516165 五、發明說明（1) 發明領域 本發明係關於半導體中介電材料層的製造方法，特別 是關於一種用以改良介電層間黏合性的方法。 發明背景 在現今的半導體製造技術中，介電材料層通常是作為 導電層間的絕緣層且用 以保護之下的積體電路，結構以避免污染，一般常用的介電 材料為二氧化矽，然而， 隨著導電元件的間距縮小，使用相同或不同組成的介電材 料作為相鄰的介電層，或者使用介電常數低於二氧化矽的 低介電常數（Low dielectric constant )材料介電材料 層，以維持電路元件功能已成為必然趨勢。 材料作為相鄰的介電 材料層緊接著形成在第 第一介電材料層。事實 疊合時，當二者之間的 呈現凹下或凸起的變 ，亦會由於上下二層的 不足而造成剝離脫落及 如切割的外力以及製造 上下二層因為黏性的不 黏性在半導體製造過程 當使用相同或不同組成的介電 層，其製造步驟通常為將第二介電 一介電材料層之上，以便完全覆蓋 上，當二不同組成的材料層被互相 應力大於黏合力時，底層材料則會 形，即使是上下二層皆為介電材料 厚度不同，同樣的會有因黏合力的 漏電流的現象。此外，當晶片遭受 過程中的溫度變化影響，也會使得 足而剝離。因此，材料層介面間的516165 V. Description of the invention (1) Field of the invention The present invention relates to a method for manufacturing a dielectric material layer in a semiconductor, and more particularly to a method for improving the adhesion between dielectric layers. BACKGROUND OF THE INVENTION In today's semiconductor manufacturing technology, the dielectric material layer is usually used as an insulating layer between conductive layers and is used to protect the integrated circuit underneath, and the structure is protected from pollution. The commonly used dielectric material is silicon dioxide. As the pitch of the conductive elements decreases, a dielectric material of the same or different composition is used as an adjacent dielectric layer, or a dielectric material of a low dielectric constant (Low dielectric constant) material whose dielectric constant is lower than that of silicon dioxide. Layers to maintain the function of circuit elements has become an inevitable trend. A material is formed next to the first dielectric material layer as an adjacent dielectric material layer. When the facts are superimposed, when the change between the two is concave or convex, it will also cause peeling off due to the lack of the upper and lower layers, and external forces such as cutting, and the manufacturing of the upper and lower layers because of the tackiness and non-stickiness. When a semiconductor manufacturing process uses a dielectric layer of the same or different composition, the manufacturing steps are usually to cover the second dielectric-dielectric material layer so as to completely cover it. When two material layers of different composition are stressed by each other, the adhesive force is greater than the adhesive force. At the same time, the underlying material will be shaped, even if the upper and lower layers are made of different dielectric materials, the leakage current due to adhesive force will also occur. In addition, when the wafer is affected by the temperature change in the process, it will also cause sufficient peeling. Therefore, the
第4頁 五、發明說明（3) 電材料層為含;δ夕的介電 电材#，較佳為有機矽氧烷 本發明之目的亦可益、 -主要包含碳化矽的第9一入以下步驟而達成，包括：形成 一介電材料層；在前牛^電材料層；使用氧電漿處理第 有機嫩層；；：：：理後的第-介電材料層上形成 在有機矽氧烷層上形成311^。 發明詳細說明 實施例一 黏以:方及/之1B =示本發明改良介電材料層 勒口〖生的方法之一較佳實施例。 首先明麥，¾弟1 Α圖，於義麻1本& 穑夺irvm ”乒庶“於基底1表面利用化學氣相沉 J法（CVD),儿積一層共形的第—介電 電材料2為以SlCxNy為基礎，其中χ^〇，ρ〇2二/ 較佳的材料為碳化矽、氮化矽或其混合物 厚度約介於5 0〜3 0 0 〇埃間，a A以雪將秘祕』 材每 J ，、马以電漿增強式化學氣相沉 積’所使用的反應氣體為四甲基石夕烧 (teramethylsilane)、關3及心，溫度介於2〇〇〜45(pc。於 本步驟中所使用的四甲基矽烷亦可使用三甲基矽烷、二 基矽烷或甲基矽烷取代。 