JPH0234025B2 - - Google Patents

Description

[Detailed description of the invention]

[Industrial Application Field] The present invention relates to a light-receiving member for electrophotography that is sensitive to electromagnetic waves such as light (here, light in a broad sense refers to ultraviolet rays, visible light, infrared rays, X-rays, γ-rays, etc.). . More specifically, the present invention relates to an electrophotographic light receiving member suitable for using coherent light such as laser light. [Prior Art] As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is A well-known method is to record an image by performing processing such as development, transfer and fixing as necessary. Among these, in image forming methods using electrophotography, image recording is generally performed using a compact and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm). In particular, as a light-receiving material for electrophotography that is suitable when using a semiconductor laser, in addition to the fact that the consistency of the photosensitivity region is much better than that of other types of light-receiving materials, the Vickers hardness is is high,
In terms of being non-polluting from a social perspective, for example,
Amorphous materials containing silicon atoms (hereinafter referred to as "A
-Si) is attracting attention. However, if the photoreceptive layer is a single-layer A-Si layer, in order to maintain its high photosensitivity and ensure the dark resistance of 10 ¹² Ωcm or more required for electrophotography, hydrogen atoms and Since it is necessary to structurally contain halogen atoms or boron atoms in addition to these in a specific amount range in a controlled manner in the layer, it is necessary to strictly control layer formation, etc.
There are considerable limitations on the tolerances in the design of light receiving members. Examples of systems that can expand this design tolerance and make effective use of high light sensitivity even with clogging and a certain degree of low dark resistance include JP-A-54-121743 and JP-A-Sho. As described in Japanese Patent Application Laid-open No. 57-4053 and Japanese Patent Application Laid-open No. 57-4172, the photoreceptive layer is formed into a two or more layered structure in which layers with different conductivity characteristics are laminated to form a depletion layer inside the photoreceptive layer. or JP-A-57-52178, JP-A No. 52179, JP-A No. 57-52178,
A multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or/and on the upper surface of the photoreceptive layer as described in the publications No. 52180, No. 58159, No. 58160, and No. 58161. Light-receiving members with increased apparent dark resistance have been proposed. Through such proposals, A-Si light-receiving members have made dramatic progress in terms of commercialization design tolerances, ease of manufacturing management, and productivity, and have become commercially viable. The speed of development towards this is accelerating. When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference. This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly. Furthermore, as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photosensitive layer decreases, so the above-mentioned interference phenomenon becomes remarkable. This point will be explained with reference to the drawings. FIG. 1 shows light I ₀ incident on a certain layer constituting the light-receiving layer of a light-receiving member, reflected light R ₁ reflected at the upper interface 102, and reflected light R ₂ reflected at the lower interface 101.
It shows. The average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is λ.
If the thickness of a certain layer is uneven with a gradual thickness difference of λ/2n or more, the reflected lights R ₁ and R ₂ will be 2nd =
mλ (m is an integer, reflected light strengthens each other) and 2nd = (m
+1/2) λ (m is an integer, reflected light weakens each other), the amount of absorbed light and transmitted light of a certain layer changes depending on which condition is met. In a light-receiving member with a multilayer structure, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG.
A synergistic negative effect of each interference occurs. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image. Methods to overcome this inconvenience include diamond-cutting the surface of the support to provide unevenness of ±500 Å to 10,000 Å to form a light-scattering surface (for example, Japanese Patent Application Laid-Open No. 162975/1983), and the surface of an aluminum support. A method of providing a light absorption layer by black alumite treatment or dispersing carbon, coloring pigments, or dyes in a resin (for example, Japanese Patent Application Laid-Open No. 165845/1983), A method of providing a light scattering and anti-reflection layer on the surface of the support by alumite treatment or sandblasting to provide fine grain-like irregularities (for example,
16554) etc. have been proposed. However, with these conventional methods, it has not been possible to completely eliminate the interference fringe pattern appearing on the image. In other words, in the first method, only a large number of irregularities of a specific size are provided on the surface of the support, so although it is true that the appearance of interference fringes due to light scattering effects is prevented, as for light scattering, Since the specularly reflected light component still exists, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This was a cause of a decrease in resolution. The second method is at the level of black alumite treatment,
Complete absorption is impossible, and the light reflected on the surface of the support remains. In addition, when a colored pigment-dispersed resin layer is provided, when forming an A-Si light-receiving layer, a degassing phenomenon occurs from the resin layer, and the quality of the formed light-receiving layer is significantly deteriorated. is damaged by plasma during the formation of the A-Si photoreceptive layer, reducing its original absorption function and adversely affecting the subsequent formation of the A-Si photoreceptor layer due to deterioration of the surface condition. There are other inconveniences. In the case of the third method of irregularly roughening the surface of the support, as shown in _FIG .
