JPS612160A - Photoreceiving member - Google Patents

Abstract

PURPOSE:To obtain a distinct picture image contg. no interference fringes by forming a laminated photoconductive layers comprising a layer contg. amorphous Si and amorphous Ge, and a layer contg. Si but contg. no Ge on the surface of a substrate where many projected parts superposed with subpeaks on the primary peak on the surface. CONSTITUTION:Many minute projections formed by superposing a subpeak on a primary peak having smaller diameter l than the diameter L of spot of irradiated light are provided on the surface of a conductive substrate 1,001, such as Al alloy, etc. The subpeak may be bisymmetric or asymmetric about the primary peak. They may be easily formed by machining so as that same projections are arranged periodically. For example, projections are formed with 100-150mu width and ca. 1.5mu difference between indented parts and protruded parts as illustrated in the figure. A laminated photoconductive layer 1,000 comprising a layer 1,002 contg. Ge in Si ununiformly in the thickness direction and a layer 1,003 of Si contg. no Ge, either one or both being incorporated with an amorphous material regulating the electroconductivity such as P or B ununiformly in the thickness direction, on the surface, and a layer 1,005 serving as a protecting layer and a reflection preventing layer is provided thereon. By this method, a photoreceiving member generating no interference fringes is obtd.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Conventional technology]

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record an image by performing processes such as transfer and fixing accordingly. Among these, in image forming methods using electrophotography, image recording is generally performed using a compact and inexpensive H, e-Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm). . In particular, electrophotographic light-receiving materials suitable for use with semiconductor lasers have the advantage of having much better consistency in their photosensitivity range than other types of light-receiving materials. , has high Vickers hardness and is socially non-polluting, such as those disclosed in JP-A-54-86341 and JP-A-56-837.
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as rA-3i4) disclosed in Japanese Patent No. 46 has been attracting attention.

Of course, if the photoreceptive layer is a single-layer A-5i layer, in order to maintain its high photosensitivity and ensure a dark resistance of 10Ωcm or more, which is required for electrophotography, it is necessary to use hydrogen. Because it is necessary to structurally contain atoms, halogen atoms, or boron atoms in addition to these atoms in a specific amount range in a controlled manner in the layer, it is necessary to strictly control the layer formation. etc., there are considerable limitations on the tolerances in the design of the light-receiving member.

For example, Japanese Patent Laid-Open No. 54-121743 is an example of a system that can expand this design tolerance and make effective use of high light sensitivity even if the dark resistance is low to some extent.
No. 1, JP-A-57-4053, JP-A-57-4053, JP-A-57-4053.
As described in Japanese Patent Publication No. 4172, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer, or as described in JP-A No. 57-5
No. 2178, No. 52179, No. 52180, No. 58
159, No. 5'8160, and No. 58161, a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or/and on the upper surface of the photoreceptive layer is used. Accordingly, light-receiving members with apparently increased dark resistance have been proposed.

Through such proposals, the A-3i-based light-receiving materials have made dramatic progress in terms of commercialization design tolerances, ease of management of manufacturing, and productivity. The speed of development towards this is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected light beams that come from the light source will cause a single wave of interference.

This interference phenomenon occurs in the visible image that is formed.
Dryness appears as stripes and causes image defects.
Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photosensitive layer decreases, so the above-mentioned interference phenomenon is serious.

This point will be explained with reference to the drawings.

FIG. 1 (Here, the weight of light incident on a certain layer constituting the light-receiving layer of the light-receiving member. The reflected light R1 reflected at the upper interface 102.
, the reflected light R3 reflected at the lower interface lO1 is omitted.

The iF uniform layer thickness of the layer is d, the refractive index is n, and the wavelength of light is IT/
'If the difference is non-uniform, the reflected light R,, R2 will be 2nd=m
The amount of light absorbed and transmitted by a certain layer depends on which of the following conditions is met: (m is an integer, reflected light strengthens each other) or 2nd - (m+-) enter (m is an integer, reflected light weakens each other). bring about change.

In a multilayered light-receiving member, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed on the transfer member 1H, causing a defective image.

A method to overcome this inconvenience is to diamond-cut the surface of the support and provide unevenness of ±500 to ±10000 to form a light-scattering surface (for example,
162975), a method in which a light absorption layer is provided by subjecting the surface of an aluminum support to black alumite treatment, or by dispersing carbon, colored pigments, or dyes in a resin/J:
(For example, Japanese Patent Application Laid-Open No. 57-165845), the surface of the aluminum support is subjected to a satin-like alumite treatment, or by sandblasting to provide fine grain-like irregularities.
A method of providing a light scattering and antireflection layer on the surface of a support (for example, JP-A-57-16554@) has been proposed.

With these conventional methods, the interference lt4 pattern appearing on the image could not be completely eliminated.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light n & scattering effect, it does not cause light scattering. Since the specularly reflected light component still exists, in addition to the interference fringe pattern remaining due to the specularly reflected light, the irradiated substrate is spread due to the light scattering effect on the support surface, and the This caused a significant decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment dispersed resin layer is provided, when forming the A-3i layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed light-receiving layer is significantly deteriorated. St
Damaged by the blastema during shadow formation, the original absorption function is reduced, and the subsequent A-3ii? due to deterioration of the surface condition. There are disadvantages such as having an adverse effect on the formation of the N photosensitive layer.

In the case of the third method of irregularly roughening the support surface, the third method
As shown in the figure, for example, part of the incident light I0 is reflected on the surface of the light-receiving layer 302 and becomes reflected light R1, and the rest enters the inside of the light-receiving layer 302 and becomes transmitted light 11.

A portion of the transmitted light I is scattered on the surface of the support 302 and becomes diffused light Kl, K2, K3.
. . . The remainder is specularly reflected and becomes reflected light R2, and the - part thereof becomes emitted light R3 and goes outside.

Therefore, since the emitted light R3, which is a component that interferes with the reflected light R3, remains, the interference/interference fringe pattern still cannot be completely eliminated.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
Reflected light R2 on the surface of layer 402 + reflected light R1 on the second layer
, the specularly reflected light R3 on the surface of the support 401 interferes with each other,
Interference fringes occur depending on the thickness of each layer of the light-receiving member.

Therefore, in a light-receiving member having a multilayer structure, the support 40
It has been impossible to completely prevent interference fringes by roughening one surface in a regular manner.

In addition, when the surface of the support is irregularly roughened using the Sand Plus) W method, the roughness varies greatly between lots, and even within the same lot, the roughness is uneven. Unfortunately, the manufacturing management was not good. In addition, relatively large protrusions often form randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501, so that the inclined surface of the unevenness of the support 501 and the inclined surface of the unevenness of the light-receiving layer 502 become parallel. .

Therefore, in that part, the incident light satisfies 2ndI=m input or 2nd1-(m slave station) input, and becomes a bright part or a dark part, respectively. In addition, for the entire photoreceptive layer, the layer thickness dl of the photoreceptive layer is
+ d2. Due to the different characteristics of d3 and da, a light and dark striped pattern appears.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that allows recording of dental images using electrophotography, in particular, recording of digital images with /＼tone information with clarity, high resolution, and high quality. be.

