JPS60191268A - Photoreceptor member - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] The present invention is based on light (here, ultraviolet rays are light in the Buddhist sense).

The present invention relates to a light-receiving member that is sensitive to electromagnetic waves such as visible light, infrared rays, X-rays, γ-rays, etc.

More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record an image by performing processes such as transfer and fixing accordingly.

Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm).

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. For example, JP-A No. 54-86341 and JP-A-Sho 56-
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as rA-SiJ) disclosed in Japanese Patent No. 83746 has been attracting attention.

Of course, if the photoreceptive layer is a single-layer A-9i layer, in order to maintain its high photosensitivity and ensure a dark resistance of 1012 Ωcat or more required for electrophotography, hydrogen atoms and halogen atoms are required. In addition to these, it is necessary to structurally contain poron atoms in a specific amount range in a controlled manner in the layer, so layer formation must be strictly controlled. There are considerable limitations on tolerances in component design.

For example, Japanese Patent Application Laid-Open No. 54-121743 is an example of a device that can expand this design tolerance and make effective use of its high light sensitivity even if it is clogged or has a certain degree of low dark resistance.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Publication No. 172, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer.
No. 178, No. 52179, No. 52180, No. 581
59, No. 58160, and No. 58161, a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or/and on the upper surface of the photoreceptive layer is used. , a light-receiving member with apparently increased dark resistance has been proposed.

Through such proposals, A-9i-based photoreceptive materials have made dramatic progress in terms of commercialization design tolerances, ease of manufacturing management, and productivity, and are expected to be commercialized. The speed of development towards this goal is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference.

This interference phenomenon appears as a so-called interference fringe pattern in the formed visible image, causing image defects.

Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable.

This point will be explained with reference to the drawings.6 Figure 1 shows the light Io incident on a certain layer constituting the light-receiving layer of the light-receiving member, the reflected light R1 reflected at the upper interface 102,
The reflected light R2 reflected at the lower interface 101 is shown.

The average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is λ,
If the thickness of a certain layer is uneven with a gradual thickness difference of 1 or more n, the reflected lights R1 and R2 will be 2 n
d=mλ (m is an integer, reflected light strengthens each other) and 2 n
d = m +-) (m is an integer, reflected light weakens each other)
Depending on which of the following conditions is met, the amount of absorbed light and transmitted light of a certain layer will change.

In a multilayered light-receiving member, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

A method for solving this problem is to diamond-cut the surface of the support and provide unevenness of ±500λ to ± to roooool to form a light scattering surface (for example, in Japanese Patent Laid-Open No. 5
No. 8-162975) The surface of the aluminum support is treated with black alumite, or carbon or carbon is added to the resin.
A method of providing a light absorbing layer by dispersing colored pigments or dyes (for example, Japanese Patent Application Laid-open No. 57-165845), applying a satin-like alumite treatment to the surface of an aluminum support, or sandblasting to create fine grain-like irregularities. A method has been proposed in which a light scattering and antireflection layer is provided on the surface of a support (for example, Japanese Patent Application Laid-Open No. 16554/1983).

Unfortunately, these conventional methods have not been able to completely eliminate the interference fringe pattern that appears on images.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This was a cause of a decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when forming a colored pigment-dispersed resin layer, when forming the A-9i layer, the resin layer should be Ll /7-1111! S & 11
4b J, (Ito 1" JK south 'f-kl field b /"!-#EdMm quality is markedly degraded, the resin layer is damaged by the plasma during the formation of the A-9i layer, and the original absorption is lost. This has disadvantages such as a reduction in functionality and an adverse effect on the subsequent formation of the A-3i layer due to deterioration of the surface condition.

In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. teeth,
The light enters the inside of the light-receiving layer 302 and becomes transmitted light 11. A part of the transmitted light (1) is scattered on the surface of the support 302 and becomes diffused light (K1).2. 3...and
The rest is specularly reflected and becomes reflected light R2, and a part of it becomes emitted light R3 and goes outside. Therefore, since the emitted light R3, which is a component that interferes with the reflected light R1, remains, the interference fringe pattern cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so.