The _remaining light enters the light receiving layer 302 and becomes transmitted light _I1 . The transmitted light I ₁ is transmitted through the support 30
On the surface of 2, part of the light is scattered and becomes diffused light K ₁ , K ₂ , K ₃ ..., the rest is specularly reflected and becomes reflected light R ₂ , and part of it becomes emitted light R ₃ . Get older and go outside. Therefore, since the emitted light _R3 , which is a component that interferes with the reflected light _R1 , remains, the interference fringe pattern cannot be completely erased. Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution will decrease because light will diffuse within the light-receiving layer and cause halation. There was also the drawback of doing so. In particular, in a multilayered light receiving member, the fourth
As shown in the figure, even if the surface of the support 401 is irregularly roughened, the reflected light R ₂ on the first layer 402, the reflected light R ₁ on the second layer, and the regular reflected light R on the surface of the support 401. ₃
interfere with each other, and an interference fringe pattern is produced depending on the thickness of each layer of the light-receiving member. Therefore, in a multilayer light-receiving member, it has been impossible to completely prevent interference fringes by irregularly roughening the surface of the support 401. Furthermore, when the surface of the support is irregularly roughened by a method such as sandblasting, the degree of roughness varies greatly between lots, and even within the same lot there is non-uniformity in the degree of roughness. However, there was a problem with manufacturing control. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer. Furthermore, if the surface of the support 501 is simply roughened regularly, as shown in FIG. The sloped surface of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502. Therefore, in that part, the incident light is 2nd ₁ = mλ
Or, 2nd ₁ = (m+1/2)λ holds true, resulting in a bright area or a dark area, respectively. In addition, there is non-uniformity in the layer thickness in the entire photoreceptive layer, such that the maximum difference among the respective layer thicknesses d ₁ , d ₂ , d ₃ , d ₄ of the photoreceptor layer is λ/2n or more. A pattern of light and dark stripes appears. Therefore, simply by regularly roughening the surface of the support 501, it is not possible to completely prevent the occurrence of interference fringes. Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure. OBJECTS OF THE INVENTION It is an object of the present invention to provide a new light-sensitive electrophotographic light-receiving member which eliminates the above-mentioned drawbacks. Another object of the present invention is to provide an electrophotographic light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to manufacture and control. Still another object of the present invention is to provide an electrophotographic light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reflective development. Another object of the present invention is to provide a light-receiving member for electrophotography that allows digital image recording using electrophotography, especially digital image recording having halftone information to be performed clearly, with high resolution, and with high quality. be. Yet another object of the present invention is high photosensitivity,
Another object of the present invention is to provide a light-receiving member for electrophotography that has high signal-to-noise ratio characteristics and good electrical contact with a support. [Summary of the Invention] The light-receiving member for electrophotography of the present invention (hereinafter referred to as "light-receiving member") has a cross-sectional shape at a predetermined cutting position with a pitch of 0.3 μm to 500 μm, and a maximum depth of 0.1 μm to 5 μm. An amorphous material consisting of a support having a large number of convex portions formed on its surface in which a sub-peak is superimposed on a main peak, and a silicon atom, a germanium atom, and a hydrogen atom and/or a halogen atom. a first layer made of a material; a second layer made of an amorphous material made of silicon atoms, hydrogen atoms and/or halogen atoms; At least one of the first layer and the second layer also contains a substance that controls conductivity, and in the layer region where the substance is contained, the distribution state of the substance is uniform in the layer thickness direction, The distribution state of germanium atoms contained in the first layer is uniform in the layer thickness direction, and the photoreceptive layer has at least one pair of non-parallel interfaces within the short range. . The present invention will be specifically described below with reference to the drawings. FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention. In the present invention, a multilayer photoreceptive layer having one or more photoreceptive layers is formed on a support (not shown) having an uneven shape smaller than the required resolution of the device along the slope of the unevenness. As shown in the enlarged part of FIG. 6, since the layer thickness of the second layer 602 changes continuously from _d5 to _d6 , the interface 603 and the interface 60
4 and have a tendency toward each other. Therefore, the coherent light incident on this minute portion (short range) 1 causes interference in the minute portion 1, producing a minute interference fringe pattern. Moreover, as shown in FIG. 7, the first layer 701 and the second layer 7
02 interface 703 and the free surface 70 of the second layer 702
4 are non-parallel, as shown in A in FIG. 7, the traveling directions of the reflected light R ₁ and the emitted light R ₃ for the incident light I ₀ are different from each other, so that the interfaces 703 and 704 are parallel. The degree of interference is reduced compared to the case ("B" in FIG. 7). Therefore, as shown in C in Figure 7, when a pair of interfaces are non-parallel ("A") than when they are parallel ("B"), even if there is interference, the brightness of the interference fringe pattern will be lower. The difference becomes negligible. As a result, the amount of light incident on the minute portions is averaged. This is true even if the thickness of the second layer 602 is macroscopically non-uniform (d ₇ ≠ d ₈ ) as shown in FIG. 6, so the amount of incident light is uniform over the entire layer area. (See "D" in Figure 6). Furthermore, to describe the effects of the present invention in the case where coherent light is transmitted from the irradiation side to the second layer when the light-receiving layer has a multilayer structure, as shown in FIG. For I ₀ , the reflected lights R ₁ , R ₂ , R ₃ ,
R ₄ and R ₅ exist. Therefore, in each layer, what has been described above similar to FIG. 7 occurs. Moreover, each layer interface within the micro-section acts as a kind of slit, where diffraction development occurs. Therefore, the effect of interference in each layer appears as a product of interference due to the difference in layer thickness and interference due to diffraction at the layer interface. Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect is further prevented. I can do it. Further, interference fringes generated within a minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Moreover, even if it appears in the image, it will not cause any substantial trouble because it is below the resolution of the eye. In the present invention, the uneven inclined surface is desirably mirror-finished in order to reliably align the reflected light in one direction. The size l (one period of the uneven shape) of the minute portion suitable for the present invention satisfies l≦L, where L is the spot diameter of the irradiated light. In addition, in order to more effectively achieve the object of the present invention, the difference in layer thickness (d ₅ - d ₆ ) in the minute portion l is expressed as d ₅ - _{d 6} ≧λ, where λ is the wavelength of the irradiated light. /2n (n: refractive index of the second layer 602). In the present invention, within the layer thickness of a microscopic portion l of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"), at least any two layer interfaces are in a non-parallel relationship. The layer thickness of each layer is controlled within the microcolumn, but if this condition is satisfied, any two layer interfaces may be in a parallel relationship within the microcolumn. However, the layers forming the parallel layer interface can be any two layers.
