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JPS5434769A - Photoetching method for silicon semiconductor wafer - Google Patents

Photoetching method for silicon semiconductor wafer

Info

Publication number
JPS5434769A
JPS5434769A JP10125277A JP10125277A JPS5434769A JP S5434769 A JPS5434769 A JP S5434769A JP 10125277 A JP10125277 A JP 10125277A JP 10125277 A JP10125277 A JP 10125277A JP S5434769 A JPS5434769 A JP S5434769A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
silicon semiconductor
photoetching method
oxide film
photoetching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10125277A
Other languages
Japanese (ja)
Other versions
JPH0122727B2 (en
Inventor
Takayuki Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP10125277A priority Critical patent/JPS5434769A/en
Publication of JPS5434769A publication Critical patent/JPS5434769A/en
Publication of JPH0122727B2 publication Critical patent/JPH0122727B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To eliminate an oxide film which resides in a canopy shape at the time of photoetching a Si wafer, by enabling taper-shaped etching against the oxide film by providing a silane coupling layer between the oxide film and photo-resist layer.
COPYRIGHT: (C)1979,JPO&Japio
JP10125277A 1977-08-24 1977-08-24 Photoetching method for silicon semiconductor wafer Granted JPS5434769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10125277A JPS5434769A (en) 1977-08-24 1977-08-24 Photoetching method for silicon semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10125277A JPS5434769A (en) 1977-08-24 1977-08-24 Photoetching method for silicon semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS5434769A true JPS5434769A (en) 1979-03-14
JPH0122727B2 JPH0122727B2 (en) 1989-04-27

Family

ID=14295714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10125277A Granted JPS5434769A (en) 1977-08-24 1977-08-24 Photoetching method for silicon semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5434769A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53116025U (en) * 1977-02-24 1978-09-14
JPS5649526A (en) * 1979-09-29 1981-05-06 Toshiba Corp Manufacture of semiconductor device
JP2007520064A (en) * 2004-01-16 2007-07-19 ブルーワー サイエンス アイ エヌ シー． Spin-on protective coating for wet etching of microelectronic substrates

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53116025U (en) * 1977-02-24 1978-09-14
JPS5649526A (en) * 1979-09-29 1981-05-06 Toshiba Corp Manufacture of semiconductor device
JPS6327850B2 (en) * 1979-09-29 1988-06-06 Tokyo Shibaura Electric Co
JP2007520064A (en) * 2004-01-16 2007-07-19 ブルーワー サイエンス アイ エヌ シー． Spin-on protective coating for wet etching of microelectronic substrates

Also Published As

Publication number Publication date
JPH0122727B2 (en) 1989-04-27

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