In particular, in a light-receiving member having a multilayer structure, as shown in FIG. 4, even if the surface of the support 401 is irregularly roughened,
The reflected light R2 on the surface of the first layer 402, the reflected light R1 on the second layer, and the specularly reflected light R3 on the surface of the support 401 interfere with each other, resulting in an interference fringe pattern depending on the thickness of each layer of the light-receiving member. occurs. Therefore, in a multilayer light-receiving member, it is impossible to completely prevent interference fringes by irregularly roughening the surface of the support 401.

Furthermore, when the surface of the support is irregularly roughened by methods such as sandblasting, the degree of roughness varies greatly between lots, and even within the same lot, the degree of roughness is uneven, making it difficult to manufacture. Management was not good. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface of the unevenness of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502.

Therefore, in that part, the incident light satisfies 2nd1=m incidence or 2ndl=(m+y2)λ, which becomes a bright part or a dark part, respectively. In addition, in the entire photoreceptive layer, the layer thickness di, d2. d3, due to the non-uniformity of the layer thickness, a light and dark striped pattern appears.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to manufacture and control.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

The light-receiving member of the present invention includes a first layer made of an amorphous material containing silicon atoms and germanium atoms, and a first layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity. In the light-receiving member, the light-receiving layer has a multilayer structure in which the second layer and the second layer are provided in order from the support side, and the light-receiving layer has one or more pairs of non-parallel interfaces within a short range, and the non-parallel It is characterized by a large number of parallel interfaces arranged in at least one direction within a plane perpendicular to the layer thickness direction.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

The present invention has a light-receiving layer having a multilayer structure along the slope of the unevenness on a support (not shown) having an uneven shape smaller than the required resolution of the device, and the light-receiving layer is shown in FIG. As shown in a partially enlarged view, since the layer thickness of the second layer 602 changes continuously from d5 to d6, the interface 603 and the interface 604 have a tendency toward each other. Therefore, the coherent light incident on this minute (short range) sentence is
Interference occurs in the minute portions, producing a minute interference fringe pattern.

Moreover, as shown in FIG. 7, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel, as shown in FIG. Since the traveling directions of the reflected light R1 and the emitted light R3 with respect to the incident light IQ are different from each other, the degree of interference is reduced compared to the case where the interface 703ζΔt04 is parallel (r (B) J in Fig. 7). .

Therefore, as shown in Figure 7 (C), when a pair of interfaces are non-parallel (r('A)J) than when they are parallel (r(B)J), even if they interfere, The difference in brightness of the interference fringe pattern becomes negligible. As a result, the amount of light incident on the minute portions is averaged.

This is true even if the thickness of the second layer 602 is macroscopically non-uniform (d7'=, dB) as shown in FIG. 6, so the amount of incident light is uniform over the entire layer area. (r in Figure 6)
(D) See J).

Furthermore, to describe the effects of the present invention in the case where coherent light is transmitted from the irradiation side to the second layer when the light-receiving layer has a multilayer structure, as shown in FIG. Reflected lights R1, R2, R3, R4, and R5 exist for IQ.

Therefore, in each layer, what is described above similar to FIG. 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Further, interference fringes generated within the minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Moreover, even if it appears in the image, it will not cause any substantial trouble because it is below the resolution of the eye.

In the present invention, the uneven inclined surface is desirably mirror-finished in order to reliably align the reflected light in one direction.

The size of the minute portion (one period of the uneven shape) suitable for the present invention is ≦L, where L is the spot diameter of the irradiation light.

In addition, in order to achieve the object of the present invention more effectively, the difference in layer thickness (dB-dB) in a minute portion should be dB-d8≧71 (n: the th It is desirable that the refractive index of the two layers 602 is as follows.

In the present invention, within the layer thickness of a microscopic portion of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"), at least any two layer interfaces are in a non-zero relationship. The layer thickness of each layer is controlled within the microcolumn, but as long as this condition is satisfied, any two layer interfaces may be in a one-row relationship within the microcolumn.