Yet another object of the present invention is to provide a light-receiving member having high photosensitivity, high signal-to-noise ratio characteristics, and good electrical contact with the support.

Another object of the present invention is to provide a light receiving member that can reduce light reflection on the surface of the light receiving member and efficiently utilize incident light.

[Summary of the invention]

The light-receiving member of the present invention comprises a support having a plurality of convex portions formed on its surface, the cross-sectional shape of which is a convex shape in which a main peak and a sub-peak are superimposed at a predetermined cross-section position; a first layer made of an amorphous material containing and germanium atoms, a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity, and a surface layer having an anti-reflection IF function. and a light-receiving layer having a multi-layered structure provided in order from the support side, wherein the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction.
and at least one of the first layer and the second layer contains a substance that controls conductivity, and in the layer region where the substance is contained, the distribution state of the substance is in the layer thickness direction. It has multiple characteristics of non-uniformity.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the invention.

In the present invention, a support (not shown) having an uneven shape smaller than the required resolution of the apparatus has a light-receiving layer having a multilayer structure along the slope of the unevenness, and is enlarged as shown in FIG. 6(A). As shown, since the layer thickness of the second layer 602 changes continuously from d to d6, the interface 603 and the interface 604 have a tendency toward each other. Therefore, this minute part (
(Short range) Intersecting coherent light beams interfere with each other in the microscopic area, producing a microscopic interference fringe pattern.

Moreover, as shown in FIG. 7, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel, as shown in FIG. 7(A), Since the traveling directions of the reflected light R1 and the emitted light R3, which become the incident light Io, are different from each other, when the interfaces 703 and 704 are parallel (r
(B) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), when the pair of interfaces are non-parallel (A) than when they are parallel (B), even if there is interference, the difference in brightness of the interference fringe pattern is ignored. be as small as possible. As a result, the amount of light incident on the minute portions is averaged.

As shown in FIG. 6, this is true even if the thickness of the second layer 602 is macroscopically non-uniform (d7#de), so the amount of incident light becomes uniform over the entire layer area ( r in Figure 6
(D) See J).

Furthermore, to describe the effect of the present invention in the case where the light-receiving layer has a multilayer structure and coherent light is transmitted from the irradiation side to the second layer, as shown in FIG. For Io, there are reflected lights R1, R2, R3, R4, and R5.

Therefore, in each layer, what was explained above with reference to FIG. 7 occurs.

Moreover, each layer interface within the micropart acts as a kind of slit, where diffraction development occurs. Therefore, the effect of interference in each layer appears as a product of interference due to the difference in layer thickness and interference due to diffraction at the layer interface.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Further, interference fringes generated within the minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Moreover, even if it appears in the image, it will not cause any substantial trouble because it is below the resolution of the eye.

In the present invention, it is preferable that the uneven inclined surface has a mirror finish in order to reliably align the reflected light in one direction.

The size of the minute portion (one period of the uneven shape) suitable for the present invention is ≦L, where L is the spont diameter of the irradiated light.

Further, in order to more effectively achieve the object of the present invention, it is desirable that the difference in layer thickness (d, -dt,) in the microscopic area is as follows, where λ is the wavelength of the irradiated light.

In the present invention, within the layer thickness of a microcolumn (hereinafter referred to as a "microcolumn") of a multilayered photoreceptive layer, at least any two layer interfaces are in a non-parallel relationship. Although the layer thickness of each layer is controlled within the microcolumn, any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied.

However, it is preferable that the layers forming parallel layer interfaces be formed to have a uniform layer thickness over the entire area, such that the difference in layer thickness between any two positions is as follows.

In order to more effectively and easily achieve the object of the present invention, in forming the first layer and the second layer constituting the photoreceptive layer,
Plasma vapor phase method (PCVD method), optical CVD method, and thermal CVN method are employed because the layer thickness can be accurately controlled at an optical level.

As methods for processing the support to achieve the object of the present invention, chemical methods such as chemical etching and electroplating, physical methods such as vapor deposition and sputtering, and mechanical methods such as lathe processing can be used. However, in order to easily manage production, a mechanical processing method such as a lathe is preferred.

For example, when machining a support using a lathe, a cutting tool having a 7-shaped cutting edge is fixed at a predetermined position on a cutting machine such as a milling machine or a lathe, and the cylindrical support is machined in a pre-designed program according to the desired results. Therefore, by regularly moving in a predetermined direction while rotating, the surface of the support can be accurately cut to create the desired uneven shape, pitch,
Formed at depth. The linear protrusion created by the unevenness formed by such a cutting method has a spiral structure centered on the central axis of the cylindrical support. The screwing structure of the protrusion may be a double or triple screwing structure, or a crossed spiral structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the screw structure.

In order to enhance the effects of the present invention and to facilitate processing control, it is preferable that the convex portions within a predetermined cross section of the support of the present invention have the same shape in a linear approximation.

Further, the convex portions are preferably arranged regularly or periodically in order to enhance the effects of the present invention. Furthermore, it is preferable that the convex portion has a plurality of sub-peaks in order to further enhance the effect of the present invention and improve the adhesion between the light-receiving layer and the support.

In addition to each of these, in order to efficiently scatter incident light in one direction, the convex portion may be symmetrical (FIG. 9(A)) or asymmetrical (FIG. 9(B)) about the main peak. It is preferable that they be unified. However, in order to increase the degree of freedom in controlling the processing of the support, it is better to have both of them mixed together.

In the present invention, each dimension of the irregularities provided on the surface of the support in a controlled manner is set so as to effectively achieve the object of the present invention, taking into consideration the following points.

That is, firstly, the A-3i layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the A-3i layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to clean it completely after image formation.

Furthermore, when cleaning the blade, there is a problem in that damage to the plate becomes obscured.

■As a result of examining the problems in the deposition of the two layers, the process problems in electrophotography, and the conditions for preventing interference fringes, it was found that the pinch of the concave portion on the surface of the support should preferably be 500
pL, m ~ 0.3 m, more preferably 200)i
m ~1 pm, optimally 50 ILm ~5 gm.

The maximum depth of the recess is preferably 0.1 g, more preferably 0.3 m to 3 μm.

The optimum range is preferably 0.6 gm to 2 gm. When the pitch and maximum depth of the recesses on the support surface are within the above range, the slope of the four parts (or linear protrusions) is preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees. , the optimum angle is preferably 4 degrees to 10 degrees.

Further, the maximum difference in layer thickness due to non-uniformity of the layer thickness of each layer deposited on such a support is preferably O, within the same pinch.
1 gm to 2 ILm, more preferably 0, I ILm
-1.5 gm, optimally 0.2 pm to Igm.

