JPS60260959A - Photoreceptive member - Google Patents

Abstract

PURPOSE:To form an image with interferential monochromatic light by successively forming an a-SiGe layer, a photoconductive a-Si layer and an antireflection surface layer on a support having a specified surface shape and by making the distribution of Ge in the a-SiGe layer ununiform in the direction of the thickness. CONSTITUTION:The 1st layer 1002 contg. a-SiGe, the 2nd layer 1003 contg. photoconductive a-Si and an antireflection surface layer 1005 are successively formed on the surface of a support 1001 to form a multilayered photoreceptive film 1000. The support 1001 has a large number of projections on the surface so that secondary peaks are superposed on principal peaks in a cross-section when the support is cut at a prescribed position. The distribution of Ge atoms in the layer 1002 is made ununiform in the direction of the thickness. The projections on the surface of the support 1001 are arranged regularly or periodically and are primarily close to one another in shape. The secondary peaks of the projections may be symmetric or asymmetric with respect to the principal peaks. The resulting photoreceptive member is suitable for use in the formation of an image with interferential light because interference fringes are not produced, and the member produces no spot during reversal development.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Conventional technology]

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record an image by interrupting processes such as transfer and fixing. Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm).

In particular, electrophotographic light-receiving members suitable for use with semiconductor lasers have a much better consistency in their photosensitivity region than other types of light-receiving members. It has a high Vickers hardness and is socially non-polluting, such as those disclosed in JP-A No. 54-86341 and JP-A No. 56-Sho.
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as rA-s4J) disclosed in Japanese Patent No. 83746 is attracting attention.

Of course, if the photoreceptive layer is a single-layer A-St layer, in order to maintain its high photosensitivity and ensure a dark resistance of 1017 Ωcm or more, which is required for electrophotography, hydrogen atoms and halogen atoms are required. In addition to these, it is necessary to structurally contain poron atoms in a specific amount range in a controlled manner in the layer, so layer formation must be strictly controlled. There are considerable limitations on tolerances in component design.

For example, Japanese Patent Laid-Open No. 51-121743 is an example of a device that can expand this design tolerance and make effective use of high light sensitivity even if the dark resistance is low to some extent.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Laid-open No. 172, the photoreceptive layer may have a two-layer structure in which layers having different conductivity characteristics are laminated, and a depletion layer may be formed inside the photoreceptive layer, or 5
No. 2178, No. 52179, No. 52180, No. 58
No. 159, No. 58160, No. 58161 1': As described in the following publications, a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer and/or on the upper surface of the photoreceptive layer is used. For this reason, light-receiving members with apparently increased dark resistance have been proposed.

Through such proposals, the A-3i-based light-receiving material has made dramatic advances in its commercialization design tolerances, ease of manufacturing management, and productivity, and is expected to be commercialized. The speed of development towards this goal is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects, and particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photosensitive layer decreases, so the above-mentioned interference phenomenon becomes remarkable.

This point will be explained with reference to the drawings.

FIG. 1 shows the weight of light incident on a certain layer constituting the light-receiving layer of a light-receiving member. and reflected light R8 reflected at the upper interface 102,
The reflected light R2 reflected at the lower interface 101 is shown.

If the average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is uneven due to the difference in thickness, then 1 reflected light R1, R2 is 2nd = m input (m is an integer, the reflected lights strengthen each other) and 2nd Depending on which of the following conditions is met, the amount of absorbed light and transmitted light of a certain layer will change.

In a multilayered light-receiving member, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed on the transfer member, causing a defective image.

As a method to eliminate this inconvenience, the surface of the support is diamond-cut to provide unevenness of ±500 to ±10,000 to form a light-scattering surface (for example,
162975), a method of providing a light absorption layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carbon, colored pigments, or dyes in a resin (for example, JP-A-57-165845); A method of providing a light-scattering and anti-reflection layer on the surface of an aluminum support by subjecting the surface of the support to a satin-like alumite treatment or by sandblasting to provide fine grain-like irregularities (e.g., Japanese Patent Laid-Open No. 16554/1983) ) etc. have been proposed.

Unfortunately, these conventional methods have not been able to completely eliminate the interference fringe pattern that appears on images.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still exists, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This was a cause of a decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment-dispersed resin layer is provided, when forming the A-3t layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed light-receiving layer is significantly deteriorated. 3i
There are disadvantages such as being damaged by the plasma during formation, reducing the original absorption function, and adversely affecting the subsequent formation of the A-3i photosensitive layer due to deterioration of the surface condition.

In the case of the third method of irregularly roughening the support surface, the third method
As shown in the figure, for example, part of the incident light I0 is reflected on the surface of the light-receiving layer 302 and becomes reflected light R, and the rest enters the inside of the light-receiving layer 302 and becomes transmitted light I. Become.

A portion of the transmitted light I is scattered on the surface of the support 302 and becomes diffused light Kl, 2 + K3...
・The rest is specularly reflected and becomes reflected light R2, and a part of it becomes emitted light R3 and goes outside. Therefore, since the emitted light R3, which is a component that interferes with the reflected light R1, remains, the interference fringe pattern cannot be completely erased.

