KR100460063B1 - 센터 패드 칩 적층 볼 그리드 어레이 패키지 및 그 제조방법 - Google Patents
센터 패드 칩 적층 볼 그리드 어레이 패키지 및 그 제조방법 Download PDFInfo
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- KR100460063B1 KR100460063B1 KR10-2002-0024325A KR20020024325A KR100460063B1 KR 100460063 B1 KR100460063 B1 KR 100460063B1 KR 20020024325 A KR20020024325 A KR 20020024325A KR 100460063 B1 KR100460063 B1 KR 100460063B1
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- Prior art keywords
- circuit board
- chip
- package
- lower circuit
- ball grid
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 229910000679 solder Inorganic materials 0.000 claims abstract description 25
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 239000010931 gold Substances 0.000 claims abstract description 5
- 238000000465 moulding Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 238000003825 pressing Methods 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 6
- 239000011805 ball Substances 0.000 description 60
- 230000008569 process Effects 0.000 description 7
- 230000006870 function Effects 0.000 description 2
- 239000011806 microball Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Abstract
Description
Claims (9)
- 각각 칩 활성면의 중앙을 따라 형성된 칩 패드들을 포함하는 두 개의 센터 패드형 반도체 칩을 적층하여 구현한 미세 볼 그리드 어레이 패키지에 있어서,상기 반도체 칩들은 상기 칩 활성면이 서로 마주보도록 상하부 회로기판에 각각 접착되며, 상기 칩 패드들은 금 와이어를 통하여 상기 상하부 회로기판에 각각 전기적으로 연결되고, 상기 상하부 회로기판은 서로 접합되면서 그 사이에 형성된 범프를 통하여 전기적으로 통전되며, 상기 상부 회로기판은 패키지 몰드 안에 포함되고, 상기 하부 회로기판은 그 양쪽 끝 부분이 상기 패키지 몰드의 하부 쪽으로 노출되는 것을 특징으로 하는 센터 패드 칩 적층 볼 그리드 어레이 패키지.
- 제1항에 있어서, 상기 하부 회로기판은 유연성이 있는 절연 필름으로 이루어지는 것을 특징으로 하는 센터 패드 칩 적층 볼 그리드 어레이 패키지.
- 제2항에 있어서, 상기 하부 회로기판의 노출된 양쪽 끝 부분에는 솔더 볼들이 형성되는 것을 특징으로 하는 센터 패드 칩 적층 볼 그리드 어레이 패키지.
- 제2항에 있어서, 상기 하부 회로기판의 양쪽 끝 부분에는 인쇄회로기판이 접합되는 것을 특징으로 하는 센터 패드 칩 적층 볼 그리드 어레이 패키지.
- 제4항에 있어서, 상기 인쇄회로기판의 하부면에는 솔더 볼들이 형성되는 것을 특징으로 하는 센터 패드 칩 적층 볼 그리드 어레이 패키지.
- 각각 칩 활성면의 중앙을 따라 형성된 칩 패드들을 포함하는 두 개의 센터 패드형 반도체 칩을 적층하여 구현한 미세 볼 그리드 어레이 패키지에 있어서,상기 반도체 칩들은 상기 칩 활성면이 서로 마주보도록 회로기판과 리드 프레임에 각각 접착되며, 상기 칩 패드들은 금 와이어를 통하여 상기 회로기판 및 리드 프레임에 각각 전기적으로 연결되고, 상기 회로기판 및 리드 프레임은 서로 접합되면서 그 사이에 형성된 범프를 통하여 전기적으로 통전되며, 상기 회로기판 및 리드 프레임은 패키지 몰드 안에 포함되고, 상기 리드 프레임은 그 양쪽 끝 부분이 상기 패키지 몰드의 하부 쪽으로 노출되며, 상기 노출된 리드 프레임의 양쪽 끝 부분이 솔더 페이스트에 의해 외부기판과 연결되는 것을 특징으로 하는 센터 패드 칩 적층 볼 그리드 어레이 패키지.