However, the layers forming parallel layer interfaces are formed to have a uniform layer thickness over the entire area so that the difference in layer thickness at any two positions is 2n (refractive index of the n' layer) or less. It is desirable that

The first layer containing silicon atoms and germanium atoms and the second layer containing silicon atoms constituting the photoreceptive layer are formed by controlling the layer thickness to an optical value in order to more effectively and easily achieve the object of the present invention. Plasma vapor phase method (PCVD method), optical CVD method, and thermal CVD method are adopted because they can be accurately controlled at a target level.

The unevenness provided on the surface of the support can be achieved by fixing a cutting tool having a 7-shaped cutting edge in a predetermined position on a cutting machine such as a milling machine or lathe, and rotating the cylindrical support according to a program designed in advance as desired. However, by regularly moving in a predetermined direction, the surface of the support can be accurately cut to form a desired uneven shape, pitch, and depth. The inverted V-shaped linear protrusion created by the unevenness formed by such a cutting method has a spiral structure centered on the central axis of the cylindrical support. The spiral structure of the inverted V-shaped protrusion may be a double or triple spiral structure, or a crossed spiral structure.

Alternatively, in addition to the spiral structure, a linear structure along the central axis may be introduced.6 The vertical cross-sectional shape of the uneven convex portion provided on the surface of the support is determined by the layer thickness within the microcolumn of each layer formed. The inverted V-shape is preferably used to ensure controlled non-uniformity and good adhesion and desired electrical contact between the support and the layer applied directly to the support. As shown in FIG. 9, it is desirable that the shape is substantially an isosceles triangle, a right triangle, or a scalene triangle. Of these shapes, isosceles triangles and right triangles are particularly desirable.

In the present invention, the dimensions of the irregularities provided on the surface of the support in a controlled manner are set in such a way that the object of the present invention can be achieved as a result, taking into account the following points.

That is, firstly, the A-9i layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the A-9i layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

-1 As a result of examining the problems in layer deposition mentioned above, the process problems in electrophotography, and the conditions for preventing interference fringes, the pitch of the recesses on the surface of the support is preferably 500.
#L, m ~ 0, 37zm, more preferably 200g
m to 1 lm, optimally from 50 pLm to 5 gm.

Further, the maximum depth of the recess is preferably 0. IJLm~5g
m, more preferably 0.3 pLm to 3 pLm, optimally 0.6 gm to 2 JLm. When the pitch and maximum depth of the recesses on the surface of the support are within the above range, the slope of the slope of the recesses (or linear protrusions) is preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees, The optimum angle is preferably 4 degrees to 10 degrees.

Further, the maximum difference in layer thickness due to the non-uniformity of the layer thickness of each layer deposited on such a support is preferably 0 within the same pitch.
．． 1 pm to 2 gm, more preferably 0.1 gm-
1,5 JLm, optimally 0,2 JLm”l pm
It is desirable that this is done.

Furthermore, the photoreceptive layer in the photoreceptive member of the present invention is composed of a first layer made of an amorphous material containing silicon atoms and germanium atoms, and an amorphous material containing silicon atoms, and has photoconductivity. It has a multilayer structure in which the second layer showing the
Indicates optical, photoconductive properties, electrical pressure resistance, and usage environment properties.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. Therefore, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has excellent optical response. is fast.

Hereinafter, the light receiving member of the present invention will be explained in detail with reference to the drawings.

FIG. 10 is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention.

A light-receiving member 1004 shown in FIG. 10 has a light-receiving layer 1000 on a support 1001 for the light-receiving member, and the light-receiving layer 1ooo has a free surface 1005 on one end surface. .

The photoreceptive layer 1000 is a-3t(H,X) (hereinafter ra-3iG) containing germanium atoms from the support 1001 side
e The first layer (abbreviated as (H,X)J)
G) 1002 and a second layer (S) 1003, which is composed of a-3t(H,X) and has photoconductivity, are laminated in this order. The germanium atoms contained in the first layer (G) 1002 are continuous and uniform in the layer thickness direction of the first layer (G) 1002 and in the in-plane direction parallel to the surface of the support. The first layer (G) so as to be in a distributed state.
Contained in 1002.