Furthermore, in order to prevent interference and multiple reflections inside the light-receiving layer, the diffusivity of the surface of the support 301 is increased.
Another drawback was that the resolution was reduced because light was diffused within the light-receiving layer, causing halation.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
Reflected light R2 on the surface of layer 402.

The reflected light RI on the second layer and the specularly reflected light R3 on the surface of the support 401 interfere with each other, resulting in an interference fringe pattern depending on the thickness of each layer of the light-receiving member. Therefore, in a multilayer light-receiving member, it is impossible to completely prevent interference fringes by irregularly roughening the surface of the support 401.

Furthermore, when the surface of the support is irregularly roughened by methods such as sandblasting, the degree of roughness varies greatly between lots, and even within the same lot, the degree of roughness is uneven, making it difficult to manufacture. Management was not good. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501, so that the inclined surface of the unevenness of the support 501 and the inclined surface of the unevenness of the light-receiving layer 502 become parallel. .

Therefore, in that part, the incident light enters 2ndl-m or 2nd1-(m10), and becomes a bright part or a dark part, respectively. In addition, for the entire photoreceptive layer, the layer thickness d of the photoreceptive layer is
, d2. d3. Because of the different characteristics of d4, a striped pattern of light and dark appears.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development. , 7 Another object of the present invention is to provide a light-receiving member that allows digital image recording using electrophotography, especially digital image recording with halftone information to be performed clearly, with high resolution, and with high quality. be.

Yet another object of the present invention is to provide a light-receiving member having high photosensitivity, high signal-to-noise ratio characteristics, and good electrical contact with the support.

Another object of the present invention is to provide 11' on the surface of the light-receiving member.
Another object of the present invention is to provide a light-receiving member that can reduce light reflection and efficiently utilize incident light.

[Summary of the invention]

The light-receiving member of the present invention includes a support having a surface having a large number of convex portions whose cross-sectional shape at a predetermined cutting position is a convex shape in which a main peak and a sub-peak are superimposed; silicon atoms and germanium atoms; A first layer made of an amorphous material containing silicon atoms, a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity, and a surface layer having an antireflection function on the support side. A light-receiving member having a multi-layered light-receiving layer provided in this order; characterized in that the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

In the present invention, a light-receiving layer having a multilayer structure is provided on a support (not shown) having an uneven shape smaller than the required resolution of the apparatus, along the slope of the unevenness, and is enlarged as shown in FIG. 6(A). As shown in the figure, since the layer thickness of the second layer 602 changes continuously from d5 to d6, the interface 603 and interface
and have a tendency toward each other. Therefore, the coherent light incident on this short range pattern causes interference in the short range pattern, producing a minute interference fringe pattern.

Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Light I. Since the traveling directions of the reflected light R1 and the emitted light R3 are quite different, when the interfaces 703 and 704 are parallel (r (
B) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), when the pair of interfaces are non-parallel (A) than when they are parallel (B), even if there is interference, the difference in brightness of the interference fringe pattern is ignored. be as small as possible. As a result, the amount of light incident on the minute portions is averaged.

As shown in Figure 6, this is true even if the thickness of the second layer 602 is macroscopically non-uniform (d?≠d8), so the amount of incident light becomes uniform over the entire layer area. (r in Figure 6
(D) See J).

Furthermore, to describe the effect of the present invention in the case where the light-receiving layer has a multilayer structure and coherent light is transmitted from the irradiation side to the second layer, as shown in FIG. I. On the other hand, there are reflected lights R,, R7, R3, R4, and R1.

Therefore, in each layer, what was explained above with reference to FIG. 7 occurs.

Each layer interface within the "-1 microportion acts as a kind of slit, where diffraction development occurs. Therefore, the effect of interference in each layer appears as a product of interference due to the difference in layer thickness and interference due to diffraction at the layer interface.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Further, interference fringes generated within the minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Moreover, even if it appears in the image, it will not cause any substantial trouble because it is below the resolution of the eye.

In the present invention, it is preferable that the uneven inclined surface has a mirror finish in order to reliably align the reflected light in one direction.

The size of the minute part suitable for the present invention (one period of the uneven shape) is: If the radius of the irradiated light is L, then the intersection ≦L
It is.

In addition, in order to more effectively achieve the object of the present invention, the difference in layer thickness (ds d6) in a minute portion should be expressed as d, -d, 〉-(n : refractive index of the second layer 602)n.

In the present invention, at least any two layer interfaces are in a nonparallel relationship within the layer thickness of a minute portion of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"). The layer thickness of each layer is controlled within the microcolumn, but as long as this condition is satisfied, any two layer interfaces may be in a parallel relationship within the microcolumn.

(+1) It is desirable that the layers forming parallel layer interfaces be formed to have a uniform layer thickness over the entire area so that the difference in layer thickness at any two positions is as follows.

In order to more effectively and easily achieve the object of the present invention, the first layer containing silicon atoms and germanium atoms and the second layer containing silicon atoms constituting the photoreceptive layer are formed by:
The plasma vapor phase method (PCVD method), photo-CVD method, and thermal CVD method are employed because the layer thickness can be accurately controlled at an optical level.