Furthermore, the photoreceptive layer in the photoreceptive member of the present invention includes a first layer made of an amorphous material containing silicon atoms and germanium atoms, and a first layer made of an amorphous material containing silicon atoms and exhibits photoconductivity. It has a multilayer structure in which a second layer and a surface layer having an antireflection function are provided in order from the support side, and the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction. Therefore, it exhibits extremely excellent electrical, optical, photoconductive properties, electrical voltage resistance, and usage environment characteristics.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. Therefore, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light region, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in munching with semiconductor lasers,
Moreover, the light response is fast.

The light-receiving member of the present invention will be described in detail below with reference to one drawing.

FIG. 10 is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention.

A light-receiving member 1004 shown in FIG. 10 has a light-receiving layer 1000 on a support 1001 for the light-receiving member.

The photoreceptive layer tooo is a-3i (hereinafter referred to as ra-3iGe) containing germanium atoms and optionally hydrogen atoms and/or halogen atoms (X) from the support 1001 side.
The first layer (G) composed of (H,X)J)
a-3t (hereinafter referred to as ra-3i (H
, (hails halogen atoms).

The germanium atoms contained in the first layer (G) 1002 are continuous in the layer thickness direction of the first layer (G) 1002 and are different from the side on which the support 1001 is provided. It is contained in the first layer (G) 1002 so that it is more distributed on the support toot side than on the opposite side (the surface layer 1005 side of the photoreceptive layer 1000).

In the light-receiving member of the invention, the distribution state of germanium atoms contained in the first layer (G) is as described above in the layer thickness direction, and the germanium atoms are distributed in the direction parallel to the surface of the support. It is desirable to have a uniform distribution in the in-plane direction.

In the present invention, the second layer (G) provided on the first layer (G)
Germanium atoms are not twisted in the layer (S), and by forming a light-receiving layer with such a layer structure, it is possible to transmit light from relatively short wavelengths to relatively long wavelengths, including the visible light region. The present invention provides a light-receiving member having excellent photosensitivity to light having wavelengths in the entire range of .

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed in the entire layer region,
Since the distribution concentration C of germanium atoms in the layer thickness direction is given a change that decreases from the support side toward the second layer (S), the first layer (G) and the second layer (S) As will be described later, by extremely increasing the distribution concentration C of gel manila 1 and atoms at the end of the support, the second
The first layer (S) absorbs the light on the long wavelength side, which is almost completely absorbed by the layer (S).
In the layer (G), it is possible to absorb substantially completely, and interference due to reflection from the support surface can be prevented.

Further, in the light receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. As a result, chemical stability is sufficiently ensured at the laminated interface.

11 to 19 show typical examples of the distribution state of germanium atoms contained in the first layer (G) of the light-receiving member in the present invention in the layer thickness direction.

11 to 19, the horizontal axis represents the distribution concentration C of germanium atoms, the vertical axis represents the layer thickness of the first layer (G), and tB represents the thickness of the first layer (G) on the support side. The position of the end face,
tr indicates the position of the end surface of the layer (G) on the opposite side to the support side. That is, the first layer containing germanium atoms (
In G), layers are formed from the tB side toward the L□ side.

FIG. 11 shows a first typical example of the distribution state of germanium atoms contained in the first layer CG) in the layer thickness direction.

In the example shown in FIG. 11, the surface where the first layer (G) containing germanium atoms is formed and the surface where the first layer (G
) The first layer (G) in which germanium atoms are formed while the distribution concentration C of germanium atoms takes a constant value CI from the interface position tB where it contacts the surface of
116 If C2 is gradually and continuously decreased from position t1 to the interface position 〇.

At the interface position tr, the distribution concentration C of germanium atoms is assumed to be C3.

In the example shown in FIG. 12, the distribution concentration C of the contained germanium atoms gradually and continuously decreases from the concentration C4 from the position tB to the position tT, and reaches the concentration C5 at the position 1t. forming a state.

In the case shown in FIG. 13, from position tB to position t2, the distribution concentration C of germanium atoms is constant at concentration C5, and gradually and continuously decreases between position 2 and position tT. At position T, the distribution concentration C is substantially zero (substantially zero here means less than the detection limit amount).

In the case shown in FIG. 14, the distribution concentration C of germanium atoms is continuously gradually decreased from the concentration C8 from the position wtB to the position ↓1, and becomes substantially zero at the position tT.

In the example shown in FIG. 15, the distribution concentration C of germanium atoms is located at position tB, and the concentration C3 is between 3 and 3.
, and are constant values, and at position 1, the concentration is C5°. Between the position t3 and the & position E□, the distribution density C is linearly decreased from the position t3 to the position LT.

In the example shown in FIG. 16, the distribution concentration C is at the position t
From position t4 to position t7, the concentration CI+ takes a constant value, and from position t4 to position t7, the concentration CI2 becomes the concentration CI3.
It is said that the distribution state decreases in a linear function until .

In the example shown in FIG. 17, from position tB to position tT, the distribution concentration C of germanium atoms is the concentration CI4.
It decreases in a linear function so as to substantially reach zero.

In FIG. 18, from position ItB to position ts, the distribution concentration C of germanium atoms decreases linearly from concentration 1i C15 to concentration CI6, and from position t1 to position ts. An example is shown in which the concentration CI6 is kept at a constant value between and the position t1.

In the example shown in FIG. 19, the distribution concentration C of germanium atoms is at the concentration CI7 at the position HtB, and is initially slowly decreased from the concentration CI7 until reaching the position t6, and then rapidly decreases near the position t6. At position 51 t 6, the concentration is reduced to CI8.

Between the position t6 and the position Ht7, the decrease is rapid at first, and then it is gradually decreased until the position t is reached.
7, the density becomes C19, and between the positions t7 and t8, it is gradually decreased very slowly until the density reaches C2° at the position t8.

Between position C20 and position ET, the concentration is reduced from C20 to substantially zero according to a curve shaped as shown in the figure.

From the following Figures 1-1 to 19, the first layer (G)
As described above, some typical examples of the distribution state of germanium atoms contained in the layer thickness direction, in the present invention,
On the support side, there is a part with a high distribution concentration C of germanium atoms, and on the ○ side above the interface, the distribution concentration C is high.
The first layer (G) is provided with a distribution state of germanium atoms having a portion which is considerably lowered on the support side.

The first layer (G) constituting the light receiving layer constituting the receiving member in the present invention is preferably a localized region (A) containing germanium atoms at a relatively high concentration on the support side as described above. ) is desirable.

In the present invention, the localized region (A) is
Explaining using the symbols shown in FIG. 9, it is desirable that the interface be provided within 5 points from the interface position t.

In the present invention, the localized region (A) may be the entire layer region (LT) from the interface position tB to the thickness of 5 mm, or may be a part of the layer region (Ll). In some cases.

Whether the localized region (A) is a part or all of the layer region (LT) is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

The localized region (A) has a distribution state of germanium atoms contained therein in the layer thickness direction, and the maximum value Cmax of the distribution concentration of germanium atoms is preferably 1000 atomic cppm or more, more preferably more than 1000 atomic cppm relative to silicon atoms. 5000atomi cppm or more, optimally lXl
It is desirable that the layers be formed so that a distribution state of less than 0.04 atom cppm can be achieved.