In the present invention, the second layer provided on the first layer CG)
The layer (S) does not contain germanium atoms, and by forming a light-receiving layer in such a layer structure, it can absorb all wavelengths from relatively short wavelengths to relatively short wavelengths, including the visible light region. The present invention provides a photoconductive member having excellent photosensitivity to light having wavelengths in the range.

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed over the entire layer region, so when a semiconductor laser or the like is used, the second layer (S ) can substantially completely absorb light on the long wavelength side, which is almost completely absorbed in the first layer (G).
Interference due to reflection from the support surface can be prevented.

Further, in the light-receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. Therefore, the laminated interface is sufficiently acidified to ensure chemical stability.

In the present invention, the content of germanium atoms contained in the first layer is determined as desired so as to effectively achieve the object of the present invention, but is preferably 1.
Desirably, the range is ~9.5X105 atomic ppm, more preferably 100-8XIO5 atomic ppm, optimally 500-1.7X10" atomic ppm.

In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light-receiving member to ensure that the desired properties are fully imparted to the light-receiving member.

In the present invention, the layer thickness TB of the first layer CG) is preferably 30 to 50W, more preferably 40 to 40P.
L: Optimally, it is desirable to have 50 people to 30 tiles.

Further, the layer thickness T of the second layer ('S) is preferably 0.5 to
90 pL, more preferably 1-80 pL optimally 2-50 pL
It is desirable to set it to #L.

The sum (TB+T) of the layer thickness TB of the first layer (G) and the layer thickness T of the second layer (S) is based on the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. Based on the organic relationship between the
To be determined accordingly.

In the light-receiving member of the present invention, the numerical range of (TB+T) is preferably 1 to toog, more preferably 1 to 80 P, and most preferably 2 to 50 P.

In a more preferred embodiment of the present invention, the above-mentioned layer thickness TB and layer thickness T preferably have appropriate values selected for each when satisfying the relationship TB/T≦1. It is desirable that

In selecting the numerical values of layer thickness TB and layer thickness T in the above case, it is more preferable that TB/T≦0.9. Optimally, the layer thickness TB is adjusted so that the relationship TB /T≦0.8 is satisfied.
It is desirable that the values of and the layer thickness T be determined.

In the present invention, the content of germanium atoms contained in the first layer (G) is IX11X105ato ppm
In the above case, the layer thickness TB of the first layer (G) is
It is desirable that the thickness be considerably thin, preferably 30 P or less, more preferably 25 P or less, most preferably 20 P or less.

In the present invention, if necessary, the first
Specific examples of the halogen atoms (X) contained in the layer (G) and the second layer (S) include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. It can be mentioned as such.

In the present invention, the first layer (G) composed of a-5i Ge (H, It is done by a deposition method. For example, a-3i Ge (H,
X) To form the first layer (G) composed of The raw material scraps for supply and, if necessary, the raw material gas for introducing hydrogen atoms (H) and/or the raw material gas for introducing halogen atoms (X) are heated to a desired gas pressure IE in a deposition chamber whose interior can be reduced in pressure. The a-3i Ge (H, In addition, when forming by sputtering method, for example, a target made of Si and a target made of Ge are formed in an atmosphere of inert gas such as Ar or He or a mixed gas based on these gases. using a
Or when sputtering using a mixed target of Si and Ge, hydrogen atoms (H) or /
Then, a gas for introducing halogen atoms (X) may be introduced into a deposition chamber for sputtering.

Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4゜Si2H6,5i3HB
, 5i4H1□, and other gaseous silicon hydrides (silanes) that can be gasified are mentioned as being effectively used, especially in terms of ease of handling during layer creation work, good Si supply efficiency, etc. Preferred examples include SiH4,5f2HB.

As a material that can be a source gas for supplying Ge, GeH
4, 'Ge2 He, Ge3 HB.

Ge4 Hoo, Ge5 H12, Ge6 H14, G
Germanium hydride in a gaseous state or capable of being gasified, such as e7H1B, GeB H18, and Ge9 H20, can be effectively used, especially in terms of ease of handling during layer creation work, good Ge supply efficiency, etc. So, G e H4
, G e2''H6, and G e3 HB are preferred.

