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JPS60193353A - Connection of electronic parts - Google Patents

Connection of electronic parts

Info

Publication number
JPS60193353A
JPS60193353A JP4993484A JP4993484A JPS60193353A JP S60193353 A JPS60193353 A JP S60193353A JP 4993484 A JP4993484 A JP 4993484A JP 4993484 A JP4993484 A JP 4993484A JP S60193353 A JPS60193353 A JP S60193353A
Authority
JP
Japan
Prior art keywords
thickness
circuits
average particle
connection
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4993484A
Other languages
Japanese (ja)
Inventor
Isao Tsukagoshi
功 塚越
Tadamitsu Nakayama
中山 忠光
Yutaka Yamaguchi
豊 山口
Keiji Hazama
硲 圭司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP4993484A priority Critical patent/JPS60193353A/en
Publication of JPS60193353A publication Critical patent/JPS60193353A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811Extrinsic, i.e. with electrical conductive fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable to obtain superior workability and reliability with regard to connection of electronic parts by a simply connecting operation by a method wherein an anisotropically conductively adhesive film containing a proper quantity of metal particles having the average particle diameter of the specified range is used for a thin insulating adhesive. CONSTITUTION:The surfaces of the electrodes 2 of an IC chip 1 and lead terminals 4 on a substrate are connected interposing an anisotropically conductively adhesive film 3 between the surfaces of the electrodes 2 and the terminals 4. At the connecting method thereof, an anisotropically conductively adhesive film containing 0.1-10vol% of metal particles having the average particle diameter of 0.01-10mum in an insulating adhesive of thickness of 50mum or less is used for the film 3. When the average particle diameter of the metal particle is 0.01mum or less, an insulating property in the facial direction can not be obtained, while when it is 10mum or more, probability that the particles exist between adjoining circuits becomes large when the circuits are microminiaturized. Moreover, when content of the conductive particles is 0.1vol% or less, conductivity in the thickness direction is hard to be obtained at connection of the fine circuits, while when it is 10vol% or more, an insulating property between the adjoining circuits can not be obtained.

Description

【発明の詳細な説明】 〔発明の輌する孜雨分町〕 不発明は午尋捧果槙回路等の電子飾品と基板回路糸との
接続刃にV−圓する◎ 〔発明の技術的背景とその間賭点〕 電子部品の小型、薄型化に伴い、^奮製回路に適応する
候枕材榊が資屋さnている。
[Detailed description of the invention] [Keibu town where inventions are made] The non-invention is a V-circle in the connection blade between electronic accessories such as a circuit board and circuit board threads. [Technical background of the invention] As electronic components become smaller and thinner, Sakaki materials, which can be used to create circuits, are being developed by stock dealers.

こILら電子部品として0.牛尋俸巣槓回路。This IL etc. is 0.0 as electronic parts. Ushijinpay nesting circuit.

谷橿表示本子類、スイッチ傾咎が69、また口路禾とに
は、プリント配紛似胡や擾良回路胡寺かちり、尚密役実
装化か進んでいる。
Taniguchi's main display type, switch tilt is 69, and Kuchiji's is progressing with the implementation of printed distribution imitations, 柾显设计窶田かちり, and secret role.

以下、Rkも^密度の進んでいる例として牛尋体Mka
t!IIu回路(以下ICと略丁)の場会について説明
する。
Below, Rk is also ^ As an example of advanced density, Mka
T! The setting of the IIu circuit (hereinafter abbreviated as IC) will be explained.

