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JPS6484667A - Insulated-gate transistor - Google Patents

Insulated-gate transistor

Info

Publication number
JPS6484667A
JPS6484667A JP24082787A JP24082787A JPS6484667A JP S6484667 A JPS6484667 A JP S6484667A JP 24082787 A JP24082787 A JP 24082787A JP 24082787 A JP24082787 A JP 24082787A JP S6484667 A JPS6484667 A JP S6484667A
Authority
JP
Japan
Prior art keywords
region
voltage
drain
transistor
vsub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24082787A
Other languages
English (en)
Inventor
Sanae Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24082787A priority Critical patent/JPS6484667A/ja
Publication of JPS6484667A publication Critical patent/JPS6484667A/ja
Pending legal-status Critical Current

Links

JP24082787A 1987-09-28 1987-09-28 Insulated-gate transistor Pending JPS6484667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24082787A JPS6484667A (en) 1987-09-28 1987-09-28 Insulated-gate transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24082787A JPS6484667A (en) 1987-09-28 1987-09-28 Insulated-gate transistor

Publications (1)

Publication Number Publication Date
JPS6484667A true JPS6484667A (en) 1989-03-29

Family

ID=17065287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24082787A Pending JPS6484667A (en) 1987-09-28 1987-09-28 Insulated-gate transistor

Country Status (1)

Country Link
JP (1) JPS6484667A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352914A (en) * 1992-08-03 1994-10-04 Hughes Aircraft Company Field-effect transistor with structure for suppressing hot-electron effects, and method of fabricating the transistor
US5567965A (en) * 1994-05-16 1996-10-22 Samsung Electronics Co., Ltd. High-voltage transistor with LDD regions
WO1997041604A1 (de) * 1996-04-29 1997-11-06 Siemens Aktiengesellschaft Ldd-mosfet
US6724041B2 (en) 1996-11-05 2004-04-20 Power Integrations, Inc. Method of making a high-voltage transistor with buried conduction regions
US6787437B2 (en) 1996-11-05 2004-09-07 Power Integrations, Inc. Method of making a high-voltage transistor with buried conduction regions

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352914A (en) * 1992-08-03 1994-10-04 Hughes Aircraft Company Field-effect transistor with structure for suppressing hot-electron effects, and method of fabricating the transistor
US5567965A (en) * 1994-05-16 1996-10-22 Samsung Electronics Co., Ltd. High-voltage transistor with LDD regions
US5879995A (en) * 1994-05-16 1999-03-09 Samsung Electronics Co., Ltd. High-voltage transistor and manufacturing method therefor
WO1997041604A1 (de) * 1996-04-29 1997-11-06 Siemens Aktiengesellschaft Ldd-mosfet
US6724041B2 (en) 1996-11-05 2004-04-20 Power Integrations, Inc. Method of making a high-voltage transistor with buried conduction regions
US6768172B2 (en) 1996-11-05 2004-07-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6777749B2 (en) 1996-11-05 2004-08-17 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6787437B2 (en) 1996-11-05 2004-09-07 Power Integrations, Inc. Method of making a high-voltage transistor with buried conduction regions
US6800903B2 (en) 1996-11-05 2004-10-05 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6828631B2 (en) 1996-11-05 2004-12-07 Power Integrations, Inc High-voltage transistor with multi-layer conduction region

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