Many halogen compounds are effective as the raw material gas for introducing halogen atoms used in the present invention, such as halogen gas, halogen compounds, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into

Furthermore, silicon hydride compounds containing halogen atoms, which are gaseous fg or can be gasified and which have silicon atoms and halogen atoms as constituent elements, can also be mentioned as effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, BrF, and CIF.

ClF3, BrF5, BrF3, IF3.

Examples include interhalogen compounds such as IF7, IC1, and IBr.

Specifically, silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, include, for example, S
iF4, Si2F6.

Si0 sentence 4. Silicon halides such as SiBr4 are preferred.

When a photoconductive member, which is characteristic of the present invention, is formed by a glow discharge method using a silicon compound containing a ``\rogen atom, hydrogen is used as a raw material gas that can supply Si together with a raw material gas for supplying Ge. The first layer (G) made of a-3iGe containing halogen atoms can be formed on a desired support without using silicon gas.

A first layer C containing halogen atoms according to a glow discharge method
G), basically, for example, a predetermined mixture of silicon halide, which is a raw material gas for supplying Si, germanium hydride, which is a raw material gas for Ge supply, and gases such as Ar, H2, He, etc. The first layer (
The first layer (G) can be formed on the desired support by introducing the first layer (G) into a deposition chamber for forming the gas and generating a glow discharge to form a plasma atmosphere of these gases. However, in order to more easily control the introduction ratio of hydrogen atoms, a desired amount of hydrogen gas or a silicon compound gas containing hydrogen atoms may be mixed with these gases to constitute a layer.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

In order to form the first layer region (G) made of a-3iGe (H, In the case of the ion blating method, for example, sputtering is performed using two targets made of Si and Ge or a target made of Si and Ge in a desired gas plasma atmosphere.
Polycrystalline silicon or single-crystal silicon and polycrystalline germanium or single-crystal germanium are respectively accommodated as evaporation sources in the evaporation port, and the evaporation sources are heated and evaporated by a resistance heating method, an electron beam method (EB method), etc. to produce flying evaporates. This can be done by passing through a desired gas plasma atmosphere.

At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, the scum of the above-mentioned halogen compound or the above-mentioned silicon compound containing halogen atoms is placed in the deposition chamber. It is sufficient to introduce the gas to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, such as H2, or the above-mentioned silanes or/
A plasma atmosphere of the dregs may be formed by introducing scum such as germanium hydride into a deposition chamber for sputtering.

In Mokuka and Akira, the above-mentioned halogen compounds or halogen-containing silicon compounds are used as effective raw material gases for introducing halogen atoms.
In addition, HF.

Hydrogen halides such as H0, HBr, HI, S iH2
F2, S i, H2I2, S iH20 sentence 2゜5iHCu3. Halogen-substituted silicon hydride such as 5iH2Br2, 5iHBr3, and GeHF3゜GeB2 F
2. , GeB3 F, GeHCJlj3.

GeB2. CM2, GeB3 CM, GeHBr3°GeB2 Br2, GeB3 Br, GeHI3.

Halides containing hydrogen atoms as one of their constituent elements, such as hydrogenated germanium halides such as GeB2 I2 and GeB3 I, GeF4 and Ge0M4.

GeBr4, GeI4, GeF2, GeCu
Germanium halides such as 2°GeB r2 , Ge I2, etc., gaseous or scalable substances can also be mentioned as useful starting materials for the formation of the first layer CG).

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer when forming the first layer (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

To structurally introduce hydrogen atoms into the first layer (G),
In addition to the above, H2, or SiH4゜Si2 H6, Si
3 HB , Si4 Hlo or other silicon hydride with germanium or a germanium compound for supplying Ge, or GeH4゜Ge2 H6, Ge3 HB , Ge
4 Hlo, Ge5H12, Ge8 H,14= Ge
This can also be achieved by causing germanium hydride such as 7 H1B=GeB H18°G e 9H20 and silicon or a silicon compound for supplying Si to coexist in a deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the first layer (G) constituting the photoreceptive layer to be formed, or the amount of hydrogen atoms and halogen atoms The sum of the amounts (H+X) is preferably 0.01 to 40
atom ic%, more preferably 0.05~
30 atom ic%, optimally 0.1-2
It is desirable that the amount is 5 atom ic%.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( The amount of the starting material used to contain X) introduced into the deposition system, the discharge force, etc. may be controlled.

