JPS61220435A - Forming method for silicon oxide film - Google Patents
Forming method for silicon oxide filmInfo
- Publication number
- JPS61220435A JPS61220435A JP60062523A JP6252385A JPS61220435A JP S61220435 A JPS61220435 A JP S61220435A JP 60062523 A JP60062523 A JP 60062523A JP 6252385 A JP6252385 A JP 6252385A JP S61220435 A JPS61220435 A JP S61220435A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide film
- silicon oxide
- light
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 150000003377 silicon compounds Chemical class 0.000 claims description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 abstract description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 5
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract 3
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- ORGHESHFQPYLAO-UHFFFAOYSA-N vinyl radical Chemical compound C=[CH] ORGHESHFQPYLAO-UHFFFAOYSA-N 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 2
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、シリコン酸化膜の形成方法に関するもので、
より具体的には、半導体装置に使用されるシリコン酸化
膜の形成方法を提供するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for forming a silicon oxide film.
More specifically, the present invention provides a method of forming a silicon oxide film used in a semiconductor device.
従来の技術
従来のシリコン酸化ｌ１ｌｉ！（以下酸化膜）の形成方
法としては、（１）シリコン基板を高温酸化雰囲気中で
酸化する方法（基板の変質による膜形成法）、＠）シラ
ン系ガスと酸化性ガスの混合気体を熱、光。Prior Art Conventional Silicon Oxide l1li! (hereinafter referred to as oxide film) can be formed by: (1) oxidizing a silicon substrate in a high-temperature oxidizing atmosphere (film formation method by altering the quality of the substrate); @) heating a mixture of silane gas and oxidizing gas; light.
プラズマ等で化学反応をおこさせ膜を形成する方法（基
板への堆積による膜形成）、０）樹脂を塗布し熱処理に
より酸化する方法（変質による膜形成）などが挙げられ
る。Examples include a method of forming a film by causing a chemical reaction with plasma or the like (film formation by deposition on a substrate), and a method of applying a resin and oxidizing it by heat treatment (film formation by alteration).
発明が解決しようとする問題点
本発明は、前述の（２）に係わるものである。従来のシ
ラン系ガスと酸化性ガスの混合気体を熱、光。Problems to be Solved by the Invention The present invention relates to the above-mentioned (2). A mixture of conventional silane gas and oxidizing gas is heated and lighted.
プラズマ等で化学反応をおこさせ膜を形成させる方法で
製造される酸化膜の膜質は以下の欠点を有している。The film quality of an oxide film manufactured by a method of forming a film by causing a chemical reaction using plasma or the like has the following drawbacks.
（１） 膜質が均一でない。(1) Film quality is not uniform.
？） 膜が緻密でない。? ) The film is not dense.
（３） シリコンと酸化膜に界面トラップを形成する
。(3) Form interface traps between silicon and oxide film.
本発明はこの様な欠点を解決し、高品質の膜質を持つ酸
化膜を提供するものである。The present invention solves these drawbacks and provides an oxide film with high quality film quality.
問題点を解決するための手段
よ記問題点を解決する本発明の技術的な手段は、シリコ
ン基板を洗浄し、次とえば一般式％式％
（ここで、ムがＣ１！、−０ＣＨ３，−００２Ｈ５）で
示されるシリコン化合物を基板に吸着する工程およびた
とえば光照射するか、化学反応により前記シリコン化合
物の一部を水酸基に変換する工程により酸化膜を形成す
る方法である。Means for Solving the Problem The technical means of the present invention for solving the problem is to clean the silicon substrate, and then use the general formula % (where M is C1!, -0CH3, In this method, an oxide film is formed by a step of adsorbing a silicon compound represented by -002H5) onto a substrate and a step of converting a part of the silicon compound into hydroxyl groups by, for example, irradiation with light or a chemical reaction.
作用
一般に、塩化シラン、メトキシシラン、エトキシシラン
などは基板（シリコン）表面の水酸基と反応し、脱塩酸
あるいは脱アルコールし、−〇−の共有結合を生じ、基
板を単分子層でおおう。この様な反応を応用し単分子層
ずつ欠陥部分（−８ｉ−〇Ｈの残部）を少くなくし積層
を進めるために、一般式
％式％
のシリコン化合物が有効であることを発見し、本発明に
いたったものである。すなわち、前述の反応で基板の表
面に吸着したシリコン化合物は一〇−の共有結合を生成
し基板面に単分子層で固定される。しかる後に、酸化性
雰囲気で光（ビニル基と５ｉの結合を切断するエネルギ
ーを持つ波長）を照射するか、過酸化水素等を作用させ
、 Ｈｏ−５ｉを生成する。その後、前述の一般式で示
されるシリコン化合物を反応せしめる。この様な操作を
繰シ返し、所望の厚みの酸化膜せしめる。Function: In general, chlorinated silane, methoxysilane, ethoxysilane, etc. react with hydroxyl groups on the surface of the substrate (silicon), dehydrochloride or dealcoholize, produce -〇- covalent bonds, and cover the substrate with a monomolecular layer. In order to reduce the number of defects (remaining portions of -8i-〇H) in each monomolecular layer by applying such a reaction and proceed with lamination, it was discovered that a silicon compound having the general formula % is effective, and the present invention was developed. This is what led to this. That is, the silicon compound adsorbed onto the surface of the substrate in the above reaction generates 10- covalent bonds and is fixed to the substrate surface in a monomolecular layer. Thereafter, Ho-5i is generated by irradiating it with light (a wavelength that has the energy to break the bond between the vinyl group and 5i) in an oxidizing atmosphere or by acting on hydrogen peroxide or the like. Thereafter, a silicon compound represented by the above-mentioned general formula is reacted. This operation is repeated to form an oxide film of desired thickness.