As methods for processing the support to achieve the object of the present invention, chemical methods such as chemical etching and electroplating, physical methods such as vapor deposition and sputtering, and mechanical methods such as lathe processing can be used. However, in order to easily manage production, a mechanical processing method such as a lathe is preferred.

For example, when machining a support with a lathe, a cutting tool having a 7-shaped cutting edge is fixed at a predetermined position on a cutting machine such as a milling machine or a lathe, and the cylindrical support is machined according to a program designed in advance according to the desired results. By regularly moving in a predetermined direction while rotating, the surface of the support is accurately cut to form a desired uneven shape, pitch, and depth. The linear protrusion created by the unevenness formed by such a cutting method has a chain line structure centered on the central axis of the cylindrical support. The chain line structure of the protrusion is
It may have a double or triple chain line structure, or a crossed spiral structure.

Alternatively, a slow line drawing along the central axis may be introduced in addition to the chain line structure.

It is preferable that the convex portions within a predetermined cross section of the support of the present invention have the same shape in order to enhance the effects of the present invention and to facilitate processing control.

Further, the convex portions are preferably arranged regularly or periodically in order to enhance the effects of the present invention. Furthermore, it is preferable that the convex portion has a plurality of sub-peaks in order to further enhance the effect of the present invention and improve the adhesion between the light-receiving layer and the support.

In addition to each of these, in order to efficiently scatter incident light in one direction, the convex portion may be symmetrical (FIG. 9(A)) or asymmetrical (FIG. 9(B)) about the main peak. It is preferable that they be unified. However, in order to increase the degree of freedom in controlling the processing of the support, it is better to have both of them mixed together.

In the present invention, each dimension of the unevenness provided on the surface of the support in a controlled manner is set to 1L in consideration of the following points so that the object of the present invention can be effectively achieved.

That is, firstly, the A-3i layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which it is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the A-3i layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the recesses on the surface of the support is preferably 500 gm
~0,31Lm, more preferably 200p,m
” 1 g m, optimally 5071 m to 5 IL m.

The maximum depth of the recess is preferably 0.1 gm to 5 g.
m, more preferably 0.31 Lm to 3 pm, most preferably 0.6 gm to 2 μm. When the pitch and maximum depth of the recesses on the support surface are within the above range, the slope of the 11:1 slope of the four parts (or linear protrusions) is preferably 1 degree to 20 degrees, more preferably 3 degrees. ~15 degrees,
The optimum angle is preferably 4 degrees to 10 degrees.

In addition, there is no restriction on the layer pressure of each layer deposited on such a support.
The maximum layer thickness difference based on is preferably 0.
1 gm to 2 μm, more preferably 0.1 gm-1,57
zm, preferably 0.2 gm to Igm.

The light-receiving layer in the light-receiving member of the present invention is a first layer made of an amorphous material containing silicon atoms and germanium atoms.
Because it has a multilayer structure in which the layer, the second layer composed of an amorphous material containing silicon atoms and exhibiting photoconductivity, and the surface layer having an antireflection function are provided in order from the support side, Shows extremely excellent electrical, optical, photoconductive properties, electrical pressure resistance, and use environment characteristics.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. Therefore, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution.

In summer, the light-receiving member of the present invention has high photosensitivity in the entire visible light region, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it has excellent matching with semiconductor lasers,
Moreover, the light response is fast.

Hereinafter, the light receiving member of the present invention will be explained in detail according to the drawings.

FIG. 1θ is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention.

A light-receiving member 1004 shown in FIG. 10 has a light-receiving layer 1000 on a support 1OO1 for the light-receiving member.

The photoreceptive layer 1000 is a-3i (H,X) containing germanium atoms (hereinafter ra-3
iGe (H,X)J (abbreviated))
A layer structure in which a second layer (S) 1003 consisting of a layer (G) 1002 and a-3i (H, (where X represents a halogen atom). 1st
The germanium atoms contained in the layer (G) 1002 are continuous in the layer thickness direction of the first layer (G) 1002 and are located on the side opposite to the side on which the support 1001 is provided. It is contained in the first layer (G) 1002 so that it is more distributed on the side of the support 1001 than on the side (the surface layer 1005 side of the photoreceptive layer 1000).

In the light-receiving member of the present invention, the distribution state of germanium atoms contained in the first layer (G) takes the above-mentioned IP state in the layer thickness direction, and is parallel to the surface of the support. It is desirable to have a uniform distribution state in the in-plane direction.

In the present invention, the second layer (G) provided on the first layer (G)
The layer (S) does not contain germanium atoms, and by forming a light-receiving layer with such a layer structure, it can be used for the entire range from relatively short wavelengths to relatively long wavelengths, including the visible light region. It is obtained as a light-receiving member that has excellent photosensitivity to light having a wavelength of .

Also, the proportion of germanium atoms in the first layer (G) is 4
In the J state, germanium atoms are continuously distributed in the entire layer region, and the concentration C of germanium atoms in the layer thickness direction decreases from the support side toward the second layer (S). , has excellent affinity between the first layer (G) and the second layer (S), and as described later, by extremely increasing the distribution concentration C of germanium atoms at the support side end, When a semiconductor laser or the like is used, the first layer (G) can substantially completely absorb light on the long wavelength side, which is almost completely absorbed by the second layer (S). Interference due to reflection from the support surface can be prevented.