In the present invention, the second
To form the layer (S), starting materials [second It can be carried out according to the same method and conditions as in the case of forming the first layer (G) using the starting material (II)) for forming the layer (S).

That is, in the present invention, to form the second layer (S) composed of a-St(H,X), for example, a glow discharge method,
For example, a second layer (S) composed of a-5i (H, In order to do this, basically, along with the raw material gas for supplying Si that can supply the silicon atoms (Si) described above, if necessary, a gas for introducing hydrogen atoms (H) and/or for introducing halogen atoms (X) is used. A raw material gas is introduced into a deposition chamber whose interior can be reduced in pressure, a glow discharge is generated in the deposition chamber, and a-5t (H, It is sufficient to form a layer. In addition, when forming by sputtering, for example, when sputtering a target made of Si in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases, hydrogen atoms (H ) or/and dregs for introducing halogen atoms (X) may be introduced into the deposition chamber for sputtering.

In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amounts of hydrogen atoms and halogen atoms contained in the $2 layer (S) constituting the photoreceptive layer to be formed is sum(
H+X) is preferably 1 to 40 atomic%, more preferably 5 to 30 atomic%, most preferably 5 to 25 atomic%.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the electrically conductive support include NiCr, stainless steel, AM, Cr, Mo, and Au.
, Nb, Ta.

Examples include metals such as V, Ti, Pt, and Pd, and alloys thereof.

Polyester is used as the electrically insulating support.

Films or sheets of synthetic resins such as polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used.

Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, NiCr, Ai
, Cr, Mo, Au, Ir, Nb.

T iiL, V, T i, P t, P d
* I n 203 + S n02 , I To
Conductivity is imparted by providing 11M consisting of (I n203 +S n02 ), etc., or if it is a synthetic resin film such as a polyester film, NiCr
, A.M.

Ag, Pb, Zn, Ni, Au, Cr, Mo.

A thin film of metal such as Ir, Nb, Ta, V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal to make the surface conductive. Granted. The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the light-receiving member 1004 in FIG. In the case of continuous high-speed copying, it is preferable to use an endless belt or cylindrical shape.The thickness of the support is determined as appropriate so that the desired light-receiving member is formed. When flexibility is required as a light-receiving member, it is made as thin as possible within a range that allows it to function as a support. In such a case, from the viewpoint of manufacturing and handling of the support, mechanical strength, etc., preferably 10
．． This is considered to be the above.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained.

FIG. 11 shows an example of a light-receiving member manufacturing apparatus.

In the gas cylinders 1102 to 1106 in the figure, raw material waste for forming the light receiving member of the present invention is sealed.
For example, 1102 is SiH4 gas (purity 99.999%).

1103 is a GeH4 gas (purity 99.999%, hereinafter abbreviated as G e H4) cylinder, 1104 is a SiF4 gas (purity 99.99%, hereinafter abbreviated as SiF4) cylinder, 1105 is He Gas cylinder (purity 99.999%) 1106 is a H2 gas cylinder (purity 99°999%).

In order to flow these gases into 1 tot of reaction chambers, valves 1122 to 1126 of gas cylinders 1102 to 1106,
Make sure the leak valve 1135 is closed,
In addition, inflow valves 1112 to 1116 and outflow valve 11
After confirming that 17 to 1121 and auxiliary valves 1132 and 1133 are open, first open the main valve 1134 to exhaust the reaction chamber 11O1 and each gas pipe.

Next, when the reading on the vacuum gauge 1136 reaches approximately 5×10 −8 torr, the auxiliary valves 1132 and 1133 and the outflow valves 1117 to 1121 are closed.