接著請參考第1 B圖，使用氧電漿3處理第一介電材料 層2，以在第一介電材料層2提供氧離子，氧電漿3處理是 在50 —500 seem氧氣流里的環境中，以功率介於— 3⑽界5. Description of the invention on page 4 (3) The electric material layer is a dielectric material containing δ evening, preferably an organosiloxane. The purpose of the present invention may also be beneficial. The following steps are achieved, including: forming a dielectric material layer; forming a dielectric material layer on the front; using an oxygen plasma to treat the second organic tender layer; ::: forming a silicone material layer on the first dielectric material layer after treatment 311 ^ is formed on the oxane layer. Detailed description of the invention Example 1 Adhesive: Square and / of 1B = shows a preferred embodiment of the method for forming the improved dielectric material layer of the present invention. First, Ming Mai, ¾ brother 1 Α picture, Yu Yima 1 book & capture irvm "ping 庶" on the surface of substrate 1 by chemical vapor deposition J method (CVD), a layer of conformal first-dielectric material 2 is based on SlCxNy, of which χ ^ 〇, ρ〇2 // The preferred material is silicon carbide, silicon nitride or a mixture of about 50 to 300 angstroms in thickness. Secret's reaction gas is teramethylsilane, Guan 3 and Xin, the temperature is between 200 ~ 45 (pc The tetramethylsilane used in this step can also be replaced with trimethylsilane, diylsilane, or methylsilane. Then refer to Figure 1B, and use the oxygen plasma 3 to process the first dielectric material layer 2 In order to provide oxygen ions in the first dielectric material layer 2, the oxygen plasma 3 is processed in an environment of 50-500 seem oxygen flow, with a power in the range of -3.
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五、發明說明（4) 的漿在2 5 0-3 5 0°C的溫度下進行5-30秒即可；較佳的處理 條件為在3 0 0°C的溫度下處理10-20秒；氧電漿3處理步驟 可在與沉積第一介電材料層2相同的化學氣相沉積機台内 直接進行，亦可於第一介電材料層2沉積完成之後，另外 選用其化適合的電漿處理機台進行。 參考第1 C圖，在經過氧電漿3處理後的第一介電材料 層2上形成第二介電材料層4，其厚度約為50〜loooo埃，y此 第二介電材料層4可為含矽的介電材料，較佳為如^^八“的V. Description of the invention (4) The pulp can be carried out at a temperature of 2 5 0-3 5 0 ° C for 5-30 seconds; the preferred processing conditions are 10-20 seconds at a temperature of 3 0 0 ° C. ; Oxygen plasma 3 processing steps can be carried out directly in the same chemical vapor deposition machine as the first dielectric material layer 2, or after the first dielectric material layer 2 is deposited, another suitable one is selected. Plasma treatment machine. Referring to FIG. 1C, a second dielectric material layer 4 is formed on the first dielectric material layer 2 after being treated with the oxygen plasma 3. The thickness of the second dielectric material layer 4 is about 50 ~ loooo angstroms. It can be a silicon-containing dielectric material, preferably such as ^^ 八 "
實施例二 參考第2圖，以如實施例一所述之方法及材料形成 一介電材料層2，及對第一介電材料層2進行氧電漿3處理 步驟，，本實施例中所使用的第一介電材料層2為碳= 矽，接著，在經過氧電漿3處理後第一介電材料層2上 電材i料乂 4’ ’人其厚度約為5°〜3〇°埃’塗佈曰溫度為 再於弟一介電材料層4,之上塗佈一 κ值低於 的低介電常數材料層5,其厚度約為5〇〜7〇〇 塗佑·！ 亦為2 2 - 2 7°C。 、文师溫^In the second embodiment, referring to FIG. 2, a method and a material as described in the first embodiment are used to form a dielectric material layer 2, and an oxygen plasma 3 treatment step is performed on the first dielectric material layer 2. The first dielectric material layer 2 used is carbon = silicon, and then, after being treated with the oxygen plasma 3, the dielectric material layer 4 ′ on the first dielectric material layer 2 has a thickness of about 5 ° to 30 °. The temperature of the coating is that a low dielectric constant material layer 5 with a lower κ value is coated on the first dielectric material layer 4, and the thickness is about 50 ~ 700. It is also 2 2-2 7 ° C. Wen Wen