従来よりICと&似回路糸との候絖や、バイア” リッ
ド集積IgIII6へのM#S勤索子、受動系予告の゛
外付素子胡との接続方法に、ワイヤボンデイングと7エ
イスホンデイングに大別さnゐ力泳で行なわnている〇 ワイヤボンディングに、電子部品の竜惟と回路とt1本
づつA u r A Zなとの釡病細蛛にLv従接続る
方法であ/bが、祠蔵の1本が切nてし1つと部品の機
能か失わnる罠り、依絖の悟租性向上およびMJ@度夾
鉄に対処するために2エイスボンデイングへの関心か重
重っている07工イスボンデイングa″電子地品g)衣
Nにあるm極と回踊禾とt貝懐援絖するたのに、ワイヤ
ボンディングに比べて媛絖イ圓均か牛がとなりしたも電
憔の畝によらず、11gIの操作でボンディングか梃子
すること〃為ら注目さrしている〇この2エイスポンテ
イングにおける接続力法としてal例えは1つの篭他に
対し11−のCu潔を配しハンダ融層するバンプ法や、
1つの電惨に対し1個の突起Ig回路基板餉につけて超
廿波炭統するベテスタル伝か知らnているか、ハンダ#
&増の為1/CI Cか200℃以上の#I繊状恐とな
り恐影瞥tおよはし、めるいa又駿就形書を−よはし、
あるいa又燐絖飾に対応する部分に接会燥作を処してい
ることから、血での沫絖ね行なえるものの丞不的にa点
依枕でめるため電気的および憬械的の娘絖侶租注が不足
してい九〇 ’E7(尋電性接虐酌による接続の試みもなさnている
が電子部品とくに牛4坏案子須の尚vPi緻化に伴い値
癲なI!2回路部のみに導亀性機層剤を栴Xしてフェ1
スホンディングすること0国−となってさた。
Conventionally, we have used wire bonding and 7-eighth wire bonding for connections between IC and & similar circuit threads, M#S connection to via lid integrated IgIII6, and connection methods for passive system external elements. It is roughly divided into three types: wire bonding, which is performed by force, and is a method of connecting the electronic parts and circuits one by one to Lv-dependent connections such as A U R A Z. However, due to the trap of one of the shrines being cut and losing the function of the parts, Yori is interested in 2-eighth bonding in order to improve his wisdom and deal with MJ@Dogitetsu. 07 Engineering Iss Bonding A''Electronic Materials G) Although I tried to connect the M pole with the circular wire and the T shell in the cloth N, compared to the wire bonding, the wire bonding was better than the wire bonding. It is also attracting attention because bonding or leveraging is done by the operation of 11gI without relying on electric ridges. As a connecting force method in this two-way supporting, the analogy is that of 11- for one cage and the other. Bump method of placing Cu layer and melting solder layer,
Do you know if you know the best tale of ultra-high wave carbonization by attaching one protrusion to the Ig circuit board wire for one electric shock?
& increase 1/CI C or #I filamentous temperature of 200℃ or more, and it becomes a fibrous image.
In addition, since the parts corresponding to the phosphorus decorations are subjected to a sprinkling process, it is possible to perform the sprinkling with blood, but it is not possible to do so with electricity and mechanical pressure. There is a lack of daughter-in-law tax in 1990'E7 (there has been no attempt to connect with the electric carpenter), but electronic parts, especially those of the 4-year-old man, have decreased in value due to the elaboration of the VPi. !Apply a tortoise-conducting layer agent only to the 2nd circuit section and apply it.
There are now 0 countries in which to listen.

上記対策として、七ブラ栴地を代衣と丁ゐ兵力4篭性ゴ
ムの弾性および厚み力回の尋゛亀注τ利用して(IP付
は心ことで尋造r得る力泳(狩開昭55−55260号
、椅開−56−55971号)もあるか(ψ付ける為の
lj!lIボ十攻を別屈必賛とすること〃為ら、4#電
性にバラツキを生じ、1d鵬性か低かったO 1窺入力尋竜注の蝦盾剤を用いて接続する賦み(vLt
Nb851−101469i、 %tmm51−115
773号)もなさIしているが、異刀尋゛−性を示す恢
腐剤の均一厚みt侍るのか總しく尋a注にバラツキを庄
じること、接有創申の姶剤揮敢による塊境汚宋を生じる
こと、汝層創の級化に尚自を必資とする罠め、lCに対
し悠裟曽t4えること、尋篭付与材の平均靭住が比教的
大きく依漕鳩の厚みとは輩寺しいj#会においてrr、
 1wI梢細化の進むICQ)依杭に幻して分牌龍が不
足し、また粒子の路用による腸賞吟の臆影響tりけるこ
と、などの入点を市してふV。
As a countermeasure for the above, we made use of the elasticity and thickness of the seven-brass fabric and the elasticity of the rubber. 55-55260, Ikai-56-55971) (Because lj!lI Bo 10 attack is required to attach ψ, it causes variation in 4# electric property, and 1d Peng The ability to connect using the shielding agent of the O 1 look input
Nb851-101469i, %tmm51-115
No. 773) Although it is true that there is no uniform thickness of the preservative that shows different properties, it is a great effort to increase the variation in the thickness of the preservative. The desecration of the land caused by the Sung Dynasty, the trap that made you have to invest in the classification of layers, the fact that Yuso T4 was given to IC, and the average tenacity of the materials given to the earth depended heavily on the religion. The thickness of the rowing pigeon is the same as the thickness of the rowing pigeon.
1wI ICQ with progressing thinning) We will be looking at entry points such as the lack of Bunpai Ryu due to Ikui, and the lack of influence of Choshogin due to the use of particles.

こnらr満足する厳枕材料が5*(待遠3fしていたO 〔@明の1的〕 不@明aJ:配入点に―÷なざnπもので、そ ゝの目
的とするところQコ闇便な依就操作により作業性および
IZj枳性に丁ぐlまた依絖力詠を提供ぜんとするも七
でめる0 〔発明の柄織〕 すなわちA%明f)饋dC衣囲に嵌続用篭憔tσけ7C
電子部品とき板回局との電気的波絖刀汰において5Mみ
か50μm以下の杷槻注候准剤VC−v−均枝住がuo
i〜10μmの金鵜性紋子to、1〜10捧植%1南゛
する異刀嬶−注依盾フイルムを用いるCと7を瞥偵とす
る′亀す都市の嵌枕力法VCある。
The material that satisfies these n r is 5 * (waiting 3f O [@Ming's 1st]) Not @ Ming aJ: At the distribution point - ÷ nπ, and that is the purpose. However, I am trying to improve workability and IZJ performance through a shady operation, but it is only 7 times 0. A basket for fitting into the clothing area tσke 7C
In electrical wave cutting with electronic parts and board circuits, 5M or less of 50 μm of loquat additive VC-v-Tokiedasumi is uo
There is a VC of the ``Kamesu City'' with C and 7 as sight lines, using a metal pattern of 1 to 10 μm and a 1 to 10% implanted 1 to 10% 1 south plate film.