That is, in the present invention, from the first layer containing germanium atoms, the layer thickness from the support side is within 5 μl (t
The maximum value Cmax of the distribution concentration in the layer region from B to 5LL layer)
It is preferable that it be formed so that there is.

In the present invention, the amount of hydrogen atoms (H)- or the amount of halogen atoms (X) contained in the second layer (S) constituting the photoreceptive layer to be formed, or the amount of hydrogen atoms and halogen atoms The sum of the amounts (H+X) is preferably 1 to 40 atomci%,
More preferably 5 to 30 atomci%, optimally 5 to 2
It is desirable that the content be 5 atomic%.

In the present invention, the content of germanium atoms contained in the first layer is determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 to 9. 5X10' at.

micppm, more preferably 1oO to 8 x 10'a
tomic ppm, optimally 500-7X10Sa
It is desirable that the amount be tomic ppm.

In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light receiving member to ensure that the desired properties are fully imparted to the light receiving member.

In the present invention, the layer thickness TB of the first layer (G) is preferably 30A to 50g, more preferably 30A to 50g.

40A~40. , most preferably 50A to 30#L.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
0. , more preferably 1-80g optimally 2-50pL
It is desirable that this is done.

The sum of the layer thickness TB of the first layer (G) and the layer thickness T of the second layer (S) (TB + T) is determined by the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. It is determined as desired when designing the layers of the light-receiving member based on the organic relationship between the two.

In the light receiving member of the present invention, the numerical range of (TB+T) is preferably 1 to 100, more preferably 1 to 80, and most preferably 2 to 50. It is desirable that this is done.

In a more preferred embodiment of the present invention, the above layer thickness TB and layer thickness T are preferably TB/T≦1.
It is desirable that appropriate numerical values be selected for each so as to satisfy the following relationship.

In selecting the numerical values of layer thickness TB and layer thickness T in the above case, it is more preferable that T/T≦0.9. Optimally, T n / T≦0.8
It is desirable that the values of the layer thickness 8 and the layer thickness T be determined so that the following relationship S is satisfied.

In the present invention, the content of germanium neelum atoms contained in the first layer (G) is 1. X10X105at
o ppm or more, the layer thickness T of the first layer CG)
It is desirable that B be fairly thin, preferably 30. less than 25g, more preferably 25g or less, most preferably 25g or less
It is desirable that the amount is 0 g or less.

In the present invention, the halogen atoms (X) optionally contained in the first layer (G) and second layer (S) constituting the photoreceptive layer include fluorine, chlorine, etc. , bromine, and iodine, with fluorine and chlorine being particularly preferred.

Present invention 4. : , t-11+'te, a-3iGe (
The first layer CG) composed of H, For example, by glow discharge method, a-3
In order to form the first layer CG composed of iGe (H,
The raw material gas for Ge supply that can supply The gas is introduced into the deposition chamber at a desired pressure to generate a glow discharge in the deposition chamber, and the distribution concentration of germanium atoms contained on the surface of a predetermined support, which has been placed in a predetermined position, is adjusted to a desired concentration. While controlling according to the rate of change curve, a-3i
A layer made of Ge(H,X) may be formed. In addition, when forming by sputtering method, for example, Ar, He
Using two targets, one made of Si and the other made of Ge, in an atmosphere of an inert gas such as or a mixed gas based on these gases, or a target made of Si and Ge.
When performing sputtering using a mixed target, a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) may be introduced into the sputtering deposition material as necessary.

Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4, Si2H6, S13
He, S l q Hl. Silicon hydride (silanes) in a gaseous state such as
SiH4 and Si2H6 are preferred from the viewpoint of good supply efficiency.

As a substance that can become raw material waste for supplying Ge, GeH
,,,Ge2 H6,Ge3)(e,Ge,Hl.,,
Ge5)1.2. Ge6H,,,Ge7)(+6.ae
F]) 11f1. Germanium hydride in a gaseous state or capable of being gasified, such as ae9' (20), is cited as one that can be effectively used, especially for ease of handling during one-layer production work, G
In terms of e-supply efficiency, etc., GeH,, Ge2 H6,
Ge3H8 is preferred.

Many halogen compounds are effective as the raw material residue for introducing halogen atoms used in the present invention. For example, halogen gas, halides, interhalogen compounds, halogen-substituted silane derivatives, and other gaseous or gaseous Preferred examples include halogen compounds that can be converted into

Further, silicon hydride compounds containing halogen gas, which are in a gaseous state or can be gasified and have silicon atoms and halogen atoms as constituent elements, can also be cited as effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, BrF, and CJIF.

ClF3. BrF5, BrF3. I'F3, IF5, I
Interhalogen compounds such as C1 and IBr can be mentioned.

As a silicon compound containing a halogen atom, so-called a silane derivative substituted with a halogen atom, specifically, for example, S
iF4. Preferred examples include silicon halides such as Si2F6.5jCfL4.5iBr.

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, hydrogen is used as a raw material gas capable of supplying St together with a raw material gas for supplying Ge. a-3iGe containing halogen atoms on a desired support without using silicon oxide scum.
A first layer CG) consisting of

According to the glow discharge method, the first layer containing halogen atoms (
When producing F2. H
Gases such as E are introduced into the deposition chamber for forming the first layer (G) at a predetermined mixing ratio and gas flow rate, and a glow discharge is generated to form a plasma atmosphere of these gases. By doing this, the first layer (G) can be formed on the desired support, but in order to make it easier to control the ratio of hydrogen atoms introduced, hydrogen is added to these residues. Gasmata 1
A layer may also be formed by mixing a desired amount of silicon compound gas containing hydrogen atoms.

Moreover, each type of waste may be used not only as a single species but also as a mixture of a plurality of them at a predetermined mixing ratio.

A first layer (H,X) consisting of a-3iGe (H,
In order to form G), for example, in the case of a sputtering method, a target made of Si and a target made of Ge are used, or a target made of Si and Ge is used, and these are placed in a desired gas plasma atmosphere. In the case of sputtering and ion blasting, for example, polycrystalline silicon or single crystal silicon and polycrystalline germanium or single crystal germanium are each housed in a deposition port as evaporation sources, and these evaporation sources are heated using resistance heating or electron beam heating. This can be carried out by heating and evaporating the flying evaporated material using a beam method (EB method) or the like and passing the flying evaporated material through a desired gas plasma atmosphere.

At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to introduce the gas to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, raw material residue for hydrogen atom introduction, such as F2, or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as raw material gases for introducing halogen atoms, but in addition, HF, HCu, HBr, HIk! i, hydrogen halide, SiH2F2, SiH2I2, SiH2C
halogen-substituted silicon hydrides such as 12,5iHC1s, SiH2Br2.5iHBr3, and GeHF3, Ge
F2 F2, GeH3F, GeHBr3, GeF2
Cu2, GeH, 5Cl, GeHBr3, GeF2
Br2, GeH3Br, GeHI3, GeF2 I2
, halides containing hydrogen atoms as one of their constituent elements such as hydrogenated germanium halides such as GeH3I,
,GeC1,,GeBra.