適用於本實施例的第二介電材料層4,為用以拇 ”電材料層2與低介電常數材料層5的黏合促進劑7 有機矽氧烷，較佳的為由陶氏化學公司（The D〇w ” °為 ^^„^cal corapany)所提供的商品為Ap4〇〇〇的材 電常數材料層5則為S I L K。 ^ 低介The second dielectric material layer 4 suitable for this embodiment is an adhesion promoter 7 for organizing the "electrical material layer 2" and the low dielectric constant material layer 5 "organosiloxane", preferably from The Dow Chemical Company. (The D〇w "° is ^^„ ^ cal corapany) The material provided by the company is Ap4OO00, and the material constant layer 5 is SILK. ^ 低 介
發明說明（5) 例 第3圖為漏電流的測試圖，复 所製得之成品的測試結果，曲、中為本發明實施例 二相同材料的電路姓 =6為使用與本發明實施 第二介雷；°構第一介電材料層 八電材料芦4 ΐ低介電f數材料層’，，曲線6的第 介電材”除布包含氧電衆處理步驟以外，其他所使用 的材料皆：將：明實施例二所述相同。由此結果可以得知 未使用氧電水处理的介電材料層，由於層間的黏合性不 足，其漏電流曲線6明顯高於經氧電漿處理所得成品之曲 線7 0 ,綜上所述，本發明的創新與特徵處乃在於：利用氧電 聚處理以在破化矽介電材料層中提供氧離子’以增進盆鱼 形成在其上的介電材料層的黏合性’ 0此將低由於介電材 料層間黏合不佳所造成的漏電流現象。此外’本發明的氧 電聚處理以提供氧離子的步驟，可直接在形成碳化矽介雷 材料層的化學氣相沉積機台内執行，胃於實施，且功效顯 之 者。本發明雖然已以數較佳實施例揭露如上，然並非企圖 以之限本發明之範圍，任何熟悉此技術領域者，在不脫0離 本發明之精神範圍之内，當可做各種更動與潤飾。本發明 專利保護範圍當視如附之申請利範圍所界定者為準二Explanation of the invention (5) Example 3 is a test chart of leakage current, and the test results of the finished product are reproduced. Qu and Zhong are circuit materials of the same material in Example 2 of the present invention. Surname = 6 is the second used in the implementation of the present invention. Dielectric; structure the first dielectric material layer; eight dielectric materials; reed 4; low-dielectric f-number material layer; "the sixth dielectric material of curve 6"; except that the cloth includes oxygen-oxygen processing steps; other materials used Both: will be the same as described in the second embodiment. From this result, it can be seen that the dielectric material layer not treated with oxygen electric water has a leakage current curve 6 which is significantly higher than that treated with oxygen plasma due to insufficient adhesion between the layers. The curve 70 of the finished product is summarized. In summary, the innovation and feature of the present invention is that the oxygen electropolymerization process is used to provide oxygen ions in the broken silicon dielectric material layer to promote the formation of potfish on it. Adhesiveness of the dielectric material layer '0 This will reduce the leakage current phenomenon caused by poor adhesion between the dielectric material layers. In addition, the step of the oxygen electropolymerization treatment of the present invention to provide oxygen ions can directly form the silicon carbide dielectric Chemical vapor deposition machine for thunder material layer The implementation of the internal control, the implementation of the stomach, and the effect is obvious. Although the present invention has been disclosed above with several preferred embodiments, it is not intended to limit the scope of the present invention. Anyone who is familiar with this technical field will not depart from this. Within the spirit of the invention, various modifications and retouching can be done. The scope of patent protection of the present invention shall be determined by the scope of the attached application.
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