Further, in the light-receiving member of the present invention, the first layer (G) and the amorphous material forming the layer (S) have a common constituent element of silicon atoms. As a result, chemical stability is sufficiently ensured at the laminated interface.

11 to 19 show typical examples of the distribution state of germanium atoms contained in the F;l layer (G) of the light-receiving member of the present invention in the layer thickness direction.

In FIGS. 11 to 19, the horizontal axis represents the If3 concentration C of germanium atoms, the vertical axis represents the layer thickness of the first layer (G), and tB represents the thickness of the first layer (G) on the support side. tT indicates the position of the end surface of the layer (G) on the opposite side to the support side. That is, the first layer (G) containing germanium atoms is formed from the tB side toward the tT side.

FIG. 11 shows a first typical example of the distribution state of germanium atoms contained in the first layer (G) in the layer thickness direction.

In the example shown in FIG. 11, the surface on which the first layer (G) containing germanium atoms is formed and the first layer (G)
) from the interface position tB in contact with the surface of 1. Up to the position of gel manila 1, the distribution concentration C of atoms takes a constant value of 01, while gel manila 1 and the first layer where atoms are formed (
G), and the concentration is gradually and continuously decreased from the position t1 to the concentration C2 up to the interface position tr. At the interface position tT, the distribution concentration C of germanium atoms is C
It is considered to be 3.

In the example shown in FIG. 12, the distribution concentration C of the contained germanium atoms gradually and continuously decreases from the concentration C4 from the position tB to the position D, and reaches the concentration C9 at the position tT. forming a state.

In the case shown in FIG. 13, from position tB to position t2, the distribution concentration C of germanium atoms is a constant value of concentration C6, and gradually decreases continuously between position t2 and position t1. At the position tT, the distribution concentration C is substantially zero (substantially zero here means that it is less than the detection limit amount).

In the case shown in FIG. 14, the distribution concentration C of germanium atoms is continuously gradually decreased from the concentration C11 from the position t to the position t□, and becomes substantially zero at the position tr.

In the example shown in FIG. 15, the fraction I of germanium atoms is
H5 concentration C is a constant value with concentrations C and J between position tB and position t3, and at position t, concentration CIO
It is said that Between position t3 and position tT, the distribution concentration C
is decreased linearly from position t3 to position tT.

In the example shown in FIG. 16, the distribution concentration C is at the position t
From position B to position Wt4, the concentration C1l takes a constant value, and from position t4 to position tT, the distribution state is such that the concentration decreases linearly from C02 to C13.

In the example shown in FIG. 17, from position tB to position tT, the distribution concentration C of germanium atoms is the concentration CI4.
It decreases in a linear function so as to substantially reach zero.

In FIG. 18, from position tB to position t, the distribution concentration C of germanium atoms is linearly reduced from concentration C15 to concentration CI6, and between position t1 and position tT, An example is shown where the list price is for concentration c+b.

In the example shown in FIG. 19, the distribution concentration C of germanium atoms is a concentration CI7 at a position tB, and is initially slowly decreased from this concentration CI'7 until reaching a position t6, and then at a position t (= Near J, the concentration is rapidly decreased to C18 at position t6. Between positions t6 and t7, the concentration is initially decreased rapidly, and then gradually decreased to position t7.
The concentration becomes CI9, and between position t7 and position meter 〇,
very slowly and gradually decreased at position t8,
The concentration reaches C2o.

Between position meter ○ and position t, the concentration is reduced from C20 to substantially zero according to a curve shaped as shown in the figure.

As described above with reference to FIGS. 11 to 19, some typical examples of the distribution state of germanium atoms contained in the first layer (G) in the layer thickness direction, in the present invention, the support On the body side, the gel manila 1 has a portion with a high distribution concentration C of atoms, and on the interface t□ side, the distribution concentration C
The first layer (G) is provided with a distribution state of germanium atoms having a portion which is considerably lowered on the support side.

The first layer (G) constituting the light receiving layer constituting the receiving member in the present invention is preferably a localized region (A) containing germanium atoms at a relatively high concentration on the support side as described above. ) is desirable.

In the present invention, the localized region (A) is
Explaining using the symbols shown in FIG. 9, it is desirable that the interface be provided within five angles from the interface position tT.

In the present invention, the localized region (A) may be the entire layer region (LT) from the interface position tB to the thickness of 5 mm, or may be a part of the layer region (L,). In some cases, it may be done.

Whether the localized region (A) is a part or all of the layer region (LT) is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

The localized region (A) is the distribution state of germanium atoms contained therein in the layer thickness direction.
The state is such that the maximum concentration Cmax is preferably 1,000 atomic cppm or more, more preferably 5,000 atomic cppm or less, and optimally 5,000 atomic cppm or less, relative to silicon atoms. Preferably, the layer is formed to obtain the desired result.

That is, in the present invention, germanium atoms containing 18
The layer thickness from the support side is within 5 corners (
The maximum value Cma of the distribution concentration in the layer region of the 5IL layer from tB
It is preferable that x exists.