It is desirable that the layer be formed to have a uniform layer thickness over the entire region so that the difference in layer thickness at two positions is λ/2n (n: refractive index of the layer) or less. In order to more effectively and easily achieve the object of the present invention, plasma is used to form each of the first layer and second layer constituting the photoreceptive layer because the layer thickness can be precisely controlled at the optical level. Gas phase method (PCVD method), light
CVD method and thermal CVD method are adopted. As methods for processing the support to achieve the objects of the present invention, chemical methods such as chemical etching and electroplating, physical methods such as vapor deposition and sputtering, and mechanical methods such as lathe processing can be used. However, in order to easily manage production, mechanical processing methods such as lathes are preferred. For example, when processing the support with a lathe or the like, as shown in Fig. 17, a cutting tool 1 having a V-shaped cutting edge is rubbed with diamond powder to give the desired shape. For example, by fixing the cylindrical support at a predetermined position on a cutting machine and regularly moving it in a predetermined direction while rotating it according to a program designed in advance as desired, the surface of the support can be accurately cut. By doing so, the desired uneven shape, pitch, and depth are formed. The linear protrusion created by the unevenness formed by such a cutting method has a spiral structure centered on the central axis of the cylindrical support. The spiral structure of the protrusion may be a double or triple spiral structure, or a crossed spiral structure. Alternatively, a linear structure along the central axis may be introduced in addition to the spiral structure. In order to enhance the effects of the present invention and to facilitate processing control, it is preferable that the convex portions within a predetermined cross section of the support of the present invention have the same shape in a linear approximation. Further, the protrusions are preferably arranged regularly or periodically in order to enhance the effects of the present invention. Furthermore, in order to further enhance the effect of the present invention and increase the adhesion between the light-receiving layer and the support,
It is preferable to have a plurality of sub-peaks. In addition to each of these, in order to efficiently scatter incident light in one direction, the convex portion may be symmetrical (FIG. 9A) or asymmetrical (FIG. 9B) around the main peak.
It is preferable that they be unified. However, in order to increase the degree of freedom in controlling the processing of the support, it is better to have both of them mixed together. In the present invention, each dimension of the irregularities provided on the surface of the support in a controlled manner is set in such a way that the object of the present invention can be achieved as a result, taking into account the following points. That is, the A-Si layer constituting the first photoreceptive layer is
The structure is sensitive to the condition of the surface on which the layer is formed, and the quality of the layer changes greatly depending on the surface condition. Therefore, it is necessary to set the dimension of the irregularities provided on the surface of the support so as not to cause a deterioration in the layer quality of the A--Si photoreceptive layer. Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation. Further, when cleaning the blade, there is a problem that the blade gets damaged quickly. As a result of examining the above-described problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, the pitch of the recesses on the surface of the support is preferably 500 μm to 0.3 μm, more preferably 200μm
It is desirable that the thickness is ~1 μm, optimally 50 μm to 5 μm. Also, the maximum depth of the recess is preferably 0.1 μm to 5 μm.
m, more preferably 0.3μm to 3μm, optimally 0.6μm
It is desirable that the thickness is between m and 2 μm. When the pitch and maximum depth of the recesses on the support surface are within the above range, the slope of the slope of the recesses (or linear protrusions) is:
Preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees
degree, optimally 4 degrees to 10 degrees. Further, the maximum difference in layer thickness due to non-uniformity of the layer thickness of each layer deposited on such a support is preferably 0.1 μm to 2 μm, more preferably 0.1 μm within the same pitch.
It is desirable that the thickness be 1.5 μm, most preferably 0.2 μm to 1 μm. Next, an example of a light-receiving member having a multilayer structure according to the present invention will be shown. FIG. 10 is a schematic structural diagram schematically shown to explain the layer structure of a light-receiving member which is a preferred embodiment of the present invention. A light-receiving member 1004 shown in FIG. 10 has a light-receiving layer 1000 on a support 1001 for the light-receiving member, and the light-receiving layer 1000 has a free surface 1005 on one end surface. . The photoreceptive layer 1000 is formed from a-Si (hereinafter referred to as "a-SiGe") containing germanium atoms, hydrogen atoms, and halogen atoms from the support 1001 side.
The first layer (G) consists of
1002 and a second layer (S) 1003 made of a-Si(H,X) and having photoconductivity are laminated in this order. The germanium atoms contained in the first layer (G) 1002 are continuously and uniformly distributed in the layer thickness direction of the first layer (G) 1002 and in the in-plane direction parallel to the surface of the support 1001. The first layer (G)1 so that
Contained in 002. Light receiving member 100 according to a preferred embodiment of the present invention
4, at least the first layer (G) is 1002
contains a substance (C) that controls conduction properties,
The first layer (G) 1002 is provided with the desired conductive properties. In the present invention, the substance (C) controlling the conductive properties contained in the first layer (G) 1002 is the substance (C) contained in the first layer (G) 1002.
It may be contained uniformly throughout the entire layer region of the first layer (G) 1002, or may be contained unevenly in some layers of the first layer (G) 1002. In the present invention, the first layer (G) is made such that the substance (C) that controls the conduction characteristics is unevenly distributed in a part of the layer region of the first layer (G).
When it is contained in (G), the layer region (PN) containing the substance (C) is preferably provided as an end layer region of the first layer (G). In particular, the first layer
When the layer region (PN) is provided as the end layer region on the support side of (G), the layer region (PN)
Injection of specific polar charges from the support into the photoreceptive layer can be effectively prevented by appropriately selecting the type and content of the substance (C) contained therein as desired. I can do it. In the light-receiving member of the present invention, the substance (C) capable of controlling conduction properties is added to the first layer (G) constituting a part of the light-receiving layer as described above. (G)
It is preferable to contain the above-mentioned components uniformly over the entire area or unevenly distributed in the layer thickness direction. Substance (C) may also be included. When the substance (C) is contained in the second layer (S), the type, amount and manner of the substance (C) contained in the first layer (G) depending on,
The type of substance (C) to be contained in the second layer (S), its content, and the manner in which it is contained are determined as appropriate. In the present invention, when the substance (C) is contained in the second layer (S), the substance (C) is preferably contained in a layer region including at least the contact interface with the first layer (G). It is desirable to include C). In the present invention, the substance (C) may be evenly contained in the entire layer area of the second layer (S),
Alternatively, it may be contained uniformly in a part of the layer region. When both the first layer (G) and the second layer (S) contain a substance (C) that controls conduction properties, the first layer (G)
a layer region containing the substance (C) in;
It is desirable that the second layer (S) and the layer region containing the substance (C) be provided in contact with each other. Further, the substance (C) contained in the first layer (G) and the second layer (S) is of the same type in the first layer (G) and the second layer (S). However, it is okay to be of a different type, and
The content may be the same or different in each layer. However, in the present invention, if the substance (C) contained in each layer is the same in both layers, the content in the first layer (G) may be sufficiently increased. Alternatively, it is preferable that each desired layer contains substances (C) having different electrical characteristics. In the present invention, at least in the first layer (G) and/or the second layer (S) constituting the photoreceptive layer,
By containing the substance (C) that controls the conduction characteristics, the layer region containing the substance (C) [a part or all of the first layer (G) or the second layer (S)] The conduction properties of any of the regions can be arbitrarily controlled as desired. Examples of such substances include so-called impurities in the semiconductor field, which are used in the present invention. Examples include p-type impurities that impart p-type conductivity to a-SiGe (H, Specifically, p-type impurities include atoms belonging to a group of the periodic table (group atoms), such as B (boron), Al (aluminum), Ga (gallium), In (indium), and Tl (thallium). Among them, B and Ga are particularly preferably used. Examples of n-type impurities include atoms belonging to a group of the periodic table (group atoms), such as P (phosphorus), As (arsenic), Sb (antimony), Bi (bismuth), etc.
