KR100276495B1 - 상보형 금속 산화물 반도체(cmos) 기술의 집적 전자 회로용 극성 반전 보호 장치 - Google Patents
상보형 금속 산화물 반도체(cmos) 기술의 집적 전자 회로용 극성 반전 보호 장치 Download PDFInfo
- Publication number
- KR100276495B1 KR100276495B1 KR1019940025942A KR19940025942A KR100276495B1 KR 100276495 B1 KR100276495 B1 KR 100276495B1 KR 1019940025942 A KR1019940025942 A KR 1019940025942A KR 19940025942 A KR19940025942 A KR 19940025942A KR 100276495 B1 KR100276495 B1 KR 100276495B1
- Authority
- KR
- South Korea
- Prior art keywords
- well
- protection device
- resistor
- polarity inversion
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005516 engineering process Methods 0.000 title abstract description 6
- 239000004065 semiconductor Substances 0.000 title description 4
- 230000000295 complement effect Effects 0.000 title description 2
- 229910044991 metal oxide Inorganic materials 0.000 title description 2
- 150000004706 metal oxides Chemical class 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (6)
- 제1도전형의 기판(l)과, 하나의 주표면으로부터 상기 기판 안쪽으로 형성된 상기 제1도전형과 반대 도전형인 제2도전형의 웰(2)과, 상기 웰(2) 안쪽으로 형성된 상기 제1도전형의 소스 영역(5)과 드레인 영역(3)으로 구성된 CM0S 소자용 극성 반전 보호 장치에 있어서, 상기 소스 영역(5)은 저임피던스를 통해 양의 전원 전압(VDD)에 접속되고, 보호하고자 하는 회로에 대한 입력부는 상기 드레인 영역(3)에 위치하고, 상기 웰(2)은 극성 반전이 일어난 경우에 웰 전류가 최소치로 제한되게 하는 저항값을 갖는 저항(R)을 통해 상기 전원 전압(VDD)에 연결되는 것을 특징으로 하는 극성 반전 보호 장치.
- 제1항에 있어서, 상기 기판(1)은 p형 도핑된 것을 특징으로 하는 극성 반전 보호 장치.
- 제2항에 있어서, 상기 저항(R)은 드레인 잉역(3)의 부영역(51)으로 구현되고, 상기 소스 영역(5)과 부영역(51)으로 이루어진 전체 저항의 면적과 웰 영역의 면적의 비가 0.5 미만인 것을 특징으로 하는 극성 반전 보호 장치.
- 제2항에 있어서, 상기 저항(R)은 폴리실리콘으로 이루어진 것을 특징으로 하는 극성 반전 보호 장치.
- 제4항에 있어서, 2 이상의 웰(2)이 상기 저항(R)을 통해 상기 전원 전압(VDD)에 연결되는 것을 특징으로 하는 극성 반전 보호 장치.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 과전압 보호 소자가 웰 부분(6)의 접속부(7)를 통해 추가로 연결되어 있는 것을 특징으로 하는 극성 반전 보호 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4334515A DE4334515C1 (de) | 1993-10-09 | 1993-10-09 | Verpolungsschutz für integrierte elektronische Schaltkreise in CMOS-Technik |
DEP4334515.8 | 1993-10-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950012714A KR950012714A (ko) | 1995-05-16 |
KR100276495B1 true KR100276495B1 (ko) | 2000-12-15 |
Family
ID=6499816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940025942A Expired - Fee Related KR100276495B1 (ko) | 1993-10-09 | 1994-10-08 | 상보형 금속 산화물 반도체(cmos) 기술의 집적 전자 회로용 극성 반전 보호 장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5504361A (ko) |
EP (1) | EP0647970B1 (ko) |
JP (1) | JP3559075B2 (ko) |
KR (1) | KR100276495B1 (ko) |
CN (1) | CN1043388C (ko) |
DE (2) | DE4334515C1 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2576433B2 (ja) * | 1994-12-14 | 1997-01-29 | 日本電気株式会社 | 半導体装置用保護回路 |
JPH1079472A (ja) * | 1996-09-05 | 1998-03-24 | Mitsubishi Electric Corp | 半導体集積回路 |
DE19640272C2 (de) * | 1996-09-30 | 1998-07-23 | Siemens Ag | Verpolschutzschaltung für integrierte Schaltkreise |
US5847431A (en) * | 1997-12-18 | 1998-12-08 | Intel Corporation | Reduced capacitance transistor with electro-static discharge protection structure |