GeI4, GeF7, GeC'12, GeBr
7, germanium halides such as G e I 2 , and other gaseous or scum-formable substances can also be mentioned as effective starting materials for forming the first layer (G).

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer when forming the first layer (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

To structurally introduce hydrogen atoms into the first layer (G),
In addition to the above, H2, or 5iHa, Si7 H6,5i
Silicon hydride such as 3HB, 5i4H1o, etc. with germanium or a germanium compound for supplying Ge, or
GeHo, Ge2H,,,Ge3 H8,Ge,,H,
o, Ge5H+ 2. Ge6 Hl 4', Ge, H
, 6, 'GeBH18, Geg H20, etc., and silicon or a silicon compound for supplying Si coexist in the deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H) contained in the first layer (G) constituting the photoreceptive layer to be formed or the cage of halogen atoms (X) or the amount of hydrogen atoms and halogen atoms The sum of the amounts (H+x) is preferably 0.01 to 40
atomic%, more preferably 0.05-30 a
tomic%, optimally 0.1 to 25 atoms
It is desirable to set it to ic%.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( The amount of the starting material used to contain X) introduced into the deposition system, the discharge force, etc. may be controlled.

In the present invention, the second
In order to form the layer (S), among the starting materials (I) for forming the first layer CG), starting materials excluding the starting material that will become the raw material gas for supplying Ge Using the starting material (II)) for forming the second layer (S), the first layer (G)
It can be carried out according to the same method and conditions as in the case of forming .

That is, in the present invention, to form the second layer (S) composed of a-3i(H,X), for example, a glow discharge method,
This is accomplished by a vacuum deposition method that utilizes a discharge phenomenon such as a sputtering method or an ion blating method. For example, in order to form the second layer (S) composed of Te a-3i CH, Along with the raw material gas, a raw material gas for introducing hydrogen atoms (H) and/or halogen atoms (X) as needed is introduced into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber. , and a layer consisting of a-3i (H,

In addition, when forming by sputtering method, 1, for example, Ar
For introducing hydrogen atoms (H) and/or halogen atoms (X) when sputtering a target composed of Si in an atmosphere of inert gas such as He, or a mixture of gases based on these gases. What is necessary is to introduce the residue into the deposition chamber for sputtering.

In the light receiving member 1004 of the present invention, at least the first layer (G) 1002 and/or the second layer (S) 100
3 contains a substance (C) that controls conduction characteristics,
The desired conductive properties are imparted to the layer containing said substance (C).

In the present invention, the substance (C) that controls the conductive properties contained in the first layer CG) 1002 or /' and the second layer (S) 1003 is the layer containing the substance (C). The substance (C) may be contained in the entire layer region, or may be unevenly distributed in a part of the layer region in which the substance (C) is contained.

However, in either case, the distribution state of the substance (C) in the layer thickness direction is non-uniform in the layer region (PN) containing the substance (C). A blockage, for example, the first layer (
If the substance (C) is to be contained in the entire layer area of the first layer (G), the substance (C) is distributed in the first layer (G) so that it is distributed more toward the support side of the first layer (G). contained within.

In this way, in the layer region (P N'), the material (C
) can be made non-uniform in the distribution concentration in the layer thickness direction to make the optical and electrical connections at the contact interface with other layers ``poor.''

In the present invention, the substance (C) that governs the conduction properties is
The first layer (G) is unevenly distributed in some layer regions of the layer (G).
In the case where the substance (C) is contained therein, the layer region (PN) in which the substance (C) is contained is provided as an end layer region of the first layer CG) and adjusted as desired each time.

In the present invention, the substance (C) is contained in the second layer (S).
When containing, preferably at least the first layer (
It is desirable to contain the substance (C) in the layer region including the contact interface with G).

When both the first layer (CG) and the second layer (S) contain a substance (C) that controls conduction characteristics, the substance (C) in the first layer (G) is layer area and the second
It is desirable that the layer region of the layer (S) containing the substance (C) be in contact with each other.

Further, the substance (C) contained in the first layer CG) and the second layer (S) is of the same type in the first layer (G') and the second layer (S). However, they may be of different types, and the content may be the same or different in each layer.

According to Heigo et al., in the present invention, when the substance (C) contained in each layer is the same type in both layers, the content is sufficiently increased in the first layer (G), or Alternatively, it is preferable that each desired layer contains substances (C) having different electrical characteristics.

In the uninvention, at least the first layer constituting the photoreceptive layer
By incorporating a substance (C) that controls the conductive properties into the layer (G) and/or the second layer (S), the substance (C)
The conductive properties of the layer region containing C) (which may be part or all of the first layer (G) or the second layer (S)) can be arbitrarily controlled as desired. However, examples of such substances include so-called impurities in the semiconductor field, and in the present invention, a-5i (H, ) or/and a-3iGe (H.

For X), p-type impurities and n
Examples include n-type impurities that provide type conductivity characteristics.

Specifically, P-type impurities include atoms belonging to group m of the periodic table (group Ⅰ atoms), such as B (boron), AM (aluminum), Ga (gallium), In (indium), and Ti ( Among them, B and Ga are particularly preferably used.

As n-type impurities, atoms belonging to Group V of the periodic table -(
Group ■ atoms), such as P (phosphorus), As (arsenic), Sb
(antimony), Bi (hismuth), etc., which are particularly preferably used.

P, AS.

In the present invention, the content in the layer region (PN) in which the substance (C) that controls conduction characteristics is contained is determined by the conductivity required for the layer region (PN) or (PN
) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, the content of the substance that controls the conduction characteristics is determined by considering the relationship with other regions provided in immediate contact with the layer region (PN) and the characteristics at the contact interface with the other layer regions. is selected as appropriate.

In the present invention, the content of the substance (C) that controls conduction properties contained in the layer region (PN) is preferably 0,01-5XIO'a atomic pp
m, more preferably 0.5 to IXIO4atomic
pPm, optimally 1-5X103 atomic p
It is desirable to read pm and y.

In the present invention, the content of the substance (C) in the layer region (PN) containing the substance (C) that governs the conduction properties is preferably 30 atomic cppm or more - [more preferably -1]. For example, when the substance (C) to be contained is the above-mentioned P-type impurity, the free surface of the photoreceptive layer is charged to be polar. When the substance (C) to be contained is the n-type impurity, it is possible to effectively prevent electron injection from the support side into the photoreceptive layer. When the free surface of the receptor layer is charged to e-polarity, it is possible to effectively prevent holes from being injected from the support side into the light receiving area.

In the case described in 1- above, as described above, the layer region (P
'N) is excluded from the layer area (Z).
PN) may contain a substance (C) that controls the conduction characteristics of a conduction type polarity different from the conduction type polarity of the substance (C) that governs the conduction characteristics contained in the PN), or a substance (C) of the same polarity may be contained. The layer region (P
It may be contained in an amount much smaller than the actual amount contained in N).