In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amounts of hydrogen atoms and halogen atoms contained in the second layer (S) constituting the photoreceptive layer to be formed The sum (H+X) is preferably 1 to 40 atoms i%
, more preferably 5 to 30 atomci%, optimally 5 to 30 atomci%
It is desirable that the content be 25 atomic%.

In the present invention, the content of germanium atoms contained in the first layer may be determined as desired, or preferably l
-9,5X10'at.

mic ppm, more preferably 100-8×105a
tomic ppm, optimally 500-7X10Sa
It is desirable that the amount be tomic ppm.

In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light-receiving member to ensure that the desired properties are fully imparted to the light-receiving member.

In the present invention, the layer thickness TB of the first layer (G) is preferably 30A to 50K, more preferably 30A to 50K.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
It is desirable that the number is 0 p, more preferably 1 to 80 loci, and optimally 2 to 50 loci.

The sum of the layer thickness TB of the first layer (G) and the layer thickness T of the second layer (S) (TB + T) is determined by the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. It is determined as desired when layering the light-receiving member based on the organic relationship between the light-receiving member and the light-receiving member.

In the light-receiving member of the present invention, the numerical range of (TB+T) is preferably 1 to 100p, more preferably 1 to 80k, and most preferably 2 to 50p.

In a more preferred embodiment of the present invention, the above-mentioned layer thickness TB and layer thickness T are appropriately selected to satisfy the relationship TB/T≦1. It is desirable that

In selecting the numerical values of layer thickness TB and layer thickness T in the case described above, it is more preferable that TB/T≦0.9. Optimally, it is desirable that the values of layer thickness TB and layer thickness T be determined so that the relationship TB/T≦0.8 is satisfied.

In the present invention, the content of germanium atoms contained in the first layer ('G) is 1×105105ato
In the case of PPm or more, it is desirable that the layer thickness TB of the first layer (G) is made quite thin, preferably 3
It is desirable that the amount is 0 g or less, more preferably 25 liters or less, and optimally 20 liters or less.

In the present invention, if necessary, the first
Specific examples of the halogen atoms (X) contained in the layer (G) and the second layer (S) include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. It can be mentioned as such.

In the present invention, the first layer (G) composed of a-3iGe (H, done by law. For example, a-3iGe (H,X
) Basically, to form the first layer (G) composed of
e The raw material gas for supply and, if necessary, the raw material gas for introducing hydrogen atoms (H) and/or the raw material gas for introducing halogen atoms (X) are kept at the desired gas pressure in a deposition chamber whose interior can be reduced in pressure. introducing a glow discharge into the deposition chamber;
A-3iGe (H,
) may be formed. In addition, when forming by sputtering method, for example, a target made of Si and a target made of Ge are formed in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases. When performing sputtering using a target containing a mixture of Sj and Ge, a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) may be added to the deposition material for sputtering as necessary. It would be better to introduce it.

Substances that can be used as raw material scraps for supplying Si used in the present invention include SiH4,5i2H (,, Si3
Silicon hydride (silanes) in a gaseous state or capable of forming into a scum, such as He, Si4H+ o, etc., can be effectively used.
SiH4 and Si2H6 are preferred from the viewpoint of good supply efficiency.

As a substance that can be used as a raw material gas for supplying Ge, G e
H4, Ge7 H,, Ge3 H8, Ge4H,. ,G
e, H, 2, Ge, H, 4, Ge.

For H1, germanium hydride in the form of GeBHIB, Ge, H2°, or in the form of scum can be effectively used, and in particular, it is easy to handle during layer creation work and has good Ge supply efficiency. GeH4, Ge2
Preferred examples include H6 and Ge3-H8.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into

Furthermore, silicon hydride compounds containing halogen atoms, which are in a gaseous state or can be gasified and which have silicon atoms and halogen atoms as constituent elements, can also be mentioned as effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, BrF, CIF, ClF3. BrF5. BrF
3. IF3. Examples include interhalogen compounds such as IF5° ICU and IBr.

As silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, specifically, for example, S
iF4, Si2 F6, Si0 sentence 0, S i B r
Silicon halides such as No. 4 are preferred.

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, hydrogen is used as a raw material gas capable of supplying Si together with a raw material gas for supplying Ge. a-3iGe containing halogen atoms on a desired support without using silicon oxide gas
It is possible to form a first layer (G) consisting of:

According to the glow discharge method, the first layer containing halogen atoms (
G), basically, for example, a predetermined mixture of silicon halide, which will be the raw material gas for supplying Si, germanium hydride, which will be the raw material gas for Ge supply, and gases such as Ar, F2, He, etc. on the desired support by creating a plasma atmosphere of these gases by generating a glow discharge and forming a plasma atmosphere of these gases. Although the first layer (G) can be formed, hydrogen gas or a silicon compound containing hydrogen atoms is added to these gases in order to easily control the introduction ratio of hydrogen atoms. A layer may also be formed by mixing a desired amount of these gases.

Moreover, each gas may be used not only as a single species but also as a mixture of a plurality of them at a predetermined mixing ratio.

