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JPS63293966A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS63293966A
JPS63293966A JP62128233A JP12823387A JPS63293966A JP S63293966 A JPS63293966 A JP S63293966A JP 62128233 A JP62128233 A JP 62128233A JP 12823387 A JP12823387 A JP 12823387A JP S63293966 A JPS63293966 A JP S63293966A
Authority
JP
Japan
Prior art keywords
section
memory
logic
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62128233A
Other languages
English (en)
Inventor
Satoru Isomura
悟 磯村
Masato Iwabuchi
岩渕　正人
Katsumi Ogiue
荻上　勝己
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62128233A priority Critical patent/JPS63293966A/ja
Priority to US07/198,311 priority patent/US4959704A/en
Publication of JPS63293966A publication Critical patent/JPS63293966A/ja
Priority to US07/579,698 priority patent/US5103282A/en
Priority to US07/853,090 priority patent/US5243208A/en
Priority to US08/114,091 priority patent/US5477067A/en
Pending legal-status Critical Current

Links

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体集積回路装置に関し、特に、メモリ部
と論理部とを有する超高速ＬＳＩに適用して有効な技術
に関するものである。
〔従来技術〕
近年、例えば大型計算機用のメモリＬＳＩとしては、計
算機の高速化の要求から、周辺の論理機能をも持たせた
メモリＬＳＩ（以下、論理付きメモリＬＳＩという）が
使用されている。
本発明者は、この論理付きメモリＬＳＩについて検討し
た。以下は公知とされた技術ではないが、本発明者によ
って検討された技術であり、その概要は次のとおりであ
る。
すなわち、本発明者によって検討された論理付きメモリ
ＬＳＩにおいては、入出力回路部と論理部との間に例え
ばＲＡ　Ｍ　（Ｒａｎｄｏｍ　Ａｃｃｅｓｓ　Ｍｅｍｏ
ｒｙ）のようなメモリ部が設けられている。このメモリ
部を構成するメモリセルアレイは配線の全層を使用して
構成されているため、入出力回路部と論理部との間を（
ｔｉ号配線により結線する場合、これらの信号配線は前
記メモリ部の上を通過することができない。そこで、こ
れらの信号配線は、前記メモリ部を迂回して前記論理部
に接続されていた。
〔発明が解決しようとする問題点〕
しかしながら、上述のようにメモリ部を迂回して信号配
線を論理部に接続する場合には、必然的に信号配線の配
線長が長くなるため、信号の遅延時間の増大を招くとい
う問題があった。また、入出力回路部の端子毎に信号配
線の配線長が変わるため、信号配線毎に信号の遅延時間
が異なり、従ってこれに起因してスキューが生じてしま
うという問題もあった。
本発明の目的は、信号の遅延時間の低減を図ることがで
きる技術を提供することにある。
本発明の他の目的は、スキューの発生の防止を図ること
ができる技術を提供することにある。
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述及び添付図面によって明らかになるであろ
う。
〔問題点を解決する・ための手段〕
本願において開示される発明のうち１代表的なものの概
要を簡単に説明すれば、下記のとおりである。
すなわち、メモリ部をはさんで設けられる複数の回路間
を接続する信号配線を形成するために用いられる信号配
線チャネルをメモリ部の上に設けている。
〔作用〕
上記した手段によれば、信号配線の最短化及び等長比が
可能となるので、信号の遅延時間の低減及びスキューの
発生の防止を図ることができる。
〔実施例〕