この結果得られる酸化膜は従来の方法で得られる酸化膜
に比較して、膜質が均一で、緻密なも、のとなる。The resulting oxide film is more uniform in quality and denser than the oxide film obtained by conventional methods.
実施例
以下に本発明方法の一実施例を第１図〜第４図にもとづ
いて説明する。EXAMPLE An example of the method of the present invention will be described below with reference to FIGS. 1 to 4.
第１図において、１は基板で酸素中において光２を照射
しこの基板１を洗浄する。その後第２図に示すようにト
リクロルビニルシランを基板１に吸着させる。基板１と
反応後、過酸化水素を反応させ、ビニル基部分を切断し
、第３図に示すように水酸基を導入する。しかる後に、
第４図に示すようにトリクロルビニルシランを再び吸着
・反応させる。これを繰り返し、所定の膜厚の酸化膜を
得る。この様にして得られた酸化膜の耐圧は１０ＭＶ／
ａｘであった。In FIG. 1, reference numeral 1 denotes a substrate, and the substrate 1 is cleaned by irradiating light 2 in oxygen. Thereafter, trichlorovinylsilane is adsorbed onto the substrate 1 as shown in FIG. After reacting with the substrate 1, hydrogen peroxide is reacted to cut the vinyl group portion and introduce a hydroxyl group as shown in FIG. After that,
As shown in FIG. 4, trichlorovinylsilane is adsorbed and reacted again. This is repeated to obtain an oxide film of a predetermined thickness. The breakdown voltage of the oxide film obtained in this way was 10MV/
It was ax.
他の実施例として、トリメトキシビニルシランあるいは
トリエトキシビニルシランを用いた場合も同様の結果を
示し、脱ビニル基工程に光を用いた場合も同様の結果を
示した。As other examples, similar results were obtained when trimethoxyvinylsilane or triethoxyvinylsilane was used, and similar results were obtained when light was used in the vinyl removal step.
上記トリクロルビニルシラン、トリメトキシビニルシラ
ン、トリエトキシビニルシランハ一般式％式％
で示され、ムがそれぞれＣＩ、−００Ｈｓ、−ＱＣ２Ｈ
５に変わる。The above trichlorovinylsilane, trimethoxyvinylsilane, and triethoxyvinylsilane are represented by the general formula %, where CI, -00Hs, and -QC2H, respectively.
Changes to 5.
発明の効果
以上のように本発明によれば酸化膜を一層ずつ形成する
ものであるので得られる膜は緻密であり、ステップカバ
レージに優れ機械強度も大で、接着性も良好である。Effects of the Invention As described above, according to the present invention, since the oxide film is formed one layer at a time, the resulting film is dense, has excellent step coverage, has high mechanical strength, and has good adhesion.
第１図〜第４図は本発明の一実施例におけるシリコン酸
化膜の形成方法を説明するための図である。
１・・・・・・基板、２・川・・光。1 to 4 are diagrams for explaining a method of forming a silicon oxide film in one embodiment of the present invention. 1... Board, 2... River... Light.
Claims (4)
着する工程および前記シリコン化合物の一部を水酸基に
変換する工程を含むことを特徴とするシリコン酸化膜の
形成方法。(1) A method for forming a silicon oxide film, comprising the steps of cleaning a substrate, adsorbing a silicon compound onto the substrate, and converting a portion of the silicon compound into hydroxyl groups.
）で示されることを特徴とする特許請求の範囲第１項記
載のシリコン酸化膜の形成方法。(2) Silicon compounds have the general formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (Here, A is Cl, -OCH_3, -OC_2H_5
) The method for forming a silicon oxide film according to claim 1, characterized in that:
る特許請求の範囲第１項記載のシリコン酸化膜の形成方
法。(3) The method for forming a silicon oxide film according to claim 1, wherein light is used in the step of cleaning the substrate.
、光あるいは化学反応を用いることを特徴とする特許請
求の範囲第１項記載のシリコン酸化膜の形成方法。(4) The method for forming a silicon oxide film according to claim 1, wherein light or a chemical reaction is used in the step of converting a part of the silicon compound into hydroxyl groups.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60062523A JPS61220435A (en) | 1985-03-27 | 1985-03-27 | Forming method for silicon oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60062523A JPS61220435A (en) | 1985-03-27 | 1985-03-27 | Forming method for silicon oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61220435A true JPS61220435A (en) | 1986-09-30 |
Family
ID=13202628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60062523A Pending JPS61220435A (en) | 1985-03-27 | 1985-03-27 | Forming method for silicon oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61220435A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0610899A2 (en) * | 1993-02-09 | 1994-08-17 | Dow Corning Toray Silicone Company, Limited | Methods for the formation of a silicon oxide film |
-
1985
- 1985-03-27 JP JP60062523A patent/JPS61220435A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0610899A2 (en) * | 1993-02-09 | 1994-08-17 | Dow Corning Toray Silicone Company, Limited | Methods for the formation of a silicon oxide film |
| EP0610899A3 (en) * | 1993-02-09 | 1996-05-15 | Dow Corning Toray Silicone | Method for forming a layer of silicon oxide. |
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