本発明における依就材料としての典力尋嵐性フィルムV
Cついて以下説明する。
Noriyuki Arashi Film V as a dependent material in the present invention
C will be explained below.

異刀瑯′屯性とrj、フィルムのhl、み方向に導電性
を示し囲方向に6P3縁性を示すものrいう。
A film exhibiting conductivity in the direction of HL and 6P3 in the circumferential direction is referred to as rj.

この時の導電性および絶縁性の尺綻としてa。The measure of conductivity and insulation at this time is a.

厚み力1司に1010−cm以下、肉刀回に1060−
cm昼土り也恍半であることが好ましい0厚み力回りs
ia性a按絖都1山に尋進を侍る為rC必資でありSI
&I刀同の絶縁性r[、k炭回路と一気的に週−【する
為に必資である〇 この兵力尋電性を侍ゐ為の接層フィルムの偵w−0杷−
性接盾却」中VChlA分所HLk得る為に比教的小ざ
な専一付与材【151芝麓hMして、2イルムの厚ケ刀
同に尋嶌性程子を黄染さゼゐことにより侍らnる0 4発#13(L)為の尋−付与材C平均程注(LOI〜
10μmの蛍絹程子か用いら)Lる0平均粒住α01μ
m以−トでC1靭子り衣囲狽か入さく程子闇の懐胎か必
資以上VC主じ心こと〃為ら囲刀回り絶縁性か狗らnな
い0 また平均族性10μm以上で61回昂が倣細り揚台に一
鯖1gl路間に粒子か仔仕丁ゐ帷率か尚(な91や*、
0面方向の、13鍬性か侍らnない。
Thickness: 1010-cm or less for power, 1060-cm for meat sword
cm 0 thickness power rotation s which is preferably 0 thickness
In order to attend Jinjin in the capital of 1 mountain, rC is necessary and SI
&I The same insulation r [, k coal circuit and all at once - [In order to do this, it is necessary to investigate the adhesive film to serve this military power supply.
In order to obtain VChlA branch office HLk during sexual encounters, I made a small amount of the teaching material [151 Shibamoto hM], and by yellowing the 2-ilm Atsugatoko and Shimishika Yoko. Samurai nru 0 4 shots #13 (L) for thick-applied material C average note (LOI ~
10 μm firefly grain size α01μ
If it is more than m, the insulation around the surrounding sword is not 0, and the average thickness is 61. Is there a particle rate in the course of 1 g of one mackerel on the thin lifting platform?
In the direction of the 0 plane, there is no 13 kuji character or samurai n.

本発明でいう平均粒径L)に次式でめるものとする。The average particle size L) in the present invention is expressed by the following formula.

D=Σnd/Σn ここにnrffdなる靭性の粒子の畝tボ丁0こnら粒
径のIIM察刀法方法てに、−数的に用いらrLる電子
嗣倣睨や元♀糾釦1コールタ刀ワンタ−1光M札法など
が採用口」Uピである。
D=Σnd/Σn Here, nrffd is the ridge of the tough particle. Coulter sword Wanta - 1 light M bill method etc. are the employment openings.

構亀付与材か金橋粒子である理由ね、接続回路部の熱放
散t+、の艮いことにょる0法枕鄭における熱放敢注か
剋いと、法枕都か回路を凱nる電流によりジュール熱で
発熱し、他痛な場廿に0接幌都か剥蘭する0こnら金J
!g粒子すガとして10 、Fe、 Ni、 Cr、 
L:o* Al、 sb、 fvlo、 (:u、 A
gtPt、ルU 寺力為め9.こnらの重体あるい0廿
蛍や酸化物などでもよく、cnらり2佃以上を被合り一
て用い心こともoJ龍であ/8゜箇た金#1枚子の中に
a、ガラスや台賊仙廁り表111Iに削bC釜橋膚紫設
は罠物でも廟用叫−とである。
The reason why it is a structure imparting material or Kanahashi particles is due to the heat dissipation of the connecting circuit part. I have a fever due to Joule fever, and when I'm in pain, I feel like I'm going to touch the ground or peel off.
! 10 as g particles, Fe, Ni, Cr,
L:o* Al, sb, fvlo, (:u, A
gtPt, le U Teraiki Tamame9. These heavy bodies, fireflies, oxides, etc. may be used, and it is also important to use oJ dragons with 2 or more pieces of gold mixed together. a, glass and the tai-chisen-mai table 111I are cut bC Kama-bashi-deraji-set is a trap, but it is also a cry for the temple.

こ11.ら棉゛…、性粒子の官巾社rJα1〜1o捧槙
%が艮Rfな典力尋繊性r示す〇 0.1体積%以下で6.倣#I Ic!j勤り澱軟にお
いて厚み方向り尋篭性か侍らILに(<、111捧槓%
以上で6瞬接回貼tiJの絶縁性か侍らnなくなる。
This 11. 6. If the official paper rJα1~1o contribution of the sexual particles is less than 0.1% by volume, it will be less than 0.1% by volume. Imitation #I Ic! In the thickness direction, the samurai IL in the thickness direction (<, 111%)
With the above, the insulation properties of the 6-moment contact circuit adhesive are no longer satisfactory.