- 각각 칩 활성면의 중앙을 따라 형성된 칩 패드들을 포함하는 두 개의 센터 패드형 반도체 칩을 적층하여 미세 볼 그리드 어레이 패키지를 제조하는 방법에 있어서,상기 칩 활성면이 서로 마주보도록 상기 반도체 칩들을 상하부 회로기판에 각각 접착하는 단계와, 금 와이어를 통하여 상기 칩 패드들을 상기 상하부 회로기판에 각각 전기적으로 연결하는 단계와, 범프를 통하여 전기적으로 통전되도록 상기 상하부 회로기판을 서로 접합하는 단계와, 상기 상부 회로기판이 패키지 몰드 안에 포함되고 상기 하부 회로기판이 양쪽 끝 부분에서 상기 패키지 몰드의 하부 쪽으로 노출되도록 상기 패키지 몰드를 형성하는 단계로 이루어지는 것을 특징으로 하는 센터 패드 칩 적층 볼 그리드 어레이 패키지의 제조 방법.
- 각각 칩 활성면의 중앙을 따라 형성된 칩 패드들을 포함하는 두 개의 센터 패드형 반도체 칩을 적층하여 미세 볼 그리드 어레이 패키지를 제조하는 방법에 있어서,각각 홀과 윈도우가 일정한 간격으로 형성되고, 기판 패드, 배선, 접속 패드가 일정한 패턴으로 형성되어, 다수개의 상하부 회로기판들을 형성하며, 상기 하부 회로기판의 상기 홀 내부에 상기 배선이 연장되어 볼 랜드가 형성되고, 상기 접속 패드에 범프가 형성되는 상하부 회로기판 스트립을 제공하는 단계와;상기 칩 패드들이 상기 윈도우를 통하여 노출되도록 상기 회로기판 스트립의 상기 각 회로기판마다 상기 반도체 칩을 접착하는 단계와;금 와이어에 의하여 상기 노출된 칩 패드들을 상기 기판 패드들에 전기적으로 연결하는 단계와;상기 반도체 칩이 서로 마주보도록 상기 상하부 회로기판을 서로 접착시켜 상기 범프에 의하여 상기 상하부 회로기판을 전기적으로 연결하는 단계와;상기 홀을 통하여 상기 하부 회로기판의 상기 볼 랜드를 눌러 상기 하부 회로기판의 상기 홀 안으로 연장된 배선이 아래쪽으로 휘어지도록 하면서 상기 볼 랜드를 노출시키는 패키지 몰드를 형성하는 단계와;상기 볼 랜드에 솔더 볼들을 형성하는 단계와;상기 회로기판 스트립으로부터 각각의 개별 패키지들을 분리하는 단계를 포함하는 센터 패드 칩 적층 볼 그리드 어레이 패키지의 제조 방법.
- 제8항에 있어서, 상기 패키지 몰드를 형성하는 단계는, 상기 각각의 회로기판이 몰딩 장치의 캐버티 안에 위치하도록 상기 상하부 회로기판 스트립을 상하부 몰딩 금형으로 구성된 상기 몰딩 장치 안에 제공하는 단계와, 상기 하부 회로기판의 상기 볼 랜드가 상기 하부 몰딩 금형에 닿도록 상기 상부 몰딩 금형에 형성된 가압부가 상기 회로기판 스트립의 상기 홀을 통하여 상기 볼 랜드를 누르는 단계와, 상기 몰딩 장치의 주입구를 통하여 액상 몰딩 수지를 상기 캐버티 안에 주입하고 경화시켜 상기 패키지 몰드를 형성하는 단계로 이루어지는 것을 특징으로 하는 센터 패드 칩 적층 볼 그리드 어레이 패키지의 제조 방법.