In such a case, the content of the substance (C) that controls the conduction characteristics contained in the layer region (Z) depends on the polarity and content of the substance (C) contained in the layer region (PN). It is determined as desired depending on the amount, but preferably 0,001 to 1001000 at ppm,
More preferably 0.05-05-500ato ppm
, the optimum range is preferably 0.1-21-200ato ppm.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is preferably is 3
It is desirable to set it to 0 atomic ppm or less.

In the present invention, the photoreceptive layer contains a layer region containing a substance controlling conductivity having a conductivity type of one polarity and a substance controlling conductivity having a conductivity type of the other polarity. It is also possible to provide a so-called depletion layer in the contact region by providing a layer region in direct contact with the contact region.

For example, the layer region containing the p-type impurity and the layer region containing the n-type impurity are provided in the photoreceptive layer so as to be in direct contact with each other to form a so-called p-n junction. Thus, a depletion layer can be provided.

27 to 35 show typical examples of the distribution state of the substance (C) contained in the layer region (PN) of the light-receiving member in the present invention in the layer thickness direction. In addition, in each figure,
If the layer thickness and concentration are shown as they are, the differences between each figure will not be clear and clear, so they are shown in an extreme form, and these figures should be understood to be schematic. For the actual distribution, select the value of t, (1≦i≦8) or C9 (1≦i≦) so that the purpose of the present invention can be achieved and the desired distribution density line can be obtained. Alternatively, the entire distribution curve should be multiplied by an appropriate coefficient.

In FIGS. 27 to 35, the horizontal axis represents the distribution concentration C of the substance (C), and the vertical axis represents the layer thickness of the layer region (P N),
tB is the position of the end surface of the layer region (PN) on the support side, tT
indicates the position of the end surface of the layer region (PN) on the side opposite to the support side. That is, in the layer region (PN) containing the substance (C), layers are formed from the tB side toward t1.

FIG. 27 shows a substance (C
) is shown as a first typical example of the distribution state in the layer thickness direction.

In the example shown in FIG. 27, the germanium is Although the distribution concentration of atoms takes a constant value of C01, it is contained in the layer region (P N) where the substance (C) is formed, and the concentration gradually continues from position t to interface position t from C7. has been reduced. At the interface position 0, the distribution concentration C of the substance (C) is substantially zero.

(Here, "substantially zero" means less than the detection limit amount.)

In the example shown in FIG. 28, the contained substance (C
) The distribution concentration C gradually and continuously decreases from the concentration C3 from the position tB to the position ET, forming a distribution state in which the concentration C4 suddenly decreases at the position 〇.

In the case shown in FIG. 29, from position MtB to position t2, the distribution concentration C of germanium atoms is kept constant at concentration C5, and gradually and continuously decreases between position t2 and position tT. At tT, the 1-distribution concentration C is substantially zero.

In the case shown in Fig. 30, the distribution concentration C of substance (C) is at position L.
From B to position ET, the concentration CI gradually decreases continuously and becomes substantially zero at position 1.

In the example shown in FIG. 31, the distribution concentration C of substance (C)
is the concentration C7 between the position and the position t4.
is a constant value, and at position 1, the distribution density C is zero. Between the position t4 and the position t□, the distributed concentration C is linearly decreased from the position t4 to the position t. In the example shown in FIG. 32, the distributed concentration C
takes a constant value of concentration CB from position tB to position 1t, and takes a constant value of concentration CB from position ts to position ET, and from position ts to position ET, the concentration is C1.
It is said that the distribution state decreases linearly up to °.

In the example shown in FIG. 33, from position tB to position t, the distribution concentration C of the substance (C) decreases linearly from the concentration C11 to substantially zero.

In FIG. 34, from position tB to position t6, the IOS degree C of substance (C) decreases linearly from the concentration 01 to the concentration C13.

Between position 6 and position LT, the concentration CI3 is -
- An example of a fixed value is shown.

In the example shown in FIG. 35, the distribution concentration C of substance (C) is concentration CI4 at position tB, and concentration CI4 at position 7.
Until reaching the concentration CI4, the concentration is initially decreased slowly, and near the position t7, it is rapidly decreased to the concentration C1 at the position t7.

between the position and the position t8, the decrease is rapid at first, and then the decrease is slow and gradual until the position t8 is reached.
The concentration becomes C16 at the position t8, and gradually decreases very slowly between the position t8 and the position 1, and reaches the concentration CI7 at the position 1.

Between position E9 and position ET, the concentration is reduced from C57 to substantially zero according to a curve shaped as shown in the figure.

As described above with reference to FIGS. 27 to 35, some typical examples of the distribution state of the substance (C) contained in the layer region (PN) in the layer thickness direction, in the present invention, On the support side, there is a part with a high distribution concentration C of the substance (C),
On the interface t□ side, the layer region (Ptj) is provided with a distribution state of the substance (C) in which the distribution concentration C has a considerably lower portion on the support side.

The layer region (P N) constituting the light-receiving layer constituting the receptor member in the present invention is preferably a localized region (P It is desirable to have B).

In the present invention, one localized region CB) is desirably provided within five angles from the interface position tB, if explained using the symbols shown in FIGS. 27 to 35.

In the present invention, the localized region (B) may be the entire layer region (L) up to 5JL thickness from the interface position tB, or it may be a part of the layer region (L). In some cases.

Whether the localized region (B) is a part or all of the layer region (L') is determined as appropriate depending on the characteristics required of the light-receiving layer to be formed.

A substance that controls conduction properties (
C), for example, a layer region (PN) containing the substance (C) by structurally introducing group (III) atoms or group (III) atoms;
In order to form a photoreceptive layer, during layer formation, a starting material for introducing group m atoms or a starting material for introducing group It can be introduced along with the substance. As a starting material for introducing such group m atoms, it is preferable to use a material that is in a scum state at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. Specifically, starting materials for the introduction of group Ⅰ atoms include B2H6, B11H10・B5H9・BSHII・B
6 Hlo・B6 H(2,, Bb I(+ a, etc.), boron hydride, BF3 , BC13, BBr3Br3 boron halide can be obtained. In addition, AlCl3, GaC
1,,,Ga(CH3)3,InCl3,TlCl
3rd place can also be mentioned.

In the present invention, effective starting materials for introducing Group V atoms include PH3,
p2) (hydrogenated phosphorus, P)l4■, PF3, etc.
PFs,, PCI3, PCI5, PB r3, PB
Examples include (7) halogenated phosphorus such as rj, PI3, etc.

Kono et al., AsH3, AsF3, A 5C13, AsB
r3. AsF5. SbH3,5bF13. SbF3.5
bCI3.5bC15, SiH3,5iC13, B1B
r3 and the like can also be mentioned as effective starting materials for introducing Group V atoms.

The thickness of the surface layer with antireflection function is determined as follows.

When the refractive index of the material of the surface layer is n and the wavelength of the irradiated light is λ, the thickness d of the surface layer having an antireflection function is preferably d=4 nm (m is an odd number).

Furthermore, as the material for the surface layer, a material having a refractive index of -F is optimal, where na is the refractive index of the second layer on which the surface layer is deposited.