こりような理由から侶租性C/−)縄い異カ尋竜性を侍
4A(/Jち七短けLl、 5〜5体枳%〃島込らに灯
ましい。
For some reason, I am a samurai 4A (/J, 7 short Ll, 5-5%), and Shimagome et al.

次に杷線性接眉酌ycついて祝明丁ゐが、基本的にrr
J111市の按看シート釧tc用いらnている配合が通
用oJ叶であり1カ・’!E L(*抵抗率が1o7Ω
−cn+以上の物が1用できる□雇んの渋盾シート類に
用いらrt;bgc台ね、萩渠カt1コ与丁ゐポリマー
と、′tの池必汝に応じて用い/)枯肩付与卸」、枯瘤
性調蛍酌、朱檎創、老化功止創1分敢剤等からなってい
る。
Next, Yumei Choi with the loquat eyelid, basically rr
The formulation used in J111 city's training sheet TC is the common OJ leaf and 1 Ka'! E L (*Resistivity is 1o7Ω
-cn+ or higher can be used for 1 time □Used for hired shield sheets rt; bgc base, Hagimotoka t1 coyodii polymer, and 't's pond must be used according to you/) withered The products include ``Shoulder Grant Wholesale'', a kerosene toning fluorescing drink, a red curd, and an anti-aging stimulant.

こnらポリマー梱としてC,エナレンul−taビニル
共重合体、エチレン−酢敵ビニル共里台捧食性物、ポリ
エチレン、エチレン−プロピレン共貞台14.エチレン
ーアクリル1蚊共ル台捧、エチレン−アクリルぽエステ
ル共JM &体、エテンンーアクリル叡塩共京せ捧、ア
クリル叡エステル糸ゴム、ポリインブナレン、アタクチ
ックポリプロピレン、ポリビニルブナフール、アクリロ
ニトリルーン°タシェン共雇台坏、スチレン−フタジエ
ンYロックへM@杯、スチレン−イソプレンブロック共
貞台停、ポリブタジェン、エチレンセルロース、ポリエ
ステル、ポリアミド、ポリウレタン、天然ゴム、シリコ
ン糸ゴム、ポリクロログレン、ポリビニルエーテルなど
が虐用可藷ヒであり早a!+1あるい02 at以上か
併用さrLる0 枯盾付与網としてrJ、ジシクロペンタジェン側IJH
b ロジン、褒憔ロジン、テルペン倒B凱キシVン側B
rtsテルペン−フェノール’In4B’el、フルキ
ルフェノール情廂、クマロン−インテン側廟等かあり、
こrLらt処女1c応じて、率鯉あるいej2個以上i
7F用して用いる。
These polymer packages include C, enalene ul-ta vinyl copolymer, ethylene-acetic acid vinyl copolymer, polyethylene, ethylene-propylene copolymer 14. Ethylene-acrylic resin, ethylene-acrylic polyester resin, ethene-acrylic salt resin, acrylic ester thread rubber, polyinbunalene, atactic polypropylene, polyvinyl bunafur, acrylonitrile Tashen joint employment base, styrene-phthalene Y-lock M@cup, styrene-isoprene block joint base, polybutadiene, ethylene cellulose, polyester, polyamide, polyurethane, natural rubber, silicone thread rubber, polychlorogrene, polyvinyl Ether etc. can be abused and it is easy! +1 or 02 at or above or used in combination rLru0 rJ as a dead shield imparting net, IJH on the dicyclopentadiene side
b Rosin, reward rosin, terpene side B
There are rts terpene-phenol 'In4B'el, furkylphenol shrine, coumaron-inten side mausoleum, etc.
Depending on the virgin 1c, rate carp or ej 2 or more i
Used for 7F.

枯71iit性調振沖Jとしてねたとえはジオクテルフ
クレー)koじめとする谷恒口」朦剤蘭等が代機的であ
る〇 乗檎剤σポリマーのM:Mk力を簡めることか必資な揚
曾に用いる。ポリマの′ば能基と反応するψ官能性物置
であり、7′cとえはポリイソシアネート、メラミン倒
鹿、尿木倒号旨、22ノール倒鹿等かあけらnる0老化
助止触虜ポリマーバインダの勢、1船元等に対する女足
性を烏めることか必資な揚台に用いるもので、たとえは
金属石クン#4?!″代表とする簀だ創や、アールキル
ンエノール蘭なζc/)取化助止剤、ベンゾフェノン糸
、ベンゾトリアゾール禾などの架外腺吸収剤等かあり、
やr[り処女に応じてjll&独あるいに2伽以上か併
用さnる〇 分散剤C,ニッケル粒子の分散性同上のだめ′に用いる
1台がろる◎この例として1Jたとえは界1M+活性剤
かめクノニオン糸、カチオン禾、アニオン禾1両性のう
ら1−あるいに2檎以上か併用口■能である〇 以上の栴奴材料を用いた典刀尋亀性フィルムのJR造力
法としてus 7Cとえはポリマーおよびその他の処女
に応じて使用する融加割からなる快7tr剤組成物2m
剤に鹸屏し敵状とした懐に。
As an analogy for the dry 71iit characteristic vibration offshore J, the analogy is dioctele fuklay) ko dank valley Tsuneguchi, etc. is a substitute. It is used for the necessary raising. It is a ψ-functional compound that reacts with the functional groups of polymers, and 7'c is a polyisocyanate, melamine, ureki, 22-nor, etc. It is used as a lifting platform, which is necessary to shame the power of polymer binder, 1 ship owner, etc., for example, metal stone #4? ! ``Representative examples include bamboo shoots, carbonation aids, benzophenone threads, benzotriazole, and other extra glandular absorbents.
Depending on the virginity, use Jll & Germany or 2 or more or in combination n〇 Dispersant C, dispersibility of nickel particles One unit used for the same as above is ◎ For this example, 1J, for example, Kai 1M + JR production method of tentojinkame film using activator Kamekunonion thread, cationic hemo, anionic hemoglobin, 1- or 2 or more amphoteric or more than 〇 or more active material. As US 7C, it is a pleasant 7TR agent composition consisting of polymers and other additives used according to the virginity.
He was treated as an enemy by the enemy.