Next, to give an example of forming an amorphous layer on the cylindrical substrate 1137, gas;
iH4 gas, GeH4 gas from the gas cylinder 1103, open the valve 1122° 1123 and check the outlet pressure gauge 1127.
．． The pressure of 1123 is adjusted to 1 Kg/cm2, and the inflow valves 1112 and 1113 are gradually opened to allow the water to flow into the mass flow controllers 1107 and 1108, respectively. Subsequently, outflow valve 1117°1118, auxiliary valve 1132
are gradually opened to allow each gas to flow into the reaction chamber 1101. At this time, the outflow valve 1117.11
18, and also adjust the opening of the main valve 1134 while checking the reading of the vacuum word 1136 so that the pressure in the reaction chamber 1101 reaches the desired value. And the base 11
The temperature of 37 is set to 50 to 400 by heating heater 1138.
After confirming that the temperature is set in the range of °C,
The power source 1140 is set to a desired power to generate a glow discharge in the reaction chamber 1101, and germanium atoms are contained in the layer formed.

The glow discharge is maintained for a desired time in the manner described above to form the first layer (G) on the base 1137 to a desired layer thickness. At the stage where the first layer (G) has been formed to a desired layer thickness, glow discharge is performed for a desired time under the same conditions and procedures, except for completely closing the outflow valve 1118 and changing the discharge conditions as necessary. By maintaining the second layer (S) containing substantially no germanium atoms on the first layer (G)
can be formed.

During layer formation, the substrate 1137 is preferably rotated at a constant speed by a motor 1139 in order to ensure uniform layer formation.

Examples will be described below.

HISTORY EXAMPLE 1 An AIL support was machined on a lathe to a surface roughness of No. 101 in Table 1.

Next, the electrophotographic light-receiving member of A-3i was deposited on the above-mentioned AIL support using the deposition apparatus shown in FIG. 11 and according to various operating procedures under the conditions shown in Table 2.

The layer thickness distribution of the A-5i:H electrophotographic light-receiving member produced in this way was measured using an electron J11 microscope.
The average layer thickness difference between the center and both ends of the A-Ge:H layer is 0. II
Lm, A-5i: 27zm at the center and both ends of the H layer
Also, the difference in layer thickness in the minute portion is 0.02 gm for A-3iGe: 8 layers.

A-5i: 0.3 pLm with 8 layers.

Regarding the light-receiving member for electrophotography as described above, the thirteenth
Image exposure was performed using the device M shown in the figure (laser light wavelength 780 nm, spot diameter 80 m), which was then developed and
An image was obtained by transfer.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 2 In the same way as Example 1, use a lathe to turn the A pattern support into No.
Processed to have a surface roughness of -102.

Next, using the film deposition apparatus shown in FIG. 11 and following the same operating procedure as in Example 1 under the conditions shown in Table 3, A-3
An electrophotographic light-receiving member of t was deposited on the A pattern support described above.

When the layer thickness distribution of the thus produced A-5i:H electrophotographic light-receiving member was measured using an electron microscope, the average layer thickness difference was 0.1 between the center and both ends of the A-3iGe:8 layer. #
Lm, A-3i: 2 gm at the center and both ends of the 8 layers, and the difference in layer thickness at minute portions is 0.03 for the A-5iGe:H layer.

A-3i: Regarding a light-receiving member for electrophotography such as ``2, which has 8 layers and has an o, agm,'' the device shown in FIG.
Image exposure was carried out at 0 gm), and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 3 In the same manner as in Example 1, use a lathe to turn the A pattern support into No.
, processed to have a surface roughness of 103.

Next, using the film deposition apparatus shown in FIG. 11 and following the same operating procedure as in Example 1 under the conditions shown in Table 4, A-3
An electrophotographic light receiving member of t was deposited on the AfL support described above.

When the layer thickness distribution of the thus produced A-5i:H electrophotographic light-receiving member was measured using an electron microscope, the average layer thickness difference was 0.6 layers between the center and both ends of the A-SiGe: 8 layers. m
, A-3i: 2 pLm at the center and both ends of the 8 layers, and the difference in layer thickness at the minute part is 0.1 gm for the A-3iGe: 8 layers.
A-5i: 8 layers and 0.3 μm.