In particular, P and As are preferably used. In the present invention, the content of the substance (C) that controls conduction properties in the layer region (PN) is determined by the conductivity required for the layer region (PN) or the content of the substance (C) that controls conduction characteristics. When (PN) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support. In addition, the relationship with other layer regions provided in direct contact with the layer region (PN) and the characteristics at the contact interface with the other layer regions is also considered, and the material controlling the conduction characteristics is determined. The content is selected appropriately. In the present invention, the content of the substance (C) that controls conduction properties contained in the layer region (PN) is as follows:
Preferably 0.01 to 5×10 ⁴ atomic ppm, more preferably 0.5 to 1×10 ⁴ atomic ppm, optimally 1 to
It is desirable that the amount is 5×10 ³ atomic ppm. In the present invention, the content of the substance (C) that controls conduction characteristics in the layer region (PN) containing the substance (C) is preferably 30 atomic ppm or more, more preferably 50 atomic ppm or more. , optimally 100atomic
ppm or more, for example, when the substance (C) to be contained is the above-mentioned p-type impurity, when the free surface of the photoreceptive layer is subjected to polar charging treatment, the light reception from the support side is reduced. The substance to be contained can effectively prevent the injection of electrons into the layer.
When (C) is the above-mentioned n-type impurity, it effectively blocks the injection of holes from the support side into the photoreceptive layer when the free surface of the photoreceptor layer is subjected to polar charging treatment. I can do it. In the above case, as described above, the layer region (Z) excluding the layer region (PN) contains a substance (C) that controls the conductive properties contained in the layer region (PN). It may contain a substance (C) that governs the conduction characteristics of a conduction type polarity different from that of the conduction type polarity, or it may contain a substance (C) that governs the conduction characteristics of a conduction type of the same polarity. It may be contained in an amount much smaller than the actual amount contained in the layer region (PN). In such a case, the content of the substance (C) that controls the conduction characteristics contained in the layer region (Z) depends on the polarity and content of the substance (C) contained in the layer region (PN). It is determined as desired depending on the amount, but preferably 0.001 to 1000 atomic
ppm, more preferably 0.05 to 500 atomic ppm, optimally 0.1 to 200 atomic ppm. In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is preferably is preferably 30 atomic ppm or less. In the present invention, the photoreceptive layer includes a layer region containing a substance controlling conductivity having a conductivity type of one polarity and a substance controlling conductivity having a conductivity type of the other polarity. It is also possible to provide a so-called depletion layer in the contact region by providing the layer region in direct contact with the contact region. For example, the layer region containing the p-type impurity and the layer region containing the n-type impurity are provided in the photoreceptive layer so as to be in direct contact with each other, so-called p-n.
A junction can be formed to provide a depletion layer. In the present invention, germanium atoms are not contained in the second layer (S) provided on the first layer (G), and a photoreceptive layer is formed in such a layer structure. In particular, it is possible to obtain a light-receiving member that has excellent photosensitivity to light in the entire range of wavelengths from relatively short wavelengths to relatively long wavelengths, including the relatively visible light region. In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed throughout the entire layer, so the first layer (G) and the second layer (S) are When a semiconductor laser or the like is used, the first layer (G) can substantially absorb the long wavelength light that cannot be absorbed by the second layer (S). can be completely absorbed, and interference due to reflection from the support surface can be more effectively prevented. Further, in the light receiving member of the present invention, the first layer
Since the amorphous materials constituting (G) and the second layer (S) each have a common constituent element of silicon atoms, chemical stability can be sufficiently ensured at the laminated interface. has been done. In the present invention, the content of germanium atoms contained in the first layer (G) is appropriately determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 to 1. 9.5× ¹⁰⁵ atomic ppm,
More preferably, it is 100 to 8×10 ⁵ atomic ppm, most preferably 500 to 7×10 ⁵ atomic ppm. In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light-receiving member to ensure that the desired properties are fully imparted to the light-receiving member. In the present invention, the layer thickness T _B of the first layer (G) is preferably 30 Å to 50 μ, more preferably 40 Å to
It is desirable that the thickness be 40μ, optimally 50Å to 30μ. Further, the layer thickness T of the second layer (S) is preferably
0.5~90μ, more preferably 1~80μ, optimally 2~
It is desirable to set it to 50μ. The sum of the layer thickness T _B of the first layer (G) and the layer thickness T of the second layer (S) (T _B +T) is based on the characteristics required for both layers and the characteristics required for the entire photoreceptive layer. It is determined as desired when designing the layers of the light-receiving member based on the organic relationship between the properties and the properties. In the light receiving member of the present invention, the above (T _B
The numerical range of +T) is preferably 1 to
100μ, more preferably 1-80μ, optimally 2-50μ
It is desirable that this is done. In a more preferred embodiment of the present invention,
The above layer thickness T _B and layer thickness T are usually T _B /
When satisfying the relationship T≦1, it is desirable that appropriate numerical values be selected for each. In selecting the numerical values of the layer thickness T _B and the layer thickness T in the above case, it is more preferable that T _B /T≦0.9,
Optimally, it is desirable that the values of layer thickness T _B and layer thickness T be determined so that the relationship T _B /T≦0.8 is satisfied. In the present invention, the content of germanium atoms contained in the first layer (G) is 1×10 ⁵ atomic
ppm or more, it is desirable that the layer thickness T _B of the first layer (G) is considerably thinner, preferably 30μ or less, more preferably 25μ or less, and optimally
It is desirable that the thickness be 20μ or less. In the present invention, specific examples of the halogen atoms (X) contained in the first layer (G) and second layer (S) constituting the photoreceptive layer as necessary include fluorine, Examples include chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. In the present invention, the first layer (G) composed of a-SiGe (H, It is done by law. For example, by the glow discharge method, a
- To form the first layer (G) composed of SiGe (H, A raw material gas for supplying Ge that can supply a hydrogen atom (H) and/or a raw material gas for introducing a halogen atom (X) as needed are placed in a deposition chamber whose interior can be kept at a reduced pressure. It is sufficient to introduce the a-SiGe (H, . In addition, when forming by a sputtering method, for example, a target composed of Si or a target composed of Si is formed in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases.
