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JPS6450470A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS6450470A
JPS6450470A JP20745887A JP20745887A JPS6450470A JP S6450470 A JPS6450470 A JP S6450470A JP 20745887 A JP20745887 A JP 20745887A JP 20745887 A JP20745887 A JP 20745887A JP S6450470 A JPS6450470 A JP S6450470A
Authority
JP
Japan
Prior art keywords
electrode
effect transistor
gate
field
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20745887A
Other languages
Japanese (ja)
Inventor
Osamu Shiozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20745887A priority Critical patent/JPS6450470A/en
Publication of JPS6450470A publication Critical patent/JPS6450470A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To exclude a noneffective component which does not contribute to an amplifying operation, by providing a gate electrode and a drain electrode facing each other, and covering the gate and drain electrodes with a conductive layer connected to a source electrode. CONSTITUTION:In a field-effect transistor chip 1, a gate electrode 23 and a drain electrode 33 face each other through a channel region, and a source electrode 53 is so extended as to cover a channel region. Since the extension of the electrode 53 covers a channel in which the electrodes 23 and 33 approaches in this manner, the extension of the electrode 53 operates as a shielding electrode to prevent an input current from the electrode 23 to the electrode 33 from flowing.
JP20745887A 1987-08-20 1987-08-20 Field-effect transistor Pending JPS6450470A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20745887A JPS6450470A (en) 1987-08-20 1987-08-20 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20745887A JPS6450470A (en) 1987-08-20 1987-08-20 Field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6450470A true JPS6450470A (en) 1989-02-27

Family

ID=16540103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20745887A Pending JPS6450470A (en) 1987-08-20 1987-08-20 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6450470A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103137A (en) * 1990-08-23 1992-04-06 Nec Corp Field effect transistor and manufacture thereof
JPH098060A (en) * 1995-06-16 1997-01-10 Nec Corp Semiconductor device
JP2009147366A (en) * 2009-03-12 2009-07-02 Mitsubishi Electric Corp Semiconductor device
JP2011142182A (en) * 2010-01-06 2011-07-21 Sharp Corp Field-effect transistor
JP6195031B1 (en) * 2016-10-24 2017-09-13 三菱電機株式会社 High frequency amplifier

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567171A (en) * 1978-11-13 1980-05-21 Mitsubishi Electric Corp Preparation of space wiring type field-effect transistor
JPS61172376A (en) * 1985-01-25 1986-08-04 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5567171A (en) * 1978-11-13 1980-05-21 Mitsubishi Electric Corp Preparation of space wiring type field-effect transistor
JPS61172376A (en) * 1985-01-25 1986-08-04 Mitsubishi Electric Corp Semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103137A (en) * 1990-08-23 1992-04-06 Nec Corp Field effect transistor and manufacture thereof
JPH098060A (en) * 1995-06-16 1997-01-10 Nec Corp Semiconductor device
JP2009147366A (en) * 2009-03-12 2009-07-02 Mitsubishi Electric Corp Semiconductor device
JP2011142182A (en) * 2010-01-06 2011-07-21 Sharp Corp Field-effect transistor
JP6195031B1 (en) * 2016-10-24 2017-09-13 三菱電機株式会社 High frequency amplifier
WO2018078686A1 (en) * 2016-10-24 2018-05-03 三菱電機株式会社 High frequency amplifier
CN109863592A (en) * 2016-10-24 2019-06-07 三菱电机株式会社 High-frequency amplifier
US10951174B2 (en) 2016-10-24 2021-03-16 Mitsubishi Electric Corporation High-frequency amplifier
CN109863592B (en) * 2016-10-24 2022-12-20 三菱电机株式会社 High frequency amplifier

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