以下、本発明の実施例を図面を用いて具体的に説明する
。
なお、実施例を説明するための全図において、同一機能
を有するものには同一符号を付け、その繰り返しの説明
は省略する。
失態盤上 第１図は１本発明の実施例１による論理付きメモリＬＳ
Ｉを示す平面図である。
第１図に示すように、実施例■による論理付きメモリＬ
ＳＩにおいては、例えばシリコンチップのような半導体
チップ１の周辺部に入出力回路部２が設けられている。
符号３は、多数のメモリセルにより構成されるメモリセ
ルアレイから成る例えばＲＡＭのようなメモリ部であり
１本実施例においては４個設けられている。さらに、前
記半導体チップ１の中央部には、多数のゲートから成る
論理部４が設けられている。
前記入出力回路部２と前記論理部３との間は信号配線５
により接続されている０本実施例においては、メモリ部
３の上に信号配線チャネルＳＣが設けられ、この信号配
線チャネルＳｃの上にこれらの信号配線５が設けられて
いる。
本実施例による論理付きメモリＬＳＩにおいては、メモ
リ部３を構成するメモリセルアレイの配線は例えば（全
配線層数−１）層の配線により行い、残りの一層を信号
配線５として用いる。
上述のようにメモリ部３の上に信号配線チャネルＳＣを
設けているので、メモリ部３を迂回することなく入出力
回路部２と論理部４とを信号配線５により結線すること
が可能となり、このため信号配線５の最短化が可能とな
る。これによって、信号の遅延時間の低減を図ることが
できるので。
ＬＳＩの高速動作化を図ることができる。また。
入出力回路部２の全ての端子に接続される信号配線５の
等長比が可能となるので、これらの信号配線５の信号の
遅延時間を同一とすることができ、従ってスキューの発
生を防止することができる。
さらに、これによってＬＳＩの全入出力ビンを同等に取
り扱うことが可能となるため、ＬＳＩのタイミング設計
が容易となる。
さらに１本実施例による論理付きメモリＬＳＩを例えば
ゲートアレイ方式のＬＳＩにより構成する場合にも、信
号配線チャネルＳＣをメモリ部３の上に定義して自動設
計（ＤＡ）による自動配線を行うことによって、上述と
同様な効果を得ることができる。また、この場合、信号
配線チャネルＳＣを信号配線５の配線のためだけに使用
することができるので、自動配線の自由度の向上を図る
ことができる。さらに、入出力回路部２の端子の位置の
設定の自由度が高くなるので、これらの端子が局所的に
集中するのを防止することができ、この結果、自動配線
が容易となる。なお、この場合、前記入出力回路部２の
各端子（ＬＳｉパッケージの各入出力ピンにそれぞれ接
続されている）には、それぞれ１本又は複数本の信号配
線５が対応する構成とすることができる。その場合、Ｄ
Ａにより信号配線５の自動配線を行う場合には、ＤＡ上
のピンは前記入出力回路部２の端子に対応した信号配線
５の端点をピンとして定義すれば、自動的に入出力回路
部へ接続される方式とすることも可能である。
夾胤涯ｌ 第２図は、本発明の実施例■による論理付きメモリＬＳ
Ｉを示す平面図である。
第２図に示すように、実施例■による論理付きメモリＬ
ＳＩにおいては、メモリ部３が半導体チップ１の中央部
に設けられ、このメモリ部３を取り囲むように論理部４
が設けられている６本実施例においても、実施例１と同
様に、メモリ部３の上に信号配線チャネルＳＣが設けら
れている。そして、この信号配線チャネルＳＣ上に論理
部４間を接続する信号配線５が設けられている。従って
、入出力回路部２と論理部４との間の信号配線５のみな
らず、論理部４間の信号配線５の最短化及び等良化が可
能であり、従って信号の遅延時間の低減及びスキューの
発生の防止を図ることができる。
以上、本発明を実施例にもとづき具体的に説明したが、
本発明は、前記実施例に限定されるものではなく、その
要旨を逸脱しない範囲において種々変更可能であること
は言うまでもない。
例えば、半導体チップ１におけるメモリ部３及び論理部
４の形状、配置等は、上述の実施例！、■と異なる形状
、配置等とすることができる。また、本発明は、メモリ
部と論理部とを有する各種の半導体集積回路装置に適用
することができる。
〔発明の効果〕
本願において開示される発明のうち代表的なものによっ
て得られる効果を簡単に説明すれば、下　　　　　′記
のとおりである。
すなわち、信号の遅延時間の低減及びスキューの発生の
防止を図ることができる。
【図面の簡単な説明】
第１図は、本発明の実施例Ｉによる論理付きメモリＬＳ
Ｉを示す平面図、 第２図は１本発明の実施例■による論理付きメモリＬＳ
Ｉを示す平面図である。 図中、１・・・半導体チップ、２・・・入出力回路部、
３・・・メモリ部、４・・・論理部、５・・・信号配線
、ＳＣ・・・信号配線チャネルである。 第　　１　　図 第　　２　　図 Ｊ７シ