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KR10-2002-0024325A KR100460063B1 (ko) | 2002-05-03 | 2002-05-03 | 센터 패드 칩 적층 볼 그리드 어레이 패키지 및 그 제조방법 |
US10/331,004 US6841863B2 (en) | 2002-05-03 | 2002-12-27 | Ball grid array package with stacked center pad chips and method for manufacturing the same |
TW091137746A TWI234251B (en) | 2002-05-03 | 2002-12-27 | Ball grid array package with stacked center pad chips and method for manufacturing the same |
CNB031001602A CN100561737C (zh) | 2002-05-03 | 2003-01-03 | 中心焊点芯片的叠层球栅极阵列封装件及其制造方法 |
US10/892,417 US7115442B2 (en) | 2002-05-03 | 2004-07-15 | Ball grid array package with stacked center pad chips and method for manufacturing the same |
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KR10-2002-0024325A KR100460063B1 (ko) | 2002-05-03 | 2002-05-03 | 센터 패드 칩 적층 볼 그리드 어레이 패키지 및 그 제조방법 |
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Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100480909B1 (ko) * | 2001-12-29 | 2005-04-07 | 주식회사 하이닉스반도체 | 적층 칩 패키지의 제조 방법 |
DE10251530B4 (de) * | 2002-11-04 | 2005-03-03 | Infineon Technologies Ag | Stapelanordnung eines Speichermoduls |
SG143931A1 (en) | 2003-03-04 | 2008-07-29 | Micron Technology Inc | Microelectronic component assemblies employing lead frames having reduced-thickness inner lengths |
US7368810B2 (en) * | 2003-08-29 | 2008-05-06 | Micron Technology, Inc. | Invertible microfeature device packages |
KR100673950B1 (ko) * | 2004-02-20 | 2007-01-24 | 삼성테크윈 주식회사 | 이미지 센서 모듈과 이를 구비하는 카메라 모듈 패키지 |
TWI237882B (en) * | 2004-05-11 | 2005-08-11 | Via Tech Inc | Stacked multi-chip package |
TWM260864U (en) * | 2004-07-23 | 2005-04-01 | Fen Te Co Ltd | Transistor for stable chip mounting |
SG145547A1 (en) * | 2004-07-23 | 2008-09-29 | Micron Technology Inc | Microelectronic component assemblies with recessed wire bonds and methods of making same |
US7602618B2 (en) * | 2004-08-25 | 2009-10-13 | Micron Technology, Inc. | Methods and apparatuses for transferring heat from stacked microfeature devices |
US20060176638A1 (en) * | 2005-02-10 | 2006-08-10 | Fultec Semiconductors, Inc. | Minimized wire bonds in transient blocking unit packaging |
US7663232B2 (en) | 2006-03-07 | 2010-02-16 | Micron Technology, Inc. | Elongated fasteners for securing together electronic components and substrates, semiconductor device assemblies including such fasteners, and accompanying systems |
US8106491B2 (en) * | 2007-05-16 | 2012-01-31 | Micron Technology, Inc. | Methods of forming stacked semiconductor devices with a leadframe and associated assemblies |
KR101321947B1 (ko) * | 2007-09-20 | 2013-11-04 | 삼성전자주식회사 | 정전기 방전 보호회로를 구비하는 반도체 장치 및 이장치의 테스트 방법 |
US7923846B2 (en) * | 2007-11-16 | 2011-04-12 | Stats Chippac Ltd. | Integrated circuit package-in-package system with wire-in-film encapsulant |
JP5103245B2 (ja) * | 2008-03-31 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7687920B2 (en) * | 2008-04-11 | 2010-03-30 | Stats Chippac Ltd. | Integrated circuit package-on-package system with central bond wires |
US7829988B2 (en) * | 2008-09-22 | 2010-11-09 | Fairchild Semiconductor Corporation | Stacking quad pre-molded component packages, systems using the same, and methods of making the same |
US8222718B2 (en) * | 2009-02-05 | 2012-07-17 | Fairchild Semiconductor Corporation | Semiconductor die package and method for making the same |
US20110147910A1 (en) * | 2009-12-21 | 2011-06-23 | Micron Technology, Inc. | Method for stacking die in thin, small-outline package |