4−付与材を雄當の撹拌等により跣付し、セパレータ等
の詰村上にm布し、乾床吋の浴沖」(車数による厚み力
回り捧慎収紬により尋′颯材を序壱方向に配列、@楽化
する力1hsあるいa艮(知らnている方法として、尋
′亀8:接盾卸j組成吻を修楠下で成形して、磁性を臂
する導電付与材を厚み方向に配列するなどの方法により
導電付与材か異方配タリした接層シートrつることがで
きる。基本的にaフィルムの厚み方間に粒子か曽果構造
ケとt″Lに良いので、製造方法0問わない0接盾シー
トの厚みa、導電付与材粒子の平均板径の2惜以上であ
り、刀・つ50μm以下でめるCとが必要である0厚み
か平均板径の2惜以下であると、専竜材か依盾剤で十分
に4ft、fjtδnないことから、釡編粒子の万化を
生じやすい。
4- Apply the material by vigorous stirring, spread it on top of the separator, etc., and lay it on the dry bed. Arranged in the 1 direction, @reducing force 1 hs or a 艺 (As a known method, the conductive material that gives magnetic properties is formed by molding the composition proboscis under the molding method) By arranging the conductive material in the thickness direction, it is possible to create a contact sheet with anisotropically arranged conductivity imparting material.Basically, it is possible to create a contact sheet r with conductivity imparting material or anisotropically arranged particles in the thickness direction of the film. Therefore, the manufacturing method does not matter, and the thickness of the shielding sheet, a, must be at least two times larger than the average plate diameter of the conductivity-imparting material particles, and C, which is less than 50 μm, is required. If it is less than 2 degrees, 4ft, fjtδn will not be enough for Senryuzai or Ishiyuki, and it will be easy to cause the knitting particles to change.

全体のフィルム厚が50μm以上でに1電気抵抗のレベ
ルか用人し、lた笑装時における接続部の厚みか人きく
なる0 侍らnた接層ソート面に、必要に応じて欝]爵住シート
で扱うと、塵埃等の付盾防上土好lしい。
If the overall film thickness is 50 μm or more, the electrical resistance level will be reduced to 1, and the thickness of the connection part will be affected when wearing. If you handle it with a sheet, it will be better to protect it from dust etc.

次に上記により侍らn罠兵力#電性按腐フィルムを用い
7C候杭力法について以下続開する〇接続は・電子部品
の表聞に形成した亀他面と基板回路糸のti」に目IJ
比共力導′岨性候盾フィルムで介在させて刀p熱あるい
a加圧あゐいa刃口黙加圧することにより行なうことが
でさる。
Next, according to the above, we will continue to explain the 7C pile force method using the samurai n trap force # electrically compressed film. 〇 Connections are made on the surface of the electronic component and the board circuit thread.
This can be done by interposing a specific force-conducting film and applying heat, pressure, or silent pressure to the edge of the blade.

すなわち接層ンイルム囲にml 11714性ソート胡
り存在する場合にあってa、−力の俵*向(たとえば回
路創り)に依盾俊剥廟性ンー)2桐廟して他の徽冶面(
1ことえは電極性)と回路か一致するよう位置せわせt
竹い、汝盾丁nはよい。
In other words, if there is a ml 11714 sorting in the tangential layer, then there is a - power bale * direction (for example, circuit creation), yidun shun stripping, 2 tung temple, and other walls. (
1) Position it so that it matches the polarity) and the circuit.
Bamboo, you are good.

第1図a代表的なICのンエイスダワンホンディングを
示す俣式凶であり% ■Cテッグ1り電体0IIJ2と
基数上のリード端子6の間に、兵力4遍性徽眉フィルム
4tブr在δぜているlう1γボしている。
Figure 1a is a mata-style kyo showing a typical IC's N-Ace Dawang bonding. Between the CTEG 1 electrical conductor 0IIJ2 and the lead terminal 6 on the radix, there is a 4T block r has δ and l has 1γ.

按層力&としての〃0熱手段としてu、ml盤。〃0 heat means as a layering force &, ml board.