Using two targets composed of Ge,
Or using a mixed target of Si and Ge,
Diluted with diluent gas such as He or Ar as necessary
A raw material gas for supplying Ge and a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) are introduced into the deposition chamber for sputtering as necessary to form a desired gas plasma atmosphere. All you have to do is sputter the target. In the case of the ion plating method, for example, polycrystalline silicon or single crystal silicon and polycrystalline germanium or single crystal germanium are housed in a deposition boat as evaporation sources, and the evaporation sources are heated using resistance heating method or electron beam method ( This can be carried out in the same manner as in the case of sputtering, except that the flying evaporates are heated and evaporated by EB method or the like and passed through a desired gas plasma atmosphere. Substances that can be used as raw material gas for supplying Si used in the present invention include SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ ,
Gaseous silicon hydride (silanes) such as Si ₄ H ₁₀ , which can be gasified or gasified, can be effectively used, especially because of its ease of handling during layer creation work, good Si supply efficiency, etc. In this respect, SiH ₄ and Si ₂ H ₆ are preferred. Substances that can be used as raw material gas for Ge supply include:
GeH ₄ , Ge ₂ H ₆ , Ge ₃ H ₈ , Ge ₄ H ₁₀ , Ge ₅ H ₁₂ ,
Ge ₆ H ₁₄ , Ge ₇ H ₁₆ , Ge ₈ H ₁₈ , Ge ₉ H ₂₀ and other germanium hydrides in a gaseous state or that can be gasified are mentioned as those that can be effectively used, especially during layer formation work. GeH ₄ , Ge ₂ H ₆ , and Ge ₃ H ₈ are preferred in terms of ease of handling, good Ge supply efficiency, and the like. Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into Further, a silicon hydride compound containing a halogen atom, which is in a gaseous state or can be gasified and whose constituent elements are a silicon atom and a halogen atom, can also be mentioned as an effective compound in the present invention. Specifically, halogen compounds that can be suitably used in the present invention include fluorine, chlorine, bromine,
Iodine halogen gas, BrF, ClF, ClF ₃ ,
Examples include interhalogen compounds such as BrF ₅ , BrF ₃ , IF ₃ , IF ₇ , ICl, and IBr. Preferred examples of silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, include silicon halides such as SiF ₄ , Si ₂ F ₆ , SiCl ₄ , and SiBr ₄ . I can do it. When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, the material gas that can supply Si together with the material gas for supplying Ge may be used as a material gas. The first layer (G) consisting of a-SiGe containing halogen atoms can be formed on the desired support without using silicon hydride gas.
can be formed. When creating the first layer (G) containing halogen atoms according to the glow discharge method, basically, for example, Si
Silicon halide, which will be the raw material gas for supply, germanium hydride, which will be the raw material gas for Ge supply, and Ar.
Gases such as H ₂ and He are introduced into the deposition chamber for forming the first layer (G) at a predetermined mixing ratio and gas flow rate, and a glow discharge is generated to create a plasma atmosphere of these gases. The first layer (G) can be formed on a desired support by forming a A desired amount of hydrogen gas or a silicon compound gas containing hydrogen atoms may be mixed with the gas to form a layer. Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio. In order to introduce halogen atoms into the layer formed by either the sputtering method or the ion plating method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to form a plasma atmosphere of the gas. In addition, when introducing hydrogen atoms, a raw material gas for introducing hydrogen atoms, for example, H ₂ or gases such as the above-mentioned silanes and/or germanium hydride, is introduced into the deposition chamber for sputtering. It is sufficient to form a plasma atmosphere of the gases. In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as raw material gases for introducing halogen atoms, but in addition, HF, HCl,
Hydrogen halides such as HBr, HI, SiH ₂ F ₂ ,
Halogen-substituted silicon hydrides such as SiH ₂ I ₂ , SiH ₂ Cl ₂ , SiHCl ₃ , SiH ₂ Br ₂ , SiHBr ₃ , and GeHF ₃ ,
GeH ₂ F ₂ , GeH ₃ F, GeHCl ₃ , GeH ₂ Cl ₂ ,
GeH ₃ Cl, GeHBr ₃ , GeH ₂ Br ₂ , GeH ₃ Br,
Halides containing hydrogen atoms as one of their constituent elements, such as germanium hydrogenated halides such as GeHI ₃ , GeH ₂ I ₂ , GeH ₃ I, GeF ₄ , GeCl ₄ , GeBr ₄ , GeI ₄ ,
Germanium halides such as GeF ₂ , GeCl ₂ , GeBr ₂ , GeI ₂ and other gaseous or gasifiable substances can also be mentioned as effective starting materials for forming the first layer (G). Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer when forming the first layer (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen. In order to structurally introduce hydrogen atoms into the first layer (G), in addition to the above, H ₂ , SiH ₄ , Si ₂ H ₆ ,
Silicon hydride such as Si ₃ H ₈ , Si ₄ H ₁₀ with germanium or germanium compound for supplying Ge, or GeH ₄ , Ge ₂ H ₆ , Ge ₃ H ₈ , Ge ₄ H ₁₀ , Ge ₅ H ₁₂ ,
Generating a discharge by coexisting germanium hydride such as Ge ₆ H ₁₄ , Ge ₇ H ₁₆ , Ge ₈ H ₁₈ , Ge ₉ H ₂₀ and silicon or a silicon compound for supplying Si in a deposition chamber. But it can be done. In a preferred example of the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amount of hydrogen atoms and halogen atoms contained in the first layer (G) of the light receiving member to be formed is The sum (H+X) is preferably
0.01~40atomic%, more preferably 0.05~30atomic
%, optimally 0.1 to 25 atomic%. In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( The amount of the starting material used to contain X) introduced into the deposition system, the discharge force, etc. may be controlled. In the present invention, in order to form the second layer (S) composed of a-Si (H,
From among the starting materials (I) for forming the layer (G), use the starting materials [starting materials for forming the second layer (S)] excluding the starting materials that will become the raw material gas for supplying Ge. This can be carried out according to the same method and conditions as in the case of forming the first layer (G). That is, in the present invention, to form the second layer (S) composed of a-Si(H,X), a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion plating method is used. It is made by vacuum deposition method. For example, a second layer (S) composed of a-Si(H,X) is formed by a glow discharge method.
