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JPS53148988A - Manufacture of semiconductor substrate - Google Patents

Manufacture of semiconductor substrate

Info

Publication number
JPS53148988A
JPS53148988A JP6440877A JP6440877A JPS53148988A JP S53148988 A JPS53148988 A JP S53148988A JP 6440877 A JP6440877 A JP 6440877A JP 6440877 A JP6440877 A JP 6440877A JP S53148988 A JPS53148988 A JP S53148988A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
substrate
manufacture
layer
concave part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6440877A
Other languages
Japanese (ja)
Other versions
JPS571138B2 (en
Inventor
Kazuhiko Tsuji
Takeshi Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6440877A priority Critical patent/JPS53148988A/en
Publication of JPS53148988A publication Critical patent/JPS53148988A/en
Publication of JPS571138B2 publication Critical patent/JPS571138B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)

Abstract

PURPOSE: To reduce the bird beak occurring at the insulating isolation region which separates the substrate into island regions and thus to secure a flat surfacr for the substrate, by forming the concave part via a mask on the semiconductor substrate after an epitaxial layer is grown and then filling the concave part with the SiO2 layer obtained by oxidizing the poly-crystal Si layer.
COPYRIGHT: (C)1978,JPO&Japio
JP6440877A 1977-05-31 1977-05-31 Manufacture of semiconductor substrate Granted JPS53148988A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6440877A JPS53148988A (en) 1977-05-31 1977-05-31 Manufacture of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6440877A JPS53148988A (en) 1977-05-31 1977-05-31 Manufacture of semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS53148988A true JPS53148988A (en) 1978-12-26
JPS571138B2 JPS571138B2 (en) 1982-01-09

Family

ID=13257440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6440877A Granted JPS53148988A (en) 1977-05-31 1977-05-31 Manufacture of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS53148988A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204150A (en) * 1981-06-10 1982-12-14 Fujitsu Ltd Manufacture of semiconductor device
US4916086A (en) * 1987-06-18 1990-04-10 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device having rounded trench corners
US4954459A (en) * 1988-05-12 1990-09-04 Advanced Micro Devices, Inc. Method of planarization of topologies in integrated circuit structures
US4962064A (en) * 1988-05-12 1990-10-09 Advanced Micro Devices, Inc. Method of planarization of topologies in integrated circuit structures

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50107877A (en) * 1974-01-30 1975-08-25
JPS5226182A (en) * 1975-08-25 1977-02-26 Hitachi Ltd Manufacturing method of semi-conductor unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50107877A (en) * 1974-01-30 1975-08-25
JPS5226182A (en) * 1975-08-25 1977-02-26 Hitachi Ltd Manufacturing method of semi-conductor unit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204150A (en) * 1981-06-10 1982-12-14 Fujitsu Ltd Manufacture of semiconductor device
US4916086A (en) * 1987-06-18 1990-04-10 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device having rounded trench corners
US4954459A (en) * 1988-05-12 1990-09-04 Advanced Micro Devices, Inc. Method of planarization of topologies in integrated circuit structures
US4962064A (en) * 1988-05-12 1990-10-09 Advanced Micro Devices, Inc. Method of planarization of topologies in integrated circuit structures

Also Published As

Publication number Publication date
JPS571138B2 (en) 1982-01-09

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