ホットジェットドライヤー寺かpJ症でめゐ〇刀0出+
段としてaプレス、ロール等力1あり刃口熱お↓ひ刃口
出手段を組み台わぜゐことにより候看時間の短軸化が口
」北となること〃・ら、さらに好筐しい。
My hot jet dryer has PJ syndrome and I have 0+
As a stage, there is a press, roll force is 1, and the blade mouth heat ↓ By assembling the blade exit means, the axis of viewing time can be shortened, and it is even better. .

得らnyc接続部の接盾ノーおよび、俵虐開と依盾鳩界
面の強化の為にσ1接盾剤を架橋することが好ましい〇 すなわち熱、元、放射紛寺の外部工不ルキーでラジカル
反応、や付加反応により反応する取分τ汝盾卸j甲に宮
廟し、該工不ルキーによりポリマーの6仄凡侮迫化tC
刀為る方法である0 ′こnら架倫方法としてね、ラジ
カル反応にあってはビニル化合物中に通販化物、アゾ化
せ吻、欧化還元糸化合吻、′J4i嶺金栖化曾製などの
増感78rljを併用しyc!L 11刀0反応希にあ
ってに、アミン類やイソシアネート、メラミン#尋捧な
どt併用すr′Lはよい。
It is preferable to cross-link the σ1 shielding agent in order to strengthen the interface between the nyc connection and the interface between the nyc and the nyc connections. Reactions and addition reactions react to the proportions of the polymers.
0 'This is a method of making a sword.In terms of radical reactions, vinyl compounds are added with mail-order compounds, azo-ized compounds, European reduced thread compound compounds, 'J4i Minekanasu Kaso-made, etc. yc with sense 78rlj! In rare cases of reaction, it is good to use amines, isocyanates, melamine, etc. in combination.

以上の防用はICと基板回路糸との2エイスボンデイン
グの揚台について行ってきたが、不弁明にその他回路向
と回路面の接続にも山川でろv1開での*a(フェイス
ポンディング)k行9用逆にけ丁べて通用司hヒなtの
でφり、竹に小囲槓で′電気的に防枕したt!21局候
絖の揚台に尚分解が侍らnることから物に南用である〇
〔央〃1μmタリ〕 不弁明を以下東〃山秒IJKよりさらに1細に脱明する
0尋電付与材の宮M重に、汝眉フィルム甲に占める棒積
%で次示しπ0 実施例−1〜6 分子鼠ボv20.l]0+:l、+黙cNf塑性ポリエ
ステル葡メチルエテルケトンに俗解し回ル分65%の浴
数’l” * 7C。
The above-mentioned protection has been performed for the lifting platform of 2-eighth bonding between the IC and the board circuit thread, but inexplicably, Yamakawa Dero v1 open *a (face bonding) was also applied to the connection between the circuit direction and the circuit surface. For K row 9, I put it in the opposite direction and used it for general purposes, so I made it electrically shielded with a small fence on bamboo! Since the decomposition is still present on the lifting platform of the 21st station, it is suitable for the south. In the Miya M weight of the material, the bar area percentage occupying the eyebrow film instep is shown below as π0. l] 0+: l, + silent cNf plastic polyester methyl ether ketone, the number of baths with a circulation rate of 65% 'l'' * 7C.

この浴欣申に平均3位性0.06μmのアルdニウム超
倣# = H+足重混台し超廿波で分散しπ0この配曾
欣t、乾床恢の産亜厚か5〜10μmとなるようにバー
コータにより頭布し% 120”C−5分乾燥しその時
の序牟力回の収給を利用して異方尋゛咀性汝層フィルム
を付たQこの接層フィルムの分解能tみゐ為に、銅伯の
u細巾50μm、ビツナ100μmのカラスエポキシ基
材の2枚のプリント回路板τ回路τ−玖させ1150℃
−5kg/af−10秒間のプレスによV貼付わせて絆
1i17+したところ、第1次に示すように媛枕都を言
む対同回路1ijでIJ、 4 U以−ト、同体に#、
絖、都を言ひ瞬候回珀間で1011Ωとnみ力量に尋屯
注、τd)曽力1−に絶縁性の異刀専−性=□+*シて
い7ζ0なよ・プリントl!21路似にIC実装に代え
て分屏能肝愉の為に採用し罠。
In this bath, an average 3-dimensionality of 0.06 μm of Aldium superimitation # = H + foot weight is mixed and dispersed by ultra-high waves, π0 This distribution is 5 to 10 μm It was coated with a bar coater and dried for 5 minutes at 120"C, and then an anisotropically chewable layer film was attached using the residual pressure at that time. For this purpose, two printed circuit boards made of Karasu epoxy base material of Dohaku U width 50 μm and Vituna 100 μm were heated at 1150°C.
-5kg/af- When bond 1i17+ was attached by pressing V for 10 seconds, as shown in the first diagram, IJ in the same circuit 1ij that says Himamakura Miyako, 4 U onwards, # in the same body,
When I said the capital, I looked into the power of 1011 Ω between the flashes, τd) Isolated power = □ + * Shitei 7 ζ 0, print l! Similar to Route 21, it is a trap that is adopted for the purpose of dividing the screen instead of implementing IC.