CN102468277A (zh) * | 2010-11-11 | 2012-05-23 | 三星半导体(中国)研究开发有限公司 | 多芯片层叠封装结构及其制造方法 |
US8823165B2 (en) | 2011-07-12 | 2014-09-02 | Invensas Corporation | Memory module in a package |
US8513817B2 (en) | 2011-07-12 | 2013-08-20 | Invensas Corporation | Memory module in a package |
US8502390B2 (en) | 2011-07-12 | 2013-08-06 | Tessera, Inc. | De-skewed multi-die packages |
US8405207B1 (en) | 2011-10-03 | 2013-03-26 | Invensas Corporation | Stub minimization for wirebond assemblies without windows |
US8917532B2 (en) | 2011-10-03 | 2014-12-23 | Invensas Corporation | Stub minimization with terminal grids offset from center of package |
US8659139B2 (en) | 2011-10-03 | 2014-02-25 | Invensas Corporation | Stub minimization using duplicate sets of signal terminals in assemblies without wirebonds to package substrate |
JP5947904B2 (ja) | 2011-10-03 | 2016-07-06 | インヴェンサス・コーポレイション | 直交するウインドウを有するマルチダイ・ワイヤボンド・アセンブリのためのスタブ最小化 |
US8441111B2 (en) | 2011-10-03 | 2013-05-14 | Invensas Corporation | Stub minimization for multi-die wirebond assemblies with parallel windows |
US8659141B2 (en) | 2011-10-03 | 2014-02-25 | Invensas Corporation | Stub minimization using duplicate sets of terminals for wirebond assemblies without windows |
US8525327B2 (en) * | 2011-10-03 | 2013-09-03 | Invensas Corporation | Stub minimization for assemblies without wirebonds to package substrate |
US8436457B2 (en) | 2011-10-03 | 2013-05-07 | Invensas Corporation | Stub minimization for multi-die wirebond assemblies with parallel windows |
KR101894823B1 (ko) | 2011-10-03 | 2018-09-04 | 인벤사스 코포레이션 | 평행한 윈도우를 갖는 다중-다이 와이어 본드 어셈블리를 위한 스터브 최소화 |
US8848392B2 (en) | 2012-08-27 | 2014-09-30 | Invensas Corporation | Co-support module and microelectronic assembly |
US8787034B2 (en) | 2012-08-27 | 2014-07-22 | Invensas Corporation | Co-support system and microelectronic assembly |
US8848391B2 (en) | 2012-08-27 | 2014-09-30 | Invensas Corporation | Co-support component and microelectronic assembly |
US9368477B2 (en) | 2012-08-27 | 2016-06-14 | Invensas Corporation | Co-support circuit panel and microelectronic packages |
US9070423B2 (en) | 2013-06-11 | 2015-06-30 | Invensas Corporation | Single package dual channel memory with co-support |
US9123555B2 (en) | 2013-10-25 | 2015-09-01 | Invensas Corporation | Co-support for XFD packaging |
KR20160006330A (ko) * | 2014-07-08 | 2016-01-19 | 삼성전자주식회사 | 반도체 패키지 |
US9392691B2 (en) | 2014-07-16 | 2016-07-12 | International Business Machines Corporation | Multi-stacked electronic device with defect-free solder connection |
US9281296B2 (en) | 2014-07-31 | 2016-03-08 | Invensas Corporation | Die stacking techniques in BGA memory package for small footprint CPU and memory motherboard design |
US9691437B2 (en) | 2014-09-25 | 2017-06-27 | Invensas Corporation | Compact microelectronic assembly having reduced spacing between controller and memory packages |
US9484080B1 (en) | 2015-11-09 | 2016-11-01 | Invensas Corporation | High-bandwidth memory application with controlled impedance loading |
US9679613B1 (en) | 2016-05-06 | 2017-06-13 | Invensas Corporation | TFD I/O partition for high-speed, high-density applications |
CN106876287A (zh) * | 2017-02-21 | 2017-06-20 | 深圳市江波龙科技有限公司 | 一种sip封装方法及一种sip模组 |
US11735506B2 (en) * | 2018-05-15 | 2023-08-22 | Texas Instruments Incorporated | Packages with multiple exposed pads |
KR102647423B1 (ko) * | 2019-03-04 | 2024-03-14 | 에스케이하이닉스 주식회사 | 와이어 본딩 연결 구조를 가지는 반도체 패키지 및 이를 포함하는 반도체 패키지 구조물 |
