KR100210716B1 - 반도체 집적 회로 장치 - Google Patents
반도체 집적 회로 장치 Download PDFInfo
- Publication number
- KR100210716B1 KR100210716B1 KR1019910005410A KR910005410A KR100210716B1 KR 100210716 B1 KR100210716 B1 KR 100210716B1 KR 1019910005410 A KR1019910005410 A KR 1019910005410A KR 910005410 A KR910005410 A KR 910005410A KR 100210716 B1 KR100210716 B1 KR 100210716B1
- Authority
- KR
- South Korea
- Prior art keywords
- circuit
- reference voltage
- standby
- power supply
- differential amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (1)
- 내부 회로와 동작시에 상기 내부 회로에 증폭 회로를 개재해서 기준 전압을 공급함과 함께 대기시에 오프되는 제1의 기준 전압 발생 회로와, 최소한 대기시에 상기한 내부 회로에 전압을 공급하는 전원 전압 변환 회로와, 대기시에서 동작시에 이르는 과도 기간중으로 상기 증폭 회로를 구동하는 제2의 기준 전압 발생 회로를 갖는 것을 특징으로 하는 반도체 집적 회로 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP90426 | 1990-04-06 | ||
JP2090426A JPH03290895A (ja) | 1990-04-06 | 1990-04-06 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910019048A KR910019048A (ko) | 1991-11-30 |
KR100210716B1 true KR100210716B1 (ko) | 1999-07-15 |
Family
ID=13998281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910005410A Expired - Fee Related KR100210716B1 (ko) | 1990-04-06 | 1991-04-04 | 반도체 집적 회로 장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5280455A (ko) |
JP (1) | JPH03290895A (ko) |
KR (1) | KR100210716B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150048391A (ko) * | 2013-10-28 | 2015-05-07 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그것을 포함하는 데이터 저장 장치 |
Families Citing this family (51)
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US5461338A (en) * | 1992-04-17 | 1995-10-24 | Nec Corporation | Semiconductor integrated circuit incorporated with substrate bias control circuit |
JPH062115U (ja) * | 1992-06-19 | 1994-01-14 | ヤマハ株式会社 | 磁気式検出装置 |
KR0169157B1 (ko) * | 1993-11-29 | 1999-02-01 | 기다오까 다까시 | 반도체 회로 및 mos-dram |
KR0131746B1 (ko) * | 1993-12-01 | 1998-04-14 | 김주용 | 내부 강압전원 회로 |
US5530398A (en) * | 1994-04-11 | 1996-06-25 | Rockwell International Corporation | Accurate reference generation technique valid during system power-up transients |
US5539631A (en) * | 1994-06-16 | 1996-07-23 | Ion Systems Incorporated | Converter circuits using a silicon controlled rectifier |
JP3645593B2 (ja) * | 1994-09-09 | 2005-05-11 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
US5689209A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Low-side bidirectional battery disconnect switch |
JP3175521B2 (ja) * | 1995-01-27 | 2001-06-11 | 日本電気株式会社 | シリコン・オン・インシュレータ半導体装置及びバイアス電圧発生回路 |
KR0151032B1 (ko) * | 1995-04-24 | 1999-01-15 | 김광호 | 패키지 레벨 직류전압 테스트가 가능한 반도체 메모리장치 |
US5552698A (en) * | 1995-06-29 | 1996-09-03 | United Microelectronics Corp. | Voltage supply system for IC chips |
US5619137A (en) * | 1996-02-12 | 1997-04-08 | Allegro Microsystems, Inc. | Chopped low power magnetic-field detector with hysteresis memory |
JP3533306B2 (ja) | 1996-04-02 | 2004-05-31 | 株式会社東芝 | 半導体集積回路装置 |
US5841724A (en) * | 1997-06-12 | 1998-11-24 | Enable Semiconductor, Inc. | Voltage source and memory-voltage switch in a memory chip |
KR100272163B1 (ko) * | 1997-12-30 | 2000-11-15 | 윤종용 | 대기용어레이전압발생기를갖는반도체메모리장치 |
IT1312244B1 (it) * | 1999-04-09 | 2002-04-09 | St Microelectronics Srl | Circuito di riferimento di tensione a bandgap. |
JP4216415B2 (ja) | 1999-08-31 | 2009-01-28 | 株式会社ルネサステクノロジ | 半導体装置 |
US6466082B1 (en) * | 2000-05-17 | 2002-10-15 | Advanced Micro Devices, Inc. | Circuit technique to deal with floating body effects |
US6661279B2 (en) * | 2001-04-11 | 2003-12-09 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit which outputs first internal power supply voltage and second internal power supply voltage lower than first internal supply power voltage |
DE10124965A1 (de) * | 2001-05-21 | 2002-12-12 | Infineon Technologies Ag | Verfahren zum Umschalten eines Bezugsspannungspotentials für Überspannungsschutzeinrichtungen |
US7061049B2 (en) * | 2001-06-12 | 2006-06-13 | Kabushiki Kaisha Toshiba | Semiconductor device using SOI device and semiconductor integrated circuit using the semiconductor device |
KR20030002769A (ko) * | 2001-06-29 | 2003-01-09 | 주식회사 하이닉스반도체 | 반도체 소자의 동작전압 공급회로 |
JP2003045189A (ja) * | 2001-07-31 | 2003-02-14 | Fujitsu Ltd | 半導体メモリ |
