JPS6430244A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6430244A JPS6430244A JP18696587A JP18696587A JPS6430244A JP S6430244 A JPS6430244 A JP S6430244A JP 18696587 A JP18696587 A JP 18696587A JP 18696587 A JP18696587 A JP 18696587A JP S6430244 A JPS6430244 A JP S6430244A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon nitride
- nitride film
- gap
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 6
- 238000005530 etching Methods 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 241000293849 Cordylanthus Species 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To suppress penetration by a bird's beak and to render microstructural with facility an element isolating region by a method wherein a gap is provided in a pad oxide at the lower end of a silicon nitride film and the gap is filled with a polycrystalline silicon film. CONSTITUTION:A silicon nitride film 13 is formed on the entire surface of a pad oxide film 12, and the silicon nitride film 13 is then subjected to etching. A photoresist film and the silicon nitride film 13 patterned in said etching process serve as a mask in an ion implanting process, which results in a channel stop layer 14. A process follows wherein over-etching is accomplished for the providing of a gap 15 in the pad oxide film 12 at the lower end of the silicon nitride film 13, with the silicon nitride film 13 serving as an etching-resistant mask. On the entire surface of a semiconductor substrate 11, a polycrystalline silicon film 16 is deposited, filling up the gap 15. The polycrystalline silicon film 16 is then subjected to thermal oxidation for conversion into a silicon oxide film 17.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18696587A JPS6430244A (en) | 1987-07-27 | 1987-07-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18696587A JPS6430244A (en) | 1987-07-27 | 1987-07-27 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6430244A true JPS6430244A (en) | 1989-02-01 |
Family
ID=16197826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18696587A Pending JPS6430244A (en) | 1987-07-27 | 1987-07-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6430244A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5175123A (en) * | 1990-11-13 | 1992-12-29 | Motorola, Inc. | High-pressure polysilicon encapsulated localized oxidation of silicon |
| JPH05182959A (en) * | 1990-12-26 | 1993-07-23 | Korea Electron Telecommun | Method of isolating semiconductor element utilizing local polyoxide |
-
1987
- 1987-07-27 JP JP18696587A patent/JPS6430244A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5175123A (en) * | 1990-11-13 | 1992-12-29 | Motorola, Inc. | High-pressure polysilicon encapsulated localized oxidation of silicon |
| USRE35294E (en) * | 1990-11-13 | 1996-07-09 | Motorola, Inc. | Polysilicon encapsulated localized oxidation of silicon |
| JPH05182959A (en) * | 1990-12-26 | 1993-07-23 | Korea Electron Telecommun | Method of isolating semiconductor element utilizing local polyoxide |
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