In order to form, basically, in addition to the above-mentioned raw material gas for supplying Si that can supply silicon atoms (Si), hydrogen atoms (H) and/or halogen atoms (X) are introduced as necessary. A raw material gas for a-Si(H, ) may be formed. In addition, when forming by sputtering, for example, when sputtering a target composed of Si in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases, hydrogen atoms (H ) or/and a gas for introducing halogen atoms (X) may be introduced into the deposition chamber for sputtering. In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amounts of hydrogen atoms and halogen atoms contained in the second layer (S) constituting the photoreceptive layer to be formed The sum (H+X) is preferably 1 to
It is desirable that the content be 40 atomic %, more preferably 5 to 30 atomic %, most preferably 5 to 25 atomic %. A layer region (PN) containing a substance (C) that controls conduction properties, such as a group group atom or a group group atom, is structurally introduced into the layer constituting the photoreceptive layer. To form the photoreceptive layer, during layer formation, the starting material for introducing the group atom or the starting material for introducing the group atom is placed in a gaseous state in a deposition chamber together with other starting materials for forming the photoreceptive layer. It would be good to introduce it. As a starting material for introducing such group atoms, it is desirable to employ a material that is gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. Specifically, starting materials for introducing such group group atoms include B ₂ H ₆ , B ₄ H ₁₀ , B ₅ H ₉ , B ₅ H ₁₁ ,
Boron hydride such as B ₆ H ₁₀ , B ₆ H ₁₂ , B ₆ H ₁₄ , BF ₃ ,
Examples include boron halides such as BCl ₃ and BBr ₃ .
In addition, AlCl ₃ , GaCl ₃ , Ga(CH ₃ ) ₃ , InCl ₃ ,
TCl ₃ etc. can also be mentioned. In the present invention, the starting materials for introducing group atoms that are effectively used for introducing phosphorus atoms include hydrogenated phosphorus such as PH ₃ , P ₂ H ₄ , PH ₄ I, PF ₃ ,
Examples include phosphorus halides such as _PF5 , _PCl3 , _PCl5 , _PBr3 , _PBr5 , _PI3 . In addition, AsH ₃ , AsF ₃ ,
AsCl ₃ , AsBr ₃ , AsF ₅ , SbH ₃ , SbF ₃ , SbF ₅ ,
SbCl ₃ , SbCl ₅ , SiH ₃ , SiCl ₃ , BiBr ₃ and the like can also be mentioned as effective starting materials for the introduction of group atoms. The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, Al,
Examples include metals such as Cr, Mo, Au, Nb, Ta, V, Ti, Pt, and Pd, and alloys thereof. As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. . Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side. For example, if it is glass, NiCr,
Al, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, Pt,
Conductivity can be imparted by providing a thin film made of Pd, In ₂ O ₃ , SnO 2 _, ITO (In ₂ O ₃ +SnO ₂ ), etc., or if it is a synthetic resin film such as polyester film, NiCr, Al ,Ag,Pb,Zn,Ni,
A thin film of metal such as Au, Cr, Mo, Ir, Nb, Ta, V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the metal, Conductivity is imparted to the surface. The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the light-receiving member 1004 in FIG. If used as a receiving member for continuous high-speed copying,
It is desirable to have an endless belt shape or a cylindrical shape. The thickness of the support is determined appropriately so that a desired light-receiving member is formed, but if flexibility is required as a light-receiving member, the support can sufficiently function as a support. It is made as thin as possible within this range. However, in such a case, from the viewpoint of manufacturing and handling of the support, mechanical strength, etc., it is preferable to
It is considered to be 10μ or more. Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained. FIG. 11 shows an example of a light-receiving member manufacturing apparatus. Gas cylinders 1102 to 1106 in the diagram include
The raw material gas for forming the light receiving member of the present invention is sealed, for example, 1102
is SiH ₄ gas (99.999% purity) cylinder, 1103
is GeH ₄ gas (99.999% purity) cylinder, 1104
is SiF ₄ gas (99.99% purity) cylinder, 1105 is
_B2H6 gas diluted with _H2 (purity 99.999% _or less)
It is abbreviated as B ₂ H ₆ /H ₂ . ) cylinder, 1106 is a H ₂ gas (99.999% purity) cylinder. In order to flow these gases into the reaction chamber 1101, valves 112 of gas cylinders 1102 to 1106 are used.
2-1126, confirm that the leak valve 1135 is closed, and also check that the inflow valve 1112-1126 is closed.
After confirming that the outflow valves 1117 to 1121 and the auxiliary valves 1132 and 1133 are open, the main valve 1134 is first opened to exhaust the reaction chamber 1101 and each gas pipe. Next, when the reading on the vacuum gauge 1136 reaches approximately 5×10 ^-6 torr, the auxiliary valves 1132 and 1133 and the outflow valves 1117 to 1121 are closed. Next, to give an example of forming a light-receiving layer on the cylindrical substrate 1137, the gas cylinder 11
SiH ₄ gas from 02, from gas cylinder 1103
GeH ₄ gas, B ₂ H ₆ /H ₂ from gas cylinder 1105
Gas, H ₂ gas from the gas cylinder 1106 is supplied to the outlet pressure gauges 1127, 1128, 113 by opening the valves 1122, 1123, 1125, 1126, respectively.