US6677804B2 (en) * | 2002-02-11 | 2004-01-13 | Micron Technology, Inc. | Dual bandgap voltage reference system and method for reducing current consumption during a standby mode of operation and for providing reference stability during an active mode of operation |
DE50305682D1 (de) * | 2002-04-03 | 2006-12-28 | Infineon Technologies Ag | Spannungsregleranordnung |
JP4021283B2 (ja) * | 2002-08-28 | 2007-12-12 | 富士通株式会社 | 半導体装置 |
KR100555509B1 (ko) | 2003-07-23 | 2006-03-03 | 삼성전자주식회사 | 선택적 전압 레퍼런스로 소모 전력을 절감하는 내부 전압변환기, 이를 구비한 반도체 장치 및 그 방법 |
KR100560945B1 (ko) * | 2003-11-26 | 2006-03-14 | 매그나칩 반도체 유한회사 | 온-칩 기준전압 발생장치를 구비하는 반도체 칩 |
JP2005190381A (ja) * | 2003-12-26 | 2005-07-14 | Ricoh Co Ltd | 定電圧電源 |
KR100610020B1 (ko) * | 2005-01-13 | 2006-08-08 | 삼성전자주식회사 | 반도체 메모리 장치에서의 셀 파워 스위칭 회로와 그에따른 셀 파워 전압 인가방법 |
KR100727320B1 (ko) * | 2005-07-15 | 2007-06-12 | 삼성전자주식회사 | 반도체 장치의 전원공급 회로 및 전원공급 방법 |
JP4528254B2 (ja) * | 2005-11-25 | 2010-08-18 | 富士通セミコンダクター株式会社 | 電源電圧検出回路 |
CA2541046A1 (en) * | 2006-03-27 | 2007-09-27 | Mosaid Technologies Incorporated | Power supply testing architecture |
KR100780623B1 (ko) * | 2006-06-30 | 2007-11-29 | 주식회사 하이닉스반도체 | 반도체 소자의 내부전압 생성장치 |
KR100806120B1 (ko) * | 2006-08-22 | 2008-02-22 | 삼성전자주식회사 | 내부 전원전압 발생회로 및 내부 전원전압 발생방법 |
JP4756701B2 (ja) * | 2006-12-13 | 2011-08-24 | 三洋電機株式会社 | 電源電圧検出回路 |
US20080169866A1 (en) * | 2007-01-16 | 2008-07-17 | Zerog Wireless, Inc. | Combined charge storage circuit and bandgap reference circuit |
JP5511166B2 (ja) * | 2008-09-10 | 2014-06-04 | セイコーインスツル株式会社 | 半導体装置 |
US8575976B2 (en) * | 2009-11-23 | 2013-11-05 | Samsung Electronics Co., Ltd. | Frequency divider systems and methods thereof |
US9423814B2 (en) | 2010-03-16 | 2016-08-23 | Macronix International Co., Ltd. | Apparatus of supplying power while maintaining its output power signal and method therefor |
US8374007B2 (en) * | 2010-03-16 | 2013-02-12 | Macronix International Co., Ltd. | Supplying power with maintaining its output power signal with the assistance of another power apply and method therefor |
US8289798B2 (en) * | 2010-03-17 | 2012-10-16 | International Business Machines Corporation | Voltage regulator bypass in memory device |
US9048136B2 (en) | 2011-10-26 | 2015-06-02 | GlobalFoundries, Inc. | SRAM cell with individual electrical device threshold control |
US9029956B2 (en) | 2011-10-26 | 2015-05-12 | Global Foundries, Inc. | SRAM cell with individual electrical device threshold control |
JP5961374B2 (ja) * | 2011-12-09 | 2016-08-02 | ラピスセミコンダクタ株式会社 | 電源装置、電源装置の制御方法及び電子機器 |
US9058049B2 (en) * | 2012-09-11 | 2015-06-16 | St-Ericsson Sa | Modular low-power unit with analog synchronization loop usable with a low-dropout regulator |
US8867281B2 (en) * | 2013-03-15 | 2014-10-21 | Silicon Storage Technology, Inc. | Hybrid chargepump and regulation means and method for flash memory device |
US10401886B1 (en) * | 2014-07-30 | 2019-09-03 | Cirrus Logic, Inc. | Systems and methods for providing an auto-calibrated voltage reference |
US10386875B2 (en) * | 2017-04-27 | 2019-08-20 | Pixart Imaging Inc. | Bandgap reference circuit and sensor chip using the same |
JP6673948B2 (ja) | 2018-01-29 | 2020-04-01 | ファナック株式会社 | 電源制御装置および電源制御装置の制御方法 |
US12027227B2 (en) * | 2020-12-22 | 2024-07-02 | Micron Technology, Inc. | Low power management for sleep mode operation of a memory device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4788450A (en) * | 1987-09-11 | 1988-11-29 | General Electric Company | Backup power switch |
-
1990
- 1990-04-06 JP JP2090426A patent/JPH03290895A/ja active Pending
-
1991
- 1991-04-04 KR KR1019910005410A patent/KR100210716B1/ko not_active Expired - Fee Related
- 1991-04-05 US US07/680,821 patent/US5280455A/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150048391A (ko) * | 2013-10-28 | 2015-05-07 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그것을 포함하는 데이터 저장 장치 |
KR102106588B1 (ko) * | 2013-10-28 | 2020-05-04 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그것을 포함하는 데이터 저장 장치 |
Also Published As
Publication number | Publication date |
---|---|
JPH03290895A (ja) | 1991-12-20 |
US5280455A (en) | 1994-01-18 |
KR910019048A (ko) | 1991-11-30 |
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