed circuit board manufacturing method |
US6825108B2 (en) * | 2002-02-01 | 2004-11-30 | Broadcom Corporation | Ball grid array package fabrication with IC die support structures |
US6770822B2 (en) * | 2002-02-22 | 2004-08-03 | Bridgewave Communications, Inc. | High frequency device packages and methods |
US7485489B2 (en) * | 2002-06-19 | 2009-02-03 | Bjoersell Sten | Electronics circuit manufacture |
DE10234951B4 (de) * | 2002-07-31 | 2009-01-02 | Qimonda Ag | Verfahren zur Herstellung von Halbleiterschaltungsmodulen |
JP4052955B2 (ja) * | 2003-02-06 | 2008-02-27 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP4298559B2 (ja) * | 2004-03-29 | 2009-07-22 | 新光電気工業株式会社 | 電子部品実装構造及びその製造方法 |
TWI229920B (en) * | 2004-04-12 | 2005-03-21 | Phoenix Prec Technology Corp | Electrical connection structure of embedded chip and method for fabricating the same |
FI20041680L (fi) * | 2004-04-27 | 2005-10-28 | Imbera Electronics Oy | Elektroniikkamoduuli ja menetelmä sen valmistamiseksi |
KR100619367B1 (ko) * | 2004-08-26 | 2006-09-08 | 삼성전기주식회사 | 고유전율을 갖는 커패시터를 내장한 인쇄회로기판 및 그제조 방법 |
US7615856B2 (en) * | 2004-09-01 | 2009-11-10 | Sanyo Electric Co., Ltd. | Integrated antenna type circuit apparatus |
TWI301660B (en) * | 2004-11-26 | 2008-10-01 | Phoenix Prec Technology Corp | Structure of embedding chip in substrate and method for fabricating the same |
TWI245384B (en) * | 2004-12-10 | 2005-12-11 | Phoenix Prec Technology Corp | Package structure with embedded chip and method for fabricating the same |
JP4880218B2 (ja) * | 2004-12-22 | 2012-02-22 | 三洋電機株式会社 | 回路装置 |
TWI245388B (en) * | 2005-01-06 | 2005-12-11 | Phoenix Prec Technology Corp | Three dimensional package structure of semiconductor chip embedded in substrate and method for fabricating the same |
US20060220167A1 (en) * | 2005-03-31 | 2006-10-05 | Intel Corporation | IC package with prefabricated film capacitor |
JP5164362B2 (ja) * | 2005-11-02 | 2013-03-21 | キヤノン株式会社 | 半導体内臓基板およびその製造方法 |
JP4826248B2 (ja) * | 2005-12-19 | 2011-11-30 | Tdk株式会社 | Ic内蔵基板の製造方法 |
US20070262441A1 (en) * | 2006-05-09 | 2007-11-15 | Chi-Ming Chen | Heat sink structure for embedded chips and method for fabricating the same |
US7505282B2 (en) * | 2006-10-31 | 2009-03-17 | Mutual-Tek Industries Co., Ltd. | Laminated bond of multilayer circuit board having embedded chips |
-
2007
- 2007-05-04 KR KR1020070043755A patent/KR100856209B1/ko active IP Right Grant
-
2008
- 2008-04-25 US US12/150,197 patent/US8629354B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10294563A (ja) | 1997-04-18 | 1998-11-04 | Hitachi Chem Co Ltd | マルチチップ実装法 |
JP2005310946A (ja) * | 2004-04-20 | 2005-11-04 | Shinko Electric Ind Co Ltd | 半導体装置 |
JP2006339466A (ja) * | 2005-06-03 | 2006-12-14 | Murata Mfg Co Ltd | 部品内蔵モジュールおよびその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100945285B1 (ko) | 2007-09-18 | 2010-03-03 | 삼성전기주식회사 | 전자소자 내장 인쇄회로기판 및 그 제조 방법 |
KR101484786B1 (ko) * | 2008-12-08 | 2015-01-21 | 삼성전자주식회사 | 집적회로 패키지 내장 인쇄회로기판 및 그 제조방법 |
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