Adjust the pressure of 0,1131 to 1Kg/cm ² and gradually open the inflow valves 1112, 1113, 1115, 1116, and the mass flow controller 1107,
1108, 1110, and 1111, respectively. Subsequently, the outflow valves 1117, 111
8, 1120, 1121, auxiliary valve 1132,
1133 is gradually opened to supply each gas to the reaction chamber 11.
01. _SiH4 gas flow rate at this time,
Outflow valve 111 so that the ratio of GeH ₄ gas flow rate to B ₂ H ₆ /H ₂ gas flow rate to H ₂ gas flow rate is the desired value.
7, 1118, 1120, and 1121, and also adjust the opening of the main valve 1134 while checking the reading on the vacuum gauge 1136 so that the pressure inside the reaction chamber 1101 reaches the desired value. And the base 11
The temperature of 37 is raised to 50~ by heating heater 1138.
After confirming that the temperature is set in the range of 400° C., the power source 1140 is set to the desired power to generate a glow discharge in the reaction chamber 1101 to deposit the first layer (G) on the substrate 1137. form. Similar conditions and procedures are followed except that when the first layer (G) is formed to the desired layer pressure, the outflow valve 1118 is completely closed and the discharge conditions are changed as necessary. By maintaining the glow discharge for the desired time,
A second layer (S) containing substantially no germanium atoms can be formed on the first layer (G). Substance that controls conductivity (C) in the second layer (S)
In order to contain gases such as B ₂ H ₆ and PH ₃ in the deposition chamber 110 when forming the second layer (S),
It can be added to other gases introduced into 1. In this way, a light-receiving layer composed of the first layer (G) and the second layer (S) is formed on the substrate 1137. During layer formation, the base 1137 is preferably rotated at a constant speed by a motor 1139 in order to ensure uniform layer formation. Examples will be described below. Example 1 An Al support (length (L) 357 mm, diameter (r) 80 mm) was
It was machined using a lathe as shown in FIG. 12B. Next, under the conditions shown in Table 1, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures. The surface state of the A-Si:H electrophotographic light-receiving member thus produced was as shown in FIG. 12C. Regarding these light-receiving members for electrophotography, the image exposure device (laser light wavelength
Image exposure was performed at 780 nm (spot diameter: 80 μm), and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 2 An Al support (length (L) 357 mm, diameter (r) 80 mm) was machined using a lathe as shown in FIGS. 14, 15, and 16. Next, under the conditions shown in Table 2, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures. Regarding these light-receiving members for electrophotography, the image exposure device (laser light wavelength
Image exposure was performed at 780 nm (spot diameter: 80 μm), and the image was developed and transferred to obtain an image. This image forming process was repeated 100,000 times. In this case, no interference fringe pattern was observed in any of the images obtained, and the characteristics were sufficient for practical use.
Moreover, there was no difference between the initial image and the 100,000th image, and the images were of high quality. Example 3 An Al support (length (L) 357 mm, diameter (r) 80 mm) was machined using a lathe as shown in FIGS. 14, 15, and 16. Next, under the conditions shown in Table 3, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures. Regarding these electrophotographic light receiving members, the first
Image exposure device shown in Figure 3 (laser light wavelength
Image exposure was performed at 780 nm (spot diameter: 80 μm), and the image was developed and transferred to obtain an image. In this case, no interference fringe pattern is observed in the obtained image,
It was sufficient for practical use. Example 4 An Al support (length (L) 357 mm, diameter (r) 80 mm) was machined using a lathe as shown in FIGS. 14, 15, and 16. Next, under the conditions shown in Table 4, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures. Regarding these light-receiving members for electrophotography, the image exposure device (laser light wavelength
Image exposure was performed at 780 nm (spot diameter: 80 μm), and the image was developed and transferred to obtain an image. In this case, no interference fringe pattern is observed in the obtained image,
It was sufficient for practical use. Example 5 An Al support (length (L) 357 mm, diameter (r) 80 mm) was machined using a lathe as shown in FIGS. 14, 15, and 16. Next, under the conditions shown in Table 5, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures. Regarding these light-receiving members for electrophotography, the image exposure device (laser light wavelength
Image exposure was performed at 780 nm (spot diameter: 80 μm), and the image was developed and transferred to obtain an image. In this case, no interference fringe pattern is observed in the obtained image,
It was sufficient for practical use. Example 6 An Al support (length (L) 357 mm, diameter (r) 80 mm) was machined using a lathe as shown in FIGS. 14, 15, and 16. Next, under the conditions shown in Table 6, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures. Regarding these light-receiving members for electrophotography, the image exposure device (laser light wavelength
Image exposure was performed at 780 nm (spot diameter: 80 μm), and the image was developed and transferred to obtain an image. In this case, no interference fringe pattern is observed in the obtained image,
It was sufficient for practical use. Example 7 An Al support (length (L) 357 mm, diameter (r) 80 mm) was machined using a lathe as shown in FIGS. 14, 15, and 16. Next, under the conditions shown in Table 7, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures. Regarding these light-receiving members for electrophotography, the image exposure device (laser light wavelength
Image exposure was performed at 780 nm (spot diameter: 80 μm), and the image was developed and transferred to obtain an image. In this case, no interference fringe pattern is observed in the obtained image,
It was sufficient for practical use. Example 8 An Al support (length (L) 357 mm, diameter (r) 80 mm) was machined using a lathe as shown in FIGS. 14, 15, and 16. Next, under the conditions shown in Table 8, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures. Regarding these light-receiving members for electrophotography, the image exposure device (laser light wavelength
Image exposure was performed at 780 nm (spot diameter: 80 μm), and the image was developed and transferred to obtain an image. In this case, no interference fringe pattern is observed in the obtained image,
It was sufficient for practical use. Example 9 An Al support (length (L) 357 mm, diameter (r) 80 mm) was machined using a lathe as shown in FIGS. 14, 15, and 16. Next, under the conditions shown in Table 9, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures. Regarding these light-receiving members for electrophotography, the image exposure device (laser light wavelength
Image exposure was performed at 780 nm (spot diameter: 80 μm), and the image was developed and transferred to obtain an image. In this case, no interference fringe pattern is observed in the obtained image,