Regarding the light-receiving member for electrophotography as described above, the thirteenth
Image exposure was performed using the apparatus shown in the figure (laser light wavelength: 780 nm, spot diameter: 80 JLm), and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the image,
It was sufficient for practical use.

Example 4 In the same way as Example 1, the A pattern support was prepared using a lathe with No. 1 in Table 1.
Processed to have a surface roughness of 04.

Next, using the film deposition apparatus shown in FIG. 11 and following the same operating procedure as in Example 1 under the conditions shown in Table 5, A-3
The electrophotographic light-receiving member of Example 1 was deposited on the A-pattern support described above.

When the layer thickness distribution of the thus produced A-3i:H electrophotographic light-receiving member was measured using an electron microscope, the average layer thickness difference was 0.8 g between the center and both ends of the A-5iGe: 8 layers.
m, A-3i: 2jLm at the center and both ends of the 8 layers, and the difference in layer thickness at minute portions is O in the A-3iGe: 8 layers.
, 15 g m, A-53: 0.3 l m for 8 layers.

Regarding the light-receiving member for electrophotography as described above, the thirteenth
Image exposure was performed using the apparatus shown in the figure (laser light wavelength 780 nm, spot diameter 80 JLm), and the image was developed and
An image was obtained by transfer. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Table 1 Table 2 Table 3 Table 4 Table 5

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIGS. 9(A), 9(B), and 9(C) are explanatory diagrams of the surface conditions of typical supports, respectively. FIG. 1θ is an explanatory diagram of the layer structure of the light receiving member. FIG. 11 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 12 shows the surface of the A pattern support used in Examples. 1000......Photoreceptive layer 1001...A-text support 1002...・・・・・・・・・・・・・・・
First layer 1003・・・・・・・・・・・・・・・
・Second layer 1004・・・・・・・・・・・・・・・
・・Light receiving member 1005・・・・・・・・・・・・・・
...Free surface 1301 of light-receiving member...
......Light receiving member for electrophotography 1302
・・・・・・・・・・・・・・・・・・Semiconductor laser 1303・・・・・・・・・・・・・・・Fθ lens 1304・・・・・・・・・・・・・・・・・・Polygon mirror 1305・・・・・・・・・・・・・・・
... Plan view of exposure device 1306 ......
・・・・・・・・・Side view of exposure device No. 3 [21 4th garden 1x! (C) Work 2 shift oos

Claims (1)

[Scope of Claims] (1) A first layer made of an amorphous material containing silicon atoms and germanium atoms, and a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity. In a photoreceptive member having a multilayer photoreceptive layer in which the photoreceptive layer is provided in order from the support side, the photoreceptive layer has one layer within a short range.
A light-receiving member characterized in that it has a pair or more of non-parallel interfaces, and a large number of the non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction. (2) The light receiving member according to claim 1, wherein the arrangement is regular. (3) The light receiving member according to claim 1, wherein the arrangement is periodic. (4) The light receiving member according to claim 1, wherein the short range is 0.3 to 500 l. (5) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged irregularities provided on the surface of the support. (6) The pre-receiving/receiving member according to claim 5, wherein the unevenness is formed by an inverted V-shaped linear protrusion. (7) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially an isosceles triangle. (8) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a right triangle. (9) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a scalene triangle. (10) Claim 1, wherein the support body is cylindrical.
The light-receiving member described in 2. (11) The light-receiving member according to claim 10, wherein the inverted ■-shaped linear protrusion has a spiral structure within the plane of the support. (12) The light-receiving member according to claim 11, wherein the spiral structure is a multi-spiral structure. (13) The light-receiving member according to claim 6, wherein the inverted V-shaped linear protrusion is divided in the direction of its ridgeline. (I4) The light receiving member according to claim 10, wherein the ridgeline direction of the inverted V-shaped linear protrusion is along the central axis of the cylindrical support. (15) Claim 5, wherein the unevenness has an inclined surface.
The light-receiving member described in 2. (16) The light-receiving member according to claim 15, wherein the inclined surface is mirror-finished. (17) The light-receiving member according to claim 5, wherein the free surface of the light-receiving layer has projections and depressions arranged at the same pitch as the projections and depressions provided on the surface of the support.