実施例−4 水酸l&1%τ市丁心アクリル敏エステル糸枯ンN六〇
(ガラス獣少点−40”C,、固形分25%り自゛ド赦
エテル16欣)100虚瀘姉と、インシア年−ト糸の朱
倫沖」2厘]を都よりなる杷轍注依腐納給献申に平均粒
径0.8μmの嫁紛を混合しボール< ルで241tf
闇混合1分散した0この〃敢欣r犬泥例1〜6と同僚に
セパレータ上に堡布、乾祿し、フィルム60μmり當御
粘瘤性の異刀導電性接腐フィルム【侍7C。
Example-4 Hydroxylic acid l & 1% τ Shidingshin acrylic ester thread drying N60 (glass beast small point -40"C, solid content 25% free dry ether 16") 100 hollow 241 tf in a ball of 241 tf was mixed with a dowry powder with an average particle size of 0.8 μm.
Dark Mixture 1 Dispersed 0 This 〃欣r dog mud Examples 1 to 6 and co-workers were put on a separator with a barrier cloth, dried, and the film was 60 μm thick.

こQ)依盾フィルムも、夾厖倒1〜6と:り様な評lf
f1lケ行なったか第1表に示すよりに異方廊颯f+、
τ市してい1ζ0 また小夾施しリにおいてa、接層ノ曽が積層性を羽゛す
るために回踊り位は会せt量率に竹うCとかuJ症でa
りv、汝軟吋の刀ロ熱力0出により嵌盾坤j中のインシ
アネートと水顯基との反応が促進ざn、gwで粘盾性τ
もつにもη・〃)わらず1強固に接層することかciJ
龍でめったυ 東M41r05〜7 スチレンープタシエンのブロック共厘台体(メルトイン
デックス2.6)100fi瓜郁と。
Q) Is there a similar review of the Yoridan films as 1 to 6?
Did you do f1l? As shown in Table 1, the anisotropic path f+,
τ city and 1ζ0 In addition, in the case of small concentration a, the rotation position should be matched to increase the laminated property of the contact layer, and in the case of C and UJ syndrome,
ri v, the zero output of thermal power from your soft sword accelerates the reaction between the incyanate and the water base in the shield j, and the viscous shielding property τ at gw.
Motsumo η・〃) Regardless of whether it is 1 or ciJ
Dragon met υ East M41r05~7 Styrene-butacien block joint body (melt index 2.6) 100fi Uryu.

軟化点120℃の芳4r鉄系積層付与薊50血皿都およ
びトルエン200m鼠鄭エクなゐ接層卸」浴数【作製し
九〇 こg)浴数VC平均程住10μmcL)ニッケル初り宮
重を震えてボールミルで5符間分敢混台し専延性依眉剤
俗欲tえ7ζ0 この浴iI&を笑j山例1〜3と同体に室布乾均ζし厚
み20μmと50μmの接層フィルムtえた0こ(/J
接涜フィルムも実施例1〜6と同4求なH’r 1曲を
竹なったが第1表にボ丁ように兵力尋゛−江t/1゛シ
ていたコ 比軟?1J−1 実施?IJ5〜7り法肩卸」浴数り甲に平均粒径60μ
mのニッケルltj ’t: 7M、@ シs央胤ヤリ
5〜7と同様に分′#!L混会し尋亀住倣盾却」r侍た
0こり汝膚剤浴欲を火力占νす1〜6と同体に塗布転線
しニッケルせ有諷10捧偵%、厚み50μmの法肩フィ
ルムを侍7ζ0 このも(t)を実力山側1〜6と同様な評価を行つ罠と
ころ第1我に示すように旧ノー力回の絶縁性か焦くな、
0.異方瑯゛岨注か無くなつ罠O比軟・内−2および6 実施例5〜7と同様にして2411L1寸与剤の宮臂厘
および厚φτ叢えて嶺盾フィルムを侍7ζO丁なわら比
Viシリ−2で0ニッケル粉15体J6IL%として)
!v−今50μm Q)法肩シートt、比軟シリ−6で
rJニッケル粉10捧禎%として厚か70μmのプ安盾
シートτ伶7こ0 央應汐り1〜6と凹抹な評1曲【竹ったところ第1表に
示すように比較例−2においては、比較例−1と1cI
J妹に兵力導電性か無くなった。
Softening point: 120°C, iron-based lamination: 50 blood plates, toluene: 200 m, toluene: 90 kg bath number: VC average: 10 μm cL) nickel-based Miyashige I then mixed it in a ball mill for 5 notes, and then mixed it into 7 ζ 0 parts with a ball mill.I dried this bath in the same body as Examples 1 to 3, and made a layer of 20 μm and 50 μm thick. Film teta0ko (/J
The profanity film also featured the same H'r song as in Examples 1 to 6, but as shown in Table 1, it was a comparison with a military force interview. 1J-1 implementation? IJ5-7 method shoulder drop” average particle size 60μ in the bath number instep
m's nickel ltj't: 7M, @ Shisaotane Yari 5-7 as well as min'#! 1 to 6 are mixed with nickel, 10% nickel, 50 μm thick film. Samurai 7 ζ 0 This is also a trap to evaluate (t) in the same way as the ability side 1 to 6. However, as shown in the first page, don't worry about the insulation of the old no-power times.
0. In the same manner as in Examples 5 to 7, the thickness of the 2411L1 stimulant and the thickness φτ were piled up, and the Reinshi film was mixed with the Samurai 7ζ O-cho straw. (as 0 nickel powder 15 bodies J6IL% in Vi series 2)
! v - now 50 μm Q) Flat shoulder sheet t, soft silicone 6, rJ nickel powder 10%, thickness 70 μm puan shield sheet τ伶7ko0 Ooshio 1 to 6 and a poor review As shown in Table 1, in Comparative Example-2, Comparative Example-1 and 1cI
J My sister's military conductivity has disappeared.