A first layer (H,X) of a-5iGe (H,
To form G), for example, in the case of a sputtering method, two targets, one made of St and one made of Ge, or a target made of St and Ge are used, and these are placed in a desired gas plasma atmosphere. In the case of sputtering and -ion blating method, for example,
Polycrystalline silicon or single-crystal silicon and polycrystalline germanium or single-crystal germanium are each housed in an evaporation port as evaporation sources, and the evaporation sources are heated by a resistance heating method, an electron beam method (EB method), or the like to emit flying evaporation. This can be done by passing an object through a desired gas plasma atmosphere.

At this time, in order to introduce halogen atoms into the layer φ formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to introduce the gas to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, such as F2, or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, halogen compounds marked with "-" or silicon compounds containing halogen are effectively used as raw material gases for introducing halogen atoms, but in addition, HF, HCu, HBr, Hydrogen halides such as HI, 5iH2F7.5iH7I2, SiH2C, 5iHc 3.5i) (halogen-substituted silicon hydrides such as 2Br2.5iHBr3, and GeHF, Ge
F2 F7.

GeF3 F, GeHCl3, GeH2C sentence 2, Ge
HBr3, GeHBr3, GeF2Br2.

GeF3 Br, GeHl, , GeF2 I2, Ge)
(Halide containing a hydrogen atom as one of its constituent elements such as hydrogenated germanium halide such as 3I, GeF4, G
eC1, GeBr4, GeI4. Germanium halides such as GeF2, Ge0, GeBr2, GeI2, and other gaseous or gasifiable substances can also be mentioned as effective starting materials for forming the first layer (G).

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer when forming the first layer (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

To structurally introduce hydrogen atoms into the first layer (G),
In addition to the above, H2, or SiH4, Si, H et al., 5i3
Silicon hydride such as HB・5i4H1o with germanium or a germanium compound for supplying Ge, or with G
eH,,Ge2H,,,Ge3 HB,Ge4'H,.

,Ge5H17,Ge6H14-Ge71(+b-Ge
This can also be carried out by causing germanium hydride such as aHIo or Ge9H2° and silicon or a silicon compound for supplying St to coexist in a deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the first layer (G) constituting the photoreceptive layer to be formed, or the amount of hydrogen atoms and halogen atoms The sum of the amounts (H+X) is preferably 0.01 to 40
atomic%, more preferably 0.05-30 a
tomic%, optimally 0.1 to 25 atoms
It is desirable to set it to jc%.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( The amount of the starting material used to contain X) introduced into the deposition system, the discharge force, etc. may be controlled.

In the present invention, the second
To form the layer (S), a starting material [second This can be carried out using the same method and conditions as in the case of forming the first layer (G) using the starting material (It) for forming the layer (S).

That is, in the present invention, to form the second layer (S) composed of a-3t(H,X), for example, a glow discharge method,
This is accomplished by a vacuum deposition method using a discharge phenomenon such as a sputtering method or an ion plate ink method. For example, in order to form the second layer (S) composed of a-3i (H, Along with the raw material gas for supply, if necessary, a raw material gas for introducing hydrogen atoms (H) and/or for introducing halogen atoms (X),
The mixture is introduced into a deposition chamber whose interior can be reduced in pressure to generate a glow discharge within the deposition chamber, thereby forming a layer consisting of a-3i (H, Just let it happen.

In addition, when forming by sputtering method, for example, Ar
, a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) when sputtering Tarquent made of Si in an atmosphere of an inert gas such as He or a mixed gas containing these gases. may be introduced into the deposition chamber for sputtering.

The thickness of the surface layer 1005 having an antireflection function is determined as follows.

When the refractive index of the material of the surface layer is n and the wavelength of the irradiated light is d, the thickness d of the surface layer having an antireflection function is preferably as follows.

Further, as the material for the surface layer 1005, a material having a refractive index of n=stone is optimal, where na is the refractive index of the second layer on which the surface layer is deposited.

Considering such optical conditions, the thickness of the antireflection layer is preferably 0.05 to 2 gm, assuming that the wavelength of the exposure light is in the wavelength range from near infrared to visible light. be.

In the present invention, materials that can be effectively used for the surface layer 1005 having an antireflection function include, for example, M
gF2, A120A, Z ro2.

TiO2ZnS, Ce07, CaF2. 5i07,
SiO, Ta, O! ,,AlF2,NaF.

Inorganic fluorides such as Si3N4, inorganic oxides and inorganic nitrides,
Alternatively, polyvinyl chloride, polyamide resin, polyimide resin, vinylidene fluoride, melamine resin, epoxy resin,
Examples include organic compounds such as phenolic resin and cellulose acetate.

In order to achieve the purpose of the present invention more effectively and easily, these materials can be used by vapor deposition method, sputtering method, plasma vapor deposition method (PCVD method), optical CVD method, thermal CVD horn;
A coating method is used.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, An, Cr, Mo, Au,
Nb, Ta, V, Ti.

Examples include metals such as P't and Pd, and alloys thereof.

Examples of the electrically insulating support include polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl keratide, poly(vinylidene 1M),
Films or sheets of synthetic resins such as polystyrene and polyamide, glass, ceramics, paper, etc. are usually used.

Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is a crow, its surface contains NiCr, A-texture, Cr, Mo, Au, and Ir.

Nb, Ta, V, Ti, Pt, Pd, In2O3.