Claims (1)

  1. 【特許請求の範囲】 １、メモリ部と論理部とを有する半導体集積回路装置で
    あって、前記メモリ部をはさんで設けられる複数の回路
    間を接続する信号配線を形成するために用いられる信号
    配線チャネルを前記メモリ部の上に設けたことを特徴と
    する半導体集積回路装置。 ２、前記複数の回路が前記論理部及び入出力回路部から
    成ることを特徴とする特許請求の範囲第１項記載の半導
    体集積回路装置。 ３、前記複数の回路が複数の前記論理部から成ることを
    特徴とする特許請求の範囲第１項記載の半導体集積回路
    装置。 ４、前記メモリ部がＲＡＭから成ることを特徴とする特
    許請求の範囲第１項〜第３項のいずれか一項記載の半導
    体集積回路装置。
JP62128233A 1987-05-27 1987-05-27 半導体集積回路装置 Pending JPS63293966A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP62128233A JPS63293966A (ja) 1987-05-27 1987-05-27 半導体集積回路装置
US07/198,311 US4959704A (en) 1987-05-27 1988-05-25 Semiconductor integrated circuit device
US07/579,698 US5103282A (en) 1987-05-27 1990-09-10 Semiconductor integrated circuit device having a gate array with a ram and by-pass signal lines which interconnect a logic section and i/o unit circuit of the gate array
US07/853,090 US5243208A (en) 1987-05-27 1992-03-17 Semiconductor integrated circuit device having a gate array with a ram and by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate array
US08/114,091 US5477067A (en) 1987-05-27 1993-08-31 Semiconductor IC device having a RAM interposed between different logic sections and by-pass signal lines extending over the RAM for mutually connecting the logic sections

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62128233A JPS63293966A (ja) 1987-05-27 1987-05-27 半導体集積回路装置

Publications (1)

Publication Number Publication Date
JPS63293966A true JPS63293966A (ja) 1988-11-30

Family

ID=14979786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62128233A Pending JPS63293966A (ja) 1987-05-27 1987-05-27 半導体集積回路装置

Country Status (2)

Country Link
US (2) US4959704A (ja)
JP (1) JPS63293966A (ja)

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JP2007072616A (ja) * 2005-09-05 2007-03-22 Sony Corp 共有メモリ装置

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JPH0772991B2 (ja) * 1988-12-06 1995-08-02 三菱電機株式会社 半導体記憶装置
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JP3186084B2 (ja) * 1991-05-24 2001-07-11 日本電気株式会社 半導体メモリー装置
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JP2752863B2 (ja) * 1991-09-11 1998-05-18 日本電気株式会社 半導体装置
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JP3177464B2 (ja) * 1996-12-12 2001-06-18 株式会社日立製作所 入出力回路セル及び半導体集積回路装置
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JP4173751B2 (ja) * 2003-02-28 2008-10-29 株式会社ルネサステクノロジ 半導体装置
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KR100246074B1 (ko) * 1990-10-10 2000-04-01 가나이 쓰도무 반도체집적회로장치
JP2007072616A (ja) * 2005-09-05 2007-03-22 Sony Corp 共有メモリ装置

Also Published As

Publication number Publication date
US5103282A (en) 1992-04-07
US4959704A (en) 1990-09-25

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