Considering such optical conditions, the thickness of the antireflection layer is preferably 0.05 to 2 gm, assuming that the wavelength of the exposure light is in the wavelength range from near infrared to visible light. be.

In the present invention, examples of materials that can be effectively used for the surface layer having an antireflection function include MgF7.
, A1203 , ZrO, , Tj02ZnS, CeO
2, CeF2. 5i02,SiO,Ta,,05
, AlF3, NaF.

Examples include inorganic fluorides, inorganic oxides, and inorganic nitrides of 813N4″9, or organic compounds such as polyvinyl chloride, polyamide resin, polyimide resin, vinylidene fluoride, melamine resin, epoxy resin, phenolic resin, and cellulose acetate. .

In order to achieve the purpose of the present invention more effectively and easily, these materials can be used by vapor deposition method, sputtering method, plasma vapor deposition method (PCVD method), optical CVD by one person, thermal CVD method, and coating method are adopted.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, An, C'r, Mo, and Au.
, Nb, Ta, V, Ti.

Examples include PL, PIT metals, and alloys thereof.

As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. . Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, on its surface.

NiCr, AJj, Cr, Mo, Au, Ir.

Nb, Ta, V, Ti, PL, Pd, In, 03°S
n02, I To (I n203 +S no2
), etc., or if it is a synthetic resin film such as polyester film, NiCr, A, Ag, Pb.

Zn, Ni, Au, Cr, Mo, Ir, Nb.

A thin film of metal such as T a , V , T i , P L is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the metal to impart conductivity to the surface. be done.

The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the light receiving member 1004 in FIG. 10 may be used as a light receiving member for electrophotography. In the case of continuous high-speed copying, it is desirable to use an endless belt or a cylindrical shape.

The thickness of the support is appropriately determined so as to form a desired light-receiving member, but if flexibility is required as a light-receiving member, the support can sufficiently function as a support. It is made as thin as possible within this range. In such a case, from the viewpoint of manufacturing and handling of the support, mechanical strength, etc., it is preferably 10= or more.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be described.

FIG. 20 shows an example of a light-receiving member manufacturing apparatus.

In the figure, gas cylinders 2002 to 7006 are sealed with raw material gas for forming the light-receiving member of the present invention. abbreviated) to Bonn, 20
03 is GeH4 gas (purity 99.999%, hereinafter referred to as Ge
(abbreviated as Ho) Bonn, 2004 is “fFa gas (purity 9
9.99%, hereinafter abbreviated as 5iF4) cylinder, 2005 is B2H6 gas diluted with H2 gas (purity 99.999).
%, hereinafter abbreviated as B2H6/H2. ) to Bonn, 2006
HaH2is (pure 1K 99.

999%) cylinder.

In order to flow these gases into the reaction chamber 2001, valves 2022 to 2026 of the gas cylinders 2002 to 2006,
Check that leak valve 2o35 is closed,
In addition, inflow valves 2012 to 2016 and outflow valve 201
7-2021, confirm that the auxiliary valve 2032.2o33 is open, and first open the main valve 2o34 to exhaust the reaction chamber 2001 and each gas pipe. Next, vacuum: l 2036 reading is about 5X10 tor
When the temperature reaches r, the auxiliary valves 2032 and 2033 and the outflow valves 2017 to 2o21 are closed.

Next, to give an example of forming an amorphous layer on the cylindrical substrate 2o37, Si
H4 scum, G e H4 gas from gas pump 2oo3,
B2H6 gas/H2 from Kasu cylinder 2oo5, 2006
From H2 gas wo/< Lupu 2022.2023.2o2
5.Open 2o26 outlet pressure cage 2o27.2o28
．． 2030.2031 (7) Adjust pressure to 1Kg7cm2, inflow/help 2012.2o13.2015.2o
16 to slow/2, mass flow controller 2007
．． ．． 2008, 2010, and 2011 respectively. Subsequently, the outflow valve 2017, 2o18.2020.
2o21 and auxiliary valves 2o32 and 2033 are gradually opened to allow each gas to flow into the reaction chamber 2001. At this time, the flow rate of SiH4 gas, GeH4 gas flow rate, B2H6 gas/H2 gas flow rate, H, and the ratio of gas flow rate are adjusted to the desired values.
21, and also adjust the opening of the main pulp 2034 while checking the reading on the vacuum gauge 2036 so that the pressure inside the reaction chamber 2001 reaches the desired value. And the base 20
The temperature of 37 is set to 50 to 400 by heating heater 2038.
It was confirmed that the temperature was set in the range of °C. The power source 2040 is set to a desired power to generate a glow discharge in the reaction chamber 2001, and at the same time the flow rate of GeH4 sludge and B2H,
,/Control the distribution degree of Gel Manila J atoms contained in the formed layer by gradually changing the opening of the valve 2018.2020 by controlling the flow rate of the /H7 gas manually or by using an externally driven motor, etc. .

The glow discharge is maintained for a desired time in the manner described above, and the first layer (G) is formed on the base 2037 to a desired layer thickness. At the stage when the first layer (G) has been formed to a desired layer thickness, glow discharge is performed for a desired time under the same conditions and procedures, except for completely closing the outflow valve 2018 and changing the discharge conditions as necessary. By maintaining a second layer (G) substantially free of gel manila T atoms on the first layer (G).
S) can be formed.

In addition, each layer of the first layer (G) and the second layer (S) may be controlled by opening and closing the outflow pulp 2020 as appropriate, containing or not containing boron, or changing a part of the layer area of each layer. It is also possible to contain boron only in.

Next, to deposit a surface layer on the second layer (S),
For example, the hydrogen (H2) gas cylinder in 2006 is replaced with an argon (Ar) gas cylinder, the deposition apparatus is cleaned, and the surface layer material is applied all over the canned electrode. After that, install the layer formed up to the second layer (S) in the device,
After the pressure is reduced, argon gas is introduced to generate glow discharge and sputter the surface layer material to form a surface layer to a desired thickness.

During layer formation, it is desirable that the substrate 2037 be rotated at a constant speed by the motor 2o39 in order to ensure uniform layer formation.

Examples will be described below.

Example 1 AI support (length L) 357 mm, diameter (r) 80 mm
) was machined using a lathe to give the surface properties as shown in FIG. 21(B).

Next, using the deposition apparatus shown in FIG. 20, the conditions No.
, 101 and according to various operating procedures under the conditions shown in Table 2, the electrophotographic light receiving member of A-3i was subjected to the above-mentioned AI treatment.
Deposited onto a support.

Note that the first layer is GeH4, SiH4, B;H'6/H
GeH4 and SiH so that the flow rates of each residue of 2 are as shown in FIGS. 22 and 36.

mass flow controller 20072008 and 20
1O was controlled by a computer (HP9845B).

Incidentally, the surface layer was deposited as follows.