Conductivity is imparted by providing a thin film made of 5n02, ITO (In203 +5n02), etc.
Or if it is a synthetic resin film 1 such as a polyester film, NiCr, A-type, Ag, Pb.

Zn, Ni, Au, Cr, Mo, Ir, Nb.

Vacuum deposition of metal thin films of Ta, V, Ti, PL'$,
Provided on the surface by electron beam evaporation, sputtering, etc.
Alternatively, the surface is laminated with the metal to impart conductivity to the surface.

The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the light receiving member 1004 in FIG. 10 may be used as a light receiving member for electrophotography. In the case of continuous high-speed copying, it is desirable to use an endless belt or a cylindrical shape.

The thickness of the support is appropriately determined so as to form a desired light-receiving member, but if flexibility is required as a light-receiving member, the support can sufficiently function as a support. It is made as thin as possible within this range. However, in such a case, the number is preferably 10 or more from the viewpoint of manufacturing and handling of the support, mechanical strength, etc.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be described.

FIG. 20 shows an example of a light-receiving member manufacturing apparatus.

In the figure, gas cylinders 2002 to 2006 are electrically sealed with raw material gas for forming the light-receiving member of the present invention. abbreviated as) po/pe, 20
03 is GeH4 gas (purity 99.999%, hereinafter referred to as Ge
H4 gas) cylinder, 2004 is SiF4 gas (purity 9
9.99%, hereinafter abbreviated as SiF4) cylinder, 2005 to He gas (99.999% purity) cylinder, 2006 to H gas cylinder.
2 gas (purity 99.999%) cylinder.

In order to flow these gases into the reaction chamber 2001, the valves 2022 to 2o26 of the gas cylinders 2002 to 2006,
Make sure the leak valve 2035 is closed,
In addition, inflow valves 2012 to 2016 and outflow valve 201
7 to 2021, confirm that the auxiliary valves 2032 and 2033 are open, and first open the main valve 2034 to open the reaction chamber 2001. and exhaust the inside of each gas pipe. Next, vacuum 3-t 2036 (7) Reading is about 5X10-'
When the torr is reached, the auxiliary valves 2032 and 2033
° Close the outflow valves 2017-2021.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 2037, Si
H4 gas, GeH4 gas from gas cylinder 2003, 20
H2 gas valve from 06 2022.2023.202
Open 6 and check the outlet pressure gauge 2027, 2028, 2031
Adjust the pressure of the inlet valve 2012. to 1Kg70m2.
2013 and 2016 are gradually opened to flow into the mass flow controllers 2007, 2008, and 2011, respectively. Subsequently, outflow valve 20F, 2018.2021.
The auxiliary valves 2032 and 2033 are gradually opened to allow each gas to flow into the reaction chamber 2001. SiH at this time,
+Gas flow rate, GeH.

Adjust the outflow valve 2017.2018.2021 so that the ratio of the gas flow rate and the H2 gas flow rate becomes the desired value, and also check the reading of the vacuum gauge 2036 so that the pressure inside the reaction chamber 2001 becomes the desired value. while adjusting the opening of the main valve 2034. After confirming that the temperature of the substrate 2037 is set to a temperature in the range of 50 to 400°C by the heater 2038, the electric power 2040 is set to the desired power to generate a glow discharge in the reaction chamber 2001. Germanium atoms contained in the layer are formed by gradually changing the opening of the valve 2018 manually or using an externally driven motor or the like to adjust the GeH gas flow rate according to a pre-designed gas change rate curve. control the distribution concentration of

The glow discharge is maintained for a desired time in the manner described above, and the first layer (G) is formed on the base 2037 to a desired layer thickness. At the stage where the first layer (G) has been formed to a desired layer thickness, the steps are as follows except for completely closing the outflow valve 2018 and changing the discharge conditions as necessary.
By maintaining glow discharge for a desired time under similar conditions and procedures, a second layer (S) substantially free of germanium atoms can be formed on the first layer (G).

Next, to deposit a surface layer on the second layer (S),
For example, you can replace a 2006 hydrogen (H2) gas cylinder with argon (
The deposition apparatus is replaced with an Ar') gas cylinder, the deposition apparatus is cleaned, and the surface layer material is spread over the cathode electrode. After that, the material up to the second layer (S) is placed in the device, the pressure is reduced, and argon gas is introduced to generate glow discharge and sputter the surface layer material to form the surface layer to the desired thickness. Form.

During layer formation, it is desirable that the substrate 2037 be rotated at a constant speed by a motor 2039 in order to ensure uniform layer formation.

Examples will be described below.

Example I Al support (length L) 357 mm, diameter (r) 80
mm) was machined using a lathe to give the surface properties as shown in FIG. 21(B).

Next, using the deposition apparatus shown in FIG. 20, the conditions No.
, 101 and according to various operating procedures under the conditions shown in Table 2, the electrophotographic light-receiving member of A-3i was treated with the above-mentioned Al
It was deposited on the support -■-.

Note that the first layer a=(Si:Ge):H layer is Ge
The GeH4 and SiH4 mass flow controllers 2007.9 and 2008 were installed on a computer (HP9) to adjust the flow rates of H4 and SiH4 as shown in Figure 22.
845B).