CN110600449A (zh) * | 2019-09-24 | 2019-12-20 | 唐丙旭 | 一种芯片封装结构及其封装方法 |
US11538739B2 (en) | 2020-04-21 | 2022-12-27 | Toyota Motor Engineering & Manufacturing North America, Inc. | Compact low inductance chip-on-chip power card |
CN112713164A (zh) * | 2021-01-05 | 2021-04-27 | 电子科技大学 | 一种三维集成电路及其制造方法 |
FR3128090B1 (fr) * | 2021-10-08 | 2024-08-16 | St Microelectronics Grenoble 2 | Dispositif électronique |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS634636A (ja) * | 1986-06-25 | 1988-01-09 | Hitachi Vlsi Eng Corp | 半導体装置 |
KR0144015B1 (ko) * | 1995-01-11 | 1998-07-01 | 문정환 | 반도체 소자의 패키지 장치 및 그 제조방법 |
KR19980022344A (ko) * | 1996-09-21 | 1998-07-06 | 황인길 | 적층형 bga 반도체패키지 |
KR19990051002A (ko) * | 1997-12-19 | 1999-07-05 | 구본준 | 적층형 패키지 및 그 제조방법 |
KR19990084443A (ko) * | 1998-05-06 | 1999-12-06 | 김영환 | 초고집적회로 비·엘·피 스택 및 그 제조방법 |
JP2000088921A (ja) * | 1998-09-08 | 2000-03-31 | Sony Corp | 半導体装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG52794A1 (en) * | 1990-04-26 | 1998-09-28 | Hitachi Ltd | Semiconductor device and method for manufacturing same |
KR100282526B1 (ko) * | 1999-01-20 | 2001-02-15 | 김영환 | 적층 반도체 패키지 및 그 제조방법, 그리고 그 적층 반도체 패키지를 제조하기 위한 패키지 얼라인용 치구 |
US6093969A (en) * | 1999-05-15 | 2000-07-25 | Lin; Paul T. | Face-to-face (FTF) stacked assembly of substrate-on-bare-chip (SOBC) modules |
US6387732B1 (en) * | 1999-06-18 | 2002-05-14 | Micron Technology, Inc. | Methods of attaching a semiconductor chip to a leadframe with a footprint of about the same size as the chip and packages formed thereby |
KR100297451B1 (ko) | 1999-07-06 | 2001-11-01 | 윤종용 | 반도체 패키지 및 그의 제조 방법 |
KR100324333B1 (ko) * | 2000-01-04 | 2002-02-16 | 박종섭 | 적층형 패키지 및 그 제조 방법 |
US6344401B1 (en) | 2000-03-09 | 2002-02-05 | Atmel Corporation | Method of forming a stacked-die integrated circuit chip package on a water level |
SG106054A1 (en) * | 2001-04-17 | 2004-09-30 | Micron Technology Inc | Method and apparatus for package reduction in stacked chip and board assemblies |
US6451626B1 (en) | 2001-07-27 | 2002-09-17 | Charles W.C. Lin | Three-dimensional stacked semiconductor package |
-
2002
- 2002-05-03 KR KR10-2002-0024325A patent/KR100460063B1/ko not_active IP Right Cessation
- 2002-12-27 US US10/331,004 patent/US6841863B2/en not_active Expired - Fee Related
- 2002-12-27 TW TW091137746A patent/TWI234251B/zh not_active IP Right Cessation
-
2003
- 2003-01-03 CN CNB031001602A patent/CN100561737C/zh not_active Expired - Fee Related
-
2004
- 2004-07-15 US US10/892,417 patent/US7115442B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS634636A (ja) * | 1986-06-25 | 1988-01-09 | Hitachi Vlsi Eng Corp | 半導体装置 |
KR0144015B1 (ko) * | 1995-01-11 | 1998-07-01 | 문정환 | 반도체 소자의 패키지 장치 및 그 제조방법 |
KR19980022344A (ko) * | 1996-09-21 | 1998-07-06 | 황인길 | 적층형 bga 반도체패키지 |
KR19990051002A (ko) * | 1997-12-19 | 1999-07-05 | 구본준 | 적층형 패키지 및 그 제조방법 |
KR19990084443A (ko) * | 1998-05-06 | 1999-12-06 | 김영환 | 초고집적회로 비·엘·피 스택 및 그 제조방법 |
JP2000088921A (ja) * | 1998-09-08 | 2000-03-31 | Sony Corp | 半導体装置 |
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US6841863B2 (en) | 2005-01-11 |
CN1455455A (zh) | 2003-11-12 |
US7115442B2 (en) | 2006-10-03 |
CN100561737C (zh) | 2009-11-18 |
TWI234251B (en) | 2005-06-11 |
US20040256443A1 (en) | 2004-12-23 |
TW200306652A (en) | 2003-11-16 |
US20030205801A1 (en) | 2003-11-06 |
KR20030085993A (ko) | 2003-11-07 |
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