US6049112A (en) * | 1998-09-14 | 2000-04-11 | Intel Corporation | Reduced capacitance transistor with electro-static discharge protection structure and method for forming the same |
TW490907B (en) * | 2000-11-14 | 2002-06-11 | Silicon Touch Tech Inc | Circuit with protection for inverted connection of power source polarity |
JP5032378B2 (ja) * | 2008-03-31 | 2012-09-26 | セイコーインスツル株式会社 | 充放電制御回路及びバッテリ装置 |
US8964437B2 (en) | 2013-01-15 | 2015-02-24 | Keysight Technologies, Inc. | Energy dissipating device for DC power supplies |
DE102014017146A1 (de) | 2014-04-14 | 2015-10-15 | Elmos Semiconductor Aktiengesellschaft | Rail-to-Rail-Verpolschutz für den kombinierten Ein-/Ausgang eine integrierten CMOS Schaltkreises auf einem P-Substrat |
DE102015004235B4 (de) | 2014-04-14 | 2019-01-03 | Elmos Semiconductor Ag | Verfahren zum Schutz eines CMOS Schaltkreises auf einem N-Substrat vor Verpolung |
US11728381B2 (en) * | 2021-04-23 | 2023-08-15 | Globalfoundries Singapore Pte. Ltd. | Electrostatic discharge (ESD) device with improved turn-on voltage |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3411200A (en) * | 1965-04-14 | 1968-11-19 | Westinghouse Electric Corp | Fabrication of semiconductor integrated circuits |
JPS53136980A (en) * | 1977-05-04 | 1978-11-29 | Nippon Telegr & Teleph Corp <Ntt> | Resistance value correction method for poly crystal silicon resistor |
JPS59189675A (ja) * | 1983-04-12 | 1984-10-27 | Seiko Instr & Electronics Ltd | 半導体装置 |
JPS60767A (ja) * | 1983-06-17 | 1985-01-05 | Hitachi Ltd | 半導体装置 |
FR2598852B1 (fr) * | 1986-05-16 | 1988-10-21 | Eurotechnique Sa | Dispositif de protection d'entree pour circuits integres en technologie cmos. |
JPH03295268A (ja) * | 1990-04-13 | 1991-12-26 | Sony Corp | 半導体装置 |
US5229635A (en) * | 1991-08-21 | 1993-07-20 | Vlsi Technology, Inc. | ESD protection circuit and method for power-down application |
DE59108436D1 (de) * | 1991-10-22 | 1997-02-06 | Itt Ind Gmbh Deutsche | Schutzschaltung für Anschlusskontakte von monolithisch integrierten Schaltungen |
US5345356A (en) * | 1992-06-05 | 1994-09-06 | At&T Bell Laboratories | ESD protection of output buffers |
-
1993
- 1993-10-09 DE DE4334515A patent/DE4334515C1/de not_active Expired - Lifetime
-
1994
- 1994-08-30 DE DE59403534T patent/DE59403534D1/de not_active Expired - Lifetime
- 1994-08-30 EP EP94113489A patent/EP0647970B1/de not_active Expired - Lifetime
- 1994-10-05 US US08/318,150 patent/US5504361A/en not_active Expired - Lifetime
- 1994-10-08 KR KR1019940025942A patent/KR100276495B1/ko not_active Expired - Fee Related
- 1994-10-08 CN CN94117031A patent/CN1043388C/zh not_active Expired - Fee Related
- 1994-10-11 JP JP24560594A patent/JP3559075B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5504361A (en) | 1996-04-02 |
JP3559075B2 (ja) | 2004-08-25 |
JPH07245348A (ja) | 1995-09-19 |
DE59403534D1 (de) | 1997-09-04 |
EP0647970A1 (de) | 1995-04-12 |
DE4334515C1 (de) | 1994-10-20 |
KR950012714A (ko) | 1995-05-16 |
EP0647970B1 (de) | 1997-07-30 |
CN1043388C (zh) | 1999-05-12 |
CN1109637A (zh) | 1995-10-04 |
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