Incidentally, the deposition of the surface layer 9 was carried out as follows.

After the second layer is deposited, the hydrogen (H2) cylinder is replaced with argon (A).
r) Replace with a gas cylinder, clean the deposition apparatus, and apply the surface layer material shown in Table 1, Condition No. 101, over the cathode electrode. The light-receiving member is installed, and the pressure inside the deposition apparatus is sufficiently reduced using a diffusion pump. Then turn off the argon gas to 0.
．． The surface material was sputtered by sputtering the surface material by causing a glow discharge with a high frequency power of 150 W and depositing a surface layer of Condition No. 101 in Table 1 on the support.

The surface state of the A-3t:H electrophotographic light-receiving member produced in this manner was as shown in FIG. 21(C).

A light-receiving member was produced in the same manner as above except that the surface layer was formed as shown in Table 1 Condition No. 102 to 122.

For the electrophotographic light-receiving member as described above, image exposure is performed using the image exposure device shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 8 m), and the exposed image is developed and transferred to obtain an image. Ta. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 2 Electrophotographic light receiving was carried out in the same manner as in Example 1 under the conditions shown in Tables 1 and 2 on the cylindrical AI support with the surface properties shown in FIGS. 27, 28, and 29. A member was formed.

The first layer (Si:Ge):H layer is configured by controlling the mass flow controllers 2007 and 2008 of GeH4 and 5iHQ using a computer (H
P9845B).

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 3 A light-receiving member for electrophotography was prepared in the same manner as in Example 1, except that the conditions shown in Table 3 were used on the cylindrical AI support with the surface properties shown in FIGS. 27, 28, and 29. was formed.

Note that the first layer a-(Si:Ge):H layer is GeH4
and the flow rate of SiH4 as shown in Figure 24.
eH and SiH4 mass flow controller 200
7 and 2008 on computer (HP9845B)
It was controlled by

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 4 A light-receiving member for electrophotography was prepared in the same manner as in Example 1, except that the conditions shown in Table 3 were used on the cylindrical AI support with the surface properties shown in FIGS. 27, 28, and 29. was formed.

Note that the first layer a-(Si:Ge):H layer is GeH
4 and SiH4 as shown in Fig. 25.
07 and 2oo8 on computer (HP9845B
) was controlled.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

[Effects of the Invention 1-1 As described in detail, the present invention is suitable for image formation using coherent neutral color light, easy to manage manufacturing, and reduces interference fringes that appear during image formation. It can simultaneously and completely eliminate the appearance of spots during pattern and reversal development, and it also has photosensitivity, high S/N ratio characteristics, and good electrical contact between the support and digital It is possible to provide a light-receiving member that is suitable for image recording, reduces light reflection on the surface, and can efficiently utilize incident light.

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram of a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIG. 9 is an explanatory diagram of the surface condition of a typical support. FIG. 10 is an explanatory diagram of the layer structure of the light receiving member. FIGS. 11 to 19 are explanatory diagrams for explaining the distribution state of germanium atoms in the first layer. FIG. 20 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 21 is an explanatory diagram of the surface state of the AI support used in Examples. FIG. 22 to FIG. 25 are explanatory diagrams showing changes in gas flow rate in Examples. FIG. 26 is an image exposure apparatus used in Examples. FIGS. 27, 28, Figure 29 shows the A
FIG. 3 is an explanatory diagram of the surface state of the I support. 1000......Photoreceptive layer 1001...A! ; L support 1002・
......First layer 1003... Second layer 1004... Light receiving member 1005...
......Surface layer 2601......Light receiving member for electrophotography 26
02... Semiconductor laser 2603...
...Fθ lens 2604...Polygon mirror 2605...Plan view of exposure device 2606...Side view of exposure device . Figure 3 Figure 4 Figure 5 Figure 7 (A) (B) (C) 1F? Ii1 w 8 Jump box 9 Figure 1 @ 11 ■ 12 Figure 13 Figure @ 1+ Figure penalty ``- 15 Figure 16 Figure 17 (2) Figure 18 - @ 13 Figure m 11 Figure (A) (B) (C) 447- Fig. 22 @ Listen (Evening) Fig. 23 Closed at Hours (Rei) 9 24 Fig. 25 Senkabun (Minute) Tan 2t Fig.

Claims (8)

[Claims] (1) A support whose surface has many convex portions whose cross-sectional shape at a predetermined cutting position is a convex shape in which a main peak and a sub-peak are superimposed; an amorphous material containing silicon atoms and germanium atoms; A first layer made of a transparent material, a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity, and a surface layer having an antireflection function were provided in this order from the support side. A light-receiving member comprising a multi-layered light-receiving layer; and a light-receiving member, wherein the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction. (2) The light receiving member according to claim 1, wherein the convex portions are regularly arranged. (3) The light receiving member according to claim 1, wherein the convex portions are arranged periodically. (4) The light-receiving member according to claim 1, wherein each of the convex portions has the same shape approximately in the −th order. (5) The light-receiving member according to claim 1, wherein the convex portion is characterized by a sub-peak. (6) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. (7) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. (8) The light receiving member according to claim 1, wherein the convex portion is formed by mechanical processing.