比較例−6においてに、貝/1lfa恍のレベルか尚か
つ7CO’!:たX表時にふ・ける候杭部の厚みか人さ
くなることと81ノせて、実用性のないこと力iイyか
り7C。
In Comparative Example 6, the level of shellfish/1lfa was 7CO'! 7C is impractical due to the thickness of the pile that becomes too thick when the table is exposed.

第1表 〔@明の効果〕 以上1ト述し7cように1本発明になる接枕方法羽によ
nは、前便な接続操作により倣廁な多数本の回路7−1
堤に接続すゐCとが口Iロヒとなり。
Table 1 [Effect of @Ming] As mentioned above, as shown in Figure 7c, the connecting method according to the present invention can be applied to a large number of circuits 7-1 that can be imitated by a preliminary connection operation.
Sui C connected to the embankment became Kuchi I Rohi.

また別途向建手段を必要としないので信頼性および作菓
性に丁ぐnる〇 接続材料がり一ノ学かのフィルム状であること、vlら
、接続作業にlrIるj某視汚染かな(、lた比戦的低
−で接続U」症であゐことたら依絖故り品瀞′kN向の
鹸化も必要としないので、′電子部品に刈丁/8忍F/
wかないといった肴rした幼米を委するtのであり、尚
軸重化の逢むIc依幌用途にされVて上用な接続刃′t
ii’;を提供するものである◎
In addition, since there is no need for a separate installation method, reliability and confectionery performance are greatly improved. , If you have a relatively low connection and you don't need saponification for the product, you can use it for electronic parts.
It is used to entrust young rice that has not been eaten, and it is also used as a connecting blade for use in applications where the shaft is loaded.

【図面の簡単な説明】[Brief explanation of the drawing]

第1凶WJ4−元側り美り狗である接続方法を示す俣式
図である。 41号の85?、明 I IGテップ 2 ゛#L惟 6 共力導亀性汝有フィルム 4 リード端子第1図
It is a Matata style diagram showing a connection method which is the first bad WJ4-moto side Rimiri dog. No. 41, 85? , Mei I IG tep 2 ゛#L 惟6 Synergistic conductive turtle film 4 Lead terminal Figure 1

Claims (1)

【特許請求の範囲】 l、表面に依絖用M他を設けた電子部品と基板回路との
一気的鍛絖刀伍において、厚みが50μm以下の絶縁性
捩盾剤に平均粒径かα01〜10μmの蛍llI4性粒
子ta1〜10捧慎%甘有する典力導篭性按層フィルム
【用いることt物幀とする電子飾品の捩貌力法O
[Scope of Claims] l. In the simultaneous forging of electronic components and board circuits with a threading M etc. provided on the surface, an insulating screw shielding agent with a thickness of 50 μm or less has an average particle size of α01~ 10 μm firefly llI4 particle ta1~10% depleted power-conducting layered film
JP4993484A 1984-03-15 1984-03-15 Connection of electronic parts Pending JPS60193353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4993484A JPS60193353A (en) 1984-03-15 1984-03-15 Connection of electronic parts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4993484A JPS60193353A (en) 1984-03-15 1984-03-15 Connection of electronic parts

Publications (1)

Publication Number Publication Date
JPS60193353A true JPS60193353A (en) 1985-10-01

Family

ID=12844844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4993484A Pending JPS60193353A (en) 1984-03-15 1984-03-15 Connection of electronic parts

Country Status (1)

Country Link
JP (1) JPS60193353A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61186061A (en) * 1985-02-13 1986-08-19 Fuji Xerox Co Ltd Device for driving contact type image sensor or thermal head or the like
JPS62254455A (en) * 1986-04-28 1987-11-06 Osaka Soda Co Ltd Pinless package and mounting method thereof
JPH0311694A (en) * 1989-06-08 1991-01-18 Sumitomo Bakelite Co Ltd Connection of semiconductor ic
US5783867A (en) * 1995-11-06 1998-07-21 Ford Motor Company Repairable flip-chip undercoating assembly and method and material for same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61186061A (en) * 1985-02-13 1986-08-19 Fuji Xerox Co Ltd Device for driving contact type image sensor or thermal head or the like
JPS62254455A (en) * 1986-04-28 1987-11-06 Osaka Soda Co Ltd Pinless package and mounting method thereof
JP2572570B2 (en) * 1986-04-28 1997-01-16 ダイソー株式会社 Pinless package mounting method
JPH0311694A (en) * 1989-06-08 1991-01-18 Sumitomo Bakelite Co Ltd Connection of semiconductor ic
US5783867A (en) * 1995-11-06 1998-07-21 Ford Motor Company Repairable flip-chip undercoating assembly and method and material for same

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