After the second layer is deposited, the hydrogen (H2) cylinder is replaced with argon (A).
r) Replace with a gas cylinder, clean the deposition device, and apply the surface layer material shown in Table 1, Condition No. 101, all over the cathode electrode. The light-receiving member is installed, and the pressure inside the deposition apparatus is sufficiently reduced using a diffusion pump. After that, argon gas was turned on to 0.
The surface material was sputtered by sputtering the surface material by causing a glow discharge with a high frequency power of 150 W and depositing a surface layer of Condition No. 101 in Table 1 on the support.

The surface state of the electrophotographic light receiving member A-3i:H produced in this manner was as shown in FIG. 21(C).

A light-receiving member was produced in the same manner as above except that the surface layer was formed as shown in Table 1 Condition No. 102 to 122.

For the electrophotographic light-receiving member as described above, image exposure is performed using the image exposure device shown in FIG. 26 (laser light wavelength 780 nm, spot diameter 80 m), and the exposed image is developed and transferred to form an image. Obtained. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 2 On the surface cylindrical A1 support shown in FIG. 43,
An electrophotographic light-receiving member was formed in the same manner as in Example 1 except that the conditions shown in Table 2 were used.

Note that the first layer is GeH4, SiH4, B2H6/H2
The mass flow controllers 2007, 2008, and 2010 of GeH, 5iHa, and 5iHa were adjusted so that the flow rates of each gas were as shown in Figures 23 and 37.
P9845B).

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper-L.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 3 An electrophotographic light-receiving member was formed in the same manner as in Example 1 except that the conditions shown in Table 3 were used on the superficial cylindrical A1 support-H shown in FIG.

Note that the first layer is G e H4, S IH4, B 2
Ge'H4 and SiH4 mass flow controllers 20072008 and 20'10 were controlled by a computer (HP984'5B) so that the flow rates of each H6/H2 gas were as shown in FIGS. 24 and 38.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and were developed, transferred, and fixed to obtain a visible image on sweat paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 4 On the superficial cylindrical A1 support shown in FIG.
An electrophotographic light-receiving member was formed in the same manner as in Example 1 except that the experiment was carried out under the conditions shown in Table 3.

Note that the first layer is G e H4, SiH4, B 7
The flow rate of each H6/H2 residue was controlled by a computer (HP9845B) using Mascrocontrollers 20072008 and 2010 for Ge)(4 and SiH4) as shown in FIGS. 25 and 39.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 5 On the superficial cylindrical AI support shown in FIG.
An electrophotographic light-receiving member was formed in the same manner as in Example 1 except that the conditions shown in Table 4 were used.

Note that the first layer is GeH4, SiH,..., B2H&/H
2. Adjust the flow rate of each gas as shown in Figure 40.
4 and SiH4 mass flow controller 2007.
2008 and 2010 on computer (HP984
5B).

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 6 The superficial cylindrical At support shown in FIG.

An electrophotographic light-receiving member was formed on a body in the same manner as in Example 1 except that the conditions shown in Table 5 were used.

Note that the @i layer is G eH4, S i H4, B2H6
The GeH4 and SiH4 mass flow controllers 20 adjust the flow rates of each gas as shown in Figure 41.
07.2008 and 2010 on computers (HP
9845B).

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, developed,
A visible image was obtained on plain paper by transferring and fixing.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 7 On the surface cylindrical Al support shown in FIG.
An electrophotographic light-receiving member was formed in the same manner as in Example 1 except that the conditions shown in Table 6 were used.

Note that the first layer is GeHa, SiH4, B2H6/H;
) of each gas as shown in Figure 42.
, and SiH4 mass flow controller 2007.
2008 and 2010 on computer (HP984
5B).

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

[Effects of the Invention] As explained in detail in 1-1 below, the present invention is suitable for image formation using coherent monochromatic light, is easy to manage in production, and is easy to produce during image formation. It can simultaneously and completely eliminate the appearance of interference fringes and spots during reversal development, and it also has photosensitivity, high signal-to-noise ratio characteristics, and good electrical contact with the support. However, it is possible to provide a light-receiving member that is suitable for digital image recording, reduces light reflection on the surface, and can efficiently utilize incident light.

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram of a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIG. 9 is an explanatory diagram of the surface condition of a typical support. FIG. 10 is an explanatory diagram of the layer structure of the light receiving member. FIGS. 11 to 19 are explanatory diagrams for explaining the distribution state of germanium atoms in the first layer. FIG. 20 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 21 is an explanatory diagram of the surface state of the AI support used in Examples. FIG. 22 to FIG. 25 and FIG. 36 to FIG. 42 are explanatory diagrams showing changes in gas flow rate in the example. FIG. 26 shows an image exposure apparatus used in the example. FIGS. 27 to 35 are explanatory diagrams for explaining the distribution state of the substance (C) in the layer region (PN). Figures 43, 44, and 45 show the AI used in the example.
FIG. 3 is an explanatory diagram of the surface state of a support. 1000...Photoreceptive layer 1001...A support 1002...
...First layer 1003... Second layer 1004... Light receiving member 1005...
......Surface layer 2601......Light receiving member for electrophotography 26
02... Semiconductor laser 2603...
....fO lens 2604 ..... Polygon mirror 2605 ..... Plan view of exposure device 2606 ..... Side view of exposure device . [≧Tenee Tenikotan 3 Figure IK4 Figure Shoulder 5 Figure 1M6 Figure (D) @7 rM (A) (B) (C) IF? I-Kyou No. 8 Illustration 9 Picture 9':! 1 $ Figure 11 Figure 12 Figure 13 1! ! 1 1st + Figure @ 1 ta Figure 16 21 n (C) (B) (C), 1lQ- II 22nd Flash 23rd Figure M Showa c) w424 Figure I'S 25 Flash 114 interval (minute) Fig. 26 Fig. 27 Fig. 28 Fig. 29 Fig. 30 Fig. 31 Fig. 32 Fig. C Fig. 33-C Fig. 34 View Fig. 35 41 Figure 11, J 40 60 80 38 Figure 39 Figure Elbow 111rI (Ga) 42 Figure Custom Cow 3ryI (Me'ml 1st Figure Cνm)

Claims (8)

[Claims] (1) A support whose surface has many convex portions whose cross-sectional shape at a predetermined cutting position is a convex shape in which a main peak and a sub-peak are superimposed; an amorphous material containing silicon atoms and germanium atoms; A first layer made of a transparent material, a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity, and a surface layer having an antireflection function were provided in this order from the support side. A light-receiving member having a multi-layered light-receiving layer, wherein the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction, and at least one of the first layer and the second layer is non-uniform. One side contains a substance that controls conductivity, and in the layer region containing the substance,
A light-receiving member characterized in that the distribution state of the substance is non-uniform in the layer thickness direction. (2) The light receiving member according to claim 1, wherein the convex portions are regularly arranged. (3) The light receiving member according to claim 1, wherein the convex portions are arranged periodically. (4) The light-receiving member according to claim 1, wherein each of the convex portions has the same shape in linear approximation. (5) The light-receiving member according to claim 1, wherein the convex portion has a plurality of sub-peaks. (6) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. (7) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. (8) The light receiving member according to claim 1, wherein the convex portion is formed by machining.