It was sufficient for practical use. Example 10 An Al support (length (L) 357 mm, diameter (r) 80 mm) was machined using a lathe as shown in FIGS. 14, 15, and 16. Next, under the conditions shown in Table 10, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures. Regarding these light-receiving members for electrophotography, the image exposure device (laser light wavelength
Image exposure was performed at 780 nm (spot diameter: 80 μm), and the image was developed and transferred to obtain an image. In this case, no interference fringe pattern is observed in the obtained image,
It was sufficient for practical use. Example 11 An Al support (length (L) 357 mm, diameter (r) 80 mm) was machined using a lathe as shown in FIGS. 14, 15, and 16. Next, under the conditions shown in Table 11, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures. Regarding these light-receiving members for electrophotography, the image exposure device (laser light wavelength
Image exposure was performed at 780 nm (spot diameter: 80 μm), and the image was developed and transferred to obtain an image. In this case, no interference fringe pattern is observed in the obtained image,
It was sufficient for practical use. Example 12 An Al support (length (L) 357 mm, diameter (r) 80 mm) was machined using a lathe as shown in FIGS. 14, 15, and 16. Next, under the conditions shown in Table 12, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures. Regarding these light-receiving members for electrophotography, the image exposure device (laser light wavelength
Image exposure was performed at 780 nm (spot diameter: 80 μm), and the image was developed and transferred to obtain an image. In this case, no interference fringe pattern is observed in the obtained image,
It was sufficient for practical use. Example 13 An Al support (length (L) 357 mm, diameter (r) 80 mm) was machined using a lathe as shown in FIGS. 14, 15, and 16. Next, under the conditions shown in Table 13, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures. Regarding these light-receiving members for electrophotography, the image exposure device (laser light wavelength
Image exposure was performed at 780 nm (spot diameter: 80 μm), and the image was developed and transferred to obtain an image. In this case, no interference fringe pattern is observed in the obtained image,
It was sufficient for practical use. Example 14 An Al support (length (L) 357 mm, diameter (r) 80 mm) was machined using a lathe as shown in FIGS. 14, 15, and 16. Next, under the conditions shown in Table 14, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures. Regarding these light-receiving members for electrophotography, the image exposure device (laser light wavelength
Image exposure was performed at 780 nm (spot diameter: 80 μm), and the image was developed and transferred to obtain an image. In this case, no interference fringe pattern is observed in the obtained image,
It was sufficient for practical use. Example 15 Regarding Example 1 to Example 14, H ₂
with _H2 instead of _B2H6 gas diluted to 3000vol _ppm
Electrophotographic light-receiving members were produced using PH ₃ gas diluted to 3000 vol ppm. The other manufacturing conditions are as follows from Example 1 to Example 14.
I did the same as before. Regarding these electrophotographic light-receiving members, Part 13
The image exposure device shown in the figure (laser light wavelength 780mm,
Image exposure was performed with a spot diameter of 80 μm), and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in any of the images, which were sufficient for practical use. [Effects of the Invention] As described above in detail, according to the present invention,
It is suitable for image formation using coherent monochromatic light, easy to manage, and can simultaneously and completely eliminate the interference fringe pattern that appears in image formation and the appearance of spots during reversal development. has high light sensitivity,
It has a high signal-to-noise ratio characteristic and good electrical contact with the support, and can provide a light-receiving member suitable for digital image recording.

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【table】 [Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram of a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIG. 9 is an explanatory diagram of the surface condition of each typical support. FIG. 10 is an explanatory diagram of the layer structure of the light receiving member. FIG. 11 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. 12th
The figure is an explanatory diagram of the surface state of the Al support used in the examples. FIG. 13 is an explanatory diagram of the image exposure apparatus used in the example. FIG. 14, FIG. 15, and FIG. 16 are explanatory diagrams of the surface state of the Al support used in the examples. FIG. 17 is an explanatory diagram for explaining the processing of the support. 1000... Light receiving layer, 1001... Al support, 1002... First layer, 1003... Second layer, 1004... Light receiving member, 1005... Free surface of light receiving member, 1301... Electrophotographic light-receiving member, 1302...Semiconductor laser, 1303
...fθ lens, 1304 ...polygon mirror, 1
305... A plan view of the exposure apparatus, 1306... A side view of the exposure apparatus.

Claims (1)

[Claims] 1. The cross-sectional shape at a predetermined cutting position is 0.3 μm to 500 μm.
A support having many convex portions formed on its surface with a convex shape in which sub peaks are superimposed on a main peak with a maximum depth of 0.1 μm to 5 μm, and silicon atoms, germanium atoms, and hydrogen atoms. and/or a halogen atom, and a second layer made of an amorphous material that includes silicon atoms and hydrogen atoms and/or halogen atoms. a photoreceptive layer consisting of a light-receiving layer, at least one of the first layer and the second layer also contains a substance that controls conductivity, and in the layer region where the substance is contained, the distribution of the substance is the state is uniform in the layer thickness direction, and the distribution state of germanium atoms contained in the first layer is uniform in the layer thickness direction, and the photoreceptive layer has at least one layer within the short range.
A light-receiving member for electrophotography, characterized by having at least a pair of non-parallel interfaces. 2. The light-receiving member for electrophotography according to claim 1, wherein the convex portions are regularly arranged. 3. The light-receiving member for electrophotography according to claim 1, wherein the convex portions are arranged periodically. 4. The light-receiving member for electrophotography according to claim 1, wherein each of the convex portions has the same shape in a linear approximation. 5. The light-receiving member for electrophotography according to claim 1, wherein the convex portion has a plurality of sub-peaks. 6. The electrophotographic light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. 7. The electrophotographic light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. 8. The electrophotographic light-receiving member according to claim 1, wherein the convex portion is formed by mechanical processing. 9. The light-receiving member for electrophotography according to claim 1, wherein the substance that controls conductivity is an atom belonging to Group 3 of the periodic table. 10. The light-receiving member for electrophotography according to claim 1, wherein the substance that controls conductivity is an atom belonging to Group 1 of the periodic table.